阅读说明：本技术 一种磁致伸缩薄膜及其制备方法 (Magnetostrictive film and preparation method thereof ) 是由 朱婧 门阔 连紫薇 于 2019-10-22 设计创作，主要内容包括：本发明公开了一种磁致伸缩薄膜及其制备方法,所述薄膜是沉积在单面抛光单晶硅基片上的FeGaB非晶薄膜,厚度400-800nm；所述制备方法包括：清洗单面抛光单晶硅基片；在基片上采用磁控溅射法通过共溅射沉积FeGaB薄膜。本发明制备的磁致伸缩薄膜具有软磁性能好、饱和场低、磁致伸缩系数高等优点。本发明可用于制备小型化、兆赫兹条件下磁电耦合系数高、综合性能优异的磁电复合薄膜。(The invention discloses a magnetostrictive film and a preparation method thereof, wherein the film is a FeGaB amorphous film deposited on a single-side polished monocrystalline silicon substrate, and the thickness of the film is 400-800 nm; the preparation method comprises the following steps: cleaning a single-side polished single crystal silicon substrate; and depositing the FeGaB film on the substrate by co-sputtering by adopting a magnetron sputtering method. The magnetostrictive film prepared by the method has the advantages of good soft magnetic performance, low saturation field, high magnetostrictive coefficient and the like. The invention can be used for preparing the magnetoelectric composite film with miniaturization, high magnetoelectric coupling coefficient under the megahertz condition and excellent comprehensive performance.)

1. A preparation method of a magnetostrictive film is characterized by comprising the following steps:

(1) cleaning single-side polished monocrystalline silicon, and putting the single-side polished monocrystalline silicon on a substrate table of ultrahigh vacuum magnetron sputtering equipment to prepare film coating;

(2) placing a FeGa target and a B target to be sputtered on a target seat;

(3) and carrying out silicon wafer sputtering deposition to enable the FeGa target and the B target to be co-sputtered to reach the required thickness.

2. The method according to claim 1, wherein in the step (1), the cleaning of the single-side polished single-crystal silicon is performed by ultrasonic cleaning with alcohol and acetone for 15 to 30 minutes, respectively, and then blow-drying with electric blow.

3. The method according to claim 1, wherein in the step (3), the FeGa target is sputtered by using a direct current power supply, and the B target is sputtered by using a radio frequency power supply.

4. The method of claim 1, wherein in step (3), the sputter depositing is performed in an inert atmosphere.

5. The method according to claim 1, wherein in the step (3), the FeGa target is sputtered with a DC power supply power of 60W, the B target is sputtered with a RF power supply power of 60W, the film deposition rate is 13nm per minute, and the sputtering time is 30-60 min; the working pressure is 1 Pa.

6. The magnetostrictive film prepared by the method according to any one of claims 1-5, wherein the film is a FeGaB amorphous film formed by co-sputtering a FeGa target and a B target and has a thickness of 400-800 nm.

Technical Field

The invention belongs to the technical field of material preparation, and particularly relates to a magnetostrictive film and a preparation method thereof.

Background

The magnetoelectric composite material is valued by researchers because of the advantages of high Curie temperature, high sensitivity, excellent magneto-electromechanical coupling performance, simple structure, low cost and the like. Among other things, the magnetic material layer should have characteristics of high saturation magnetostriction constant and low saturation field. At present, a high-quality metal soft magnetic film can be deposited at room temperature by a physical vapor deposition method, and the metal soft magnetic film is low in cost and easy to integrate into different integrated circuits. However, a metal magnetic thin film having a large saturation magnetostriction constant and a low saturation field is not easily obtained. In the selection of the magnetostrictive layer, Terfenol-D (TbDyFe with a Laves phase structure) has a large magnetostrictive coefficient, but the Terfenol-D-based magnetoelectric composite material is not suitable for application in a low field due to relatively low magnetic permeability and high saturation magnetic field; the amorphous FeBSiC alloy has the magnetic conductivity as high as 40000, but the magnetostriction coefficient is relatively small; compared with two materials of FeBSiC and Terfenol-D, the FeGaB material has the advantages of the FeBSiC and the Terfenol-D, and the FeGaB film has better low magnetic field response performance than the Terfenol-D film and has a larger magnetostriction coefficient than the FeBSiC film. More importantly, the matching degree of the two materials of FeGaB/AlN is higher. However, when the content of B is different, the film formation is significantly affected, and therefore, the composition of the film needs to be optimized.

Disclosure of Invention

The invention aims to provide a magnetostrictive film which has the advantages of good soft magnetic performance, low saturation field and high magnetostrictive coefficient.

The invention also aims to provide a preparation method of the magnetostrictive film, which can be used for preparing a magnetoelectric composite film with miniaturization, high magnetoelectric coupling coefficient under the megahertz condition and excellent comprehensive performance.

In order to achieve the purpose, the invention adopts the following technical scheme:

a preparation method of a magnetostrictive film comprises the following steps:

(1) cleaning single-side polished monocrystalline silicon, and putting the single-side polished monocrystalline silicon on a substrate table of ultrahigh vacuum magnetron sputtering equipment to prepare film coating;

(2) placing a FeGa target and a B target to be sputtered on a target seat;

(3) when the silicon chip is sputtered and deposited, the FeGa target is sputtered by a direct current power supply, the B target is sputtered by a radio frequency power supply, and the FeGa target and the radio frequency power supply are co-sputtered to reach the required thickness.

Further, in the step (1), the single-side polished monocrystalline silicon is respectively ultrasonically cleaned for 15-30 minutes by alcohol and acetone, and then dried by electric air blowing.

Further, in the step (3), the sputtering deposition is performed in an inert atmosphere.

Further, in the step (3), the power of the direct current power supply selected by the FeGa target is 60W, the power of the radio frequency power supply selected by the B target is 60W, the deposition rate of the film is 13nm per minute, and the sputtering time is 30-60 min. The working pressure is 1 Pa.

The magnetostrictive film prepared by the method is a FeGaB amorphous film deposited on a single-side polished monocrystalline silicon substrate, and the FeGaB film is formed by co-sputtering a FeGa target and a B target and has the thickness of 400-800 nm.

Compared with the prior art, the invention has the following beneficial effects:

the invention adopts magnetron sputtering technology, and the FeGaB film is deposited on the monocrystalline silicon substrate, so that the invention has the advantages of good soft magnetic performance, low saturation field, high magnetostriction coefficient and the like. The method has the advantages of simple operation, low cost and easy industrial realization and popularization.

Drawings

FIG. 1 is a VSM curve of a 400nm thick film prepared according to the present invention.

FIG. 2 is a VSM curve of a 800nm thick film prepared according to the present invention.

Detailed Description

The present invention is further described in detail below with reference to the drawings and examples, but the scope of the present invention is not limited thereto.