Cathode body assembly, magnetron sputtering cathode and magnetron sputtering device
阅读说明:本技术 一种阴极体组件、磁控溅射阴极及磁控溅射装置 (Cathode body assembly, magnetron sputtering cathode and magnetron sputtering device ) 是由 梅艳慧 于 2018-07-11 设计创作,主要内容包括:本申请实施例提供了一种阴极体组件、磁控溅射阴极及磁控溅射装置,涉及磁控溅射领域,可提高靶材表面的水平磁场强度。该阴极体组件包括:阴极板,还包括:设置在阴极板一侧板面上的磁路组件,磁路组件包括:中间磁体组件和环绕中间磁体组件的外圈磁体组件;其中,中间磁体组件和外圈磁体组件背离阴极板一侧的磁极极性相反;中间磁体组件包括至少1组中间磁体组;外圈磁体组件包含至少1组外圈磁体组;且中间磁体组的组数与外圈磁体组的组数之和大于2。用于阴极体组件及包括该阴极体组件的磁控溅射阴极、磁控溅射装置的制备。(The embodiment of the application provides a cathode body assembly, a magnetron sputtering cathode and a magnetron sputtering device, relates to the field of magnetron sputtering, and can improve the horizontal magnetic field intensity on the surface of a target material. The cathode body assembly includes: the cathode plate still includes: set up the magnetic circuit subassembly on negative plate one side face, magnetic circuit subassembly includes: a middle magnet assembly and an outer ring magnet assembly surrounding the middle magnet assembly; the polarities of the magnetic poles of the middle magnet assembly and the outer ring magnet assembly on the side away from the cathode plate are opposite; the intermediate magnet assembly comprises at least 1 set of intermediate magnet sets; the outer ring magnet assembly comprises at least 1 outer ring magnet group; and the sum of the number of the groups of the middle magnet groups and the number of the groups of the outer ring magnet groups is more than 2. The method is used for preparing the cathode body assembly, the magnetron sputtering cathode comprising the cathode body assembly and the magnetron sputtering device.)
1. A cathode body assembly comprising: a cathode plate, wherein the cathode body assembly further comprises:
set up the magnetic circuit subassembly on a side face of negative plate, the magnetic circuit subassembly includes: a middle magnet assembly and an outer ring magnet assembly surrounding the middle magnet assembly;
wherein the polarities of the poles of the intermediate magnet assembly and the outer ring magnet assembly on the side facing away from the cathode plate are opposite;
the intermediate magnet assembly comprises at least 1 set of intermediate magnet sets;
the outer ring magnet assembly comprises at least 1 outer ring magnet assembly;
and the sum of the number of the middle magnet groups and the number of the outer ring magnet groups is more than 2.
2. The cathode body assembly of claim 1, wherein the intermediate magnet assembly comprises at least 2 sets of the intermediate magnet sets;
wherein 1 group of the intermediate magnet groups arranged at the innermost side is a first intermediate magnet group; except the first middle magnet group, the rest middle magnet groups are annular and sequentially surround the first middle magnet group from inside to outside.
3. The cathode body assembly of claim 2,
the first middle magnet group is a whole magnet;
alternatively, the first and second electrodes may be,
the first intermediate magnet group includes a plurality of spaced apart magnet segments.
4. The cathode body assembly of claim 2, wherein each of the remaining sets of intermediate magnets in the intermediate magnet assembly, except for the first set of intermediate magnets, is a one-piece magnet;
alternatively, the first and second electrodes may be,
each of the remaining sets of intermediate magnets in the intermediate magnet assembly, except for the first set of intermediate magnets, includes a plurality of magnet blocks arranged at intervals.
5. The cathode body assembly of claim 1,
each outer ring magnet group is a whole magnet;
alternatively, the first and second electrodes may be,
each outer ring magnet group comprises a plurality of magnet blocks arranged at intervals.
6. The cathode body assembly of claim 1,
the middle magnet group is a magnet or an electromagnetic coil,
and/or the presence of a gas in the gas,
the outer ring magnet group is a magnet or an electromagnetic coil.
7. The cathode body assembly of claim 6, wherein the magnet is comprised of neodymium iron boron.
8. A magnetron sputtering cathode comprising the cathode body assembly of any one of claims 1 to 7.
9. The magnetron sputtering cathode according to claim 8, further comprising:
the target is arranged on one side, away from the cathode plate, of the magnetic circuit assembly;
an outer frame assembly disposed outside the cathode body assembly;
the electric leading-in structure is arranged on one side of the cathode plate, which is far away from the magnetic circuit assembly, and is in contact with the cathode plate;
a cover plate assembly supporting the cathode body assembly and the outer frame assembly; wherein the electrical lead-in structure is in contact with the cathode plate through the cover plate assembly.
10. The magnetron sputtering cathode according to claim 9,
the middle magnet assembly comprises at least 2 groups of the middle magnet groups, wherein 1 group of the middle magnet groups arranged at the innermost side is a first middle magnet group;
the first intermediate magnet group corresponds to a center of the target.
11. The magnetron sputtering cathode according to claim 9,
and the outermost group of the outer ring magnet assemblies corresponds to the edge of the target.
12. Magnetron sputtering apparatus comprising a magnetron sputtering cathode as claimed in any one of claims 8 to 11.
Technical Field
The application relates to the field of magnetron sputtering, in particular to a cathode body assembly, a magnetron sputtering cathode and a magnetron sputtering device.
Background
Magnetron sputtering is one of the most important vacuum deposition (PVD) techniques.
Disclosure of Invention
In order to overcome the defects in the prior art, embodiments of the present application provide a cathode body assembly, a magnetron sputtering cathode, and a magnetron sputtering apparatus, which can enhance the horizontal magnetic field strength on the surface of a target.
In order to achieve the purpose, the technical scheme is as follows:
in one aspect, an embodiment of the present application provides a cathode body assembly, including: a cathode plate, the cathode body assembly further comprising: set up the magnetic circuit subassembly on a side face of negative plate, the magnetic circuit subassembly includes: a middle magnet assembly and an outer ring magnet assembly surrounding the middle magnet assembly; wherein the polarities of the poles of the intermediate magnet assembly and the outer ring magnet assembly on the side facing away from the cathode plate are opposite; the intermediate magnet assembly comprises at least 1 set of intermediate magnet sets; the outer ring magnet assembly comprises at least 1 outer ring magnet group; and the sum of the number of the middle magnet groups and the number of the outer ring magnet groups is more than 2.
Optionally, the intermediate magnet assembly comprises at least 2 sets of said intermediate magnet sets; wherein 1 group of the intermediate magnet groups arranged at the innermost side is a first intermediate magnet group; except the first middle magnet group, the rest middle magnet groups are annular and sequentially surround the first middle magnet group from inside to outside.
Optionally, the first intermediate magnet group is a one-piece magnet; alternatively, the first intermediate magnet group includes a plurality of magnet blocks arranged at intervals.
Optionally, each of the other sets of intermediate magnet groups in the intermediate magnet assembly, except for the first intermediate magnet group, is a one-piece magnet; alternatively, each of the remaining sets of intermediate magnet assemblies, other than the first set of intermediate magnets, includes a plurality of magnet blocks arranged at intervals.
Optionally, each outer ring magnet group is a whole magnet; alternatively, each outer ring magnet group comprises a plurality of magnet blocks arranged at intervals.
Optionally, the middle magnet group is a magnet or an electromagnetic coil, and/or the outer ring magnet group is a magnet or an electromagnetic coil. The magnet is made of neodymium iron boron.
On the other hand, the embodiment of the application also provides a magnetron sputtering cathode which comprises the cathode body assembly. The magnetron sputtering cathode further comprises: the target is arranged on one side, away from the cathode plate, of the magnetic circuit assembly; an outer frame assembly disposed outside the cathode body assembly; the electric leading-in structure is arranged on one side of the cathode plate, which is far away from the magnetic circuit assembly, and is in contact with the cathode plate; a cover plate assembly supporting the cathode body assembly and the outer frame assembly; wherein the electrical lead-in structure is in contact with the cathode plate through the cover plate assembly.
Optionally, the intermediate magnet assembly includes at least 2 sets of the intermediate magnet sets, wherein the innermost set of 1 set of the intermediate magnet sets is a first intermediate magnet set; the first intermediate magnet group corresponds to a center of the target.
Optionally, the outermost one of the outer ring magnet assemblies corresponds to an edge of the target.
In another aspect, the embodiment of the present application further provides a magnetron sputtering apparatus, including the magnetron sputtering cathode.
In view of this, in the cathode body assembly provided in this embodiment of the present application, since the magnetic poles of the middle magnet assembly and the outer ring magnet assembly on the side away from the cathode plate are opposite, the middle magnet assembly includes at least 1 middle magnet group, the outer ring magnet assembly includes at least 1 outer ring magnet group, and the sum of the number of the middle magnet groups and the number of the outer ring magnet groups is greater than 2, that is, at least one of the middle magnet assembly and the outer ring magnet assembly includes a plurality of magnet groups. Therefore, magnetic lines of force with the same direction can be generated between each group of middle magnet groups and each group of outer ring magnet groups, the number of groups forming the magnetic lines of force is more than 2, and a plurality of groups of magnetic lines of force can be mutually overlapped. Thus, compared with the arrangement mode in the prior art in which the magnetic lines of force are mutually offset, by adopting the arrangement mode provided by the embodiment of the present application, the horizontal magnetic field strength on the surface of the target material can be effectively enhanced by utilizing the mutual overlapping of multiple groups of magnetic lines of force in the same direction, so that the sputtering requirement of the target material which can realize sputtering only by using higher horizontal magnetic field strength can be met.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic diagram of a cathode body assembly of the prior art;
fig. 2 is a schematic view of magnetic lines of force of the magnetic circuit assembly in fig. 1 forming a magnetic field on the surface of the target;
FIG. 3 is a schematic structural diagram of a cathode assembly according to an embodiment of the present disclosure;
fig. 4 is a schematic top view of the arrangement of the magnetic circuit assembly of fig. 3;
fig. 5 is a schematic view of the magnetic circuit assembly in fig. 3 forming magnetic lines of force of a magnetic field on the surface of the target;
FIG. 6 is a schematic diagram showing the comparison between the horizontal magnetic field intensity formed on the target surface by a cathode body assembly according to the present embodiment and a cathode body assembly of the prior art;
fig. 7 is a schematic top view of a magnetic circuit assembly in a cathode assembly according to an embodiment of the present disclosure;
fig. 8 is a schematic top view illustrating an arrangement of a magnetic circuit assembly in a cathode body assembly according to an embodiment of the present disclosure;
fig. 9 is a schematic top view of a magnetic circuit assembly in a cathode assembly according to an embodiment of the present disclosure;
fig. 10 is a schematic structural diagram of a magnetron sputtering cathode provided in an embodiment of the present application.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present application more comprehensible, embodiments of the present application are described in detail below with reference to the accompanying drawings. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
For a better understanding of the embodiments of the present application, the following detailed description of the prior art is provided.
As shown in fig. 1, a cathode body assembly 01' of the prior art includes a magnetic circuit assembly 10' and a cathode plate 20 '. A target 04 'for sputtering is disposed above the magnetic circuit assembly 10'. Wherein, the magnetic circuit assembly 10 'is arranged on one side plate surface of the cathode plate 20'.
The magnetic circuit assembly 10' may be exemplified by 4 magnet sets, namely, a first ring-
Thus, since the magnetic field lines are emitted from the N pole and then returned to the S pole, the magnetic field lines in different directions are generated between the magnet groups having the above arrangement in the prior art as shown by the dotted arrows in fig. 2. That is, the direction of the magnetic lines of force b3 'formed between the
As shown in fig. 3, the present embodiment provides a
For example, the
It should be noted that the
Second, the schematic diagram of the
As shown in fig. 4: the
Here, fig. 3 described above specifically includes only 2 sets of intermediate magnet groups as the intermediate magnet assembly 11:
for example, the
It will be appreciated that when outer
Thirdly, in the above fig. 3, only the setting mode that the magnetic pole of the
Fourth, when magnetron sputtering is performed using the
Because the directions of all the magnetic lines of force are the same and a plurality of groups of magnetic lines of force are mutually overlapped, the horizontal magnetic field intensity on the surface of the target material can be effectively enhanced. Thus, the magnetic lines of force generated by the lower
In view of this, in the
Thus, compared with the arrangement mode in the prior art in which the magnetic lines of force are mutually offset, by adopting the arrangement mode provided by the embodiment of the present application, the horizontal magnetic field strength on the surface of the target material can be effectively enhanced by utilizing the mutual overlapping of multiple groups of magnetic lines of force in the same direction, so that the sputtering requirement of the target material which can realize sputtering only by using higher horizontal magnetic field strength can be met.
In addition, when the
Further, taking the arrangement of the magnetic circuit assembly shown in fig. 4 as an example, the applicant performed a comparison experiment on the cathode body assembly provided in the example of the present application and a cathode body assembly in the prior art, and the comparison result is shown in fig. 6 (the conversion unit between the unit mT and the unit Gs of the ordinate in the figure is: 1mT ═ 10Gs), so as to further verify the effect of the example of the present application on improving the horizontal magnetic field strength of the target surface.
When the magnetron sputtering is carried out on the target material by adopting the arrangement mode of the existing magnetic circuit components, the magnetic field strength measured by a gaussmeter in the width range of 15-55mm from the center to the edge of the target material is as follows: bmax (maximum magnetic field strength) is 290-.
When the cathode body assembly provided by the embodiment of the application performs magnetron sputtering on the target, the magnetic field strength measured by a gaussmeter in the width range of 25-50mm from the center to the edge of the target is as follows: bmax is 610-770 Gs.
As shown in fig. 6 (the conversion unit between unit mT and unit Gs of the ordinate in the graph is: 1mT ═ 10Gs), it can be found through comparison that, when the cathode body assembly provided in the embodiment of the present application is used to sputter a target, the horizontal magnetic field on the surface of the target is significantly increased in the region where the target width is 25 to 50mm, and the requirement for sputtering a dense ITO (Indium Tin Oxide) film can be satisfied, compared with the cathode body assembly in the prior art.
Moreover, when the pressure in the sputtering chamber is 0.95Pa and the power of the sputtering power supply is 5kW, because the horizontal magnetic field intensity on the surface of the target material is enhanced, compared with the existing planar magnetron cathode sputtering voltage of 421V, the changed planar magnetron cathode sputtering voltage of the cathode body assembly provided by the embodiment of the application when sputtering the target material is 371V, which reduces 50V.
In an embodiment of the present application, the
The other middle magnet groups except the first middle magnet group are all ring-shaped, and the ring shape can be a circular ring, a rectangular ring, a polygonal ring and the like.
Various arrangements of the magnet sets are possible, as described below:
illustratively, the first intermediate magnet assembly is a one-piece magnet or includes a plurality of spaced apart magnet segments.
Specifically, when the first intermediate magnet group includes a plurality of magnet blocks arranged at intervals, the plurality of magnet blocks arranged at intervals may be arranged in a ring shape or a bar shape.
For example, each of the remaining sets of intermediate magnets in the intermediate magnet assembly, except for the first intermediate magnet set, is a one-piece magnet or includes a plurality of magnet blocks arranged at intervals.
Each outer ring magnet group is a one-piece magnet or comprises a plurality of magnet blocks arranged at intervals.
For example, the middle magnet set is a magnet or an electromagnetic coil, and/or the outer ring magnet set is a magnet or an electromagnetic coil.
It should be noted that, in the case that one set of the middle magnet set or one set of the outer ring magnet set is a whole magnet, the whole magnet is a magnet or an electromagnetic coil; in the case where the middle magnet group or the outer magnet group includes a plurality of magnet blocks arranged at intervals, each magnet block is a magnet or an electromagnetic coil.
Specifically, the material constituting the magnet is neodymium iron boron.
On the basis of the above, 4 specific arrangements of the magnetic circuit assemblies are provided below to describe in detail the
The following 4 arrangements of the magnetic circuit assemblies are described only by taking as an example the case where the intermediate magnet assembly specifically includes 2 sets of intermediate magnet assemblies:
as shown in fig. 4 and 7 to 9, the
Arrangement mode one
The arrangement mode is as follows: referring to fig. 7, each of the
Wherein, a plurality of
Further, from the
Arrangement mode two
The arrangement mode is as follows: referring to fig. 8, the
The magnet blocks of the
The magnetic field formed by the magnetic circuit assemblies adopting the first arrangement mode and the second arrangement mode is rectangular and is suitable for rectangular targets.
Arrangement mode three
The arrangement mode is as follows: referring to fig. 9, each of the
Wherein the
Further, from the
Arrangement mode four
The arrangement mode is as follows: referring to fig. 4, the
The magnet blocks of the
The magnetic field formed by the magnetic circuit assemblies adopting the third arrangement mode and the fourth arrangement mode is circular, and is suitable for circular targets.
Here, compare in aforementioned arrangement mode one and arrangement mode three, in magnetic circuit assembly's installation, because the magnet piece that a plurality of intervals set up compares a monoblock magnet installation more convenient, consequently adopt the magnetic circuit assembly of arrangement mode two and arrangement mode four to be more favorable to the installation.
In the first to fourth arrangements, in the case where the one set of middle magnet group or the one set of outer ring magnet group is a single monolithic magnet, the monolithic magnet may be a magnet or an electromagnetic coil; also, in the case where a group of the middle magnet group or a group of the outer ring magnet groups includes a plurality of magnet blocks arranged at intervals, each magnet block may be specifically a magnet or an electromagnetic coil. For a specific arrangement mode of the whole magnet or the plurality of magnet blocks arranged at intervals, please refer to the detailed description of the first to fourth arrangement modes, which is not repeated herein.
Further, the material constituting the magnet is preferably neodymium iron boron, which is excellent in magnetic property and further increases the surface magnetic field strength of the target material.
On the basis of the above, as shown in fig. 10, the embodiment of the present application further provides a magnetron sputtering cathode, including the above
Further, the magnetron sputtering cathode also comprises the following structure:
the
an outer frame member 03 disposed outside the
an electric lead-in structure 05 arranged on one side of the
a cover plate component 02 for supporting the
wherein the electrical lead-in structure 05 is in contact with the
The first outer frame member 03 may be an anode frame member.
In the sputtering process of the target, the anode frame assembly can intercept electrons emitted by non-target parts, so that glow discharge is not generated, sputtering of non-target materials is prevented, and the purity of a deposited film is ensured.
Second, the above-mentioned electrical introduction structure 05 may be specifically a copper rod, which introduces an electric field for the magnetron sputtering cathode by contacting with the
Third, the
Further, in order to improve the utilization rate of the target material, the intermediate magnet assembly comprises at least 2 groups of intermediate magnet groups, wherein 1 group of intermediate magnet groups arranged at the innermost side is a first intermediate magnet group; the first intermediate magnet group corresponds to the center of the target.
Illustratively, referring to fig. 3, when the
Illustratively, referring to fig. 3, the outermost one of the outer
It should be noted that, when the outer ring magnet assembly only includes one outer ring magnet set, the outermost outer ring magnet set is the outer ring magnet set; when the outer ring magnet assembly includes at least 2 outer ring magnet assemblies, the outermost outer ring magnet assembly is the outermost ring magnet assembly relative to the middle magnet assembly.
Thus, the arrangement mode can ensure that the area of the surface of the target is positioned in the range of the magnetic lines formed between the magnet groups as much as possible, thereby improving the utilization rate of the target.
On the basis, further, the embodiment of the application also provides a magnetron sputtering device, which comprises the magnetron sputtering cathode.
Other structures in the magnetron sputtering apparatus, such as the anode, the substrate of the film to be deposited, and the like, and the arrangement manner thereof can follow the related art, and the details thereof are not repeated in the embodiments of the present application.
The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present application are included in the scope of the present application, and therefore, the scope of the present application shall be subject to the protection scope of the appended claims.
The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present application, and shall be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
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