阅读说明：本技术 磁控等离子体成膜装置 (Magnetron plasma film forming apparatus ) 是由 森地健太 塘口直树 谷口刚志 于 2020-03-19 设计创作，主要内容包括：磁控溅射成膜装置(1)具备成膜辊(14)和与成膜辊(14)相对配置的磁控等离子体单元(15)。磁控等离子体单元(15)具备：旋转靶(16),其轴线在与成膜辊(14)的轴线相同的方向上延伸；和磁体单元(200),其配置于旋转靶(16)的径向内侧。在下述中所求出的角度(θ)是30度以下。在旋转靶(16)的外周面上,朝向旋转靶(16)的圆周方向的一方向测定旋转靶(16)的磁通密度的切线方向分量。求出连结相当于磁通密度的最大的切线方向分量的点(MAX＿P)和旋转靶(16)的中心的线段(LS1)与连结相当于磁通密度的最小的切线方向分量的点(MIN＿P)和中心的线段(LS2)所成的角度(θ)。(A magnetron sputtering film forming apparatus (1) is provided with a film forming roller (14) and a magnetron plasma unit (15) disposed so as to face the film forming roller (14). A magnetron plasma unit (15) is provided with: a rotating target (16) having an axis extending in the same direction as the axis of the film forming roller (14); and a magnet unit (200) disposed radially inward of the rotating target (16). The angle (θ) determined in the following is 30 degrees or less. On the outer peripheral surface of the rotating target (16), the tangential direction component of the magnetic flux density of the rotating target (16) is measured in one direction of the circumferential direction of the rotating target (16). An angle theta formed by a line segment LS1 connecting a point MAX _ P corresponding to the maximum tangential direction component of the magnetic flux density and the center of the rotary target 16 and a line segment LS2 connecting a point MIN _ P corresponding to the minimum tangential direction component of the magnetic flux density and the center is obtained.)

1. A magnetron plasma film forming apparatus is characterized in that,

the magnetron plasma film forming apparatus includes:

a film forming roller; and

a magnetron plasma unit disposed opposite to the film forming roller,

the magnetron plasma unit includes:

a rotating target having an axis extending in the same direction as the axis of the film forming roller; and

a magnet unit disposed radially inside the rotating target,

the angle theta determined in the following is 30 degrees or less,

measuring a tangential component of a magnetic flux density of the rotating target in a circumferential direction of the rotating target on an outer peripheral surface of the rotating target,

an angle theta is obtained between a line segment connecting a point corresponding to the maximum tangential component of the magnetic flux density and the center of the rotating target and a line segment connecting a point corresponding to the minimum tangential component of the magnetic flux density and the center.

2. The magnetron plasma film forming apparatus according to claim 1,

the magnet unit is provided with a 1 st magnetic pole part, a 2 nd magnetic pole part, a 3 rd magnetic pole part and a 4 th magnetic pole part in sequence along the circumferential direction,

the 2 nd magnetic pole portion and the 3 rd magnetic pole portion have one of an N pole and an S pole,

the 1 st magnetic pole portion and the 4 th magnetic pole portion have the other magnetic pole,

in a cross-sectional view orthogonal to the axis of the rotating target, an imaginary line passing through the 2 nd magnetic pole portion and along the magnetization direction of the 2 nd magnetic pole portion intersects with an imaginary line passing through the 3 rd magnetic pole portion and along the magnetization direction of the 3 rd magnetic pole portion so as to converge while approaching the center of the deposition roller.

3. The magnetron plasma film forming apparatus according to claim 1,

the magnet unit is provided with a 1 st magnetic pole part, a 2 nd magnetic pole part, a 3 rd magnetic pole part and a 4 th magnetic pole part in sequence along the circumferential direction,

the 2 nd magnetic pole portion and the 3 rd magnetic pole portion have one of an N pole and an S pole,

the 1 st magnetic pole portion and the 4 th magnetic pole portion have the other magnetic pole,

in a cross-sectional view orthogonal to the axis of the rotating target, an imaginary line passing through the 1 st magnetic pole portion and along the magnetization direction of the 1 st magnetic pole portion intersects with an imaginary line passing through the 4 th magnetic pole portion and along the magnetization direction of the 4 th magnetic pole portion so as to converge while being away from the film forming roller.

4. The magnetron plasma film forming apparatus according to claim 1,

the magnet unit is provided with a 1 st magnetic pole part, a 2 nd magnetic pole part, a 3 rd magnetic pole part and a 4 th magnetic pole part in sequence along the circumferential direction,

the 1 st magnetic pole portion, the 2 nd magnetic pole portion, the 3 rd magnetic pole portion, and the 4 th magnetic pole portion are each fixed to a fixing member, and have a substantially rectangular shape having a fixing side fixed to the fixing member and an opposite side located on a side opposite to the fixing side when viewed in cross section orthogonal to the axis of the rotary target,

the ratio D/L of the separation distance D between the opposite side and the fixed side to the length L of the opposite side is 1.5 or more.

Technical Field

The present invention relates to a magnetron plasma film forming apparatus.

Background

Conventionally, a magnetron sputtering film forming apparatus including a film forming roller and a magnetron sputtering unit opposed to the film forming roller is known as a magnetron plasma film forming apparatus.

In this magnetron sputtering apparatus, the magnetron sputtering unit generates a magnetic field, whereby electrons released from the target are kept long, and the sputtering efficiency is improved.

For example, a magnetron sputtering film forming apparatus including a tube and 4 magnets held by a yoke in the tube has been proposed (for example, see patent document 1 listed below). In patent document 1, each of the 4 magnets has a rectangular cross-sectional shape having a fixed side fixed to the yoke and an opposite side located opposite to the fixed side when viewed in cross section.

Documents of the prior art

Patent document

Patent document 1: japanese laid-open patent publication No. 2017-150082

Disclosure of Invention

Problems to be solved by the invention

However, in the structure disclosed in patent document 1, a tunnel-shaped magnetic field corresponding to the adjacent outer magnet and inner magnet is generated.

In recent years, a magnetron plasma film forming apparatus is required to have a high film forming speed.

However, the structure of patent document 1 has a limit in obtaining a high film formation rate.

The invention provides a magnetron plasma film forming apparatus capable of forming a film at a high film forming speed.

Means for solving the problems

The present invention (1) includes a magnetron plasma film forming apparatus including: a film forming roller; and a magnetron plasma unit disposed opposite to the film formation roller, the magnetron plasma unit including: a rotating target having an axis extending in the same direction as the axis of the film forming roller; and a magnet unit disposed radially inward of the rotary target, wherein an angle θ obtained in the following is 30 degrees or less.

The tangential component of the magnetic flux density of the rotating target is measured in one direction in the circumferential direction of the rotating target on the outer circumferential surface of the rotating target.

An angle theta is obtained between a line segment connecting a point corresponding to the maximum tangential component of the magnetic flux density and the center of the rotating target and a line segment connecting a point corresponding to the minimum tangential component of the magnetic flux density and the center.

In this magnetron plasma film forming apparatus, since the angle θ is as small as 30 degrees or less, the distance in the circumferential direction between the plasma corresponding to the maximum tangential direction component of the magnetic flux density and the plasma corresponding to the minimum tangential direction component of the magnetic flux density is short on the outer peripheral surface of the rotating target, and therefore, a region where the density of electrons emitted from the rotating target is high can be concentrated. As a result, a film can be formed at a high film forming rate.

The present invention (2) is the magnetron plasma film forming apparatus described in (1), wherein the magnet unit includes a 1 st magnetic pole portion, a 2 nd magnetic pole portion, a 3 rd magnetic pole portion, and a 4 th magnetic pole portion in this order along a circumferential direction, the 2 nd magnetic pole portion and the 3 rd magnetic pole portion have one of an N pole and an S pole, the 1 st magnetic pole portion and the 4 th magnetic pole portion have the other, and an imaginary line passing through the 2 nd magnetic pole portion and along a magnetization direction of the 2 nd magnetic pole portion and an imaginary line passing through the 3 rd magnetic pole portion and along a magnetization direction of the 3 rd magnetic pole portion intersect so as to converge while approaching a center of the film forming roller in a cross-sectional view orthogonal to an axis of the rotating target.

According to this magnetron plasma film forming apparatus, the angle θ can be reliably reduced to 30 degrees or less. Therefore, the film can be formed at a higher film forming rate.

The present invention (3) is the magnetron plasma film forming apparatus described in (1) or (2), wherein the magnet unit includes a 1 st magnetic pole portion, a 2 nd magnetic pole portion, a 3 rd magnetic pole portion, and a 4 th magnetic pole portion in this order along a circumferential direction, the 2 nd magnetic pole portion and the 3 rd magnetic pole portion have one of an N pole and an S pole, the 1 st magnetic pole portion and the 4 th magnetic pole portion have the other, and an imaginary line passing through the 1 st magnetic pole portion and along a magnetization direction of the 1 st magnetic pole portion and an imaginary line passing through the 4 th magnetic pole portion and along a magnetization direction of the 4 th magnetic pole portion intersect so as to converge while being away from the film forming roller in a cross-sectional view orthogonal to an axis of the rotating target.

According to this magnetron plasma film forming apparatus, the angle θ can be reliably reduced to 30 degrees or less. Therefore, the film can be formed at a higher film forming rate.

The present invention (4) includes the magnetron plasma film forming apparatus described in any one of (1) to (3), wherein the magnet unit includes a 1 st magnetic pole portion, a 2 nd magnetic pole portion, a 3 rd magnetic pole portion, and a 4 th magnetic pole portion in this order along a circumferential direction, the 1 st magnetic pole portion, the 2 nd magnetic pole portion, the 3 rd magnetic pole portion, and the 4 th magnetic pole portion are respectively fixed to a fixing member, and when viewed in a cross section orthogonal to an axis of the rotary target, the magnet unit has a substantially rectangular shape having a fixing side fixed to the fixing member and an opposite side located on a side opposite to the fixing side, and a ratio (D/L) of a separation distance D between the opposite side and the fixing side to a length L of the opposite side is 1.5 or more.

According to this magnetron plasma film forming apparatus, the maximum and minimum magnetic flux densities at the 2-point can be made larger and smaller. Therefore, plasma having a high electron density can be generated, and the film formation efficiency is excellent.

ADVANTAGEOUS EFFECTS OF INVENTION

The magnetron plasma film forming apparatus of the present invention can form a film at a high film forming speed.

Drawings

Fig. 1 is a sectional view of a magnetron sputtering film deposition apparatus according to an embodiment of the present invention.

Fig. 2 is an enlarged cross-sectional view of a magnetron plasma unit provided in the magnetron sputtering film formation apparatus of fig. 1.

Fig. 3 is a sectional view of the magnet unit shown in fig. 2.

Fig. 4 is a graph showing the relationship between the tangential direction component of the magnetic flux density and the angle θ of the rotating targets of example 1 and comparative example 1.

Fig. 5A to 5B are examples in which the 1 st magnetic pole portion and the 4 th magnetic pole portion are N poles, and the 2 nd magnetic pole portion and the 3 rd magnetic pole portion are S poles, fig. 5A is a cross-sectional view, and fig. 5B is a graph showing a relationship between a tangential direction component of a magnetic flux density of a rotating target and an angle θ.

Fig. 6 is a sectional view of the magnet unit of comparative example 1.

Detailed Description

A magnetron sputtering film deposition apparatus as an embodiment of the magnetron plasma film deposition apparatus according to the present invention will be described with reference to fig. 1 to 4.

In fig. 3, the magnet unit 20 (discussed later) is depicted without hatching in order to clearly show the magnetization directions (arrows) of the 1 st to 4 th magnetic pole portions 31 to 34 (discussed later).

As shown in fig. 1, the magnetron sputtering film formation apparatus 1 is a roll-to-roll film formation apparatus that forms a film 42 on a substrate 41 (performs film formation) while conveying the substrate 41. The magnetron sputtering film forming apparatus 1 includes a conveying unit 2 and a film forming unit 3.

The conveyance unit 2 includes a conveyance case 11, a delivery roller 5, a winding roller 6, a guide roller 27, and a vacuum pump 26.

The conveyance case 11 has a substantially box shape extending along the conveyance direction. The conveyance case 11 houses the delivery roller 5, the take-up roller 6, and the guide roller 27.

The delivery roller 5 and the take-up roller 6 are disposed at the upstream end and the downstream end in the transport direction in the transport casing 11, respectively.

The guide roller 27 is disposed in plurality between the delivery roller 5 and the winding roller 6. The plurality of guide rollers 27 are disposed so that the base material 41 is wound around the film formation roller 14.

The vacuum pump 26 is provided in the conveyance case 11.

The film forming section 3 includes a film forming casing 12, a film forming roller 14, and a plurality of magnetron plasma units 15.

The film formation casing 12 is continuous with the conveyance casing 11, and constitutes a vacuum chamber together with the conveyance casing 11. The film formation case 12 has a substantially box shape. The film formation case 12 has a plurality of partition walls 25. The plurality of partition walls 25 extend toward the film forming roller 14. The film formation case 12 is provided with a sputtering gas supply device, not shown. The film formation case 12 houses a film formation roller 14 and a plurality of magnetron plasma units 15.

The axis of the film forming roller 14 is along the width direction orthogonal to the conveyance direction and the thickness direction of the base material 41.

The plurality of magnetron plasma units 15 are arranged to face the radially outer side of the film forming roll 14. The plurality of magnetron plasma units 15 are arranged at intervals from each other in the circumferential direction of the film forming roller 14.

Circumferentially adjacent magnetron plasma cells 15 are separated by a partition wall 25. The space partitioned by the partition wall 25 constitutes the film forming chamber 10. The film forming chamber 10 is partitioned into a plurality of chambers in a film forming case 12 (vacuum chamber). 1 magnetron plasma unit 15 is provided in 1 film forming chamber 10. Each of the plurality of magnetron plasma units 15 includes a plasma housing 23, a 1 st unit 24, and a 2 nd unit 28.

As shown in fig. 2, the plasma housing 23 has a substantially box shape with one side opened toward the film forming roller 14. The plasma housing 23 extends along the axis of the film forming roller 14. The plasma housing 23 houses the 1 st unit 24 and the 2 nd unit 28. The 1 st unit 24 and the 2 nd unit 28 are adjacently disposed with a space therebetween in the circumferential direction of the film forming roller 14. The 1 st unit 24 and the 2 nd unit 28 face the film forming roller 14 via an opening of the plasma casing 23.

The unit 1, 24 and the unit 2, 28 are identical in structure except for the direction of rotation of the rotating target 16 (discussed later). Therefore, the unit 1 24 will be described in detail, and the unit 2 28 will be simply described.

As shown in fig. 3, the 1 st unit 24 includes the rotary target 16 and the magnet unit 20.

The rotating target 16 has a cylindrical shape, and has an axis AL (center in section) parallel to the axis of the film forming roller 14. The rotating target 16 can rotate (can move in a circling manner) in a direction opposite to the direction of rotation of the film formation roller 14, for example. The rotary target 16 is electrically connected to a cathode source (not shown), and thus can function as a cathode. In addition, a target material is laminated on the outer peripheral surface of the rotary target 16, that is, the rotary target 16 has a material for forming the film 42 on the outer peripheral surface. Examples of the material include metal oxides containing at least 1 metal selected from the group consisting of In, Sn, Zn, Ga, Sb, Nb, Ti, Si, Zr, Mg, Al, Au, Ag, Cu, Pd, and W. Specifically, for example, indium-containing oxides such as indium tin composite oxide (ITO), antimony-containing oxides such as antimony tin composite oxide (ATO), and the like can be cited.

The magnet unit 20 is housed inside the rotating target 16 in the radial direction. The magnet unit 20 includes a fixing member 19, two 1 st magnets 21, and two 2 nd magnets 22.

The fixing member 19 has a narrow plate shape extending in the axial direction of the film forming roller 14, and is called a yoke. The fixing member 19 includes one main surface (one surface in the thickness direction) 17 and the other main surface 18 (the other surface in the thickness direction). The one main surface 17 and the other main surface 18 are both flat surfaces. One main surface 17 is opposed to the film forming roller 14. The other main surface 18 is parallel to the one main surface 17. Examples of the material of the fixing member 19 include metals such as iron.

The two 1 st magnets 21 and the two 2 nd magnets 22 each have a quadrangular prism shape extending in the axial direction of the film forming roller 14. Two 1 st magnets 21 and two 2 nd magnets 22 are fixed to one main surface 17 of the fixing member 19. The two 1 st magnets 21 and the two 2 nd magnets 22 are disposed adjacent to each other in the width direction of the fixing member 19. Specifically, the two 1 st magnets 21 and the two 2 nd magnets 22 contact each other in the width direction.

The two 1 st magnets 21 and the two 2 nd magnets 22 include a 1 st magnetic pole portion 31, a 2 nd magnetic pole portion 32, a 3 rd magnetic pole portion 33, and a 4 th magnetic pole portion 34 when viewed in cross section along the width direction and the thickness direction (corresponding to a direction orthogonal to the axis of the rotary target 16) of the fixed member 19.

The 1 st magnetic pole portion 31, the 2 nd magnetic pole portion 32, the 3 rd magnetic pole portion 33, and the 4 th magnetic pole portion 34 are arranged in this order along the first direction in the circumferential direction (the rotation direction of the rotary target 16). The 1 st magnetic pole portion 31, the 2 nd magnetic pole portion 32, the 3 rd magnetic pole portion 33, and the 4 th magnetic pole portion 34 are arranged in this order so as to contact with each other toward one side in the width direction of the fixed member 19.

The 2 nd magnetic pole portion 32 and the 3 rd magnetic pole portion 33 are constituted by two 1 st magnets 21. These 2 nd and 3 rd magnetic pole portions 32 and 33 have, for example, N poles. The 1 st magnetic pole part 31 and the 4 th magnetic pole part 34 are constituted by, for example, the 2 nd magnet 22. The 1 st magnetic pole part 31 and the 4 th magnetic pole part 34 have an S pole.

In cross section, the 1 st magnetic pole portion 31, the 2 nd magnetic pole portion 32, the 3 rd magnetic pole portion 33, and the 4 th magnetic pole portion 34 have substantially rectangular shapes having the same shape. In cross section, each of the 1 st, 2 nd, 3 rd and 4 th magnetic pole portions 31, 32, 33 and 34 has a substantially rectangular shape having: a fixing edge 37 fixed to the one main surface 17 of the fixing member 19; an opposite edge 38, which is located on the opposite side to the fixed edge 37; and two side edges 39 joining the two end edges of the fixed edge 37 and the opposite edge 38.

The fixing sides 37 of the 1 st, 2 nd, 3 rd, and 4 th magnetic pole portions 31, 32, 33, and 34 are disposed on the one principal surface 17. The opposite sides 38 of the 1 st, 2 nd, 3 rd and 4 th magnetic pole portions 31, 32, 33 and 34 are parallel to the one principal surface 17 of the fixed member 19. The opposing sides 38 of the 1 st, 2 nd, 3 rd, and 4 th magnetic pole portions 31, 32, 33, and 34 are continuous in the width direction, specifically, flush (form 1 flat surface).

The 1 st, 2 nd, 3 rd and 4 th magnetic pole portions 31, 32, 33 and 34 have a dimension in which the length in the thickness direction is longer than the length in the width direction. That is, the ratio (D/L) of the separation distance D between the opposite side 38 and the fixed side 37 to the length L of the opposite side 38 is, for example, more than 1, preferably 1.4 or more, more preferably 1.5 or more, further preferably 1.6 or more, and particularly preferably 1.7 or more. The ratio (D/L) is also, for example, 6 or less. The ratio (D/L) is not less than the lower limit described above, and the maximum magnetic flux density at the point MAX _ P described later can be made larger, and the minimum magnetic flux density at the point MIN _ P described later can be made smaller. This enables the film 42 to be formed at a higher film formation rate.

In a cross-sectional view, the magnetization directions of the 1 st magnetic pole part 31, the 2 nd magnetic pole part 32, the 3 rd magnetic pole part 33, and the 4 th magnetic pole part 34 are inclined with respect to the thickness direction of the fixing member 19 (corresponding to the normal direction of the one principal surface 17 of the fixing member 19) (also corresponding to the opposing direction of the fixing side 37 and the opposing side 38), and are also inclined with respect to the width direction of the fixing member 19.

For example, the magnetization directions of the 2 nd magnetic pole portion 32 and the 3 rd magnetic pole portion 33 are inclined outward in the width direction of the fixing member 19 as being distant from the deposition roller 14 in the normal direction of the fixing member 19. The magnetization directions of the 1 st magnetic pole portion 31 and the 4 th magnetic pole portion 34 are inclined outward in the width direction of the fixing member 19 as approaching the center of the deposition roller 14 in the normal direction of the fixing member 19.

More specifically, in a cross-sectional view, an imaginary line IL2 that passes through the 2 nd magnetic pole part 32 and that is along the magnetization direction of the 2 nd magnetic pole part 32 intersects an imaginary line IL3 that passes through the 3 rd magnetic pole part 33 and that is along the magnetization direction of the 3 rd magnetic pole part 33 so as to converge while approaching the center of the deposition roller 14. Therefore, the magnetic flux on the surface of the rotary target 16 can be concentrated by the intersection of the virtual line IL2 and the virtual line IL 3. Thereby, the two magnetic fields of the tunnel shape approach each other, and the angle θ discussed later can be reliably made smaller to 30 degrees or less. As a result, a film can be formed at a higher film forming rate.

An angle formed by a line segment from the intersection CP1 of the two imaginary lines IL2 and IL3 to the 2 nd magnetic pole part 32 and a line segment from the intersection CP1 to the 3 rd magnetic pole part 33 is, for example, 135 degrees or less, preferably 90 degrees or less, more preferably 80 degrees or less, and exceeds, for example, 20 degrees, preferably 30 degrees or more, more preferably 40 degrees or more.

On the other hand, in a cross-sectional view, an imaginary line IL1 passing through the 1 st magnetic pole part 31 and along the magnetization direction of the 1 st magnetic pole part 31 and an imaginary line IL4 passing through the 4 th magnetic pole part 34 and along the magnetization direction of the 4 th magnetic pole part 34 intersect so as to converge while being apart from the deposition roller 14. Therefore, the magnetic flux on the surface of the rotary target 16 can be concentrated by the intersection of the virtual line IL1 and the virtual line IL 4. Thus, the two tunnel-shaped magnetic fields approach each other, and the angle θ described later can be reliably reduced to 30 degrees or less, thereby enabling film formation at a higher film formation rate.

An angle formed by a line segment from the intersection CP2 of the two imaginary lines IL1 and IL4 to the 1 st magnetic pole part 31 and a line segment from the intersection CP2 to the 4 th magnetic pole part 34 is, for example, 135 degrees or less, preferably 90 degrees or less, more preferably 80 degrees or less, and exceeds, for example, 20 degrees, preferably 30 degrees or more, more preferably 40 degrees or more.

As a material of the 1 st magnet 21 and the 2 nd magnet 22, for example, a permanent magnet such as a neodymium magnet is exemplified.

As shown in fig. 2, the 2 nd unit 28 includes the rotating target 16 rotatable in the same direction as the rotation direction of the deposition roller 14, and the magnet unit 20 described above.

In this embodiment, the angle θ obtained as described below is 30 degrees or less.

On the outer peripheral surface of the rotating target 16, a tangential direction component of the magnetic flux density is measured in one direction of the circumferential direction of the rotating target. An angle theta is obtained between a line segment LS1 connecting a point MAX _ P corresponding to the maximum tangential component of the magnetic flux density and the center of the rotary target 16 and a line segment LS2 connecting a point MIN _ P corresponding to the minimum tangential component of the magnetic flux density and the center. The angle θ is obtained by simulation of a magnetic field using commercially available software, for example.

Here, a tangential direction component of the magnetic flux density obtained by the above-described simulation is described.

As shown in fig. 3, in the 1 st element 24, a 1 st magnetic field MF1 (depicted at a plurality of dots) having a tunnel shape is generated from the opposite side 38 of the 2 nd magnetic pole part 32 having the N-pole toward the opposite side 38 of the 1 st magnetic pole part 31 having the S-pole. In this embodiment, since the 2 nd magnetic pole portion 32 is an N pole and the 1 st magnetic pole portion 31 is an S pole, the minimum magnetic flux density (that is, the strongest value of the magnetic field on the negative side) is obtained by measuring the tangential direction component of the magnetic flux density in the circumferential direction of the rotary target 16 and in the direction from the 1 st magnetic pole portion 31 toward the 2 nd magnetic pole portion 32 (see MIN _ P in fig. 4).

Further, a tunnel-shaped 2 nd magnetic field MF2 (depicted at a plurality of dots) is generated from the opposite side 38 of the 3 rd magnetic pole portion 33 having the N pole toward the opposite side 38 of the 4 th magnetic pole portion 34 having the S pole. In this embodiment, since the 3 rd magnetic pole portion 33 is an N pole and the 4 th magnetic pole portion 34 is an S pole, the maximum magnetic flux density (that is, the strongest value of the magnetic field on the positive side) is obtained by measuring the tangential direction component of the magnetic flux density in the circumferential direction of the rotary target 16 and in the direction from the 3 rd magnetic pole portion 33 toward the 4 th magnetic pole portion 34. (refer to MAX _ P in FIG. 4).

Therefore, if the tangential direction component of the magnetic flux density is measured in the circumferential direction of the rotary target 16 and in the direction from the 1 st magnetic pole portion 31 toward the 4 th magnetic pole portion 34, the minimum and maximum values can be observed in order as shown in fig. 4.

The unit 2 28 is also the same as the unit 1 24.

Note that the point MAX _ P corresponding to the maximum tangential component of the magnetic flux density and the point MIN _ P corresponding to the minimum tangential component are synonymous with two points that are the largest in absolute value of the tangential component corresponding to the magnetic flux density.

The angle θ is the angle on the film-forming roller 14 side among the angles formed by the two line segments LS1 and LS2 described above.

However, when the angle θ exceeds 30 degrees, as shown by the broken line in fig. 4 and fig. 6, the distance in the circumferential direction between the plasma corresponding to the largest tangential component of the magnetic flux density and the plasma corresponding to the smallest tangential component of the magnetic flux density becomes farther on the radially outer side of the rotating target 16. Therefore, the region where the density of electrons released from the rotating target 16 is concentrated is dispersed. Therefore, there is a limit to film formation at a high film formation rate.

In contrast, in this embodiment, as shown in fig. 3, since the angle θ is as small as 30 degrees or less, the distance in the circumferential direction between the plasma corresponding to the largest tangential component of the magnetic flux density and the plasma corresponding to the smallest tangential component of the magnetic flux density becomes shorter on the radially outer side of the rotating target 16. Therefore, a region where the density of electrons discharged from the rotating target 16 is concentrated can be made. Therefore, the film can be formed at a high film forming speed.

The above-mentioned film forming rate is actually determined by forming the film 42 on the substrate 41 using the magnetron sputtering film forming apparatus 1, and dividing a value obtained by multiplying the thickness of the film 42 by the transport speed of the substrate 41 by the cathode voltage of the rotating target 16. The film formation rate is also called the dynamic rate. The unit of the film forming speed is, for example, [ nm · m/sec/kW ]. The film formation rate can also be determined by a lean fluid simulation using commercially available software.

The angle θ is preferably 27 degrees or less, more preferably 26 degrees or less, further preferably 25 degrees or less, and particularly preferably 23 degrees or less. In addition, the angle is usually 10 degrees or more. If the angle θ is equal to or greater than the lower limit, it is possible to suppress the magnetic flux density from excessively decreasing, and to generate plasma continuously.

Next, a method for forming the film 42 on the substrate 41 using the magnetron sputtering film formation apparatus 1 will be described.

First, a magnetron sputtering film formation apparatus 1 shown in fig. 1 was prepared.

Next, the long substrate 41 is set in the magnetron sputtering film formation apparatus 1. The substrate 41 is not particularly limited, and examples thereof include a polymer film and a glass film (thin film glass). Examples of the polymer film include a polyester film (e.g., a polyethylene terephthalate (PET) film, a polybutylene terephthalate film, and a polyethylene naphthalate film), a polycarbonate film, an olefin film (e.g., a polyethylene film, a polypropylene film, and a cycloolefin film), an acrylic film, a polyether sulfone film, a polyarylate film, a melamine film, a polyamide film, a polyimide film, a cellulose film, and a polystyrene film.

In order to mount the substrate 41 on the magnetron sputtering film formation apparatus 1, as shown in fig. 1, the substrate 41 is wound around the delivery roll 5, and then the substrate 41 is wound around the film formation roll 14 and wound around the winding roll 6 while one end portion in the longitudinal direction of the substrate 41 is guided by the plurality of guide rolls 27.

Next, the vacuum pump 26 is driven to vacuum the inside of the conveyance case 11 and the film formation case 12. At the same time, a sputtering gas is supplied into the film formation case 12 from a sputtering gas supply device not shown. Examples of the sputtering gas include an inert gas such as argon, and a reactive gas containing oxygen.

Next, while continuously conveying the base material 41 from the feed roller 5 toward the take-up roller 6, a cathode voltage is applied to the rotating target 16. Thereby, electrons are released from the rotating target 16.

Thus, the electrons described above are held longer in both the 1 st magnetic field MF1 and the 2 nd magnetic field MF2 of the 1 st cell 24 and the 2 nd cell 28, respectively.

Then, atoms (specifically, argon atoms) derived from the sputtering gas efficiently collide with the rotating target 16, and thereby particles of the material of the rotating target 16 adhere from the rotating target 16 to the base material 41 on the outer peripheral surface of the film formation roller 14. As a result, as shown in fig. 1, a film 42 is formed on the substrate 41 by sputtering.

In the magnetron sputtering film formation apparatus 1, since the angle θ is as small as 30 degrees or less, the distance in the circumferential direction between the plasma corresponding to the maximum tangential direction component of the magnetic flux density and the plasma corresponding to the minimum tangential direction component of the magnetic flux density is short outside the film formation roller 14, and therefore, a region where the density of electrons emitted from the rotating target 16 is high can be concentrated. Therefore, the film 42 can be formed on the substrate 41 at a high film formation rate (film formation).

In the magnetron sputtering film formation apparatus 1, in a cross section, an imaginary line IL2 passing through the 2 nd magnetic pole part 32 and along the magnetization direction of the 2 nd magnetic pole part 32 and an imaginary line IL3 passing through the 3 rd magnetic pole part 33 and along the magnetization direction of the 3 rd magnetic pole part 33 intersect so as to converge while approaching the center of the film formation roller, and therefore, the magnetic flux on the surface of the rotating target 16 can be concentrated. Thus, the two tunnel-shaped magnetic fields approach each other, and the angle θ can be reliably reduced to 30 degrees or less. Therefore, the film 42 can be formed at a higher film formation rate.

In the magnetron sputtering film formation apparatus 1, when viewed in cross section, the imaginary line IL1 that passes through the 1 st magnetic pole portion 31 and that is along the magnetization direction of the 1 st magnetic pole portion 31 and the imaginary line IL4 that passes through the 4 th magnetic pole portion 34 and that is along the magnetization direction of the 4 th magnetic pole portion 34 converge and intersect so as to be distant from the rotary target 16, and therefore, the magnetic flux on the surface of the rotary target 16 can be concentrated. Thus, the two tunnel-shaped magnetic fields approach each other, and the angle θ can be reliably reduced to 30 degrees or less. Therefore, the film 42 can be formed at a higher film formation rate.

In the magnetron sputtering film formation apparatus 1, in the 1 st to 4 th magnetic pole portions 31 to 34, if the ratio (D/L) of the separation distance D between the fixed side 37 and the opposite side 38 to the length L of the fixed side 37 is 1.5 or more, the maximum tangential component of the magnetic flux density can be made larger, and the minimum tangential component of the magnetic flux density can be made smaller, so that the film 42 can be efficiently formed on the substrate 41 at a higher film formation rate.

In the present embodiment, since the magnetron plasma unit 15 includes the rotatable cylindrical rotating target 16, even if the angle θ is reduced to 30 degrees or less, the rotating target 16 can be rotated, and thus the rotating target 16 is uniformly thinned in the circumferential direction. Therefore, the film 42 can be formed at a high film forming speed by uniform sputtering.

In one embodiment, the magnetization directions of the 1 st magnetic pole part 31, the 2 nd magnetic pole part 32, the 3 rd magnetic pole part 33, and the 4 th magnetic pole part 34 are inclined with respect to the normal direction and the width direction of the fixed member 19, and the angle θ relating to the magnetic flux density is set to 30 degrees or less, but the method of setting the angle θ to the upper limit or less is not limited to the above method.

< modification example >

In the following modifications, the same members and steps as those of the above-described embodiment are denoted by the same reference numerals, and detailed description thereof is omitted. Each modification can provide the same operational effects as those of the first embodiment, except for the specific description. Further, one embodiment and its modified examples can be combined as appropriate.

In one embodiment, the magnetron sputtering film formation apparatus 1 is illustrated as an example of the magnetron plasma film formation apparatus of the present invention, but a plasma CVD film formation apparatus, for example, can also be illustrated.

In one embodiment, the 2 nd and 3 rd magnetic pole portions 32 and 33 have N poles, and the 1 st and 4 th magnetic pole portions 31 and 34 have S poles, but the opposite is also possible.

That is, as shown in fig. 5A, the 1 st and 4 th magnetic pole portions 31 and 34 are N poles, and the 2 nd and 3 rd magnetic pole portions 32 and 33 are S poles. Then, when the tangential component of the magnetic flux density is measured from the 1 st magnetic pole part 31 toward the 4 th magnetic pole part 34 in the circumferential direction of the rotating target 16, as shown in fig. 5B, first, the maximum value (MAX _ P) is obtained in the 1 st magnetic field MF1, and then, the minimum value (MIN _ P) is obtained in the 2 nd magnetic field MF2, and the angle θ is obtained from these values. According to this modification, the same effects as those of the first embodiment can be obtained.

Examples

The present invention will be described in more detail below by referring to examples, production examples, comparative examples and comparative production examples. The present invention is not limited to the examples, the production examples, the comparative examples, and the comparative production examples.

In addition, specific numerical values such as the blending ratio (ratio), the physical property value, and the parameter used in the following description may be replaced with upper limits (numerical values defined as "lower" and "lower" or lower limits (numerical values defined as "upper" and "lower" respectively) or lower limits (numerical values defined as "upper" and "lower" respectively) described in association with the blending ratio (ratio), the physical property value, and the parameter described in the above-described "embodiment".

Example 1

A magnetron sputtering film forming apparatus 1 according to an embodiment was prepared.

The 1 st magnetic pole portion 31 to the 4 th magnetic pole portion 34 each have the sectional dimensions shown in table 1, and the magnetization direction is shown in fig. 3 as shown in table 1.

Example 2

A magnetron sputtering film forming apparatus 1 was prepared in the same manner as in example 1 except that the magnetic poles of the 1 st magnetic pole portion 31 and the 2 nd magnetic pole portion 32 were exchanged and the magnetic poles of the 3 rd magnetic pole portion 33 and the 4 th magnetic pole portion 34 were exchanged.

Comparative example 1

A magnetron sputtering film forming apparatus 1 was prepared in the same manner as in example 1, except that the sectional dimensions of the 1 st magnetic pole portion 31 to the 4 th magnetic pole portion 34 were changed as shown in table 1.

The 1 st magnetic pole portion 31 to the 4 th magnetic pole portion 34 each have the sectional dimensions shown in table 1, and the magnetization direction is shown in fig. 6 as shown in table 1.

Examples 3 to 7

A magnetron sputtering film forming apparatus 1 was prepared in the same manner as in example 1, except that the magnetization directions (IL1 to IL4) and/or the sectional dimensions of the 1 st to 4 th magnetic pole portions 31 to 34 were changed as shown in table 1.

In the 1 st to 4 th magnetic pole portions 31 to 34 of the above-described examples to comparative examples, the magnetization directions were adjusted in advance so as to be the magnetization directions shown in table 1.

Production example 1

Using the magnetron sputtering film formation apparatus 1 of example 1, the film 42 was formed on the substrate 41 as described in table 2.

Comparative production example 1

Using the magnetron sputtering film formation apparatus 1 of comparative example 1, the film 42 was formed on the substrate 41 as described in table 2.

< evaluation >

The following items were evaluated for the film formation properties of the magnetron sputtering film formation apparatuses 1 and production examples 1 and 1 of examples 1 and 2 and comparative example 1, respectively.

The results are shown in tables 1 and 3.

(1) Angle theta

The angle θ was obtained by a finite element method magnetic field simulation using the following software. The relationship between the magnetic flux density and the measurement direction (one direction in the circumferential direction) in the measurement of the angle θ is shown in fig. 4 (example 1 and comparative example 1) and fig. 5B (example 2).

Software name: JMAG (JMAG JSOL)

The calculation method comprises the following steps: finite element method

(2) Film Forming speed A

The film formation rate was determined by a thin fluid simulation using the following software. The film formation rates of examples 1 to 7 were determined as ratios when the film formation rate of comparative example 1 was set to 100.

Software name: DSMC-Neutrals (product of WaveFront corporation)

The calculation method comprises the following steps: direct Simulation Monte Carlo (DSMC: Direct Simulation Monte Carlo) method

(3) Film Forming speed B

The film formation rates (dynamic rates) of production example 1 and comparative production example 1 were actually measured. The film formation speed (dynamic rate) is obtained by dividing the value obtained by multiplying the thickness of the film 42 by the transport speed of the substrate 41 by the cathode voltage of the rotating target 16. The film formation rate of production example 1 was 27% higher than that of comparative production example 1.

As is clear from tables 1 and 3, the film formation rates a (calculated values) of example 1 and comparative example 1 slightly deviate from the film formation rates B (actually measured values) of production example 1 and comparative production example 1 (and thus the degree of improvement). This depends on the following matters.

That is, in the simulation for calculating the film formation rate a, the behavior of the particles discharged from the rotating target 16 is calculated by approximating the behavior of the particles discharged from the rotating target 16 in a cross section in a direction orthogonal to the axis of the rotating target 16 (so-called 2-dimensional cross section), that is, the behavior of the particles discharged from the rotating target 16 in the axis direction is not considered. On the other hand, in the measurement (actually measured) of the film formation rate B, the action in the axial direction of the rotating target 16 is included (considered) in the measured value.

(4) Resistivity of

The films 42 of production example 1 and comparative production example 1 were annealed by heating. The surface resistance of the annealed film 42 was measured by the four-probe method. The surface resistance of production example 1 was lower by 15% than that of comparative production example 1. That is, the conductivity is excellent.

[ Table 1]

[ Table 2]

Substrate 41	PET
		Rotating target 16	ITO
Sputtering gas	Mixed gas of argon and oxygen
		Pressure in the film formation case 12	0.5Pa
Cathode voltage of the rotating target 16	2kW
		Transport speed of the substrate 41	1 m/min

[ Table 3]

The above invention is provided as an exemplary embodiment of the present invention, but this is merely an example and is not to be construed as a limitation. Variations of the invention that are obvious to those skilled in the art are intended to be encompassed by the foregoing claims.

Industrial applicability

The magnetron sputtering film forming apparatus of the present invention is used for film formation.

Description of the reference numerals

1. A magnetron sputtering film forming apparatus; 14. a film forming roller; 15. a magnetron plasma unit; 16. rotating the target; 19. a fixing member; 20. a magnet unit; 31. a 1 st magnetic pole part; 32. a 2 nd magnetic pole part; 33. a 3 rd magnetic pole part; 34. a 4 th magnetic pole part; 37. fixing the edge; 38. opposite sides; l, length of opposite side; D. a separation distance; LS1, a line segment connecting a point corresponding to the maximum tangential component of the magnetic flux density and the center; LS2, a line segment connecting a point corresponding to the minimum tangential component of the magnetic flux density and the center; IL1, line segment from the intersection to the 1 st magnetic pole part; IL2, line segment from the intersection to the 2 nd magnetic pole portion; IL3, line segment from the intersection to the 3 rd magnetic pole part; IL4, line segment from the intersection to the 4 th magnetic pole part.