阅读说明：本技术 一种基于张应变扩散阻挡层的激光器件及其制备方法 (Laser device based on tensile strain diffusion barrier layer and preparation method thereof ) 是由 王朝旺 刘飞 于军 邓桃 于 2019-11-25 设计创作，主要内容包括：本发明实施例公开了一种基于张应变扩散阻挡层的激光器件及其制备方法,所述器件包括由下至上依次设置的GaAs衬底、GaAs缓冲层、Ga-(x1)In-(1-x1)P下过渡层、Al-(1-x2)In-(x2)P下限制层、(Al-(1-x3)Ga-(x3))-(y1)In-(1-y1)P下波导层、Ga-(1-x4)In-(x4)P第一量子阱、(Al-(1-x5)Ga-(x5))-(y2)In-(1-y2)P垒层、Ga-(1-x6)In-(x6)P第二量子阱、(Al-(1-x7)Ga-(x7))-(y3)In-(1-y3)P上波导层、(Al-(1-)-(x8)Ga-(x8))-(y4)In-(1-y4)P扩散阻挡层、Al-(1-x9)In-(x9)P第一上限制层、Ga-(1-x10)In-(x10)P腐蚀终止层、Al-(1-x11)In-(x11)P第二上限制层、Ga-(1-x12)In-(x12)P上过渡层和GaAs帽层。本发明采用张应变扩散阻挡层,减少了P限制层掺杂剂向有源区的扩散,降低了内损耗；带隙增加,降低了N限制层电子扩散；提高了光限制因子。与现有生长方法相比,此方法可提高光电转效率,提高半导体激光器的高温高可靠性,有利于实现小功率红光激光器的高温高可靠性应用。(The embodiment of the invention discloses a laser device based on a tensile strain diffusion barrier layer and a preparation method thereof, wherein the device comprises a GaAs substrate, a GaAs buffer layer and Ga which are sequentially arranged from bottom to top x1 In 1‑x1 P lower transition layer, Al 1‑x2 In x2 P lower limiting layer, (Al) 1‑x3 Ga x3 ) y1 In 1‑y1 P lower waveguide layer, Ga 1‑x4 In x4 P first quantum well, (Al) 1‑x5 Ga x5 ) y2 In 1‑y2 P barrier layer and Ga 1‑x6 In x6 P second quantum well, (Al) 1‑x7 Ga x7 ) y3 In 1‑y3 P upper waveguide layer, (Al) 1‑ x8 Ga x8 ) y4 In 1‑y4 P diffusion barrier layer, Al 1‑x9 In x9 P first upper confinement layer, Ga 1‑x10 In x10 P corrosion stop layer, Al 1‑x11 In x11 P second upper confinement layer, Ga 1‑x12 In x12 Transition layer on P and GaAn As cap layer. The invention adopts the tensile strain diffusion barrier layer, reduces the diffusion of the dopant of the P limiting layer to the active region and reduces the internal loss; the band gap is increased, and the electron diffusion of the N limiting layer is reduced; the light confinement factor is improved. Compared with the existing growing method, the method can improve the photoelectric conversion efficiency, improve the high-temperature and high-reliability of the semiconductor laser, and is beneficial to realizing the high-temperature and high-reliability application of the low-power red laser.)

1. A laser device based on a tensile strain diffusion barrier layer is characterized in that the device comprises a structure which is sequentially arranged from bottom to topGaAs substrate, GaAs buffer layer, Ga_x1In_1-x1P lower transition layer, Al_1-x2In_x2P lower limiting layer, (Al)_1-x3Ga_x3)_y1In_1-y1P lower waveguide layer, Ga_1-x4In_x4P first quantum well, (Al)_1-x5Ga_x5)_y2In_1-y2P barrier layer and Ga_1-x6In_x6P second quantum well, (Al)_{1- x7}Ga_x7)_y3In_1-y3P upper waveguide layer, (Al)_1-x8Ga_x8)_y4In_1-y4P diffusion barrier layer, Al_1-x9In_x9P first upper confinement layer, Ga_{1- x10}In_x10P corrosion stop layer, Al_1-x11In_x11P second upper confinement layer, Ga_1-x12In_x12P is an upper transition layer and a GaAs cap layer;

wherein x1 is more than or equal to 0.45 and less than or equal to 0.55, x2 is more than or equal to 0.6 and less than or equal to 0.4 and less than or equal to 0.6, x3 is more than or equal to 0.05 and less than or equal to 0.7, y1 is more than or equal to 0.3 and less than or equal to 0.6, x5 is more than or equal to 0.3 and less than or equal to 0.6, y2 is more than or equal to 0.45 and less than or equal to 0.7, x6 is more than or equal to 0.3 and less than or equal to 0.5, y3 is more than or equal to 0.3 and less than or equal to 0.7, x8 is more than or equal to 0.5, y4 is more than or equal to 0.55 and less than or equal to 0.7, x9 is more than or equal to 0.6, x10 is more than or equal to 0..

2. A method for preparing a laser device based on a tensile strain diffusion barrier layer, which is based on the laser device in claim 1, and is characterized in that the method comprises the following steps:

s1, placing the GaAs substrate in a growth chamber of MOCVD equipment, H₂The environment is heated to 720 +/-10 ℃ for baking, and AsH is introduced₃Carrying out surface heat treatment on the GaAs substrate;

s2, slowly reducing the temperature to 700 +/-10 ℃, continuously introducing TMGa and AsH3, and growing a GaAs buffer layer on the GaAs substrate;

s3, keeping the temperature at 700 +/-10 ℃, and continuously introducing TMIn, TMGa and PH₃Growing Ga on the GaAs buffer layer_1-xIn_xP lower transition layer;

s4, keeping the temperature at 700 +/-10 ℃, continuously introducing TMIn, TMAl and PH3, and growing n-type Al on the lower transition layer_{1- x2}In_x2P is lowerA confinement layer;

s5, slowly changing the temperature to 650 +/-10 ℃, and introducing TMIn, TMAl, TMGa and PH₃Growing (Al) on said lower confinement layer_{1- x3}Ga_x3)_y1In_1-y1A P lower waveguide layer;

s6, keeping the temperature at 650 +/-10 ℃, and continuously introducing TMIn, TMGa and PH₃Growing Ga on the lower waveguide layer_{1- x4}In_x4P first quantum well;

s7, keeping the temperature at 650 +/-10 ℃, and continuously introducing TMIn, TMAl, TMGa and PH₃Growing (Al) on the first quantum well_1-x5Ga_x5)_y2In_1-y2A P barrier layer;

s8, keeping the temperature at 650 +/-10 ℃, and continuously introducing TMIn, TMAl, TMGa and PH₃Growing Ga on the barrier layer_{1- x6}In_x6P second quantum well;

s9, keeping the temperature at 650 +/-10 ℃, and continuously introducing TMIn, TMAl, TMGa and PH₃Growing (Al) on the second quantum well_1-x7Ga_x7)_y3In_1-y3A P upper waveguide layer;

s10, keeping the temperature at 650 +/-10 ℃, and continuously introducing TMIn, TMAl, TMGa and PH₃Growing an unintentional doping (Al) on said upper waveguide layer_1-x8Ga_x8)_y4In_1-y4A P diffusion barrier layer;

s11, gradually changing the temperature to 700 +/-10 ℃, continuously introducing TMIn, TMAl and PH3, and growing Al on the diffusion barrier layer_{1- x9}In_x9P a first upper confinement layer;

s12, keeping the temperature at 700 +/-10 ℃, continuing to introduce TMIn, TMAl and PH3, and growing doped Ga on the first upper limiting layer 1_1-x10In_x10P corrosion stop layer;

s13, keeping the temperature at 700 +/-10 ℃, continuously introducing TMIn, TMAl and PH3, and growing doped Al on the corrosion stop layer_1-x11In_x11P a second upper confinement layer;

s14, reducing the temperature to 660 +/-10 ℃, and continuously introducing TMIn, TMGa and PH₃At the first mentionedGrowing Ga on the second upper limiting layer_1-x12In_x12P an upper transition layer;

s15, reducing the temperature to 540 +/-10 ℃, and continuously introducing TMGa and AsH₃And growing a GaAs cap layer on the upper transition layer.

3. The method as claimed in claim 2, wherein the doping concentration of the lower transition layer is 5E17-5E18 atoms/cm in step S3³The thickness is 0.1-0.3 μm.

4. The method as claimed in claim 2, wherein in step S4, n-type Al is added_1-x2In_x2The thickness of the P lower limiting layer is 0.5-1.5 μm, and the doping concentration is 5E17-5E18 atoms/cm³。

5. The method for preparing a tensile strain diffusion barrier layer-based laser device as claimed in claim 2, wherein in step S5, the thickness of the lower waveguide layer is 0.05-0.15 μm; in step S6, the thickness of the first quantum well is 5-8 nm; in step S7, the thickness of the barrier layer is 5-10 nm; in step S8, the thickness of the second quantum well is 5-8 nm; in step S9, the thickness of the upper waveguide layer is 0.05-0.15 μm; in step S10, the thickness of the diffusion barrier layer is 5-15 nm; the lower waveguide layer, the first quantum well, the barrier layer, the second quantum well, the upper waveguide layer and the extension barrier layer are all unintentionally doped.

6. The method as claimed in claim 2, wherein in step S11, the first upper confinement layer has a thickness of 0.1-0.3 μm and a doping concentration of 3E17-1E18 atoms/cm³。

7. The method as claimed in claim 2, wherein in step S12, the etch stop layer has a thickness of 0.01-0.03 μm and is dopedThe concentration is 3E17-5E18 atoms/cm³。

8. The method as claimed in claim 2, wherein in step S13, the second upper confinement layer has a thickness of 0.5-1 μm and a doping concentration of 3E17-2E18 atoms/cm³。

9. The method as claimed in claim 2, wherein in step S14, the upper transition layer has a thickness of 0.01-0.05 μm and a doping concentration of 3E17-5E18 atoms/cm³。

10. The method as claimed in claim 2, wherein in step S15, the cap layer has a thickness of 0.1-0.5 μm and a doping concentration of 4E19-1E20 atoms/cm³。

Technical Field

The invention relates to the technical field of photoelectrons, in particular to a laser device based on a tensile strain diffusion barrier layer and a preparation method thereof.

Background

The GaInP/AlGaInP red laser has the characteristics of low price and long service life, and has wide application prospect in the fields of laser indication, industrial measurement and the like. In these applications, the high electro-optic conversion efficiency and the good working stability are not only helpful to reduce the heat productivity of the device, reduce the heat dissipation cost of the device, realize the miniaturization and portability of the device, and improve the light output power of the semiconductor laser, but also determine the service life of the device, and become a current research hotspot.

In order to ensure the growth quality of crystals, higher growth temperature is needed, and P-type dopants Mg and Zn commonly used by AlGaInP materials at present have certain high-temperature diffusivity, so that a large number of point defects can be formed when the P-type dopants Mg and Zn are diffused into an active region, the high-temperature aging performance is influenced, and meanwhile, the internal loss is increased due to the absorption of hole carriers; GaInP and Al (Ga) InP materials have small conduction band gap difference and are easy to generate carrier leakage, wherein the electron leakage is dominant, so that the threshold current is increased and the internal quantum efficiency is reduced; light emitted by the quantum well diffuses out of the waveguide layer, so that carrier scattering and absorption loss are caused, internal loss of the laser is increased, and electro-optic conversion efficiency is reduced. The increase of the internal loss not only affects the electro-optic conversion efficiency, but also generates a large amount of heat, causes further leakage of carriers, and affects the reliability and the service life of the device.

Diffusion barriers are widely used to reduce dopant diffusion, and are mainly divided into three areas: (1) the P-type dopant is used for diffusing In non-In materials GaAs, GaP and the like, the diffusion speed is low, a steep interface is easy to form, and the diffusion barrier layer plays a role of a diffusion barrier layer, but the diffusion barrier layer has the defects of As/P interface switching and large lattice difference, so that the threshold current is increased, and the photoelectric conversion efficiency is reduced; (2) n-type doping is used as a diffusion barrier layer, but the built-in electric field is formed to further increase the voltage; (3) the undoped layer is used as a diffusion barrier layer, in which case the effect of the dopant on the band enhancement is almost negligible, and the electron leakage cannot be reduced.

Disclosure of Invention

In order to solve the above problems, embodiments of the present invention provide a laser device based on a tensile strain diffusion barrier layer and a manufacturing method thereof, where the barrier layer is subjected to tensile strain, a band gap is increased, electron leakage is reduced, an optical confinement factor is increased, internal loss is reduced, and photoelectric conversion efficiency and high temperature reliability are improved.

In order to solve the technical problem, the embodiment of the invention discloses the following technical scheme:

the invention provides a laser device based on a tensile strain diffusion barrier layer, which comprises a GaAs substrate, a GaAs buffer layer and Ga which are arranged from bottom to top in sequence_x1In_1-x1P lower transition layer, Al_1-x2In_x2P lower limiting layer, (Al)_1-x3Ga_x3)_y1In_1-y1P lower waveguide layer, Ga_1-x4In_x4P first quantum well, (Al)_1-x5Ga_x5)_y2In_1-y2P barrier layer and Ga_1-x6In_x6P second quantum well, (Al)_1-x7Ga_x7)_y3In_1-y3P upper waveguide layer, (Al)_1-x8Ga_x8)_y4In_1-y4P diffusion barrier layer, Al_1-x9In_x9P first upper confinement layer, Ga_1-x10In_x10P corrosion stop layer, Al_1-x11In_x11P second upper confinement layer, Ga_1-x12In_x12P is an upper transition layer and a GaAs cap layer;

wherein x1 is more than or equal to 0.45 and less than or equal to 0.55, x2 is more than or equal to 0.6 and less than or equal to 0.4 and less than or equal to 0.6, x3 is more than or equal to 0.05 and less than or equal to 0.7, y1 is more than or equal to 0.3 and less than or equal to 0.6, x5 is more than or equal to 0.3 and less than or equal to 0.6, y2 is more than or equal to 0.45 and less than or equal to 0.7, x6 is more than or equal to 0.3 and less than or equal to 0.5, y3 is more than or equal to 0.3 and less than or equal to 0.7, x8 is more than or equal to 0.5, y4 is more than or equal to 0.55 and less than or equal to 0.7, x9 is more than or equal to 0.6, x10 is more than or equal to 0..

The invention provides a preparation method of a laser device based on a tensile strain diffusion barrier layer, which comprises the following steps:

s1, placing the GaAs substrate in a growth chamber of MOCVD equipment, H₂The environment is heated to 720 +/-10 ℃ for baking, and AsH is introduced₃Carrying out surface heat treatment on the GaAs substrate;

s2, slowly reducing the temperature to 700 +/-10 ℃, continuously introducing TMGa and AsH3, and growing a GaAs buffer layer on the GaAs substrate;

s3, keeping the temperature at 700 +/-10 ℃, and continuously introducing TMIn, TMGa and PH₃Growing Ga on the GaAs buffer layer_{1- x}In_xP lower transition layer;

s4, keeping the temperature at 700 +/-10 ℃, continuously introducing TMIn, TMAl and PH3, and growing n-type Al on the lower transition layer_1-x2In_x2A P lower limiting layer;

s5, slowly changing the temperature to 650 +/-10 ℃, and introducing TMIn, TMAl, TMGa and PH₃Growing (Al) on said lower confinement layer_1-x3Ga_x3)_y1In_1-y1A P lower waveguide layer;

s6, keeping the temperature at 650 +/-10 ℃, and continuously introducing TMIn, TMGa and PH₃Growing Ga on the lower waveguide layer_1-x4In_x4P first quantum well;

s7, keeping the temperature at 650 +/-10 ℃, and continuously introducing TMIn, TMAl, TMGa and PH₃Growing (Al) on the first quantum well_1-x5Ga_x5)_y2In_1-y2A P barrier layer;

s8, keeping the temperature at 650 +/-10 ℃, and continuously introducing TMIn, TMAl, TMGa and PH₃Growing Ga on the barrier layer_1-x6In_x6P second quantum well;

s9, keeping the temperature at 650 +/-10 ℃, and continuously introducing TMIn, TMAl, TMGa and PH₃Growing (Al) on the second quantum well_1-x7Ga_x7)_y3In_1-y3A P upper waveguide layer;

s10, keeping the temperature at 650 +/-10 ℃, and continuously introducing TMIn, TMAl, TMGa and PH₃Growing an unintentional doping (Al) on said upper waveguide layer_1-x8Ga_x8)_y4In_1-y4A P diffusion barrier layer;

s11, gradually changing the temperature to 700 +/-10 ℃, continuously introducing TMIn, TMAl and PH3, and growing Al on the diffusion barrier layer_1-x9In_x9P a first upper confinement layer;

s12, keeping the temperature at 700 +/-10 ℃, continuing to introduce TMIn, TMAl and PH3, and growing doped Ga on the first upper limiting layer 1_1-x10In_x10P corrosion stop layer;

s13, keeping the temperature at 700 +/-10 ℃, continuously introducing TMIn, TMAl and PH3, and growing doped Al on the corrosion stop layer_1-x11In_x11P a second upper confinement layer;

s14, reducing the temperature to 660 +/-10 ℃, and continuously introducing TMIn, TMGa and PH₃Growing Ga on the second upper confinement layer_1-x12In_x12P an upper transition layer;

s15, reducing the temperature to 540 +/-10 ℃, and continuously introducing TMGa and AsH₃And growing a GaAs cap layer on the upper transition layer.

Further, in step S3, the doping concentration of the lower transition layer is 5E17-5E18 atoms/cm³The thickness is 0.1-0.3 μm.

Further, in step S4, n-type Al_1-x2In_x2The thickness of the P lower limiting layer is 0.5-1.5 μm, and the doping concentration is 5E17-5E18 atoms/cm³。

Further, in step S5, the thickness of the lower waveguide layer is 0.05-0.15 μm; in step S6, the thickness of the first quantum well is 5-8 nm; in step S7, the thickness of the barrier layer is 5-10 nm; in step S8, the thickness of the second quantum well is 5-8 nm; in step S9, the thickness of the upper waveguide layer is 0.05-0.15 μm; in step S10, the thickness of the diffusion barrier layer is 5-15 nm; the lower waveguide layer, the first quantum well, the barrier layer, the second quantum well, the upper waveguide layer and the extension barrier layer are all unintentionally doped.

Further, in step S11, the first upper limiting layer has a thickness of 0.1-0.3 μm and a doping concentration of 3E17-1E18 atoms/cm³。

Further, in step S12, the etching stop layerThe thickness of the doped layer is 0.01-0.03 mu m, and the doping concentration is 3E17-5E18 atoms/cm³。

Further, in step S13, the second upper limiting layer has a thickness of 0.5-1 μm and a doping concentration of 3E17-2E18 atoms/cm³。

Further, in step S14, the upper transition layer has a thickness of 0.01-0.05 μm and a doping concentration of 3E17-5E18 atoms/cm³。

Further, in step S15, the cap layer has a thickness of 0.1-0.5 μm and a doping concentration of 4E19-1E20 atoms/cm³。

The effect provided in the summary of the invention is only the effect of the embodiment, not all the effects of the invention, and one of the above technical solutions has the following advantages or beneficial effects:

an unintentionally doped diffusion barrier layer (Al) is arranged between the upper waveguide layer and the first upper confinement layer_1-x8Ga_x8)_y4In_1-y4In P, y4 is more than or equal to 0.55 and less than or equal to 0.7, the In component is 0.3-0.45, the diffusion of the P limiting layer is inhibited when the In content is less, the lattice constant is less than the GaAs lattice constant, the barrier layer is subjected to tensile strain, the band gap is increased, the electron leakage is reduced, the light limiting factor is increased, the internal loss is reduced, and the photoelectric conversion efficiency and the high-temperature reliability are improved. Compared with the existing growth method, the structure adopts the tensile strain diffusion barrier layer to reduce the diffusion of P-type doping to the active region, reduce electron leakage and improve the light limiting factor, and the device has higher electro-optic conversion efficiency and better high-temperature reliability.

Drawings

In order to more clearly illustrate the embodiments or technical solutions in the prior art of the present invention, the drawings used in the description of the embodiments or prior art will be briefly described below, and it is obvious for those skilled in the art that other drawings can be obtained based on these drawings without creative efforts.

FIG. 1 is a schematic diagram of a laser device according to the present invention;

FIG. 2 is a schematic flow chart of a method for fabricating a laser device according to the present invention;

wherein, 1GaAs substrate, 2GaAs buffer layer, and 3Ga_x1In_1-x1P lower transition layer, 4Al_1-x2In_x2P lower limiting layer, 5 (Al)_1-x3Ga_x3)_y1In_1-y1P lower waveguide layer, 6Ga_1-x4In_x4P first quantum well, 7 (Al)_1-x5Ga_x5)_y2In_1-y2P barrier layer, 8Ga_{1- x6}In_x6P second quantum well, 9 (Al)_1-x7Ga_x7)_y3In_1-y3P upper waveguide layer, 10 (Al)_1-x8Ga_x8)_y4In_1-y4P diffusion barrier layer, 11Al_1-x9In_x9P first upper confinement layer, 12Ga_1-x10In_x10P corrosion stop layer, 13Al_1-x11In_x11P second upper confinement layer, 14Ga_1-x12In_x12P upper transition layer and 15GaAs cap layer.

Detailed Description

In order to clearly explain the technical features of the present invention, the following detailed description of the present invention is provided with reference to the accompanying drawings. The following disclosure provides many different embodiments, or examples, for implementing different features of the invention. To simplify the disclosure of the present invention, the components and arrangements of specific examples are described below. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. It should be noted that the components illustrated in the figures are not necessarily drawn to scale. Descriptions of well-known components and processing techniques and procedures are omitted so as to not unnecessarily limit the invention.

As shown in FIG. 1, the laser device based on the tensile strain diffusion barrier layer of the invention comprises a GaAs substrate 1, a GaAs buffer layer 2 and Ga which are arranged from bottom to top in sequence_x1In_1-x1P lower transition layer 3, Al_1-x2In_x2P lower limiting layer 4, (Al)_1-x3Ga_x3)_y1In_1-y1P lower waveguide layer 5, Ga_1-x4In_x4P first quantum well6、(Al_1-x5Ga_x5)_y2In_1-y2P barrier layer 7, Ga_1-x6In_x6P second quantum well 8, (Al)_1-x7Ga_x7)_y3In_1-y3P upper waveguide layer 9, (Al)_1-x8Ga_x8)_y4In_1-y4P diffusion barrier layer 10, Al_1-x9In_x9P first upper confinement layer 11, Ga_1-x10In_x10P etch stop layer 12, Al_1-x11In_x11P second upper confinement layer 13, Ga_1-x12In_x12A P upper transition layer 14 and a GaAs cap layer 15;

wherein x1 is more than or equal to 0.45 and less than or equal to 0.55, x2 is more than or equal to 0.6 and less than or equal to 0.4 and less than or equal to 0.6, x3 is more than or equal to 0.05 and less than or equal to 0.7, y1 is more than or equal to 0.3 and less than or equal to 0.6, x5 is more than or equal to 0.3 and less than or equal to 0.6, y2 is more than or equal to 0.45 and less than or equal to 0.7, x6 is more than or equal to 0.3 and less than or equal to 0.5, y3 is more than or equal to 0.3 and less than or equal to 0.7, x8 is more than or equal to 0.5, y4 is more than or equal to 0.55 and less than or equal to 0.7, x9 is more than or equal to 0.6, x10 is more than or equal to 0..

As shown in fig. 2, the method for manufacturing a laser device based on a tensile strain diffusion barrier layer according to the present invention includes the following steps:

s1, placing the GaAs substrate in a growth chamber of MOCVD equipment, H₂The environment is heated to 720 +/-10 ℃ and baked for 30 minutes, and AsH is introduced₃Removing water and oxygen on the surface of the substrate, and carrying out surface heat treatment on the GaAs substrate; h₂The flow rate of (1) is 8000-.

S2, slowly reducing the temperature to 700 +/-10 ℃, continuously introducing TMGa and AsH3, and growing a GaAs buffer layer on the GaAs substrate;

s3, keeping the temperature at 700 +/-10 ℃, and continuously introducing TMIn, TMGa and PH_3，Growing Ga on GaAs buffer layer_{1- x}In_xP lower transition layer;

s4, keeping the temperature at 700 +/-10 ℃, continuously introducing TMIn, TMAl and PH3, and growing n-type Al on the lower transition layer_1-x2In_x2A P lower limiting layer;

s5, slowly changing the temperature to 650 +/-10 ℃, and introducing TMIn, TMAl, TMGa and PH₃Growing (Al) on said lower confinement layer_1-x3Ga_x3)_y1In_1-y1A P lower waveguide layer;

s6, temperature protectionKeeping the temperature at 650 +/-10 ℃, and continuously introducing TMIn, TMGa and PH₃Growing Ga on the lower waveguide layer_1-x4In_x4P first quantum well;

s7, keeping the temperature at 650 +/-10 ℃, and continuously introducing TMIn, TMAl, TMGa and PH₃Growing (Al) on the first quantum well_1-x5Ga_x5)_y2In_1-y2A P barrier layer;

s8, keeping the temperature at 650 +/-10 ℃, and continuously introducing TMIn, TMAl, TMGa and PH₃Growing Ga on the barrier layer_1-x6In_x6P second quantum well;

s9, keeping the temperature at 650 +/-10 ℃, and continuously introducing TMIn, TMAl, TMGa and PH₃Growing (Al) on the second quantum well_1-x7Ga_x7)_y3In_1-y3A P upper waveguide layer;

s10, keeping the temperature at 650 +/-10 ℃, and continuously introducing TMIn, TMAl, TMGa and PH₃Growing an unintentional doping (Al) on said upper waveguide layer_1-x8Ga_x8)_y4In_1-y4A P diffusion barrier layer;

s11, gradually changing the temperature to 700 +/-10 ℃, continuously introducing TMIn, TMAl and PH3, and growing Al on the diffusion barrier layer_1-x9In_x9P a first upper confinement layer;

s12, keeping the temperature at 700 +/-10 ℃, continuing to introduce TMIn, TMAl and PH3, and growing doped Ga on the first upper limiting layer 1_1-x10In_x10P corrosion stop layer;

s13, keeping the temperature at 700 +/-10 ℃, continuously introducing TMIn, TMAl and PH3, and growing doped Al on the corrosion stop layer_1-x11In_x11P a second upper confinement layer;

s14, reducing the temperature to 660 +/-10 ℃, and continuously introducing TMIn, TMGa and PH₃Growing Ga on the second upper confinement layer_1-x12In_x12P an upper transition layer;

s15, reducing the temperature to 540 +/-10 ℃, and continuously introducing TMGa and AsH₃And growing a GaAs cap layer on the upper transition layer.

In step S2, the thickness of the GaAs buffer layer is 100-500nm, and the doping concentration is 5E17-5E18 atoms/cm³。

In step S3, the doping concentration of the lower transition layer is 5E17-5E18 atoms/cm³The thickness is 0.1-0.3 μm.

In step S4, n-type Al_1-x2In_x2The thickness of the P lower limiting layer is 0.5-1.5 μm, and the doping concentration is 5E17-5E18 atoms/cm³。

In step S5, the thickness of the lower waveguide layer is 0.05-0.15 μm; in step S6, the thickness of the first quantum well is 5-8 nm; in step S7, the thickness of the barrier layer is 5-10 nm; in step S8, the thickness of the second quantum well is 5-8 nm; in step S9, the thickness of the upper waveguide layer is 0.05-0.15 μm; in step S10, the diffusion barrier layer has a thickness of 5-15 nm. The lower waveguide layer, the first quantum well, the barrier layer, the second quantum well, the upper waveguide layer and the extension barrier layer are all unintentionally doped.

In step S11, the first upper limiting layer has a thickness of 0.1-0.3 μm and a doping concentration of 3E17-1E18 atoms/cm³。

In step S12, the etch stop layer has a thickness of 0.01-0.03 μm and a doping concentration of 3E17-5E18 atoms/cm³。

In step S13, the second upper limiting layer has a thickness of 0.5-1 μm and a doping concentration of 3E17-2E18 atoms/cm³。

In step S14, the upper transition layer has a thickness of 0.01-0.05 μm and a doping concentration of 3E17-5E18 atoms/cm³。

In step S15, the thickness of the cap layer is 0.1-0.5 μm, and the doping concentration is 4E19-1E20 atoms/cm³。

After the epitaxial growth is completed in the above steps S1-S15, an LD device is fabricated using a conventional LD packaging technique. In the preparation process of the GaAs-based LD, the pressure of MOCVD equipment is 50-200 mbar.

GaAs buffer layer and Ga_1-xIn_xP lower transition layer, Al_1-xIn_xThe N-type doping source of the P lower limiting layer is Si₂H₆；Al_1-xIn_xThe P type doping source of the P upper limiting layer is Cp₂Mg; the doping source of the GaAs cap layer is CBr₄。Si₂H₆The purity of (2) is 99.9999%; cp₂Mg purity of 99.9999%, Cp₂The temperature of the Mg thermostatic bath is 0-25 ℃, and CBr₄The temperature of the constant temperature bath is 10-25 ℃.

The purity of TMGa in steps S2, S3, S5-S10, S14 and S15 is 99.9999%, and the temperature of a thermostatic bath of TMGa is (-5) -15 ℃; in the steps S3-S14, the purity of the TMIn is 99.9999%, and the temperature of the thermostatic bath of the TMIn is (+)10- (+)25 ℃; the purity of TMAl in the steps S4, S5 and S7-S13 is 99.9999%, and the temperature of a thermostatic bath of the TMAl is 10-25 ℃; AsH in step S1₃The purity of (A) was 99.9999%.

In support of the implementation steps in the above steps S1-S15, the implementation process is exemplified below.

Example 1

The GaAs buffer layer grows from bottom to top in sequence, the thickness of the GaAs buffer layer is 100nm, and the doping concentration of the GaAs buffer layer is 5E17 atoms/cm³；Ga_0.5In_0.5The thickness of the P lower transition layer is 100nm, and the doping concentration is 5E18 atoms/cm³(ii) a n type Al_0.5In_0.5The thickness of the P lower limiting layer is 0.5um, and the doping concentration is 5E18 atoms/cm³；(Al_1-x3Ga_x3)_y1In_1-y1The P lower waveguide layer has a thickness of 50nm and is unintentionally doped with (Al)_0.9Ga_0.1)_0.5In_0.5P is gradually changed to (Al)_0.5Ga_0.5)_0.5In_0.5P; the active region is Ga_0.4In_0.6P quantum well, (Al)_0.6Ga_0.4)_0.5In_0.5P barrier layer and Ga_0.4In_0.6P quantum well with thickness of 5nm, 8nm and 5 nm; (Al)_1-x3Ga_x3)_y1In_1-y1The P upper waveguide layer has a thickness of 50nm, is not intentionally doped, and has a composition of (Al)_0.9Ga_0.1)_0.5In_0.5P is gradually changed to (Al)_0.5Ga_0.5)_0.5In_0.5P；(Al_0.9Ga_0.1)_0.6In_0.4The thickness of the P diffusion impervious layer is 15nm, and the P diffusion impervious layer is not intentionally doped; p type Al_0.5In_0.5The thickness of the P upper limiting layer 1 is 0.1um, and the doping concentration is3E17 atoms/cm³；Ga_0.5In_0.5The thickness of the P corrosion stop layer is 100nm, and the doping concentration is 1E18 atoms/cm³(ii) a P type Al_0.5In_0.5The thickness of the P upper limiting layer 2 is 0.5um, and the doping concentration is 3E17 atoms/cm³；Ga_0.5In_0.5The thickness of the transition layer on the P is 10nm, and the doping concentration is 1E18 atoms/cm³(ii) a The doping concentration of the GaAs cap layer is 4E19 atoms/cm³(ii) a The thickness was 0.1. mu.m. By inserting the tensile strain diffusion barrier layer, the band gap difference between the waveguide layer and the limiting layer is increased, the electronic leakage inhibition capability is increased, meanwhile, the diffusion coefficient of the P dopant In the In component low layer is small, the diffusion of the dopant to the active region is reduced, and the internal loss is reduced; by using the diffusion barrier layer, the electro-optic conversion efficiency is increased, the heat generation is reduced, and better high-temperature reliability can be obtained.

After the epitaxial layer is grown by using the MOCVD technology, the epitaxial wafer needs to be manufactured by a tube core process and a packaging process subsequently, and finally a device of the semiconductor laser is formed.

Example 2

The GaAs buffer layer grows from bottom to top in sequence, the thickness of the GaAs buffer layer is 100nm, and the doping concentration of the GaAs buffer layer is 5E18 atoms/cm³；Ga_0.5In_0.5The thickness of the P lower transition layer is 300nm, and the doping concentration is 5E17 atoms/cm³(ii) a n type Al_0.5In_0.5The thickness of the P lower limiting layer is 1.5um, and the doping concentration is 5E17 atoms/cm³；(Al_1-x3Ga_x3)_y1In_1-y1The P lower waveguide layer has a thickness of 150nm and is unintentionally doped with (Al)_0.95Ga_0.05)_0.5In_0.5P is gradually changed to (Al)_0.5Ga_0.5)_0.5In_0.5P; the active region is Ga_0.4In_0.6P quantum well, (Al)_0.6Ga_0.4)_0.5In_0.5P barrier layer and Ga_0.4In_0.6P quantum well with thickness of 5nm, 8nm and 5 nm; (Al)_1-x3Ga_x3)_y1In_1-y1The P upper waveguide layer has a thickness of 150nm and is unintentionally doped with (Al)_0.5Ga_0.5)_0.5In_0.5P is gradually changed to (Al)_0.95Ga_0.05)_0.5In_0.5P；(Al_0.95Ga_0.1)_0.6In_0.4The thickness of the P diffusion impervious layer is 5nm, and the P diffusion impervious layer is not intentionally doped; p type Al_0.5In_0.5The thickness of the P upper limiting layer 1 is 0.3um, and the doping concentration is 1E18 atoms/cm³；Ga_0.5In_0.5The thickness of the P corrosion stop layer is 50nm, and the doping concentration is 2E18 atoms/cm³(ii) a P type Al_0.5In_0.5The thickness of the P upper limiting layer 2 is 0.5um, and the doping concentration is 3E17 atoms/cm³；Ga_0.5In_0.5The thickness of the transition layer on the P is 10nm, and the doping concentration is 1E18 atoms/cm³(ii) a The doping concentration of the GaAs cap layer is 4E19 atoms/cm³(ii) a The thickness was 0.1. mu.m. By inserting the tensile strain diffusion barrier layer, the band gap difference between the waveguide layer and the limiting layer is increased, the electronic leakage inhibition capability is increased, meanwhile, the diffusion coefficient of the P dopant In the In component low layer is small, the diffusion of the dopant to the active region is reduced, and the internal loss is reduced; by using the diffusion barrier layer, the electro-optic conversion efficiency is increased, the heat generation is reduced, and better high-temperature reliability can be obtained.

After the epitaxial layer is grown by using the MOCVD technology, the epitaxial wafer needs to be manufactured by a tube core process and a packaging process subsequently, and finally a device of the semiconductor laser is formed.

Example 3

The GaAs buffer layer grows from bottom to top in sequence, the thickness of the GaAs buffer layer is 300nm, and the doping concentration of the GaAs buffer layer is 2E18 atoms/cm³；Ga_0.5In_0.5The thickness of the P lower transition layer is 200nm, and the doping concentration is 1E18 atoms/cm³(ii) a n type Al_0.5In_0.5The thickness of the P lower limiting layer is 1um, and the doping concentration is 1E18 atoms/cm³；(Al_1-x3Ga_x3)_y1In_1-y1The P lower waveguide layer has a thickness of 100nm and is formed by (Al) and unintentionally doped_0.9Ga_0.1)_0.5In_0.5P is gradually changed to (Al)_0.5Ga_0.5)_0.5In_0.5P; the active region is Ga_0.4In_0.6P quantum well, (Al)_0.6Ga_0.4)_0.5In_0.5P barrier layer and Ga_0.4In_0.6P quantum well with thickness of 5nm, 6nm and 5 nm; (Al)_1-x3Ga_x3)_y1In_1-y1The P upper waveguide layer has a thickness of 100nm and is formed by (Al) and unintentionally doped_0.5Ga_0.5)_0.5In_0.5P is gradually changed to (Al)_0.9Ga_0.1)_0.5In_0.5P；(Al_0.9Ga_0.1)_0.6In_0.4The thickness of the P diffusion impervious layer is 10nm, and the P diffusion impervious layer is not intentionally doped; p type Al_0.5In_0.5The thickness of the P upper limiting layer 1 is 0.18um, and the doping concentration is 5E17 atoms/cm³；Ga_0.5In_0.5The thickness of the P corrosion stop layer is 20nm, and the doping concentration is 7E17 atoms/cm³(ii) a P type Al_0.5In_0.5The thickness of the P upper limiting layer 2 is 0.8um, and the doping concentration is 7E17 atoms/cm³；Ga_0.5In_0.5The thickness of the transition layer on the P is 10nm, and the doping concentration is 3E18 atoms/cm³(ii) a The doping concentration of the GaAs cap layer is 5E19 atoms/cm³(ii) a The thickness was 0.3. mu.m. By inserting the tensile strain diffusion barrier layer, the band gap difference between the waveguide layer and the limiting layer is increased, the electronic leakage inhibition capability is increased, meanwhile, the diffusion coefficient of the P dopant In the In component low layer is small, the diffusion of the dopant to the active region is reduced, and the internal loss is reduced; by using the diffusion barrier layer, the electro-optic conversion efficiency is increased, the heat generation is reduced, and better high-temperature reliability can be obtained.

After the epitaxial layer is grown by using the MOCVD technology, the epitaxial wafer needs to be manufactured by a tube core process and a packaging process subsequently, and finally a device of the semiconductor laser is formed.

The foregoing is only a preferred embodiment of the present invention, and it will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the principle of the invention, and such modifications and improvements are also considered to be within the scope of the invention.