阅读说明：本技术 一种808nm半导体激光夜视光源发射装置 (808nm semiconductor laser night vision light source transmitting device ) 是由 李再金 赵志斌 陈浩 杨云帆 袁毅 杨隆杰 李林 乔忠良 曾丽娜 曲轶 于 2021-01-26 设计创作，主要内容包括：本发明公开了一种808nm半导体激光夜视光源发射装置,包括808nm快慢轴准直半导体激光阵列模块(1)、空心梯型圆台(2)、凹透镜(3)、凸透镜(4)。空心梯型圆台(2)包括圆台上底面(2-1)、圆台外侧面(2-2)、圆台下底面(2-3)和圆台内侧面(2-4)。808nm快慢轴准直半导体激光阵列模块(1)垂直入射到圆台下底面(2-3)上,在圆台外侧面(2-2)和圆台内侧面(2-4)发生全反射,经过圆台上底面(2-1)入射到凹透镜(3)和凸透镜(4),输出808nm半导体激光夜视光源。(The invention discloses a 808nm semiconductor laser night vision light source emitting device which comprises a 808nm fast and slow axis collimation semiconductor laser array module (1), a hollow trapezoid round table (2), a concave lens (3) and a convex lens (4). The hollow trapezoidal round table (2) comprises an upper round table bottom surface (2-1), an outer round table side surface (2-2), a lower round table bottom surface (2-3) and an inner round table side surface (2-4). The 808nm fast-slow axis collimation semiconductor laser array module (1) is vertically incident on the lower bottom surface (2-3) of the circular truncated cone, is totally reflected on the outer side surface (2-2) and the inner side surface (2-4) of the circular truncated cone, is incident on the concave lens (3) and the convex lens (4) through the upper bottom surface (2-1) of the circular truncated cone, and outputs a 808nm semiconductor laser night vision light source.)

1. A808 nm semiconductor laser night vision light source emitting device is characterized by comprising a 808nm fast and slow axis collimation semiconductor laser array module (1), a hollow trapezoid round table (2), a concave lens (3) and a convex lens (4);the hollow trapezoidal round table (2) comprises a round table upper bottom surface (2-1), a round table outer side surface (2-2), a round table lower bottom surface (2-3) and a round table inner side surface (2-4); the outer side surface (2-2) of the circular truncated cone and the lower bottom surface (2-3) of the circular truncated cone form an angle of 45 degrees; the inner side surface (2-4) of the circular truncated cone and the lower bottom surface (2-3) of the circular truncated cone form an angle of 135 degrees; the upper bottom surface (2-1) and the lower bottom surface (2-3) of the circular truncated cone are plated with 181nm TiO₂/96nm SiO₂/156nm TiO₂/94nm SiO₂The optical film of (1); the front and back surfaces of the concave lens (3) are plated with 181nm TiO₂/96nm SiO₂/156nm TiO₂/94nm SiO₂The optical film of (1); the front and back surfaces of the convex lens (4) are plated with 181nm TiO₂/96nm SiO₂/156nm TiO₂/94nm SiO₂The optical film of (1).

Technical Field

The invention relates to the technical field of laser night vision imaging, in particular to a 808nm semiconductor laser night vision light source transmitting device.

Background

Laser night vision technology has been widely used in the field of surveillance and monitoring, but currently, clear imaging over long distances cannot be achieved. The edge-emitting semiconductor laser has the advantages of small volume, light weight, high photoelectric conversion and the like, and is widely applied to the fields of industry, agriculture, medical treatment, military and the like. Semiconductor laser cannot be directly used for a long-distance laser night vision monitoring light source due to the defects of large light-emitting divergence angle, elliptic Gaussian beam formation, poor light quality and the like. In order to obtain high laser night vision imaging quality in a long distance, a 808nm semiconductor laser night vision light source transmitting device is provided, and the monitoring distance of a laser night vision imaging system can be effectively increased.

Disclosure of Invention

The invention aims to provide a 808nm semiconductor laser night vision light source emitting device.

A808 nm semiconductor laser night vision light source emitting device comprises a 808nm fast and slow axis collimation semiconductor laser array module (1), a hollow trapezoid round table (2), a concave lens (3) and a convex lens (4).

The method is characterized in that:

the 808nm fast and slow axis collimation semiconductor laser array module (1) comprises eight 808nm fast and slow axis collimation semiconductor laser array modules, and the length of each module can be adjusted according to the hollow size in the middle of the hollow trapezoidal round table (2).

The hollow trapezoidal round table (2) comprises an upper round table bottom surface (2-1), an outer round table side surface (2-2), a lower round table bottom surface (2-3) and an inner round table side surface (2-4). The outer side surface (2-2) of the circular truncated cone and the lower bottom surface (2-3) of the circular truncated cone form an angle of 45 degrees, the inner side surface (2-4) of the circular truncated cone and the lower bottom surface (2-3) of the circular truncated cone form an angle of 135 degrees, and the upper bottom surface (2-1) of the circular truncated cone and the lower bottom surface (2-3) of the circular truncated cone are plated with 181nm TiO₂/96nm SiO₂/156nm TiO₂/94nm SiO₂The optical film of (1).

The front and back surfaces of the concave lens (6) are plated with 181nm TiO₂/96nm SiO₂/156nm TiO₂/94nm SiO₂The optical film of (1).

The front and back surfaces of the convex lens (7) are plated with 181nm TiO₂/96nm SiO₂/156nm TiO₂/94nm SiO₂The optical film of (1).

Drawings

FIG. 1 is a diagram of an apparatus according to an embodiment of the present invention.

Fig. 2 is a cross-sectional optical path diagram of the hollow trapezoidal circular truncated cone (2).

Detailed Description

The present invention is described in further detail below with reference to fig. 1 and 2.

The invention discloses a 808nm semiconductor laser night vision light source emitting device which comprises eight 808nm fast and slow axis collimation semiconductor laser array modules (1), a hollow trapezoidal round table (2), a concave lens (3) and a convex lens (4).

The hollow trapezoidal round table (2) comprises an upper round table bottom surface (2-1), an outer round table side surface (2-2), a lower round table bottom surface (2-3) and an inner round table side surface (2-4).

Each 808nm fast-slow axis collimation semiconductor laser array module of the eight 808nm fast-slow axis collimation semiconductor laser array modules (1) vertically irradiates on the lower bottom surface (2-3) of the hollow trapezoidal circular truncated cone (2), the outer side surface (2-2) of the hollow trapezoidal circular truncated cone (2) is totally reflected, the totally reflected light beam is totally reflected through the inner side surface (2-4) of the hollow trapezoidal circular truncated cone (2), and then is output through the upper bottom surface (2-1) of the hollow trapezoidal circular truncated cone (2). The eight output light beams pass through the concave lens (3) and the convex lens (4) to realize the 808nm semiconductor laser night vision light source emitting device.