阅读说明：本技术 一种940nm半导体激光夜视成像光源装置 (940nm semiconductor laser night vision imaging light source device ) 是由 李再金 袁毅 杨云帆 杨隆杰 赵志斌 陈浩 李林 乔忠良 曾丽娜 曲轶 于 2021-01-26 设计创作，主要内容包括：本发明公开了一种940nm半导体激光夜视成像光源装置,包括第一个940nm半导体激光阵列模块(1)、第二个940nm半导体激光阵列模块(2)、第一组准直镜(3)、第二组准直镜(4)、V型棱镜(5)、凹透镜(6)、凸透镜(7)。V型棱镜(5)包括上底面(5-1)、第一下底面(5-2)、第二下底面(5-3)、第一外侧腰面(5-4)、第二外侧腰面(5-5)、第一内侧腰面(5-6)和第二内侧腰面(5-7)。940nm半导体激光阵列模块(1)和(2)分别经过准直镜(3)和(4)通过V型棱镜(5)两次全反射后再通过凹透镜(6)和凸透镜(7),实现940nm半导体激光激光夜视成像光源输出。(The invention discloses a 940nm semiconductor laser night vision imaging light source device which comprises a first 940nm semiconductor laser array module (1), a second 940nm semiconductor laser array module (2), a first group of collimating lenses (3), a second group of collimating lenses (4), a V-shaped prism (5), a concave lens (6) and a convex lens (7). The V-shaped prism (5) comprises an upper bottom surface (5-1), a first lower bottom surface (5-2), a second lower bottom surface (5-3), a first outer waist surface (5-4), a second outer waist surface (5-5), a first inner waist surface (5-6) and a second inner waist surface (5-7). 940nm semiconductor laser array modules (1) and (2) are totally reflected twice through collimating lenses (3) and (4) and a V-shaped prism (5) respectively and then pass through a concave lens (6) and a convex lens (7), and output of 940nm semiconductor laser night vision imaging light sources is achieved.)

1. A940 nm semiconductor laser night vision imaging light source device is characterized by comprising: the device comprises a first 940nm semiconductor laser array module (1), a second 940nm semiconductor laser array module (2), a first group of collimating lenses (3), a second group of collimating lenses (4), a V-shaped prism (5), a concave lens (6) and a convex lens (7); the front and back surfaces of the first group of collimating mirrors (3) are coated with 212nm TiO₂/112nm SiO₂/183nm TiO₂/109nm SiO₂The optical film of (1); a second group of collimating mirrors (4), the front and back surfaces of which are coated with 212nm TiO₂/112nm SiO₂/183nm TiO₂/109nm SiO₂The optical film of (1); the V-shaped prism (5) comprises an upper bottom surface (5-1), a first lower bottom surface (5-2), a second lower bottom surface (5-3) and a firstAn outer waist surface (5-4), a second outer waist surface (5-5), a first inner waist surface (5-6) and a second inner waist surface (5-7), wherein the first outer waist surface (5-4) and the first lower bottom surface (5-2) form an angle of 45 degrees, the first inner waist surface (5-6) and the first lower bottom surface (5-2) form an angle of 135 degrees, the second outer waist surface (5-5) and the second lower bottom surface (5-3) form an angle of 45 degrees, the second inner waist surface (5-7) and the second lower bottom surface (5-3) form an angle of 135 degrees, and the upper bottom surface (5-1), the first lower bottom surface (5-2) and the second lower bottom surface (5-3) are all plated with 212nm TiO 3₂/112nm SiO₂/183nm TiO₂/ 109nm SiO₂The optical film of (1); the front and back surfaces of the concave lens (6) are plated with 212nm TiO₂/112nm SiO₂/183nm TiO₂/109nm SiO₂The optical film of (1); the front and back surfaces of the convex lens (7) are plated with 212nm TiO₂/112nm SiO₂/183nm TiO₂/109nm SiO₂The optical film of (1).

Technical Field

The invention relates to the technical field of laser night vision imaging, in particular to a 940nm semiconductor laser night vision imaging light source device.

Background

The laser night vision imaging technology is widely applied to the field of laser night vision, but long-distance clear imaging cannot be realized at present. The edge-emitting semiconductor laser has the advantages of small size, light weight, high photoelectric conversion and the like, and is widely applied to various fields in the market. Semiconductor laser cannot be used for a long-distance laser night vision imaging light source due to the defects of large light-emitting divergence angle, elliptic Gaussian beam formation, poor light quality and the like. In order to obtain high laser night vision imaging quality in a long distance, a 940nm semiconductor laser night vision imaging light source device is provided, and the illumination distance of a laser night vision imaging system can be effectively increased.

Disclosure of Invention

The invention aims to provide a 940nm semiconductor laser night vision imaging light source device.

A940 nm semiconductor laser night vision imaging light source device comprises a first 940nm semiconductor laser array module (1), a second 940nm semiconductor laser array module (2), a first group of collimating lenses (3), a second group of collimating lenses (4), a V-shaped prism (5), a concave lens (6) and a convex lens (7).

The method is characterized in that:

the first 940nm semiconductor laser array module (1) comprises 5 bars with the length of 20 cm, and each bar emits 940nm semiconductor laser wavelength.

A second 940nm semiconductor laser array module (2) comprising 5 bars of 20 cm length each emitting a semiconductor laser wavelength of 940 nm.

The front and back surfaces of the first group of collimating mirrors (3) are coated with 212nm TiO₂/112nm SiO₂/183nm TiO₂/109nm SiO₂The optical film of (1).

A second group of collimating mirrors (4), the front and back surfaces of which are coated with 212nm TiO₂/112nm SiO₂/183nm TiO₂/109nm SiO₂The optical film of (1). The V-shaped prism (5) comprises an upper bottom surface (5-1), a first lower bottom surface (5-2), a second lower bottom surface (5-3), a first outer waist surface (5-4), a second outer waist surface (5-5), a first inner waist surface (5-6) and a second inner waist surface (5-7). The first outer side waist surface (5-4) and the first lower bottom surface (5-2) form an angle of 45 degrees, the first inner side waist surface (5-6) and the first lower bottom surface (5-2) form an angle of 135 degrees, the second outer side waist surface (5-5) and the second lower bottom surface (5-3) form an angle of 45 degrees, the second inner side waist surface (5-7) and the second lower bottom surface (5-3) form an angle of 135 degrees, the upper bottom surface (5-1), the first lower bottom surface (5-2) and the second lower bottom surface (5-3) are plated with 212nm TiO₂/112nm SiO₂/183nm TiO₂/ 109nm SiO₂The optical film of (1).

The front and back surfaces of the concave lens (6) are plated with 212nm TiO₂/112nm SiO₂/183nm TiO₂/109nm SiO₂The optical film of (1).

The front and back surfaces of the convex lens (7) are plated with 212nm TiO₂/112nm SiO₂/183nm TiO₂/109nm SiO₂The optical film of (1).

Drawings

FIG. 1 is a diagram of an apparatus according to an embodiment of the present invention.

Fig. 2 is a structural view of the V-prism.

Detailed Description

The present invention is described in further detail below with reference to fig. 1 and 2.

The invention discloses a 940nm semiconductor laser night vision imaging light source device which comprises a first 940nm semiconductor laser array module (1), a second 940nm semiconductor laser array module (2), a first group of collimating lenses (3), a second group of collimating lenses (4), a V-shaped prism (5), a concave lens (6) and a convex lens (7).

The V-shaped prism (5) comprises an upper bottom surface (5-1), a first lower bottom surface (5-2), a second lower bottom surface (5-3), a first outer waist surface (5-4), a second outer waist surface (5-5), a first inner waist surface (5-6) and a second inner waist surface (5-7).

Each bar light beam of the semiconductor laser of the first 940nm semiconductor laser array module (1) passes through the first group of collimating mirrors (3), is collimated and then vertically incident on the first lower bottom surface (5-2) of the V-shaped prism (5), is totally reflected on the first outer side waist surface (5-4) of the V-shaped prism (5), is totally reflected through the first inner side waist surface (5-6) of the V-shaped prism (5), and then outputs a first part of light beam through the upper bottom surface (5-1) of the V-shaped prism (5).

Each bar light beam of the semiconductor laser of the second 940nm semiconductor laser array module (2) passes through the second group of collimating mirrors (4), is collimated and then vertically incident on the second lower bottom surface (5-3) of the V-shaped prism (5), is totally reflected on the second outer side waist surface (5-5) of the V-shaped prism (5), is totally reflected through the second inner side waist surface (5-7) of the V-shaped prism (5), and then outputs a second part of light beam through the upper bottom surface (5-1) of the V-shaped prism (5).

The output of the 940nm semiconductor laser night vision imaging light source is realized by the first partial light beam and the second partial light beam through the concave lens (6) and the convex lens (7).