阅读说明：本技术 电弧离子镀膜装置 (Arc ion coating device ) 是由 刘威 冯森 蹤雪梅 于 2020-09-04 设计创作，主要内容包括：本发明涉及电弧离子镀技术领域,特别涉及一种电弧离子镀膜装置。本发明的电弧离子镀膜装置,包括：基体支架,用于支撑基体；电弧源,包括阴极靶,阴极靶用于释放等离子体,以为基体镀膜；和辅助阳极,设置于阴极靶与基体支架之间,辅助阳极内设有允许阴极靶所释放等离子体通过的通道,且辅助阳极与阴极靶之间形成电场,辅助阳极和阴极靶分别与电源的正极和负极电连接。基于此,可减少大颗粒在膜层上的沉积,从而有效改善膜层质量。(The invention relates to the technical field of arc ion plating, in particular to an arc ion plating device. The arc ion plating apparatus of the present invention includes: a substrate support for supporting a substrate; an arc source including a cathode target for releasing plasma to coat the substrate; and the auxiliary anode is arranged between the cathode target and the substrate bracket, a channel allowing plasma released by the cathode target to pass through is arranged in the auxiliary anode, an electric field is formed between the auxiliary anode and the cathode target, and the auxiliary anode and the cathode target are respectively and electrically connected with the anode and the cathode of the power supply. Therefore, deposition of large particles on the film layer can be reduced, and the quality of the film layer is effectively improved.)

1. An arc ion plating apparatus (100), comprising:

a base support (2) for supporting a base (21);

an arc source (3) comprising a cathode target (31), said cathode target (31) being adapted to release a plasma (7) for coating said substrate (21); and

the auxiliary anode (4) is arranged between the cathode target (31) and the substrate support (2), a channel (43) allowing the plasma (7) released by the cathode target (31) to pass through is arranged in the auxiliary anode (4), an electric field is formed between the auxiliary anode (4) and the cathode target (31), and the auxiliary anode (4) and the cathode target (31) are respectively and electrically connected with the positive electrode and the negative electrode of a power supply (51).

2. The arc ion plating apparatus (100) of claim 1, wherein the auxiliary anode (4) comprises a body portion (41), wherein the body portion (41) is disposed around the channel (43), and wherein the body portion (41) has a discontinuous surface.

3. The arc ion plating apparatus (100) of claim 2, wherein the body portion (41) comprises at least two rods (411), the at least two rods (411) being spaced apart along a circumference of the channel (43).

4. The arc ion plating apparatus (100) of claim 3, wherein the at least two rods (411) are uniformly arranged along a circumferential direction of the passage (43).

5. The arc ion plating apparatus (100) according to claim 2, wherein the auxiliary anode (4) further comprises a support portion (42), the support portion (42) supporting the body portion (41).

6. The arc ion plating apparatus (100) according to claim 5, wherein the support portion (42) includes a first support ring (421) and a second support ring (422), the first support ring (421) and the second support ring (422) being arranged in this order in a direction from the base support (2) to the cathode target (31), the body portion (41) being connected between the first support ring (421) and the second support ring (422).

7. The arc ion plating apparatus (100) of claim 6, wherein the auxiliary anode (4) is electrically connected to the positive electrode of the power supply (51) through the first support ring (421); and/or the auxiliary anode (4) is connected with the vacuum cavity (1) of the arc ion plating device (100) through the first supporting ring (421).

8. The arc ion plating apparatus (100) of claim 6, wherein the first support ring (421) has a larger ring diameter than the second support ring (422).

9. The arc ion plating apparatus (100) according to claim 1, wherein the distance between the auxiliary anode (4) and the surface of the cathode target (31) facing the substrate holder (2) is 50 mm.

10. The arc ion plating apparatus (100) of any of claims 1 to 9, wherein the auxiliary anode (4) is arranged coaxially with the cathode target (31).

11. The arc ion plating apparatus (100) according to any one of claims 1 to 9, wherein the arc ion plating apparatus (100) further comprises a substrate biasing device (6), the substrate biasing device (6) being electrically connected to the substrate holder (2) for biasing the substrate (21).

12. The arc ion plating apparatus (100) of claim 11, wherein the substrate biasing means (6) comprises a substrate pulse biasing means (61), and the substrate pulse biasing means (61) is configured to apply a pulse bias to the substrate (21).

Technical Field

The invention relates to the technical field of arc ion plating, in particular to an arc ion plating device.

Background

As one of the physical vapor deposition technologies, the arc ion plating technology is an advanced vacuum coating technology, which is based on the arc discharge principle, and arcs on the surface of a cathode target of an arc source locally, so that the micro-area of the cathode target is melted and ionized, plasma is released, and the released plasma bombards the surface of a substrate under the action of bias voltage and grows into a film. The arc ion plating technology is widely applied to the machining industries such as decoration plating industry and cutter film, because the arc ion plating technology has the advantages of simple structure, high ionization rate of the cathode target, good diffraction performance, high density of the prepared film layer, random placement of an arc source in the plating process and the like.

However, the arc ion plating technology in the related technology is easy to have the problem of pollution caused by large molten liquid drops, and the deposition of large particles causes serious reduction of the quality of a film layer, so that the application of the technology on high-quality, especially nano-scale films is seriously limited.

Disclosure of Invention

The invention aims to solve the technical problems that: improve the quality of the film layer.

In order to solve the above technical problems, the present invention provides an arc ion plating apparatus, comprising:

a substrate support for supporting a substrate;

an arc source including a cathode target for releasing plasma to coat the substrate; and

and the auxiliary anode is arranged between the cathode target and the substrate support, a channel allowing plasma released by the cathode target to pass through is arranged in the auxiliary anode, an electric field is formed between the auxiliary anode and the cathode target, and the auxiliary anode and the cathode target are respectively and electrically connected with the anode and the cathode of the power supply.

In some embodiments, the auxiliary anode includes a body portion surrounding the channel, the body portion having a discontinuous surface.

In some embodiments, the body portion comprises at least two rods, the at least two rods being spaced apart along the circumference of the channel.

In some embodiments, the at least two rods are uniformly arranged along the circumference of the channel.

In some embodiments, the auxiliary anode further comprises a support portion supporting the body portion.

In some embodiments, the support part includes a first support ring and a second support ring, which are sequentially arranged in a direction from the substrate holder to the cathode target, and the body part is connected between the first support ring and the second support ring.

In some embodiments, the auxiliary anode is electrically connected to the positive pole of the power supply through the first support ring; and/or the auxiliary anode is connected with the vacuum cavity of the arc ion coating device through the first support ring.

In some embodiments, the first support ring has a larger ring diameter than the second support ring.

In some embodiments, the distance between the auxiliary anode and the surface of the cathode target facing the substrate holder is 50 mm.

In some embodiments, the auxiliary anode is arranged coaxially with the cathode target.

In some embodiments, the arc ion plating apparatus further comprises a substrate biasing device electrically connected to the substrate support for biasing the substrate.

In some embodiments, the substrate biasing device comprises a substrate pulsing biasing device for applying a pulsing bias to the substrate.

Through add the auxiliary anode of loading positive potential in arc ion coating device, utilize the electric field between auxiliary anode and the cathode target, make the large granule electronegative to the deposit can effectively filter the large granule on auxiliary anode, reduces the deposit of large granule on the rete, thereby effectively improves the rete quality.

Other features of the present invention and advantages thereof will become apparent from the following detailed description of exemplary embodiments thereof, which proceeds with reference to the accompanying drawings.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.

FIG. 1 is a schematic view of an arc ion plating apparatus according to some embodiments of the present invention.

Fig. 2 is a perspective view of the auxiliary anode of fig. 1.

In the figure:

100. an arc ion plating device;

1. a vacuum chamber; 11. a vacuum chamber;

2. a substrate holder; 21. a substrate; 22. coating;

3. an arc source; 31. a cathode target; 32. an arc striking pole; 33. a cathode target holder;

4. an auxiliary anode; 41. a body portion; 42. a support portion; 43. a channel; 411. a rod member; 421. a first support ring; 422. a second support ring; 423. connecting holes;

51. a power source; 52. a wire; 53. an insulating member;

6. a substrate biasing device; 61. a substrate pulse bias device; 611. a bias power supply;

7. plasma; 71. large particles.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without any inventive step, are within the scope of the present invention.

Techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate.

In the description of the present invention, it is to be understood that the orientation or positional relationship indicated by the orientation words such as "front, rear, upper, lower, left, right", "lateral, vertical, horizontal" and "top, bottom", etc. are usually based on the orientation or positional relationship shown in the drawings, and are only for convenience of description and simplicity of description, and in the case of not making a reverse description, these orientation words do not indicate and imply that the device or element being referred to must have a specific orientation or be constructed and operated in a specific orientation, and therefore, should not be considered as limiting the scope of the present invention; the terms "inner and outer" refer to the inner and outer relative to the profile of the respective component itself.

In the description of the present invention, it should be understood that the terms "first", "second", etc. are used to define the components, and are used only for the convenience of distinguishing the corresponding components, and if not otherwise stated, the terms have no special meaning, and thus, should not be construed as limiting the scope of the present invention.

In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.

Fig. 1 to 2 exemplarily show the structure of the arc ion plating apparatus of the present invention.

Referring to fig. 1, the arc ion plating apparatus 100 includes a vacuum chamber 1, a substrate holder 2, an arc source 3, and the like.

The vacuum chamber 11 is arranged in the vacuum cavity 1 and provides a vacuum environment for the arc ion plating process. In some embodiments, the arc ion plating apparatus 100 further includes a vacuum pumping device (not shown) in communication with the vacuum chamber 11 for pumping vacuum to the vacuum chamber 11 so that a vacuum environment is formed in the vacuum chamber 11.

The substrate holder 2 is connected to the vacuum chamber 1 and supports the substrate 21. The substrate 21 is a workpiece to be coated. Referring to FIG. 1, in some embodiments, a first end of the substrate support 2 is inserted into the vacuum chamber 11 while a second end of the substrate support 2, opposite the first end, is located outside the vacuum chamber 11. The substrate 21 is arranged at a first end of the substrate holder 2 such that the substrate 21 is located in the vacuum chamber 11. The second end of the substrate holder 2 is electrically connected to a substrate biasing means 6. The substrate biasing device 6 comprises a biasing power source 611, and the negative electrode and the positive electrode of the biasing power source 611 are electrically connected to the second end of the substrate holder 2 and the vacuum chamber 1, respectively, for biasing the substrate 2. And, be equipped with insulating part 53 between the first end of base member support 2 and vacuum chamber 1, insulating part 53 realizes the insulation between base member support 2 first end and vacuum chamber 1.

The arc source 3 is connected with the vacuum cavity 1 and is used for coating the substrate 21 based on the arc discharge principle. Referring to fig. 1, in some embodiments, the arc source 3 includes a cathode target 31 and an arc ignition electrode 32. A cathode target 31 is located in the vacuum chamber 11 and serves as a plasma source for discharging the plasma 7 to coat the substrate 21. The arc ignition electrode 32 is detachably combined with the cathode target 31 for controlling whether the cathode target 31 discharges the plasma 7. The cathode target 31 and the arc striking electrode 32 are electrically connected to the negative electrode and the positive electrode of the power supply 51, respectively. When the arc striking electrode 32 contacts the cathode target 31, the circuit between the cathode target 31 and the arc striking electrode 32 is conducted, a large current is generated instantaneously, micro-area arc emission on the surface of the cathode target 31 is triggered, an arc spot is formed, the corresponding area of the cathode target 31 is instantaneously evaporated and ionized, and the plasma 7 including electrons, ions and neutral atoms is excited. The excited plasma 7 bombards the surface of the substrate 21 under the action of the substrate bias device 6, and deposits on the surface of the substrate 21 to form a coating 22, thereby realizing the coating process. The arrow I in fig. 1 indicates the overall direction of movement of the plasma 7, which is in the direction from the cathode target 31 to the substrate holder 2.

In some embodiments, as shown in fig. 1, the arc ignition electrode 32 is detachably in contact with the surface of the cathode target 31 facing the substrate 21. At this time, the surface of the cathode target 31 facing the substrate 21 is an excitation surface, and the plasma 7 is excited by the surface and moves toward the substrate 21 to bombard the substrate 21.

With continued reference to fig. 1, in some embodiments, the cathode target 31 is supported in the vacuum chamber 11 by a cathode target support 33 and is electrically connected to the negative pole of the power supply 51 through the cathode target support 33. The arc ignition electrode 32 is disposed in the vacuum chamber 11 and is electrically connected to the positive electrode of the power supply 51 via a conductive member such as a wire 52. One end of the cathode target holder 33 extends into the vacuum chamber 11, and the other end is exposed outside the vacuum chamber 11. And an insulating member 53 is arranged between the cathode target holder 33 and the vacuum chamber 1, and the insulating member 53 realizes insulation between the cathode target holder 33 and the vacuum chamber 1. In addition, an insulating member 53 is provided between a conductive member such as a lead wire 52 electrically connecting the positive electrode of the power supply 51 and the arc ignition electrode 32 and the vacuum chamber 1, and the insulating member 53 insulates between the conductive member such as the cathode target holder 33 and the lead wire 52 and the vacuum chamber 1, so that the cathode target holder 33 and the arc ignition electrode 32 are insulated from the vacuum chamber 1.

In order to make the released plasma 7 bombard the substrate 21 more fully, as shown in fig. 1, in some embodiments, the cathode target holder 33 and the substrate holder 2 are disposed on the side walls of the vacuum chamber 1 on opposite sides thereof, and the cathode target holder 33 and the substrate holder 2 are disposed substantially coaxially, so that the cathode target 31 and the substrate 21 can be disposed opposite to each other, so that the plasma 7 released from the cathode target 31 can bombard the substrate 21 more fully and efficiently, and the coating efficiency can be improved.

As mentioned in the background section, in the related art, during the arc ion plating process, large molten droplets are generated to form large particles 71, and the large particles 71 are deposited on the surface of the substrate 21, which affects the quality of the film layer and limits the application of the arc ion plating technique to high quality film layers, especially nano-scale film layers.

To mitigate the large particle contamination problem, referring to FIG. 1, in some embodiments of the present invention, the arc ion plating apparatus 100 further comprises an auxiliary anode 4. The auxiliary anode 4 is disposed between the cathode target 31 and the substrate holder 2. The auxiliary anode 4 is provided with a passage 43 for allowing the plasma 7 discharged from the cathode target 31 to pass therethrough. Meanwhile, an electric field is formed between the auxiliary anode 4 and the cathode target 31, and the auxiliary anode 4 and the cathode target 31 are electrically connected to the positive electrode and the negative electrode of the power supply 51, respectively. The power source 51 electrically connected to the auxiliary anode 4 may be the same power source as the power source 51 electrically connected to the arc ignition electrode 32, or two different power sources. And the loading mode of the power supply 51 to the auxiliary anode 4 can be a direct current loading mode or a pulse loading mode.

By adding the auxiliary anode 4 at the downstream of the cathode target 31 (i.e. at the side of the cathode target 31 close to the substrate 21) and applying a positive potential higher than that of the arc source 3 to the auxiliary anode 4, an electric field can be formed in the moving path of the plasma 7 excited by the cathode target 31, the arc discharge of the cathode target 31 is assisted, and the film quality is improved.

On the one hand, the electric field between the auxiliary anode 4 and the cathode target 31 can accelerate the thermal movement rate of electrons, so that the electrons can be rapidly accumulated on the surface of the large particles 71, the large particles 71 are negatively charged, the negatively charged large particles 71 are attracted to the auxiliary anode 4, the effect of filtering the large particles 71 is achieved, the number of the large particles 71 moving to the surface of the base body 21 is reduced, the deposition of the large particles 71 on the base body 21 is reduced, the pollution of the large particles 71 on the coating 22 is reduced, the improvement of the film quality is facilitated, and a foundation is provided for the application of the arc ion plating technology on higher-quality film layers such as a nano-scale film layer.

On the other hand, the electric field between the auxiliary anode 4 and the cathode target 31 can also strengthen the field electron emission effect, accelerate the electron movement, guide the arc spots to be uniformly distributed, improve the integral ionization rate, and contribute to the improvement of the film quality.

Under the action of an electric field between the auxiliary anode 4 and the cathode target 31, more ions in the plasma 7 emitted from the surface of the cathode target 31 can return to the surface of the cathode target 31 again to bombard the surface of the cathode target 31, so that the energy of the plasma 7 bombarding the cathode target 31 is stronger, the uniform distribution of arc spots on the surface of the cathode target 31 is promoted, the excitation continuity of the plasma 7 is effectively enhanced, the formation of large particles 71 is reduced, and the quality of a film layer is improved.

Meanwhile, under the action of the electric field between the auxiliary anode 4 and the cathode target 31, electrons in the excited plasma 7 can be accelerated, the collision ionization effect on neutral atoms in the excited plasma 7 is strengthened, the neutral atoms are further ionized, the overall ionization rate is effectively improved, and the film quality is improved.

It can be seen that the added auxiliary anode 4, which forms an electric field with the cathode target 31 and has a positive potential, can effectively improve the film quality by reducing the formation of large particles 71, filtering the large particles 71, and accelerating the plasma 7.

In addition, the added auxiliary anode 4 does not influence the loading of the matrix biasing device 6, and can further reduce the deposition quantity of large particles 71 on the surface of the film layer and further improve the quality of the film layer by matching with the matrix biasing device 6. For example, referring to FIG. 1, in some embodiments, the substrate biasing device 6 comprises a substrate pulse biasing device 61, the substrate pulse biasing device 61 being configured to apply a pulsed bias to the substrate 21. Therefore, a continuously-surging sheath layer can be formed on the surface of the substrate 21, the rejection capability of the large particles 71 is enhanced, and the deposition of the large particles 71 is further reduced, so that the film quality is more effectively improved together with the auxiliary anode 4. Wherein, when the substrate bias device 6 comprises the substrate pulse bias device 61, the bias power 611 comprises a pulse bias power (not shown). The positive pole and the negative pole of the pulse bias power supply are respectively and electrically connected with the substrate bracket 2 and the vacuum cavity 1.

As an implementation of the auxiliary anode 4, referring to fig. 1 and 2, in some embodiments, the auxiliary anode 4 includes a body portion 41. The body portion 41 surrounds the channel 43. In this way, the body portion 41 forms a side wall of the channel 43 so that negatively charged large particles 71 can be attracted to deposit on the body portion 41.

Wherein the body portion 41 may have a continuous surface, for example, the body portion 41 may be a continuous cylindrical side surface. Alternatively, the body portion 41 may have a discontinuous surface. For example, referring to fig. 1 and 2, in some embodiments, the body portion 41 includes at least two rods 411, the at least two rods 411 being spaced apart along the circumference of the channel 43. At this time, the body portion 41 has a discontinuous surface with a space between the adjacent two bars 411.

When the main body part 41 has a discontinuous surface, it is more advantageous to reduce large particle contamination, compared to the case where the main body part 41 has a continuous surface. Because, in the case that the main body portion 41 has a discontinuous surface, the large particles 71 can pass through a gap (for example, a gap between two adjacent rods 411) of the discontinuous surface of the main body portion 41 during the process of passing through the auxiliary anode 4, which can reduce the risk that the large particles 71 continue to move towards the substrate 21 due to the impact of the main body portion 41, thereby reducing the deposition of the large particles 71 on the substrate 21 and further improving the coating quality.

In the above embodiment, at least two rods 411 may be provided to be uniformly arranged along the circumferential direction of the passage 43. For example, in some embodiments, the plurality of rods 411 are evenly distributed along the circumference of the channel 43.

The rods 41 are uniformly arranged along the circumferential direction of the channel 43, which is beneficial to establishing a more uniform electric field on the surface of the cathode target 31, so that the quality of the coated film is more effectively improved by guiding arc spots to be more uniformly distributed and the like.

In addition, to improve the uniformity of the electric field established by the auxiliary anode 4 at the surface of the cathode target 31, referring to fig. 1, in some embodiments, the axis of the channel 43 is collinear with the axis of the cathode target 31. At this time, the auxiliary anode 4 is coaxially arranged with the cathode target 31, and the auxiliary anode 4 can establish a relatively uniform electric field on the surface of the cathode target 31, so that the film quality can be more effectively improved.

When the rods 41 are uniformly arranged along the circumferential direction of the channel 43 and the auxiliary anode 4 and the cathode target 31 are coaxially arranged, a columnar electric field with more uniform distribution can be formed between the auxiliary anode 4 and the cathode target 31, and the improvement effect on the quality of the film layer is better.

In addition, referring to fig. 1-2, in addition to including the body portion 41, in some embodiments, the auxiliary anode 4 further includes a support portion 42, the support portion 42 supporting the body portion 41. The body portion 41 and the supporting portion 42 may be connected by welding or the like.

The support portion 42 is further provided on the main body portion 41 to support the main body portion 41, which is advantageous for improving the structural stability of the auxiliary anode 4.

In addition, the support portion 42 is further provided on the main body portion 41, which facilitates the mounting and fixing of the main body portion 41, particularly the main body portion 41 having a discontinuous surface, and the electrical connection with the positive electrode of the power supply 51.

For example, in some embodiments, the supporting portion 42 connects the vacuum chamber 1 and the body portion 41, so that the body portion 41 is connected to the vacuum chamber 1 through the supporting portion 42, and the body portion 41 is fixed on the vacuum chamber 1.

For another example, in some embodiments, the supporting portion 42 electrically connects the main body portion 41 and the positive electrode of the power supply 51. The main body 41 is electrically connected to the positive electrode of the power supply 51 via the support portion 42, and the main body 41 is electrically connected to the positive electrode of the power supply 51.

Specifically, referring to fig. 1 to 2, in some embodiments, the support portion 42 includes a first support ring 421 and a second support ring 422, the first support ring 421 and the second support ring 422 being sequentially arranged in a direction from the substrate holder 2 to the cathode target 31, the body portion 41 being connected between the first support ring 421 and the second support ring 422. The auxiliary anode 4 is electrically connected to the positive electrode of the power supply 51 through the first support ring 421. Meanwhile, the auxiliary anode 4 is connected to the vacuum chamber 1 through the first support ring 421.

The first support ring 421 and the second support ring 422 are respectively provided at both ends of the body portion 41 in the axial direction to support the body portion 41, so that the body portion 41 can be more stably and reliably supported, and the structure is simple.

And the first support ring 421 closer to the substrate 21 in the first support ring 421 and the second support ring 422 is used to electrically connect the auxiliary anode 4 with the positive electrode of the power supply 51, so that the distance between the potential loading position of the auxiliary anode 4 (i.e. the position of the auxiliary anode 4 electrically connected with the positive electrode of the power supply 51) and the cathode target 31 can be increased on the basis of not changing the distance between the auxiliary anode 4 and the substrate support 2 and the cathode target 31, and the path of electrons in the process of concentrating to the auxiliary anode 4 is prolonged, so that the electrons obtain more energy, more neutral ions are ionized, and the overall ionization rate is more effectively improved.

Meanwhile, since the space on the first support ring 421 side is larger than the space between the second support ring 422 and the cathode target 31, the first support ring 421 is used to fix the auxiliary anode 4 on the vacuum chamber 1, so that the installation operation is more convenient.

In this case, the diameters (i.e., the difference between the inner and outer diameters) of the first and second support rings 421 and 422 may be equal. Or, the diameter of the first support ring 421 may be larger than that of the second support ring 422, and at this time, it is particularly suitable for using the first support ring 421 to implement the installation and fixation of the body portion 41 and the potential loading, because the first support ring 421 has a larger area, the installation and fixation and the potential loading of the auxiliary anode 4 may be implemented more conveniently, and the installation and fixation effect is firmer.

The embodiment shown in fig. 1-2 will be further described below.

As shown in fig. 1-2, in this embodiment, the auxiliary anode 4 is disposed between the cathode target 31 and the base 21, and the distance from the cathode target 31 is 50mm, and the auxiliary anode 4 is made of a metal material such as stainless steel, and has a substantially squirrel-cage structure, which includes a body portion 41 and a support portion 42, and the body portion 41 includes a plurality of (for example, 40) rods 411, and the support portion 42 includes a first support ring 421 and a second support ring 422, and the rods 411 are uniformly spaced along the circumferential direction of the first support ring 421 and the second support ring 422, so that cylindrical cavities are defined between the rods 411, and the cylindrical cavities communicate with the hollow portions of the first support ring 421 and the second support ring 422 to form a cylindrical passage 43.

Wherein the first support ring 421 and the second support ring 422 are both coaxial with the cathode target 31, such that the channel 43 is coaxial with the cathode target 31, enabling the auxiliary anode 4 to be arranged coaxially with the cathode target 31. And the first support ring 421 and the second support ring 422 are arranged in order in the direction from the cathode target 31 to the base 21, the first support ring 421 protrudes toward the radial outside with respect to the support portion 41, while the second support ring 422 is flush with the support portion 41 in the radial direction, so that the inner diameter of the first support ring 421 is equal to the inner diameter of the second support ring 422, the outer diameter of the first support ring 421 is larger than the outer diameter of the second support ring 422, and the first support ring 421 has a ring diameter larger than the second support ring 422.

As shown in fig. 2, in this embodiment, the first support ring 421 has a connection hole 423 for matching with a connection member such as a threaded connection member to fix the auxiliary anode 4 on the vacuum chamber 1. The number of the connection holes 423 may be plural, and the plural connection holes 423 may be uniformly distributed along the circumferential direction of the first support ring 421, so as to achieve a more stable and firm installation of the auxiliary anode 4 on the vacuum chamber 1.

In addition, as can be seen from fig. 1, in this embodiment, the first support ring 421 is electrically connected to the positive electrode of the power supply 51 through a conductive member such as a wire 52, so as to electrically connect the auxiliary anode 4 to the positive electrode of the power supply 51. Here, the power source 51 is another power source than the power source 51 electrically connected to the ignition electrode 32, and in this case, for convenience of distinction, the power source 51 electrically connected to the auxiliary anode 4 may be referred to as a first power source, and the power source 51 electrically connected to the ignition electrode 32 may be referred to as a second power source.

The cathode target 31 is electrically connected to the negative electrode of the first power supply. Thus, the auxiliary anode 4 and the cathode target 31 are electrically connected to the positive electrode and the negative electrode of the same power supply 51, respectively, and an electric field is formed between the auxiliary anode 4 and the cathode target 31. An insulating member 53 is disposed between the vacuum chamber 1 and a conductive member such as a wire 52 electrically connected between the first support ring 421 and the positive electrode of the power supply 51, and the insulating member 53 insulates each other.

Based on the arrangement, a uniformly distributed columnar electric field is formed between the auxiliary anode 4 and the cathode target 31, field electron emission on the surface of the cathode target 31 can be enhanced, uniform distribution of arc spots on the surface of the cathode target 31 is promoted, formation of large particles 71 is reduced, the electron movement speed is accelerated, the ionization rate of the cathode target 31 is improved, meanwhile, the formed uniform electric field can attract electrons and negatively charged large particle liquid drops in the plasma 7, a large particle filtering effect is achieved, the number of large particles moving to the surface of the substrate 21 is reduced, the coating quality is effectively improved, and the application range of the arc ion plating technology is widened.

Meanwhile, the auxiliary anode 4 is simple in structure, easy to install, suitable for cathode targets 31 of various sizes, and capable of being matched with the matrix pulse biasing device 61 for use, and further reduces the deposition quantity of large particles 71 on the surface of a coating film, so that the coating quality is further improved.

The above description is only exemplary of the present invention and should not be taken as limiting the invention, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.