阅读说明：本技术 磁控溅射镀膜装置 (Magnetron sputtering coating device ) 是由 王培红 李晨光 胡国栋 于 2019-05-05 设计创作，主要内容包括：本发明提供了一种磁控溅射镀膜装置,所述镀膜装置包括镀膜腔室、镀膜辊及多个旋转阴极,所述镀膜腔室包括多个子镀膜腔室,多个所述子镀膜腔室围绕所述镀膜辊周缘设置,每一所述子镀膜腔室内至少有一个所述旋转阴极。所述旋转阴极包括圆柱状的本体,装于所述本体外周面的靶材及装于所述本体内部的磁体,所述磁体包括第一磁体及对称设置于所述第一磁体两侧的两个第二磁体。所述第一磁体与所述第二磁体在所述靶材表面形成磁场,在所述横截面上,所述磁场包括第一磁场最大点和第二磁场最大点,所述第一磁场最大点或所述第二磁场最大点与所述交点的连线与所述中心线的夹角为溅射角,所述溅射角为12°～22°。本申请避免了溅射角过大影响导电薄膜的性能。(The invention provides a magnetron sputtering coating device which comprises a coating chamber, a coating roller and a plurality of rotary cathodes, wherein the coating chamber comprises a plurality of sub-coating chambers, the sub-coating chambers are arranged around the periphery of the coating roller, and at least one rotary cathode is arranged in each sub-coating chamber. The rotary cathode comprises a cylindrical body, a target material arranged on the peripheral surface of the body and magnets arranged in the body, wherein the magnets comprise a first magnet and two second magnets symmetrically arranged on two sides of the first magnet. The first magnet and the second magnet form a magnetic field on the surface of the target, the magnetic field comprises a first magnetic field maximum point and a second magnetic field maximum point on the cross section, an included angle between a connecting line of the first magnetic field maximum point or the second magnetic field maximum point and the intersection point and the central line is a sputtering angle, and the sputtering angle is 12-22 degrees. The application avoids the influence of the overlarge sputtering angle on the performance of the conductive film.)

1. A magnetron sputtering coating device is characterized by comprising a coating chamber, a coating roller and a plurality of rotating cathodes, wherein the coating roller is arranged in the coating chamber;

the rotary cathode comprises a cylindrical body, a target material arranged on the peripheral surface of the body and magnets arranged in the body, wherein the magnets comprise a first magnet and two second magnets symmetrically arranged on two sides of the first magnet; the first magnet on the cross section of the rotating cathode comprises a centerline parallel to the cross section, the centerline intersecting the axis of the rotating cathode and forming an intersection; on the cross section, a connecting line of a point on the peripheral surface of the body, which is closest to the coating roller, and the intersection point is superposed with the central line;

the magnetic pole of the first magnet adjacent to the outer peripheral surface of the body is different from the magnetic pole of the second magnet adjacent to the outer peripheral surface of the body, so that the first magnet and the second magnet form a magnetic field on the surface of the target, and the magnetic field comprises a first magnetic field maximum point and a second magnetic field maximum point on the cross section, and the first magnetic field maximum point and the second magnetic field maximum point are respectively positioned on two sides of the central line; the included angle between the connecting line of the maximum point of the first magnetic field or the maximum point of the second magnetic field and the intersection point and the central line is a sputtering angle, and the sputtering angle is 12-22 degrees.

2. The magnetron sputtering coating device according to claim 1, wherein the magnetic field intensity of the first magnetic field maximum point and the magnetic field intensity of the second magnetic field maximum point are the same, and the magnetic field intensity is 750Gs to 2100 Gs.

3. The magnetron sputtering coating apparatus according to claim 2 wherein each of said sub-coating chambers is provided with one of said rotating cathodes disposed opposite said coating roller, and wherein a line connecting a maximum point of said first magnetic field and a maximum point of said second magnetic field is a first line, and wherein a line connecting a center of said coating roller and said intersection point in said transverse direction is a second line, and wherein said first line intersects said second line at an angle of 90 °.

4. The magnetron sputtering coating apparatus according to claim 2, wherein each of said sub-coating chambers is provided with two of said rotary cathodes disposed opposite to said coating roller, the two of said rotary cathodes being respectively a first rotary cathode and a second rotary cathode disposed adjacent to said first rotary cathode, an extension line of a line connecting said first magnetic field maximum point and said second magnetic field maximum point of said first rotary cathode being a first extension line, an extension line of a line connecting said first magnetic field maximum point and said second magnetic field maximum point of said second rotary cathode being a second extension line, and said first extension line and said second extension line intersecting at an extension intersection point; the connection line of the second magnetic field maximum point of the first rotating cathode and the first magnetic field maximum point of the second rotating cathode is a third connection line, the connection line of the circle center of the film coating roller and the extension intersection point is a fourth connection line, and the third connection line and the fourth connection line are intersected and form an included angle of 90 degrees.

5. The magnetron sputtering coating device according to claim 4, wherein the length of the third connecting line is 100 to 270 mm.

6. The magnetron sputtering coating apparatus according to claim 4 or 5, wherein an angle between the first extension line and the second extension line is 120 ° to 180 °.

7. The magnetron sputtering coating device according to any one of claims 1 to 4, wherein the coating device further comprises a feeding chamber and a receiving chamber which are communicated with the coating chamber and symmetrically arranged at two sides of the coating chamber, guide rollers are arranged in the feeding chamber, the coating chamber and the receiving chamber, and guide rollers guide the base film to enter the coating chamber from the feeding chamber for coating and then lead the base film out of the coating chamber to the receiving chamber.

8. The magnetron sputtering coating device according to claim 7, wherein the feeding chamber comprises a feeding roller, the base film is mounted on the feeding roller, the receiving chamber comprises a receiving roller, and the base film is received on the receiving roller after being coated.

9. The magnetron sputter coating apparatus according to claim 1, wherein a plurality of said sub-coating chambers are isolated from each other by a partition plate.

10. The magnetron sputtering coating apparatus according to claim 9, wherein each of said sub-coating chambers is provided with a dc power supply for supplying power to said rotating cathode, and a discharge voltage of said dc power supply is 240V to 350V.

Technical Field

The invention relates to the field of vacuum coating equipment, in particular to a magnetron sputtering coating device.

Background

Disclosure of Invention

The invention provides a magnetron sputtering coating device, which avoids the influence of overlarge sputtering angle on the resistivity, crystallinity and uniformity of a transparent conductive film.

The invention provides a magnetron sputtering coating device which comprises a coating chamber, a coating roller and a plurality of rotary cathodes, wherein the coating roller is arranged in the coating chamber; the rotary cathode comprises a cylindrical body, a target material arranged on the peripheral surface of the body and magnets arranged in the body, wherein the magnets comprise a first magnet and two second magnets symmetrically arranged on two sides of the first magnet. The first magnet on the cross section of the rotating cathode includes a centerline parallel to the cross section, the centerline intersecting the axis of the rotating cathode and forming an intersection. On the cross section, a connecting line of a point on the outer peripheral surface of the body, which is closest to the coating roller, and the intersection point coincides with the central line. The magnetic pole of the first magnet adjacent to the outer peripheral surface of the body is different from the magnetic pole of the second magnet adjacent to the outer peripheral surface of the body, so that the first magnet and the second magnet form a magnetic field on the surface of the target, the magnetic field comprises a first magnetic field maximum point and a second magnetic field maximum point on the cross section, and the first magnetic field maximum point and the second magnetic field maximum point are respectively positioned on two sides of the central line. The included angle between the connecting line of the maximum point of the first magnetic field or the maximum point of the second magnetic field and the intersection point and the central line is a sputtering angle which is 12-22 degrees, and the phenomenon that the ratio of partial low-density and high-strength plasmas is higher between two plasmas with an overlarge sputtering angle theta is avoided, so that the resistivity, the crystallinity and the uniformity of the transparent conductive film are influenced.

The magnetic field intensity of the first magnetic field maximum point is the same as that of the second magnetic field maximum point, the magnetic field intensity is 750 Gs-2100 Gs, and the film coating effect is better in the magnetic field intensity range.

Each sub-coating chamber is provided with a rotating cathode which is arranged opposite to the coating roller, a connecting line of a maximum point of the first magnetic field and a maximum point of the second magnetic field is a first connecting line, a connecting line of the circle center of the coating roller and the intersection point on the cross section is a second connecting line, the first connecting line and the second connecting line are intersected, and the included angle is 90 degrees, namely, the first connecting line is perpendicular to the second connecting line and is symmetrical relative to the second connecting line, so that the target can be sputtered onto the base film more uniformly, and the coating quality of the base film is improved.

Each sub-coating chamber is provided with two rotary cathodes arranged opposite to the coating roller, the two rotary cathodes are respectively a first rotary cathode and a second rotary cathode arranged adjacent to the first rotary cathode, an extension line of a connecting line of a first magnetic field maximum point and a second magnetic field maximum point of the first rotary cathode is a first extension line, an extension line of a connecting line of the first magnetic field maximum point and the second magnetic field maximum point of the second rotary cathode is a second extension line, and the first extension line and the second extension line are intersected at an extension intersection point. The connection line of the second magnetic field maximum point of the first rotary cathode and the first magnetic field maximum point of the second rotary cathode is a third connection line, the connection line of the circle center of the film coating roller and the extension intersection point is a fourth connection line, the third connection line and the fourth connection line are intersected, and the included angle is 90 degrees, namely, the third connection line is perpendicular to the fourth connection line, the third connection line is symmetrical relative to the fourth connection line, or the first rotary cathode and the second rotary cathode are symmetrical relative to the fourth connection line. Under the condition, the target can be more uniformly sputtered on the base film. Each sub-coating chamber is provided with two rotary cathodes, so that the coating quality is effectively improved.

The length of the third connecting line is 100-270 mm, and under the condition, the coating quality of the coating device is better.

Wherein the included angle between the first extension line and the second extension line is 120-180 degrees, and under the condition, the coating quality of the coating device is better.

The film coating device further comprises a feeding cavity and a receiving cavity which are communicated with the film coating cavity and symmetrically arranged on two sides of the film coating cavity, guide rollers are arranged in the feeding cavity, the film coating cavity and the receiving cavity, the guide rollers guide a base film to enter the film coating cavity for coating, then the base film is led out from the film coating cavity to the receiving cavity, and the guide rollers can be arranged in a plurality to ensure the transmission quality of the base film.

The film coating device comprises a feeding chamber, a receiving chamber and a film coating chamber, wherein the feeding chamber comprises a feeding roller, a base film is arranged on the feeding roller, the receiving chamber comprises a receiving roller, the base film is accommodated on the receiving roller after being coated, and the feeding roller and the receiving roller are cylindrical and are convenient to accommodate and store.

The plurality of sub-coating chambers are isolated by the isolation plates, so that the condition that the coating quality is poor due to the fact that the rotating cathodes in the plurality of sub-coating chambers are mutually influenced in the sputtering process when the coating device is used for coating is avoided, and meanwhile, the sub-coating chambers and the guide roller chamber are also prevented from being mutually influenced.

Each sub-coating chamber is provided with a direct current power supply for providing power for the rotary cathode, the discharge voltage of the direct current power supply is 240-350V, and the coating effect of the base film 200 can be better due to the discharge voltage in the range.

The coating device provided by the invention comprises a coating chamber, a coating roller arranged in the coating chamber and a plurality of rotary cathodes, wherein the coating chamber comprises a plurality of sub-coating chambers which are arranged around the periphery of the coating roller, and at least one rotary cathode is arranged in each sub-coating chamber; the first magnet and the second magnet form a magnetic field on the surface of the target, the magnetic field comprises a first magnetic field maximum point and a second magnetic field maximum point on the cross section, an included angle between a connecting line of the first magnetic field maximum point or the second magnetic field maximum point and the intersection point and the central line is a sputtering angle which is 12-22 degrees, and the phenomenon that the higher the proportion of partial low-density and high-strength plasmas exists between two plasmas with overlarge sputtering angles is avoided, so that the resistivity, the crystallinity and the uniformity of the transparent conductive film are influenced.

Drawings

In order to more clearly illustrate the technical solution of the present invention, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.

FIG. 1 is a first embodiment of the construction of a magnetron sputtering coating apparatus provided by the present invention;

FIG. 2 is a partial block diagram of a rotary cathode provided in the present invention;

FIG. 3 is a schematic view of a part of the structure of a rotating cathode and a coating roller in a first embodiment of the present invention;

FIG. 4 is a second embodiment of the structure of the magnetron sputtering coating apparatus provided by the present invention;

FIG. 5 is a schematic view of a part of the structure of a rotating cathode and a coating roller according to a second embodiment of the present invention.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

Referring to fig. 1 and 2, in a first embodiment of the magnetron sputtering coating apparatus according to the present invention, the coating apparatus 100 includes a coating chamber 10, a coating roller 20 disposed in the coating chamber 10, and a plurality of rotating cathodes 30. The coating chamber 10 comprises a plurality of sub-coating chambers 11, the sub-coating chambers 11 are arranged around the periphery of the coating roller 20, and at least one rotating cathode 30 is arranged in each sub-coating chamber 11. As shown in fig. 2, the rotating cathode 30 includes a cylindrical main body 31, a target 32 mounted on an outer peripheral surface of the main body 31, and a magnet 33 mounted inside the main body 31. In this embodiment, the body 31 is a hollow cylinder, and the magnet 33 includes a first magnet 331 and two second magnets 332 symmetrically disposed on two sides of the first magnet 331. The first magnet 331 on the cross section of the rotating cathode comprises a centre line 333 parallel to the cross section, the centre line 333 intersecting the axis of the rotating cathode 30 and forming an intersection point 34. On the cross section, a connecting line of a point which is closest to the coating roller 20 on the outer peripheral surface of the body 31 and the intersection point 34 is coincident with the center 333 line. The magnetic pole of the first magnet 331 adjacent to the outer peripheral surface of the main body is different from the magnetic pole of the second magnet 332 adjacent to the outer peripheral surface of the main body, so that the first magnet 331 and the second magnet 332 form a magnetic field on the surface of the target 32, the magnetic field includes a first magnetic field maximum point 321 and a second magnetic field maximum point 322 on the cross section, the first magnetic field maximum point 321 and the second magnetic field maximum point 322 are respectively located on both sides of the center line 333, an included angle between a connecting line of the first magnetic field maximum point 321 or the second magnetic field maximum point 322 and the intersection point 34 and the center line 333 is a sputtering angle θ, and the sputtering angle θ is 12 ° to 22 °. The first magnetic field maximum point 321 and the second magnetic field maximum point 322 that form the sputtering angle θ are located on the outer circumferential surface of the rotating cathode 30 and are symmetrical with respect to the center line 333, and the intersection point 34 is the center of the rotating cathode 30 on the axial cross section.

The distance between the first magnet 331 and the second magnet 332 of the magnetron sputtering coating device is small enough, so that the distance between the first magnetic field maximum point 321 and the second magnetic field maximum point 322 is small enough, and the sputtering angle theta between the connecting line of the first magnetic field maximum point 321 or the second magnetic field maximum point 322 and the intersection point 34 and the central line 333 is 12-22 degrees, thereby avoiding that the ratio of partial low-density and high-strength plasmas is higher between two plasmas with an excessively large sputtering angle theta, and further influencing the resistivity, crystallinity and uniformity of the transparent conductive film.

In this embodiment, the distances between the two second magnets 332 and the first magnet 331 are the same, the magnetic field strengths of the first magnetic field maximum point 321 and the second magnetic field maximum point 322 are the same, and the magnetic field strength is 750Gs to 2100 Gs. In this embodiment, the cross-sections of the first magnet 331 and the second magnet 332 are rectangular, the first magnet 331 and the two second magnets 332 are located in a half-circular area of the body with a circular cross-section, and the three of the first magnet 331 and the two second magnets 332 are not located on the same diameter of the body with a circular cross-section.

Further, the coating roller 20 is a cylinder, the cross section of which is circular, and is arranged in the middle of the coating chamber 10. The coating chamber 10 further comprises a guide roller chamber 12, the sub-coating chambers 11 are isolated by partition plates 13, the sub-coating chambers 11 are sequentially arranged on the periphery of the coating roller 20, the guide roller chamber 12 surrounds the periphery of the coating roller 20 and is located on one side, opposite to the sub-coating chambers 11, of the coating roller 20, and the guide roller chamber 12 is isolated from the adjacent two sub-coating chambers 11 by the partition plates 13. The plurality of sub-coating chambers 11 and the guide roll chamber 12 are isolated by the isolation plate 13, so that the situation that the coating quality is poor due to the mutual influence of the rotating cathodes 30 in the plurality of sub-coating chambers 11 in the sputtering process when the coating device 100 is used for coating is avoided, and the mutual influence of the sub-coating chambers 11 and the guide roll chamber 12 is also avoided. In this embodiment, the number of the sub-coating cavities 11 is 6, and of course, the number of the sub-coating cavities 11 may also be set according to actual needs, which is not limited herein.

Each sub-coating chamber 11 is further provided with a direct current power supply 90 for providing power for the rotating cathode 30, the direct current power supply 90 is electrically connected with the rotating cathode 30, the discharge voltage of the direct current power supply 90 is 240V-350V, and the discharge voltage in the range can enable the coating effect of the base film 200 to be better.

The coating device 100 further comprises a feeding chamber 40 and a receiving chamber 50 which are communicated with the coating chamber 10 and symmetrically arranged on two sides of the coating chamber 10. Guide rollers 60 are arranged in the feeding chamber 40, the coating chamber 10 and the receiving chamber 50. The guide roller 60 guides the base film 200 from the loading chamber 40 into the coating chamber 10 for coating, and then guides the base film 200 from the coating chamber 10 into the receiving chamber 50. The feeding chamber 40, the guide roller chamber 12 and the receiving chamber 50 are arranged in parallel and communicated in sequence. In this embodiment, the number of the guide rollers 60 is 6, one guide roller 60 is arranged in each of the feeding chamber 40 and the receiving chamber 50, 2 guide rollers 60 are arranged in the guide roller chamber 12 in parallel at intervals and are arranged on the periphery of the coating roller 20, and 2 guide rollers 60 are symmetrical with respect to the center line of the coating roller 20. The guide roller 60 near the loading chamber 40 is used for introducing and attaching the base film 200 onto the coating roller 20, and the guide roller 60 near the receiving chamber 50 is used for leading the base film 200 which is attached to the coating roller 20 and is also coated out of the coating roller 20. Of course, in other embodiments, the number of the guide rollers 60 may be designed according to actual needs, and a plurality of the guide rollers 60 may be disposed in the feeding chamber 40, the receiving chamber 50, and the guide roller chamber 12.

Further, the feeding chamber 40 includes a feeding roller 70, the base film 200 is mounted on the feeding roller 70, the receiving chamber 50 includes a receiving roller 80, and the base film 200 is accommodated on the receiving roller 80 after being coated. In this embodiment, the feeding roller 70 and the material receiving roller 80 are cylinders, and the lengths of the feeding roller 70 and the material receiving roller 80 are the same as the length of the film coating roller 20. The base film 200 is wound on the feeding roller 70, and is wound around the outer circumferential surface of the film coating roller 20 by the guide roller 60 to be opposite to the plurality of rotating cathodes 30, the rotating cathodes 30 coat the base film 200, and the coated base film 200 is transferred to the material receiving roller 80 by the guide roller 60 and wound on the material receiving roller 80. The feeding roller 70, the receiving roller 80, the guide roller 60 and the coating roller 20 rotate in the same direction, so that the base film 200 is driven to enter the coating chamber 10 from the feeding chamber 40 for coating, and after coating is finished, the base film enters the receiving chamber 50 from the coating chamber 10 and is stored on the receiving roller 80.

Referring to fig. 3, in the present embodiment, each of the sub-coating chambers 11 is provided with a rotating cathode 30 disposed opposite to the coating roller 20, a connection line between the first magnetic field maximum point 321 and the second magnetic field maximum point 322 is a first connection line 323, a connection line between the center 21 of the coating roller and the intersection point 34 on the cross section is a second connection line AB, and the first connection line 323 and the second connection line AB intersect at an included angle of 90 °. The first magnetic field maximum point 321 and the second magnetic field maximum point 322 are located on the outer circumferential surface of the rotating cathode 30 and are symmetrical with respect to the central line 333, and the intersection point 34 is a center of the rotating cathode 30 on the axial cross section, it can be understood that the first connecting line 323 is perpendicular to the second connecting line AB and is symmetrical with respect to the second connecting line AB, so as to ensure that the target 32 can be more uniformly sputtered onto the base film 200, and improve the film coating quality of the base film 200.

Referring to fig. 4 and 5, this embodiment is a second embodiment of the coating apparatus, and the difference between the coating apparatus of this embodiment and the first embodiment is that each of the sub-coating chambers 11 in this embodiment is provided with two rotating cathodes disposed opposite to the coating roller 20, and the two rotating cathodes are a first rotating cathode 30a and a second rotating cathode 30b disposed adjacent to the first rotating cathode 30 a. An extension line of a connection line of the first magnetic field maximum point 321 and the second magnetic field maximum point 322 of the first rotating cathode 30a is a first extension line 324, an extension line of a connection line of the first magnetic field maximum point 321 and the second magnetic field maximum point 322 of the second rotating cathode 30b is a second extension line 325, and the first extension line 324 and the second extension line 325 intersect at an extension intersection point K. A connection line of the second magnetic field maximum point 322 of the first rotating cathode 30a and the first magnetic field maximum point 321 of the second rotating cathode 30b is a third connection line 326, a connection line of the center 21 of the film coating roller and the extension intersection point K is a fourth connection line AK, and the third connection line 326 and the fourth connection line AK intersect at an included angle of 90 °. The first magnetic field maximum point 321 and the second magnetic field maximum point 322 are located on the outer circumferential surface of the rotating cathode 30 and are symmetrical with respect to the center line 333, and the intersection point 34 is a center of the rotating cathode 30 on an axial cross section, that is, the third connecting line 326 is perpendicular to the fourth connecting line AK and the third connecting line 326 is symmetrical with respect to the fourth connecting line AK, or the first rotating cathode 30a and the second rotating cathode 30b are symmetrical with respect to the fourth connecting line AK. Under this condition, the target 32 can be more uniformly sputtered onto the base film 200. Each sub-coating chamber 11 is provided with two rotary cathodes, so that the coating quality is effectively improved. Of course, a plurality of the rotating cathodes arranged opposite to the coating roller 20 may be further provided in each of the sub-coating chambers 11 as required.

Each sub-coating chamber 11 is further provided with a dc power supply 90 for supplying power to the first rotating cathode 30a and the second rotating cathode 30b, the dc power supply 90 is electrically connected to the first rotating cathode 30a and the second rotating cathode 30b, the discharge voltage of the dc power supply 90 is 240V-350V, and the discharge voltage in this range can improve the coating effect of the base film 200. In this embodiment, the number of the sub-coating cavities 11 is 4, and of course, the number of the sub-coating cavities 11 may be designed according to actual needs.

The length of the third connecting line 326 is used to indicate the distance between the second magnetic field maximum point 322 of the first rotating cathode 30a and the first magnetic field maximum point 321 of the second rotating cathode 30b, and preferably, the length of the third connecting line 326 is 100 to 270mm, that is, the distance between the second magnetic field maximum point 322 of the first rotating cathode 30a and the first magnetic field maximum point 321 of the second rotating cathode 30b is 100 to 270 mm. Preferably, the included angle α between the first extension line 324 and the second extension line 325 is 120 ° to 180 °, and under the above conditions, the coating quality of the coating device 100 is better.

The coating device 100 provided by the invention comprises a coating chamber 10, a coating roller 20 arranged in the coating chamber 10 and a plurality of rotary cathodes 30, wherein the coating chamber 10 comprises a plurality of sub-coating chambers 11, the sub-coating chambers 11 are arranged around the periphery of the coating roller 20, and each sub-coating chamber 11 comprises at least one rotary cathode 30. On the cross section, a first magnetic field maximum point 321 and a second magnetic field maximum point 322 are formed on the surface of the target 32 by the first magnet 331 and the second magnet 332, an included angle between a connecting line of the first magnetic field maximum point 321 or the second magnetic field maximum point 322 and the intersection point 34 and the central line 333 is a sputtering angle theta which is 12-22 degrees, and the phenomenon that the higher proportion of partial low-density and high-intensity plasma exists between two plasmas with an excessively large sputtering angle theta is avoided, so that the resistivity, the crystallinity and the uniformity of the transparent conductive film are influenced.

The above embodiments of the present invention are described in detail, and the principle and the implementation of the present invention are explained by applying specific embodiments, and the above description of the embodiments is only used to help understanding the method of the present invention and the core idea thereof; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.