阅读说明：本技术 一种真空腔体泄漏自动侦测方法 (Automatic detection method for leakage of vacuum cavity ) 是由 戴传勇 叶佳松 于 2020-06-30 设计创作，主要内容包括：本发明公开了一种真空腔体泄漏自动侦测方法,具体如下：(1)、将产品传送至溅镀腔体内,并将溅镀腔体内的真空值设定完成；(2)、晶圆开始进行溅镀工艺,并记录溅镀过程数据；(3)、晶圆溅镀过程中对电压值进行持续检测、判定；(4)、溅镀工艺作业完成,将检测的溅镀数据进行存储。通过在溅镀工艺过程中以检测晶圆溅镀时回馈的电压值来判断当前是否存在外气泄漏,达到时刻对溅镀腔体的真空度进行检测、保障晶圆的生产质量和降低企业生产成本的目的。(The invention discloses an automatic detection method for vacuum cavity leakage, which comprises the following steps: (1) the product is conveyed into the sputtering cavity, and the vacuum value in the sputtering cavity is set; (2) starting the sputtering process on the wafer, and recording the data of the sputtering process; (3) continuously detecting and judging the voltage value in the wafer sputtering process; (4) and after the sputtering process operation is finished, storing the detected sputtering data. Whether external air leakage exists at present is judged by detecting the voltage value fed back when the wafer is sputtered in the sputtering process, so that the aims of detecting the vacuum degree of the sputtering cavity, guaranteeing the production quality of the wafer and reducing the production cost of enterprises are fulfilled.)

1. An automatic detection method for leakage of a vacuum cavity is characterized by comprising the following steps:

(1) the product is conveyed into the sputtering cavity, and the vacuum value in the sputtering cavity is set;

(2) starting the sputtering process on the wafer, and recording the data of the sputtering process;

(3) continuously detecting and judging the voltage value in the wafer sputtering process;

(4) and after the sputtering process operation is finished, storing the detected sputtering data.

2. The method as claimed in claim 1, wherein the detecting step (3) comprises the following steps:

(3-1) detecting the feedback voltage value in the wafer sputtering process and acquiring corresponding data;

(3-2) transmitting the acquired data to the intelligent terminal, and comparing the acquired data with the data stored in the intelligent terminal;

(3-3) correspondingly operating the sputtering process according to the comparison result:

if the detected voltage value is in the set region, the sputtering process is continued;

if the detected voltage value is outside the set region, controlling the sputtering process to stop, and performing investigation and maintenance;

and (3-4) repeating the step (3-1) after the examination and the overhaul are finished.

Technical Field

The invention relates to the field of wafer production and application, in particular to an automatic detection method for leakage of a vacuum cavity.

Background

The sputtering process is an essential step in wafer production and processing, in the traditional process, the wafer is generally conveyed into a cavity of the sputtering equipment through a manipulator in the wafer sputtering equipment, the sputtering process is started after the vacuum in the cavity reaches a set value, but in the process, the sputtering cavity is easy to leak outside air, once the outside air leaks, oxygen molecules in the air can cause film formation pollution defects on the sputtering product, so that subsequent wafer bumps have glass defects, the product quality of the wafer is influenced, and the cost investment of enterprises is increased.

Disclosure of Invention

In order to solve the technical problems, the invention provides an automatic detection method for vacuum chamber leakage, which aims to achieve the aims of constantly detecting the vacuum degree of a sputtering chamber, guaranteeing the production quality of wafers and reducing the production cost of enterprises.

In order to achieve the purpose, the technical scheme of the invention is as follows:

an automatic detection method for leakage of a vacuum cavity comprises the following steps:

(1) the product is conveyed into the sputtering cavity, and the vacuum value in the sputtering cavity is set;

(2) starting the sputtering process on the wafer, and recording the data of the sputtering process;

(3) continuously detecting and judging the voltage value in the wafer sputtering process;

(4) and after the sputtering process operation is finished, storing the detected sputtering data.

The invention judges whether external air leakage exists at present by detecting the voltage value fed back when the wafer is sputtered in the sputtering process, thereby achieving the aims of constantly detecting the vacuum degree of the sputtering cavity, ensuring the production quality of the wafer and reducing the production cost of enterprises.

2. The method as claimed in claim 1, wherein the detecting step (3) comprises the following steps:

(3-1) detecting the feedback voltage value in the wafer sputtering process and acquiring corresponding data;

(3-2) transmitting the acquired data to the intelligent terminal, and comparing the acquired data with the data stored in the intelligent terminal;

(3-3) correspondingly operating the sputtering process according to the comparison result:

if the detected voltage value is in the set region, the sputtering process is continued;

if the detected voltage value is outside the set region, controlling the sputtering process to stop, and performing investigation and maintenance;

and (3-4) repeating the step (3-1) after the examination and the overhaul are finished.

The invention has the following advantages:

1. the invention judges whether external air leakage exists at present by detecting the voltage value fed back when the wafer is sputtered in the sputtering process, thereby achieving the aims of constantly detecting the vacuum degree of the sputtering cavity, ensuring the production quality of the wafer and reducing the production cost of enterprises.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below.

The invention provides an automatic detection method for leakage of a vacuum cavity, which has the working principle that whether external air leakage exists at present is judged by detecting a voltage value fed back when a wafer is sputtered in the sputtering process, so that the aims of constantly detecting the vacuum degree of the sputtering cavity, guaranteeing the production quality of the wafer and reducing the production cost of enterprises are fulfilled.

The present invention will be described in further detail with reference to examples and specific embodiments.

An automatic detection method for leakage of a vacuum cavity comprises the following steps:

(1) the product is conveyed into the sputtering cavity, and the vacuum value in the sputtering cavity is set;

(2) starting the sputtering process on the wafer, and recording the data of the sputtering process;

(3) continuously detecting and judging the voltage value in the wafer sputtering process;

(3-1) detecting the feedback voltage value in the wafer sputtering process and acquiring corresponding data;

(3-2) transmitting the acquired data to the intelligent terminal, and comparing the acquired data with the data stored in the intelligent terminal;

(3-3) correspondingly operating the sputtering process according to the comparison result:

if the detected voltage value is in the set region, the sputtering process is continued;

if the detected voltage value is outside the set region, controlling the sputtering process to stop, and performing investigation and maintenance;

and (3-4) repeating the step (3-1) after the examination and the overhaul are finished.

(4) And after the sputtering process operation is finished, storing the detected sputtering data.

In the actual sputtering process, when external gas leakage occurs, the process gas (Ar) is contaminated by oxygen in the air, which causes the voltage value fed back during the wafer sputtering to be much higher than that in the normal production, in the actual production process, the voltage is generally 470 volts (with small variation in the upper and lower ranges) under the condition of no external gas leakage, and when external gas leakage occurs, the voltage value at this time exceeds the positive production voltage value by more than 30 volts, so the alarm value can be directly set to be 500 volts. That is, when the voltage value is detected to exceed 500 volts (the specific setting value can be set by a person skilled in the art according to actual production requirements), the control terminal controls the sputtering device to stop working, and at this time, only the wafer being sputtered is reported to be wasted, and batch scrapping is not caused, so that the sputtering quality of the wafer is ensured, and the production cost is reduced.

The above description is only a preferred embodiment of the method for automatically detecting leakage of a vacuum chamber disclosed in the present invention, and it should be noted that, for those skilled in the art, variations and modifications can be made without departing from the inventive concept, and these variations and modifications all fall within the scope of the present invention.