阅读说明：本技术 半导体镀膜设备中的温度调整方法及半导体镀膜设备 (Temperature adjusting method in semiconductor coating equipment and semiconductor coating equipment ) 是由 王馨梦 申震 于 2020-06-22 设计创作，主要内容包括：本发明实施例公开了一种半导体镀膜设备中的温度调整方法及半导体镀膜设备,所述方法包括：基于工艺文件对电池中的晶片进行镀膜工艺后,获取膜厚不合格的晶片的信息；基于所述膜厚不合格晶片的信息,确定所述工艺腔室内待调整的目标温区,并确定对应的温度参数调整方案；基于所述温度参数调整方案,对工艺腔室内待调整的所述目标温区的显示热偶和/或控制热偶的温度设定值进行调整,并通过调整后的温度设定值对所述工艺文件进行更新,基于更新后的所述工艺文件对待镀膜晶片进行镀膜工艺。通过本方法,可以提高镀膜工艺的工作效率。(The embodiment of the invention discloses a temperature adjusting method in semiconductor coating equipment and the semiconductor coating equipment, wherein the method comprises the following steps: after a film coating process is carried out on the wafers in the battery based on the process file, the information of the wafers with unqualified film thickness is obtained; determining a target temperature zone to be adjusted in the process chamber based on the information of the wafer with unqualified film thickness, and determining a corresponding temperature parameter adjustment scheme; and adjusting the temperature set value of a display thermocouple and/or a control thermocouple of the target temperature zone to be adjusted in the process chamber based on the temperature parameter adjustment scheme, updating the process file according to the adjusted temperature set value, and performing a film coating process on the wafer to be coated based on the updated process file. By the method, the working efficiency of the coating process can be improved.)

1. A temperature adjusting method in a semiconductor coating device comprises the following steps:

after a film coating process is carried out on the wafers in the battery based on the process file, information of the wafers with unqualified film thicknesses is obtained;

determining a target temperature zone to be adjusted in the process chamber based on the information of the wafer with unqualified film thickness, and determining a corresponding temperature parameter adjustment scheme;

and adjusting the temperature set value of a display thermocouple and/or a control thermocouple of the target temperature zone to be adjusted in the process chamber based on the temperature parameter adjustment scheme, updating the process file according to the adjusted temperature set value, and performing a film coating process on the wafer to be coated based on the updated process file.

2. The method of claim 1, wherein determining a corresponding temperature parameter adjustment based on the information about the wafer with the film thickness failing comprises:

acquiring film thickness data of the unqualified wafer based on the information of the unqualified film thickness wafer;

acquiring a deviation value between the film thickness of the unqualified wafer and the reference film thickness in the target temperature zone according to the film thickness data of the unqualified wafer;

based on the deviation value, a corresponding temperature parameter adjustment scheme is determined.

3. The method of claim 2, wherein determining a corresponding temperature parameter adjustment based on the deviation value comprises:

acquiring a maximum deviation value and a minimum deviation value in the deviation values;

determining the corresponding temperature parameter adjustment scheme based on the maximum deviation value and the minimum deviation value.

4. The method of claim 3, wherein determining the corresponding temperature parameter adjustment based on the maximum deviation value and the minimum deviation value comprises:

under the condition that the maximum deviation value and the minimum deviation value are both in a preset adjustable range, if the minimum deviation value is larger than 0 or the maximum deviation value is smaller than 0, the temperature parameter adjusting scheme is a scheme for adjusting the display thermocouple in a constant temperature step;

determining a first temperature parameter in the temperature parameter adjustment scheme based on the maximum deviation value and the minimum deviation value;

the adjusting the temperature set value of the display thermocouple or the control thermocouple of the target temperature zone to be adjusted in the process chamber based on the temperature parameter adjusting scheme comprises the following steps:

and adjusting the temperature set value of the display thermocouple of the target temperature zone to be adjusted in the process chamber based on the first temperature parameter in the temperature parameter adjustment scheme.

5. The method of claim 3, wherein determining the corresponding temperature parameter adjustment based on the maximum deviation value and the minimum deviation value comprises:

under the condition that the maximum deviation value and the minimum deviation value are both in a preset adjustable range, if the minimum deviation value is smaller than 0 and the maximum deviation value is larger than 0, the temperature parameter adjusting scheme is a scheme for adjusting the lower limit value of the temperature of the control thermocouple in the deposition step;

determining a second temperature parameter in the temperature parameter adjustment scheme based on the maximum deviation value and the minimum deviation value;

the adjusting the temperature set value of the display thermocouple or the control thermocouple of the target temperature zone to be adjusted in the process chamber based on the temperature parameter adjusting scheme comprises the following steps:

and adjusting the lower limit value of the temperature of the control thermocouple of the target temperature zone to be adjusted in the process chamber in the deposition step based on the second temperature parameter in the temperature parameter adjustment scheme.

6. The method of claim 3, wherein determining the corresponding temperature parameter adjustment based on the maximum deviation value and the minimum deviation value comprises:

under the condition that the maximum deviation value and the minimum deviation value are both in a preset adjustable range, if any one of the minimum deviation value and the maximum deviation value is 0 and the other one is not 0, the temperature parameter adjusting scheme is a scheme for adjusting the upper limit value of the temperature of the control thermocouple in the constant temperature step;

determining a third temperature parameter in the temperature parameter adjustment scheme based on the minimum deviation value and the maximum deviation value;

the adjusting the temperature set value of the display thermocouple or the control thermocouple of the target temperature zone to be adjusted in the process chamber based on the temperature parameter adjusting scheme comprises the following steps:

and adjusting the upper limit value of the temperature of the control thermocouple of the target temperature zone to be adjusted in the process chamber in a constant temperature step based on the third temperature parameter in the temperature parameter adjustment scheme.

7. The method of claim 3, wherein determining the corresponding temperature parameter adjustment based on the maximum deviation value and the minimum deviation value comprises:

determining that the temperature parameter adjustment scheme is an equipment fault alarm scheme under the condition that one of the maximum deviation value and the minimum deviation value is not in the preset adjustable range;

the adjusting the temperature set value of the display thermocouple or the control thermocouple of the target temperature zone to be adjusted in the process chamber based on the temperature parameter adjusting scheme comprises the following steps:

and outputting preset alarm information so that corresponding workers can carry out fault maintenance on the semiconductor coating equipment.

8. A semiconductor coating apparatus comprising: an upper computer, a lower computer, a furnace tube, a display thermocouple, a control thermocouple and a process chamber, wherein,

the upper computer is used for obtaining the information of the wafer with unqualified film thickness after the wafer in the battery is subjected to a film coating process based on the process file; determining a target temperature zone to be adjusted in the process chamber based on the information of the wafer with unqualified film thickness, and determining a corresponding temperature parameter adjustment scheme; adjusting the temperature set value of a display thermocouple and/or a control thermocouple of the target temperature zone to be adjusted in the process chamber based on the temperature parameter adjustment scheme, and updating the process file according to the adjusted temperature set value;

the lower computer is connected with the upper computer and corresponds to the furnace tube, and the lower computer is used for performing a coating process on the wafer to be coated based on the updated process file.

9. The semiconductor coating device of claim 8, wherein the upper computer is further configured to:

acquiring film thickness data of the unqualified wafer based on the information of the unqualified film thickness wafer;

acquiring a deviation value between the film thickness of the unqualified wafer and the reference film thickness in the target temperature zone according to the film thickness data of the unqualified wafer;

based on the deviation value, a corresponding temperature parameter adjustment scheme is determined.

10. The semiconductor coating device of claim 8, wherein the upper computer is further configured to:

acquiring a maximum deviation value and a minimum deviation value in the deviation values;

determining the corresponding temperature parameter adjustment scheme based on the maximum deviation value and the minimum deviation value.

Technical Field

The invention relates to the technical field of photovoltaic equipment, in particular to a temperature adjusting method in semiconductor coating equipment and the semiconductor coating equipment.

Background

With the improvement of the manufacturing technology of crystalline silicon, the service life of a bulk carrier of a substrate wafer is continuously improved, and the bulk carrier is no longer a key factor for restricting the improvement of the cell efficiency. In the production of batteries, wafers are becoming thinner and thinner in order to reduce costs and to improve the technology. The subsequent problem is that the recombination of the surface of the cell is serious, which reduces the conversion efficiency of the cell, and this presents a new challenge for the solar cell surface coating technology.

In the actual solar cell coating process of mass production, a quality inspector can detect the film thickness of a wafer every time after the process of one furnace is finished, and when the film thickness of an unqualified wafer is detected, the unqualified wafer information is handed to a technologist with certain experience; the technologist gives parameters for adjusting the process according to experience; and then input into the software of the equipment so that the next furnace process of the equipment will be processed according to the new process parameters.

The existing scheme for improving the qualified rate of the film thickness of the film coating process is established under the matching mode of two kinds of work, and the film coating process can be optimized only by the cooperation of a quality inspector and a technician, so that the qualified rate of the film thickness is improved. The cooperation of the two types of work increases the labor cost, and the cooperation of the cross-department also reduces the working efficiency.

Disclosure of Invention

The embodiment of the invention aims to provide a temperature adjusting method in semiconductor coating equipment and the semiconductor coating equipment, and aims to solve the problems of high labor cost and low working efficiency in the prior art when the qualification rate of a coating process on the surface of a battery is improved.

To solve the above technical problem, the embodiment of the present invention is implemented as follows:

in a first aspect, an embodiment of the present invention provides a method for adjusting a temperature in a semiconductor coating apparatus, including:

after a film coating process is carried out on the wafers in the battery based on the process file, information of the wafers with unqualified film thicknesses is obtained;

determining a target temperature zone to be adjusted in the process chamber based on the information of the wafer with unqualified film thickness, and determining a corresponding temperature parameter adjustment scheme;

and adjusting the temperature set value of a display thermocouple and/or a control thermocouple of the target temperature zone to be adjusted in the process chamber based on the temperature parameter adjustment scheme, updating the process file according to the adjusted temperature set value, and performing a film coating process on the wafer to be coated based on the updated process file.

Optionally, the determining a corresponding temperature parameter adjustment scheme based on the information of the wafer with the unqualified film thickness includes:

acquiring film thickness data of the unqualified wafer based on the information of the unqualified film thickness wafer;

acquiring a deviation value between the film thickness of the unqualified wafer and the reference film thickness in the target temperature zone according to the film thickness data of the unqualified wafer;

based on the deviation value, a corresponding temperature parameter adjustment scheme is determined.

Optionally, the determining a corresponding temperature parameter adjustment scheme based on the deviation value includes:

acquiring a maximum deviation value and a minimum deviation value in the deviation values;

determining the corresponding temperature parameter adjustment scheme based on the maximum deviation value and the minimum deviation value.

Optionally, the determining the corresponding temperature parameter adjustment scheme based on the maximum deviation value and the minimum deviation value includes:

under the condition that the maximum deviation value and the minimum deviation value are both in a preset adjustable range, if the minimum deviation value is larger than 0 or the maximum deviation value is smaller than 0, the temperature parameter adjusting scheme is a scheme for adjusting the display thermocouple in a constant temperature step;

determining a first temperature parameter in the temperature parameter adjustment scheme based on the maximum deviation value and the minimum deviation value;

the adjusting the temperature set value of the display thermocouple or the control thermocouple of the target temperature zone to be adjusted in the process chamber based on the temperature parameter adjusting scheme comprises the following steps:

and adjusting the temperature set value of the display thermocouple of the target temperature zone to be adjusted in the process chamber based on the first temperature parameter in the temperature parameter adjustment scheme.

Optionally, the determining the corresponding temperature parameter adjustment scheme based on the maximum deviation value and the minimum deviation value includes:

under the condition that the maximum deviation value and the minimum deviation value are both in a preset adjustable range, if the minimum deviation value is smaller than 0 and the maximum deviation value is larger than 0, the temperature parameter adjusting scheme is a scheme for adjusting the lower limit value of the temperature of the control thermocouple in the deposition step;

determining a second temperature parameter in the temperature parameter adjustment scheme based on the maximum deviation value and the minimum deviation value;

the adjusting the temperature set value of the display thermocouple or the control thermocouple of the target temperature zone to be adjusted in the process chamber based on the temperature parameter adjusting scheme comprises the following steps:

and adjusting the lower limit value of the temperature of the control thermocouple of the target temperature zone to be adjusted in the process chamber in the deposition step based on the second temperature parameter in the temperature parameter adjustment scheme.

Optionally, the determining the corresponding temperature parameter adjustment scheme based on the maximum deviation value and the minimum deviation value includes:

under the condition that the maximum deviation value and the minimum deviation value are both in a preset adjustable range, if any one of the minimum deviation value and the maximum deviation value is 0 and the other one is not 0, the temperature parameter adjusting scheme is a scheme for adjusting the upper limit value of the temperature of the control thermocouple in the constant temperature step;

determining a third temperature parameter in the temperature parameter adjustment scheme based on the minimum deviation value and the maximum deviation value;

the adjusting the temperature set value of the display thermocouple or the control thermocouple of the target temperature zone to be adjusted in the process chamber based on the temperature parameter adjusting scheme comprises the following steps:

and adjusting the upper limit value of the temperature of the control thermocouple of the target temperature zone to be adjusted in the process chamber in a constant temperature step based on the third temperature parameter in the temperature parameter adjustment scheme.

Optionally, the determining the corresponding temperature parameter adjustment scheme based on the maximum deviation value and the minimum deviation value includes:

determining that the temperature parameter adjustment scheme is an equipment fault alarm scheme under the condition that one of the maximum deviation value and the minimum deviation value is not in the preset adjustable range;

the adjusting the temperature set value of the display thermocouple or the control thermocouple of the target temperature zone to be adjusted in the process chamber based on the temperature parameter adjusting scheme comprises the following steps:

and outputting preset alarm information so that corresponding workers can carry out fault maintenance on the semiconductor coating equipment.

In a second aspect, an embodiment of the present invention provides a temperature adjustment device in a semiconductor coating apparatus, where the temperature adjustment device includes:

the acquisition module is used for acquiring the information of the wafer with unqualified film thickness after the wafer in the battery is subjected to a film coating process based on the process file;

the determining module is used for determining a target temperature zone to be adjusted in the process chamber based on the information of the wafer with unqualified film thickness and determining a corresponding temperature parameter adjusting scheme;

and the adjusting module is used for adjusting the temperature set value of the display thermocouple and/or the control thermocouple of the target temperature zone to be adjusted in the process chamber based on the temperature parameter adjusting scheme, updating the process file according to the adjusted temperature set value, and performing a film coating process on the wafer to be coated based on the updated process file.

Optionally, the determining module is configured to:

acquiring film thickness data of the unqualified wafer based on the information of the unqualified film thickness wafer;

acquiring a deviation value between the film thickness of the unqualified wafer and the reference film thickness in the target temperature zone according to the film thickness data of the unqualified wafer;

based on the deviation value, a corresponding temperature parameter adjustment scheme is determined.

Optionally, the determining module is configured to:

acquiring a maximum deviation value and a minimum deviation value in the deviation values;

determining the corresponding temperature parameter adjustment scheme based on the maximum deviation value and the minimum deviation value.

Optionally, the determining module is configured to:

under the condition that the maximum deviation value and the minimum deviation value are both in a preset adjustable range, if the minimum deviation value is larger than 0 or the maximum deviation value is smaller than 0, the temperature parameter adjusting scheme is a scheme for adjusting the display thermocouple in a constant temperature step;

determining a first temperature parameter in the temperature parameter adjustment scheme based on the maximum deviation value and the minimum deviation value;

the adjusting module is configured to:

and adjusting the temperature set value of the display thermocouple of the target temperature zone to be adjusted in the process chamber based on the first temperature parameter in the temperature parameter adjustment scheme.

Optionally, the determining module is configured to:

under the condition that the maximum deviation value and the minimum deviation value are both in a preset adjustable range, if the minimum deviation value is smaller than 0 and the maximum deviation value is larger than 0, the temperature parameter adjusting scheme is a scheme for adjusting the lower limit value of the temperature of the control thermocouple in the deposition step;

determining a second temperature parameter in the temperature parameter adjustment scheme based on the maximum deviation value and the minimum deviation value;

the adjusting module is configured to:

and adjusting the lower limit value of the temperature of the control thermocouple of the target temperature zone to be adjusted in the process chamber in the deposition step based on the second temperature parameter in the temperature parameter adjustment scheme.

Optionally, the determining module is configured to:

under the condition that the maximum deviation value and the minimum deviation value are both in a preset adjustable range, if any one of the minimum deviation value and the maximum deviation value is 0 and the other one is not 0, the temperature parameter adjusting scheme is a scheme for adjusting the upper limit value of the temperature of the control thermocouple in the constant temperature step;

determining a third temperature parameter in the temperature parameter adjustment scheme based on the minimum deviation value and the maximum deviation value;

the adjusting module is configured to:

and adjusting the upper limit value of the temperature of the control thermocouple of the target temperature zone to be adjusted in the process chamber in a constant temperature step based on the third temperature parameter in the temperature parameter adjustment scheme.

Optionally, the determining module is configured to:

determining that the temperature parameter adjustment scheme is an equipment fault alarm scheme under the condition that one of the maximum deviation value and the minimum deviation value is not in the preset adjustable range;

the adjusting module is configured to:

and outputting preset alarm information so that corresponding workers can carry out fault maintenance on the semiconductor coating equipment.

In a third aspect, an embodiment of the present invention provides a semiconductor coating apparatus, including: an upper computer, a lower computer, a furnace tube, a display thermocouple, a control thermocouple and a process chamber, wherein,

the upper computer is used for obtaining the information of the wafer with unqualified film thickness after the wafer in the battery is subjected to a film coating process based on the process file; determining a target temperature zone to be adjusted in the process chamber based on the information of the wafer with unqualified film thickness, and determining a corresponding temperature parameter adjustment scheme; adjusting the temperature set value of a display thermocouple and/or a control thermocouple of the target temperature zone to be adjusted in the process chamber based on the temperature parameter adjustment scheme, and updating the process file according to the adjusted temperature set value;

the lower computer is connected with the upper computer and corresponds to the furnace tube, and the lower computer is used for performing a coating process on the wafer to be coated based on the updated process file.

Optionally, the upper computer is further configured to:

acquiring film thickness data of the unqualified wafer based on the information of the unqualified film thickness wafer;

acquiring a deviation value between the film thickness of the unqualified wafer and the reference film thickness in the target temperature zone according to the film thickness data of the unqualified wafer;

based on the deviation value, a corresponding temperature parameter adjustment scheme is determined.

Optionally, the upper computer is further configured to:

acquiring a maximum deviation value and a minimum deviation value in the deviation values;

determining the corresponding temperature parameter adjustment scheme based on the maximum deviation value and the minimum deviation value.

According to the technical scheme provided by the embodiment of the invention, after the wafer in the battery is subjected to the film coating process based on the process file, the information of the wafer with unqualified film thickness is obtained, the target temperature zone to be adjusted in the process chamber is determined based on the information of the wafer with unqualified film thickness, the corresponding temperature parameter adjustment scheme is determined, the temperature set value of the display thermocouple and/or the control thermocouple of the target temperature zone to be adjusted in the process chamber is adjusted based on the temperature parameter adjustment scheme, the process file is updated according to the adjusted temperature set value, and the film coating process is performed on the wafer to be coated based on the updated process file. Therefore, only the information of the wafer with unqualified film thickness needs to be acquired, the process file can be updated, the film coating process is carried out on the wafer to be coated based on the updated process file, the problem of high labor cost caused by participation of a technician is avoided, the working efficiency of the film coating process on the battery can be improved, in addition, the problem of low updating accuracy of the process file caused by manual experience of the technician can be avoided, and the qualification rate of the film coating process is improved.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below, it is obvious that the drawings in the following description are only some embodiments described in the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.

FIG. 1 is a schematic flow chart illustrating a temperature adjustment method in a semiconductor coating apparatus according to the present invention;

FIG. 2 is a schematic view of a process chamber of a semiconductor coating apparatus;

FIG. 3 is a schematic flow chart illustrating a temperature adjustment method in another semiconductor coating apparatus according to the present invention;

FIG. 4 is a schematic structural diagram of a temperature adjustment device in a semiconductor coating apparatus according to the present invention.

Detailed Description

The embodiment of the invention provides a temperature adjusting method in semiconductor coating equipment and the semiconductor coating equipment.

In order to make those skilled in the art better understand the technical solution of the present invention, the technical solution in the embodiment of the present invention will be clearly and completely described below with reference to the drawings in the embodiment of the present invention, and it is obvious that the described embodiment is only a part of the embodiment of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.