阅读说明：本技术 一种高阻抗膜及其制备方法 (High-impedance film and preparation method thereof ) 是由 夏伟 张兵 郑建军 张成金 姚仕军 方添志 赵帅 于 2019-12-06 设计创作，主要内容包括：本发明提供了一种高阻抗膜的制备方法,该方法包括如下步骤：采用磁控溅射法在玻璃基板上镀膜,所用靶材为含铟复合材料,溅射室的压强抽到1.5-3.5×10<Sup>-3</Sup>Pa,工作气体为氩气,溅射压强为0.3-1.0Pa。本发明所述的高阻抗膜具有较高的表面电阻值、较好的防静电效果和较好的抗干扰效果。(The invention provides a preparation method of a high-impedance film, which comprises the following steps: coating on glass substrate by magnetron sputtering method, wherein the target is indium-containing composite material, and the pressure in sputtering chamber is 1.5-3.5 × 10 ‑3 Pa, argon as working gas, and 0.3-1.0Pa as sputtering pressure. The high-impedance film has the advantages of higher surface resistance value, better anti-static effect and better anti-interference effect.)

1. A preparation method of a high-impedance film is characterized by comprising the following steps: the method comprises the following steps:

coating on a glass substrate by magnetron sputtering, wherein the target is an indium-containing composite material, and the sputtering chamberPumping to 1.5-3.5X 10^-3Pa, argon as working gas, and 0.3-1.0Pa as sputtering pressure.

2. The method for producing a high-resistance film according to claim 1, characterized in that: the sputtering time is 3-10 min; preferably, the sputtering time is 7min, and a thin film with the thickness of 5-7nm is formed.

3. The method for producing a high-resistance film according to claim 1, characterized in that: the sputtering power is 40-100W; preferably, the power of the sputtering is 80W.

4. The method for producing a high-resistance film according to claim 1, characterized in that: the sputtering distance is 5-10cm, and the sputtering mode is direct current sputtering.

5. The method for producing a high-resistance film according to claim 1, characterized in that: the concentration of argon is 99.99%.

6. The method for producing a high-resistance film according to claim 1, characterized in that: the indium-containing composite material is indium tin oxide, and preferably, the indium-containing composite material is an indium tin oxide ceramic target.

7. A high-resistance film produced by the production method according to any one of claims 1 to 6.

Technical Field

The invention relates to the technical field of thin films, in particular to a high-impedance film and a preparation method thereof.

Background

The high-resistance film with high-impedance characteristic has wide application, can be applied to electronic devices, can shield the electronic devices from static electricity after being grounded, can also be applied to liquid crystal displays, can be used as a control element to control the conduction of certain directions and the disconnection of certain directions, and can also be used as an electrode. However, the performance of the existing high-impedance film is general, and especially when the film is applied to a touch screen, the film has small surface resistance and poor anti-interference effect, or the film has poor anti-static effect, so that the use effect of the touch screen is limited.

Disclosure of Invention

In view of this, the present invention is directed to a high-impedance film with a high surface resistance value, a good anti-static effect, and a good anti-interference effect, and a method for manufacturing the same.

In order to achieve the purpose, the technical scheme of the invention is realized as follows:

a method for preparing a high-impedance film comprises the following steps:

coating on glass substrate by magnetron sputtering method, wherein the target is indium-containing composite material, and the pressure in sputtering chamber is 1.5-3.5 × 10^-3Pa, argon as working gas, and 0.3-1.0Pa as sputtering pressure.

Further, the sputtering time is 3-10 min; preferably, the sputtering time is 7min, and a thin film with the thickness of 5-7nm is formed.

Further, the power of the sputtering is 40-100W; preferably, the power of the sputtering is 80W.

Further, the sputtering distance is 5-10cm, and the sputtering mode is direct current sputtering.

Further, the concentration of the argon is 99.99 percent

Further, the indium-containing composite material is indium tin oxide, and preferably, the indium-containing composite material is an indium tin oxide ceramic target.

The invention also provides a high-impedance film prepared by the preparation method.

Compared with the prior art, the high-impedance film has the following advantages:

(1) the resistance value of the square resistor of the high-impedance film is higher and is 10⁸-10¹⁰Europe has better antistatic effect and better anti-interference effect, and the transmittance can reach more than 98 percent in the visible light range, thereby improving the definition and the energy of pictures.

(2) The sputtering time is preferably 7min, the sputtering power is preferably 80W, and the thin film with high sheet resistance and high transmittance can be obtained under the sputtering time and the sputtering power.

Detailed Description

It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.

The present invention will be described in detail with reference to examples.