阅读说明：本技术 一种蒸发镀制石墨相cn薄膜的方法 (Method for evaporating graphite phase CN film ) 是由 沈洪雪 姚婷婷 李刚 金克武 王天齐 陆勇 时君 于 2019-12-25 设计创作，主要内容包括：本发明公开一种蒸发镀制石墨相CN薄膜的方法,包括以下步骤：a、采用单晶硅片作为衬底,清洗衬底,去除衬底表面污渍；b、将衬底置于蒸发镀膜腔室内,采用99.99%纯度的氮化碳粉为蒸发源,在衬底表面蒸发镀制CN薄膜；c、将镀制了CN薄膜的衬底放入退火炉,在400～600℃的温度下真空退火3小时,然后自然冷却至常温,得到所述石墨相CN薄膜；该方法利用蒸发沉积直接得到高纯度的CN薄膜,且薄膜的均匀化好,能够提高薄膜质量。(The invention discloses a method for evaporating and plating a graphite phase CN film, which comprises the following steps: a. cleaning a substrate by using a monocrystalline silicon wafer as the substrate, and removing stains on the surface of the substrate; b. placing the substrate in an evaporation coating chamber, and performing evaporation coating on the surface of the substrate to form a CN thin film by using 99.99% pure carbon nitride powder as an evaporation source; c. putting the substrate plated with the CN thin film into an annealing furnace, carrying out vacuum annealing at the temperature of 400-600 ℃ for 3 hours, and then naturally cooling to normal temperature to obtain the graphite-phase CN thin film; the method directly obtains the high-purity CN thin film by evaporation deposition, has good homogenization of the thin film, and can improve the quality of the thin film.)

1. A method for evaporating and plating a graphite phase CN film is characterized by comprising the following steps:

a. cleaning a substrate by using a monocrystalline silicon wafer as the substrate, and removing stains on the surface of the substrate;

b. placing the substrate in an evaporation coating chamber, and performing evaporation coating on the surface of the substrate to form a CN thin film by using 99.99% pure carbon nitride powder as an evaporation source;

c. and putting the substrate plated with the CN thin film into an annealing furnace, carrying out vacuum annealing at the temperature of 400-600 ℃ for 3 hours, and then naturally cooling to the normal temperature to obtain the graphite-phase CN thin film.

Technical Field

The invention relates to the technical field of special film preparation, in particular to a method for preparing a graphite phase CN film by evaporation plating.

Background

Cohen et al, starting from the crystal structure, predict that the hardness of carbon nitride will exceed that of diamond, which is the first prediction of scientists and verified in later experiments, and is of great significance. Teter et al calculated five compound structures of carbon nitride, which was once considered a new material.

However, the preparation of CN thin films is very difficult, and many researchers at the early stage successfully prepare CN thin films, but the problems of unstable N content and difficult incorporation of N into the thin films are prominent, and the prepared thin films are basically in amorphous states, which further limits the application of the subsequent CN thin films. In recent years, various techniques such as magnetron sputtering, reactive radio frequency sputtering, ion beam sputtering, hot wire CVD, etc. have been used to produce carbon nitride films, and have achieved some results, but the results have not been satisfactory.

Disclosure of Invention

The invention aims to provide a method for preparing a graphite phase CN thin film by evaporation plating, which directly obtains a high-purity CN thin film by evaporation deposition, has good homogenization of the thin film and can improve the quality of the thin film.

The technical scheme adopted by the invention for solving the technical problems is as follows:

a method for evaporating and plating a graphite phase CN film comprises the following steps:

a. cleaning a substrate by using a monocrystalline silicon wafer as the substrate, and removing stains on the surface of the substrate;

b. placing the substrate in an evaporation coating chamber, and performing evaporation coating on the surface of the substrate to form a CN thin film by using 99.99% pure carbon nitride powder as an evaporation source;

c. and putting the substrate plated with the CN thin film into an annealing furnace, carrying out vacuum annealing at the temperature of 400-600 ℃ for 3 hours, and then naturally cooling to the normal temperature to obtain the graphite-phase CN thin film.

The invention has the beneficial effects that:

firstly, evaporating the carbon nitride powder by the high vacuum degree of evaporation equipment so as to directly obtain a high-purity CN thin film, wherein the vacuum degree of an evaporation chamber can reach 10^－6PaThe chamber is clean, no pollution, and the plated film has high quality.

And in the whole evaporation process, carbon nitride is used as a raw material, evaporation plating is directly carried out, the method is simple, other variables are not introduced, and the quality of the film is ensured.

And thirdly, vacuum heat preservation annealing is carried out, so that the purposes of homogenizing the film and improving the quality of the film are achieved.

Detailed Description