Film forming apparatus and method for manufacturing electronic device
阅读说明:本技术 成膜装置及电子器件的制造方法 (Film forming apparatus and method for manufacturing electronic device ) 是由 菅原洋纪 内田敏治 于 2019-07-02 设计创作,主要内容包括:本发明提供一种能够提高靶材料的利用率的技术。成膜装置(1)具备:配置有成膜对象物(10)及靶(30)的腔室(2);及配置在腔室(2)内的隔着靶(3)而与成膜对象物(10)对置的位置的磁场产生机构(31),成膜装置(1)的特征在于,具有:沿着靶(30)的长度方向排列配置的多个导电构件(4A、4B);及对多个导电构件(4A、4B)中的至少一个施加电位,以使多个导电构件(4A、4B)中的至少两个导电构件的电位不同的电位施加机构(26A、26B)。(The present invention provides a technique capable of improving the utilization rate of a target material. A film forming apparatus (1) is provided with: a chamber (2) in which an object (10) to be film-formed and a target (30) are disposed; and a magnetic field generation mechanism (31) disposed in the chamber (2) at a position facing the object (10) to be film-formed with the target (3) therebetween, the film-forming apparatus (1) being characterized by comprising: a plurality of conductive members (4A, 4B) arranged in a row along the longitudinal direction of the target (30); and a potential applying mechanism (26A, 26B) for applying a potential to at least one of the plurality of conductive members (4A, 4B) so that the potentials of at least two of the plurality of conductive members (4A, 4B) are different.)
1. A film forming apparatus includes:
a chamber in which a film formation object and a target are arranged; and
a magnetic field generating mechanism disposed in the chamber at a position facing the object to be film-formed with the target interposed therebetween,
the film forming apparatus is characterized by comprising:
a plurality of conductive members arranged in a row along a longitudinal direction of the target; and
a potential applying mechanism that applies a potential to at least one of the plurality of conductive members so as to make potentials of at least two of the plurality of conductive members different.
2. The film forming apparatus according to claim 1,
the plurality of conductive members includes at least three conductive members arranged in a row along a longitudinal direction of the target.
3. The film forming apparatus according to claim 2,
the potential applying mechanism applies a potential such that a potential of the conductive member corresponding to a central portion of the target among the plurality of conductive members is higher than potentials of the conductive members corresponding to both ends of the target.
4. A film forming apparatus includes:
a chamber in which a film formation object and a target are arranged; and
a magnetic field generating mechanism disposed in the chamber at a position facing the object to be film-formed with the target interposed therebetween,
the film forming apparatus is characterized by comprising:
a conductive member that is opposed to the target in a region of a part of a surface of the target in a longitudinal direction; and
a potential applying mechanism that applies a potential to the conductive member.
5. The film forming apparatus according to claim 4,
the partial region is a portion that is offset from both longitudinal ends of the surface of the target.
6. The film forming apparatus according to claim 5,
the partial region is a central portion in a longitudinal direction of the surface of the target.
7. The film forming apparatus according to claim 4,
the partial region is at least one of both ends of the surface of the target in the longitudinal direction.
8. The film forming apparatus according to any one of claims 1 to 7,
the film forming apparatus includes:
a surface shape measuring mechanism that measures a surface shape of the target; and
and a control unit that controls the potential applied by the potential applying unit based on the surface shape of the target measured by the surface shape measuring unit.
9. The film forming apparatus according to claim 8,
the surface shape measuring means measures the surface shape of a portion of the target that does not face the object to be film-formed.
10. The film forming apparatus according to any one of claims 1 to 7,
the film forming apparatus includes:
a film thickness distribution measuring unit that measures a film thickness distribution of a film formed on the object to be film-formed; and
and a control unit that controls the potential applied by the potential applying unit based on the film thickness distribution of the film measured by the film thickness distribution measuring unit.
11. The film forming apparatus according to any one of claims 1 to 7,
the conductive member constitutes an adhesion preventing member.
12. The film forming apparatus according to any one of claims 1 to 7,
the target is cylindrical, and the film forming apparatus further includes a rotating mechanism for rotating the target.
13. The film forming apparatus according to any one of claims 1 to 7,
the film forming apparatus includes a plurality of cathode units in the chamber, the cathode units include the magnetic field generating mechanism and the target, and the magnetic field generating mechanism is disposed inside the target.
14. A method for manufacturing an electronic device, comprising a sputtering film formation step of disposing a film formation object in a chamber and depositing sputtering particles flying from a target disposed to face the film formation object to form a film,
the sputtering film formation step is a step of forming a film in a state in which a spatial potential distribution around the target in a cross section perpendicular to a longitudinal direction of the target is different between a central portion and an end portion of the target.
15. The method of manufacturing an electronic device according to claim 14,
the sputtering film formation step is a step of forming a film in a state in which a spatial potential distribution around the target in a cross section perpendicular to a longitudinal direction of the target is made different between a central portion and an end portion of the target by applying a potential to a conductive member disposed around the target.
16. The method of manufacturing an electronic device according to claim 15,
a plurality of the conductive members are arranged along the longitudinal direction of the target,
in the sputtering film formation step, a potential is applied to at least one of the plurality of conductive members so that potentials of at least two of the plurality of conductive members are different from each other.
17. The method of manufacturing an electronic device according to claim 15,
the conductive member is disposed at a central portion in a longitudinal direction of the target.
18. The method of manufacturing an electronic device according to claim 16,
the conductive members are disposed at both ends of the target in the longitudinal direction.
Technical Field
The present invention relates to a film forming apparatus and a method of manufacturing an electronic device.
Background
Sputtering is known as a method for forming a thin film made of a material such as a metal or a metal oxide on a film formation object such as a substrate or a laminate formed on a substrate. A sputtering apparatus for forming a film by a sputtering method has a structure in which a target made of a film forming material is disposed to face an object to be film formed in a vacuum chamber. When a negative voltage is applied to the target, the surface of the target is sputtered with an inert gas element ionized by generating plasma in the vicinity of the target, and the emitted sputtering particles are deposited on the object to be film-formed to form a film. Also, a magnetron sputtering method is known in which a magnet is disposed on the rear surface of a target (inside the target in the case of a cylindrical target) and sputtering is performed by increasing the electron density near the cathode by a generated magnetic field.
In a film forming apparatus (also referred to as a sputtering apparatus or a sputtering apparatus) of a magnetron sputtering method, there is known an apparatus configuration for forming a film by rotating a target (rotating cathode) formed in a cylindrical shape (patent document 1). In this configuration, by rotating the cylindrical target surrounding the outer periphery of the fixed magnet unit, sputtering can be performed while changing the portion of the target surface exposed to the high-density plasma formed by the magnetic field generated by the magnet unit. This makes it possible to equalize the consumption of the target in the circumferential direction, and to realize consumption of the target material with less waste.
[ Prior Art document ]
[ patent document ]
[ patent document 1 ] Japanese patent laid-open publication No. 2013-237913
Disclosure of Invention
[ problem to be solved by the invention ]
In the magnetron sputtering method, a leakage magnetic field leaking from the rear surface (inner surface) toward the front surface (outer surface) of the target is formed by the magnet unit, but an elliptical colloidal magnetic field tunnel extending in the longitudinal direction of the target is generally formed. Electrons are confined by the magnetic field tunnel, and the orbit of the confined electrons is formed into an elliptical shape extending in the longitudinal direction of the target. At this time, the target is sputtered more in a portion where the curvature of the ellipse is large, that is, in the vicinity of the longitudinal end portion of the target, than in a portion where the curvature of the ellipse is small, that is, a portion corresponding to the longitudinal center portion of the target. Therefore, the consumption of the target material near the end portions of the target length is locally increased as compared with the central portion of the target length, and the consumption distribution of the target material may become uneven along the target length direction. Since the target life is determined based on a portion that is largely consumed, the target material is sufficiently left in the center portion of the length, but the target has to be replaced, and effective use of the target material may be difficult.
The present invention has been made in view of the above problems, and an object thereof is to provide a technique capable of improving the target utilization rate.
[ MEANS FOR solving PROBLEMS ] A method for solving the problems
A film forming apparatus according to an aspect of the present invention includes: a chamber in which a film formation object and a target are arranged; and a magnetic field generating mechanism disposed at a position facing the object to be film-formed via the target in the chamber, the film forming apparatus including: a plurality of conductive members arranged in a row along a longitudinal direction of the target; and a potential applying mechanism that applies a potential to at least one of the plurality of conductive members so that potentials of at least two of the plurality of conductive members are different.
In addition, a film deposition apparatus according to another aspect of the present invention includes: a chamber in which a film formation object and a target are arranged; and a magnetic field generating mechanism disposed at a position facing the object to be film-formed via the target in the chamber, the film forming apparatus including: a conductive member that is opposed to the target in a region of a part of a surface of the target in a longitudinal direction; and a potential applying mechanism that applies a potential to the conductive member.
In addition, a method for manufacturing an electronic device according to another aspect of the present invention includes a sputtering film forming step of disposing a film formation object in a chamber and depositing sputtering particles flying from a target disposed to face the film formation object to form a film, wherein the sputtering film forming step is a step of forming the film in a state where a spatial potential distribution around the target in a cross section perpendicular to a longitudinal direction of the target is different between a central portion and an end portion of the target.
[ Effect of the invention ]
According to the present invention, the target utilization rate can be improved.
Drawings
Fig. 1 is a schematic cross-sectional view of a film formation apparatus according to example 1 of the present invention.
Fig. 2 is a schematic cross-sectional view showing the structure of a target driving apparatus according to embodiment 1 of the present invention.
Fig. 3 is a schematic view showing the structure of an adhesion preventing member according to embodiment 1 of the present invention.
Fig. 4 is a graph showing the experimental results regarding the relationship between the magnitude of the applied potential and the film formation rate ratio.
Fig. 5 is a schematic cross-sectional view showing a state of a local consumed portion of the target.
Fig. 6 is a graph showing the experimental results of the temporal change in the film thickness distribution in the rotating cathode.
Fig. 7 is a schematic view showing the structure of an adhesion preventing member according to a modification example of embodiment 1 of the present invention.
FIG. 8 is a schematic cross-sectional view of a film forming apparatus according to example 2 of the present invention.
[ description of reference ]
1 … film forming device, 10 … substrate, 11 … film forming surface, 2 … sputtering chamber, 3 … cathode unit, 30 … target, 31 … magnet unit, 32 … casing (cathode electrode), 4A, 4B … anti-adhesion plate, 26A, 26B … power supply, 5 … control part
Detailed Description
Preferred embodiments and examples of the present invention will be described below with reference to the accompanying drawings. However, the following embodiments and examples merely illustrate preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. In the following description, the hardware configuration and software configuration of the device, the flow of the process, the manufacturing conditions, the size, the material, the shape, and the like are not intended to limit the scope of the present invention to these unless otherwise specifically stated.
(example 1)
< film Forming apparatus >
A film deposition apparatus according to example 1 of the present invention will be described with reference to fig. 1 to 6. The film deposition apparatus of this embodiment is a magnetron sputtering apparatus in which a magnet unit is disposed inside a cylindrical target. The film forming apparatus of the present embodiment is used for depositing and forming a thin film on a substrate (including a structure in which a laminate is formed on a substrate) in the production of various electronic devices such as a semiconductor device, a magnetic device, and an electronic component, an optical component, and the like. More specifically, the film formation apparatus of the present embodiment is preferably used for manufacturing electronic devices such as a light-emitting element, a photoelectric conversion element, and a touch panel. Among these, the film forming apparatus of the present embodiment is particularly preferably applicable to the production of organic light emitting elements such as organic EL (organic electroluminescence) elements and organic photoelectric conversion elements such as organic thin film solar cells. The electronic device of the present invention also includes a display device (for example, an organic EL display device) or a lighting device (for example, an organic EL lighting device) including a light-emitting element, and a sensor (for example, an organic CMOS image sensor) including a photoelectric conversion element. The film formation apparatus of the present embodiment can be used as a part of a film formation system including a vapor deposition apparatus and the like.
The film forming apparatus of the present embodiment is used for manufacturing an organic EL device, for example. In the case of an organic EL element, an anode, a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer, an electron injection layer, and a cathode are generally formed in this order on a substrate. The film forming apparatus of the present embodiment can be preferably used for forming an electron injection layer or a laminated film of a metal or a metal oxide used for an electrode (cathode) on an organic film by sputtering. The film formation on the organic film is not limited to the above, and the film formation may be performed on various surfaces by lamination as long as the film formation is performed by a combination of materials such as a metal material and an oxide material which can be formed by sputtering.
Fig. 1 is a schematic side sectional view showing the overall configuration of the film formation apparatus according to the present embodiment. Fig. 2 is a schematic cross-sectional view showing the structure of the target driving device of the present embodiment. Fig. 3 is a schematic view showing the structure of the adhesion preventing member of the present embodiment. Fig. 4 is a graph showing the experimental results regarding the relationship between the magnitude of the potential applied to the deposition preventing plate and the film formation ratio of the sputtered film (without the deposition preventing plate). Fig. 5 is a schematic cross-sectional view showing a case of local consumption of the target. Fig. 6 is a graph showing the experimental results of the temporal change in the film thickness distribution in the rotating cathode.
As shown in fig. 1, a film deposition apparatus (sputtering apparatus) 1 of the present embodiment includes a sputtering chamber (film deposition chamber) 2 as a chamber, a
As shown in fig. 2, the
< sputtering Chamber and cathode Unit >
As shown in fig. 1 and 2, the sputtering
The
Examples of the material of the
The
< sputtering >
By the formation of the sputtering atmosphere, the application of voltage from the
As shown in fig. 2 (a), the
Fig. 2 (b) is a schematic cross-sectional view showing the structure of a drive mechanism for rotating the
On the other hand, the
The
< features of the present embodiment >
As shown in fig. 1 and 3, the film formation apparatus 1 of the present embodiment includes, as a characteristic configuration of the present embodiment, adhesion preventing plates 4(4A, 4B) divided in a longitudinal direction of a
The
The adhesion preventing plate 4 is made of a member having conductivity (for example, a metal plate such as SUS), and can be controlled to a predetermined potential by applying a potential from a connected power source 26. With the above configuration, the film formation rate of the thin film formed on the
Fig. 4 is a graph plotting the ratio of the film formation rate when the deposition preventing plate 4 is provided and a predetermined potential is applied to the film formation rate when the deposition preventing plate 4 is not provided with respect to the film formation rate when the
Fig. 5 is a schematic cross-sectional view illustrating a case where the consumption of the target material described in the background art section is locally increased at the end of the target length. A plasma region P is generated in the vicinity of the surface of the
Fig. 6 is a graph showing the results of an experiment in which the temporal change in film thickness corresponding to a target length position is measured, with the horizontal axis representing the target length position (0 mm in the center of the length) and the vertical axis representing the film thickness of a thin film formed on a substrate. In the initial stage of use (5 hours), the film thickness was substantially uniform in length, but the film thickness at the center of the length was reduced thereafter, whereas the film thickness at the ends of the length was increased. That is, it is known that the degree of consumption of the
As shown in fig. 3, in the present embodiment, the
Specifically, in the control of the potential applied to the adhesion preventing plate 4 in the present embodiment, the potential applied to the adhesion preventing plate 4a2 facing the longitudinal center portion of the
The film deposition apparatus 1 of the present embodiment includes displacement meters 8(81, 82, 83) as surface shape measurement means for measuring the thickness of the
The film deposition apparatus 1 of the present embodiment includes a displacement meter 9 as film thickness distribution measuring means for measuring the film thickness of a film deposited on a
Therefore, in the present embodiment, the applied potential of the adhesion preventing plate 4 divided in the longitudinal direction can be controlled based on either (i) the surface shape of the
The control of the applied potential of the adhesion preventing plate 4 can be performed by various methods. For example, the method of controlling the applied potentials of both the pair of
< modification example >
Fig. 7 (a) is a schematic view showing the structure of the adhesion preventing member according to modification 1 of the present embodiment. As shown in the figure, only the anti-adhesion plate 4a2 at the center of the length is connected to the power supply 26a2, and potential application control is enabled. The anti-adhesion plates 4a1 and 4A3 at both longitudinal ends may be set to the same potential (ground potential) as the sputtering chamber 2 (chamber). By reducing the number of power supplies compared to example 1 and appropriately controlling the central anti-adhesion plate 4a2, the same effects as in example 1 can be expected.
Fig. 7 (b) is a schematic view showing the structure of the adhesion preventing member according to
Fig. 7 (c) is a schematic view showing the structure of the adhesion preventing member according to
(example 2)
Referring to FIG. 8, a
As shown in fig. 8, in the
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