Substrate-carrier structure

文档序号:1760027 发布日期:2019-11-29 浏览:23次 中文

阅读说明:本技术 基板-载体结构 (Substrate-carrier structure ) 是由 沙恩·布劳恩 乔纳森·孔茨 乔舒亚·奥曼 约瑟夫·温德尔 奥斯汀·默尼 汤姆·格茨 于 2018-02-28 设计创作,主要内容包括:本发明涉及一种基板-载体结构及其在纳米级工艺(例如沉积和/或生长工艺)中的使用,其中基板可以是晶片。载体结构(1)包括在其前侧和/或背侧的沟槽(2,3)。(The present invention relates to a kind of substrate-carrier structure and its uses in nanoscaled process (such as deposition and/or growth technique), and wherein substrate can be chip.Carrier structure (1) includes on front side of it and/or the groove of back side (2,3).)

1. substrate-carrier structure, wherein the back side of carrier structure and/or front side include at least one groove.

2. substrate-carrier structure according to claim 1, wherein at least one groove radial direction and/or concentrically cloth It sets.

3. substrate-carrier structure according to claim 1 or 2, wherein when observing in cross-section, it is described at least one Groove has angular, rectangle or circular design.

4. substrate-carrier structure according to claim 1, wherein the depth that at least one described groove has is in substrate- In the range of the 1% to 90% of carrier structure overall thickness.

5. substrate-carrier structure according to claim 1, wherein the ratio between width over depth of at least one groove is small In 10.

6. substrate-carrier structure according to claim 1, wherein the front side of carrier structure also includes at least one bag.

7. substrate-carrier structure according to claim 6, wherein at least one described bag have it is flat, recess or The profile of protrusion.

8. substrate-carrier structure according to claim 6, wherein the diameter that at least one described bag has be 25 to 500mm。

9. substrate-carrier structure according to claim 1, wherein the carrier is by the material that selects from group consisting of Material is made: graphite, silicon carbide, the graphite coated with silicon carbide or the carbon-fiber reinforced carbon (CFRC) coated with silicon carbide or its Any mixture.

10. substrate-carrier structure according to claim 1 or 2 is for answering in extension, polycrystalline or amorphous growth manufacturing process With.

Embodiment

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