阅读说明：本技术 一种减反射膜及其生产工艺 (Antireflection film and production process thereof ) 是由 王军 何茵 于 2021-06-18 设计创作，主要内容包括：本发明提供了一种减反射膜,包括基层与设置在基层上的防反射层,所述防反射层包括AR膜层与AF膜层,所述AR膜层包括三层SiO2层与两层Nb2O5层,两层所述Nb2O5层分别夹在三层SiO2层之间,一侧的所述SiO2层固定在基层上,所述AF膜层固定在另一侧的SiO2层上；其生产工艺为通过A、清洗,B、镀AR膜,C、镀AF膜,D、存放检测,四个步骤完成生产。本发明具有如下有益效果：通过三层SiO2层与两层Nb2O5层叠加的AR膜与表面的AF膜,在保证手机屏幕具有优良的防油污性能与高的耐磨性能的前提下,进一步提高了手机屏幕的清晰度。(The invention provides an antireflection film, which comprises a base layer and an antireflection layer arranged on the base layer, wherein the antireflection layer comprises an AR film layer and an AF film layer, the AR film layer comprises three SiO2 layers and two Nb2O5 layers, the two Nb2O5 layers are respectively clamped between the three SiO2 layers, the SiO2 layer on one side is fixed on the base layer, and the AF film layer is fixed on the SiO2 layer on the other side; the production process comprises the steps of A, cleaning, B, AR film plating, C, AF film plating, D, storage and detection, and the production is finished. The invention has the following beneficial effects: by the aid of the AR film formed by overlapping the three SiO2 layers and the two Nb2O5 layers and the AF film on the surface, the definition of the mobile phone screen is further improved on the premise that the mobile phone screen is guaranteed to have excellent oil stain resistance and high wear resistance.)

1. An antireflection film comprising a base layer and an antireflection layer provided on the base layer, characterized in that: the anti-reflection layer comprises an AR film layer and an AF film layer, the AR film layer comprises three layers of SiO2 layers and two layers of Nb2O5 layers, the two layers of Nb2O5 layers are respectively clamped between the three layers of SiO2 layers, the SiO2 layer on one side is fixed on the base layer, and the AF film layer is fixed on the SiO2 layer on the other side.

2. An antireflection film as defined in claim 1, wherein: the thickness of the SiO2 layer fixed on the base layer is 5nm, the thickness of the SiO2 layer close to the AF film layer is 70.6nm, the thickness of the Nb2O5 layer close to the base layer is 12.6nm, the thickness of the Nb2O5 layer close to the AF film layer is 115.4nm, and the thickness of the SiO2 layer between the two Nb2O5 layers is 30.7 nm.

3. An antireflection film as defined in claim 2, wherein: the two Nb2O5 layers are in a biconvex lens shape, and the SiO2 layer between the two Nb2O5 layers is in a biconcave lens shape; the other two SiO2 layers are both in the shape of a single concave lens, and the concave side of the single concave lens is close to the Nb2O5 layer.

4. An antireflection film as defined in claim 3, wherein: the difference between the thickest part and the thinnest part of the two Nb2O5 layers is 10 +/-2 nm, the difference between the thickest part and the thinnest part of the SiO2 layer between the two Nb2O5 layers is 10 +/-2 nm, and the difference between the thickest part and the thinnest part of the other two SiO2 layers is 5 +/-1 nm.

5. An antireflection film as defined in claim 1, wherein: the thickness of the AF film layer is 18-30 nm.

6. A production process of an antireflection film is characterized by comprising the following steps: the method comprises the following steps:

A. cleaning: firstly, cleaning for one time, putting the substrate into the vacuum chamber, pumping out air in the vacuum chamber to ensure that the vacuum degree in the vacuum chamber is less than or equal to 5.0 x 10-3Pa, and finally cleaning for one time;

B. plating an AR film: continuously pumping air out of the vacuum chamber to ensure that the vacuum degree in the vacuum chamber is less than or equal to 3.5 x 10 < -3 > Pa, then plating a film, discharging argon and oxygen during film plating, keeping the vacuum degree in the vacuum chamber to be less than or equal to 0.5 +/-0.3 Pa, plating a SiO2 layer on the base layer, plating a Nb2O5 layer, repeatedly plating a SiO2 layer and a Nb2O5 layer, and finally plating a SiO2 layer;

C. coating an AF film: firstly, pumping out air in a vacuum chamber to ensure that the vacuum degree of the vacuum chamber is less than or equal to 3.0 x 10-3Pa, and then plating an AF film;

D. storage and detection: the finished product is moved out of the vacuum chamber, then is kept stand, and finally is detected and stored.

7. The process for producing an antireflection film according to claim 6, wherein: when the protruding position of the Nb2O5 layer is plated in the step B, two shielding plates are arranged at two sides of the base layer for shielding, and the two shielding plates can slowly and mutually separate; and when the sunken position of SiO2 layer is plated, set up a shielding plate in basic unit middle part position and shelter from, just the shielding plate can slowly keep away from the basic unit.

8. The process for producing an antireflection film according to claim 6, wherein: the step A comprises the following steps:

a1, manual cleaning: before the product is put into the vacuum cleaner, the vacuum cleaner is firstly adopted for cleaning, and then the dust-free cloth is adopted for cleaning;

a2, vacuum cleaning: after the vacuum chamber is evacuated, the cleaning method is ion cleaning.

9. The process for producing an antireflection film according to claim 7, wherein: and B, in the step A, air in the vacuum chamber is pumped out to be subjected to rough vacuum pumping and fine vacuum pumping, rough vacuum pumping is firstly carried out to ensure that the pressure in the vacuum chamber is less than or equal to 8Pa, the rough vacuum pumping time is controlled within 8-15min, and then fine vacuum pumping is carried out to ensure that the pressure in the vacuum chamber is less than or equal to 5.0 x 10-3 Pa.

10. The process for producing an antireflection film according to claim 6, wherein: the argon gas is discharged at a rate of 160 + -50 sccm, and the oxygen gas is discharged at a rate of 250 + -50 sccm.

Technical Field

The invention relates to the technical field of antireflection film production, in particular to an antireflection film and a production process thereof.

Background

The antireflection of glass means that the reflectivity of the surface of the glass is reduced, and the reduction of the reflectivity can play a role in increasing the transmittance of the glass, which affects the picture quality of a screen in the screen.

The AF film has excellent oil stain resistance, excellent transmittance, and high abrasion resistance, and is commonly used for a mobile phone screen, while the AR film has more excellent transmittance than the AF film, and is commonly used for lenses.

Disclosure of Invention

Aiming at the defects in the prior art, the invention provides the antireflection film and the production process thereof, which improve the picture quality of a screen and ensure the excellent oil stain resistance and high wear resistance of the surface of the mobile phone screen.

According to the embodiment of the invention, the antireflection film comprises a base layer and an antireflection layer arranged on the base layer, wherein the antireflection layer comprises an AR film layer and an AF film layer, the AR film layer comprises three SiO2 layers and two Nb2O5 layers, the two Nb2O5 layers are respectively sandwiched between the three SiO2 layers, the SiO2 layer on one side is fixed on the base layer, and the AF film layer is fixed on the SiO2 layer on the other side.

Further, the thickness of the SiO2 layer fixed on the base layer is 5nm, the thickness of the SiO2 layer close to the AF film layer is 70.6nm, the thickness of the Nb2O5 layer close to the base layer is 12.6nm, the thickness of the Nb2O5 layer close to the AF film layer is 115.4nm, and the thickness of the SiO2 layer between the two Nb2O5 layers is 30.7 nm.

Further, the two Nb2O5 layers are both in the shape of a biconvex lens, and the SiO2 layer between the two Nb2O5 layers is in the shape of a biconcave lens; the other two SiO2 layers are both in the shape of a single concave lens, and the concave side of the single concave lens is close to the Nb2O5 layer.

Further, the difference between the thickest part and the thinnest part of two Nb2O5 layers is 10 +/-2 nm, the difference between the thickest part and the thinnest part of the SiO2 layer between two Nb2O5 layers is 10 +/-2 nm, and the difference between the thickest part and the thinnest part of the other two SiO2 layers is 5 +/-1 nm.

Further, the thickness of the AF film layer is 18-30 nm.

The process for producing an antireflection film according to an embodiment of the present invention includes:

A. cleaning: firstly, cleaning for one time, putting the substrate into the vacuum chamber, pumping out air in the vacuum chamber to ensure that the vacuum degree in the vacuum chamber is less than or equal to 5.0 x 10-3Pa, and finally cleaning for one time;

B. plating an AR film: continuously pumping air out of the vacuum chamber to ensure that the vacuum degree in the vacuum chamber is less than or equal to 3.5 x 10 < -3 > Pa, then plating a film, discharging argon and oxygen during film plating, keeping the vacuum degree in the vacuum chamber to be less than or equal to 0.5 +/-0.3 Pa, plating a SiO2 layer on the base layer, plating a Nb2O5 layer, repeatedly plating a SiO2 layer and a Nb2O5 layer, and finally plating a SiO2 layer;

C. coating an AF film: firstly, pumping out air in a vacuum chamber to ensure that the vacuum degree of the vacuum chamber is less than or equal to 3.0 x 10-3Pa, and then plating an AF film;

D. storage and detection: the finished product is moved out of the vacuum chamber, then is kept stand, and finally is detected and stored.

Furthermore, when the protruding position of the Nb2O5 layer is plated in the step B, two shielding plates are arranged at two sides of the base layer for shielding, and the two shielding plates can slowly and mutually move away; and when the sunken position of SiO2 layer is plated, set up a shielding plate in basic unit middle part position and shelter from, just the shielding plate can slowly keep away from the basic unit.

Further, the step a includes:

a1, manual cleaning: before the product is put into the vacuum cleaner, the vacuum cleaner is firstly adopted for cleaning, and then the dust-free cloth is adopted for cleaning;

a2, vacuum cleaning: after the vacuum chamber is evacuated, the cleaning method is ion cleaning.

Further, in the step A, air in the vacuum chamber is pumped out and divided into rough vacuum pumping and fine vacuum pumping, the rough vacuum pumping is firstly carried out, so that the pressure in the vacuum chamber is less than or equal to 8Pa, the rough vacuum pumping time is controlled within 8-15min, and then the fine vacuum pumping is carried out, so that the pressure in the vacuum chamber is less than or equal to 5.0 x 10-3 Pa.

Further, the argon gas is discharged at a rate of 160 + -50 sccm, and the oxygen gas is discharged at a rate of 250 + -50 sccm.

The technical principle of the invention is as follows: the transmittance of the whole screen is increased by adopting the AR film formed by overlapping three SiO2 layers and two Nb2O5 layers, and then the oil stain resistance and high wear resistance of the screen are ensured by adopting the AF film on the surface.

Compared with the prior art, the invention has the following beneficial effects: by the aid of the AR film formed by overlapping the three SiO2 layers and the two Nb2O5 layers and the AF film on the surface, the definition of the mobile phone screen is further improved on the premise that the mobile phone screen is guaranteed to have excellent oil stain resistance and high wear resistance.

Drawings

Fig. 1 is a schematic view of the structure of an antireflection film in embodiment 1 of the present invention.

Fig. 2 is a flowchart of a production process of an antireflection film of embodiment 1 of the present invention.

Fig. 3 is a schematic structural view of an antireflection film in embodiment 2 of the present invention.

Fig. 4 is a schematic diagram of the projection position of the Nb2O5 plated layer of embodiment 2 of the present invention.

Fig. 5 is a schematic diagram of the recessed position of the SiO2 plated layer in embodiment 2 of the present invention.

In the above drawings: 100. a base layer; 200. an anti-reflection layer; 210. an AR film layer; 211. a layer of SiO 2; 212. a Nb2O5 layer; 220. an AF film layer; 300. a target; 310. a shielding plate.

Detailed Description

The technical solution of the present invention is further explained with reference to the drawings and the embodiments.

Example 1

The antireflection film shown in fig. 1 includes a base layer 100 and an antireflection layer 200 disposed on the base layer 100, and specifically, the antireflection layer 200 includes an AR film layer 210 and an AF film layer 220, where the AR film layer 210 includes three SiO2 layers 211 and two Nb2O5 layers 212, the two Nb2O5 layers 212 are respectively sandwiched between the three SiO2 layers 211, the SiO2 layer 211 on one side is attached to the base layer 100, and the AF film layer 220 is attached to the SiO2 layer 211 on the other side, and five SiO2 layers 211 and the Nb2O5 layers 212 alternately disposed are used to generate an interference effect to eliminate reflected light, thereby improving light transmittance.

As shown in fig. 1, the thickness of the SiO2 layer 211 attached on the base layer 100 is 5 ± 1nm, the thickness of the SiO2 layer 211 near the AF film layer 220 is 70.6 ± 5nm, the thickness of the Nb2O5 layer 212 near the base layer 100 is 12.6 ± 2nm, the thickness of the Nb2O5 layer 212 near the AF film layer 220 is 115.4 ± 5nm, the thickness of the SiO2 layer 211 between two Nb2O5 layers 212 is 30.7 ± 3nm, and the thickness of the AF film layer 220 is 18-30 nm.

The process for producing an antireflection film shown in fig. 2 includes:

A. cleaning: firstly, cleaning once, putting the substrate into the vacuum chamber, pumping out air in the vacuum chamber to ensure that the vacuum degree in the vacuum chamber is less than or equal to 5.0 x 10-3Pa, and finally cleaning once again, wherein the method specifically comprises the following steps:

a1, manual cleaning: before the product is put into the cleaning machine, a dust collector is used for cleaning, and then the cleaning machine is used for cleaning by using dust-free cloth.

A2, vacuum cleaning: after the vacuum chamber is evacuated, the cleaning method is ion cleaning.

The air pumping of the vacuum chamber is divided into rough pumping and fine pumping, the rough pumping is firstly carried out to ensure that the pressure in the vacuum chamber is less than or equal to 8Pa, the time of the rough pumping is controlled between 8 and 15min, then the fine pumping is carried out to ensure that the pressure in the vacuum chamber is less than or equal to 5.0 x 10 to 3Pa, the two times of pumping is divided into two times of pumping, the rough pumping is used for quickly reducing the pressure in the vacuum chamber to improve the working efficiency, and the fine pumping is used for slowly pumping the air to ensure that the pressure in the vacuum chamber can accurately reach the standard of less than or equal to 5.0 x 10 to 3 Pa.

B. Plating an AR film: continuously pumping the air in the vacuum chamber to ensure that the vacuum degree in the vacuum chamber is less than or equal to 3.5 x 10 < -3 > Pa, then coating, discharging argon and oxygen during coating, specifically discharging the argon at the speed of 160 +/-50 sccm, discharging the oxygen at the speed of 250 +/-50 sccm, controlling the ratio of the argon to the oxygen in the vacuum chamber by controlling the discharging speed, simultaneously facilitating the vacuum degree in the vacuum chamber to be kept at less than or equal to 0.5 +/-0.3 Pa, firstly plating a SiO2 layer on the base layer, then plating a Nb2O5 layer, repeatedly plating a SiO2 layer and a Nb2O5 layer, and finally plating a SiO2 layer.

C. Coating an AF film: firstly, pumping out air in the vacuum chamber to ensure that the vacuum degree of the vacuum chamber is less than or equal to 3.0 x 10-3Pa, and then plating an AF film.

D. Storage and detection: the finished product is moved out of the vacuum chamber, then is kept stand, and finally is detected and stored.

Example 2

As shown in fig. 3, the present embodiment is different from embodiment 1 in that: both Nb2O5 layers 212 were biconvex lens shaped, and the SiO2 layer 211 between the two Nb2O5 layers 212 was biconcave lens shaped; the other two SiO2 layers 211 are both in the shape of a single concave lens, and the concave side of the single concave lens is close to the Nb2O5 layer 212, because in embodiment 1, although part of the reflected light can be eliminated due to the interference effect, there still exists part of the reflected light, and these reflection bars still affect the definition of the mobile phone screen, the structure of the concave lens and the convex lens is adopted, the reflected light in the original direction is divided into two directions, and the reflected light in the same direction is also eliminated due to the interference effect, and the reflected light in the original direction is scattered into two directions, forming a principle similar to diffuse reflection, thereby reducing the reflectivity.

Specifically, the thickness of the thickest part of the SiO2 layer 211 attached on the base layer 100 is 5 ± 1nm, the thickness of the thickest part of the SiO2 layer 211 close to the AF film layer 220 is 70.6 ± 1nm, the thickness of the thickest part of the Nb2O5 layer 212 close to the base layer 100 is 12.6 ± 1nm, the thickness of the thickest part of the Nb2O5 layer 212 close to the AF film layer 220 is 115.4 ± 1nm, the thickness of the thickest part of the SiO2 layer 211 between the two Nb2O5 layers 212 is 30.7 ± 1nm, the thickness of the AF film layer 220 is 18-30nm, the difference between the thickest part and the thinnest part of the two Nb2O5 layers 212 is 10 ± 2nm, the difference between the thickest part and the thinnest part of the SiO2 layer 211 between the two Nb2O5 layers 212 is 10 ± 2nm, and the difference between the thickest part and the thickest part of the other two SiO2 layers 211 is 5 ± 1 nm.

The precision of the thickness of each film layer of the five-layer AR film layer 210 is improved to match the precision of the concave-convex structure.

The manufacturing process of the antireflection film shown in fig. 4 to 5 is different from that of example 1 in that: when the protruding positions of the Nb2O5 layers are plated in the step B, the two shielding plates 310 are arranged at the two sides of the base layer 100 for shielding, so that Nb scattered by the target 300 is reduced and attached to the two sides of the base layer 100, the two shielding plates 310 can be slowly separated from each other, the stacking thickness of Nb2O5 at each position of the Nb2O5 layers on the base layer 100 is changed, and a structure with a thick middle and thin two sides is formed.

And when the sunken position of SiO2 layer is plated, set up a shielding plate 310 in basic unit 100 middle part position and shelter from, reduce the Si that target 300 dispersed and attach to basic unit 100 intermediate position, and this shielding plate 310 can slowly keep away from basic unit 100, change the pile-up thickness of SiO2 layer each position Nb2O5 on basic unit 100, form the thin both sides thick structure in middle part.

Finally, the above embodiments are only for illustrating the technical solutions of the present invention and not for limiting, although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions may be made to the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention, and all of them should be covered in the claims of the present invention.