阅读说明：本技术 点蒸发源及蒸镀设备 (Point evaporation source and evaporation equipment ) 是由 赵树利 于 2019-04-30 设计创作，主要内容包括：本发明公开了一种点蒸发源及蒸镀设备,点蒸发源包括用于容纳蒸发材料的坩埚本体和端盖,所述坩埚本体的顶端具有开口,所述端盖盖合在所述坩埚本体的开口处,所述端盖上设置有多个蒸发口部,所述多个蒸发口部排成一列,整列蒸发口部位于同一平面内。本发明通过在点蒸发源的坩埚本体端盖上增加蒸发口部的数量,可以充分利用蒸发口部整流的作用,使用多束蒸发束流共同沉积制备薄膜,能够减少现有点蒸发源因单一蒸发口造成的薄膜厚度不均匀性(双驼峰结构)现象,使得点蒸发源在镀膜基板表面沉积的膜层厚度更均匀,从而有效改善了镀膜厚度的均匀性。(The invention discloses a point evaporation source and evaporation equipment, wherein the point evaporation source comprises a crucible body for containing evaporation materials and an end cover, the top end of the crucible body is provided with an opening, the end cover covers the opening of the crucible body, the end cover is provided with a plurality of evaporation opening parts, the evaporation opening parts are arranged in a line, and the evaporation opening parts in the line are positioned in the same plane. According to the invention, the number of the evaporation opening parts is increased on the end cover of the crucible body of the point evaporation source, the rectification function of the evaporation opening parts can be fully utilized, a plurality of evaporation beams are jointly used for depositing and preparing the film, the phenomenon of non-uniformity (double hump structure) of the film thickness caused by a single evaporation opening of the existing point evaporation source can be reduced, the film thickness deposited on the surface of the film-coated substrate by the point evaporation source is more uniform, and the uniformity of the film-coated thickness is effectively improved.)

1. A point evaporation source is characterized by comprising a crucible body and an end cover, wherein the crucible body is used for containing evaporation materials, the top end of the crucible body is provided with an opening, the end cover covers the opening of the crucible body, a plurality of evaporation opening parts are arranged on the end cover, the evaporation opening parts are arranged in a line, and the evaporation opening parts in the line are positioned in the same plane.

2. The point evaporation source according to claim 1, wherein the plurality of evaporation port portions protrude from the upper surface of the end cap, and the evaporation port portions provided on both sides of the central axis of the crucible body are each arranged to be inclined in a direction away from the central axis.

3. The point evaporation source according to claim 2, wherein the evaporation ports provided on both sides of the central axis of the crucible body are inclined at an angle of 2 ° to 15 ° with respect to the central axis.

4. The point evaporation source according to claim 3, wherein the inclination angles of the evaporation opening portions provided on both sides of the central axis of the crucible body are gradually increased in a direction away from the central axis.

5. The point evaporation source according to any one of claims 1 to 4, wherein each evaporation port portion has an open end surface, and a distance l between centers of the open end surfaces of two adjacent evaporation port portions is 5cm to 10 cm.

6. An evaporation apparatus comprising the point evaporation source according to any one of claims 1 to 5.

7. The evaporation apparatus according to claim 6, further comprising an evaporation chamber, wherein a plurality of point evaporation sources are arranged on the evaporation chamber, and the point evaporation sources are symmetrically arranged on two chamber walls in the width direction of the evaporation chamber.

8. An evaporation apparatus according to claim 7, further comprising a transport mechanism for transporting the coated substrate, wherein the crucible body is disposed on the chamber wall at an inclination angle α with respect to the vertical direction, the inclination angle α is 28 ° to 43 °, and the central axis of the crucible body is located in a plane perpendicular to the transport direction of the transport mechanism.

9. The evaporation apparatus according to claim 8, wherein all evaporation port sections of each of said point evaporation sources are aligned in a row, and the entire row of evaporation port sections is located in a plane perpendicular to a transport direction of said transport mechanism.

10. The evaporation apparatus according to claim 8 or 9, wherein each of the point evaporation sources has an odd number of evaporation ports, and a distance L between the evaporation port provided on the central axis of the crucible body and the transport mechanism₁The distance between the evaporation opening part arranged on the central axis of the crucible body and the vertical plane of the transmission mechanism is L₂Said L is₁And said L₂The ratio of (A) to (B) is 1.07-1.88: 1, wherein the median vertical plane is parallel to the transport direction of the transport mechanism.

Technical Field

The invention relates to the technical field of evaporation sources, in particular to a point evaporation source and evaporation equipment comprising the same.

Background

The CIGS thin-film solar cell has high photoelectric conversion efficiency, good low-light performance, low temperature coefficient and other excellent performances, so that the CIGS thin-film solar cell is widely concerned and researched, and the industrialization is preliminarily realized, so that the CIGS thin-film solar cell is one of the most potential thin-film solar cells. The preparation process of the copper indium gallium selenide film layer is the most core technology for obtaining the high-performance copper indium gallium selenide thin-film solar cell module.

The co-evaporation method is one of the mainstream methods for preparing a high-quality copper indium gallium selenide absorption layer. The production line mainly comprises the following steps of preparing the copper indium gallium selenide by using a co-evaporation method: in the CIGS coating chamber, four evaporation sources of copper, indium, gallium and selenium are melted and kept to be continuously evaporated in a resistance heating mode. The substrate plated with the back electrode layer is transmitted to the CIGS coating chamber from the outside (or other process chambers) through automatic line transmission, and evaporated copper, indium, gallium and selenium particles are continuously collided and reacted, and are deposited and combined on the surface of the back electrode layer of the substrate to form the CIGS thin film material.

In the existing CIGS coating chamber, three evaporation sources of copper, indium and gallium are independently distributed in the coating chamber according to a bilateral symmetry rule, and evaporated copper, indium and gallium particles are sequentially deposited on the surface of a horizontally transmitted coating substrate according to the design sequence of a metal source. Generally, evaporation materials of three evaporation sources of copper, indium and gallium are usually contained in a crucible, in order to reduce the uniformity problem of the evaporation film layer caused by the evaporation sources and the limited space between the evaporation sources and the film coating substrate to a certain extent, and to prevent evaporation particles from falling into the evaporation sources, the three evaporation sources of copper, indium and gallium are obliquely arranged in the copper indium gallium selenide film coating chamber.

However, the existing copper, indium and gallium evaporation sources are all evaporated from a single evaporation port, and the evaporation sources cannot be regarded as strict point sources, namely evaporation beam flows are not uniformly distributed according to a hemispherical surface, and the thickness of a film layer deposited on the surface of a coated substrate by the evaporation source with the structure is a double-hump structure, namely, the thickness of two sides is larger than that of the middle part. Even if evaporation rates and atomic proportions of the four elements of the copper, indium, gallium and selenium are adjusted, the control of film thickness uniformity is limited. Therefore, the conventional evaporation source structure cannot achieve further improvement in the uniformity of the film thickness.

Disclosure of Invention

In order to solve the technical problems, the invention provides a point evaporation source and an evaporation device, which can reduce the phenomenon of non-uniformity of the thickness of a film caused by a single evaporation port of the existing point evaporation source and improve the uniformity of the thickness of the film.

The invention provides a point evaporation source, which comprises a crucible body and an end cover, wherein the crucible body is used for containing evaporation materials, the top end of the crucible body is provided with an opening, the end cover covers the opening of the crucible body, a plurality of evaporation opening parts are arranged on the end cover, the evaporation opening parts are arranged in a row, and the evaporation opening parts in the row are positioned in the same plane.

The invention also provides evaporation equipment comprising the point evaporation source.

According to the invention, the number of evaporation opening parts is increased on the end cover at the top end of the crucible body of the point evaporation source, and a plurality of evaporation opening parts which are arranged in a row on the same plane are used for evaporation deposition to the coated substrate, so that the rectification function of the evaporation opening parts can be fully utilized, and a plurality of evaporation beam flows are jointly used for deposition to prepare the film.

Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.

Drawings

The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the example serve to explain the principles of the invention and not to limit the invention.

Fig. 1 is a schematic distribution diagram of a point evaporation source in the evaporation apparatus of the present embodiment;

FIG. 2 is a schematic view of a coating film of the point evaporation source of the present embodiment;

fig. 3 is a perspective view of a point evaporation source according to the present embodiment.

In the figure:

1: an evaporation chamber; 2: a substrate; 3: a transport mechanism; 4: point evaporation source; 41: a crucible body; 42: an end cap; 421: a first evaporation port portion; 4211: an opening section of the first evaporation port; 422: a second evaporation port portion; 423: a third evaporation port part.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings of the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the invention without any inventive step, are within the scope of protection of the invention.

Embodiments of the present invention provide a point evaporation source that can be installed in an evaporation apparatus to form an evaporated film material. Optionally, the point evaporation source can be installed in an evaporation device for preparing the copper indium gallium selenide thin-film solar cell, and is used for depositing evaporated copper, indium, gallium and selenium particles on the surface of a coated substrate to form a copper indium gallium selenide thin-film material.

Here, it should be noted that the point evaporation source of the present embodiment is not a point evaporation source in a strict sense, but is a concept proposed mainly for distinguishing line evaporation sources, that is, the point evaporation source of the present embodiment is an improvement based on a point evaporation source having a single evaporation port, and the number of evaporation ports is increased, but the increased number of evaporation ports is not sufficient as a line evaporation source.

The point evaporation source of the present embodiment includes a heating unit, a crucible body having a U-shaped cross section, and an end cap. The top of crucible body has an opening, and end cover detachably closely closes at the opening part of crucible body for crucible body and end cover form the airtight space that holds evaporating material jointly. The heating assembly includes a heater disposed outside the crucible body for heating the crucible body to melt and maintain continuous evaporation of the solid evaporation material. The evaporation material is a solid raw material of copper, indium, gallium and selenium in the preparation of the copper indium gallium selenide thin-film solar cell.

In the present embodiment, a plurality of evaporation ports are provided at intervals in the end cap, the plurality of evaporation ports are arranged in a row, and the evaporation ports in the row are located in the same plane. In order to provide sufficient space for arranging a plurality of evaporation openings and improve the evaporation rate of the evaporation bundle at the outlet, the end cover of the embodiment can be a conical end cover with a wide top and a narrow bottom.

The number of evaporation ports on the point evaporation source of the present embodiment is mainly determined by the distribution relationship between the point evaporation source and the coated substrate in the evaporation chamber in actual production, the inclination angle and the evaporation area of each evaporation port, and it is necessary to ensure the range that the evaporation ports cannot be formed as a linear evaporation source, and in addition, it is also necessary to consider reducing the equipment processing difficulty and the production cost as much as possible, so that any of 2, 3, 4, and 5 evaporation ports of the point evaporation source of the present embodiment can be selected, and preferably 3.

The evaporation ports of the embodiment can be evaporated simultaneously in the same plane, and the rectification function of the evaporation ports is fully utilized to change the direction of the outlet beam of the evaporation ports, so that the film can be prepared by jointly depositing a plurality of evaporation beams. The point evaporation source with the design can reduce the phenomenon of non-uniformity (double hump structure) of the film thickness of the point evaporation source caused by a single evaporation port when being applied to the preparation of the CIGS thin-film solar cell, so that the film thickness deposited on the surface of a coated substrate by the point evaporation source is more uniform, and the uniformity of the coated thickness is improved.

In some embodiments, in order to increase the flow area of the evaporation beam, the evaporation port is designed to be a conical ejection port with a wide top and a narrow bottom. Each jet orifice is arranged by protruding the upper surface of the end cover and communicated with the closed space, and the jet orifices are arranged in a row and the whole row of jet orifices are positioned in the same plane (coplanar). In other words, the central axes of all the injection ports on the point evaporation source are coplanar, rather than a row of injection ports arranged in a staggered manner, so that a plurality of all the injection ports can simultaneously inject the evaporated particles in the same plane.

In some embodiments, the evaporation port portions provided on both sides of the central axis of the crucible body are arranged obliquely toward a direction away from the central axis. Furthermore, the inclination angle of evaporation opening parts arranged at two sides of the central axis of the crucible body relative to the central axis is 2-15 degrees. That is, the inclination angle of any one of the evaporation port portions provided on both sides of the central axis of the crucible body with respect to the central axis is any one of the ranges of 2 ° to 15 °, and may be any one of, for example, 2 °, 5 °, 8 °, 10 °, 13 °, 15 °, and the like. The inclination angles of the evaporation opening parts arranged on the two sides of the central axis of the crucible body can be the same or completely different, and can be partially the same. The inclination angles of the evaporation opening parts arranged on the two sides of the central axis are mainly determined according to the distribution relation of a point evaporation source and a coated substrate in an evaporation chamber in actual production, the number of the evaporation opening parts on the point evaporation source and the evaporation area of each evaporation opening part.

Further, when the plurality of evaporation port portions of the point evaporation source are symmetrically arranged with respect to the central axis of the crucible body, the angle at which the evaporation port portion on one side of the central axis of the crucible body is inclined outward is the same as the angle at which the evaporation port portion on the other side of the central axis of the crucible body is inclined outward at the corresponding symmetric position, wherein the inclination outward is inclined in a direction away from the central axis of the crucible body.

In some embodiments, in order to make the uniformity of the thickness of the film layer deposited on the surface of the coated substrate by the point evaporation source better, all the evaporation port parts on the point evaporation source can be arranged according to the following design: the inclination angles of the evaporation opening parts arranged at the two sides of the central axis of the crucible body are gradually increased along the direction far away from the central axis. That is, the evaporation port portion provided on each side of the central axis of the crucible body is inclined at a larger angle with respect to the central axis of the crucible body as the evaporation port portion is farther from the central axis of the crucible body. The evaporation opening parts on the two sides of the central axis of the crucible body are designed in such a way, the overlapping of the radiation areas on the coated substrate between the evaporation opening parts can be reduced, and then the phenomenon that the coating thickness of a point evaporation source is uneven (a multi-hump structure) is reduced, so that the uniformity of the coating thickness is improved.

The invention further provides evaporation equipment which comprises the point evaporation source in any one of the above embodiments.

In some embodiments, the evaporation apparatus further includes an evaporation chamber and a transport mechanism for transporting the coated substrate, the evaporation chamber is provided with a plurality of point evaporation sources, and the point evaporation sources are symmetrically arranged on two chamber walls in the width direction of the evaporation chamber.

Optionally, in the evaporation equipment for preparing the copper indium gallium selenide thin-film solar cell, the plurality of point evaporation sources are three point evaporation sources of copper, indium and gallium, and the three point evaporation sources of copper, indium and gallium are installed on the chamber walls on two sides of the evaporation chamber in the width and length directions according to a bilateral symmetry rule.

In some embodiments, the crucible body of each evaporation source is disposed on the chamber wall at an inclination angle α of 28 ° to 43 °, and the central axis of the crucible body lies in a plane perpendicular to the transport direction of the transport mechanism. All the evaporation ports of each point evaporation source are arranged in a line, and the entire line of evaporation ports is located in a plane perpendicular to the transmission direction of the transmission mechanism. It should be noted here that the crucible body of each point evaporation source is disposed on the chamber wall at a certain inclination angle α, and the central axis of the crucible body is located in a plane perpendicular to the transmission direction of the transmission mechanism, which actually means: each point evaporation source is obliquely arranged in a direction perpendicular to the transport direction of the transport mechanism at a certain inclination angle alpha. All evaporation mouth parts of each point evaporation source are arranged in a line, and the whole line of evaporation mouth parts are positioned in a plane perpendicular to the transmission direction of the transmission mechanism, and actually means that: all the evaporation ports of each point evaporation source are arranged in a row, and the whole row of evaporation ports is positioned in a plane perpendicular to the transmission direction of the transmission mechanism.

Optionally, in the evaporation equipment for preparing the copper indium gallium selenide thin-film solar cell, each point evaporation source of the copper, indium and gallium point evaporation sources is arranged perpendicular to the transmission direction of the transmission mechanism and is inclined relative to the vertical direction at a certain inclination angle α, and the inclination angle α is any value in the range of 28 ° to 43 °, for example, any value in the range of 28 °, 30 °, 32 °, 35 °, 38 ° and 43 °, which not only can improve the uniformity of the coating thickness, but also facilitates loading. All evaporation ports on each point evaporation source are arranged in a line, the entire line of evaporation ports are positioned in a plane perpendicular to the transmission direction of the transmission mechanism, the evaporation ports arranged on two sides of the central axis of the crucible body are obliquely arranged in the direction departing from the central axis, the inclination angle is any value in the range of 2-15 degrees, the radiation areas on the coated substrate between the jet ports can be reduced from overlapping, the phenomenon that the coating thickness of the point evaporation source is uneven (multi-hump structure) is further reduced, and the uniformity of the coating thickness is improved.

The transmission direction of the transmission mechanism is the transmission direction of the coated substrate. The vertical direction perpendicular to the transmission direction of the transmission mechanism and the transmission direction of the transmission mechanism are both perpendicular to the transmission direction of the coated substrate.

In the evaporation equipment for preparing the copper indium gallium selenide thin-film solar cell, the inclination angles alpha of three point evaporation sources of copper, indium and gallium are mainly determined according to the distribution relation of the point evaporation sources and a coated substrate in an evaporation chamber in actual production, the number of evaporation opening parts on the point evaporation sources, the inclination angle of each evaporation opening part and the evaporation area of the evaporation opening part. The inclination angles of evaporation opening parts on two sides of the central axis of the crucible body of the copper, indium and gallium point evaporation sources are mainly determined according to the distribution relation of the point evaporation sources and the coated substrate in the evaporation chamber in actual production, the number of the evaporation opening parts on the point evaporation sources and the evaporation area of each evaporation opening part.

Compared with the existing copper, indium and gallium three-point evaporation source with a single evaporation port, the evaporation port number of the copper, indium and gallium three-point evaporation source is increased, and the arrangement of the evaporation ports on the copper, indium and gallium three-point evaporation source in the vertical direction of the transmission direction of the coated substrate is improved, so that the coating uniformity of the copper, indium and gallium three-point evaporation source in the direction vertical to the transmission direction of the coated substrate is improved, the phenomenon of non-uniformity (double hump structure) of the film thickness caused by the single evaporation port is reduced, and the coating uniformity of the copper indium gallium selenium film is improved.

In some embodiments, each evaporation opening is a conical nozzle with a wide top and a narrow bottom, each evaporation opening has an opening end face, and a central axis of the nozzle arranged on a central axis of the crucible body coincides with a central axis of the crucible body (i.e. a central axis of the point evaporation source), so that the opening end face is perpendicular to the central axis of the crucible body; the jet orifices arranged on the two sides of the central axis of the crucible body are obliquely arranged in a direction deviating from the central axis, and the opening end faces of the jet orifices are not parallel to the opening end faces of the jet orifices arranged on the central axis of the crucible body.

In some embodiments, the distance l between the centers of the opening end faces of two adjacent evaporation port portions (ejection ports) is any value of 5cm to 10cm, and for example, may be any value of 5cm, 6.5cm, 7cm, 8cm, 8.5cm, 9.5cm, 10cm, or the like. The distance l between the centers of the opening end surfaces of two adjacent ejection openings is related to the magnitude of the respective inclination angles of the two ejection openings, and may be the same or different. The design of the distance l between the centers of the opening end surfaces of two adjacent jet ports can reduce the overlapping of the radiation areas on the coated substrate between the jet ports, further reduce the phenomenon of uneven coating thickness (multi-hump structure) of a point evaporation source and improve the uniformity of the coating thickness.

In some embodiments, each point evaporation source has an even number of evaporation orifices, for example, when each point evaporation source has two evaporation orifices, the two evaporation orifices are symmetrically arranged with respect to the central axis of the crucible body. Based on the structure, the distance L between the transmission mechanism and the intersection point of the crucible body and the central axis of the crucible body₁The particle diameter is any value in the range of 815mm to 1617mm, and for example, any value may be 815mm, 888mm, 930mm, 1024mm, 1143mm, 1171mm, 1248mm, 1344mm, 1420mm, 1472mm, 1617mm, or the like. Distance L between intersection point of central axes of the crucible body and vertical plane of the transmission mechanism₂The thickness may be any value in the range of 760mm to 860mm, for example, 760mm, 780mm, 800mm, 820mm, 840mm, 860mm, or the like.

Further, each point evaporation source has even number of evaporation opening parts, and the distance L between the transmission mechanism and the intersection point of the central axes of the crucible body and the crucible body₁The distance L between the intersection point crossed with the central axes of the crucible body and the vertical plane of the transmission mechanism₂The size relationship of (A) is as follows: l is₁：L₂1.07-1.88: 1, preferably, L₁：L₂1.28-1.60: 1, the distance between the intersection point of the central axes of the crucible body and the coating substrate is designed to ensure that the gold evaporated from the evaporation opening part The metal beam can form a uniform film on the coated substrate in the direction perpendicular to the transmission direction.

The distance between the transmission mechanism and the intersection point of the crucible body and the central axis of the crucible body is the vertical distance between the intersection point of the crucible body and the central axis of the crucible body and the coated substrate which is horizontally transmitted in the vertical height direction. The distance between the intersection point of the central axes of the crucible body and the vertical plane of the conveying mechanism is the horizontal distance between the intersection point of the central axes of the crucible body and the vertical plane of the coated substrate conveyed horizontally in the horizontal direction. Wherein, the perpendicular plane in the middle of the transmission mechanism is parallel to the transmission direction of the transmission mechanism.

In some embodiments, each evaporation source has an odd number of evaporation ports, for example, when each evaporation source has three evaporation ports, one of the evaporation ports is disposed in parallel on the central axis of the crucible body, and the other two evaporation ports are symmetrically disposed on both sides of the central axis of the crucible body. Based on the structure, the central axis of the evaporation opening part arranged on the central axis of the crucible body is superposed with the central axis of the crucible body (namely the central axis of the point evaporation source), the opening end face of the evaporation opening part is vertical to the central axis of the crucible body, and the distance L between the center of the opening end face of the evaporation opening part arranged on the central axis of the crucible body and the transmission mechanism ₁The particle diameter is in the range of 751mm to 1505mm, and may be any of 751mm, 858mm, 894mm, 909mm, 998mm, 1053mm, 1114mm, 1184mm, 1299mm, 1317mm, 1505mm, and the like, for example. A distance L between the center of the opening end surface of the evaporation opening part arranged on the central axis of the crucible body and the vertical plane of the transmission mechanism₂The thickness may be any value in the range of 700mm to 800mm, for example, 700mm, 710mm, 725mm, 740mm, 750mm, 768mm, 780mm, 792mm, 800mm, or the like.

Furthermore, each evaporation source is provided with an odd number of evaporation opening parts, and the distance L between the center of the opening end surface of the evaporation opening part arranged on the central axis of the crucible body and the transmission mechanism₁And the opening end surface of the evaporation opening part arranged on the central axis of the crucible bodyDistance L between center and vertical plane of transmission mechanism₂The size relationship of (A) is as follows: l is₁：L₂1.07-1.88: 1, preferably, L₁：L₂1.28-1.60: 1, the space between the evaporation port part on the central axis of the crucible body and the coated substrate is designed, so that metal beams evaporated from the evaporation port part can form a uniform film on the coated substrate in the direction vertical to the transmission direction.

The distance between the center of the opening end surface of the evaporation opening on the central axis of the crucible body and the conveying mechanism is the vertical distance between the center of the opening end surface of the evaporation opening on the central axis of the crucible body and the coated substrate conveyed horizontally in the vertical height direction. The distance between the center of the opening end face of the evaporation opening on the central axis of the crucible body and the vertical plane of the transmission mechanism is the horizontal distance between the center of the opening end face of the evaporation opening on the central axis of the crucible body and the vertical plane of the coated substrate which is horizontally transmitted. Wherein, the perpendicular plane in the middle of the transmission mechanism is parallel to the transmission direction of the transmission mechanism.

In conclusion, by adjusting the inclination angle of the copper, indium and gallium point evaporation sources, the bidirectional distance between the point evaporation sources and the coated substrate, the distance between each evaporation opening and the size of the inclination angle, the unevenness of a film layer caused by the superposition and deposition of a plurality of evaporation beams is greatly weakened, the coating uniformity of the copper, indium and gallium point evaporation sources in the direction vertical to the substrate transmission direction is improved, and the coating uniformity of the copper indium gallium selenide film is improved.

Fig. 1 and fig. 2 are schematic diagrams of distribution of point evaporation sources and coating films of the point evaporation sources in an evaporation apparatus according to an embodiment of the present invention. As shown in fig. 1 and fig. 2, an embodiment of the present invention provides a cigs thin film co-evaporation apparatus, which includes an evaporation chamber 1 for evaporating a cigs thin film and a transmission mechanism 3 for transmitting a substrate 2, wherein seven copper, indium, and gallium point evaporation sources 4 are disposed on the evaporation chamber 1, the seven copper, indium, and gallium point evaporation sources 4 are symmetrically disposed on chamber walls on two sides of the evaporation chamber 1 in a width-length direction, and each point evaporation source 4 is located in a plane perpendicular to a transmission direction of the transmission mechanism 3 and disposed on the chamber wall at a certain inclination angle α with respect to a vertical direction b-b'. As shown in fig. 2, the transport direction of the transport mechanism 3 or the transport direction of the substrate 2 corresponds to a direction perpendicular to the paper surface. The plane perpendicular to the transport direction of the transport device 3 corresponds to the plane of the paper. The inclination angle α of each point evaporation source 4 is equivalent to the inclination angle α formed between the central axis a1-a1 'and the vertical direction b-b' of the crucible body 41 of the point evaporation source 4, and the inclination angle α is 40 °.

In the present embodiment, each point evaporation source 4 of the seven copper, indium, and gallium point evaporation sources includes a heater (not shown in fig. 2 because the heater is a conventional component) disposed outside the crucible body 41, a cylindrical crucible body 41, and an end cap 42 covering the opening of the crucible body 41, the end cap 42 is a conical end cap with a wide top and a narrow bottom, and the copper, indium, and gallium solid raw materials can be placed in a closed space 43 formed by the crucible body 41 and the end cap 42. Under the heating action of the heater, the solid evaporation materials of copper, indium and gallium are melted and kept continuously evaporated and deposited on the surface of the coated substrate 2.

In this embodiment, three spaced evaporation port portions are protruded from the upper surface of the end cap 42, the three evaporation port portions are respectively a first evaporation port portion 421, a second evaporation port portion 422, and a third evaporation port portion 423, the three evaporation port portions are arranged in a row, and the entire row of evaporation port portions is located on a plane perpendicular to the conveying direction of the conveying mechanism 3, that is, a plane on which the paper surface is located. As shown in fig. 2 and 3, the three evaporation port portions are each a conical ejection port which is wide at the top and narrow at the bottom, and each evaporation port portion has a circular opening end surface. The first evaporation port part 421 is provided on the central axis a1-a1 'of the crucible body 41, and the opening cross section 4211 of the first evaporation port part 421 is perpendicular to the central axis a1-a 1' of the crucible body 41. The second evaporation port portion 422 is provided at the upper left of the first evaporation port portion 421, the second evaporation port portion 422 is inclined with respect to the first evaporation port portion 421, and the central axis a2-a2 'of the second evaporation port portion 422 is inclined at an angle β of 8 ° in the (upper left) direction away from the central axis a1-a 1' of the crucible body 41. The third evaporation port portion 423 is provided at the lower right of the first evaporation port portion 421, the third evaporation port portion 423 is inclined with respect to the first evaporation port portion 421, and the center axis a3-a3 'of the third evaporation port portion 423 is inclined at an angle γ of 8 ° in a (lower right) direction away from the center axis a1-a 1' of the crucible main body 41.

As shown in FIG. 3, since the second evaporation port portion 422 and the third evaporation port portion 423 are provided symmetrically with respect to the central axis a1-a1 'of the crucible body 41, the distance l between the center B of the opening end face of the second evaporation port portion 422 and the center A of the opening end face of the first evaporation port portion 421 and the distance l' between the center C of the opening end face of the third evaporation port portion 423 and the center A of the opening end face of the first evaporation port portion 421 are equal to each other and are 9 cm.

The (vertical) distance L between the center A of the opening end face of the first evaporation port 421 and the lower surface of the coated backboard 2 on the transmission mechanism 3₁906mm, the (horizontal) distance L between the center A of the opening end surface of the first evaporation port part 421 and the vertical plane c-c' of the coated back plate 2 on the transmission mechanism 3₂Is 760 mm.

In the embodiment, by improving the design of evaporation ports of three evaporation sources of copper, indium and gallium, the number of the evaporation ports of the evaporation sources of copper, indium and gallium is increased to 3, the nonuniformity of a film layer caused by the superposition and deposition of 3 beams of evaporation beams is weakened by adjusting the distance of the 3 evaporation ports, the inclination angle beta of the second evaporation port 422 and the inclination angle gamma of the third evaporation port 423, the phenomenon of nonuniformity (double hump structure) of the film thickness caused by a single evaporation port is reduced, the film coating uniformity of the evaporation sources of copper, indium and gallium in the direction perpendicular to the substrate transmission direction is improved, and the film coating uniformity of the copper indium gallium selenide film is improved.

Based on the structural design of the three point evaporation sources of copper, indium and gallium in this embodiment, the heating power of the point evaporation source is further adjusted and optimized, the heating power of the copper point evaporation source is controlled to be 1700-2400W, the heating power of the indium point evaporation source is 500-800W, and the heating power of the gallium point evaporation source is 100-300W, so that a more uniform copper indium gallium selenide film can be prepared under the condition that the substrate transmission rate is 30-60cm/min, the non-uniformity of the film thickness (1.5-3 μm) is reduced to within 5%, the common level of the vacuum coating equipment is reached, and the non-uniformity is better than that (10-15%) of the single evaporation port design.

Although the embodiments of the present invention have been described above, the above description is only for the convenience of understanding the present invention, and is not intended to limit the present invention. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.