阅读说明：本技术 一种高利用率宽面矩形阴极靶及其提高利用率的方法 (Wide-surface rectangular cathode target with high utilization rate and method for improving utilization rate thereof ) 是由 张斌 高凯雄 贾倩 张俊彦 强力 于 2020-08-04 设计创作，主要内容包括：本发明提供了一种宽面高利用率矩形阴极靶,包括软铁底板及设置在软铁底板上的中心磁钢,包围中心磁钢的同向多道环形磁钢。环形磁钢的磁场面与软铁底板呈10-15°的倾角；最外环形跑道磁钢与中心磁钢等高,且由外向内环形跑道磁钢按照每道3㎜的阶梯降低；环形跑道磁钢的宽度由外向内逐渐变小。本发明设计的宽面矩形阴极靶的磁场布置可使平面溅射靶材的利用率到50%以上。将上述宽面矩形阴极靶在初次溅射使用后,将未溅射区域和已溅射区域靶材切割分离,未溅射区域按上述宽面矩形阴极靶的结构拼接后可以再次用作磁控溅射靶材,使靶材的利用率提高到80%以上,不仅提高了镀膜效率,而且极大的节约了资源。(The invention provides a wide-surface high-utilization-rate rectangular cathode target which comprises a soft iron bottom plate, central magnetic steel arranged on the soft iron bottom plate, and a plurality of annular magnetic steels in the same direction surrounding the central magnetic steel. The magnetic field surface of the annular magnetic steel and the soft iron bottom plate form an inclination angle of 10-15 degrees; the outermost annular runway magnetic steel is equal to the central magnetic steel in height, and the annular runway magnetic steel is lowered according to each step of 3mm from outside to inside; the width of the annular runway magnetic steel is gradually reduced from outside to inside. The magnetic field arrangement of the wide-surface rectangular cathode target designed by the invention can enable the utilization rate of the planar sputtering target to reach more than 50%. After the wide-surface rectangular cathode target is used for the first time in a sputtering mode, the targets in the non-sputtering area and the sputtering area are cut and separated, the non-sputtering area can be used as the magnetron sputtering target again after being spliced according to the structure of the wide-surface rectangular cathode target, the utilization rate of the target is improved to be more than 80%, the film coating efficiency is improved, and resources are greatly saved.)

1. A wide-faced rectangular cathode target, characterized in that: the magnetic steel track comprises a soft iron bottom plate, central magnetic steel arranged on the soft iron bottom plate, and annular track magnetic steel surrounding the central magnetic steel, wherein the central magnetic steel and the annular track magnetic steel are in different directions.

2. The wide rectangular cathode target according to claim 1, wherein: the magnetic field surface of the annular runway magnetic steel and the soft iron bottom plate form an inclination angle of 10-15 degrees.

3. The wide rectangular cathode target according to claim 1, wherein: the annular runway magnetic steel has multiple paths, and the annular runway magnetic steel is in the same direction.

4. A broad rectangular cathode target according to claim 3, wherein: the outermost annular runway magnetic steel and the central magnetic steel are equal in height, the annular runway magnetic steel from outside to inside is lowered according to each 3mm step, and the inclination angle between the magnetic field surface of the annular runway magnetic steel and the soft iron bottom plate is kept unchanged.

5. The wide rectangular cathode target according to claim 1, wherein: the width of the annular runway magnetic steel is gradually reduced from outside to inside.

6. The wide rectangular cathode target according to claim 1, wherein: the central magnetic steel and the outermost annular magnetic steel are both neodymium iron boron or samarium cobalt strong magnetic steel; the inner ring magnetic steel is neodymium iron boron, samarium cobalt strong magnetic steel or ferrite weak magnetic steel.

7. The method for improving the utilization rate of the wide rectangular cathode target as claimed in claim 1, wherein after the wide rectangular cathode target is used for the first time in a sputtering mode, the target material in the non-sputtering area and the target material in the sputtering area are cut and separated, and the non-sputtering area can be used as the magnetron sputtering target material again after being spliced according to the structure of the wide rectangular cathode target.

Technical Field

The invention relates to a rectangular cathode for magnetron sputtering and arc ion coating, in particular to a wide-surface rectangular cathode with high utilization rate.

Background

Along with the aggravation of energy and resource consumption, people gradually increase the consciousness of saving energy and resources, and novel anticorrosion and antifriction wear-resisting technologies continuously appear for reducing the consumption and waste of energy and resources. Surface treatment techniques such as electroplating, micro-arc oxidation, plasma spraying and the like are widely applied to the anticorrosion protection of materials and the reduction of friction coefficient.

Physical vapor deposition techniques, such as arc ion plating and magnetron sputtering, are increasingly widely regarded as pollution-free green surface treatment techniques and applied in large areas, compared with electroplating and micro-arc oxidation. However, the utilization rate of the traditional planar cathode target is only 30-40%, and the rest materials are treated as waste products, so that the resource loss is caused. How to further improve the utilization of planar cathodes is becoming a current technical challenge.

Disclosure of Invention

The invention aims to provide a wide-surface rectangular cathode target to improve the utilization rate of a planar cathode target.

Another object of the present invention is to provide a method for improving the utilization rate of the above-mentioned wide-faced rectangular cathode target.

A wide-face rectangular cathode target comprises a soft iron bottom plate, central magnetic steel arranged on the soft iron bottom plate, and annular runway magnetic steel surrounding the central magnetic steel, wherein the central magnetic steel and the annular runway magnetic steel are in different directions. That is, when the central magnetic steel is the N pole, the annular runway magnetic steel is the S pole, and when the central magnetic steel is the S pole, the outer annular runway magnetic steel is the N pole.

The magnetic field surface of the magnetic steel of the annular runway and the soft iron bottom plate form an inclination angle of 10-15 degrees. The inclination degree of the inclination angle is related to the actual width of the target surface, and the larger the width is, the smaller the inclination angle is, and the more favorable the efficient utilization of the cathode target material is.

The annular runway magnetic steel has a plurality of channels, namely a first annular runway magnetic steel, a second annular runway magnetic steel, a third annular runway magnetic steel and the like from inside to outside in sequence. The annular runway magnetic steels are all in the same direction (i.e. when the central magnetic steel is the N pole, all the annular runway magnetic steels are the S pole, and when the central magnetic steel is the S pole, all the outer ring runway magnetic steels are the N pole). The outermost annular runway magnetic steel and the central magnetic steel are equal in height, the annular runway magnetic steel from outside to inside is lowered according to each 3mm step, and the inclination angle between the magnetic field surface of the annular runway magnetic steel and the soft iron bottom plate is kept unchanged. The width of the annular runway magnetic steel is gradually reduced from outside to inside.

The central magnetic steel and the outermost annular magnetic steel are both neodymium iron boron or samarium cobalt strong magnetic steel. According to the requirement, the inner ring magnetic field can be neodymium iron boron or samarium cobalt strong magnetic steel or ferrite weak magnetic steel. The soft iron bottom plate and the magnetic steel are packaged in the aluminum alloy box body to ensure that the cathode target material is not in direct contact with water in the sputtering process.

The magnetic field arrangement of the wide-surface rectangular cathode target designed by the invention can enable the utilization rate of the planar sputtering target to reach more than 50%.

In order to further improve the utilization rate of the rectangular cathode target, after the rectangular cathode target with the wide surface is used for the first time in a sputtering mode, the targets in the non-sputtering area and the sputtering area are cut and separated, the non-sputtering area can be used as the magnetron sputtering target again after being spliced according to the structure of the rectangular cathode target with the wide surface, and the utilization rate of the target is improved to be more than 80%.

In conclusion, the invention not only improves the film coating efficiency, but also greatly saves resources by the arrangement mode of the magnetic steel and the arrangement method of the cathode target.

Drawings

FIG. 1 is a schematic structural view of a planar rectangular cathode target according to example 1 of the present invention.

FIG. 2 is a layout diagram of the annular magnetic steel of the rectangular cathode target of the embodiment 1 of the invention.

FIG. 3 is a schematic structural view of a rectangular planar cathode target according to example 2 of the present invention.

Fig. 4 is a schematic diagram of target design and secondary splicing utilization in embodiment 3 of the present invention.

Detailed Description

The following further describes embodiments of the present invention with reference to the drawings.