阅读说明：本技术 一种制备大面积单层二碲化钒材料的两步气相方法 (Two-step gas phase method for preparing large-area single-layer vanadium ditelluride material ) 是由 杨万丽 陈鑫 孙艳 刘从峰 戴宁 于 2019-11-11 设计创作，主要内容包括：本发明公开了一种制备大面积单层二碲化钒材料的两步气相方法,该制备过程分为两步：先用化学气相沉积、热蒸发或溅射法三种化学或物理气相方法制备,在尺寸为1～100cm<Sup>2</Sup>的硅、二氧化硅、二氧化钛、三氧化二铝或碳化硅衬底上沉积厚度为2～50nm钒氧化物薄膜,沉积温度为100～500℃,沉积时间为10分钟～24小时；再在惰性气体或氢气气氛下,将沉积有钒氧化物薄膜的衬底与单质碲进行化学反应,反应温度为550～800℃,反应气压为100～800帕,反应时间为1分钟～30分钟,自然冷却后得到大面积单层二碲化钒材料。本发明的优点是：反应简单,可控性好,能在100cm<Sup>2</Sup>的衬底上制备出均一、稳定的单层二碲化钒材料。该发明制备的单层二碲化钒材料,在二维金属和半导体材料的制备及应用等方面有重要意义。(The invention discloses a two-step gas phase method for preparing a large-area single-layer vanadium ditelluride material, which comprises the following two steps: firstly, the material is prepared by three chemical or physical vapor methods of chemical vapor deposition, thermal evaporation or sputtering, and the size of the material is 1-100 cm 2 Depositing a vanadium oxide film with the thickness of 2-50 nm on the silicon, silicon dioxide, titanium dioxide, aluminum oxide or silicon carbide substrate, wherein the deposition temperature is 100-500 ℃, and the deposition time is 10 minutes-24 hours; then, the product is processedAnd carrying out chemical reaction on the substrate deposited with the vanadium oxide film and simple substance tellurium under the atmosphere of inert gas or hydrogen, wherein the reaction temperature is 550-800 ℃, the reaction pressure is 100-800 Pa, the reaction time is 1-30 minutes, and naturally cooling to obtain the large-area single-layer vanadium ditelluride material. The invention has the advantages that: simple reaction, good controllability, and capability of being 100cm 2 The uniform and stable monolayer vanadium ditelluride material is prepared on the substrate. The single-layer vanadium ditelluride material prepared by the method has important significance in the aspects of preparation, application and the like of two-dimensional metal and semiconductor materials.)

1. A two-step gas phase method for preparing a large-area single-layer vanadium ditelluride material is characterized by comprising the following steps of:

1) firstly, depositing a vanadium oxide film on a substrate;

2) and then, carrying out chemical reaction on the substrate deposited with the vanadium oxide film and the simple substance tellurium in an inert gas or hydrogen atmosphere, and naturally cooling to obtain the large-area single-layer vanadium ditelluride material.

2. The two-step vapor phase method for preparing large-area single-layer vanadium ditelluride material as claimed in claim 1, wherein the vanadium oxide film in step 1) is prepared at 100 ℃ to 500 ℃ for 10 minutes to 24 hours, and the substrate has a size of 1-100 cm²The silicon, silicon dioxide, titanium dioxide, aluminum oxide or silicon carbide is prepared by three chemical or physical vapor methods of chemical vapor deposition, thermal evaporation or sputtering, and the deposition thickness is 2-50 nm.

3. The two-step gas phase method for preparing a large-area single-layer vanadium ditelluride material as claimed in claim 1, wherein the chemical reaction temperature in step 2) is 550-800 ℃, the reaction pressure is 100-800 Pa, and the reaction time is 1-30 minutes.

Technical Field

The invention belongs to the field of material preparation, relates to a vapor deposition technology, and particularly relates to a two-step vapor phase method for preparing a large-area single-layer vanadium ditelluride material.

Background

In recent years, two-dimensional (2D) materials have received much attention for their potential application as high-performance functional nanomaterials. Ultra-thin two-dimensional transition metal bis-halocarbons (TMDs) have been widely studied for their excellent electrical, optical, and electrochemical properties. The ultrathin vanadium disulfide is a metal material in two-dimensional materials except graphene, and no band gap exists in an electronic structure of the ultrathin vanadium disulfide. The research on vanadium disulfide reveals that the vanadium disulfide is widely applied to the aspects of supercapacitors, battery materials, electrocatalysts, moisture sensors and the like. In view of the excellent properties of vanadium disulfide, it is essential to conduct research on vanadium ditelluride.

However, it is difficult to prepare vanadium ditelluride with a thickness of only a few atomic layers by common chemical and physical methods. The current methods for preparing single-layer vanadium ditelluride mainly comprise a mechanical stripping method, a liquid-phase stripping method and a chemical vapor deposition method which takes inert non-metallic materials (such as silicon dioxide/silicon, aluminum oxide and the like) as a growth substrate. The former two methods have small yield, low efficiency and poor repeatability, and can not obtain monolayer vanadium ditelluride in large area. Compared with the former two methods, the traditional chemical vapor deposition method has poor controllability of the layer number of the obtained material due to a van der waals epitaxial growth mechanism, is difficult to obtain a single-layer material with large area and uniformity, has small grain size of the material, and has a large amount of structural defects such as tellurium atom vacancies and tellurium atom vacancies. Therefore, obtaining a large-area single-layer structure is always the basis for further application of vanadium ditelluride materials, and is more difficult in technology.

Disclosure of Invention

The invention aims to provide a two-step gas phase method for preparing large-area single-layer vanadium ditelluride. The method has simple reaction and good controllability, and can be used in100cm²The uniform monolayer vanadium ditelluride is prepared on the substrate.

The invention relates to a two-step gas phase method for preparing a large-area single-layer vanadium ditelluride material, which comprises the following steps:

firstly, three chemical or physical vapor methods of chemical vapor deposition, thermal evaporation or sputtering are used to form a film with a size of 1-100 cm²Depositing a vanadium oxide film with the thickness of 2-50 nm on the silicon, silicon dioxide, titanium dioxide, aluminum oxide or silicon carbide substrate, wherein the deposition temperature is 100-500 ℃, and the deposition time is 10 minutes-24 hours; and then, carrying out chemical reaction on the substrate deposited with the vanadium oxide film and simple substance tellurium under the atmosphere of inert gas or hydrogen, wherein the reaction temperature is 550-800 ℃, the reaction pressure is 100-800 Pa, the reaction time is 1-30 minutes, and naturally cooling to obtain the large-area single-layer vanadium ditelluride material.

The invention has the advantages that: simple reaction, good controllability, and capability of being 100cm²The uniform and stable monolayer vanadium ditelluride material is prepared on the substrate.

Detailed Description