Film forming apparatus and film forming method
阅读说明:本技术 成膜装置和成膜方法 (Film forming apparatus and film forming method ) 是由 户岛宏至 岩下浩之 平泽达郎 于 2019-07-22 设计创作,主要内容包括:本发明的课题在于提供一种扩大了加工余量而且难以在放电空间发生与反应气体的反应的使用了反应性溅射的成膜装置和成膜方法。其解决手段一种成膜装置,其包括:处理腔室、释放溅射颗粒的溅射机构、屏蔽释放溅射颗粒的放电空间的溅射颗粒屏蔽部件、设置在处理腔室内的反应室、在反应室内支承基片的基片支承部、使基片移动的移动机构、设置于溅射颗粒屏蔽部件的具有小于基片的面积且使溅射颗粒朝向基片而通过的溅射颗粒通过孔、和向反应室内导入反应气体的反应气体导入部,该成膜装置一边使基片移动,一边使通过了溅射颗粒通过孔的溅射颗粒与导入到反应室的反应气体进行反应,在基片上形成反应性溅射膜。(The invention provides a film forming apparatus and a film forming method using reactive sputtering, which have a large machining allowance and are difficult to react with a reaction gas in a discharge space. The solution is a film forming apparatus comprising: the film forming apparatus includes a processing chamber, a sputtering mechanism for discharging sputtering particles, a sputtering particle shielding member for shielding a discharge space for discharging the sputtering particles, a reaction chamber provided in the processing chamber, a substrate supporting portion for supporting a substrate in the reaction chamber, a moving mechanism for moving the substrate, a sputtering particle passage hole provided in the sputtering particle shielding member and having an area smaller than that of the substrate and through which the sputtering particles pass toward the substrate, and a reaction gas introducing portion for introducing a reaction gas into the reaction chamber.)
1. A film deposition apparatus for depositing a film by reactive sputtering, comprising:
a processing chamber in which a film forming process is performed on a substrate;
a sputtering mechanism that releases sputtered particles from the target within the processing chamber;
a sputtering particle shielding member that shields a discharge space to which the sputtering particles released by the sputtering mechanism can be released;
a reaction chamber provided independently of the discharge space in the process chamber;
a substrate support supporting a substrate within the reaction chamber;
a moving mechanism that moves the substrate supported by the substrate support;
a sputtering particle passage hole, which is provided in the sputtering particle shielding member, has an area smaller than that of the substrate, and passes the sputtering particle toward the substrate of the reaction chamber; and
a reaction gas introduction part which introduces a reaction gas into the reaction chamber,
the film forming apparatus is configured to react sputtering particles released from the sputtering mechanism into the discharge space and ejected into the reaction chamber through the sputtering particle passage holes, with a reaction gas introduced into the reaction chamber, while moving the substrate by the substrate moving mechanism, and form a reactive sputtering film generated by the reaction on the substrate.
2. The film forming apparatus according to claim 1, wherein:
the area of the sputtering particle passing hole is 90% or less of the area of the substrate.
3. The film forming apparatus according to claim 2, wherein:
the area of the sputtering particle through hole is 10-50% of the area of the substrate.
4. The film forming apparatus according to any one of claims 1 to 3, wherein:
the substrate is horizontally arranged on the substrate supporting part,
the substrate moving mechanism moves the substrate in a horizontal plane,
the sputtering particle shielding member is arranged right above the substrate and has a sputtering particle shielding plate in which the sputtering particle passage holes are formed,
the sputtering particles react with the reaction gas in a reaction space between the sputtering particle shielding plate and the substrate.
5. The film forming apparatus according to claim 4, wherein:
the distance between the sputtering particle shielding plate and the substrate is more than 2 mm.
6. The film forming apparatus according to claim 4 or 5, wherein:
the sputtering particle shielding plate functions as a rectifying plate for rectifying the reaction gas.
7. The film forming apparatus according to any one of claims 1 to 6, wherein:
the sputtering mechanism includes:
a target holding portion that holds a target for releasing the sputtering particles;
a sputtering gas introduction unit that introduces a sputtering gas into the discharge space; and
a power supply for applying a voltage to the target holding portion,
the sputtering gas is dissociated around the target by applying a voltage to the target holding portion, and ions of the dissociated sputtering gas collide with the target to release sputtered particles.
8. The film forming apparatus according to claim 7, wherein:
the target holder holds the target in an inclined manner with respect to the substrate, and the sputtered particles released from the target are irradiated in an inclined manner with respect to the substrate.
9. The film forming apparatus according to any one of claims 1 to 8, wherein:
the substrate moving mechanism moves the substrate in a straight line.
10. The film forming apparatus according to any one of claims 1 to 8, wherein:
the substrate moving mechanism rotates the substrate.
11. A film forming method for forming a film by reactive sputtering using a film forming apparatus, comprising:
the film forming apparatus includes:
a processing chamber in which a film forming process is performed on a substrate;
a sputtering mechanism that releases sputtered particles from the target within the processing chamber;
a sputtering particle shielding member that shields a discharge space to which the sputtering particles released by the sputtering mechanism can be released;
a reaction chamber provided independently of the discharge space in the process chamber;
a substrate support supporting a substrate within the reaction chamber;
a moving mechanism that moves the substrate supported by the substrate support;
a sputtering particle passage hole, which is provided in the sputtering particle shielding member, has an area smaller than that of the substrate, and passes the sputtering particle toward the substrate of the reaction chamber; and
a reaction gas introduction part which introduces a reaction gas into the reaction chamber,
the film forming method includes:
a step of moving the substrate by the substrate moving mechanism;
a step of discharging the sputtering particles in the discharge space by the sputtering mechanism while moving the substrate, and ejecting the sputtering particles to the reaction chamber through the sputtering particle passage holes;
reacting the sputtering particles ejected into the reaction chamber with a reaction gas introduced into the reaction chamber; and
a step of forming a reactive sputtered film generated by the step of reacting on the substrate.
Technical Field
The present invention relates to a film deposition apparatus and a film deposition method.
Background
In the manufacture of electronic devices such as semiconductor devices, a film formation process is performed to form a film on a substrate.
As a film formation process, reactive sputtering is known in which sputtered particles released from a target are reacted with a reactive gas such as oxygen or nitrogen to form a compound thin film such as an oxide film or a nitride film on a substrate (for example, patent documents 1 and 2).
Disclosure of Invention
Technical problem to be solved by the invention
The invention provides a film forming apparatus and a film forming method using reactive sputtering, which have a large machining allowance and are difficult to react with a reaction gas in a discharge space.
Technical solution for solving technical problem
A film deposition apparatus according to an embodiment of the present invention is a film deposition apparatus for forming a film by reactive sputtering, including:
a processing chamber in which a film forming process is performed on a substrate;
a sputtering mechanism configured to release sputtered particles from the target in the processing chamber;
a sputtering particle shielding member that shields a discharge space to which the sputtering particles released by the sputtering mechanism can be released;
a reaction chamber provided independently of the discharge space in the processing chamber;
a substrate support part for supporting the substrate in the reaction chamber;
a moving mechanism for moving the substrate supported by the substrate support;
a sputtering particle passage hole provided in the sputtering particle shielding member, having an area smaller than that of the substrate, and allowing the sputtering particle to pass through the substrate in the reaction chamber; and
a reaction gas introduction part for introducing a reaction gas into the reaction chamber,
the film forming apparatus is configured to cause the reaction gas introduced into the reaction chamber to react with the sputtering particles discharged into the discharge space by the sputtering mechanism and ejected into the reaction chamber through the sputtering particle passage holes while moving the substrate by the substrate moving mechanism, thereby forming a reactive sputtered film formed by the reaction on the substrate.
Effects of the invention
According to the present invention, it is possible to provide a film deposition apparatus and a film deposition method using reactive sputtering in which a machining allowance is increased and a reaction with a reactive gas is difficult to occur in a discharge space.
Drawings
Fig. 1 is a vertical sectional view showing a film deposition apparatus according to a first embodiment.
FIG. 2 is a view showing a relationship between sputtering particles passing holes and a substrate in the film forming apparatus of FIG. 1.
Fig. 3 is a schematic view for explaining a manner of forming a film by the first embodiment.
Fig. 4 is a vertical sectional view showing a film deposition apparatus according to a second embodiment.
FIG. 5 is a view showing the relationship between the sputtering particle passage hole and the substrate in the film forming apparatus of FIG. 4.
Description of the symbols
1: film forming apparatus
10: processing chamber
10 a: chamber body
10 b: cover body
12: substrate support
14,14': substrate moving mechanism
16: target material support
18: power supply
20: sputtering particle shielding member
22: sputtering gas introduction part
24: reaction gas introduction part
26: exhaust mechanism
28: target material
36: sputtering particle shielding plate
37: sputtering particles through the holes
38: shielding component
S1: discharge space
S2: reaction chamber
S3: reaction space
W: substrate
Detailed Description
The embodiments are specifically described below with reference to the drawings.
< first embodiment >
First, a first embodiment will be explained.
Fig. 1 is a vertical sectional view showing a film deposition apparatus according to a first embodiment.
The film deposition apparatus 1 of the present embodiment is an apparatus for forming a film on a substrate W by reactive sputtering. The film forming apparatus 1 includes a
The
An
A
The
The sputtering
The
The
The
The reaction
The sputtering
The sputtering
The region in the
The sputtering
In the shielded discharge space S1, the sputtered particles are discharged obliquely downward from the
The sputtered particles have a smaller area than the substrate W through the
On the other hand, in the reaction chamber S2, the reaction gas is supplied while the sputtering particles are dropped from the discharge space S1 between the sputtering particle passage holes 37 and the substrate W, and the reaction space S3 in which the sputtering particles react with the reaction gas is formed. A compound to be formed is generated by the reaction in the reaction space S3, and a reactive sputtering film containing the compound is formed on the substrate W.
In this case, the distance between the sputtering
Further, the portions of the sputtering
The film forming apparatus 1 further includes a
Next, a film forming operation of the film forming apparatus configured as described above will be described.
First, the
Next, an inert gas such as Ar gas or Kr gas is introduced as a sputtering gas from the sputtering
Subsequently, while the substrate W placed on the
At this time, the sputtering gas introduced from the sputtering
In a conventional reactive sputtering apparatus, a reactive gas is often supplied into a discharge space where sputtered particles are released. In this case, the discharge space is generally covered with a shield, and a slit for introducing the reaction gas is formed in the shield. However, in order to suppress the leakage of the sputtering particles, when the gap is reduced, the reaction gas is hard to enter the discharge space and difficult to control, and thus the machining allowance tends to be reduced. On the other hand, if the reaction gas is sufficiently introduced, the reaction gas is excessively supplied, and there is a problem that the reaction occurs even on the target surface, the film formation rate is lowered, or waste (particles) is generated (Poisson model).
In addition, in the conventional reactive sputtering apparatus, a reactive sputtering film is deposited also on a shielding portion (inside of the sputtering
In the techniques of patent documents 1 and 2, the entrance of the reactive gas into the discharge space is suppressed by the pressure difference plate and the partition plate, and the reactive gas becomes difficult to reach the target. However, the sputtering particle passage holes formed in the pressure difference plate and the partition plate are formed wider than the substrate, and the intrusion of the reaction gas into the discharge space cannot necessarily be effectively suppressed.
In contrast, in the present embodiment, while the substrate W is linearly moved, the reaction gas is reacted with the reaction gas in the reaction space S3 outside the discharge space S1 by passing the sputter particles from the discharge space S1 through the sputter particle passage holes 37 having a smaller area than the substrate W.
Accordingly, the reaction gas can be supplied to the substrate W with a sufficiently large conductance without supplying the reaction gas to the discharge space with a small conductance, and thus, the processing margin can be increased. Further, since the sputtering particles pass through the
By separating the discharge space from the reaction space in this way, it is possible to prevent the sputtering particles from reacting with the reaction gas at the shielding portion (the sputtering
Further, when the discharge space S1 shielded by the sputtering
Further, by setting the distance between the sputtering
Further, since the portions of the sputtering
In the present embodiment, the shape of the sputtering
< second embodiment >
Next, a second embodiment will be described.
Fig. 4 is a vertical sectional view showing a film deposition apparatus according to a second embodiment.
The film deposition apparatus 1 'of the present embodiment is configured in the same manner as the film deposition apparatus 1 shown in fig. 1 except that a substrate transfer mechanism 14' is provided instead of the
The substrate moving mechanism 14' has a
In the present embodiment, reactive sputtering is performed in the same manner as in the first embodiment while the substrate W is rotated and moved by the substrate moving mechanism 14'.
In the present embodiment, the shape of the sputtering particle passage holes 37 formed in the sputtering
In the present embodiment, as in the first embodiment, the machining allowance can be increased, and the reaction gas is less likely to react in the discharge space. In addition, other effects of the first embodiment can be similarly exhibited.
< other applications >
The embodiments have been described above, but the embodiments disclosed herein are merely illustrative in all aspects and should not be considered as restrictive. In the above-described embodiment, various omissions, substitutions, and changes may be made without departing from the scope and spirit of the claims that follow.
For example, the method of releasing the sputtering particles in the above embodiment is merely an example, and the sputtering particles may be released by another method. In the above embodiment, an example in which the target is disposed obliquely to perform oblique film formation is described, but the present invention is not limited thereto, and the target may be disposed at the center. In the above-described embodiment, the movement in the horizontal plane of the base is described by taking the linear forward movement and the rotation as examples, but other movements such as swing may be used.