Electronic component manufacturing process and electronic component based on thick copper ceramic substrate
阅读说明：本技术 电子元件制作工艺及基于厚铜陶瓷基板的电子元件 (Electronic component manufacturing process and electronic component based on thick copper ceramic substrate ) 是由 邹时月 于 2019-11-21 设计创作，主要内容包括：本发明涉及一种电子元件的制作工艺,陶瓷基板上通过蚀刻工艺制作铜垫卡槽和卡接铜柱,在柔性基板上焊接硅芯片；柔性基板的厚度方向上设置有3个以上的卡接孔,陶瓷基板上设置有3个以上的卡接铜柱,卡接铜柱的直径为卡接孔的孔径的95％～99％,卡接铜柱与卡接孔装配,散热铜垫位于铜垫卡槽内,散热铜垫的周侧及底部与铜垫卡槽之间设置有3～20μm的间隙；通过镀铜工艺,填充散热铜垫的周侧及底部与铜垫卡槽之间的间隙,同时填充卡接铜柱与卡接孔之间的间隙,实现柔性基板与陶瓷基板的装配,柔性基板充当中介,利用电镀铜工艺实现芯片与陶瓷基板的散热铜垫卡槽一体化连接,能够大大提高散热效率。(The invention relates to a manufacturing process of an electronic element.A copper pad clamping groove and a clamping copper column are manufactured on a ceramic substrate through an etching process, and a silicon chip is welded on a flexible substrate; more than 3 clamping holes are formed in the thickness direction of the flexible substrate, more than 3 clamping copper columns are arranged on the ceramic substrate, the diameter of each clamping copper column is 95% -99% of the aperture of each clamping hole, each clamping copper column is assembled with each clamping hole, the heat dissipation copper pad is located in the copper pad clamping groove, and gaps of 3-20 microns are formed between the periphery and the bottom of the heat dissipation copper pad and the copper pad clamping groove; through the copper facing technology, fill the week side of heat dissipation copper blanket and the clearance between bottom and the copper blanket draw-in groove, fill the clearance between joint copper post and the joint hole simultaneously, realize the assembly of flexible base plate and ceramic substrate, the flexible base plate acts as the intermediary, utilizes the copper facing technology to realize that the heat dissipation copper blanket draw-in groove integration of chip and ceramic substrate is connected, can improve the radiating efficiency greatly.)
1. A process for making an electronic component, comprising:
A. manufacturing a copper pad clamping groove (21) and a clamping copper column (22) on a ceramic substrate (2) through an etching process, and welding a silicon chip (1) on a flexible substrate (3);
the flexible substrate is characterized in that more than 3 clamping holes (32) are formed in the thickness direction of the flexible substrate (3), more than 3 clamping copper columns (22) are arranged on the ceramic substrate (2), the diameter of each clamping copper column (22) is 95% -99% of the aperture of each clamping hole (32), each clamping copper column (22) is assembled with each clamping hole (32), the heat dissipation copper pad (31) is located in the copper pad clamping groove (21), and gaps of 3-20 mu m are formed between the peripheral sides and the bottom of the heat dissipation copper pad (31) and the copper pad clamping groove (21);
B. through the copper plating process, fill the week side and the bottom of heat dissipation copper pad (31) with the clearance between copper pad draw-in groove (21), fill joint copper post (22) simultaneously with the clearance between joint hole (32).
2. The manufacturing process based on electronic components as claimed in claim 1, wherein the number of the silicon chips (1) is more than 2, the flexible substrate (3) is provided with more than two heat dissipation copper pads (31), the heat dissipation copper pads (31) are located at the bottom of the silicon chips (1), and the ceramic substrate (2) is provided with more than 2 copper pad clamping grooves (21);
two copper pad draw-in grooves (21) have different bottom height, flexible base plate (3) are bent and are set up, 2 at least heat dissipation copper pad (31) are located in copper pad draw-in groove (21) of different height.
3. The electronic component-based manufacturing process of claim 2, wherein the copper plating process comprises electroless copper plating and electrolytic copper plating;
the thickness of the copper layer of the electroless copper plating is 1-5 mu m;
during the copper electroplating, a double-loop electroplating process is adopted, and electroplating clip clamping points are arranged on the ceramic substrate (2) and the flexible substrate (3) at the same time;
when the gap between the heat dissipation copper pad (31) and the copper pad clamping groove (21) is 4-20 microns, electroplating is carried out by adopting a double-loop electroplating process, and electroplating is carried out through electroplating clip clamping points on the ceramic substrate (2) and the flexible substrate (3); when the gap between the heat dissipation copper pad (31) and the copper pad clamping groove (21) is smaller than 4 mu m, a single-loop electroplating process is adopted, and electroplating is carried out only through the clamping points of the electroplating clips on the ceramic substrate (2) or the flexible substrate (3).
4. An electronic component based on a thick copper ceramic substrate comprises a silicon chip (1), and is characterized by further comprising a ceramic substrate (2) and a flexible substrate (3);
the silicon chip (1) is a chip with double-sided bonding pads, and the bottom surface of the silicon chip (1) is welded on the flexible substrate (3);
the flexible substrate (3) is provided with a heat dissipation copper pad (31), the heat dissipation copper pad (31) is positioned on one side or the bottom of the silicon chip (1), and the ceramic substrate (2) is provided with a copper pad clamping groove (21);
the flexible substrate is characterized in that more than 3 clamping holes (32) are formed in the thickness direction of the flexible substrate (3), more than 3 clamping copper columns (22) are arranged on the ceramic substrate (2), the diameter of each clamping copper column (22) is 95% -99% of the aperture of each clamping hole (32), the clamping copper columns (22) are assembled with the clamping holes (32), the heat dissipation copper pad (31) is located in the copper pad clamping groove (21), and gaps of 3-20 mu m are formed between the circumferential sides and the bottom of the heat dissipation copper pad (31) and the copper pad clamping groove (21);
through the copper facing technology, fill joint copper post (22) with clearance between joint hole (32), simultaneously, fill heat dissipation copper pad (31) with clearance between copper pad draw-in groove (21), realize flexible substrate (3) with the assembly of ceramic substrate (2).
5. The thick copper ceramic substrate-based electronic component according to claim 4, wherein the number of the silicon chips (1) is more than 2, the flexible substrate (3) is provided with more than two heat dissipation copper pads (31), the heat dissipation copper pads (31) are located at the bottom of the silicon chips (1), and the ceramic substrate (2) is provided with more than 2 copper pad clamping grooves (21);
two copper pad draw-in grooves (21) have different bottom height, flexible base plate (3) are bent and are set up, 2 at least heat dissipation copper pad (31) are located in copper pad draw-in groove (21) of different height.
6. The thick copper ceramic substrate-based electronic component according to claim 4, wherein said snap-in hole (32) is provided with a copper plated hole of a copper layer; the clamping copper column (22) is a copper clamping copper column;
the periphery of the clamping hole (32) is resin or a combination of resin and fiber.
7. The thick copper ceramic substrate-based electronic component according to claim 6, wherein said ceramic substrate (2) is a circuit board with copper layers on both sides, said ceramic substrate (2) is provided with a first circuit pattern, and said copper snap copper pillars are part of said first circuit pattern;
the flexible substrate (3) at least comprises more than two layers of second circuit patterns, and the copper-plated holes are part of the second circuit patterns;
and after the copper-plated hole and the copper clamping copper column are assembled through a copper plating process, the first circuit pattern and the second circuit pattern are assembled.
8. The thick copper ceramic substrate-based electronic component of claim 7, wherein said copper snap copper posts are higher than other portions of said first circuit pattern; the copper clamping copper column and the other parts of the first circuit pattern are made of the same copper layer of the ceramic substrate through different etching processes.
9. The thick copper ceramic substrate-based electronic component according to claim 8, wherein the insulating layer of the flexible substrate (3) is composed of one or two of polyimide, BT resin or epoxy resin; the insulating layer of the ceramic substrate (2) is aluminum oxide or aluminum nitride.
10. The electronic component based on the thick copper ceramic substrate as claimed in claim 8, wherein the bottom wall of the copper pad slot (21) is provided with a thermoelectric conversion layer (4), and the thermoelectric conversion layer (4) is tightly connected with the bottom wall of the heat dissipation copper pad (31) through a copper plating layer.
Technical Field
The invention relates to the technical field of electronic components, in particular to an electronic component manufacturing process and a manufactured electronic component based on a thick copper ceramic substrate.
Background
Electronic components have been flooded in all aspects of our lives.
The ceramic substrate means that a copper foil is directly bonded to alumina (Al) at a high temperature2O3) Or a special process board on the surface (single side or double side) of an aluminum nitride (AlN) ceramic substrate, wherein the thickness of the copper layer can be more than 2 mm. The prepared composite substrate has excellent electrical insulation performance, high heat conduction characteristic, excellent soft solderability and high adhesion strength, can be etched into various patterns like a PCB (printed circuit board), and has great current carrying capacity. Therefore, the ceramic substrate has become a basic material for high-power electronic circuit structure technology and interconnection technology.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the electronic element manufacturing process and the manufactured electronic element based on the thick copper ceramic substrate are high in heat dissipation efficiency.
A process for making an electronic component, comprising:
A. manufacturing a copper pad clamping groove and a clamping copper column on a ceramic substrate through an etching process, and welding a silicon chip on a flexible substrate;
more than 3 clamping holes are formed in the thickness direction of the flexible substrate, more than 3 clamping copper columns are arranged on the ceramic substrate, the diameter of each clamping copper column is 95% -99% of the aperture of each clamping hole, each clamping copper column is assembled with each clamping hole, the heat dissipation copper pad is located in the copper pad clamping groove, and gaps of 3-20 microns are formed between the periphery and the bottom of the heat dissipation copper pad and the copper pad clamping groove;
B. and gaps between the circumferential sides and the bottoms of the heat dissipation copper pads and the copper pad clamping grooves are filled through a copper plating process, and gaps between the clamping copper columns and the clamping holes are filled at the same time.
In this embodiment, the copper plating process includes electroless copper plating and electrolytic copper plating.
In this embodiment, the thickness of the copper layer of the electroless copper plating is 1 to 5 μm;
when electroplating copper, a double-loop electroplating process is adopted, and electroplating clip clamping points are arranged on the ceramic substrate and the flexible substrate at the same time;
when the gap between the heat dissipation copper pad and the copper pad clamping groove is 4-20 micrometers, electroplating is carried out by adopting a double-loop electroplating process, and electroplating is carried out through electroplating clip clamping points on the ceramic substrate and the flexible substrate; when the gap between the heat dissipation copper pad and the copper pad clamping groove is smaller than 4 micrometers, a single-loop electroplating process is adopted, and electroplating is carried out only through the clamping points of the electroplating clips on the ceramic substrate or the flexible substrate.
Preferably, the number of the silicon chips is more than 2, the flexible substrate is provided with more than two heat dissipation copper pads, the heat dissipation copper pads are positioned at the bottoms of the silicon chips, and the ceramic substrate is provided with more than 2 copper pad clamping grooves;
two copper pad draw-in grooves have different bottom heights, and the flexible substrate setting of bending, 2 at least heat dissipation copper pads are located the copper pad draw-in grooves of different heights.
An electronic component based on a thick copper ceramic substrate comprises a silicon chip, a ceramic substrate and a flexible substrate;
the silicon chip is a chip with double-sided bonding pads, and the bottom surface of the silicon chip is welded on the flexible substrate;
the flexible substrate is provided with a heat dissipation copper pad, the heat dissipation copper pad is positioned on one side or the bottom of the silicon chip, and the ceramic substrate is provided with a copper pad clamping groove;
more than 3 clamping holes are formed in the thickness direction of the flexible substrate, more than 3 clamping copper columns are arranged on the ceramic substrate, the diameter of each clamping copper column is 95% -99% of the aperture of each clamping hole, after the clamping copper columns and the clamping holes are assembled, the heat dissipation copper pad is located in the copper pad clamping groove, and gaps of 3-20 microns are formed between the periphery and the bottom of the heat dissipation copper pad and the copper pad clamping groove;
and through a copper plating process, filling a gap between the clamping copper column and the clamping hole, and simultaneously filling a gap between the heat dissipation copper pad and the copper pad clamping groove to realize the assembly of the flexible substrate and the ceramic substrate.
Preferably, the circumferential side of the snap-in hole is a resin or a combination of a resin and a fiber.
Preferably, the clamping hole is provided with a copper plating hole of a copper layer; the clamping copper column is a copper clamping copper column.
Preferably, the ceramic substrate is a circuit board with copper layers on two sides, the ceramic substrate is provided with a first circuit pattern, and the copper clamping copper column is a part of the first circuit pattern;
the flexible substrate at least comprises more than two layers of second circuit patterns, and the copper-plated holes are part of the second circuit patterns;
and after the copper-plated hole and the copper clamping copper column are assembled through a copper plating process, the first circuit graph and the second circuit graph are assembled.
Preferably, the copper clamping copper pillar is higher than other parts of the first circuit pattern; the copper clamping copper column and the other part of the first circuit pattern are made of the same copper layer of the ceramic substrate through different etching processes.
Preferably, the insulating layer of the flexible substrate is made of one or two of polyimide, BT resin and epoxy resin.
BT resin is a thermosetting resin formed by using Bismaleimide (BMI) and triazine as main resin components and adding an epoxy resin, a polyphenylene ether resin (PPE), an allyl compound, or the like as a modifying component, and is called BT resin.
Preferably, the insulating layer of the ceramic substrate is aluminum oxide or aluminum nitride.
Preferably, the bottom wall of the copper pad clamping groove is provided with a thermoelectric conversion layer, and the thermoelectric conversion layer is fixedly connected with the bottom wall of the heat dissipation copper pad through a copper plating layer.
Preferably, the copper plating process includes electroless copper plating and electrolytic copper plating.
Preferably, the thickness of the copper layer of the electroless copper plating is 1-5 μm;
when electroplating copper, a double-loop electroplating process is adopted, and electroplating clip clamping points are arranged on the ceramic substrate and the flexible substrate at the same time;
when the gap between the heat dissipation copper pad and the copper pad clamping groove is 4-20 micrometers, electroplating is carried out by adopting a double-loop electroplating process, and electroplating is carried out through electroplating clip clamping points on the ceramic substrate and the flexible substrate; when the gap between the heat dissipation copper pad and the copper pad clamping groove is smaller than 4 micrometers, a single-loop electroplating process is adopted, and electroplating is carried out only through the clamping points of the electroplating clips on the ceramic substrate or the flexible substrate.
Preferably, the number of the silicon chips is more than 2, the flexible substrate is provided with more than two heat dissipation copper pads, the heat dissipation copper pads are positioned at the bottoms of the silicon chips, and the ceramic substrate is provided with more than 2 copper pad clamping grooves;
two copper pad draw-in grooves have different bottom heights, and the flexible substrate setting of bending, 2 at least heat dissipation copper pads are located the copper pad draw-in grooves of different heights.
The invention has the beneficial effects that: the invention relates to a manufacturing process of an electronic element.A copper pad clamping groove and a clamping copper column are manufactured on a ceramic substrate through an etching process, and a silicon chip is welded on a flexible substrate; more than 3 clamping holes are formed in the thickness direction of the flexible substrate, more than 3 clamping copper columns are arranged on the ceramic substrate, the diameter of each clamping copper column is 95% -99% of the aperture of each clamping hole, each clamping copper column is assembled with each clamping hole, the heat dissipation copper pad is located in the copper pad clamping groove, and gaps of 3-20 microns are formed between the periphery and the bottom of the heat dissipation copper pad and the copper pad clamping groove; through the copper facing technology, fill the week side of heat dissipation copper blanket and the clearance between bottom and the copper blanket draw-in groove, fill the clearance between joint copper post and the joint hole simultaneously, realize the assembly of flexible base plate and ceramic substrate, the flexible base plate acts as the intermediary, utilizes the copper facing technology to realize that the heat dissipation copper blanket draw-in groove integration of chip and ceramic substrate is connected, can improve the radiating efficiency greatly.
The invention also relates to an electronic component based on the thick copper ceramic substrate, which comprises a silicon chip, a ceramic substrate and a flexible substrate; the silicon chip is a chip with double-sided bonding pads, and the bottom surface of the silicon chip is welded on the flexible substrate; the flexible substrate is provided with a heat dissipation copper pad, the heat dissipation copper pad is positioned on one side or the bottom of the silicon chip, and the ceramic substrate is provided with a copper pad clamping groove; more than 3 clamping holes are formed in the thickness direction of the flexible substrate, more than 3 clamping copper columns are arranged on the ceramic substrate, the diameter of each clamping copper column is 95% -99% of the aperture of each clamping hole, after the clamping copper columns and the clamping holes are assembled, the heat dissipation copper pad is located in the copper pad clamping groove, and gaps of 3-20 microns are formed between the periphery and the bottom of the heat dissipation copper pad and the copper pad clamping groove; and through a copper plating process, filling a gap between the clamping copper column and the clamping hole, and simultaneously filling a gap between the heat dissipation copper pad and the copper pad clamping groove to realize the assembly of the flexible substrate and the ceramic substrate. The flexible substrate serves as an intermediary, the flexible substrate can be made very thin, the BT and other high-heat-dissipation materials are used for manufacturing, the heat-dissipation copper pad at the bottom of the chip and the heat-dissipation copper pad clamping groove of the ceramic substrate are integrally connected by utilizing a copper plating process, and the heat-dissipation copper pad clamping groove and the large-area copper block on the periphery of the heat-dissipation copper pad clamping groove are integrally and tightly combined through the copper plating process, so that the heat-dissipation efficiency can be greatly improved.
Drawings
The electronic component based on the thick copper ceramic substrate of the present invention will be further described with reference to the accompanying drawings.
FIG. 1 is a flow chart of a manufacturing process of an electronic device according to the present invention.
Fig. 2 is an exploded view from a first perspective of an electronic component based on a thick copper ceramic substrate in accordance with the present invention.
Fig. 3 is an exploded view from a second perspective of an electronic component based on a thick copper ceramic substrate in accordance with the present invention.
Fig. 4 is an exploded view of an electronic component based on a thick copper ceramic substrate according to a third aspect of the present invention.
Fig. 5 is an exploded view of another embodiment of an electronic component based on a thick copper ceramic substrate in accordance with the present invention.
In the figure:
1-a silicon chip; 2-a ceramic substrate; 3-a flexible substrate; 31-a heat-dissipating copper pad; 32-a clamping hole; 21-copper pad slot; 22-clamping a copper column; 4-a thermoelectric conversion layer; 5-large area heat dissipation copper layer.
Detailed Description
The following describes a manufacturing process of an electronic component and a corresponding electronic component based on a thick copper ceramic substrate according to the present invention with reference to fig. 1 to 5.
First, a manufacturing process of the electronic device is described.
A process for making an electronic component, comprising:
A. manufacturing a copper
more than 3
B. gaps between the circumferential side and the bottom of the heat
In this embodiment, the copper plating process includes electroless copper plating and electrolytic copper plating.
In this embodiment, the thickness of the copper layer of the electroless copper plating is 1 to 5 μm;
when copper is electroplated, a double-loop electroplating process is adopted, and electroplating clip clamping points are arranged on the ceramic substrate 2 and the
when the gap between the heat
In this embodiment, the number of the
two copper pad draw-in
Then, an electronic component manufactured based on the above manufacturing process will be described.
An electronic component based on a thick copper ceramic substrate comprises a
the
the
more than 3 clamping holes 32 are formed in the thickness direction of the
and through a copper plating process, a gap between the clamping
In this embodiment, the
The flexible substrate serves as an intermediary, the flexible substrate can be made very thin, the BT and other high-heat-dissipation materials are used for manufacturing, the heat-dissipation copper pad at the bottom of the chip and the heat-dissipation copper pad clamping groove of the ceramic substrate are integrally connected by utilizing a copper plating process, and the heat-dissipation copper pad clamping groove and the large-area copper block on the periphery of the heat-dissipation copper pad clamping groove are integrally and tightly combined through the copper plating process, so that the heat-dissipation efficiency can be greatly improved.
In this embodiment, the circumferential side of the engaging
In this embodiment, the clamping
In this embodiment, the number of the
two copper pad draw-in
In this embodiment, the ceramic substrate 2 is a circuit board with copper layers on both sides, the ceramic substrate 2 is provided with a first circuit pattern, and the copper clamping copper pillar is a part of the first circuit pattern;
the
and after the copper-plated hole and the copper clamping copper column are assembled through a copper plating process, the first circuit graph and the second circuit graph are assembled.
In this embodiment, the copper clamping copper column is higher than other parts of the first circuit pattern; the copper clamping copper column and the other part of the first circuit pattern are made of the same copper layer of the ceramic substrate through different etching processes.
In this embodiment, the insulating layer of the
BT resin is a thermosetting resin formed by using Bismaleimide (BMI) and triazine as main resin components and adding an epoxy resin, a polyphenylene ether resin (PPE), an allyl compound, or the like as a modifying component, and is called BT resin.
In this embodiment, the insulating layer of the ceramic substrate 2 is aluminum oxide or aluminum nitride.
The ceramic substrate means that a copper foil is directly bonded to alumina (Al) at a high temperature2O3) Or a special process plate on the surface (single or double side) of an aluminum nitride (AlN) ceramic substrate. The manufactured ultrathin composite substrate has excellent electrical insulation performance, high heat conduction characteristic, excellent soft solderability and high adhesion strength, can be etched into various patterns like a PCB (printed circuit board), and has great current carrying capacity. Therefore, the ceramic substrate has become a basic material for high-power electronic circuit structure technology and interconnection technology.
In this embodiment, the bottom wall of the
In this embodiment, the copper plating process includes electroless copper plating and electrolytic copper plating.
In this embodiment, the thickness of the copper layer of the electroless copper plating is 1 to 5 μm;
when copper is electroplated, a double-loop electroplating process is adopted, and electroplating clip clamping points are arranged on the ceramic substrate 2 and the
when the gap between the heat
The present invention is not limited to the above embodiments, and the technical solutions of the above embodiments of the present invention may be combined with each other in a crossing manner to form a new technical solution, and all technical solutions formed by adopting equivalent substitutions fall within the protection scope of the present invention.
- 上一篇：一种医用注射器针头装配设备
- 下一篇：一种BGA焊接小圆PAD的PCB制作方法