阅读说明：本技术 成膜厚度检测装置、检测方法以及蒸镀设备 (Film formation thickness detection device, detection method and evaporation equipment ) 是由 赵迪 辛小刚 朱修剑 王宝友 孙飞 王卫卫 于 2019-11-27 设计创作，主要内容包括：本发明公开了一种成膜厚度检测装置、检测方法以及蒸镀设备,成膜厚度检测装置包括：晶振片,位于蒸镀源的蒸发侧,并与蒸镀源间隔设置,晶振片能够将晶振片上的成膜厚度信息转化为振动频率信息；导向组件,包括容纳腔以及与容纳腔连通的导向通道,容纳腔容纳晶振片,导向通道具有朝向蒸镀源的导入口,蒸镀源的蒸发材料能够经由导入口在导向通道的导向下到达晶振片成膜,其中,导入口能够在晶振片与蒸镀源之间移动以使导向通道伸缩。本发明提供的成膜厚度检测装置能够准确的对晶振片上的成膜厚度进行检测。(The invention discloses a film forming thickness detection device, a detection method and an evaporation device, wherein the film forming thickness detection device comprises: the crystal oscillator plate is positioned on the evaporation side of the evaporation source and is arranged at an interval with the evaporation source, and the crystal oscillator plate can convert film forming thickness information on the crystal oscillator plate into vibration frequency information; the guide assembly comprises an accommodating cavity and a guide channel communicated with the accommodating cavity, the accommodating cavity accommodates the crystal oscillator piece, the guide channel is provided with an introducing port facing the evaporation source, evaporation materials of the evaporation source can reach the crystal oscillator piece through the introducing port under the guide of the guide channel to form a film, and the introducing port can move between the crystal oscillator piece and the evaporation source to enable the guide channel to stretch and retract. The film formation thickness detection device provided by the invention can accurately detect the film formation thickness on the crystal oscillation piece.)

1. A film thickness detection apparatus is characterized by comprising:

the crystal oscillator plate is positioned on the evaporation side of the evaporation source and is arranged at an interval with the evaporation source, and the crystal oscillator plate can convert film forming thickness information on the crystal oscillator plate into vibration frequency information;

a guide assembly including a housing chamber and a guide passage communicated with the housing chamber, the housing chamber housing the crystal oscillator plate, the guide passage having an introduction port facing the evaporation source, the evaporation material of the evaporation source being capable of reaching the crystal oscillator plate to form a film via the introduction port under the guidance of the guide passage,

wherein the introduction port is movable between the wafer and the evaporation source to expand and contract the guide passage.

2. The film formation thickness detection apparatus according to claim 1, wherein the film formation thickness detection apparatus has a first state in which the introduction port cover is provided on the vapor deposition source.

3. The film formation thickness detection apparatus according to claim 1, wherein the film formation thickness detection apparatus has a second state in which the introduction port is provided at a distance from the vapor deposition source and the introduction port has a predetermined distance from the wafer;

preferably, the preset distance is 10mm to 15 mm.

4. The film formation thickness detection apparatus according to claim 1, wherein the guide assembly includes a fixing member and a guide cylinder connected to each other, the accommodation chamber is provided in the fixing member, at least a part of the guide passage is provided in the guide cylinder,

the fixing piece and the guide cylinder are sleeved with each other and movably connected with each other; and/or the guide cylinder comprises a telescopic unit, and the telescopic unit can be telescopic between the crystal oscillator plate and the evaporation source.

5. The film formation thickness detection apparatus according to claim 4, wherein the guide assembly further includes a slide assembly by which the fixed member and the guide cylinder are slidably connected to each other;

preferably, the sliding assembly includes a sliding rail and a sliding block slidably matched with the sliding rail, the sliding rail is connected to one of the fixed member and the guide cylinder, and the sliding block is connected to the other of the fixed member and the guide cylinder.

6. The film formation thickness detection apparatus according to claim 5, wherein the guide cylinder includes:

the cylinder comprises a sliding part and an extending part which are connected with each other, the sliding part is sleeved on the inner peripheral surface side of the fixed part, and the extending part is arranged on one side of the sliding part away from the fixed part;

and the connecting piece is connected with the extending part and connects the cylinder with the sliding assembly.

7. The film formation thickness detection apparatus according to claim 4, wherein the guide cylinder is fitted on an outer peripheral surface side of the fixing member, and the guide assembly further includes a driving member including a telescopic rod connected to the guide cylinder, the telescopic rod being capable of telescopic movement to drive the guide cylinder to move between the crystal oscillator plate and the evaporation source.

8. The film formation thickness detection apparatus according to any one of claims 1 to 7, further comprising:

the carrying platform is connected with the guide assembly and comprises a connecting port which is used for accessing an external electric signal;

preferably, the guide assembly further comprises a housing, the housing is arranged on one side of the fixing piece far away from the guide cylinder, the housing comprises an accommodating part communicated with the accommodating cavity, the accommodating part is used for accommodating a connecting wire connected with the crystal oscillator wafer, and the connecting wire is connected with the connecting port;

preferably, the film formation thickness detection device further includes a bellows disposed between the housing and the stage, and the connection line is disposed inside the bellows;

preferably, the film formation thickness detection device further includes a position acquisition member provided to the introduction port, the position acquisition member being configured to acquire positional information between the evaporation source and the introduction port.

9. An evaporation apparatus, comprising:

a vapor deposition source;

the film formation thickness detection apparatus according to any one of claims 1 to 8.

10. A film formation thickness detection method for performing detection by the film formation thickness detection apparatus according to any one of claims 1 to 8, the detection method comprising:

starting an evaporation source to enable the evaporation source to generate an evaporation material;

pre-coating a film on a crystal oscillator wafer, wherein the step of covering the introducing port on the evaporation source is carried out, and the evaporation material of the evaporation source reaches the crystal oscillator wafer through the introducing port under the guidance of the guide channel to form a film;

the introducing port is arranged far away from the evaporation source, so that a preset distance is reserved between the introducing port and the crystal oscillator piece;

and simultaneously evaporating the device to be film-formed and the crystal oscillator plate after pre-coating, and obtaining film-forming thickness information on the crystal oscillator plate according to the vibration frequency information of the crystal oscillator plate.

Technical Field

The invention relates to the field of evaporation, in particular to a film forming thickness detection device, a detection method and evaporation equipment.

Background

With the progress of science and technology and the development of society, people have higher and higher requirements on display devices, and further, the standards of devices and processes for preparing the display devices are promoted to be higher and higher. Since the Organic Light-emitting diode (OLED) has the advantages of self-luminescence, no need of a backlight source, high contrast, thin thickness, wide viewing angle, simple structure and process, etc., the OLED display panel is widely used.

One of the most important parts in the production process of OLED display panels is to apply organic layers onto a substrate to be evaporated to form a key light emitting element. At present, evaporation process is mainly adopted, after a substance to be formed into a film is heated, evaporated or sublimated, the substance is condensed or deposited on the surface of a low-temperature workpiece or a substrate to be evaporated, so as to form a film layer structure of the OLED display panel. However, the thickness of the film layer structure of the OLED display panel will affect the performance of the OLED display panel, and if the film layer structure of the OLED display panel can be accurately tested, the film layer structure will have a positive effect on the aspects of improving the quality of the OLED display panel and the like.

Disclosure of Invention

The embodiment of the invention provides a film formation thickness detection device, a film formation thickness detection method and evaporation equipment, which can accurately detect the film formation thickness on a crystal oscillator wafer.

In one aspect, an embodiment of the present invention provides a film formation thickness detection apparatus, including: the crystal oscillator plate is positioned on the evaporation side of the evaporation source and is arranged at an interval with the evaporation source, and the crystal oscillator plate can convert film forming thickness information on the crystal oscillator plate into vibration frequency information; the guide assembly comprises an accommodating cavity and a guide channel communicated with the accommodating cavity, the accommodating cavity accommodates the crystal oscillator piece, the guide channel is provided with an introducing port facing the evaporation source, evaporation materials of the evaporation source can reach the crystal oscillator piece through the introducing port under the guide of the guide channel to form a film, and the introducing port can move between the crystal oscillator piece and the evaporation source to enable the guide channel to stretch and retract.

According to an embodiment of one aspect of the present application, the film formation thickness detection apparatus has a first state in which the introduction port is provided in the vapor deposition source.

According to one aspect of the present invention, in any one of the embodiments described above, the film formation thickness detection device has a second state in which the introduction port is provided at a distance from the deposition source and the introduction port has a predetermined distance from the wafer; optionally, the preset distance is 10 mm-15 mm.

According to one aspect of the present application, in any one of the embodiments described above, the guiding assembly includes a fixing member and a guiding cylinder connected to each other, the accommodating cavity is disposed in the fixing member, and at least a part of the guiding channel is disposed in the guiding cylinder, wherein the fixing member and the guiding cylinder are sleeved with each other and movably connected to each other; and/or the guide cylinder comprises a telescopic unit, and the telescopic unit can be telescopic between the crystal oscillator plate and the evaporation source.

According to one aspect of the present application, in any one of the embodiments, the guide assembly further includes a sliding assembly, and the fixing member and the guide cylinder are slidably connected to each other through the sliding assembly; optionally, the sliding assembly includes a sliding rail and a sliding block slidably matched with the sliding rail, the sliding rail is connected to one of the fixing member and the guide cylinder, and the sliding block is connected to the other of the fixing member and the guide cylinder.

According to an aspect of the present application, in any of the preceding embodiments, the guide cylinder comprises: the cylinder comprises a sliding part and an extending part which are connected with each other, the sliding part is sleeved on the inner peripheral surface side of the fixed part, and the extending part is arranged on one side of the sliding part away from the fixed part; the connecting piece is connected with the extending part and connects the cylinder with the sliding assembly; optionally, along the extending direction of the cylinder, the projection of the extending part surrounds the projection of the sliding part.

According to the aforesaid arbitrary embodiment of this application on one hand, the guide cylinder cover is established at the periphery side of mounting, and the direction subassembly still includes the driving piece, and the driving piece includes the telescopic link, and the telescopic link is connected with the guide cylinder, and the telescopic link can concertina movement in order to drive the guide cylinder and remove between crystal oscillator piece and coating by vaporization source.

According to an aspect of the present application, in any of the preceding embodiments, further comprising: the carrying platform is connected with the guide assembly and comprises a connecting port which is used for accessing an external electric signal; optionally, the guide assembly further includes a housing, the housing is disposed on one side of the fixing member away from the guide cylinder, the housing includes an accommodating portion communicated with the accommodating cavity, the accommodating portion is used for accommodating a connecting wire connected with the crystal oscillator wafer, and the connecting wire is connected with the connecting port; optionally, the film formation thickness detection device further comprises a wave hose, the wave hose is arranged between the shell and the carrier, and the connecting line is arranged inside the wave hose; optionally, the film thickness detection device further includes a position acquisition member, the position acquisition member is disposed at the introduction port, and the position acquisition member is used for acquiring position information between the evaporation source and the introduction port.

On the other hand, an embodiment of the present invention further provides an evaporation apparatus, including: a vapor deposition source; the film formation thickness detection apparatus described above.

In another aspect, an embodiment of the present invention further provides a film thickness detection method, which performs detection by using the film thickness detection apparatus, where the detection method includes: starting the evaporation source to enable the evaporation source to generate evaporation materials; pre-coating a film on the crystal oscillator plate, wherein an introducing port is covered on an evaporation source, so that an evaporation material of the evaporation source reaches the crystal oscillator plate through the introducing port under the guidance of a guide channel to form a film; the lead-in port is arranged far away from the evaporation source, so that a preset distance is reserved between the lead-in port and the crystal oscillator plate; and simultaneously evaporating the device to be film-formed and the crystal oscillator plate after pre-coating, and obtaining the film-forming thickness information on the crystal oscillator plate according to the vibration frequency information of the crystal oscillator plate.

According to the film formation thickness detection device, the detection method and the evaporation equipment provided by the embodiment of the invention, the film formation thickness detection device comprises the crystal oscillator piece and the guide assembly, the guide assembly comprises the accommodating cavity and the guide channel communicated with the accommodating cavity, and the guide channel is provided with the introducing port facing the evaporation source, so that the evaporation material of the evaporation source can reach the crystal oscillator piece through the introducing port under the guide effect of the guide channel to form a film. Because the evaporation direction of the evaporation material of the evaporation source is relatively divergent, the evaporation material reaching the crystal oscillator piece can be guided by arranging the guide channel. Furthermore, the guiding channel can move between the crystal oscillator plate and the evaporation source through the arrangement of the guiding opening so as to stretch and contract, and the guiding effect on the evaporation material is better adjusted. For example, by moving the introducing port close to the evaporation source, the whole evaporation process of the evaporation material from the position close to the evaporation source to the position reaching the crystal oscillator plate can be guided by the guide channel, so that the film forming compactness of the crystal oscillator plate can be effectively improved, the diffusion loss of the evaporation material can be prevented, and the film forming efficiency of the crystal oscillator plate can be improved.

Further, the crystal oscillator piece is arranged in the accommodating cavity, the crystal oscillator piece can convert film forming thickness information on the crystal oscillator piece into vibration frequency information, and specifically, the film forming thickness on the crystal oscillator piece is obtained according to the piezoelectric effect and the mass load effect of the crystal oscillator piece. When the film thickness detection device is applied to the evaporation equipment, the crystal oscillator plate needs to be pre-coated due to poor adhesion of the evaporation material on the crystal oscillator plate or the evaporation material is easily oxidized on the crystal oscillator plate. The guide channel can stretch out and draw back between the evaporation source and the crystal oscillator plate through the movement of the guide opening of the guide assembly, and when the guide opening is moved to be close to the evaporation source, more evaporation materials can reach the crystal oscillator plate under the guide effect, so that the pre-coating of the crystal oscillator plate can be completed quickly and in high quality. After the pre-coating of the crystal oscillation piece is finished, the introducing port can be moved away from the evaporation source by moving the introducing port, so that the evaporation material of the evaporation source is evaporated on the substrate to be evaporated and the crystal oscillation piece at the same time. Because the crystal oscillator piece and the substrate to be evaporated are evaporated simultaneously, the film thickness on the substrate to be evaporated can be further obtained by detecting the film thickness on the crystal oscillator piece.

Drawings

Other features, objects and advantages of the invention will become apparent from the following detailed description of non-limiting embodiments thereof, when read in conjunction with the accompanying drawings, in which like reference characters designate the same or similar parts throughout the figures thereof, and which are not to scale.

Fig. 1 is a structural view of a vapor deposition apparatus provided in an embodiment of the present invention;

FIG. 2 is a longitudinal sectional view of a film formation thickness detection apparatus according to an embodiment of the present invention;

FIG. 3 is a longitudinal sectional view of a film formation thickness detection apparatus according to another embodiment of the present invention;

fig. 4 is a longitudinal sectional view of a film formation thickness detection apparatus according to an embodiment of the present invention, in a first state, in cooperation with an evaporation source;

fig. 5 is a longitudinal sectional view of the film formation thickness detection apparatus according to the embodiment of the present invention, in a second state, in cooperation with an evaporation source;

fig. 6 is a flowchart of a method for detecting a film thickness according to an embodiment of the present invention.

In the figure:

1-evaporation equipment; 101-an evaporation source; 102-an evaporation chamber; 103-evaporation mask; 1031-central axis; 104-a substrate to be evaporated; m-an evaporation material;

100-film formation thickness detection means;

10-a crystal oscillator plate;

20-a guide assembly; 21-a fixing member; 211-a containment chamber; 212-first opening; 22-a guide cylinder; 221-a guide channel; 222-an introduction port; 223-a cylinder body; 2231-a sliding part; 2232-an extension; 224-a connector; 225-a second opening; 23-a sliding assembly; 231-a slider; 232-a slide rail; 24-a drive member; 241-a telescopic rod; 25-linear bearings;

31-position acquisition member; 32-a housing; 321-a receiving part;

40-a carrier; 41-connection port;

51-wave hose; 52-connecting wire.

Detailed Description

Features and exemplary embodiments of various aspects of the present invention will be described in detail below, and in order to make objects, technical solutions and advantages of the present invention more apparent, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not to be construed as limiting the invention. It will be apparent to one skilled in the art that the present invention may be practiced without some of these specific details. The following description of the embodiments is merely intended to provide a better understanding of the present invention by illustrating examples of the present invention.

It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.

It will be understood that when a layer, region or layer is referred to as being "on" or "over" another layer, region or layer in describing the structure of the component, it can be directly on the other layer, region or layer or intervening layers or regions may also be present. Also, if the component is turned over, one layer or region may be "under" or "beneath" another layer or region.

Features and exemplary embodiments of various aspects of the present invention will be described in detail below. Furthermore, the described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.

For better understanding of the present invention, the film formation thickness detection device, the evaporation apparatus, and the film formation thickness detection method according to the embodiments of the present invention will be described in detail below with reference to fig. 1 to 6.

Referring to fig. 1 to 5 together, fig. 1 shows a structure diagram of an evaporation apparatus according to an embodiment of the present invention, fig. 2 shows a longitudinal sectional view of a film formation thickness detection device according to an embodiment of the present invention, fig. 3 shows a longitudinal sectional view of a film formation thickness detection device according to another embodiment of the present invention, fig. 4 shows a longitudinal sectional view of a film formation thickness detection device according to an embodiment of the present invention, which is engaged with an evaporation source in a first state, and fig. 5 shows a longitudinal sectional view of a film formation thickness detection device according to an embodiment of the present invention, which is engaged with an evaporation source in a second state.

The embodiment of the invention provides an evaporation equipment 1, which comprises an evaporation source 101, an evaporation chamber 102 and a film forming thickness detection device 100, wherein the evaporation source 101 and the film forming thickness detection device 100 are arranged in the evaporation chamber 102, an evaporation material M is evaporated by the evaporation source 101 so as to evaporate a substrate 104 to be evaporated, which is arranged in the evaporation chamber 102, and the film forming thickness detection device 100 is used for detecting the film forming thickness on the substrate 104 to be evaporated.

In some optional embodiments, the evaporation source 101 comprises an evaporation crucible comprising evaporation source openings, the evaporation apparatus 1 further comprises an evaporation shield 103 arranged within the evaporation chamber 102, the evaporation shield 103 being rotatable around the central axis 1031 to cover the evaporation source openings.

In a specific implementation, when the substrate 104 to be vapor deposited needs to be replaced in the vapor deposition apparatus 1, the vapor deposition cover 103 may be rotated around the central axis 1031 to cover the vapor deposition source opening with the vapor deposition cover 103, so that the vapor deposition cover 103 shields the evaporation material M, thereby reducing interference with the replacement substrate 104 to be vapor deposited. Alternatively, the evaporation mask 103 may be provided with evaporation holes, and when the evaporation apparatus 1 needs to evaporate the substrate 104 to be evaporated, the evaporation material M is evaporated through the evaporation holes to adjust the evaporation material M. Through set up evaporation coating cover 103 in evaporation coating equipment 1, can carry out better regulation or shelter from evaporation material M, improve the homogeneity of treating evaporation coating substrate 104 coating by vaporization. The structure of the evaporation cover 103 may be a hemispherical structure or a flat plate structure, as long as it can shield the evaporation source opening and adjust the evaporation material M evaporated from the evaporation source 101.

Since the film formation thickness on the substrate 104 to be vapor-deposited has an influence on the performance of the functional film layer of the display panel, the film formation thickness on the substrate 104 to be vapor-deposited needs to be detected. In order to detect the film formation thickness on the substrate 104 to be evaporated and improve the evaporation quality of the substrate 104 to be evaporated, the embodiment of the invention further provides a film formation thickness detection device 100, and the film formation thickness detection device 100 can be produced and sold separately as an independent component, and can also be used in cooperation with the evaporation source 101 and the evaporation cover 103 of the above embodiments, so as to improve the accuracy of detecting the film formation thickness on the substrate 104 to be evaporated.

In order to detect the film formation thickness on the substrate 104 to be evaporated during evaporation, in some embodiments, the film formation thickness detection device 100 includes a crystal oscillator plate 10, and the crystal oscillator plate 10 is located in the evaporation chamber 102 of the evaporation apparatus 1 or located in a chamber communicated with the evaporation chamber 102, so that when the evaporation apparatus 1 performs evaporation on a component to be evaporated, for example, the substrate 104 to be evaporated, the evaporation material M is deposited on the surface of the crystal oscillator plate 10 and forms a target film layer, and also deposited on the surface of the crystal oscillator plate 10 and forms a film layer. When the surface of the crystal oscillator piece 10 changes in mass and volume due to the deposition of a film layer, the crystal oscillator piece 10 generates a large and easily detectable amplitude change under the action of the piezoelectric effect and the mass load, so that the film formation thickness detection device 100 can detect the film thickness change on the crystal oscillator piece 10 through the change of parameters such as amplitude and the like, thereby monitoring the evaporation rate of the film layer on the crystal oscillator piece 10, and further monitoring the evaporation rate of the whole evaporation device 1 and the thickness of a target film layer on the substrate 104 to be evaporated.

The evaporation material M of the evaporation source 101 is a material to be film-formed, that is, after the evaporation material M is evaporated on the substrate 104 to be evaporated, the evaporation material M is film-formed on the substrate 104 to be evaporated for preparing a functional film layer of a display panel.

Since the evaporation material M, such as the evaporation material M for making the cathode, is outgassed when being heated during the evaporation process, the vacuum degree in the evaporation chamber 102 may be changed, and further the evaporation material M is easily oxidized when being evaporated on the crystal oscillation plate 10; or the adhesion of the evaporation material M such as magnesium or silver to the crystal oscillating plate 10 is poor, which may cause the crystal oscillating plate 10 to have inaccurate detection of the film thickness. Therefore, before the film formation thickness detection device 100 is used to detect the film formation thickness of the substrate 104 to be evaporated, the crystal oscillator plate 10 needs to be pre-evaporated, so that the crystal oscillator plate 10 already forms a film layer with a predetermined thickness before the film layer thickness detection, and inaccurate detection of the film formation thickness due to oxidation of the evaporation material M in the detection process is prevented.

To solve the above problem, referring to fig. 2 to 5, an embodiment of the invention provides a film thickness detection apparatus 100, which includes a crystal plate 10 and a guide element 20. The crystal oscillator plate 10 is located on the evaporation side of the evaporation source 101 and is arranged at an interval with the evaporation source 101, the crystal oscillator plate 10 is at a preset interval distance from the evaporation source 101, the crystal oscillator plate 10 can convert film formation thickness information on the crystal oscillator plate 10 into vibration frequency information, and specifically, the crystal oscillator plate 10 can detect the film formation thickness on the crystal oscillator plate 10 according to the piezoelectric effect and the mass load effect. The guide assembly 20 comprises a containing cavity 211 and a guide channel 221 communicated with the containing cavity 211, the containing cavity 211 contains the crystal oscillator piece 10, the guide channel 221 is provided with an introducing port 222 facing the evaporation source 101, the evaporation material M of the evaporation source 101 can reach the crystal oscillator piece 10 to form a film under the guide of the guide channel 221 through the introducing port 222, and the introducing port 222 can move between the crystal oscillator piece 10 and the evaporation source 101 to enable the guide channel 221 to stretch and contract.

The guide passage 221 is a passage through which the introduction port 222 extends between the surface of the crystal plate 10 facing the vapor deposition source 101, and the guide passage 221 guides the evaporation material M deposited on the crystal plate 10. The receiving cavity 211 may at least partially overlap with the guide channel 221 in the extending direction of the guide member 20, and of course, the receiving cavity 211 may not overlap with the guide channel 221 in the extending direction of the guide member 20.

In some embodiments, the film thickness detection apparatus 100 further includes a detection unit located in the evaporation chamber 102 and electrically connected to the crystal oscillator plate 10, and the detection unit is configured to acquire vibration frequency information of the crystal oscillator plate 10 and output film thickness information of the crystal oscillator plate 10.

In the film formation thickness detection apparatus 100 according to the embodiment of the present invention, the guide passage 221 is extended and contracted by moving the introduction port 222 between the crystal oscillator plate 10 and the vapor deposition source 101, so that the guiding function of the guide passage 221 with respect to the evaporation material M of the vapor deposition source 101 is adjusted. For example, by moving the introduction port 222 close to the vapor deposition source 101, the entire evaporation process of the evaporation material M from the point of close to the vapor deposition source 101 to the point of reaching the crystal oscillator plate 10 can be guided by the guide passage 221, and thus the film formation density of the crystal oscillator plate 10 can be effectively improved, and the diffusion loss of the evaporation material M can be prevented, thereby improving the film formation efficiency of the crystal oscillator plate 10. Referring to fig. 4, in some alternative embodiments, the film thickness detection apparatus 100 has a first state in which the introduction port 222 is covered on the evaporation source 101, and optionally, the introduction port 222 is covered on the evaporation source opening of the evaporation source 101. The first state is a state in which the pre-plating is performed on the wafer 10 of the film thickness detection apparatus 100.

The introduction port 222 is covered on the evaporation source 101, so that the evaporation material M can be guided by the guide channel 221 from the evaporation source 101 to the crystal oscillator piece 10, on one hand, the evaporation direction of the evaporation material M is uniform, the compactness of the pre-coating film on the crystal oscillator piece 10 is improved, the uneven thickness of the pre-coating film on the crystal oscillator piece 10 caused by the deviation of the guide assembly 20 or the large distance between the guide channel 221 and the evaporation source 101 is avoided, and the success rate of the pre-coating film on the crystal oscillator piece 10 is improved. On the other hand, the evaporation material M can be guided by the guide channel 221 from the evaporation source 101 to the crystal oscillator plate 10, so that the diffusion loss of the evaporation material M can be effectively reduced, substantially all the evaporation material M evaporated from the evaporation source 101 is used for pre-coating the crystal oscillator plate 10, the efficiency of pre-coating the crystal oscillator plate 10 is improved, and the utilization rate of the evaporation material M is improved.

Referring to fig. 5, in some alternative embodiments, the film thickness detection apparatus 100 further has a second state in which the introduction port 222 is spaced apart from the evaporation source 101 and the introduction port 222 is spaced apart from the wafer 10 by a predetermined distance. The second state is a state in which the deposition apparatus 1 detects the film thickness on the substrate 104 to be deposited by the film thickness detection device 100 during deposition of the substrate 104 to be deposited.

In the second state, the introducing port 222 and the evaporation source 101 are arranged at an interval, and a preset distance is reserved between the introducing port 222 and the crystal oscillator piece 10, so that the evaporation material M of the evaporation source 101 can reach the substrate 104 to be evaporated and the crystal oscillator piece 10 at the same time, the crystal oscillator piece 10 detects the film forming thickness on the crystal oscillator piece 10 according to the piezoelectric effect and the mass load effect, and the film thickness change on the crystal oscillator piece 10 is detected, so that the evaporation rate of the film layer on the crystal oscillator piece 10 is monitored, and the evaporation rate of the whole evaporation device 1 and the thickness of the target film layer on the substrate 104 to be evaporated are further accurately monitored.

Optionally, the preset distance is 10 mm-15 mm. When the evaporation source 101 of the embodiment of the invention evaporates a target film layer on the substrate 104 to be evaporated, the substrate 104 to be evaporated and an evaporation mask plate covering the substrate 104 to be evaporated are arranged above the evaporation source 101, and an evaporation material M evaporated by the evaporation source 101 is evaporated upwards and deposited on the position, corresponding to the hollow position on the evaporation mask plate, of the substrate 104 to be evaporated. By setting a reasonable preset distance, the wafer 10 can be prevented from being damaged. After the evaporation is completed, the evaporation mask is removed, and a target film layer matched with the pattern on the evaporation mask is formed on the substrate 104 to be evaporated. In order to accurately detect the film formation thickness on the substrate 104 to be evaporated, the preset distance may be the same as the thickness of the evaporation mask on the substrate 104 to be evaporated.

To better effect the movement of introduction port 222, in some embodiments, guide assembly 20 includes a fixing member 21 and a guide cylinder 22 connected to each other, receiving cavity 211 is disposed in fixing member 21, and at least a portion of guide channel 221 is disposed in guide cylinder 22. Wherein, the fixing member 21 and the guiding cylinder 22 are sleeved with each other and movably connected with each other; and/or, the guide cylinder 22 includes a telescopic unit which can be telescopic between the crystal oscillator plate 10 and the evaporation source 101. With the above arrangement, the introduction port 222 can stably move between the wafer 10 and the vapor deposition source 101.

In an implementation, referring to fig. 3, the fixing member 21 may include a first opening 212 communicating with the accommodating cavity 211, and the guide channel 221 further includes a second opening 225 facing the wafer 10, wherein the accommodating cavity 211 and the guide channel 221 communicate with each other through the first opening 212 and the second opening 225. The crystal oscillator plate 10 is fixedly arranged in the fixing part 21, so that the vibration frequency of the crystal oscillator plate 10 is prevented from changing due to movement, and the accuracy of the crystal oscillator plate 10 in detecting the thickness of the formed film is improved.

Referring to fig. 2, in some embodiments, the guiding cylinder 22 is sleeved on the outer peripheral side of the fixing member 21, the guiding assembly 20 further includes a driving member 24, the driving member 24 includes a telescopic rod 241, the telescopic rod 241 is connected to the guiding cylinder 22, and the telescopic rod 241 can move telescopically to drive the guiding cylinder 22 to move between the crystal oscillator plate 10 and the evaporation source 101. With the above arrangement, the guide cylinder 22 can move along a predetermined trajectory, and the guide passage 221 can be extended and contracted. Of course, the guiding cylinder 22 itself may also include a telescopic unit, and the telescopic of the guiding channel 221 is realized by the movement of the guiding cylinder 22 along a predetermined track and the telescopic setting of itself.

In order to stably and slidably connect the guide cylinder 22 and the fixing member 21, a linear bearing 25 may be further provided between the guide cylinder 22 and the fixing member 21. Since the guide channel 221 is a channel extending from the introduction port 222 to the surface of the crystal oscillator plate 10 facing the evaporation source 101, in fig. 2, the guide channel 221 partially overlaps the accommodation chamber 211, and the overlapping portion between the guide channel 221 and the accommodation chamber 211 is increased or decreased by the relative movement of the guide cylinder 22 and the fixing member 21, so that the guide channel 221 is lengthened or shortened.

Referring further to fig. 3, in order to allow the relative movement between the fixing member 21 and the guiding cylinder 22, the guiding assembly 20 further includes a sliding assembly 23, and the fixing member 21 and the guiding cylinder 22 are slidably connected to each other by the sliding assembly 23. Optionally, the sliding assembly 23 includes a sliding rail 232 and a sliding block 231 slidably matched with the sliding rail 232, the sliding rail 232 is connected to one of the fixing member 21 and the guiding cylinder 22, and the sliding block 231 is connected to the other of the fixing member 21 and the guiding cylinder 22. Through the above arrangement, the sliding assembly 23 drives the fixing member 21 or the guide cylinder 22 to move linearly along the fixed track, so as to achieve the extension and contraction of the guide channel 221.

In some alternative embodiments, the guiding cylinder 22 includes a cylinder body 223 and a connecting member 224, the cylinder body 223 includes a sliding portion 2231 and an extending portion 2232 connected with each other, the sliding portion 2231 is disposed on the inner peripheral side of the fixing member 21, the sliding portion 2231 can extend into the accommodating cavity 211, and the extending portion 2232 is disposed on the side of the sliding portion 2231 away from the fixing member 21. Connector 224 is coupled to extension 2232, and connector 224 couples barrel 223 to slide assembly 23. At this time, the guide channel 221 and the accommodating cavity 211 are at least partially overlapped, and the cylinder 223 is sleeved on the inner peripheral surface side of the fixing member 21, so that more evaporation material M can reach the crystal oscillator piece 10 in the process that the guide cylinder 22 slides relative to the fixing member 21, the loss of the evaporation material M is reduced, and the efficiency of pre-coating the crystal oscillator piece 10 is further improved.

Alternatively, the projection of the extension part 2232 surrounds the projection of the sliding part 2231 in the extending direction of the cylinder 223. Through the above arrangement, the extension part 2232 can be more conveniently covered above the evaporation source 101, so that the guide cylinder 22 is prevented from damaging the evaporation source 101 in the moving process, and more evaporation materials M can pass through the guide cylinder.

In order to prevent the guide cylinder 22 from damaging the vapor deposition source 101 when the guide cylinder 22 slides relative to the fixing member 21 or the guide cylinder 22 itself moves in an extendable and retractable manner, in some embodiments, the film formation thickness detection apparatus 100 according to the embodiment of the present invention further includes a position detector 31, and the position detector 31 is disposed in the introduction port 222. Alternatively, the position collecting member 31 is located in the guide passage 221 and close to the introduction port 222, and the position collecting member 31 is configured to collect position information between the vapor deposition source 101 and the introduction port 222. Alternatively, the position acquisition member 31 is located in the guide cylinder 22, and the position acquisition member 31 may be a displacement sensor. When the position detecting member 31 detects that the introduction port 222 is covered a predetermined distance above the vapor deposition source 101, the movement of the guide cylinder 22 or the telescopic movement of the telescopic unit is stopped, thereby improving the stability of the film formation thickness detection apparatus 100 and preventing damage to the vapor deposition source 101.

In some embodiments, the film thickness detection apparatus 100 further includes a control component connected to the crystal plate 10 and the position acquisition member 31 to realize fast switching between the first state and the second state.

In an implementation, referring to fig. 4, the control module controls the guide cylinder 22 to slide relative to the fixing member 21 toward the evaporation source 101, so that the guide channel 221 is elongated. When the position collecting member 31 collects the lead-in port 222 and covers a predetermined distance above the evaporation source 101, the control unit controls to stop the movement of the guide cylinder 22 or the telescopic movement of the telescopic unit so as to enable the film formation thickness detection device 100 to be in the first state, thereby realizing the pre-coating of the crystal oscillator piece 10.

After the pre-evaporation is finished, referring to fig. 5, the control module controls the guide cylinder 22 to slide in a direction away from the evaporation source 101, and shortens the guide channel 221, so that the film formation thickness detection device 100 is in the second state, and the film formation thickness is detected by the crystal oscillator 10. Because the pre-coating film of the crystal oscillator plate 10 has good compactness when the film thickness detection device 100 provided by the embodiment of the invention is in the first state, when the film thickness detection device 100 is switched from the first state to the second state, the crystal oscillator plate 10 can accurately measure the film thickness, the evaporation rate of the evaporation source 101 is further accurately monitored, and the risk that the evaporation equipment is stopped due to inaccurate film thickness monitoring of the crystal oscillator plate 10 is avoided. Alternatively, the control component may be a Programmable Logic Controller (PLC) Controller.

In some embodiments, the film thickness detection apparatus 100 further includes a stage 40, the stage 40 is connected to the guide assembly 20, and the stage 40 includes a connection port 41, and the connection port 41 is used for accessing an external electrical signal. Optionally, the guide assembly 20 further includes a housing 32, the housing 32 is disposed on a side of the fixing member 21 away from the guide cylinder 22, the housing 32 includes a receiving portion 321 communicating with the receiving cavity 211, the receiving portion 321 is used for receiving a connection wire 52 connected to the crystal oscillator piece 10, and the connection wire 52 is connected to the connection port 41. Optionally, the film formation thickness detection apparatus 100 further includes a wave hose 51, the wave hose 51 is disposed between the housing 32 and the stage 40, and the connection line 52 is disposed inside the wave hose 51. With the above arrangement, data detected by the film formation thickness detection apparatus 100 can be output, and the stability of the film formation thickness detection apparatus 100 can be improved.

In summary, according to the film formation thickness detection apparatus 100 and the evaporation apparatus 1 of the embodiment of the present invention, the film formation thickness detection apparatus 100 includes the crystal oscillator plate 10 and the guide assembly 20, the guide assembly 20 includes the accommodating chamber 211 and the guide channel 221 communicating with the accommodating chamber 211, and the guide channel 221 has the introduction port 222 facing the evaporation source 101, so that the evaporation material M of the evaporation source 101 can reach the crystal oscillator plate 10 through the introduction port 222 to form a film under the guiding action of the guide channel 221. Since the evaporation direction of the evaporation material M of the evaporation source 101 is relatively divergent, the evaporation material M that reaches the wafer 10 can be guided by the guide channel 221. Further, by providing the introduction port 222, the guide passage 221 can be extended and contracted by moving between the wafer 10 and the vapor deposition source 101, and the guiding function of the evaporation material M can be adjusted more favorably. For example, by moving the introduction port 222 close to the vapor deposition source 101, the entire process from the approach of the evaporation material M to the deposition source 101 to the arrival at the crystal oscillator piece 10 can be guided by the guide channel 221, and the film formation density of the crystal oscillator piece 10 can be effectively improved, and the diffusion loss of the evaporation material M can be prevented, thereby improving the film formation efficiency of the crystal oscillator piece 10.

Further, the crystal oscillator piece 10 is arranged in the accommodating cavity 211, and the film thickness on the crystal oscillator piece 10 is obtained according to the detection of the piezoelectric effect and the mass load effect of the crystal oscillator piece 10. When the film thickness detection apparatus 100 is applied to the evaporation apparatus 1, the evaporation material M has poor adhesion to the crystal plate 10 or the evaporation material M is easily oxidized on the crystal plate 10, so that the crystal plate 10 needs to be pre-coated. The guide passage 221 can be extended and contracted between the vapor deposition source 101 and the crystal oscillator plate 10 by moving the introduction port 222 of the guide assembly 20, and when the introduction port 222 is moved close to the vapor deposition source 101, a large amount of the evaporation material MM can reach the crystal oscillator plate 10 by guiding, so that the pre-plating on the crystal oscillator plate 10 can be completed quickly and with high quality. After the pre-coating of the crystal oscillator plate 10 is completed, the introducing port 222 may be moved away from the evaporation source 101 by moving the introducing port 222, so that the evaporation material M of the evaporation source 101 is simultaneously evaporated on the substrate 104 to be evaporated and the crystal oscillator plate 10. Since the crystal oscillator plate 10 and the substrate 104 to be vapor-deposited are vapor-deposited simultaneously, the film thickness on the substrate 104 to be vapor-deposited can be further obtained by detecting the film thickness on the crystal oscillator plate 10.

Since the embodiment of the present invention further provides an evaporation apparatus 1, and the evaporation apparatus 1 includes the film thickness detection device 100 provided in any of the above embodiments, the same beneficial effects as those of the film thickness detection device 100 provided in any of the above embodiments are achieved, and no further description is given.

Referring to fig. 6, fig. 6 is a flowchart illustrating a method for detecting a film thickness according to an embodiment of the invention. An embodiment of the present invention further provides a film thickness detection method, which performs detection by using the film thickness detection apparatus 100, and the film thickness detection method includes:

and S110, starting the evaporation source to enable the evaporation source to generate evaporation materials.

And S120, pre-coating the film on the crystal oscillator plate, wherein the step of covering an introducing port on a vapor deposition source is included, and the evaporation material of the vapor deposition source reaches the crystal oscillator plate through the introducing port under the guidance of a guide channel to form the film.

S130, the introducing port is arranged far away from the evaporation source, and a preset distance is kept between the introducing port and the crystal oscillator piece.

And S140, simultaneously evaporating the device to be film-formed and the crystal oscillator plate after the pre-coating, and obtaining film-forming thickness information on the crystal oscillator plate according to the vibration frequency information of the crystal oscillator plate.

In some embodiments, the film-forming device is a substrate 104 to be evaporated. When the film thickness detection device 100 provided by the embodiment of the present invention is applied to the evaporation apparatus 1, the evaporation material M has poor adhesion to the crystal oscillator plate 10 or the evaporation material M is easily oxidized on the crystal oscillator plate 10, so that the crystal oscillator plate 10 needs to be pre-coated. The guide channel 221 can be extended and contracted between the evaporation source 101 and the crystal oscillator plate 10 by moving the introduction port 222 of the guide assembly 20, and when the introduction port 222 is moved to be close to the evaporation source 101, the pre-coating film on the crystal oscillator plate 10 can be quickly completed with high quality. After the pre-coating of the crystal oscillator plate 10 is completed, the introducing port 222 may be moved away from the evaporation source 101 by moving the introducing port 222, so that the evaporation material M of the evaporation source 101 is simultaneously evaporated on the substrate 104 to be evaporated and the crystal oscillator plate 10. Since the crystal oscillator plate 10 and the substrate 104 to be vapor-deposited are vapor-deposited simultaneously, the film thickness on the substrate 104 to be vapor-deposited can be further obtained by detecting the film thickness on the crystal oscillator plate 10.

In accordance with the above embodiments of the present invention, these embodiments are not intended to be exhaustive or to limit the invention to the precise embodiments disclosed. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best utilize the invention and various embodiments with various modifications as are suited to the particular use contemplated. The invention is limited only by the claims and their full scope and equivalents.