阅读说明：本技术 间接加热蒸镀源 (Indirect heating evaporation source ) 是由 菅原康司 上冈昌典 铃木康辅 高岛徹 谷口明 三泽启一 佐野纮晃 于 2020-03-05 设计创作，主要内容包括：本发明提供一种能够谋求容器的大容量化的间接加热蒸镀源。间接加热蒸镀源(1)具备：容器(内衬(2)),其形成为有底的筒状,且供蒸镀材料(4)填充；容器保持部(保持件(3)),其保持容器；电子源(8),其放出用于对容器进行电子冲击加热的热电子(电子束(25))；以及扫描线圈(21),其使自电子源放出的热电子的照射范围扩大。(The invention provides an indirect heating evaporation source which can increase the capacity of a container. An indirect heating vapor deposition source (1) is provided with: a container (liner (2)) which is formed in a bottomed cylindrical shape and is filled with a vapor deposition material (4); a container holding section (holder (3)) for holding a container; an electron source (8) that emits thermal electrons (electron beams (25)) for impact-heating electrons on the container; and a scanning coil (21) for expanding the irradiation range of the thermal electrons emitted from the electron source.)

1. An indirect heating evaporation source is characterized in that,

the indirect heating evaporation source comprises:

a container formed in a bottomed cylindrical shape and filled with a vapor deposition material;

a container holding portion that holds the container;

an electron source that emits thermal electrons for performing electron impact heating on the container; and

and a scanning coil for expanding an irradiation range of the thermal electrons emitted from the electron source.

2. The indirectly heated vapor deposition source of claim 1,

the indirect heating vapor deposition source includes an anode disposed between the container and the electron source, and the scanning coil is opposed to a side of the anode opposite to the container.

3. The indirectly heated evaporation source according to claim 1 or 2,

the distance from the bottom of the container to the scanning coil is longer than the distance from the bottom of the container to the electron source.

4. Indirectly heated evaporation source according to any of claims 1 to 3,

the indirect heating vapor deposition source includes a reflector facing a side surface of the container.

5. The indirectly heated evaporation source of claim 4,

the reflector has:

a cylindrical portion covering a side surface of the container; and

and a flange portion formed at one axial end of the cylindrical portion and engaged with the container holding portion.

6. Indirectly heated evaporation source according to any of claims 1 to 5,

the indirect heating evaporation source is provided with a current waveform control part for controlling the waveform of the current supplied to the scanning coil,

the current waveform control unit controls the current waveform so that an electron beam intensity at an outer edge portion of an irradiation range of the thermal electrons is larger than an electron beam intensity at a central portion of the irradiation range of the thermal electrons.

7. The indirectly heated evaporation source of claim 6,

the indirect heating vapor deposition source is provided with an operation part for changing the electron beam intensity of the central part and the electron beam intensity of the outer edge part in the irradiation range of the thermal electrons,

the current waveform control unit controls the current waveform of the scanning coil in accordance with an instruction using the operation unit.

Technical Field

The present invention relates to an indirect heating evaporation source that heats a container filled with an evaporation material by electron beam impact (bombardment) to thereby heat and evaporate the evaporation material.

Background

Conventionally, there has been known a vapor deposition apparatus in which a substrate is disposed in a vacuum chamber, a vapor deposition source is provided toward the substrate, and as an indirect heating vapor deposition source, there is an electron beam impact type vapor deposition source which emits an electron beam (thermal electron) into a container filled with a vapor deposition material (see, for example, patent document 1).

The indirect heating vapor deposition source described in patent document 1 includes a container, an electron source, a container holder, a moving mechanism, and a cooling stage. The electron source emits thermal electrons toward the bottom of the container. The container holding portion exposes a bottom portion of the container to hold the container. The moving mechanism drives the container holding portion to move the container in the horizontal direction. The cooling stage has an upper surface which comes into contact with the bottom of the container moved in the horizontal direction from above the electron source by the moving mechanism to cool the container.

Disclosure of Invention

Problems to be solved by the invention

In addition, in the indirect heating vapor deposition source as described in patent document 1, it is desired to increase the capacity of the container.

The present invention has been made in view of the above circumstances, and an object thereof is to provide an indirect heating vapor deposition source capable of increasing the capacity of a container.

Means for solving the problems

One embodiment of the indirectly heated vapor deposition source of the present invention includes a container, a container holder, an electron source, and a scanning coil. The container is formed in a bottomed cylindrical shape and filled with a vapor deposition material. The container holding portion holds the container. The electron source emits thermal electrons for electron impact heating of the container. The scanning coil expands the irradiation range of the thermal electrons emitted from the electron source.

ADVANTAGEOUS EFFECTS OF INVENTION

As described above, in the aspect of the present invention, since the scanning coil expands the irradiation range of the thermal electrons emitted from the electron source, the heating region of the container can be expanded, and the container can be increased in capacity.

Drawings

Fig. 1 is a schematic configuration diagram of an indirect heating vapor deposition source according to embodiment 1 of the present invention.

Fig. 2 is a schematic configuration diagram of an indirect heating vapor deposition source according to embodiment 2 of the present invention.

Fig. 3 is a schematic configuration diagram of an indirect heating vapor deposition source according to embodiment 3 of the present invention.

Fig. 4 is a diagram showing an example of a coil current waveform of the four-direction scanning mode of the scanning coil of the present invention.

Fig. 5 is a diagram showing an example of a coil current waveform of a circular scanning pattern of the scanning coil of the present invention.

Description of the reference numerals

1. 31, 41, indirectly heating the evaporation source; 2. a liner; 2a, a bottom; 2b, a peripheral wall portion; 2c, a flange portion; 3. a holder; 3a, a holding hole; 4. evaporating a material; 5. a reflector; 5a, a cylindrical portion; 5b, a flange portion; 7. a protective cover; 8. an electron source; 9. an acceleration power supply; 14. a rotary drive shaft; 15. a protective protrusion; 17. an upper surface plate; 17a, a through hole for evaporation; 18. a side panel; 21. a scanning coil; 22. a block; 23. a scanning coil current driving section; 24. an anode; 25. an electron beam; 26. a scanning coil current waveform control unit; 27. an operation section; 120. a substrate holding section; 121. a substrate; 122. the drive shaft is rotated.

Detailed Description

Hereinafter, an example of an embodiment for carrying out the present invention will be described with reference to the drawings. In the drawings, constituent elements having substantially the same function and configuration are denoted by the same reference numerals, and redundant description thereof is omitted.

< embodiment 1 >

[ Structure of Indirect heating vapor deposition Source ]

First, the structure of the indirect heating vapor deposition source according to embodiment 1 will be described with reference to fig. 1.

Fig. 1 is a schematic configuration diagram of an indirect heating vapor deposition source according to embodiment 1 of the present invention.

The indirectly heated vapor deposition source 1 shown in fig. 1 is provided in a vacuum chamber, and heats and evaporates a vapor deposition material filled in a container to deposit the vapor deposition material on a substrate.

The indirect heating vapor deposition source 1 includes a plurality of liners 2 representing a specific example of a container, a holder 3 representing a specific example of a container holder, a mask 7, and an electron source 8.

Each of the liners 2 is formed in a bottomed cylindrical shape, and has a circular bottom portion 2a, a peripheral wall portion 2b continuous with the periphery of the bottom portion 2a, and a flange portion 2c continuous with the upper end of the peripheral wall portion 2 b. The peripheral wall portion 2b is formed in a substantially cylindrical shape having a diameter that continuously increases from the bottom portion 2a toward the flange portion 2 c. Examples of the material of the liner 2 include high-melting-point materials such as molybdenum and ceramics. Further, the liner 2 is filled with the vapor deposition material 4.

The holder 3 is formed in a circular plate shape and has a plurality of holding holes 3a through which the plurality of liners 2 are inserted. The plurality of holding holes 3a are formed in a circular shape, and the flange portion 2c of the liner 2 abuts on the edge portion of the holding holes 3 a. The material of the holder 3 may be any material having a high thermal resistance. Thus, the heat of the liner 2 is difficult to be transferred to the holder 3.

In fig. 1, the holder 3 has two holding holes 3a, but the holder (container holding portion) of the present invention may have 1 holding hole for holding 1 liner (container) or 3 or more holding holes for holding 3 or more liners (containers).

A rotation drive shaft 14 representing a specific example of a drive mechanism is connected to the center of the holder 3. The rotation driving shaft 14 drives the holder 3 to rotate and moves the plurality of liners 2 held by the holder 3 in the horizontal direction. The rotary drive shaft 14 is cooled in such a way that the rotary function is not impaired.

Further, a protective projection 15 is provided on the upper surface of the holder 3. The protective protrusion 15 protrudes from the upper surface of the holder 3, and partitions a space surrounded by the later-described shield 7 and the holder 3 to block the liners 2 from each other.

The hood 7 is formed in a substantially box shape, and covers the holder 3 and the plurality of liners 2. The hood 7 has an upper surface plate 17 and a side plate 18 continuous with the upper surface plate 17. The upper surface plate 17 of the shield 7 has an evaporation through-hole 17a facing the substrate 121 held by the substrate holder 120. The evaporation particles generated by heating the vapor deposition material 4 pass through the evaporation through holes 17a of the mask 7 and reach the substrate 121.

A substrate holding portion 120 is disposed above the shield 7. The substrate holding portion 120 is formed in a circular plate shape, and holds a substrate 121 on a lower surface. A rotation drive shaft 122 is connected to the center of the upper surface of the substrate holding portion 120. The rotation driving shaft 122 drives the substrate holding portion 120 to rotate, and moves the substrate 121 held by the substrate holding portion 120 in the horizontal direction. In addition, the rotary drive shaft 122 is cooled in such a manner that the rotary function is not impaired.

When the vapor deposited film is attached to the substrate 121, the substrate holding unit 120 is driven to rotate by the rotation driving shaft 122, and the substrate 121 is moved to the upper side of the liner 2 (the evaporation through hole 17 a). As a result, when the vapor deposition material 4 filled in the liner 2 is heated and evaporated, the evaporated particles are deposited on the substrate 121. In fig. 1, the substrate holding unit 120 holds 1 substrate 121, but a plurality of substrates may be held by the substrate holding unit of the present invention.

The electron source 8 is disposed at an arbitrary deposition position on the rotation orbit of the liner 2 below the holder 3. Thus, when the liner 2 held by the holder 3 is disposed at the deposition position, the liner 2 is positioned above the electron source 8. The electron source 8 has a filament and a wiener electrode for forming an electric field distribution. The wiener electrode is formed with an opening portion that exposes the filament.

The filament is formed from a wire comprising a tungsten material. An acceleration power supply 9 is connected to the filament via a filament power supply. The acceleration power supply 9 is grounded, and a negative high voltage, for example, a voltage of 300V to 6kV is applied to the ground potential. The holder 3 is at ground potential, and the liner 2 held by the holder 3 is at ground potential.

A scanning coil (deflection coil) 21 is disposed in the vicinity of the electron source 8. The scanning coil 21 is housed in the cooled block 22. A scanning coil current driving unit 23 is connected to the scanning coil 21. The scanning coil current driving unit 23 controls the output of the current to the scanning coil 21.

An anode 24 having an opening is fixed to the lower surface of the block 22. The anode 24 is disposed between the bottom 2a of the liner 2 and the electron source 8, and an opening of the anode 24 faces the electron source 8 with a predetermined distance therebetween. The anode 24 is made of a high melting point material because it strongly receives a thermal load caused by radiant heat and reflected electrons from the liner 2. The scanning coil 21 is opposed to the side of the anode 24 opposite to the liner 2. The scanning coil 21 generates an alternating magnetic field by the flow of current.

When a predetermined current is supplied to the filament, the filament is heated by joule heating to a temperature at which thermal electrons can be supplied, for example, about 2300 ℃. When a negative high voltage is applied to the ground potential by the acceleration power supply 9, thermal electrons emitted from the filament are accelerated by an electric field between the electron source 8 and the anode 24 to generate an electron beam 25. The electron beam 25 is deflected by an ac magnetic field generated by the scanning coil 21, and the irradiation range is expanded. As a result, the capacity of the liner 2 can be increased.

In addition, the irradiation range of the electron beam 25 is expanded, and the current density of the electron beam 25 is reduced. This can increase the output of the electron beam 25 limited to prevent damage to the liner 2, and increase the deposition rate.

When the bottom portion 2a of the liner 2 is subjected to electron impact heating by the electron beam 25, the liner 2 is heated. Then, by conductive heat and radiation from the liner 2, the evaporation material 4 is heated. When the electron impact heating is continued to some extent to the bottom portion 2a of the liner 2, the evaporation material 4 is sublimated or evaporated. The evaporation particles of the vapor deposition material 4 pass through the evaporation through holes 17a of the mask 7 and travel toward the substrate 121 held by the substrate holding portion 120. As a result, the evaporated particles of the evaporation material 4 are deposited on the substrate 121, and a vapor deposition film having a desired thickness is deposited on the substrate 121.

In addition, the irradiation range of the electron beam 25 is expanded, so that a part of the electron beam 25 reaches the edge of the holding hole 3a of the holder 3. This causes the edge of the holding hole 3a, which is the portion of the liner 2 against which the flange 2c abuts, to be heated by the electron impact, thereby suppressing cooling near the flange 2c of the liner 2. As a result, deposition of evaporated particles of the vapor deposition material 4 on the upper end of the peripheral wall 2b can be prevented or suppressed.

< embodiment 2 >

[ Structure of Indirect heating vapor deposition Source ]

Next, the structure of the indirect heating vapor deposition source according to embodiment 2 will be described with reference to fig. 2.

Fig. 2 is a schematic configuration diagram of an indirect heating vapor deposition source according to embodiment 2 of the present invention.

The indirect-heating vapor deposition source 31 according to embodiment 2 has the same configuration as the indirect-heating vapor deposition source 1 according to embodiment 1 (see fig. 1), and is different in the position of the block 22 in which the scanning coil 21 is housed. Therefore, the position of the block 22 will be described here, and the description of the same configuration as that of the indirect heating vapor deposition source 1 (see fig. 1) according to embodiment 1 will be omitted.

As shown in fig. 2, the indirect heating vapor deposition source 31 includes a plurality of liners 2, a holder 3, a shield 7, and an electron source 8. A scanning coil (deflection coil) 21 is disposed in the vicinity of the electron source 8. The scanning coil 21 is housed in a cooled block 22.

An anode 24 having an opening is fixed to the upper surface of the block 22. The anode 24 is disposed between the bottom 2a of the liner 2 and the electron source 8, and an opening of the anode 24 faces the electron source 8 with a predetermined distance therebetween. The scanning coil 21 is opposed to the anode 24 on the side opposite to the liner 2. The scanning coil 21 is disposed on the side of the electron source 8, and the distance from the bottom 2a of the liner 2 to the scanning coil 21 is longer than the distance from the bottom 2a of the liner 2 to the electron source 8.

In the indirectly heated vapor deposition source 31 according to embodiment 2, as in the indirectly heated vapor deposition source 1 according to embodiment 1, the electron beam 25 is also deflected by the ac magnetic field generated by the scanning coil 21. As a result, the irradiation range of the electron beam 25 is expanded, and the capacity of the liner 2 can be increased.

Further, the output of the electron beam 25 restricted to prevent damage to the liner 2 can be increased, and the deposition rate can be increased. Further, since a part of the electron beam 25 reaches the edge of the holding hole 3a of the holder 3, cooling near the flange portion 2c of the liner 2 can be suppressed. As a result, deposition of evaporated particles of the vapor deposition material 4 on the upper end of the peripheral wall 2b can be prevented or suppressed.

In the indirect-heating vapor deposition source 31 according to embodiment 2, the scanning coil 21 faces the anode 24 on the side opposite to the side facing the liner 2, and the scanning coil 21 (block 22) is disposed at an appropriate distance from the liner 2. The distance from the bottom 2a of the liner 2 to the scanning coil 21 is longer than the distance from the bottom 2a of the liner 2 to the electron source 8, and the scanning coil 21 (block 22) is disposed at an appropriate distance from the liner 2. Accordingly, the scanning coil 21 is less likely to be subjected to a thermal load due to radiant heat from the bottom portion 2a of the liner 2, reflected electrons reflected by the bottom portion 2a, and radiant heat from the filament of the electron source 8, and damage to the scanning coil 21 due to heat can be prevented or suppressed.

Further, it is not necessary to enlarge the diameter of the scanning coil 21 by separating the scanning coil 21 from the bottom portion 2a of the liner 2 or the like. If the diameter of the scanning coil 21 is increased, the current is increased to generate an ac magnetic field having a strength to deflect the electron beam 25, and power consumption is increased. Further, it is possible to prevent or suppress the size of the entire vapor deposition source from being increased by increasing the diameter of the scanning coil 21.

< embodiment 3 >

[ Structure of Indirect heating vapor deposition Source ]

Next, the structure of the indirect heating vapor deposition source according to embodiment 3 will be described with reference to fig. 3.

Fig. 3 is a schematic configuration diagram of an indirect heating vapor deposition source according to embodiment 3 of the present invention.

The indirect-heating vapor deposition source 41 according to embodiment 3 has the same configuration as the indirect-heating vapor deposition source 1 (see fig. 1) according to embodiment 1, and is different in that the indirect-heating vapor deposition source 41 includes a plurality of reflectors 5. Therefore, the reflector 5 of the indirect heating vapor deposition source 41 will be described here, and the description of the same structure as that of the indirect heating vapor deposition source 1 (see fig. 1) of embodiment 1 will be omitted.

As shown in fig. 3, the indirect heating vapor deposition source 41 includes a plurality of liners 2, a holder 3, a plurality of reflectors 5, a shield 7, and an electron source 8. Each of the plurality of reflectors 5 has a cylindrical tubular portion 5a and a flange portion 5b formed at one end of the tubular portion 5a in the axial direction. Examples of the material of the reflector 5 include high melting point materials such as molybdenum and ceramics.

The inner diameter of the cylindrical portion 5a is set larger than the maximum outer diameter of the peripheral wall portion 2b of the liner 2, and the cylindrical portion 5a covers the peripheral wall portion 2b (side surface) of the liner 2. The outer diameter of the cylindrical portion 5a is slightly smaller than the diameter of the holding hole 3a of the holder 3. The flange portion 5b engages (abuts) an edge portion of the holding hole 3a of the holder 3, and the cylindrical portion 5a penetrates the holding hole 3 a.

Further, the flange portion 2c of the liner 2 abuts against the flange portion 5 b. That is, the liner 2 is held by the holder 3 via the reflector 5. The height position of the bottom portion 2a of the liner 2 is substantially the same as the height position of the other end of the cylindrical portion 5a of the reflector 5 in the axial direction. The cylindrical portion 5a of the reflector 5 reflects the electron beam 25 toward the liner 2.

In embodiment 3, as in embodiment 1, thermal electrons emitted from the filament are also accelerated by the electric field between the electron source 8 and the anode 24 to generate an electron beam 25. The electron beam 25 is deflected by an ac magnetic field generated by the scanning coil 21, and the irradiation range is expanded.

As a result, the electron beam 25 is irradiated to a range larger than the bottom portion 2a of the liner 2, and a part of the electron beam 25 is reflected by the cylindrical portion 5a of the reflector 5 and irradiated to the peripheral wall portion 2b of the liner 2. Thus, the bottom portion 2a and the peripheral wall portion 2b of the liner 2 are heated by electron impact.

When the bottom portion 2a and the peripheral wall portion 2b are heated by electron impact, the liner 2 is heated by radiation of the reflector 5. Then, by conductive heat and radiation from the liner 2, the evaporation material 4 is heated. When the electron impact heating is continued to some extent to the bottom portion 2a of the liner 2, the evaporation material 4 is sublimated or evaporated. The evaporation particles of the vapor deposition material 4 pass through the evaporation through holes 17a of the mask 7 and travel toward the substrate 121 held by the substrate holding portion 120. As a result, the evaporated particles of the evaporation material 4 are deposited on the substrate 121, and a vapor deposition film having a desired thickness is deposited on the substrate 121.

As described above, in the present embodiment, since the reflector 5 is provided, the electron beam 25 reflected by the liner 2 and the radiation of the liner 2, which are one cause of energy loss, can be reflected and utilized as the heat to the liner 2. As a result, the heating efficiency of the liner 2 can be improved. In addition, since the reflector 5 reflects the electron beam 25 dissipated from the liner 2 toward the liner 2, the heating efficiency of the liner 2 can be improved.

In the indirect-heating vapor deposition source 41 according to embodiment 3, as in the indirect-heating vapor deposition source 1 according to embodiment 1, the electron beam 25 is also deflected by the ac magnetic field generated by the scanning coil 21. As a result, the irradiation range of the electron beam 25 is expanded, and the capacity of the liner 2 can be increased. Further, the output of the electron beam 25 restricted to prevent damage to the liner 2 can be increased, and the deposition rate can be increased.

The scanning coil current drive unit 23 is connected to a scanning coil current waveform control unit 26. The scanning coil current waveform control unit 26 controls the waveform of the current supplied to the scanning coil 21 (hereinafter referred to as "current waveform"). That is, the scanning coil current waveform control unit 26 controls the scanning coil current drive unit 23 to adjust the current waveform.

Further, an operation unit 27 is connected to the scanning coil current waveform control unit 26. The operation unit 27 receives inputs for changing the electron beam intensity at the central portion and the electron beam intensity at the peripheral portion (outer edge portion) in the irradiation range of the electron beam 25. The scanning coil current waveform control unit 26 adjusts the current waveform in accordance with an instruction input using the operation unit 27. Examples of the instruction input using the operation unit 27 include a selection of a scanning mode and a ratio of an electron beam intensity at the central portion to an electron beam intensity at the peripheral portion in an irradiation range of the electron beam 25.

Fig. 4 is a diagram showing an example of a coil current waveform of the four-direction scanning mode of the scanning coil. In the coil current waveform of the square scanning mode shown in fig. 4, the electron beam intensity at the outer edge portion is increased relative to the electron beam intensity at the central portion, and the brighter the display, the stronger the electron beam intensity.

Fig. 5 is a diagram showing an example of a coil current waveform of a circular scanning pattern of the scanning coil. In the coil current waveform of the circular scan pattern shown in fig. 5, the intensity of the electron beam gradually increases from the center portion toward the peripheral portion, and the brighter the display, the stronger the intensity of the electron beam.

In embodiment 3, for example, the four-direction scanning mode is selected by the operation unit 27, and the instruction is given so that the electron beam intensity at the outer edge portion is stronger than the electron beam intensity at the central portion. Thus, in the square scan mode, the scan coil current waveform control unit 26 corrects the coil current waveform so as to increase the electron beam intensity at the outer edge portion of the irradiation range of the electron beam 25 (see fig. 4), and outputs the corrected waveform by the scan coil current drive unit 23.

The electron beam 25 at the outer edge portion in the irradiation range is reflected by the reflector 5 and irradiated to the peripheral wall portion 2b of the liner 2. This allows the peripheral wall portion 2b of the liner 2 to be heated by electron impact heating, similarly to the bottom portion 2a of the liner 2. As a result, when the temperature of the liner 2 is raised, the uniformity of the temperature distribution of the bottom portion 2a and the peripheral wall portion 2b can be improved, and the evaporation residue of the vapor deposition material 4 on the inner wall surface of the liner 2 can be prevented or suppressed (japanese patent No.: solution け residue り).

In embodiment 3, for example, the circular scanning mode is selected by the operation unit 27, and the intensity of the electron beam is instructed to be gradually increased from the central portion toward the peripheral portion. Thus, in the circular scanning mode, the scanning coil current waveform control unit 26 corrects the coil current waveform so that the electron beam intensity increases from the center portion toward the peripheral portion (see fig. 5), and outputs the corrected waveform by the scanning coil current drive unit 23.

The electron beam 25 at the peripheral edge portion in the irradiation range is reflected by the reflector 5 and irradiated to the peripheral wall portion 2b of the liner 2. This allows the peripheral wall portion 2b of the liner 2 to be heated by electron impact heating, similarly to the bottom portion 2a of the liner 2. As a result, when the temperature of the liner 2 is raised, uniformity of the temperature distribution of the bottom portion 2a and the peripheral wall portion 2b can be improved, and the evaporation residue of the vapor deposition material 4 on the inner wall surface of the liner 2 can be prevented or suppressed.

Then, by selecting the circular scanning mode, the irradiation range of the electron beam 25 becomes circular. Therefore, the inner liner 2 having an axially symmetric shape can be efficiently irradiated with the electron beam 25, and energy loss due to the electron beam 25 escaping from the inner liner 2 can be reduced.

< summary >

As described above, the indirect heating vapor deposition source according to embodiments 1 to 3 includes: a container (liner 2) formed in a bottomed cylindrical shape and filled with a vapor deposition material (vapor deposition material 4); a container holding portion (holder 3) for holding a container; an electron source (electron source 8) that emits thermal electrons (electron beams 25) for impact-heating the container with electrons; and a scanning coil (scanning coil 21) for expanding the irradiation range of the thermal electrons emitted from the electron source.

Thus, the thermal electrons are deflected by the alternating magnetic field generated by the scanning coil, and the irradiation range of the thermal electrons is expanded, so that the container can have a larger capacity. Further, the output of thermal electrons restricted to prevent damage to the container can be increased, and the deposition rate can be increased.

The scanning coil (scanning coil 21) of the indirect heating vapor deposition source according to embodiment 2 is opposed to the anode (anode 24) on the side opposite to the container (liner 2). This enables the scanning coil to be spaced apart from the bottom of the container by an appropriate distance. As a result, the scanning coil is less likely to be subjected to a thermal load due to radiant heat from the container, reflected electrons reflected by the container, and radiant heat from the electron source (electron source 8), and damage to the scanning coil due to heat can be prevented or suppressed.

Further, the distance from the bottom (bottom 2a) of the container (liner 2) of the indirect heating vapor deposition source according to embodiment 2 to the scanning coil (scanning coil 21) is longer than the distance from the bottom of the container to the electron source (electron source 8). This enables the scanning coil to be spaced apart from the bottom of the container by an appropriate distance. As a result, the scanning coil is less likely to be subjected to a thermal load due to radiant heat from the container, reflected electrons reflected by the container, and radiant heat from the electron source (electron source 8), and damage to the scanning coil due to heat can be prevented or suppressed.

The indirect heating vapor deposition source according to embodiment 3 includes a reflector (reflector 5) facing the side surface of the container (liner 2). As a result, thermal electrons (electron beams 25) reflected by the container, which is one cause of energy loss, and radiation from the container can be reflected and utilized as heat to the container. As a result, the heating efficiency of the container can be improved.

The reflector (reflector 5) of the indirect heating vapor deposition source according to embodiment 3 described above includes: a cylindrical portion (cylindrical portion 5a) that covers a side surface (peripheral wall portion 2b) of the container (liner 2); and a flange portion (flange portion 5b) formed at one axial end of the cylindrical portion and engaged with the container holding portion (holder 3). This reduces the number of thermal electrons (electron beams 25) that do not reach the container, thereby improving energy loss. Further, the reflector can be easily disposed on the side of the container by engaging the flange portion with the container holding portion.

The current waveform control unit (scanning coil current waveform control unit 26) of the indirect heating vapor deposition source according to embodiment 3 controls the current waveform so that the electron beam intensity at the outer edge portion (peripheral edge portion) in the irradiation range of the thermal electrons (electron beams 25) is greater than the electron beam intensity at the central portion (central portion) in the irradiation range of the thermal electrons. This improves the uniformity of the temperature distribution of the bottom (bottom 2a) and the peripheral wall (peripheral wall 2b) of the container when the temperature of the container (liner 2) rises, and prevents or suppresses the evaporation and residue of the vapor deposition material (vapor deposition material 4) on the inner wall surface of the container.

The indirect heating vapor deposition source according to embodiment 3 described above includes an operation unit (operation unit 27) for changing the electron beam intensity at the center and the electron beam intensity at the outer edge in the irradiation range of the thermal electrons (electron beams 25), and the current waveform control unit (scanning coil current waveform control unit 26) controls the current waveform of the scanning coil (scanning coil 21) in accordance with an instruction using the operation unit. This makes it possible to change the electron beam intensity at a desired portion in the irradiation range of the thermal electrons, and to set the intensity of the electron beam according to the shape of the container (liner 2).

< modification example >

The embodiments of the present invention have been described above. However, the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the scope of the invention described in the claims. For example, the above embodiments have been described to facilitate understanding of the present invention, and the present invention is not limited to having all of the configurations described. Further, a part of the structure of one embodiment may be replaced with the structure of another embodiment, and the structure of another embodiment may be added to the structure of one embodiment. Further, it is also possible to add, delete, or replace a part of the configuration of each embodiment with another configuration.

For example, embodiment 3 described above employs a configuration in which the reflector 5 is provided in embodiment 1. However, as the indirect heating vapor deposition source of the present invention, the reflector 5 may be provided in embodiment 2. In this case, the effect of embodiment 2, in which damage to the scanning coil is prevented or suppressed, and the effect of embodiment 3, in which the heating efficiency of the container can be improved, can be obtained.

In addition, the scanning coil current waveform control unit 26 and the operation unit 27 of embodiment 3 may be provided in the above-described embodiments 1 and 2. In embodiments 1 and 2 not including the reflector 5, the electron beam intensity at the peripheral portion (outer edge portion) of the irradiation range of the electron beam 25 may be set to be larger than the electron beam intensity at the central portion (central portion) of the irradiation range of the electron beam 25. In this case, since the electron beam intensity of the electron beam 25 irradiated to the peripheral wall portion 2b of the liner 2 is also increased, the temperature difference between the bottom portion 2a to which the electron beam 25 is easily irradiated and the peripheral wall portion 2b to which the electron beam 25 is hardly irradiated can be reduced. Further, the generation of the evaporation residue of the vapor deposition material 4 on the inner wall surface of the liner 2 can be suppressed.

In embodiment 3, the height position of the bottom portion 2a of the liner 2 is substantially the same as the height position of the other end of the cylindrical portion 5a of the reflector 5 in the axial direction. However, the height position of the other end of the cylindrical portion 5a of the reflector 5 in the axial direction may be lower than the height position of the bottom portion 2a of the liner 2. This allows more electron beams 25 to be reflected by the reflector 5, thereby improving the heating efficiency of the liner 2.

In addition, in the above-described embodiments 1 to 3, the rotary drive shaft 14 is applied as the moving mechanism. However, the moving mechanism of the present invention is not limited to a mechanism for rotating the holder 3, and may be any mechanism for moving the holder and the liner. As the moving mechanism of the present invention, for example, a linear moving mechanism that linearly moves the holder and the liner may be employed. In this case, the electron source is disposed at an arbitrary position on the track of the liner below the holder.