阅读说明：本技术 一种溅镀机及其溅镀工艺 (Sputtering machine and sputtering process thereof ) 是由 林行 葛健国 吕育仁 范小荣 朱育民 庄胜智 于 2018-08-10 设计创作，主要内容包括：一种溅镀机及其溅镀工艺,它涉及溅镀设备及其溅镀工艺技术领域。它包含外壳、真空腔体、升降控制器、升降杆、真空溅镀室、移动块、溅镀枪、载台、固定板；壳体内部为真空腔体,升降控制器设置在壳体内部的上表面,升降控制器下表面设置有升降杆,升降杆的下端连接于真空溅镀室上表面；移动块设置在真空溅镀室的下表面,溅镀枪设置在移动块的下方；壳体内部底面设置有固定的载台,载台上表面设置固定板。采用上述技术方案后,本发明有益效果为：它的结构简单,具有较高的溅镀性能,需要进行内部检查与维修时不需要将整体进行拆卸,省时省力,避免设备组件安装松动,且溅镀机构可灵活移动,提高溅镀的均匀程度和溅镀质量。(A sputtering machine and a sputtering process thereof relate to the technical field of sputtering equipment and the sputtering process thereof. The device comprises a shell, a vacuum cavity, a lifting controller, a lifting rod, a vacuum sputtering chamber, a moving block, a sputtering gun, a carrying platform and a fixing plate; the inside of the shell is a vacuum cavity, the lifting controller is arranged on the upper surface of the inside of the shell, the lower surface of the lifting controller is provided with a lifting rod, and the lower end of the lifting rod is connected to the upper surface of the vacuum sputtering chamber; the moving block is arranged on the lower surface of the vacuum sputtering chamber, and the sputtering gun is arranged below the moving block; the bottom surface of the inside of the shell is provided with a fixed carrying platform, and the upper surface of the carrying platform is provided with a fixed plate. After the technical scheme is adopted, the invention has the beneficial effects that: its simple structure has higher sputtering performance, need not dismantle whole when needing to carry out inside inspection and maintenance, labour saving and time saving avoids equipment unit to install not hard up, and the sputtering mechanism can move in a flexible way, improves the even degree and the sputtering quality of sputtering.)

1. A sputtering machine is characterized in that: the device comprises a shell (1), a vacuum cavity (2), a lifting controller (3), a lifting rod (4), a vacuum sputtering chamber (5), a moving block (6), a sputtering gun (7), a carrying platform (8) and a fixing plate (9); the vacuum sputtering chamber is characterized in that a vacuum cavity (2) is arranged in the shell (1), the lifting controller (3) is arranged on the upper surface in the shell (1), the lower surface of the lifting controller (3) is provided with a lifting rod (4), and the lower end of the lifting rod (4) is connected to the upper surface of the vacuum sputtering chamber (5); the moving block (6) is arranged on the lower surface of the vacuum sputtering chamber (5), and the sputtering gun (7) is arranged below the moving block (6); a fixed carrier (8) is arranged on the bottom surface inside the shell (1), and a fixed plate (9) is arranged on the upper surface of the carrier (8).

2. The sputtering process of the sputtering machine is characterized by comprising the following steps: firstly, a workpiece for replacing sputtering is placed on a fixing plate; secondly, filling inert gas into the vacuum sputtering chamber, and applying high-voltage direct current to the magnetic element to enable the inert gas to release plasma; thirdly, the plasma bombs out the atoms contained in the metal target material and falls on the workpiece to be sputtered to form a film; and fourthly, controlling the sputtering gun to uniformly sputter the workpiece, and improving the flatness of the sputtered film.

3. The sputtering machine as claimed in claim 1, wherein: the outer front surface of the shell (1) is provided with a visible window (11), and an access hole (12) is arranged below the visible window (11).

4. The sputtering machine as claimed in claim 1, wherein: the vacuum sputtering chamber (5) is internally provided with a magnetic element (51) and a target (52).

5. The sputtering machine as claimed in claim 1, wherein: the bottom surface of the vacuum sputtering chamber (5) is provided with a slide rail (53).

6. The sputtering machine as claimed in claim 1, wherein: the left end and the right end of the upper surface of the carrying platform (8) are provided with baffle plates (81).

Technical Field

The invention relates to the technical field of sputtering equipment and a sputtering process thereof, in particular to a sputtering machine and a sputtering process thereof.

Background

The sputtering technique is characterized in that under a vacuum environment, appropriate inert gas is introduced as a medium, the inert gas is accelerated to impact a target, so that atoms on the surface of the target are impacted, and a coating film is formed on the surface.

Sputtering, commonly referred to as magnetron sputtering, is a high-speed, low-temperature sputtering process. The process requires that the vacuum degree is about 1 x 10 < -3 > Torr, namely, inert gas argon (Ar) is filled in the vacuum state of 1.3 x 10 < -3 > Pa, high-voltage direct current is added between a plastic substrate (anode) and a metal target (cathode), electrons generated by glow discharge (glow discharge) excite the inert gas to generate plasma, and the plasma bombs out atoms of the metal target to be deposited on the plastic substrate. The principle is as follows: charged particles with kinetic energy of tens of electron volts or higher bombard the surface of the material, so that the charged particles are sputtered into a gas phase and can be used for etching and coating. The number of atoms sputtered by one incident ion is referred to as sputtering Yield (Yield), and the higher the Yield, the higher the sputtering rate, the highest the amount of Cu, Au, Ag, etc., and the lowest the amount of Ti, Mo, Ta, W, etc. Typically between 0.1 and 10 atoms/ion. The ions can be generated by direct current glow discharge (glowswitch), and under the vacuum degree of 10 < -1 > -10 Pa, high voltage is applied between the two electrodes to generate discharge, and the positive ions bombard the negative target material to sputter the target material and plate the target material on the plated object. The current density of the normal glow discharge (glow discharge) is related to the cathode material and shape, the gas species pressure, and the like. It should be kept as stable as possible during sputtering. Any material can be sputtered, even high melting point materials are easy to sputter, but Radio Frequency (RF) or pulse (pulse) sputtering is required for non-conductor targets; and the sputtering power and speed are lower due to the poor conductivity. The metal sputtering power can reach 10W/cm2, and the nonmetal is <5W/cm 2. Two-pole sputtering: the target material is a cathode, the workpiece to be plated and the workpiece holder are anodes, and the plating rate can be higher at a gas (argon Ar) pressure of about several Pa or higher. Magnetron sputtering: an orthogonal electromagnetic field is formed on the surface of the cathode target, the electron density in the area is high, and further the ion density is improved, so that the sputtering rate is improved (by one order of magnitude), the sputtering speed can reach 0.1-1 um/min, the film adhesion is better than that of evaporation, and the method is one of the most practical coating technologies at present. Other coating techniques include bias sputtering, reactive sputtering, ion beam sputtering, and the like.

Most of the existing sputtering machines for sputtering processing technology are devices with complex structures, and the devices need to be disassembled integrally when needing to be overhauled, so that time and labor are wasted, equipment can be loosened, and the working quality is affected; moreover, most sputtering mechanisms are fixed structures, which may cause uneven sputtering of the workpiece to be sputtered and affect the sputtering quality.

Disclosure of Invention

The invention aims to provide a sputtering machine and a sputtering process thereof aiming at the defects and shortcomings of the prior art, the sputtering machine is simple in structure, has higher sputtering performance, does not need to be disassembled integrally when internal inspection and maintenance are needed, saves time and labor, avoids equipment components from being installed and loosened, can flexibly move a sputtering mechanism, and improves the sputtering uniformity and sputtering quality.

In order to achieve the purpose, the technical scheme of the invention is as follows: the device comprises a shell 1, a vacuum cavity 2, a lifting controller 3, a lifting rod 4, a vacuum sputtering chamber 5, a moving block 6, a sputtering gun 7, a carrying platform 8 and a fixing plate 9; the inside of the shell 1 is a vacuum cavity 2, the lifting controller 3 is arranged on the upper surface of the inside of the shell 1, the lower surface of the lifting controller 3 is provided with a lifting rod 4, and the lower end of the lifting rod 4 is connected to the upper surface of the vacuum sputtering chamber 5; the moving block 6 is arranged on the lower surface of the vacuum sputtering chamber 5, and the sputtering gun 7 is arranged below the moving block 6; a fixed carrying platform 8 is arranged on the bottom surface inside the shell 1, and a fixed plate 9 is arranged on the upper surface of the carrying platform 8. The fixing plate 9 can be used for placing a workpiece to be sputtered and fixing the workpiece to ensure uniform sputtering.

The front surface of the outer part of the shell 1 is provided with a visible window 11, and an access hole 12 is arranged below the visible window 11. The visual window 11 can be used for the operating personnel to observe the working state of the inside of the sputtering machine in real time, and when the abnormal working state of the inside of the sputtering machine is observed, the access hole 12 can be opened for fault detection and maintenance.

The magnetic element 51 and the target 52 are arranged in the vacuum sputtering chamber 5. After an inert gas is filled into the vacuum sputtering chamber 5, atoms of the target 52 are ejected by the magnetic element 51.

The bottom surface of the vacuum sputtering chamber 5 is provided with a slide rail 53. The moving block 6 can move left and right in the slide rail 53 to achieve the effect of moving the sputtering gun 7 left and right.

The left end and the right end of the upper surface of the carrier 8 are provided with baffle plates 81. The baffle 81 can be used to reduce the loss of atoms released from the target 52 during sputtering and improve sputtering efficiency.

A sputtering process flow of a sputtering machine comprises the following steps: firstly, a workpiece for replacing sputtering is placed on a fixing plate; secondly, filling inert gas into the vacuum sputtering chamber, and applying high-voltage direct current to the magnetic element to enable the inert gas to release plasma; thirdly, the plasma bombs out the atoms contained in the metal target material and falls on the workpiece to be sputtered to form a film; and fourthly, controlling the sputtering gun to uniformly sputter the workpiece, and ensuring that the sputtered film has higher flatness.

The working principle of the invention is as follows: the lifting controller controls the vacuum monitoring chamber to move up and down through the lifting rod, the sputtering distance between the lifting controller and the workpiece is adjusted, the sputtering gun is controlled to uniformly sputter the workpiece, the baffle is arranged to reduce the loss of atoms released by the target, and the processing cost is reduced.

After the technical scheme is adopted, the invention has the beneficial effects that: its simple structure has higher sputtering performance, need not dismantle whole when needing to carry out inside inspection and maintenance, labour saving and time saving avoids equipment unit to install not hard up, and the sputtering mechanism can move in a flexible way, improves the even degree and the sputtering quality of sputtering.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments are briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

FIG. 1 is a schematic structural view of the present invention;

fig. 2 is an external structural view of the casing 1 according to the present invention;

FIG. 3 is a schematic bottom view of the vacuum sputtering chamber 5 of the present invention.

Description of reference numerals: the device comprises a shell 1, a vacuum cavity 2, a lifting controller 3, a lifting rod 4, a vacuum sputtering chamber 5, a moving block 6, a sputtering gun 7, a carrying platform 8, a fixing plate 9, a visible window 11, an access hole 12, a magnetic element 51, a target 52, a sliding rail 53 and a baffle plate 81.

Detailed Description

Referring to fig. 1 to fig. 3, the technical solution adopted by the present embodiment is: the device comprises a shell 1, a vacuum cavity 2, a lifting controller 3, a lifting rod 4, a vacuum sputtering chamber 5, a moving block 6, a sputtering gun 7, a carrying platform 8 and a fixing plate 9; the inside of the shell 1 is a vacuum cavity 2, the lifting controller 3 is arranged on the upper surface of the inside of the shell 1, the lower surface of the lifting controller 3 is provided with a lifting rod 4, and the lower end of the lifting rod 4 is connected to the upper surface of the vacuum sputtering chamber 5; the moving block 6 is arranged on the lower surface of the vacuum sputtering chamber 5, and the sputtering gun 7 is arranged below the moving block 6; a fixed carrying platform 8 is arranged on the bottom surface inside the shell 1, and a fixed plate 9 is arranged on the upper surface of the carrying platform 8. The fixing plate 9 can be used for placing a workpiece to be sputtered and fixing the workpiece to ensure uniform sputtering.

The front surface of the outer part of the shell 1 is provided with a visible window 11, and an access hole 12 is arranged below the visible window 11. The visual window 11 can be used for the operating personnel to observe the working state of the inside of the sputtering machine in real time, and when the abnormal working state of the inside of the sputtering machine is observed, the access hole 12 can be opened for fault detection and maintenance.

The magnetic element 51 and the target 52 are arranged in the vacuum sputtering chamber 5. After an inert gas is filled into the vacuum sputtering chamber 5, atoms of the target 52 are ejected by the magnetic element 51.

The bottom surface of the vacuum sputtering chamber 5 is provided with a slide rail 53. The moving block 6 can move left and right in the slide rail 53 to achieve the effect of moving the sputtering gun 7 left and right.

The left end and the right end of the upper surface of the carrier 8 are provided with baffle plates 81. The baffle 81 can be used to reduce the loss of atoms released from the target 52 during sputtering and improve sputtering efficiency.

A sputtering process flow of a sputtering machine comprises the following steps: firstly, a workpiece for replacing sputtering is placed on a fixing plate; secondly, filling inert gas into the vacuum sputtering chamber, and applying high-voltage direct current to the magnetic element to enable the inert gas to release plasma; thirdly, the plasma bombs out the atoms contained in the metal target material and falls on the workpiece to be sputtered to form a film; and fourthly, controlling the sputtering gun to uniformly sputter the workpiece, and ensuring that the sputtered film has higher flatness.

The working principle of the invention is as follows: the lifting controller controls the vacuum monitoring chamber to move up and down through the lifting rod, the sputtering distance between the lifting controller and the workpiece is adjusted, the sputtering gun is controlled to uniformly sputter the workpiece, the baffle is arranged to reduce the loss of atoms released by the target, and the processing cost is reduced.

After the technical scheme is adopted, the invention has the beneficial effects that: its simple structure has higher sputtering performance, need not dismantle whole when needing to carry out inside inspection and maintenance, labour saving and time saving avoids equipment unit to install not hard up, and the sputtering mechanism can move in a flexible way, improves the even degree and the sputtering quality of sputtering.

The above description is only for the purpose of illustrating the technical solutions of the present invention and not for the purpose of limiting the same, and other modifications or equivalent substitutions made by those skilled in the art to the technical solutions of the present invention should be covered within the scope of the claims of the present invention without departing from the spirit and scope of the technical solutions of the present invention.