阅读说明：本技术 一种碳掺杂相变存储材料靶材及其制备方法 (Carbon-doped phase-change storage material target and preparation method thereof ) 是由 宋志棠 宋三年 于 2019-11-07 设计创作，主要内容包括：本申请提供一种碳掺杂相变存储材料靶材及其制备方法,该靶材的制备方法包括以下步骤：获取相变原材料；将相变原材料按照化学计量比混合获得第一混合物,将第一混合物在设定温度下加热反应生成相变材料化合物；将相变材料化合物采用高能球磨或者气流磨的方法制成相变材料粉体；将相变材料粉体与石墨烯均匀混合制成第二混合物；将第二混合物通过真空热压烧结工艺制得靶材。如此,采用本申请提供的制备方法制备的靶材组份均一、靶材表面平整、粗糙度小、含氧量低。(The application provides a carbon-doped phase-change storage material target and a preparation method thereof, wherein the preparation method of the target comprises the following steps: obtaining a phase-change raw material; mixing phase-change raw materials according to a stoichiometric ratio to obtain a first mixture, and heating and reacting the first mixture at a set temperature to generate a phase-change material compound; preparing a phase-change material compound into phase-change material powder by adopting a high-energy ball milling or jet milling method; uniformly mixing the phase-change material powder with graphene to prepare a second mixture; and preparing the target material from the second mixture by a vacuum hot-pressing sintering process. Therefore, the target material prepared by the preparation method provided by the application has the advantages of uniform components, smooth surface, small roughness and low oxygen content.)

1. A preparation method of a carbon-doped phase change storage material target is characterized by comprising the following steps:

obtaining a raw material of a phase-change material;

mixing the raw materials according to a stoichiometric ratio to obtain a first mixture, and heating and reacting the first mixture at a set temperature to generate a phase-change material compound;

preparing the phase-change material compound into phase-change material powder by adopting a high-energy ball milling or jet milling method;

uniformly mixing the phase-change material powder with graphene to prepare a second mixture;

and preparing the target material from the second mixture by a vacuum hot-pressing sintering process.

2. The method for preparing a carbon-doped phase-change storage material target according to claim 1, wherein the phase-change material compound is a chalcogenide compound, and the phase-change material compound comprises a germanium-antimony-tellurium alloy, an antimony-tellurium alloy, a germanium-tellurium alloy, a titanium-antimony-tellurium alloy or a tantalum-antimony-tellurium alloy.

3. The method for preparing the carbon-doped phase change memory material target according to claim 1, wherein the addition amount of the graphene is 4 mol% to 25 mol%.

4. The method for preparing a carbon-doped phase change memory material target according to claim 1, wherein the particle size of the phase change material powder is 1-20 μm.

5. The method as claimed in claim 1, wherein the predetermined temperature is 300-900 ℃.

6. A carbon-doped phase-change storage material target material, which is prepared by the preparation method of the carbon-doped phase-change storage material target material according to any one of claims 1 to 5;

the target comprises the components of a phase-change material compound and graphene.

7. The carbon-doped phase change memory material target according to claim 6, wherein the particle size of the target is 1-20 μm.

8. The carbon-doped phase-change memory material target as claimed in claim 6, wherein the oxygen content of the target is less than 200 ppm.

9. The carbon-doped phase change memory material target as claimed in claim 6, wherein the graphene content is 4 mol% to 25 mol%.

10. The carbon-doped phase-change storage material target as claimed in claim 6, wherein the phase-change material compound is a chalcogenide compound, and the phase-change material compound comprises a germanium-antimony-tellurium alloy, a germanium-tellurium alloy, a titanium-antimony-tellurium alloy or a tantalum-antimony-tellurium alloy.

Technical Field

The application relates to the technical field of micro-nano electronics, in particular to a carbon-doped phase change storage material target and a preparation method thereof.

Background

Phase Change Memory (PCM) has the advantages of non-volatility, good micro-performance, compatibility with Complementary Metal Oxide Semiconductor (CMOS) process, long cycle life, high-speed reading, multi-level storage, radiation resistance and the like, and is considered to be the next-generation non-volatile storage technology with the most potential. The principle of PCM is to utilize the large difference in resistivity before and after phase change of a material to achieve data storage. In a PCM, the resistivity of one state (i.e., crystalline) is low and the resistivity of the other state (i.e., amorphous) is high. A logic "1" or a logic "0" depends on the resistance state the phase change material is in. Because the performance of PCM is between that of conventional Memory and flash Memory, and combines the advantages of both chips, it is known in the art as Storage Class Memory (SCM). The advantages enable the PCM to have wide application prospect in the fields of new generation data centers, high-end servers, artificial intelligence chips, logic-memory integrated SOC and the like.

In PCM, the phase change material as a storage medium and its preparation process are critical to the performance of PCM devices. On one hand, PCM needs to withstand the back-end-of-line (BEOL) high-temperature process during the preparation process, and puts a very high requirement on the thermal stability of the phase-change material. On the other hand, Physical sputtering (PVD) is currently used in industrial production, and the quality of the phase-change material film and the PCM product yield are closely related to the quality of the phase-change material target.

The carbon-doped phase-change material has the characteristic of good thermal stability and is applied to PCM preparation, but the conventional carbon-doped phase-change material target has the problems of uneven micro-area component structure, larger target particles and higher oxygen content. When the target material is adopted to prepare the phase-change material, the problems of poor film component uniformity, high oxygen content and large particles generated by sputtering can be caused, and the yield of the PCM chip is reduced.

Disclosure of Invention

The method solves the technical problems that the micro-area components of the phase change storage material target prepared in the prior art are of uneven structure, large target particles and high in oxygen content.

In order to solve the technical problem, the embodiment of the application discloses a preparation method of a carbon-doped phase change storage material target, which comprises the following steps:

obtaining a raw material of a phase-change material;

mixing phase-change raw materials according to a stoichiometric ratio to obtain a first mixture, and heating and reacting the first mixture at a set temperature to generate a phase-change material compound;

preparing a phase-change material compound into phase-change material powder by adopting a high-energy ball milling or jet milling method;

uniformly mixing the phase-change material powder with graphene to prepare a second mixture;

and preparing the target material from the second mixture by a vacuum hot-pressing sintering process.

Further, the phase change material compound is a sulfur compound, and the phase change material comprises germanium antimony tellurium alloy, germanium tellurium alloy, titanium antimony tellurium alloy or tantalum antimony tellurium alloy.

Further, the addition amount of the graphene is 4-25 mol%.

Further, the particle size of the phase-change material powder is 1-20 microns.

Further, the set temperature is 300-.

The application also provides a carbon-doped phase-change storage material target material, which is prepared by the preparation method;

the target material comprises a phase-change material compound and graphene.

Further, the particle size of the target material is 1 to 20 μm.

Further, the oxygen content of the target is less than 200 ppm.

Further, the content of the graphene is 4 mol% to 25 mol%.

Further, the phase change material compound is a sulfur compound, and the phase change material comprises germanium antimony tellurium alloy, germanium tellurium alloy, titanium antimony tellurium alloy or tantalum antimony tellurium alloy.

By adopting the technical scheme, the application has the following beneficial effects:

the carbon-doped phase change storage material target is formed by uniformly mixing and pressing superfine phase change material powder and graphene powder, and the target prepared by the preparation method provided by the application is uniform in component, smooth in surface, small in roughness and low in oxygen content. The carbon-doped phase-change material film prepared by the target material has uniform component distribution, can avoid particles introduced by sputtering, is beneficial to the improvement of the yield, and can effectively inhibit the segregation and migration of elements of the phase-change material in the crystal boundary of the phase-change material by the graphene, thereby improving the thermal stability and reliability of the phase-change material.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

Fig. 1 is a schematic flow chart illustrating a method for manufacturing a target material of a carbon-doped phase-change memory material according to an embodiment of the present disclosure;

Detailed Description

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

Reference herein to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic may be included in at least one implementation of the present application. In the description of the embodiments of the present application, it is to be understood that the terms "upper", "lower", "top", "bottom", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are only for convenience in describing the present application and simplifying the description, and do not indicate or imply that the referred devices or elements must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present application. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. Moreover, the terms "first," "second," and the like are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the application described herein are capable of operation in sequences other than those illustrated or described herein.

Referring to fig. 1, fig. 1 is a method for preparing a target material of a carbon-doped phase-change memory material according to an embodiment of the present disclosure, including the following steps:

s1: obtaining a phase-change raw material;

s2: mixing phase-change raw materials according to a stoichiometric ratio to obtain a first mixture, and heating and reacting the first mixture at a set temperature to generate a phase-change material compound;

s3: preparing a phase-change material compound into phase-change material powder by adopting a high-energy ball milling or jet milling method;

s4: uniformly mixing the phase-change material powder with graphene to prepare a second mixture;

s5: and preparing the target material from the second mixture by a vacuum hot-pressing sintering process.

In the embodiment of the application, the phase-change material compound is a chalcogenide compound, and the phase-change material may be a germanium-antimony-tellurium alloy, an antimony-tellurium alloy, a germanium-tellurium alloy, a titanium-antimony-tellurium alloy, a tantalum-antimony-tellurium alloy, or other chalcogenide compounds.

In the embodiment of the application, the addition amount of the graphene is 4 mol% to 25 mol%.

In the embodiment of the application, the particle size of the phase-change material powder is 1-20 microns.

In the embodiment of the application, the set temperature is 300-.

The application also provides a carbon-doped phase-change storage material target material, which is prepared by the preparation method;

the target material comprises a phase-change material compound and graphene.

In the examples of the present application, the particle size of the target material is 1 to 20 μm.

In the embodiment of the application, the oxygen content of the target is lower than 200 ppm.

In the embodiment of the application, the content of the graphene is 4 mol% to 25 mol%.

In the embodiment of the application, the phase-change material compound is a chalcogenide compound, and the phase-change material may be any one of germanium-antimony-tellurium alloy, germanium-tellurium alloy, titanium-antimony-tellurium alloy, tantalum-antimony-tellurium alloy, or other chalcogenide compounds.

Based on the above, several embodiments are described below.