阅读说明：本技术 一种抗镀干膜加工方法 (Plating-resistant dry film processing method ) 是由 潘海进 杨海龙 石东 于 2019-10-23 设计创作，主要内容包括：本发明公开了一种抗镀干膜加工方法,该方法包括：依次对待处理板材进行贴抗镀干膜、干膜曝光以及干膜显影处理；对显影后的待处理板材进行紫外光照射；对照射后的待处理板材采用化学沉积的方式进行表面处理。该方法通过在对待处理板材采用化学沉积的方式进行表面处理前增加紫外光照射流程,将抗镀感光干膜图形转移工艺与紫外光照射及对待处理板材采用化学沉积的方式进行表面处理流程搭配在一起,可增强干膜的耐化学、耐高温性能,克服了常规工艺中化学镀后出现干膜浮离的缺点,采用本方法能够避免产品因干膜浮离而报废,提升产品良率。(The invention discloses a processing method of a plating-resistant dry film, which comprises the following steps: sequentially carrying out plating resistance dry film pasting, dry film exposure and dry film developing treatment on a plate to be treated; carrying out ultraviolet irradiation on the developed plate to be processed; and carrying out surface treatment on the irradiated plate to be treated in a chemical deposition mode. According to the method, the ultraviolet irradiation flow is added before the surface treatment is carried out on the plate to be treated in a chemical deposition mode, the anti-plating photosensitive dry film pattern transfer process is matched with the ultraviolet irradiation flow and the surface treatment flow is carried out on the plate to be treated in a chemical deposition mode, the chemical resistance and high temperature resistance of a dry film can be enhanced, the defect that the dry film floats after chemical plating in the conventional process is overcome, the scrapping of the product due to the floating of the dry film can be avoided by adopting the method, and the yield of the product is improved.)

1. The plating resistance dry film processing method is characterized by comprising the following steps:

sequentially carrying out plating resistance dry film pasting, dry film exposure and dry film developing treatment on a plate to be treated;

carrying out ultraviolet irradiation on the developed plate to be treated;

and carrying out surface treatment on the irradiated plate to be treated in a chemical deposition mode.

2. The dry film plating-resistant processing method according to claim 1, wherein in the step of irradiating the developed board to be processed with ultraviolet light, the irradiation intensity of the ultraviolet light is correlated with the type and thickness of the dry film plating-resistant processing board.

3. The plating resistance dry film processing method according to claim 1, wherein in the step of performing surface treatment on the irradiated board to be treated by chemical deposition, the method comprises:

depositing a nickel layer, a palladium layer and a gold layer on the copper surface by adopting a chemical deposition mode; or depositing a nickel layer and a palladium layer on the copper surface by adopting a chemical deposition mode; or the surface treatment of depositing palladium and gold layers on the copper surface by adopting a chemical deposition mode.

4. The dry film plating resistance processing method according to claim 1, further comprising removing the dry film plating resistance after the surface treatment of the irradiated board to be processed by chemical deposition.

5. The plating resistance dry film processing method according to claim 1, wherein the plate to be processed is a circuit board or a packaging substrate.

6. The dry film plating resist processing method according to claim 1, wherein the dry film plating resist is a photosensitive dry film selectively plated or electroless plated, and the photosensitive dry film is composed of a transparent substrate, a photosensitive layer and a protective film in this order.

7. The plating resistance dry film processing method according to claim 6, wherein the transparent substrate is a polyester film substrate made of polyester film; the protective film is a transparent polyethylene film.

8. The plating resistant dry film processing method of claim 6, wherein the photosensitive layer comprises a photosensitive organic solvent and a photoinitiator.

9. The plating resistant dry film processing method according to claim 8, wherein the photosensitive organic solvent comprises an alkali soluble maleic anhydride copolymer and a photosensitive crosslinking monomer.

10. The plating-resistant dry film processing method of claim 8, wherein the photoinitiator is an aryl ketone compound or a thioether compound.