阅读说明：本技术 电子产品壳体及其制备方法 (Electronic product shell and preparation method thereof ) 是由 刘玉阳 赵长涛 于 2018-07-27 设计创作，主要内容包括：本发明涉及材料表面镀膜领域,公开了一种电子产品壳体及其制备方法。所述电子产品壳体包括基材、设于基材表面的铝铬过渡层和设于铝铬过渡层表面的类金刚石层。通过上述技术方案,本发明可降低DLC应力,改善其物理力学性能,并保持DLC本身良好的耐腐蚀,高硬度特性,进而提高了DLC与含硅基材之间的结合力。(The invention relates to the field of material surface coating, and discloses an electronic product shell and a preparation method thereof. The electronic product shell comprises a base material, an aluminum-chromium transition layer arranged on the surface of the base material and a diamond-like carbon layer arranged on the surface of the aluminum-chromium transition layer. Through the technical scheme, the stress of the DLC can be reduced, the physical and mechanical properties of the DLC are improved, the good corrosion resistance and high hardness of the DLC are kept, and the binding force between the DLC and the silicon-containing base material is further improved.)

1. The shell of the electronic product is characterized by comprising a base material, an aluminum-chromium transition layer arranged on the surface of the base material and a diamond-like carbon layer arranged on the surface of the aluminum-chromium transition layer.

2. The electronic product housing of claim 1, wherein the aluminum-chromium transition layer has an atomic content ratio of aluminum to chromium of 3: 7 to 5: 5;

preferably, the thickness of the aluminum-chromium transition layer is 10-40 nm.

3. An electronic enclosure as recited in claim 1, wherein the diamond-like carbon layer is formed from methane and graphite;

preferably, the diamond-like carbon layer has a thickness of 1 to 2 μm.

4. The electronic housing of claim 1, wherein the substrate is a silicon-containing substrate;

preferably, the silicon-containing substrate is glass or ceramic.

5. A preparation method of an electronic product shell is characterized by comprising the following steps:

(1) introducing argon under a vacuum condition, and depositing an aluminum-chromium target on the surface of the substrate to form an aluminum-chromium transition layer on the surface of the substrate;

(2) and introducing argon gas under a vacuum condition, and depositing a carbon source on the surface of the aluminum-chromium transition layer to form a diamond-like carbon layer on the surface of the aluminum-chromium transition layer.

6. The production method according to claim 5, wherein, before the step (1), an organic solvent washing step of the substrate is further included;

preferably, the substrate is a silicon-containing substrate; more preferably, the silicon-containing substrate is glass or ceramic.

7. The preparation method according to claim 5, wherein before the step (1), argon gas is introduced under vacuum condition to perform ion cleaning on the surface of the substrate and the surface of the aluminum chromium target respectively;

preferably, the ion cleaning conditions are: the temperature is 70-110 deg.C, and the pressure of ion cleaning is 1 × 10^-3-10×10^{- 3}Pa, the time is 5-50 min;

preferably, the ion source is a radio frequency ion source or a linear ion source.

8. The preparation method according to any one of claims 5 to 7, wherein in the step (1), an aluminum chromium target is sputtered on the surface of the substrate to perform deposition coating of an aluminum chromium transition layer;

preferably, the sputtering coating conditions of the aluminum chromium target are as follows: the temperature is 70-110 ℃, the argon flow is 400-^-3-10×10^-3Pa, sputtering power of 8-9kw, deposition time of 5-50 min;

preferably, the atomic content ratio of the aluminum to the chromium in the aluminum-chromium transition layer is 3: 7-5: 5;

preferably, the thickness of the aluminum-chromium transition layer is 10-40 nm.

9. The preparation method according to any one of claims 5 to 7, wherein in the step (2), the carbon source is deposited on the surface of the aluminum chromium transition layer under the following conditions: the temperature is 70-110 ℃, the deposition pressure is 0.1-0.5Pa, and the deposition time is 5-50 min;

preferably, the carbon source is methane and graphite.

10. An electronic housing made by the method of any one of claims 5-9.

Technical Field

The invention relates to the field of material surface coating, in particular to an electronic product shell and a preparation method thereof.

Background

Diamond-like carbon (DLC) is a metastable material that is generated by bonding in the form of sp3 and sp2 bonds, has both the excellent characteristics of diamond and graphite, and has high hardness and high resistivity. Good corrosion resistance and excellent tribological properties. Thus, diamond-like carbon (DLC) films can be used to improve the hardness of the workpiece surface, but DLC itself has a relatively high stress ratio and does not bond well to silicon-containing workpieces (e.g., glass, ceramic, etc.).

For example, CN104294230A in the prior art discloses a high-hardness and low-stress multi-component composite diamond-like coating, which is located on the surface of a substrate and is composed of diamond-like carbon, a first doping element and a second doping element, wherein the first doping element is aluminum element or Cu element, and the second doping element is chromium element or W element; in the multi-element composite diamond-like coating, the atomic percentage content of the first doping element is 1.56-4.69%, and the atomic percentage content of the second doping element is 1.56-4.69%. The DLC plated with Al and Cr elements is formed simultaneously, and the substrate is special such as hard alloy, various steels, aluminum alloy, magnesium alloy and the like, and has high requirement on interface matching.

Disclosure of Invention

The invention aims to overcome the problem of poor bonding force between DLC and a silicon-containing substrate in the prior art, and provides an electronic product shell and a preparation method thereof.

In order to achieve the above object, an aspect of the present invention provides an electronic product casing, which includes a substrate, an aluminum chromium transition layer disposed on a surface of the substrate, and a diamond-like carbon layer disposed on a surface of the aluminum chromium transition layer.

The second aspect of the present invention provides a method for manufacturing an electronic product housing, comprising the following steps:

(1) introducing argon under a vacuum condition, and depositing an aluminum-chromium target on the surface of the substrate to form an aluminum-chromium transition layer on the surface of the substrate;

(2) and introducing argon gas under a vacuum condition, and depositing a carbon source on the surface of the aluminum-chromium transition layer to form a diamond-like carbon layer on the surface of the aluminum-chromium transition layer.

The invention provides an electronic product shell prepared by the method.

Through the technical scheme, the stress of the DLC can be reduced, the physical and mechanical properties of the DLC are improved, the good high-hardness characteristic of the DLC is kept, and the binding force between the DLC and the silicon-containing substrate is further improved.

Detailed Description

The endpoints of the ranges and any values disclosed herein are not limited to the precise range or value, and such ranges or values should be understood to encompass values close to those ranges or values. For ranges of values, between the endpoints of each of the ranges and the individual points, and between the individual points may be combined with each other to give one or more new ranges of values, and these ranges of values should be considered as specifically disclosed herein.

The invention provides an electronic product shell which comprises a base material, an aluminum-chromium transition layer arranged on the surface of the base material and a diamond-like carbon layer arranged on the surface of the aluminum-chromium transition layer.

In the present invention, the inventors have found that if aluminum alone is used as the transition layer, the combination effect of chromium and the substrate (e.g. glass) is not good because the property of aluminum itself is soft, and the aluminum-chromium alloy is selected, and the physical property of the aluminum-chromium alloy is between that of aluminum and chromium, and the hardness of the aluminum-chromium alloy is also between that of chromium and aluminum, so the aluminum-chromium alloy is more suitable for the transition layer.

In the invention, the atomic content ratio of aluminum and chromium elements in the aluminum-chromium transition layer is 3: 7-5: 5, so that the bonding force between the DLC and the silicon-containing base material can be further improved.

In the present invention, the thickness of the aluminum-chromium alloy may be selected in a wide range, and preferably, the thickness of the aluminum-chromium alloy layer is 10 to 40nm, considering the combination of the substrate and the aluminum-chromium alloy layer and the aluminum-chromium alloy and DLC layer and the hardness of the DLC layer.

In the present invention, the diamond-like layer may be any of various conventional diamond-like layers in the art. For example, the diamond-like carbon layer may be formed of methane and graphite. Preferably, the diamond-like carbon layer has a thickness of 1 to 2 μm.

In the present invention, the substrate may be various conventional substrates in the art. For example, the substrate may be a silicon-containing substrate. Preferably, the silicon-containing substrate may be glass or ceramic.

The invention also provides a preparation method of the electronic product shell, which comprises the following steps:

(1) introducing argon under a vacuum condition, and depositing an aluminum-chromium target on the surface of the substrate to form an aluminum-chromium transition layer on the surface of the substrate;

(2) and introducing argon gas under a vacuum condition, and depositing a carbon source on the surface of the aluminum-chromium transition layer to form a diamond-like carbon layer on the surface of the aluminum-chromium transition layer.

In a preferred embodiment of the present invention, before step (1), an organic solvent cleaning step of the substrate is further included. Preferably, the substrate is a silicon-containing substrate; more preferably, the silicon-containing substrate is glass or ceramic.

In a preferred embodiment of the present invention, before the step (1), argon gas is introduced under a vacuum condition to perform ion cleaning on the surface of the substrate and the surface of the aluminum-chromium target respectively, so as to achieve bombardment cleaning of the surface of the substrate, surface roughening and bombardment cleaning of the surface of the aluminum-chromium target. Preferably, this embodiment can be performed after the organic solvent cleaning step of the substrate is performed and dried.

Preferably, the conditions for cleaning the underlayer coating are as follows: the temperature is 70-110 deg.C, and the pressure of ion cleaning is 1 × 10^-3-10×10^-3Pa, and the time is 5-50 min.

In the present invention, the ion source may be various conventional ion sources in the art. For example, the ion source can be a radio frequency ion source or a linear ion source, the working voltage of the ion source is 2.0-5.0kv, and the ion beam current is 60-80 mA.

In the invention, in the step (1), an aluminum chromium target is sputtered on the surface of the substrate to perform deposition coating of the aluminum chromium transition layer, so that good combination between the aluminum chromium transition layer and the surface of the silicon-containing substrate is realized.

In the present invention, factors affecting the sputtering film formation speed and quality include temperature, vacuum degree, argon flow, sputtering gas pressure, sputtering power, deposition time, and the like. Preferably, the sputtering coating conditions of the aluminum chromium target are as follows: the temperature is 70-110 ℃, the argon flow is 400-^-3-10×10^-3Pa, sputtering power of 8-9kw, deposition time of 5-50 min.

In the invention, the atomic content ratio of aluminum and chromium elements in the aluminum-chromium transition layer is 3: 7-5: 5, so that the bonding force between DLC and the silicon-containing base material can be further improved.

In the present invention, the thickness of the aluminum-chromium alloy may be selected in a wide range, and preferably, the thickness of the aluminum-chromium alloy layer is 10 to 40nm, considering the combination of the substrate and the aluminum-chromium alloy layer and the aluminum-chromium alloy and DLC layer and the hardness of the DLC layer.

In the invention, in order to realize good combination between the aluminum chromium transition layer and the diamond-like carbon layer, in the step (2), the conditions for depositing the carbon source on the surface of the aluminum chromium transition layer are as follows: the temperature is 70-110 deg.C, the deposition pressure is 0.1-0.5Pa, and the deposition time is 5-50 min.

In the present invention, the carbon source may be various conventional carbon sources in the art. For example, the carbon source may be methane and graphite.

The invention also provides an electronic product shell prepared by the method.

The present invention will be described in detail below by way of examples. In the following examples:

in the case where no particular mention is made, commercially available products are used as the starting materials.