阅读说明：本技术 掩模板及显示面板的制作方法 (Mask plate and manufacturing method of display panel ) 是由 袁松 于 2021-09-07 设计创作，主要内容包括：本申请实施例公开了一种掩模板及显示面板的制作方法,掩模板设置有蒸镀口和避让槽,蒸镀口沿第一方向贯穿掩模板；避让槽沿第一方向设于掩模板的一侧,避让槽环绕蒸镀口设置,避让槽与蒸镀口连通,避让槽在第一方向上的深度小于掩模板在第一方向上的厚度。采用本申请实施例的掩模板在阴极上制作公共层时,掩模板的避让槽能避开阴极的边界,防止刮伤阴极的情况发生,避免产生导电碎屑而导致显示面板不良的情况发生；此外,避让槽的深度小于掩模板的厚度,即避让槽不是完全贯穿掩模板设置的,因此避让槽不会改变蒸镀口的开口图案,不会影响公共层的图案形状。(The embodiment of the application discloses a mask plate and a manufacturing method of a display panel, wherein the mask plate is provided with a vapor plating port and an avoiding groove, and the vapor plating port penetrates through the mask plate along a first direction; the avoiding groove is arranged on one side of the mask plate along the first direction, the avoiding groove is arranged around the evaporation opening and communicated with the evaporation opening, and the depth of the avoiding groove in the first direction is smaller than the thickness of the mask plate in the first direction. When the mask plate of the embodiment of the application is adopted to manufacture the common layer on the cathode, the avoiding groove of the mask plate can avoid the boundary of the cathode, so that the situation of scratching the cathode is prevented, and the situation of generating conductive debris to cause the poor display panel is avoided; in addition, the depth of the avoiding groove is smaller than the thickness of the mask plate, namely, the avoiding groove does not completely penetrate through the mask plate, so that the avoiding groove does not change the opening pattern of the evaporation port, and the pattern shape of the common layer is not influenced.)

1. A mask plate is characterized in that a vapor plating port and an avoiding groove are arranged on the mask plate;

the evaporation opening penetrates through the mask plate along a first direction;

the dodging groove is formed in one side of the mask plate in the first direction, the dodging groove surrounds the evaporation opening, the dodging groove is communicated with the evaporation opening, and the depth of the dodging groove in the first direction is smaller than the thickness of the mask plate in the first direction.

2. The mask plate according to claim 1, wherein the evaporation opening comprises a deposition opening, a limiting opening and a guiding opening which are sequentially communicated along the first direction, the avoiding groove is arranged around the deposition opening, and the avoiding groove is communicated with the deposition opening.

3. The mask plate according to claim 2, wherein the mask plate is provided with an avoiding wall, a first side wall and a second side wall which are connected in sequence, wherein the avoiding wall encloses to form the avoiding groove, the first side wall encloses to form the limiting opening, and the second side wall encloses to form the guiding opening.

4. The mask plate of claim 3, wherein the relief wall comprises at least one of a flat surface, a tapered surface, and an arcuate surface.

5. The mask plate according to any one of claims 2 to 4, wherein the position limiting opening is arranged in a tapered manner from the deposition opening to the direction of the guide opening.

6. A mask plate according to any one of claims 2 to 4, wherein the guide openings are arranged to be gradually enlarged from the deposition opening toward the direction of the guide openings.

7. A manufacturing method of a display panel is characterized by comprising the following steps:

providing a mask plate according to any one of claims 1 to 6, placing the mask plate on a substrate, wherein the substrate is provided with a first layer structure, the first layer structure is covered in the avoiding groove, the first layer structure is arranged at a distance from the mask plate, and the evaporation opening is arranged corresponding to part of the first layer structure;

and depositing a material on the first layer structure by taking the mask plate as a shield to obtain a second layer structure arranged on the first layer structure, wherein the area of the second layer structure is smaller than that of the first layer structure.

8. The method for manufacturing a display panel according to claim 7, wherein the mask plate is provided with an avoiding wall surrounding the avoiding groove, and the avoiding wall has a portion which is provided at an interval on a side of the first layer structure away from the substrate and overlaps with a portion of the first layer structure in the first direction.

9. The method of claim 7, wherein a depth of the avoiding groove in the first direction is greater than or equal to a thickness of the second layer structure.

10. The method of claim 7, wherein the avoiding groove has a depth in the first direction greater than 60 nm and less than 100 nm.

Technical Field

The application relates to the field of display, in particular to a mask plate and a manufacturing method of a display panel.

Background

In recent years, with the rapid advance of the OLED (Organic Light Emitting Diode) display technology, the OLED product has attracted more and more attention and applications due to its advantages of lightness, thinness, fast response, wide viewing angle, high contrast, flexibility, and the like, and is mainly applied to the display fields of mobile phones, flat panels, televisions, and the like.

The OLED display panel comprises a cathode and a common layer arranged above the cathode, wherein the common layer is used for protecting the cathode. In the boundary design of the OLED display panel, the common layer cannot completely cover the cathode, and the edge of the common layer needs to be retracted by a certain distance and exposed out of the boundary area of the cathode. In the process of manufacturing the common layer, a mask plate is required to be arranged on the cathode, a pattern opening is arranged on the mask plate, the area of the pattern opening is smaller than that of the cathode, the mask plate is used as a shielding part, materials are deposited on the cathode through the pattern opening, the common layer is formed, in the process, the mask plate can scratch the cathode and generate conductive debris, the conductive debris easily causes the problems of poor wiring short circuit and the like of the display panel, and the yield of products is greatly reduced.

Disclosure of Invention

The embodiment of the application provides a mask plate and a manufacturing method of a display panel, and the technical problem that the mask plate easily scratches a cathode when a common layer is manufactured on the cathode can be solved.

The embodiment of the application provides a mask plate, wherein a vapor plating opening and an avoiding groove are formed in the mask plate;

the evaporation opening penetrates through the mask plate along a first direction;

and the dodging groove is formed in one side of the mask plate in the first direction and surrounds the evaporation opening, the dodging groove is communicated with the evaporation opening, and the depth of the dodging groove in the first direction is smaller than the thickness of the mask plate in the first direction.

Optionally, in some embodiments of this application, the coating by vaporization mouth includes edge deposit mouth, spacing mouth and the direction opening that first direction communicates in proper order, dodge the groove and encircle the deposit mouth sets up, dodge the groove with the deposit mouth communicates.

Optionally, in some embodiments of this application, mask plate is equipped with what connect gradually dodges wall, first lateral wall and second lateral wall, wherein, dodge the wall and enclose and close and form dodge the groove, first lateral wall encloses and forms spacing mouthful, second lateral wall encloses and forms the uide port.

Optionally, in some embodiments of the present application, the bypass wall includes at least one of a flat surface, a tapered surface, and an arcuate surface.

Optionally, in some embodiments of the present application, the limiting opening is tapered from the deposition opening toward the guiding opening.

Optionally, in some embodiments of the present application, the guiding opening is gradually enlarged from the deposition opening to the guiding opening.

The embodiment of the application further provides a manufacturing method of the display panel, which comprises the following steps:

providing the mask plate, placing the mask plate on a substrate, wherein the substrate is provided with a first layer structure, the first layer structure is covered in the avoiding groove, the first layer structure and the mask plate are arranged at intervals, and the evaporation opening is arranged corresponding to part of the first layer structure;

and depositing a material on the first layer structure by taking the mask plate as a shield to obtain a second layer structure arranged on the first layer structure, wherein the area of the second layer structure is smaller than that of the first layer structure.

Optionally, in some embodiments of the present application, the mask plate is provided with an avoiding wall, the avoiding wall surrounds the avoiding groove, and the avoiding wall has a portion that is spaced apart from one side of the first layer structure of the substrate and overlaps with part of the first layer structure in the first direction.

Optionally, in some embodiments of the present application, a depth of the avoidance groove in the first direction is greater than or equal to a thickness of the second layer structure.

Optionally, in some embodiments of the present application, a depth of the avoidance groove in the first direction is greater than 60 nm and less than 100 nm.

The embodiment of the application provides a mask plate and a manufacturing method of a display panel, wherein an avoiding groove is additionally arranged on the mask plate, the avoiding groove is arranged around an evaporation opening and is communicated with the evaporation opening; in addition, the depth of the avoiding groove is smaller than the thickness of the mask plate, namely, the avoiding groove does not completely penetrate through the mask plate, so that the avoiding groove does not change the opening pattern of the evaporation port, and the pattern shape of the common layer is not influenced.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

Fig. 1 is a schematic diagram illustrating a second layer structure fabricated on a first layer structure by using a mask plate without an avoidance groove according to an embodiment of the present disclosure;

fig. 2 is a schematic cross-sectional structure diagram of a first mask plate provided in an embodiment of the present application;

fig. 3 is a schematic diagram of fabricating a second layer structure on a first layer structure by using a first mask plate according to an embodiment of the present disclosure;

fig. 4 is a schematic cross-sectional structural diagram of a second mask blank provided in an embodiment of the present application;

fig. 5 is a schematic diagram illustrating a second layer structure fabricated on a first layer structure by using a second mask plate according to an embodiment of the present disclosure;

fig. 6 is a schematic cross-sectional structural view of a third mask blank provided in an embodiment of the present application;

fig. 7 is a schematic diagram of a second layer structure fabricated on a first layer structure by using a third mask plate according to an embodiment of the present disclosure;

fig. 8 is a schematic cross-sectional structural view of a fourth mask blank provided in the embodiment of the present application;

fig. 9 is a schematic diagram of a second layer structure fabricated on a first layer structure by using a fourth mask plate according to an embodiment of the present disclosure;

fig. 10 is a schematic flowchart of a method for manufacturing a display panel according to an embodiment of the present disclosure.

Detailed Description

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application. Furthermore, it should be understood that the detailed description and specific examples, while indicating exemplary embodiments of the invention, are given by way of illustration and explanation only, and are not intended to limit the scope of the invention. In the present application, unless indicated to the contrary, the use of the directional terms "upper" and "lower" generally refer to the upper and lower positions of the device in actual use or operation, and more particularly to the orientation of the figures of the drawings; while "inner" and "outer" are with respect to the outline of the device.

The embodiment of the application provides a mask plate and a manufacturing method of a display panel. The following are detailed below. It should be noted that the following description of the embodiments is not intended to limit the preferred order of the embodiments.

As shown in fig. 1, the vapor deposition port 110 ' is formed on the mask plate 100 ', the mask plate 100 ' is not provided with an avoiding groove, and the mask plate 100 ' is used as a shield to deposit a material on the first layer structure 210 ' in an area corresponding to the vapor deposition port 110 ' to form a second layer structure 220 '; in the deposition process, the connection between the inner wall of the evaporation opening 110 ' and the mask plate 100 ' is easily in contact with the boundary of the first layer structure 210 ', which causes the boundary of the first layer structure 210 ' to be scratched, and the boundary of the first layer structure 210 ' to be scratched can generate debris, which can easily cause product defects, for example, when the first layer structure 210 ' is a cathode, the debris generated after the boundary of the first layer structure 210 ' is scratched has a conductive characteristic, and the debris can easily cause short-circuiting of the traces, which causes defects.

Referring to fig. 2, 4, 6 and 8, an embodiment of the present invention provides a mask plate 100, wherein the mask plate 100 is provided with a vapor deposition port 110 and an avoiding groove 120;

the evaporation opening 110 penetrates through the mask plate 100 along the first direction X;

the avoiding groove 120 is arranged on one side of the mask plate 100 along the first direction X, the avoiding groove 120 is arranged around the evaporation opening 110, the avoiding groove 120 is communicated with the evaporation opening 110, and the depth H1 of the avoiding groove 120 in the first direction X is smaller than the thickness of the mask plate 100 in the first direction X. In this embodiment, the first direction X is a thickness direction of the mask plate 100.

Referring to fig. 2, 4, 6 and 8, with reference to fig. 3, 5, 7 and 9, a second layer structure 260 is fabricated on the first layer structure 250 by using the mask plate 100 according to the embodiment of the present disclosure, the first layer structure 250 is disposed on the substrate 200, the mask plate 100 is disposed on the side of the substrate 200 where the first layer structure 250 is disposed, and since it is not necessary to deposit a material on the boundary region of the first layer structure 250, the area of the evaporation opening 110 is smaller than the area of the first layer structure 250, thereby avoiding exposing the boundary region of the first layer structure 250 and preventing the second layer structure 260 from being formed on the boundary region of the first layer structure 250; using the mask plate 100 as a mask, a material is deposited on the first layer structure 250 through the evaporation opening 110, so as to form a second layer structure 260 on the first layer structure 250. In the deposition process, as the avoiding groove 120 is arranged on the mask plate 100, the avoiding groove 120 is arranged around the evaporation opening 110, and the avoiding groove 120 is communicated with the evaporation opening 110, when the mask plate 100 is adopted to manufacture the second layer structure 260 on the first layer structure 250, the avoiding groove 120 of the mask plate 100 can avoid the boundary of the first layer structure 250, so that the first layer structure 250 is prevented from being scratched, and the bad condition caused by the generation of fragments is avoided; in addition, the depth H1 of the avoiding groove 120 is smaller than the thickness of the mask plate 100, that is, the avoiding groove 120 is not completely disposed through the mask plate 100, so the avoiding groove 120 does not change the opening pattern of the evaporation opening 110, and the pattern shape of the second layer structure 260 is not affected.

Optionally, in this embodiment, the first layer structure 250 may be a cathode, and the second layer structure 260 may be a common layer for protecting the cathode, when the common layer is manufactured on the cathode by using the mask plate 100, the avoiding groove 120 of the mask plate 100 can avoid the boundary of the cathode, so as to prevent the cathode from being scratched, and avoid the occurrence of poor display panel caused by the generation of conductive debris; in addition, the depth H1 of the avoiding groove 120 is smaller than the thickness of the mask plate 100, that is, the avoiding groove 120 is not completely disposed through the mask plate 100, so the avoiding groove 120 does not change the opening pattern of the evaporation opening 110, and the pattern shape of the common layer is not affected. Of course, the first layer structure 250 and the second layer structure 260 may be other layer structures according to the choice and specific choice of the actual situation, and are not limited herein.

Specifically, as shown in fig. 2, 4, 6 and 8, and with reference to fig. 3, 5, 7 and 9, the evaporation opening 110 includes a deposition opening 111, a limiting opening 112 and a guiding opening 113 sequentially connected along the first direction X, the avoiding groove 120 is disposed around the deposition opening 111, and the avoiding groove 120 is connected to the deposition opening 111. Under the structure, the guide port 113 is used for guiding materials to enter, the limiting port 112 is used for limiting the deposition angle of the materials, the deposition port 111 is used for depositing the materials on the first layer structure 250, and the deposition accuracy of the materials can be adjusted through the cooperation of the deposition port 111, the limiting port 112 and the guide port 113.

It should be mentioned that, in order to guarantee the deposition accuracy, the avoiding groove 120 and the deposition port 111 of the embodiment of the present application are communicated, and the avoiding groove 120 is communicated with the limiting port 112 through the deposition port 111, that is, the avoiding groove 120 is not directly communicated with the limiting port 112, so as to be arranged, the material cannot directly enter the avoiding groove 120 from the limiting port 112, in the actual deposition process, very little material enters the deposition port 111 through the limiting port 112 and is diffused to the avoiding groove 120 to be deposited on the first layer structure 250, that is, the setting of the avoiding groove 120 does not cause great influence on the deposition angle of the limiting material of the limiting port 112, and the deposition accuracy of the material is effectively guaranteed.

Specifically, as shown in fig. 2, 4, 6 and 8, the mask plate 100 is provided with a bypass wall 130, a first side wall 140 and a second side wall 150, which are connected in sequence, specifically, one end of the bypass wall 130 is connected to the surface of one side of the mask plate 100, the other end of the mask plate 100 is connected to one end of the first side wall 140, the other end of the first side wall 140 is connected to one end of the second side wall 150, and the other end of the second side wall 150 is connected to the surface of the other side of the mask plate 100; in this embodiment, the avoiding wall 130 encloses to form the avoiding groove 120, the first sidewall 140 encloses to form the limiting opening 112, and the second sidewall 150 encloses to form the guiding opening 113.

Specifically, as shown in fig. 2, 4, 6, and 8, the bypass wall 130 includes at least one of a flat surface, a tapered surface, and an arc surface.

Alternatively, as shown in fig. 2 and 3, the avoiding wall 130 includes a first plane 131 and a second plane 132 connected in sequence, specifically, one end of the first plane 131 is connected to the surface of one side of the mask plate 100, the other end of the first plane 131 is connected to one end of the second plane 132, and the other end of the second plane 132 is connected to one end of the first side wall 140 far from the second side wall 150. Under the structure, the first plane 131 and the second plane 132 are sequentially connected to form the avoiding wall 130 avoiding the first layer structure 250, so that the avoiding wall 130 is prevented from scratching the first layer structure 250. It is understood that the number of planes constituting the bypass wall 130 may be appropriately adjusted according to the actual choice and specific requirements, and is not limited thereto.

Specifically, as shown in fig. 2 and 3, an angle α between the first plane 131 and the surface of the one side of the mask plate 100 is 60 degrees to 90 degrees, and an angle β between the first plane 131 and the second plane 132 is 90 degrees to 120 degrees, for example, the angle α between the first plane 131 and the surface of the one side of the mask plate 100 may be 60 degrees, 65 degrees, 70 degrees, 75 degrees, 80 degrees, 85 degrees, or 90 degrees, and the angle β between the first plane 131 and the second plane 132 may be 90 degrees, 95 degrees, 100 degrees, 105 degrees, 110 degrees, 115 degrees, or 120 degrees. With this arrangement, the avoiding wall 130 can be prevented from scratching the boundary of the first layer structure 250.

Further, as shown in fig. 2 and 3, the second plane 132 may be parallel to the surface of one side of the mask plate 100, in which case the angle α between the first plane 131 and the surface of one side of the mask plate 100 is complementary to the angle β between the first plane 131 and the second plane 132.

Alternatively, as shown in fig. 4 and 5, the bypass wall 130 is a first arc surface 133, and the first arc surface 133 is a concave shape facing away from the deposition opening 111, so that the bypass wall 130 can be prevented from scratching the boundary of the first layer structure 250. It is understood that, although the bypass wall 130 is only one curved surface in the embodiment shown in fig. 4 and 5, the bypass wall 130 may be composed of more curved surfaces according to the choice of actual conditions and specific requirements, and is not limited thereto.

Alternatively, as shown in fig. 6 and 7, the avoiding wall 130 includes a first tapered surface 134 and a second tapered surface 135 which are connected in sequence, specifically, one end of the first tapered surface 134 is connected to the surface of one side of the mask plate 100, the other end of the first tapered surface 134 is connected to one end of the second tapered surface 135, and the other end of the second tapered surface 135 is connected to one end of the first side wall 140 far from the second side wall 150. In this structure, the first tapered surface 134 and the second tapered surface 135 are sequentially connected to form the avoiding wall 130 avoiding the first layer structure 250, so as to prevent the avoiding wall 130 from scratching the first layer structure 250. It is understood that the number of the tapered surfaces forming the avoiding wall 130 can be adjusted according to the choice of actual conditions and specific requirements, and is not limited herein.

Optionally, as shown in fig. 8 and 9, the avoiding wall 130 includes a first connecting surface 136, a second connecting surface 137, and a third connecting surface 138, which are connected in sequence, where the first connecting surface 136 is a plane, the second connecting surface 137 is a conical surface, and the third connecting surface 138 is an arc surface, that is, the avoiding wall 130 is a combined surface of the plane, the conical surface, and the arc surface. With this structure, the first connecting surface 136, the second connecting surface 137 and the third connecting surface 138 are sequentially connected to form the avoiding wall 130 avoiding the first layer structure 250, so as to prevent the avoiding wall 130 from scratching the first layer structure 250. It can be understood that, according to the selection and specific requirements of the actual situation, the avoiding wall 130 may also be a combined surface including any two of a plane, a conical surface and an arc surface, and the number of the plane, the conical surface and the arc surface included in the avoiding wall 130 may be appropriately adjusted, which is not limited herein.

Alternatively, as shown in fig. 3, 5, 7 and 9, the bypass wall 130 has a portion which is spaced apart from the side of the first layer structure 250 away from the substrate 200 and overlaps with a portion of the first layer structure 250 in the first direction X, and a width W of the portion of the bypass wall 130 overlapping with the first layer structure 250 in the first direction X is a distance between a boundary of the first layer structure 250 and a boundary of the second layer structure 260, specifically, a width W of the portion of the bypass wall 130 overlapping with the first layer structure 250 in the first direction X is greater than 0 mm and less than 3 mm, for example, a width W of the portion of the bypass wall 130 overlapping with the first layer structure 250 in the first direction X may be 0.25 mm, 0.5 mm, 0.75 mm, 1.25 mm, 1.5 mm, 1.75 mm, 2 mm, 2.25 mm, 2.5 mm or 2.75 mm. With this arrangement, material deposition in the region between the boundary of the first layer structure 250 and the boundary of the second layer structure 260 can be avoided.

Optionally, as shown in fig. 2, 4, 6, and 8, a depth H1 of the avoiding groove 120 in the first direction X is greater than or equal to a thickness of the second layer structure 260, specifically, a depth H1 of the avoiding groove 120 in the first direction X is greater than 60 nm and less than 100 nm, for example, a depth H1 of the avoiding groove 120 in the first direction X may be 65 nm, 70 nm, 75 nm, 80 nm, 85 nm, 90 nm, or 95 nm. With this arrangement, material deposition in the region between the boundary of the first layer structure 250 and the boundary of the second layer structure 260 can be prevented.

Specifically, as shown in fig. 2, 4, 6 and 8, with reference to fig. 3, 5, 7 and 9, the limiting opening 112 is tapered from the deposition opening 111 toward the guide opening 113, that is, the opening area of the limiting opening 112 is gradually reduced from the deposition opening 111 toward the guide opening 113, and with this structure, the aperture of the opening on the side of the limiting opening 112 close to the guide opening 113 is the smallest, so as to limit the angle of the material entering the limiting opening 112 from the guide opening 113, and the limiting opening 112 is tapered from the deposition opening 111 toward the guide opening 113, so as to prevent the material from being blocked in the limiting opening 112, so that the material can enter the deposition opening 111 from the limiting opening 112 and finally deposit on the first layer structure 250.

Alternatively, as shown in fig. 2, 4, 6 and 8, the included angle θ between the first sidewall 140 and the surface of the side of the mask plate 100 is greater than or equal to 30 degrees and less than 90 degrees, for example, the included angle θ between the first sidewall 140 and the surface of the side of the mask plate 100 may be 30 degrees, 35 degrees, 40 degrees, 45 degrees, 50 degrees, 55 degrees, 60 degrees, 65 degrees, 70 degrees, 75 degrees, 80 degrees or 85 degrees, so that the position-limiting opening 112 is arranged in a tapered manner from the deposition opening 111 to the direction of the guide opening 113.

Optionally, as shown in fig. 2, 4, 6, and 8, the depth H2 of the spacing port 112 along the first direction X is greater than 0 micron and less than 8 microns, for example, the depth H2 of the spacing port 112 along the first direction X is 0.5 micron, 1 micron, 1.5 micron, 2 microns, 2.5 microns, 3 microns, 3.5 microns, 4 microns, 4.5 microns, 5 microns, 5.5 microns, 6 microns, 6.5 microns, 7 microns, or 7.5 microns. Under the arrangement, as the material gradually enters the limiting opening 112 in the direction close to the deposition opening 111, the moving speed of the material is reduced, and if the depth H2 of the limiting opening 112 is large, the material is easy to block the limiting opening 112, so that abnormal deposition is caused, the depth range can ensure that the limiting opening 112 limits the deposition angle of the material, and the situation that the limiting opening 112 is easily blocked by the material due to the overlong depth H2 of the limiting opening 112 can be avoided.

Specifically, as shown in fig. 2, fig. 4, fig. 6 and fig. 8, and with reference to fig. 3, fig. 5, fig. 7 and fig. 9, the guide opening 113 is gradually enlarged from the deposition opening 111 toward the guide opening 113, that is, the opening area of the guide opening 113 is gradually increased from the deposition opening 111 toward the guide opening 113, and with this structure, the material can be guided into the guide opening 113, so that sufficient material can be ensured to enter the limiting opening 112 from the guide opening 113, and the deposition efficiency can be effectively improved.

Alternatively, as shown in fig. 2, 4, 6 and 8, the included angle γ between the second sidewall 150 and the surface of one side of the mask plate 100 is greater than 90 degrees and less than or equal to 150 degrees, for example, the included angle γ between the second sidewall 150 and the surface of one side of the mask plate 100 may be 95 degrees, 100 degrees, 105 degrees, 110 degrees, 115 degrees, 120 degrees, 125 degrees, 130 degrees, 135 degrees, 140 degrees, 145 degrees or 150 degrees, so that the guide port 113 is arranged to be gradually enlarged from the deposition port 111 toward the guide port 113.

Optionally, as shown in fig. 2, 4, 6 and 8, the depth H3 of the guide opening 113 along the first direction X is greater than 0 micron and less than 8 microns, for example, the depth H3 of the guide opening 113 along the first direction X is 0.5 micron, 1 micron, 1.5 micron, 2 microns, 2.5 microns, 3 microns, 3.5 microns, 4 microns, 4.5 microns, 5 microns, 5.5 microns, 6 microns, 6.5 microns, 7 microns or 7.5 microns. Under the arrangement, as the material gradually enters the guide port 113 in the direction close to the deposition port 111, the moving speed of the material is reduced, and if the depth H3 of the guide port 113 is large, the material is easy to block the guide port 113, so that deposition abnormality is caused, the depth range can ensure the guiding effect of the guide port 113, and the situation that the guide port 113 is easy to block by the material due to the overlong depth H3 of the guide port 113 can be avoided.

Referring to fig. 10 in combination with fig. 1 to 9, an embodiment of the present invention further provides a method for manufacturing a display panel, including the following steps:

step B1, providing the mask plate 100 as described above, placing the mask plate 100 on the substrate 200, wherein the substrate 200 is provided with the first layer structure 250, the first layer structure 250 is covered in the avoiding groove 120, the first layer structure 250 and the mask plate 100 are arranged at intervals, and the evaporation openings 110 are arranged corresponding to part of the first layer structure 250;

step B2, using the mask plate 100 as a mask, depositing a material on the first layer structure 250 to obtain a second layer structure 260 disposed on the first layer structure 250, wherein the area of the second layer structure 260 is smaller than the area of the first layer structure 250. In this embodiment, step B2 deposits the material on the first layer structure 250 by evaporating the material from the evaporation source 400, that is, step B2 deposits the material on the first layer structure 250 by evaporation; and during the deposition process, the film thickness monitor 300 is used to monitor the film thickness of the material layer deposited on the first layer structure 250, thereby controlling the film thickness of the second layer structure 260.

Since the manufacturing method of the display panel provided in this embodiment adopts all technical solutions of all the embodiments, all the beneficial effects brought by the technical solutions of the embodiments are also achieved, and are not described in detail herein.

Optionally, in this embodiment, the first layer structure 250 may be a cathode, and the second layer structure 260 may be a common layer for protecting the cathode, when the common layer is manufactured on the cathode by using the mask plate 100, the avoiding groove 120 of the mask plate 100 can avoid the boundary of the cathode, so as to prevent the cathode from being scratched, and avoid the occurrence of poor display panel caused by the generation of conductive debris; in addition, the depth H1 of the avoiding groove 120 is smaller than the thickness of the mask plate 100, that is, the avoiding groove 120 is not completely disposed through the mask plate 100, so the avoiding groove 120 does not change the opening pattern of the evaporation opening 110, and the pattern shape of the common layer is not affected. Of course, the first layer structure 250 and the second layer structure 260 may be other layer structures according to the choice and specific choice of the actual situation, and are not limited herein.

Specifically, as shown in fig. 3, 5, 7 and 9, the substrate 200 is divided into a plurality of regions, such as a red sub-pixel 210, a green sub-pixel 220 and a blue sub-pixel 230, an anode (not shown) and an organic material layer 240 are sequentially stacked on one side of the substrate 200, and the first layer structure 250 is disposed on one side of the organic material layer 240 away from the anode, that is, the display panel manufactured in the embodiment of the present application is an OLED display panel.

Alternatively, as shown in fig. 3, 5, 7 and 9, the bypass wall 130 has a portion which is spaced apart from the side of the first layer structure 250 away from the substrate 200 and overlaps with a portion of the first layer structure 250 in the first direction X, and a width W of the portion of the bypass wall 130 overlapping with the first layer structure 250 in the first direction X is a distance between a boundary of the first layer structure 250 and a boundary of the second layer structure 260, specifically, a width W of the portion of the bypass wall 130 overlapping with the first layer structure 250 in the first direction X is greater than 0 mm and less than 3 mm, for example, a width W of the portion of the bypass wall 130 overlapping with the first layer structure 250 in the first direction X may be 0.25 mm, 0.5 mm, 0.75 mm, 1.25 mm, 1.5 mm, 1.75 mm, 2 mm, 2.25 mm, 2.5 mm or 2.75 mm. With this arrangement, material deposition in the region between the boundary of the first layer structure 250 and the boundary of the second layer structure 260 can be avoided.

Optionally, as shown in fig. 2, 4, 6, and 8, a depth of the avoiding groove 120 in the first direction X is greater than or equal to a thickness of the second layer structure 260, specifically, the depth of the avoiding groove 120 in the first direction X is greater than 60 nm and less than 100 nm, for example, the depth of the avoiding groove 120 in the first direction X may be 65 nm, 70 nm, 75 nm, 80 nm, 85 nm, 90 nm, or 95 nm. With this arrangement, material deposition in the region between the boundary of the first layer structure 250 and the boundary of the second layer structure 260 can be prevented.

The mask plate 100 and the method for manufacturing the display panel provided by the embodiment of the present application are described in detail above, and the principle and the embodiment of the present application are explained in the present application by applying specific examples, and the description of the above embodiments is only used to help understanding the method and the core concept of the present application; meanwhile, for those skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.