Mask and manufacturing method thereof, and manufacturing method of two-dimensional material film pattern
阅读说明：本技术 一种掩膜及其制造方法、二维材料薄膜图案制造方法 (Mask and manufacturing method thereof, and manufacturing method of two-dimensional material film pattern ) 是由 郝镇齐 高志廷 冀豫 张金松 王亚愚 于 2020-05-12 设计创作，主要内容包括：本发明公开了一种掩膜,所述掩膜包括包括不透光的硅基材以及形成在该硅基材上表面的第一透光层,所述硅基材具有贯穿厚度形成的槽；所述第一透光层采用可透射可见光的材料制成,其对应所述槽顶面的区域形成与所述薄膜图案的形状尺寸相同的镂空图案。本发明进一步还公开了所述掩膜的制造方法以及采用该掩膜制造二维材料薄膜图案的方法。本发明解决了二维材料反光性差在光镜下不易寻找的难题,方便在微结构下寻找薄膜材料并且可以精密定位。同时,所述掩膜制造工艺简单,使用寿命长。(The invention discloses a mask, which comprises an opaque silicon substrate and a first light-transmitting layer formed on the upper surface of the silicon substrate, wherein the silicon substrate is provided with a groove formed through the thickness; the first light-transmitting layer is made of a material capable of transmitting visible light, and hollow patterns with the same shape and size as the thin film patterns are formed in the area corresponding to the groove top surfaces. The invention further discloses a manufacturing method of the mask and a method for manufacturing a two-dimensional material film pattern by adopting the mask. The invention solves the problem that the two-dimensional material has poor reflectivity and is not easy to find under a light mirror, is convenient to find the film material under the microstructure and can be precisely positioned. Meanwhile, the mask is simple in manufacturing process and long in service life.)
1. A mask is used for forming a plurality of film patterns on a substrate and is characterized by comprising an opaque silicon substrate and a first light-transmitting layer formed on the upper surface of the silicon substrate, wherein the silicon substrate is provided with a groove formed through the thickness; the first light-transmitting layer is made of a material capable of transmitting visible light, and hollow patterns with the same shape and size as the thin film patterns are formed in the area corresponding to the groove top surfaces.
2. The mask of claim 1, wherein the first light-transmitting layer is made of a silicon nitride material and has a thickness of 100nm to 500 nm.
3. The mask of claim 1, further comprising a second light transmitting layer formed on the lower surface of the silicon substrate.
4. The mask of any one of claims 1 to 3, wherein the light transmitting layer is formed on the surface of the silicon substrate by PVD or PECVD.
5. The mask of claim 1, wherein the region further comprises a plurality of circular holes formed at the periphery of the hollow pattern.
6. A mask for forming a plurality of thin film patterns on a substrate, the thin film patterns including a conductive film structure and a lead structure, the mask comprising a first mask for forming the conductive film structure on the substrate and a second mask for forming the lead structure on the substrate, the first and second masks each comprising an opaque silicon substrate having a groove formed through its thickness and a light-transmitting layer formed on an upper surface of the silicon substrate; the euphotic layer is made of a material capable of transmitting visible light, a hollowed pattern with the same shape and size as the conducting film structure is formed in the region, corresponding to the groove top surface, of the euphotic layer of the first mask, and a hollowed pattern with the same shape and size as the lead structure is formed in the region, corresponding to the groove top surface, of the euphotic layer of the second mask.
7. The mask of claim 6, wherein the transparent layer is made of a silicon nitride material and has a thickness of 100-500 nm.
8. The mask according to claim 6, wherein the region of the light-transmitting layer of the first mask corresponding to the top surface of the trench further comprises a plurality of round holes formed at the periphery of the hollow pattern.
9. A method of manufacturing a mask for forming a plurality of thin film patterns on a substrate, comprising:
forming light-transmitting material layers on the upper and lower surfaces of a light-tight silicon substrate respectively;
etching the light-transmitting material layer on the lower surface of the silicon substrate to form a corrosion groove pattern;
etching the light-transmitting material layer on the upper surface of the silicon substrate to form a hollow microstructure with the same shape and size as the thin film pattern; and
and etching the silicon substrate corresponding to the etching groove pattern in the through thickness direction to form an etching groove.
10. A thin film pattern forming method for forming a plurality of thin film patterns on a substrate by using an evaporation or etching process, the thin film patterns including a conductive film structure and a lead structure, the method comprising:
forming a conductive film structure of the thin film pattern on the substrate by using a first mask having a first hollow pattern; and
forming a lead structure of the thin film pattern on the substrate by using a second mask with a second hollow pattern;
the first mask and the second mask respectively comprise an opaque silicon substrate and a light-transmitting layer formed on the upper surface of the silicon substrate, and the silicon substrates are provided with grooves formed through the thickness; the light transmitting layer is made of a material capable of transmitting visible light, a first hollow pattern with the same shape and size as the conducting film structure is formed in the area, corresponding to the groove top surface, of the light transmitting layer of the first mask, and a second hollow pattern with the same shape and size as the lead structure is formed in the area, corresponding to the groove top surface, of the light transmitting layer of the second mask.
Technical Field
The invention relates to the technical field of microstructure manufacturing, in particular to a hollow transparent mask for a two-dimensional film material, a manufacturing method of the hollow transparent mask and a method for forming a film pattern on the two-dimensional material by adopting the mask.
Background
The two-dimensional material refers to a material with electrons capable of freely moving only on a nanometer scale (0.3-100nm) with two dimensions, such as a nanometer film, a superlattice, a quantum well and the like.
The circuit is directly prepared on the two-dimensional material by adopting the hollow mask under the vacuum condition, so that the problems of developing solution corrosion and residual photoresist on the surface of the film can be avoided. However, this places very high demands on the stencil mask.
The micron company adopts a stainless steel metal mask hollow plate to prepare the microcircuit conducting film. However, the size limit of the stainless steel metal mask hollow plate is 20 micrometers, and the stainless steel metal mask hollow plate is difficult to apply to a two-dimensional film material with the size of about 10 micrometers in the X, Y direction and 0.3-10 nm in the Z direction.
Patent document 1 discloses a mask preparation method in which a front fine surface is prepared by deep silicon etching, the thickness of the fine surface is 10 μ, and evaporated radicals hardly pass through a 10 μm deep groove in a case where a fine structure has a width of 1 μm at the time of multilayer evaporation coating. However, the mask causes a problem of misalignment of the multi-layered thin films when evaporating the multi-layered thin films.
Patent document 2 uses the first inorganic film as a mask to etch Si, and the selectivity ratio is 1:1000, and the prepared structure also retains a part of the Si matrix. Similarly, the same defect as that of patent document 1 occurs in the evaporation coating film with this structure.
Meanwhile, the thickness of the two-dimensional film material in the Z direction is 0.3-10 nm, the light reflectivity is poor, and the two-dimensional film material is difficult to find through the microstructure under a light mirror along with the reduction of the image area of the fine structure of the mask. And because the two mask structure precise areas reserve lighttight Si base materials, the difficulty of aligning the subsequent Si base mask and the two-dimensional film material is increased.
Patent document 1: CN209895135U
Patent document 2: CN105261588A
Disclosure of Invention
The invention aims to solve the technical problem that the two-dimensional material is difficult to find and align under a mask plate, and discloses a mask, a manufacturing method thereof and a manufacturing method of a two-dimensional material film pattern.
According to a first aspect of the present invention, a mask for forming a plurality of thin film patterns on a substrate includes a silicon substrate having a groove formed through its thickness, which is opaque, and a first light-transmitting layer formed on an upper surface of the silicon substrate; the first light-transmitting layer is made of a material capable of transmitting visible light, and hollow patterns with the same shape and size as the thin film patterns are formed in the area corresponding to the groove top surfaces.
In another embodiment of this aspect, the first light-transmitting layer is made of a silicon nitride material and has a thickness of 100 to 500 nm. Preferably, the thickness is 250 to 330nm, and more preferably, the thickness is 300 nm.
In further embodiments of this aspect, the substrate further comprises a second light transmitting layer formed on the lower surface of the silicon substrate.
In further embodiments of this aspect, the light transmissive layer is formed on the surface of the silicon substrate using PVD or PECVD.
In further embodiments of this aspect, the region further comprises a plurality of holes formed at the periphery of the hollowed-out pattern. Optionally, the holes are circular holes.
In further embodiments of this aspect, the groove is a trapezoidal groove; optionally, the side surfaces of the trapezoidal groove are at an angle of about 50 ° to about 60 ° to the lower surface of the silicon substrate.
Optionally, the thickness of the silicon substrate is 80-300 μm.
According to a second aspect of the present invention, a mask for forming a plurality of thin film patterns on a substrate, the thin film patterns including a conductive film structure and a lead structure, the mask comprising a first mask for forming the conductive film structure on the substrate and a second mask for forming the lead structure on the substrate, the first mask and the second mask each comprising an opaque silicon substrate having a groove formed through a thickness thereof and a light-transmitting layer formed on an upper surface of the silicon substrate; the euphotic layer is made of a material capable of transmitting visible light, a hollowed pattern with the same shape and size as the conducting film structure is formed in the region, corresponding to the groove top surface, of the euphotic layer of the first mask, and a hollowed pattern with the same shape and size as the lead structure is formed in the region, corresponding to the groove top surface, of the euphotic layer of the second mask.
In another embodiment of this aspect, the light-transmitting layer is made of a silicon nitride material and has a thickness of 100 to 500 nm.
In another embodiment of this aspect, the region of the light-transmitting layer of the first mask corresponding to the top surface of the groove further includes a plurality of holes formed at the periphery of the hollow pattern.
According to a third aspect of the present invention, a method of manufacturing a mask for forming a plurality of thin film patterns on a substrate, includes:
forming light-transmitting material layers on the upper and lower surfaces of a light-tight silicon substrate respectively;
etching the light-transmitting material layer on the lower surface of the silicon substrate to form a corrosion groove pattern;
etching the light-transmitting material layer on the upper surface of the silicon substrate to form a hollow microstructure with the same shape and size as the thin film pattern; and
and etching the silicon substrate corresponding to the etching groove pattern in the through thickness direction to form an etching groove.
In another embodiment of this aspect, the etching the light-transmissive material layer on the lower surface of the silicon substrate to form the etching groove pattern further includes a step of forming an etching groove pattern on the light-transmissive material on the lower surface of the silicon substrate by photolithography.
In another embodiment of this aspect, the step of etching the light-transmitting material layer on the upper surface of the silicon substrate to form the hollow microstructure having the same shape and size as the thin film pattern further comprises forming a lithographic pattern on the light-transmitting material on the upper surface of the silicon substrate, for example, by using an ultraviolet exposure or an electron beam. The photoetching pattern comprises a photoetching pattern of a hollow microstructure with the same shape and size as the film pattern, or can also comprise a plurality of circular hole patterns formed on the periphery of the hollow microstructure pattern.
According to a fourth aspect of the present invention, a thin film pattern forming method for forming a plurality of thin film patterns on a substrate using an evaporation or etching process, the thin film patterns including a conductive film structure and a lead structure, the method comprising:
forming a conductive film structure of the thin film pattern on the substrate by using a first mask having a first hollow pattern; and
forming a lead structure of the thin film pattern on the substrate by using a second mask with a second hollow pattern;
the first mask and the second mask respectively comprise an opaque silicon substrate and a light-transmitting layer formed on the upper surface of the silicon substrate, and the silicon substrates are provided with grooves formed through the thickness; the light transmitting layer is made of a material capable of transmitting visible light, a first hollow pattern with the same shape and size as the conducting film structure is formed in the area, corresponding to the groove top surface, of the light transmitting layer of the first mask, and a second hollow pattern with the same shape and size as the lead structure is formed in the area, corresponding to the groove top surface, of the light transmitting layer of the second mask.
In the above aspects, the substrate is a two-dimensional material film.
The hollowed-out structure is made of transparent materials, so that the light transmittance of a material layer with the thickness of 200-500 nm on the front surface of the hollowed-out mask is guaranteed, light rays penetrate through the corrosion groove on the back surface and irradiate on the two-dimensional material through the micro-circuit conducting film structure on the front surface, the problem that the two-dimensional material is poor in light reflectivity and not easy to find under a light mirror is solved, the thin film material can be conveniently found under a microstructure, and the thin film material can be precisely positioned.
Meanwhile, after subsequent coating, the transparent material loses the light transmittance, the coated film can be removed by adopting corresponding corrosive liquid, and the mask can be repeatedly used.
The invention generates the light-transmitting corrosion-resistant material on the two sides of the sacrificial layer Si substrate material. And respectively carrying out front and back photoetching patterns on the light-transmitting corrosion-resistant material, namely forming a microcircuit conductive film structure or a conductive film lead pattern on the front, wherein the back pattern is a square corrosion groove pattern, and the front and back photoetching patterns are provided with positioning marks for positioning through holes. And then, etching the light-transmitting corrosion-resistant material on both sides by adopting a dry method, and transferring the pattern of the photoetching layer to the light-transmitting corrosion-resistant material. And finally, corroding the Si substrate of the middle sacrificial layer by adopting a potassium hydroxide solution to prepare the transparent mask hollowed mask plate. Therefore, the mask provided by the invention has the advantages of simple manufacturing process and high microstructure precision.
The invention adopts two hollow masks, namely a microcircuit conductive film hollow mask and a conductive film lead hollow mask. The first mask is used, for example, a vacuum coating mode is adopted, and the preparation of the microcircuit conducting film structure is completed; and finishing the conductive film lead plating by using a second mask. The hollow structures of the first mask and the second mask are conducted, and a complex circuit is prepared together, so that the problem that the hollow top end is broken easily and the yield is low due to uneven stress at the contact sample point of the hollow top end of the hollow board is solved.
Meanwhile, the invention solves the problem that the ratio of the structural size of the point of the hollow top end contact substrate of the conductive film of the microcircuit to the length of the hollow cantilever arm is smaller and smaller.
Drawings
FIG. 1 is a schematic cross-sectional view of a mask according to an embodiment of the present invention;
FIGS. 2(a) - (f) illustrate a mask fabrication process according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a mask structure for a conductive film of a mask according to another embodiment of the present invention;
FIG. 4 is a schematic view of a wire mask structure of a mask according to another embodiment of the present invention;
FIG. 5 is a schematic diagram of a dual mask structure according to another embodiment of the present invention;
FIG. 6 is a schematic view showing a thin film pattern formed using a mask according to another embodiment of the present invention;
fig. 7 shows an example of a microcircuit thin film pattern made using the present invention.
Detailed Description
Hereinafter, a mask, a method for manufacturing the same, and a method for manufacturing a two-dimensional material thin film pattern according to the present invention will be described in detail with reference to the accompanying drawings and examples, but the present invention is not limited to these examples.
Further, it should be noted that in the description using the following drawings, the drawings are schematic, ratios of respective dimensions and the like are different from actual ones, and illustration other than components necessary in the description will be appropriately omitted for easy understanding.
The mask provided by the invention can be used for carrying out coating processes such as Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD) and the like. Meanwhile, the microstructure material of the mask has better strength and can resist plasma bombardment, so the mask can be used as an etching mask under certain process conditions and can be repeatedly used.
Fig. 1 shows a schematic cross-sectional structure of a mask according to a first embodiment of the present invention.
As shown in fig. 1, according to the embodiment of the present invention, the mask is used to form a plurality of thin film patterns on a substrate, especially a two-dimensional material thin film, for example, by using evaporation, etching, and the like. The mask comprises an
Alternatively, the first light-transmitting layer may be made of silicon nitride or SiO2、TiO2The thickness of the material is 100-500 nm. The first light-transmitting
Optionally, the thickness of the silicon substrate is 80-300 μm, and the groove is a trapezoidal groove; optionally, the side surfaces of the trapezoidal groove are at an angle of about 50 ° to about 60 ° to the lower surface of the silicon substrate.
In another embodiment of the present invention, the substrate further includes a second light-transmitting
The light transmitting layer, i.e., the first
In another embodiment of the present invention, the area of the first light-transmitting
Optionally, the holes are circular holes, and further, the circular holes have a size, such as a diameter, that gradually increases radially outward.
In a further embodiment of the invention, the groove is a trapezoidal groove; optionally, the side surfaces of the trapezoidal groove are at an angle of about 50 ° to about 60 ° to the lower surface of the silicon substrate.
Optionally, the thickness of the silicon substrate is 80-300 μm.
Compared with the prior art that inorganic materials or silicon nitride materials are used as masks, the Si substrate is etched to prepare the mask plate, and part of the Si substrate is reserved, the mask pattern is directly prepared by adopting light-transmitting materials, and the silicon substrate corresponding to the mask pattern is hollowed out, so that the technical problem of mask light transmission is solved.
The present invention further provides a method for manufacturing the above mask, the method comprising:
(1) forming light-transmitting material layers on the upper and lower surfaces of a light-tight silicon substrate respectively;
(2) etching the light-transmitting material layer on the lower surface of the silicon substrate to form a corrosion groove pattern;
(3) etching the light-transmitting material layer on the upper surface of the silicon substrate to form a hollow microstructure with the same shape and size as the thin film pattern; and
(4) and etching the silicon substrate corresponding to the etching groove pattern in the through thickness direction to form an etching groove.
In another embodiment of the present invention, the step of etching the light-transmitting material layer on the lower surface of the silicon substrate to form the etching groove pattern further includes a step of forming an etching groove pattern on the light-transmitting material layer on the lower surface of the silicon substrate by photolithography.
In another embodiment of this aspect, the step of etching the light-transmitting material layer on the upper surface of the silicon substrate to form the hollow microstructure having the same shape and size as the thin film pattern further comprises forming a lithographic pattern on the light-transmitting material on the upper surface of the silicon substrate, for example, by using an ultraviolet exposure or an electron beam. The photoetching pattern comprises a photoetching pattern of a hollow microstructure with the same shape and size as the film pattern, or can also comprise a plurality of circular hole patterns formed on the periphery of the hollow microstructure pattern.
FIGS. 2(a) - (f) illustrate a mask fabrication process according to an embodiment of the present invention;
as shown in the figure, the manufacturing method of the mask comprises the following steps:
step 1, growing a light-transmitting material on two sides of a Si substrate.
According to the invention, a light-transmitting and corrosion-resistant material layer is grown on a Si substrate with the thickness of 100-500 nm on both sides by PECVD or PVD, and the material is as shown in a matrix schematic diagram in fig. 2 (a).
The light-transmitting corrosion-resistant material layer can be made of a silicon nitride material, the thickness of the light-transmitting corrosion-resistant material layer is 100-500 nm, and the thickness of the double-sided light-transmitting layers can be the same or different. The thickness of the front surface light-transmitting
Step 2, back photoetching: making a corrosion groove photoetching pattern on the back light-transmitting material;
the step 2 is used for forming a photoetching pattern of an etching groove on the back light-transmitting material layer, and the specific process is as follows:
(1) coating a positive photoresist on the back light-transmitting material layer of the Si substrate;
uniformly coating AZ series positive photoresist 40 on a back light-transmitting material layer of a Si substrate, wherein the photoresist parameters are as follows: firstly, the low speed is 550 to 650rmp for 8 to 10 seconds, and then the high speed is 3000rmp for 40 to 50 seconds.
(2) And manufacturing a corrosion groove photoetching pattern on the back light-transmitting material layer by using a photoetching machine.
Baking the photoresist for 90-100 s at 90-110 ℃, for example, 100 ℃, and then adopting a photoetching machine to match with a mask plate to manufacture a back square frame-shaped corrosion photoetching pattern, wherein the exposure time is 3.8-4 s. Then, developing for 65-70 s in a customized developer. The prepared structure is shown in fig. 2 (b).
Step 3, back etching: etching the back light-transmitting material by adopting a dry etching process to form an etching groove pattern;
after the lithographic pattern is transferred onto the back side light-transmitting material layer, etching is performed using an F-based or Cl-based gas. During etching, partial oxygen can be added to reduce the edge roughness of the etching structure and improve the quality of the subsequent film pattern made by adopting a mask. The prepared structure is shown in fig. 2 (c).
In this step, when an ICP etcher is employed, the verticality of plasma can be increased by applying a lower electrode bias.
Step 4, front side photoetching: manufacturing a microstructure photoetching pattern corresponding to the film pattern on the front-surface light-transmitting material;
optionally, the process parameters for fabricating the lithographic pattern on the front-side light-transmitting material are the same as the process parameters for fabricating the etch trench lithographic pattern on the back-side light-transmitting material in step 2, that is, the process includes the following steps:
(1) coating a positive photoresist on the positive light-transmitting material layer of the Si substrate;
firstly, uniformly coating AZ series positive photoresist 50 on a back light-transmitting material layer of a Si substrate, wherein the photoresist parameters are as follows: firstly, the low speed is 550 to 650rmp for 8 to 10 seconds, and then the high speed is 3000rmp for 40 to 50 seconds.
(2) And manufacturing a microstructure photoetching pattern on the front-surface light-transmitting material layer by using a photoetching machine.
Baking the photoresist for 90-100 s at the temperature of 90-110 ℃, and then adopting a photoetching machine to match with a mask plate to manufacture a microstructure photoetching pattern 51, wherein the exposure time is 3.8-4 s. Then, developing for 65-70 s in a customized developer. The prepared structure is shown in fig. 2 (d).
According to an alternative embodiment of the present invention, the micro-structure corresponding to the film pattern and the lithography pattern 51 of the auxiliary circular hole structure can be formed on the front side light-transmitting material by using an ultraviolet exposure or an electron beam.
Etching the front light-transmitting material to manufacture a microstructure corresponding to the film pattern;
after the lithographic pattern is transferred onto the front side light transmissive material layer, etching is performed using F-based or Cl-based gases, such as one or a combination of CCl4, CF4, and the like. During etching, partial oxygen can be added to reduce the edge roughness of the etching structure and improve the quality of the subsequent film pattern made by adopting a mask. The prepared structure is shown in fig. 2(e), wherein microstructures 52 corresponding to the thin film pattern are formed on the front light-transmitting material layer, and the microstructures include microstructures corresponding to the thin film pattern, such as a thin film circuit, a lead structure, and a sub-circular hole structure disposed on or around the thin film circuit, the lead structure, or the like.
The invention arranges the round hole anti-reflection structure on the micro-structure, namely, designs a plurality of auxiliary corrosion round hole structures on the periphery of the conductive film of the microcircuit, so that the micro-structure cantilever light-transmitting area of the front light-transmitting material layer (such as a silicon nitride material layer) in the mask is enlarged after a silicon substrate corresponding to the micro-structure is removed by a subsequently introduced wet corrosion process, thereby facilitating the accurate alignment of the mask and a two-dimensional material substrate with the side length of about 10 mu m when the mask is used for manufacturing a film pattern.
In addition, the round hole structure disperses the stress of a local area, can reduce the stress concentration around the mask microstructure, improves the mechanical strength of the mask and ensures that the mask is not easy to break.
It will be understood by those skilled in the art that although steps 2-4 are described above in a sequential order, the present invention is not limited to the sequential order of steps 2 and 3 and steps 4 and 5, and steps 4 and 5 may be performed first and then steps 2 and 3 may be performed, or even under certain process conditions, steps 2 and 3 and steps 4 and 5 may be performed in the same process step.
Step 6, wet etching: hollowing out the Si substrate from the back surface to expose the front surface light-transmitting material layer by adopting a wet etching process to form an etching groove;
in this step, optionally, a potassium hydroxide solution with a ratio of potassium hydroxide to distilled water of 1:2 is used to etch the intermediate sacrificial layer Si substrate material.
The reaction principle of wet etching of the Si substrate is as follows:
2KOH+Si+H2O＝K2SiO3+2H2
namely, the silicon simple substance reacts with strong alkali to generate silicate and hydrogen, thereby removing the silicon substrate material.
In the step, the potassium hydroxide etching solution is etched along a crystal orientation direction of the back surface of the Si substrate, an angle of 50-60 degrees is formed between the etching direction and the surface of the Si substrate, and the etching is performed until the front transparent material layer is exposed, so that an inverted trapezoidal etching groove structure as shown in fig. 2(f) is formed, and then the mask hollow board device is obtained.
Preferably, this step is performed at room temperature, whereby stress concentration due to temperature increase can be reduced, so that the microstructure is not easily broken.
In addition, the method can also comprise a cleaning step, wherein the mask device is cleaned by adopting deionized water and inorganic mixed liquid in sequence.
In the cleaning step, if the mask is cleaned and dried by deionized water, the light-transmitting area on the front surface of the mask is thin, and thus the mask may be broken due to the surface tension of water. Therefore, the invention adopts the steps that before water is not volatilized, the mask device is put into the mixed solution of isopropanol and acetone and then dried at room temperature, so that the yield of the mask device can be improved.
Compared with the prior art, the corrosion-resistant transparent material with the thickness of 100-500 nm is used as the microstructure etching material, so that the microstructure with the minimum line width of 100nm can be realized.
Therefore, the microstructure with the width and the thickness of about 1:1 can be prepared, so that the influence of the wall of the microstructure on the atomic group passing through, namely the change of the size of the plated line, caused by the large thickness of the microstructure in the Z direction can be avoided, the plated film can be plated to form the micro line with different materials overlapped, the aim of overlapping multiple layers of evaporation plated films is fulfilled, and the performance of a subsequent three-dimensional device can be guaranteed.
The mask manufactured by the process can be used as a coating film and an etching mask, and the microstructure is transparent and can be repeatedly used as an etching mask plate to always keep a transparent state to etch a preset circuit microstructure.
The front surface and the back surface of the invention can adopt the same MEMS process, and finally adopt wet etching, the process flow is simple, and the processing efficiency is improved by more than 2 times compared with the traditional process.
Referring to fig. 3 to 5, according to another embodiment of the present invention, there is provided a mask for forming a plurality of thin film patterns including a conductive film structure and a lead structure on a substrate, particularly a two-dimensional material substrate, by using an evaporation or etching process.
According to this embodiment of the present invention, the mask includes a first mask 100 for forming the conductive film structure on the substrate and a second mask 200 for forming the lead structure on the substrate.
Each of the first mask 100 and the second mask 200 includes an opaque silicon
The light-transmitting layer is made of a material capable of transmitting visible light, a
A
Optionally, the light-transmitting layer is made of silicon nitride or SiO2、TiO2The thickness of the material is 100-500 nm.
According to another embodiment of the present invention, the region of the light-transmitting layer of the first mask 100 corresponding to the top surface of the groove further includes a plurality of
Compared with the prior art, the invention adopts a double-mask structure, and correspondingly forms a conductive film and a lead structure, overcomes the defect that the conductive film of the microcircuit is easy to break, improves the yield to 80 percent, and prolongs the service life of the mask plate material by 3-5 times.
Referring to fig. 5 and 6, according to a fourth aspect of the present invention, there is also provided a thin film pattern forming method for forming a plurality of thin film patterns on a substrate, particularly a two-dimensional material substrate, using an evaporation or etching process, the thin film patterns including a conductive film structure and a lead structure, the method including:
a step of forming a conductive film structure of the thin film pattern on the substrate using a first mask 100 having a first hollow pattern; and
a step of forming a lead structure of the thin film pattern on the substrate by using a second mask 200 having a second hollow pattern;
the first mask 100 and the second mask 200 each include an opaque silicon substrate having a groove formed through its thickness and a light-transmitting layer formed on an upper surface of the silicon substrate.
The light-transmitting layer is made of a material capable of transmitting visible light, a first hollow pattern with the same shape and size as those of the conductive film structure is formed in a region, corresponding to the top surface of the groove, of the light-transmitting layer of the first mask 100, and a second hollow pattern with the same shape and size as those of the lead structure is formed in a region, corresponding to the top surface of the groove, of the light-transmitting layer of the second mask 200.
As shown in fig. 3 and 5, the front surface of the micro-circuit conductive film structure of the stencil mask 100 includes a top contact substrate point structure (located in the
The substrates described above and in the following of the present invention are two-dimensional thin film materials, i.e. materials in which electrons can move freely only in two dimensions of nanometer scale (0.3-100nm), such as nano-films, superlattices, and quantum wells.
The following is a description of a specific process for fabricating a thin film pattern using the mask provided by the present invention.
The thickness of the two-dimensional film material in the Z direction is only 0.3-10 nm, and the reflectivity is poor, so that the two-dimensional film material is difficult to find through the microstructure under a light mirror along with the reduction of the image area of the mask microstructure.
Aiming at the characteristics of the two-dimensional film material, the mask provided by the invention is adopted, and the following transfer process is provided:
on a substrate transfer table, the prepared transparent Si3Nx film layer of the inverted trapezoidal structure of the first mask stencil was brought into contact with the surface of the two-dimensional film substrate, and the substrate was aligned using the following procedure:
(1) adjusting the focal length and leveling the substrate table by adopting a substrate surface scribing method;
(2) roughly adjusting the alignment substrate to control the alignment precision error between the top end contact substrate point structure and the substrate within 50 μm;
(3) fine-tuning the alignment substrate; so that the alignment precision error between the top contact substrate point structure and the substrate is controlled to be 2-5 μm.
After the alignment is completed, the aligned mask is preferably fixed using a resin paste and a spring press. The adhesive resin glue is used for preventing the mask from generating micro motion relative to the substrate. The spring pressing sheet is used for providing buffering elasticity, so that even under the condition of large vibration and reduced or invalid adhesiveness of the viscous resin, the mask can be prevented from moving relative to the substrate, the coating precision is ensured, and the performances of devices such as quantum devices are improved.
Then, the fixed mask and substrate assembly is placed in an evaporation coating machine, for example, and a Cr/Au microcircuit conductive film or other film structures corresponding to the first mask microstructure are coated;
and then, on a substrate transfer table, contacting the prepared transparent hollowed-out cantilever transparent material film layer with the inverted trapezoidal structure of the second mask hollowed-out plate with a plated metal microcircuit conductive film circuit, so that the error between the lead hollowed-out cantilever structure of the second mask and the first plated microcircuit conductive film suspension arm structure is controlled within 10 micrometers. The step of aligning the substrate is the same as the above-described steps (1) to (3), and the mask for alignment may be fixed by using the above-described resin paste and the spring preforms.
And then placing the film into an evaporation plating film to plate a Cr/Au microcircuit conductive film lead or other lead film structures corresponding to the second mask microstructure to obtain the required microcircuit conductive film circuit structure, wherein the schematic structure of the twice-plated circuit structure is shown in FIG. 6.
The manufacturing process of the mask provided by the present invention is further described below by using a plurality of embodiments, so that the excellent technical effects of the mask structure and the manufacturing process thereof are more apparent.
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