阅读说明：本技术 一种磁性掺杂超导薄膜及制备方法和超导转变边沿探测器 (Magnetic doped superconducting thin film, preparation method thereof and superconducting transition edge detector ) 是由 高波 陈建国 吕越 黄浩 游天桂 欧欣 王镇 于 2020-04-14 设计创作，主要内容包括：本发明公开了一种磁性掺杂超导薄膜及制备方法和超导转变边沿探测器,涉及低温超导探测器技术领域。本发明通过在衬底上形成预设的宿主薄膜,并在宿主薄膜的深度方向进行非均匀注入磁性离子,在宿主薄膜的深度方向上形成共存的磁性掺杂区和非掺杂区,得到磁性掺杂超导薄膜。本发明采用非均匀的离子注入方式,能够有效抑制宿主薄膜的超导特性,起到调控宿主薄膜的临界温度的目的。相对于现有技术,本发明在达到相同的临界温度调控的同时,还可以获得更低的电阻率；由于该磁性掺杂超导薄膜具有较高的稳定性,能够使超导转变边沿探测器的制备和性能避免因双层膜不稳定性带来的影响,能够极大地提高超导转变边沿探测器制备过程中和使用性能的稳定性。(The invention discloses a magnetic doped superconducting film, a preparation method thereof and a superconducting transition edge detector, and relates to the technical field of low-temperature superconducting detectors. The invention forms a preset host film on a substrate, and carries out non-uniform injection of magnetic ions in the depth direction of the host film, and forms a magnetic doped region and a non-doped region which coexist in the depth direction of the host film, thus obtaining the magnetic doped superconducting film. The invention adopts a non-uniform ion implantation mode, can effectively inhibit the superconducting characteristic of the host film and achieves the purpose of regulating and controlling the critical temperature of the host film. Compared with the prior art, the method can obtain lower resistivity while achieving the same critical temperature regulation and control; because the magnetic doped superconducting film has higher stability, the preparation and the performance of the superconducting transition edge detector can be prevented from being influenced by the instability of a double-layer film, and the stability of the preparation process and the use performance of the superconducting transition edge detector can be greatly improved.)

1. A preparation method of a magnetic doped superconducting film is characterized by comprising the following steps:

providing a substrate, and forming a preset host film on the substrate;

determining the type of the implanted magnetic ions, the energy of the implanted ions and the dose of the implanted ions according to the preset implantation depth and the host film by adopting a non-uniform ion implantation mode, so that the concentration of the magnetic ions in the preset implantation depth range is consistent;

and according to the sequence of ion energy from high to low, the magnetic ions are implanted along the depth direction of the host film, and a magnetic doped region and a non-doped region which coexist are formed in the depth direction of the host film, so that the magnetic doped superconducting film is obtained.

2. The method of claim 1, wherein in the step of providing a substrate and forming a predetermined host film on the substrate, the host film is formed by magnetron sputtering, electron beam evaporation or atomic layer deposition.

3. The method according to claim 1, wherein in the step of providing a substrate and forming a predetermined host film on the substrate, the host film is made of Al, W, Ti or Mo.

4. The method of claim 1, wherein in the step of providing a substrate and forming a predetermined host film on the substrate, the thickness of the host film is 200 to 500 nm.

5. The method of claim 1, wherein in the step of performing the non-uniform ion implantation to obtain the magnetic ions with a uniform concentration within the predetermined implantation depth range, the type of the implanted magnetic ions, the energy of the implanted magnetic ions, and the dose of the implanted magnetic ions are determined according to the predetermined implantation depth and the host thin film, and the predetermined implantation depth is 1/2 to 1/3 of the thickness of the host thin film.

6. The method of claim 3, wherein in the step of using a non-uniform ion implantation method to determine the type of the implanted magnetic ions, the energy of the implanted ions, and the dose of the implanted ions according to the predetermined implantation depth and the host film, such that the concentration of the magnetic ions is uniform within the predetermined implantation depth range, the magnetic ions are Mn, Fe, or Co.

7. The method according to claim 1, wherein in the step of determining the type of the magnetic ions to be implanted, the energy of the implanted ions, and the dose of the implanted ions according to a predetermined implantation depth and the host film in a non-uniform ion implantation manner such that the concentration of the magnetic ions is uniform within the predetermined implantation depth range, the energy of the implanted ions is determined by using simulation software, and the determination criterion of the ion energy is that the peak of the gaussian distribution of each ion energy is located at the trisection point or the quarteection point of the predetermined implantation depth.

8. The method of claim 7, wherein in the step of determining the type of the magnetic ions to be implanted, the energy of the implanted ions, and the dose of the implanted ions according to the predetermined implantation depth and the host film in a non-uniform ion implantation manner such that the concentration of the magnetic ions is uniform within the predetermined implantation depth range, the dose of the ions is determined by using simulation software, and the determination criterion of the dose of the ions is that the concentration of the magnetic ions is uniform within the predetermined implantation depth range.

9. A magnetically doped superconducting thin film prepared by the method for preparing a magnetically doped superconducting thin film according to any one of claims 1 to 8.

10. A superconducting transition edge detector comprising the magnetically doped superconducting thin film of claim 9.

Technical Field

The invention relates to the technical field of low-temperature superconducting detectors, in particular to a magnetic doped superconducting film, a preparation method thereof and a superconducting transition edge detector.

Background

A superconducting Transition Edge Sensor (TES) is a type of low temperature superconducting thermal detector that uses the steep resistance Transition Edge of a superconducting thin film as its thermometer. The TES detector has the advantages of wide detection frequency spectrum, extremely high sensitivity, extremely low dark count, high energy resolution, high photon counting capacity and the like, and has the highest resolution in a non-dispersive spectrometer in an X-ray waveband. Currently internationally advanced TES detectors have achieved a resolution of 1.6eV in the 5.9KeV energy region. The core element of the TES is a superconducting thin film biased in the transition region from the normal state to the superconducting state, and the high-sensitivity thermometer is used by utilizing the steep resistance-temperature (R-T) relationship in the superconducting transition region.

Film physical parameters such as critical temperature Tc, transition width DeltaT, resistivity rho and the like are directly related to the detection performance of the TES detector, so how to reliably obtain the superconducting film with target physical parameters is the basis and key of the TES detector research. The main way to obtain a target critical temperature Tc is currently a bilayer membrane technology, which is critical temperature regulation by a neighbor effect. However, the controllability and stability of the bilayer film technology are poor, and the stability is often lost due to some random factors in the thin film deposition equipment or the preparation process. Therefore, it is necessary to adopt a new physical property adjustment technique so that a superconducting thin film having target physical property parameters can be stably and reliably obtained.

Disclosure of Invention

The invention aims to provide a magnetic doped superconducting thin film, a preparation method thereof and a superconducting transition edge detector, which are used for overcoming the technical problems in the background technology.

The invention is realized by the following technical scheme:

the invention provides a preparation method of a magnetic doped superconducting film on one hand, which comprises the following steps:

providing a substrate, and forming a preset host film on the substrate;

determining the type of the implanted magnetic ions, the energy of the implanted ions and the dose of the implanted ions according to the preset implantation depth and the host film by adopting a non-uniform ion implantation mode, so that the concentration of the magnetic ions in the preset implantation depth range is consistent;

and according to the sequence of ion energy from high to low, the magnetic ions are implanted along the depth direction of the host film, and a magnetic doped region and a non-doped region which coexist are formed in the depth direction of the host film, so that the magnetic doped superconducting film is obtained.

Further, in the step of providing a substrate and forming a predetermined host thin film on the substrate, the host thin film is formed by magnetron sputtering, electron beam evaporation or atomic layer deposition.

Further, in the step of providing a substrate and forming a predetermined host film on the substrate, the material of the host film is Al, W, Ti or Mo.

Further, in the step of providing a substrate and forming a predetermined host film on the substrate, the thickness of the host film is 200 to 500 nm.

Further, in the step of determining the type of the implanted magnetic ions, the energy of the implanted magnetic ions and the dose of the implanted magnetic ions according to a preset implantation depth and the host thin film in a non-uniform ion implantation mode so that the concentration of the magnetic ions is consistent within the preset implantation depth range, the preset implantation depth is 1/2-1/3 of the thickness of the host thin film.

Further, in the step of determining the type of the implanted magnetic ions, the energy of the implanted magnetic ions and the dose of the implanted magnetic ions according to the preset implantation depth and the host film by adopting a non-uniform ion implantation mode so that the concentration of the magnetic ions is consistent within the preset implantation depth range, the magnetic ions are Mn, Fe or Co.

Further, in the step of determining the type of the implanted magnetic ions, the energy of the implanted magnetic ions and the dose of the implanted magnetic ions according to a preset implantation depth and the host thin film in a non-uniform ion implantation manner so that the concentration of the magnetic ions is consistent within the preset implantation depth range, the energy of the implanted magnetic ions includes a plurality of types, and the energy of the implanted magnetic ions is determined by using simulation software, wherein the determination standard of the ion energy is that the peak value of the gaussian distribution of each ion energy is located at the three-equal-part point or the four-equal-part point of the preset implantation depth.

Further, in the step of determining the type of the implanted magnetic ions, the energy of the implanted magnetic ions and the dose of the implanted magnetic ions according to the preset implantation depth and the host film in a non-uniform ion implantation manner so that the concentration of the magnetic ions is consistent within the preset implantation depth range, the dose of the magnetic ions is determined by using simulation software, and the determination standard of the dose of the magnetic ions is that the concentration of the magnetic ions is consistent within the preset implantation depth range.

The second aspect of the present invention provides a magnetically doped superconducting thin film prepared according to the above method for preparing a magnetically doped superconducting thin film.

A third aspect of the present invention provides a superconducting transition edge detector comprising the above-described magnetically doped superconducting thin film.

The implementation of the invention has the following beneficial effects:

1. according to the magnetic doped superconducting thin film, the preparation method and the superconducting transition edge detector, the host thin film is formed on the substrate, and the magnetic ions are partially injected in the depth direction of the host thin film to form the magnetic doped region and the non-doped region which coexist, so that the superconducting characteristic of the host thin film is inhibited, and the purpose of regulating and controlling the critical temperature of the host thin film is achieved. Compared with the double-layer film technology adopted in the prior art, the preparation method of the magnetic doped superconducting film is simple and controllable, and the film has better stability; moreover, by adopting a non-uniform ion implantation mode, the lower resistivity can be obtained while the same critical temperature regulation is achieved.

2. The magnetic doped superconducting thin film obtained by the non-uniform ion implantation is applied to the preparation and application of the superconducting transition edge detector instead of a double-layer film in the prior art, and the magnetic doped superconducting thin film obtained by the method has better stability, so that the preparation and performance of the superconducting transition edge detector are prevented from being influenced by the instability of the double-layer film, the stability in the preparation process of the superconducting transition edge detector can be greatly improved, and the stability of the service performance is ensured.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions and advantages of the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.

FIG. 1 is a flow chart of a method for preparing a magnetically doped superconducting thin film according to an embodiment of the present invention;

FIG. 2 is a schematic structural diagram of a host film grown on a substrate in an embodiment of the present invention;

FIG. 3 is a simulation of Mn ion concentration as a function of depth in an embodiment of the present invention.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be further described in detail with reference to the following examples. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.