阅读说明：本技术 具有改善的散热的电子模块及其制造 (Electronic module with improved heat dissipation and its manufacture ) 是由 E·菲尔古特 D·K·朴 于 2020-02-18 设计创作，主要内容包括：本发明公开了电子模块(10),其包括：半导体封装(1),包括管芯焊盘(1.1)、半导体管芯(1.2)和包封体(1.3),其中,所述包封体(1.3)包括第一主面和与所述第一主面相对的第二主面,所述管芯焊盘(1.1)包括第一主面和与所述第一主面相对的第二主面,并且所述半导体管芯(1.2)设置在所述管芯焊盘(1.1)的所述第二主面上；绝缘层(2),设置在所述包封体(1.3)的第一主面的至少一部分上和所述管芯焊盘(1.1)的第一主面上,其中,所述绝缘层(2)是电绝缘且导热的；以及散热器(3),设置在所述绝缘层(2)上或所述绝缘层(2)中。(The invention discloses an electronic module (10) comprising: semiconductor package (1) comprising a die pad (1.1), a semiconductor die (1.2) and an encapsulation (1.3), wherein the encapsulation (1.3) comprises a first main face and a second main face opposite to the first main face, the die pad (1.1) comprises a first main face and a second main face opposite to the first main face, and the semiconductor die (1.2) is arranged on the second main face of the die pad (1.1); an insulating layer (2) arranged on at least a portion of the first main face of the encapsulation (1.3) and on the first main face of the die pad (1.1), wherein the insulating layer (2) is electrically insulating and thermally conductive; and a heat sink (3) disposed on the insulating layer (2) or in the insulating layer (2).)

1. An electronic module (10) comprising:

-a semiconductor package (1) comprising a die pad (1.1), a semiconductor die (1.2) and an encapsulation (1.3), wherein the encapsulation (1.3) comprises a first main face and a second main face opposite to the first main face, the die pad (1.1) comprises a first main face and a second main face opposite to the first main face, and the semiconductor die (1.2) is arranged on the second main face of the die pad (1.1);

-an insulating layer (2) provided on at least a portion of the first main face of the encapsulation (1.3) and on the first main face of the die pad (1.1), wherein the insulating layer (2) is electrically insulating and thermally conductive; and

-a heat sink (3) arranged on or in the insulating layer (2), wherein a main face of the heat sink (3) is exposed to the outside.

2. The electronic module (10) of claim 1, wherein

The insulating layer (2) comprises one or more of a resin matrix material, a thermosetting material, an epoxy resin, a silicone resin, a thermal adhesive, a thermal plastic or a Thermal Interface Material (TIM).

3. Electronic module (10) according to claim 1 or 2, wherein

The insulating layer (2) comprises a resin matrix material or a host material filled with a filler material configured to increase the thermal conductivity of the host material.

4. The electronic module (10) of claim 3, wherein

The filler material comprises particles of one or more of SiO, AlO, AlN, or BN.

5. The electronic module (10) of any of the preceding claims, wherein

The heat sink (3) comprises one or more of a metal, ceramic or thermal interface material plate.

6. The electronic module (10) of any of the preceding claims, wherein

The heat sink (3) is formed in a plate shape.

7. The electronic module (10) of claim 6, wherein

The thickness of the plate-shaped heat sink (3) is in the range from 100 [ mu ] m to 5 mm.

8. The electronic module (10) according to any one of claims 1 to 5, wherein

The heat sink (3) is formed by a foil.

9. The electronic module (10) of claim 8, wherein

The thickness of the foil is in the range from 5 μm to 100 μm.

10. The electronic module (10) of any of the preceding claims, wherein

The heat sink (3) is formed of only one homogeneous material.

11. The electronic module (10) of any of claims 1 to 7, wherein

The heat sink (3) is formed of a composite comprising two or more materials.

12. The electronic module (10) of claim 11, wherein

The heat sink (3) comprises a base body and a layer arranged on the base body.

13. The electronic module (10) of any of the preceding claims, wherein

The die pad (1.1) is part of a lead frame.

14. Electronic module (10) according to any of the preceding claims, comprising

One or more other die pads and one or more other semiconductor dies, each of the one or more other semiconductor dies disposed on one of the one or more other die pads.

15. An electronic device (20; 30) comprising:

-a semiconductor package (21; 31) comprising a die pad (21.1; 31.1), a semiconductor die (21.2; 31.2) and an encapsulation (21.5; 31.5), wherein

The encapsulation (21.5; 31.5) comprises a first main face and a second main face opposite to the first main face, and the die pad (21.1; 31.1) comprises a first main face and a second main face opposite to the first main face; and the semiconductor die (1.2) is arranged on the second main face of the die pad (1.1);

-an insulating layer (22; 32) arranged on a first main face of the encapsulation (21.5; 31.5) and on a first main face of the die pad (21.1; 31.1), wherein the insulating layer (22; 32) is electrically insulating and thermally conductive;

-a first heat sink (23; 33) arranged on or in the insulating layer (22; 32); and

-a second heat sink (25; 35) arranged on the insulating layer (22; 32) and the first heat sink (23; 33).

16. A method for manufacturing an electronic module, the method comprising:

-providing a semiconductor package comprising a die pad, a semiconductor die and an encapsulation, wherein

The encapsulant body includes a first major face and a second major face opposite the first major face, the die pad includes a first major face and a second major face opposite the first major face, and the semiconductor die is disposed on the second major face of the die pad;

-applying an insulating layer and a heat spreader onto the first main face of the encapsulation and onto the first main face of the die pad, such that the heat spreader is disposed on or in the insulating layer, wherein the insulating layer is electrically insulating and thermally conductive.

17. The method of claim 16, wherein

Applying the insulating layer and the heat spreader includes molding.

18. The method of claim 17, further comprising

The insulating layer and the heat spreader are applied in a manner that embeds the heat spreader in the insulating layer such that an outer surface of the heat spreader is disposed slightly above an outer surface of the insulating layer.

19. The method of any one of claims 16 to 18, wherein

Two or more electronic modules are manufactured in parallel.

Technical Field

The present disclosure relates to an electronic module, an electronic device, and a method for manufacturing the electronic module.

Background

During operation, an electronic module including a semiconductor die may generate heat, which may have to be dissipated through one or more designated thermal paths. The thermal path may be directed to a top side of the electronic module, wherein a heat sink (e.g., a heat spreader) may be disposed on the top side of the electronic module. It may be desirable to reduce the thermal resistance between the semiconductor die and the heat sink in order to improve the heat dissipation capability of the electronic module.

Disclosure of Invention

A first aspect of the present disclosure relates to an electronic module, comprising: a semiconductor package comprising a die pad, a semiconductor die, and an encapsulant, wherein the encapsulant comprises a first major face and a second major face opposite the first major face, the die pad comprises a first major face and a second major face opposite the first major face, and the semiconductor die is disposed on the second major face of the die pad; an insulating layer disposed on at least a portion of the first major surface of the encapsulant and on the first major surface of the die pad, wherein the insulating layer is electrically insulating and thermally conductive; and a heat spreader disposed on or in the insulating layer such that a main surface of the heat spreader is exposed to the outside.

A second aspect of the present disclosure relates to a method for manufacturing an electronic module, the method comprising: providing a semiconductor package comprising a die pad, a semiconductor die, and an encapsulant, wherein the encapsulant comprises a first major face and a second major face opposite the first major face, the die pad comprises a first major face and a second major face opposite the first major face, and the semiconductor die is disposed on the second major face of the die pad; applying an insulating layer and a heat spreader onto the first main face of the encapsulation and onto the first main face of the die pad such that the heat spreader is disposed on or in the insulating layer, wherein the insulating layer is electrically insulating and thermally conductive.

A third aspect of the present disclosure relates to an electronic device, comprising: a semiconductor package comprising a die pad, a semiconductor die, and an encapsulant, wherein the encapsulant comprises a first major face and a second major face opposite the first major face, the die pad comprises a first major face and a second major face opposite the first major face, and the semiconductor die is disposed on the second major face of the die pad; an insulating layer disposed on the first major surface of the encapsulant and on the first major surface of the die pad, wherein the insulating layer is electrically insulating and thermally conductive; a first heat spreader disposed on or over the insulating layer; and a second heat spreader disposed on the insulating layer and the first heat spreader.

Drawings

The accompanying drawings are included to provide a further understanding of the embodiments, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments and, together with the description, serve to explain the principles of the embodiments. Other embodiments and many of the intended advantages of embodiments will be readily appreciated as they become better understood by reference to the following detailed description.

The elements of the drawings are not necessarily to scale relative to each other. Like reference numerals designate corresponding similar parts.

Fig. 1 includes fig. 1A and 1B, and shows a schematic cross-sectional side view representation of an example of an electronic module according to the first aspect.

Fig. 2 shows a schematic cross-sectional side view representation of another example of an electronic module comprising three semiconductor dies and mounted on a PCB, wherein an external heat sink is applied to the insulating layer and the heat sink.

Fig. 3 shows a schematic cross-sectional side view representation of another example of an electronic module similar to the example of fig. 2, in which three semiconductor dies are arranged in the same plane.

Fig. 4 includes fig. 4A and 4B, and shows a schematic cross-sectional side view representation (a) and a top view representation (B) of another embodiment of an electronic module including three parallel external leads.

Fig. 5 shows a schematic cross-sectional side view representation of another example of an electronic module, wherein the heat sink comprises a cooling channel with an inlet opening and an outlet opening for a cooling medium.

Fig. 6 includes a schematic cross-sectional side view representation of fig. 6A and 6B and other examples of electronic modules in which a heat spreader includes a substrate and a layer applied to the substrate.

Fig. 7 shows a flow chart of an example of a method of manufacturing an electronic module according to the second aspect.

Fig. 8 includes fig. 8A-8F and illustrates a cross-sectional side view representation of an electronic module at various stages of manufacture according to another example of a method of manufacturing an electronic module.

Detailed Description

In the following detailed description, reference is made to the accompanying drawings which form a part hereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terminology, such as "top," "bottom," "front," "back," "leading," "trailing," etc., is used with reference to the orientation of the figure(s) being described. Because components of embodiments can be positioned in a number of different orientations, the directional terminology is used for purposes of illustration and is in no way limiting. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims.

It should be understood that features of the various exemplary embodiments described herein may be combined with each other, unless specifically noted otherwise.

As used in this specification, the terms "engage," "attach," "connect," "couple," and/or "electrically connect/couple" do not imply that elements or layers must be in direct contact together; intermediate elements or layers may be provided between elements that are "joined," "attached," "connected," "coupled," and/or "electrically connected/coupled," respectively. However, in accordance with the present disclosure, the above terms may also optionally have the special meaning that elements or layers are in direct contact together, i.e., no intervening elements or layers are provided between the elements that are "joined," attached, "" connected, "" coupled, "and/or" electrically connected/coupled.

Furthermore, the term "over" as used herein with respect to a portion, element, or layer of material that is formed or located "over" a surface may be used to indicate that the portion, element, or layer of material is located (e.g., placed, formed, deposited, etc.) as "indirectly" on the implied surface and that one or more additional portions, elements, or layers are disposed between the implied surface and the portion, element, or layer of material. However, the word "on.. above" as used with respect to a portion, element, or layer of material that is formed or located "on" a surface may also optionally have the particular meaning that the portion, element, or layer of material is positioned (e.g., placed, formed, deposited, etc.) to be "directly on" the implied surface, e.g., in direct contact with the implied surface.

A device or semiconductor package containing a semiconductor die is described below. Semiconductor dies may be of different types, may be fabricated by different technologies, and may include, for example, integrated electrical, electro-optical, or electromechanical circuits and/or passive devices. The device may be a power device and the package may be a power package. The semiconductor die may be designed, for example, as a logic integrated circuit, an analog integrated circuit, a mixed signal integrated circuit, a power integrated circuit, a memory circuit, or an integrated passive device. They may include control circuitry, microprocessors or microelectromechanical components. Furthermore, they may be configured as power semiconductor dies, such as power MOSFETs (metal oxide semiconductor field effect transistors), IGBTs (insulated gate bipolar transistors), JFETs (junction gate field effect transistors), power bipolar transistors or power diodes. In particular, it may relate to a semiconductor die having a vertical structure, that is to say that the semiconductor die may be manufactured in such a way that a current may flow in a direction perpendicular to a main face of the semiconductor die. A semiconductor die with a vertical structure may in particular have contact elements on its two main faces, i.e. on its top and bottom sides. In particular, the power semiconductor die may have a vertical structure. For example, the source and gate electrodes of the power MOSFET may be located on one major face, while the drain electrode of the power MOSFET is disposed on the other major face. Furthermore, the electronic modules described below may include integrated circuits to control the integrated circuits of other semiconductor dies, such as the integrated circuits of power semiconductor dies. The semiconductor die may be fabricated based on a particular semiconductor material (e.g., Si, SiC, SiGe, GaAs, GaN, AlGaAs), but may also be fabricated based on any other semiconductor material, and furthermore, the semiconductor die may contain non-semiconductor inorganic and/or organic materials, such as insulators, plastics, or metals.

Various examples of the electronic modules described below may include external contact elements. The external contact elements may represent external terminals of the semiconductor package. They are accessible from outside the package and may therefore allow electrical contact to be made with the semiconductor die(s) from outside the package. Further, the external contact element may be thermally conductive and may act as a heat spreader to dissipate at least a portion of the heat generated by the semiconductor die. The external contact element may be part of a lead frame, in particular a Cu lead frame.

A semiconductor package for an electronic module includes an encapsulant. The encapsulation may be a dielectric material and may be made of any suitable rigid plastic, thermoplastic or thermosetting material or laminate (prepreg) and may be made by moulding. The enclosure may comprise a filler material. The encapsulant may be only partially hardened after its deposition, and may be fully hardened after application of energy (e.g., heat, UV light, etc.) to form the encapsulant. The encapsulation may be applied using various techniques, such as transfer molding, compression molding, injection molding, powder molding, liquid molding, dispensing, lamination, or dome packaging.

Detailed Description

Fig. 1 comprises fig. 1A and 1B and shows an electronic module according to the first aspect in a schematic side view representation (a) and a top view representation (B). The electronic module 10 of fig. 1 comprises: a semiconductor package 1, the semiconductor package 1 comprising a die pad 1.1, a semiconductor die 1.2 and an encapsulation 1.3, wherein the encapsulation 1.3 comprises a first main face and a second main face opposite to the first main face, the die pad 1.1 comprises a first main face and a second main face opposite to the first main face, and the semiconductor die 1.2 is arranged on the second main face of the die pad 1.1; an insulating layer 2 arranged on a first main face of the encapsulation 1.3 and on a first main face of the die pad 1.1, wherein the insulating layer 2 is electrically insulating and thermally conductive; and a heat spreader 3 provided on the insulating layer 2 or in the insulating layer 2 such that a principal surface of the heat spreader 3 is exposed to the outside.

The electronic module 10 of fig. 1 may also include external leads, which are not shown for clarity. The external leads may have different forms, which will be shown in other examples later.

According to an example of the electronic module of the first aspect, the insulating layer 2 comprises one or more of a resin matrix material, a thermosetting material, an epoxy resin, a silicone resin, a thermal adhesive, a thermal plastic or a Thermal Interface Material (TIM). Additionally, any such kind of host material may be filled with a filler material configured to improve the thermal conductivity of the host material. The filler material may comprise SiO₂、Al₂O₃、AlN、Si₃N₄Particles of one or more of BN or diamond. The insulating layer may include>Thermal conductivity of 1W/mK, more specifically>Thermal conductivity of 2W/mK, more specifically>Thermal conductivity of 3W/mK.

According to an example of the electronic module of the first aspect, the heat spreader 3 is formed of only one homogeneous material, in particular a metal such as Cu or Al or a Thermal Interface Material (TIM). The heat spreader 3 may also be formed of a porous layer of conductive adhesive, indium solder, copper paste, phase change material, soft Al, pure Al, CNC material, magnetic iron material, Sn/Ag layer, or any suitable material. In addition, in situations where isolation is important, ceramics may also be used as heat sink 3, so that a double isolation in the form of insulating layer 2 and heat sink 3 seems to be desirable. The heat sink 3 may also comprise pin fins or other cooling structures on its outer surface.

Further, the heat spreader 3 may also be formed of a composite including two or more materials, instead of one homogeneous material. In particular, the heat sink 3 may comprise a substrate and an additional layer provided on the substrate. The substrate or additional layers may comprise one or more of the materials suggested above for the heat spreader. Specific examples thereof will be shown and explained later. In the case of ceramics, different ceramic layers may also be used, or ceramic layers may be used together with layers having another material.

According to an example of the electronic module of the first aspect, the heat sink 3 comprises one or more of a metal, e.g. Cu or Al, a ceramic or a thermal interface material. Further, the heat sink 3 may be formed in a plate shape and may have a square or rectangular shape. The thickness of the plate may be in the range of 100 μm to 5 mm. The heat sink 3 may also comprise a foil, in which case the thickness may be in the range of 5 μm to 100 μm.

According to an example of the electronic module of the first aspect, at least a portion of the first main face of the die pad 1.1 is coplanar with the first main face of the encapsulation 1.3. According to another example thereof, the entire first main face of the die pad 1.1 is coplanar with the first main face of the encapsulation 1.3. The first main face of the encapsulation 1.3 may also contain grooves or other specific surface properties that are not coplanar with the first main face of the die pad 1.1.

According to an example of the electronic module of the first aspect, the heat sink 3 is embedded in the insulating layer 2 such that an outer surface of the heat sink 3 is slightly above an outer surface of the insulating layer 2.

According to an example of the electronic module of the first aspect, the insulating layer 2 comprises a thermal conductivity of >1W/mK, more particularly >2W/mK, more particularly > 3W/mK.

According to an example of the electronic module of the first aspect, the die pad 1.1 is part of a lead frame. One or more other die pads and one or more other semiconductor dies may be provided, each of the other semiconductor dies disposed on one of the one or more other die pads.

Fig. 2 shows a schematic cross-sectional side view representation of another example of an electronic module. The electronic module 20 of fig. 2 comprises a semiconductor package 21, which semiconductor package 21 comprises a lead frame 21.1, a first semiconductor die 21.2, a second semiconductor die 21.3 and a third semiconductor die 21.4. The first to third semiconductor dies 21.2 to 21.4 are arranged on different parts of the lead frame 21.1. The first semiconductor die 21.2 may be, for example, a semiconductor transistor die, such as an IGBT die. The second semiconductor die 21.3 may be, for example, a semiconductor diode die connected in parallel with the first semiconductor die 21.2. For example, the third semiconductor die 21.4 may be a controller die.

The semiconductor package 21 further comprises an encapsulation 21.5, wherein the encapsulation 21.5 comprises a first upper main face and a second lower main face opposite to the first upper main face. The first semiconductor die 21.2 and the second semiconductor die 21.3 are arranged on a first portion of the lead frame 21.1, which is exposed to the outside of the package and is at least partially coplanar with the first upper main face of the encapsulation 21.5. The third semiconductor die 21.4 is arranged on a further portion of the leadframe, which is not exposed to the outside and is completely embedded within the encapsulation 21.5.

The semiconductor package 21 further comprises an insulating layer 22, which insulating layer 22 is arranged on the first main face of the encapsulation 21.5 and on the first main face of the die pad 21.1, wherein the insulating layer 22 is electrically insulating and thermally conductive, and a heat sink 23 may be arranged on the insulating layer 22 or in the insulating layer 22. The insulating layer 22 and heat spreader 23 may have the same characteristics and features as the insulating layer 22 and heat spreader 23 of the example of fig. 1. In the example of fig. 2, the heat sink 23 may comprise a foil.

The electronic module 20 may be configured as a dual in-line (DIP) module, which typically comprises a rectangular housing and two parallel rows of electrical connection pins arranged on opposite sides. On the client side, the electronic module 20 may be mounted to a Printed Circuit Board (PCB)24 by means of through holes, and an external heat sink 25 may be arranged on top of the insulating layer 22 and the heat sink 23.

Fig. 3 shows a schematic cross-sectional side view representation of another example of an electronic module. The electronic module 30 of fig. 3 is similar to the electronic module 20 of fig. 2, and therefore the different components of the electronic module 30 will not be described again. The electronic module 30 comprises a semiconductor package 31, the semiconductor package 31 comprising a lead frame 31.1, a first semiconductor die 31.2, a second semiconductor die 31.3 and a third semiconductor die 31.4. The first to third semiconductor dies 31.2 to 31.4 are arranged on different parts of the lead frame 31.1 and they may be similar in function to the first to third semiconductor dies 21.2 to 21.4 of the example of fig. 2.

Although examples employing the present disclosure in a particular type of semiconductor package have been shown and described in fig. 2 and 3, it should be emphasized that the present disclosure can be applied TO almost all types of semiconductor packages, including all types of TO (transistor outline) packages, BGA (ball grid array) packages, leadless packages, SMD (surface mounted device) packages, and the like. It should also be mentioned that a structure such as that shown in fig. 1 can also be built on both sides, i.e. an insulating layer with an embedded heat sink is applied on the other side of the semiconductor package.

The semiconductor package 31 further comprises an encapsulation 31.5, wherein the encapsulation 31.5 comprises a first upper main face and a second lower main face opposite to the first upper main face. In contrast to the semiconductor module 20 of fig. 2, the first to third semiconductor dies 31.2 to 31.4 are arranged on all portions of the leadframe 31.1 which are exposed to the outside of the package 31 and are at least partially coplanar with the first upper main surface of the encapsulation 31.5.

The semiconductor package 31 further comprises an insulating layer 32 arranged on the first main face of the encapsulation 31.5 and on the first main face of the die pad 31.2, wherein the insulating layer 32 is electrically insulating and thermally conductive, and a heat spreader 33 is arranged on the insulating layer 32 or in the insulating layer 32. Another difference from the electronic module 20 of fig. 2 is that the insulating layer 32 and the heat spreader 33 are formed thicker. On the customer side, the electronic module 30 may be through hole mounted to a Printed Circuit Board (PCB)34, and an external heat sink 35 may be arranged on top of the insulating layer 32 and the heat sink 33. In the example of fig. 3, the heat spreader 33 may comprise a plate, in particular a Cu plate.

Fig. 4 includes fig. 4A and 4B and shows a top view representation (a) and a cross-sectional side view representation (B) of another example of an electronic module as an example of a Transistor Outline (TO) package. The electronic IC module 40 of fig. 4 comprises a semiconductor package 41, which semiconductor package 41 comprises a die pad 41.1 (not shown) on which a semiconductor die is arranged. The semiconductor package 41 further comprises three parallel outer leads 41.2, 41.3 and 41.4. The outer leads 41.2 to 41.4 and the die pad 41.1 may be parts of a lead frame. The semiconductor package 41 further comprises an encapsulation 41.5, the shape and properties of which may be the same or similar to the previously described example encapsulants.

The electronic module 40 further comprises an insulating layer 42 and a heat sink 43 embedded in the insulating layer 42. Both the insulating layer 42 and the heat spreader 43 may have similar or identical shapes and characteristics as the insulating layer and heat spreader of the previously described examples.

Fig. 5 shows a schematic cross-sectional side view representation of another example of an electronic module. The electronic module 50 comprises a semiconductor package 51, which semiconductor package 51 comprises a die pad 51.1 supporting a semiconductor die (not shown). The semiconductor package 51 further comprises an encapsulation 51.3, wherein the die pad 51.1 is embedded in the encapsulation 51.3. The semiconductor package 51, the die pad 51.1 and the encapsulation 51.3 may have the same shape and characteristics as the semiconductor package, the die pad and the encapsulation shown and described in the previous examples.

The electronic module 50 further comprises an insulating layer 52 and a heat sink 53 embedded within the insulating layer 52. The radiator 53 comprises a cooling channel 53.1, which cooling channel 53.1 has an inlet opening and an outlet opening for the cooling medium flowing through the cooling channel 53.1. The cooling medium may be a liquid or a gas, and may be, for example, air or water. There may be more than one passage between the inlet opening and the outlet opening, and there may also be more than one inlet opening and more than one outlet opening at the end of one or more passages. The heat sink 53 may be configured such that an external heat sink may be additionally provided on the upper surface of the insulating layer 53. Such an external heat sink would have to be configured such that it contains suitable through holes that would act as channels for cooling the medium entering the inlet opening and exiting the outlet opening.

Fig. 6 includes fig. 6A and 6B and shows two different examples of electronic modules in which the heat spreader includes a substrate and an additional layer applied to the substrate.

Fig. 6A shows an electronic module 60_1 comprising a semiconductor package 61, the semiconductor package 61 comprising a die pad 61.1 supporting a semiconductor die (not shown). The semiconductor package 61 further comprises an encapsulation 61.3, wherein the die pad 61.1 is embedded in the encapsulation 61.3. The semiconductor package 61, the die pad 61.1 and the encapsulation 61.3 may have the same shape and characteristics as the semiconductor package, the die pad and the encapsulation shown and described in the previous examples.

The electronic module 60_1 further includes an insulating layer 62 and a heat sink 63 embedded within the insulating layer 62. The heat sink 63 comprises a substrate 63.1 and an additional layer 63.2 applied to the upper surface of the substrate 63.1. The material of the matrix 63.1 may be any of the materials suggested above for the aforementioned heat sink. The material of the additional layer 63.2 may for example be any kind of Thermal Interface Material (TIM). In particular, the material of the additional layer 63.2 may be selected to improve the heat transfer with an external heat sink to be applied thereto. The electronic module 60_1 can be manufactured such that the additional layer 63.2 is applied to the substrate 63.1 before the moulding of the insulating layer 62.

Fig. 6B shows an electronic module 60_2, which is similar to the electronic module 60_1 of fig. 6A, and therefore the same reference numerals are used for the components. The only difference is that only the substrate 63.1 is embedded in the insulating layer 62, while the additional layer 63.2 is located above the insulating layer 62. The electronic module 60_2 can be manufactured such that the additional layer 63.2 is applied to the substrate 63.1 after the moulding of the insulating layer 62.

Fig. 7 shows a flow chart of an example of a method of manufacturing an electronic module according to the second aspect.

According to fig. 7, the method 70 comprises: providing a semiconductor package comprising a die pad, a semiconductor die and an encapsulation, wherein the encapsulation comprises a first main face and a second main face opposite to the first main face, the die bond comprises a first main face and a second main face opposite to the first main face, and the semiconductor die is arranged on the second main face of the die bond (71); an insulating layer and a heat spreader are applied onto the first major surface of the encapsulation and onto the first major surface of the die pad such that the heat spreader is disposed on or in the insulating layer, wherein the insulating layer is electrically insulating and thermally conductive (72).

According to the example of method 70 of fig. 7, the application of the insulating layer and the heat spreader comprises molding, in particular compression molding. More specifically, the material of the insulating layer may be dispensed in liquid form onto the encapsulant and the upper surface of the die pad, and then the heat spreader may be placed onto the dispensed liquid material of the insulating layer. Thereafter, the assembly may be placed in a compression molding apparatus, and an upper molding tool of the molding apparatus may be pressed down on the liquid material of the insulation layer and the heat spreader. After reaching the end position of the upper mould tool, the liquid material may be solidified and hardened. After the insulating layer has hardened, the assembly can be removed from the molding device. The entire process will be described in more detail below.

Fig. 8 includes fig. 8A-8F and illustrates a cross-sectional side view representation of an electronic module at various stages of manufacture according to another example of a method of manufacturing an electronic module.

Fig. 8A shows a semiconductor package 81 comprising a die pad 81.1, a semiconductor die 81.2 disposed on the die pad 81.1, and an encapsulation in which the die pad 81.1 and the semiconductor die 81.2 are embedded. It should be noted that not only one semiconductor package but also a plurality of semiconductor packages may be provided and processed instead.

Fig. 8B shows the dispensing of liquid material 82.1 by dispenser 82.2. The liquid material will be made to the insulating layer and may in principle be selected from any of the materials suggested above. In the case of compression molding, for example, an epoxy resin that can be cured and hardened after molding may be used. The epoxy resin may contain filler materials, in particular particles, to increase the thermal conductivity of the insulating layer to be produced. Suitable materials for the particles have been suggested above.

Fig. 8C shows a semiconductor package 81 with dispensed liquid material 82.1 and a heat spreader 83 placed over the dispensed liquid material. The heat sink 83 may be, for example, a piece of copper, but any other material suggested above for use in heat sinks may also be used.

Fig. 8D shows the assembly placed in a compression molding apparatus. The molding device includes an upper molding tool 84 and a lower molding tool (not shown). The assembly is placed on the lower mold tool. The upper mold tool 84 includes a recessed portion having a shape and contour corresponding to the shape and contour of the insulating layer and heat spreader to be fabricated. A vacuum of, for example, 1 mbar may be applied. The upper mould tool 84 is moved downwards (see arrow) until the envelope reaches an end pressure. In the end position, the recessed portion of the upper mold tool 84 is completely filled with liquid material and heat sink, relative to the volume of the cavity, the molded volume, and the volume of the heat sink.

Fig. 8E shows the situation after the end position of the upper mould tool 84 has been reached. Thereafter, heat is applied to the insulating layer 82 so that the insulating layer 82 can be cured.

Fig. 8F shows the final product after the insulating layer 82 is cured and the product is removed from the molding apparatus. The electronic module shown in fig. 8 corresponds to the electronic module shown in fig. 1.

Examples of the invention

Hereinafter, an electronic module and a method for manufacturing an electronic module will be described by way of example.

Example 1 is an electronic module, comprising: a semiconductor package comprising a die pad, a semiconductor die, and an encapsulant, wherein the encapsulant comprises a first major face and a second major face opposite the first major face, the die pad comprises a first major face and a second major face opposite the first major face, and the semiconductor die is disposed on the second major face of the die pad; an insulating layer disposed on at least a portion of the first major surface of the encapsulant and on the first major surface of the die pad, wherein the insulating layer is electrically insulating and thermally conductive; and a heat spreader disposed on or in the insulating layer, wherein a main surface of the heat spreader is exposed to the outside.

Example 2 is the electronic module of example 1, wherein the insulating layer comprises one or more of a resin matrix material, a thermoset material, an epoxy, a silicone, a thermal adhesive, a thermal plastic, or a Thermal Interface Material (TIM).

Example 3 is the electronic module of example 1 or 2, wherein the insulating layer includes a resin matrix material or a host material filled with a filler material configured to improve thermal conductivity of the host material.

Example 4 is an electronic module according to example 3, wherein the filler material comprises particles of one or more of SiO, AlO, AlN or BN.

Example 5 is an electronic module according to any of the preceding examples, wherein the heat spreader comprises one or more of a metal, a ceramic, or a plate of thermal interface material.

Example 6 is the electronic module according to any one of the preceding examples, wherein the heat sink is formed in a plate shape.

Example 7 is the electronic module according to example 6, wherein a thickness of the plate-shaped heat sink is in a range of 100 μm to 5 mm.

Example 8 is the electronic module of any one of examples 1 to 5, wherein the heat spreader is formed of foil.

Example 9 is the electronic module of example 8, wherein a thickness of the foil is in a range of 5 μ ι η to 100 μ ι η.

Example 10 is the electronic module of any of the preceding examples, wherein the heat spreader is formed from only one homogeneous material.

Example 11 is the electronic module of any one of examples 1 to 7, wherein the heat spreader is formed from a composite including two or more materials.

Example 12 is an electronic module according to example 11, wherein the heat spreader includes a base and a layer disposed on the base.

Example 13 is the electronic module of any of the preceding examples, wherein the die pad is part of a lead frame.

Example 14 is an electronic module according to any of the preceding examples, comprising one or more other die pads and one or more other semiconductor dies, each of the one or more other semiconductor dies disposed on one of the one or more other die pads.

Example 15 is an example of an electronic module, the electronic module comprising: a semiconductor package comprising a die pad, a semiconductor die, and an encapsulant, wherein the encapsulant comprises a first major face and a second major face opposite the first major face, the die pad comprises a first major face and a second major face opposite the first major face, and the semiconductor die is disposed on the second major face of the die pad; an insulating layer disposed on the first major surface of the encapsulant and on the first major surface of the die pad, wherein the insulating layer is electrically insulating and thermally conductive; a first heat spreader disposed on or in the insulating layer; and a second heat spreader disposed on the insulating layer and the first heat spreader.

Example 16 is an example of a method for manufacturing an electronic module, the method comprising: providing a semiconductor package comprising a die pad, a semiconductor die, and an encapsulant, wherein the encapsulant comprises a first major face and a second major face opposite the first major face, the die pad comprises a first major face and a second major face opposite the first major face, and the semiconductor die is disposed on the second major face of the die pad; applying an insulating layer and a heat spreader onto the first main face of the encapsulation and onto the first main face of the die pad such that the heat spreader is disposed on or in the insulating layer, wherein the insulating layer is electrically insulating and thermally conductive.

Example 17 is the method of example 16, wherein applying the insulating layer and the heat spreader includes molding.

Example 18 is the method of embodiment 17, further comprising applying the insulating layer and the heat spreader in the following manner: the heat spreader is embedded in the insulating layer such that an outer surface of the heat spreader is disposed slightly above the outer surface of the heat spreader.

Example 19 is the method of any one of examples 16 to 18, wherein two or more electronic modules are fabricated in parallel.

In addition, while a particular feature or aspect of an embodiment of the invention may have been disclosed with respect to only one of several implementations, such feature or aspect may be combined with one or more other features or aspects of the other implementations as may be desired and advantageous for any given or particular application. Furthermore, to the extent that the terms "includes," has, "" with, "or other variants thereof are used in either the detailed description or the claims, such terms are intended to be inclusive in a manner similar to the term" comprising. Furthermore, it should be understood that embodiments of the invention may be implemented in discrete circuitry, partially integrated circuitry, or fully integrated circuitry or programming means. Moreover, the term "exemplary" is meant only as an example, and not as optimal or optimal. It will also be appreciated that features and/or elements depicted herein are shown with particular dimensions relative to one another for simplicity and ease of understanding, and that actual dimensions may differ substantially from those shown herein.

Although specific embodiments have been illustrated and described herein, it will be appreciated by those of ordinary skill in the art that a variety of alternate and/or equivalent implementations may be substituted for the specific embodiments shown and described without departing from the scope of the present invention. This application is intended to cover any adaptations or variations of the specific embodiments discussed herein. Therefore, it is intended that this invention be limited only by the claims and the equivalents thereof.