阅读说明：本技术 双面散热功率模块及其双面平行度的控制方法 (Double-sided heat dissipation power module and control method of double-sided parallelism thereof ) 是由 陆熙 于 2020-05-26 设计创作，主要内容包括：本发明涉及电力电子技术领域,公开了一种双面散热功率模块及其双面平行度的控制方法,功率模块包括：第一基板、第二基板、位于第一基板和第二基板之间的芯片,及连接于第一基板或第二基板的功率端子及控制端子,芯片键合实现电气连接,第一基板及第二基板背离芯片的一面分别贴合设有弹性绝缘导热层,两层弹性绝缘导热层背离芯片的一面相互平行。弹性绝缘导热层在机械压力下可以适当变形,从而弥补加工过程中导致的第一基板及第二基板外表面间的相互不平行,从而避免模块表面残余塑封料,也便于控制模板整体厚度；另外,弹性绝缘导热层还能够有效隔绝电压。(The invention relates to the technical field of power electronics, and discloses a double-sided heat dissipation power module and a control method of double-sided parallelism thereof, wherein the power module comprises: the chip bonding realizes electrical connection, and the one side of first base plate and second base plate deviating from the chip is laminated respectively and is equipped with the insulating heat-conducting layer of elasticity, and the one side that two-layer elastic insulation heat-conducting layer deviates from the chip is parallel to each other. The elastic insulating heat conduction layer can be properly deformed under mechanical pressure, so that the mutual non-parallelism between the outer surfaces of the first substrate and the second substrate caused in the processing process is compensated, the residual plastic package material on the surface of the module is avoided, and the whole thickness of the module is conveniently controlled; in addition, the elastic insulating heat conduction layer can also effectively isolate voltage.)

1. Double-sided heat dissipation power module, its characterized in that includes: first base plate (11), second base plate (12), be located chip (2) between first base plate (11) and second base plate (12), and connect in the power terminal and the control terminal of first base plate (11) or second base plate (12), electrical connection is realized in chip (2) bonding, the one side that first base plate (11) and second base plate (12) deviate from chip (2) is laminated respectively and is equipped with elastic insulation heat-conducting layer (4), two-layer elastic insulation heat-conducting layer (4) deviate from the one side of chip (2) and are parallel to each other.

2. The double-sided heat dissipation power module according to claim 1, wherein the filling material is filled in an encapsulating manner, and one side of the two elastic insulating and heat conducting layers (4) facing away from the chip (2) extends out of the outer surface of the filling material.

3. Double-sided heat dissipation power module, its characterized in that includes: first base plate (11), second base plate (12), be located chip (2) between first base plate (11) and second base plate (12), and connect in the power terminal and the control terminal of first base plate (11) or second base plate (12), electrical connection is realized in chip (2) bonding, the one side that first base plate (11) and second base plate (12) deviate from chip (2) is laminated respectively and is equipped with elastic insulation heat-conducting layer (4), two-layer the one side that elastic insulation heat-conducting layer (4) deviate from chip (2) is laminated respectively and is equipped with outer heat-conducting plate (5), two-layer the one side that outer heat-conducting plate (5) deviate from chip (2) is parallel to each other.

4. The double-sided heat sink power module according to claim 3, wherein the filling material encapsulates the filling material, and the side of the two outer heat-conducting plates (5) facing away from the chip (2) extends beyond the outer surface of the filling material.

5. A double-sided heat-dissipating power module according to claim 3, characterized in that the outer thermally conductive plate (5) is a metal or ceramic plate.

6. The double-sided heat dissipation power module according to any one of claims 1 to 5, wherein the elastic insulating and heat conducting layer (4) is an epoxy resin insulating and heat conducting layer.

7. The double-sided heat dissipation power module according to any one of claims 1 to 5, wherein the first substrate (11) is provided with a first circuit layer, and the chip (2) is soldered to a corresponding position of the first circuit layer.

8. The double-sided heat dissipation power module according to claim 7, characterized in that the second substrate (12) is provided with a second circuit layer, in addition with a metal gasket (3), and the chip (2) and/or the first circuit layer are connected with corresponding ports of the second circuit layer through the metal gasket (3).

9. The method for controlling the parallelism of the two sides of the double-sided heat dissipation power module of claim 2 or 8, is characterized by comprising the following steps:

s1: sequentially superposing an elastic insulating heat-conducting layer (4), a first substrate (11), a chip (2) and a second substrate (12), connecting the chip (2) and the second substrate (12) through a metal gasket (3) and/or connecting the first substrate (11) and the second substrate (12), and superposing the elastic insulating heat-conducting layer (4) on the second substrate (12);

s2: the heat conducting layer is placed in a mold and pressed on the upper mold and the lower mold, so that the two elastic insulating heat conducting layers (4) are deformed to the surfaces, away from the chip (2), of the two elastic insulating heat conducting layers and are attached to the mold and parallel to each other;

s3: and filling a filling material, and packaging and filling.

10. The method for controlling the parallelism of the two sides of the double-sided heat dissipation power module of claim 4 or 8, is characterized by comprising the following steps:

s1: sequentially superposing an outer heat-conducting plate (5), an elastic insulating heat-conducting layer (4), a first substrate (11), a chip (2) and a second substrate (12), connecting the chip (2) and the second substrate (12) and/or connecting the first substrate (11) and the second substrate (12) through a metal gasket (3), and sequentially superposing the elastic insulating heat-conducting layer (4) and the outer heat-conducting plate (5) on the second substrate (12);

s2: the heat conducting plate is placed in a mold and pressed on the upper mold and the lower mold, so that the two elastic insulating heat conducting layers (4) deform until the surfaces of the outer heat conducting plates (5) departing from the chip (2) are attached to the mold, and the surfaces of the outer heat conducting plates (5) departing from the chip (2) are parallel to each other;

s3: and filling a filling material, and packaging and filling.

Technical Field

The invention relates to the technical field of power electronics, in particular to a double-sided heat dissipation power module and a control method of double-sided parallelism thereof.

Background

The power semiconductor module is a device which combines a plurality of semiconductor chips according to certain functions and modes and then is encapsulated into a whole, and is mainly applied to a power circuit of a power electronic system. Conventional power semiconductor modules include IGBTs (insulated gate bipolar transistors), power mosfets (field effect transistors), thyristors, power diodes, and the like.

Currently, the structure of an IGBT module is: the lower surface of the chip is connected to a DBC substrate, the DBC substrate attached with the chip is connected with the radiating bottom plate in a crimping or welding mode, and the chip with the metalized upper surface is electrically connected in a bonding mode of a bonding wire. The DBC substrate ensures good heat-conducting property, and meanwhile, the power device and the module bottom plate can be electrically insulated. The upper surface of the chip is covered by silica gel, so that the heat dissipation capability is basically absent, the heat dissipation is only performed by the DBC substrate and the bottom plate on the lower surface of the chip, but the heat dissipation capability of the bottom plate is limited, so that the heat dissipation capability of the whole module is limited, the thermal resistance is high, and the service life of the module is further influenced.

Chinese utility model with grant bulletin number CN209592033U discloses a power semiconductor module and vehicle, this module include power semiconductor chip and connect respectively at the first heat dissipation base plate and the second heat dissipation base plate of this power semiconductor chip both sides, and first heat dissipation base plate and second heat dissipation base plate include first copper sheet layer, second copper sheet layer and are located the resin layer between first copper sheet layer and the second copper sheet layer respectively. The first heat dissipation substrate and the second heat dissipation substrate are arranged on two sides of the power semiconductor chip to achieve heat dissipation on the power semiconductor chip. Among the above-mentioned technical scheme, second heat dissipation base plate and first heat dissipation base plate are the copper-clad resin base plate, and first cortex of copper, second cortex of copper and resin layer are one wholly promptly, have replaced original base plate promptly, consequently, in its course of working, can't guarantee the roughness of its both sides, are difficult to guarantee the module about parallel, lead to encapsulating the back module surface to have remaining plastic envelope material, also difficult control the whole thickness of module simultaneously.

Disclosure of Invention

In view of the shortcomings of the prior art, one of the objectives of the present invention is to provide a double-sided heat dissipation power module, which can improve the parallelism and the overall thickness of the double sides of the power module while improving the heat dissipation performance.

The invention provides a double-sided heat dissipation power module, comprising: the chip bonding device comprises a first substrate, a second substrate, a chip located between the first substrate and the second substrate, and a power terminal and a control terminal connected to the first substrate or the second substrate, wherein the chip is bonded to realize electrical connection, one side of the first substrate and the side of the second substrate, which are deviated from the chip, are respectively provided with an elastic insulation heat conduction layer in a laminating mode, and the other side of the first substrate and the side of the second substrate, which are deviated from the chip, are parallel to each other.

By adopting the technical scheme, the elastic insulating heat-conducting layer can be properly deformed under mechanical pressure, so that the mutual non-parallelism between the outer surfaces of the first substrate and the second substrate caused in the processing process is compensated, the residual plastic package material on the surface of the module is avoided, and the whole thickness of the module is conveniently controlled; in addition, the elastic insulating heat conduction layer can also effectively isolate voltage.

The present invention in a preferred example may be further configured to: and the surface of the two elastic insulating heat conduction layers, which is far away from the chip, extends out of the outer surface of the filling material.

By adopting the technical scheme, the thickness of the module is reduced, and the heat dissipation performance is improved.

The invention provides a double-sided heat dissipation power module, comprising: first base plate, second base plate, be located the chip between first base plate and the second base plate, and connect in the power terminal and the control terminal of first base plate or second base plate, electrical connection is realized in the chip bonding, the one side that first base plate and second base plate deviate from the chip is laminated respectively and is equipped with the elastic insulation heat-conducting layer, and is two-layer the one side that the elastic insulation heat-conducting layer deviates from the chip is laminated respectively and is equipped with outer heat-conducting plate, and is two-layer the one side that outer heat-conducting plate deviates from the chip is parallel to each other.

By adopting the technical scheme, the elastic insulating heat-conducting layer can be properly deformed under mechanical pressure, so that the mutual nonparallel between the outer surfaces of the first substrate and the second substrate caused in the processing process is compensated, the residual plastic package material on the surface of the outer heat-conducting layer is avoided, and the whole thickness of the template is conveniently controlled; in addition, the elastic insulating heat conduction layer can effectively isolate voltage, and the outer heat conduction plate can improve heat dispersion.

The present invention in a preferred example may be further configured to: and the outer surface of the filling material is extended from one surface of the two outer-layer heat-conducting plates, which is deviated from the chip, through the filling material in a packaging manner.

By adopting the technical scheme, the thickness of the module is reduced, and the heat dissipation performance is improved.

The present invention in a preferred example may be further configured to: the outer heat conducting plate is a metal plate or a ceramic plate.

By adopting the technical scheme, the heat dissipation performance of the whole module is improved.

The present invention in a preferred example may be further configured to: the elastic insulating heat conduction layer is an epoxy resin insulating heat conduction layer.

The present invention in a preferred example may be further configured to: the first substrate is provided with a first circuit layer, and the chip is welded at a position corresponding to the first circuit layer.

Through adopting above-mentioned technical scheme, realized the electric connection of chip and first base plate.

The present invention in a preferred example may be further configured to: the second substrate is provided with a second circuit layer and a metal gasket, and the chip and/or the first circuit layer are connected with corresponding ports of the second circuit layer through the metal gasket.

By adopting the technical scheme, the electrical connection between the chip and the second substrate and between the first substrate and the second substrate is realized, and the bonding stability is improved.

The second purpose of the present invention is to provide a method for controlling the parallelism of both sides of a double-sided heat dissipation power module, which can improve the parallelism of both sides and the overall thickness of the power module while improving the heat dissipation performance.

The invention provides a method for controlling the parallelism of two surfaces of a double-surface heat dissipation power module, which comprises the following steps:

s1: sequentially superposing the elastic insulating heat-conducting layer, the first substrate, the chip and the second substrate, connecting the chip and the second substrate and/or connecting the first substrate and the second substrate through the metal gasket, and superposing the elastic insulating heat-conducting layer on the second substrate;

s2: placing the heat conducting layer on a die and pressing the upper die and the lower die to enable the two elastic heat conducting layers to deform until the surfaces of the two elastic heat conducting layers, which are far away from the chip, are attached to the die and are parallel to each other;

s3: and filling a filling material, and packaging and filling.

By adopting the technical scheme, the elastic insulating heat-conducting layer can be properly deformed under mechanical pressure, so that the mutual non-parallelism between the outer surfaces of the first substrate and the second substrate caused in the processing process is compensated, the residual plastic package material on the surface of the module is avoided, and the whole thickness of the module is conveniently controlled; in addition, the elastic insulating heat conduction layer can also effectively isolate voltage.

The invention provides a method for controlling the parallelism of two surfaces of a double-surface heat dissipation power module, which comprises the following steps:

s1: sequentially overlapping the outer heat-conducting plate, the elastic insulating heat-conducting layer, the first substrate, the chip and the second substrate, connecting the chip and the second substrate and/or connecting the first substrate and the second substrate through the metal gasket, and sequentially overlapping the elastic insulating heat-conducting layer and the outer heat-conducting plate on the second substrate;

s2: placing the heat-conducting plate in a mold and pressing the upper mold and the lower mold, so that the two elastic heat-conducting layers deform until the surfaces of the outer heat-conducting plates, which are far away from the chip, are attached to the mold, and the surfaces of the outer heat-conducting plates, which are far away from the chip, are parallel to each other;

s3: and filling a filling material, and packaging and filling.

By adopting the technical scheme, the elastic insulating heat-conducting layer can be properly deformed under mechanical pressure, so that the mutual nonparallel between the outer surfaces of the first substrate and the second substrate caused in the processing process is compensated, the residual plastic package material on the surface of the outer heat-conducting layer is avoided, and the whole thickness of the template is conveniently controlled; in addition, the elastic insulating heat conduction layer can effectively isolate voltage, and the outer heat conduction plate can improve heat dispersion.

In summary, the double-sided heat dissipation power module and the control method for the double-sided parallelism thereof provided by the invention have at least one of the following beneficial technical effects:

through the insulating heat-conducting layer of elasticity can suitably warp under mechanical pressure to compensate the mutual nonparallel between first base plate and the second base plate surface that leads to in the course of working, thereby avoid the remaining plastic envelope material in module surface, the whole thickness of control template of also being convenient for.

Drawings

Fig. 1 is a schematic structural diagram of a double-sided heat dissipation power module according to embodiment 1 of the present invention;

fig. 2 is a schematic layer structure diagram of a double-sided heat dissipation power module according to embodiment 1 of the present invention;

fig. 3 is a schematic structural diagram of a double-sided heat dissipation power module according to embodiment 2 of the present invention;

fig. 4 is a schematic layer structure diagram of a double-sided heat dissipation power module according to embodiment 2 of the present invention.

In the figure, 11, a first substrate; 12. a second substrate; 2. a chip; 3. a metal gasket; 4. an elastic insulating heat conducting layer; 5. an outer heat conducting plate.

Detailed Description

The present invention will be described in further detail with reference to the accompanying drawings.