阅读说明：本技术 半导体装置、电力转换装置及半导体装置的制造方法 (Semiconductor device, power conversion device, and method for manufacturing semiconductor device ) 是由 西村太宏 于 2019-08-30 设计创作，主要内容包括：提供抑制了端子间的位置偏移的产生且可靠性高的半导体装置、电力转换装置及半导体装置的制造方法。半导体装置具备半导体元件(1)、壳体、壳体侧端子。在元件侧端子(3)处与壳体侧端子接触的第1部分沿侧壁延伸。第1部分包含凸部(3d)。在壳体侧端子处与元件侧端子接触的第2部分沿侧壁延伸。第2部分包含与凸部接触的凹部。凸部包含与顶面(3h)相连的第1端面(3f)、与顶面相连的第2端面(3g)。凹部包含与底面相连且与凸部的第1端面接触的第1侧面、与底面相连且与凸部的第2端面接触的第2侧面。从侧壁侧观察,第1端面(3f)及第1侧面向第1方向倾斜,第2端面(3g)及第2侧面向与第1方向交叉的第2方向倾斜。(Provided are a highly reliable semiconductor device, a power conversion device, and a method for manufacturing the semiconductor device, wherein occurrence of positional deviation between terminals is suppressed. The semiconductor device includes a semiconductor element (1), a case, and a case-side terminal. The 1 st portion that contacts the case-side terminal at the element-side terminal (3) extends along the side wall. The 1 st portion includes a convex portion (3 d). The No. 2 portion contacting with the element side terminal at the case side terminal extends along the side wall. Part 2 contains a recess that contacts the protrusion. The convex portion includes a 1 st end surface (3f) connected to the top surface (3h) and a 2 nd end surface (3g) connected to the top surface. The concave part comprises a 1 st side surface connected with the bottom surface and contacted with the 1 st end surface of the convex part, and a 2 nd side surface connected with the bottom surface and contacted with the 2 nd end surface of the convex part. When viewed from the side wall side, the 1 st end surface (3f) and the 1 st side surface are inclined in the 1 st direction, and the 2 nd end surface (3g) and the 2 nd side surface are inclined in the 2 nd direction intersecting the 1 st direction.)

1. A semiconductor device includes:

a semiconductor element having an element-side terminal;

a case that holds the semiconductor element therein, the case having a side wall; and

a case-side terminal connected to the case,

the element-side terminal and the case-side terminal are located in a region between the side wall and the semiconductor element and are connected to each other,

a 1 st portion that is in contact with the case-side terminal at the element-side terminal extends along the side wall and includes a convex portion,

a 2 nd portion that is in contact with the element-side terminal at the case-side terminal extends along the side wall and includes a concave portion that is in contact with the convex portion,

the convex part comprises a top surface opposite to the side wall, a 1 st end surface connected with the top surface, and a 2 nd end surface connected with the top surface,

the concave part comprises a bottom surface opposite to the top surface of the convex part, a 1 st side surface which is connected with the bottom surface and is contacted with the 1 st end surface of the convex part, and a 2 nd side surface which is connected with the bottom surface and is contacted with the 2 nd end surface of the convex part,

the 1 st end surface and the 1 st side surface extend so as to be inclined in a 1 st direction, and the 2 nd end surface and the 2 nd side surface extend so as to be inclined in a 2 nd direction intersecting the 1 st direction, when viewed from the side wall side.

2. The semiconductor device according to claim 1,

the 1 st end surface and the 2 nd end surface of the convex portion are arranged in a V shape, and the 1 st side surface and the 2 nd side surface of the concave portion are arranged in a V shape, as viewed from the side wall side.

3. The semiconductor device according to claim 1,

the 1 st end surface and the 2 nd end surface of the convex portion are arranged in an inverted V shape, and the 1 st side surface and the 2 nd side surface of the concave portion are arranged in an inverted V shape, as viewed from the side wall side.

4. The semiconductor device according to claim 1,

the element-side terminal includes a 1 st terminal and a 2 nd terminal,

the case-side terminal includes a 3 rd terminal and a 4 th terminal,

the convex portion is formed on the 1 st terminal and the 2 nd terminal,

the recess is formed in the 3 rd terminal and the 4 th terminal,

the convex portion of the 1 st terminal is in contact with the concave portion of the 3 rd terminal,

the convex portion of the 2 nd terminal is in contact with the concave portion of the 4 th terminal,

the convex portion of the 1 st terminal includes the 1 st end surface,

the convex portion of the 2 nd terminal includes the 2 nd end surface,

the recess of the 3 rd terminal includes the 1 st side,

the recess of the 4 th terminal includes the 2 nd side surface.

5. The semiconductor device according to any one of claims 1 to 4,

the case-side terminal includes a connection portion connected to the 2 nd part and connected to the case,

the connecting portion includes a curved portion in a cross section along a surface of a region at the housing where the connecting portion is connected.

6. A method for manufacturing a semiconductor device includes a step of preparing a semiconductor element having an element-side terminal and a case having a side wall,

a case-side terminal is connected to the case,

the element-side terminal includes a 1 st portion that should be in contact with the case-side terminal,

the 1 st part comprises a convex part,

the case-side terminal includes a 2 nd portion opposite to and extending along the sidewall,

said 2 nd part contains a concave part which should be in contact with said convex part,

the convex part comprises a top surface opposite to the side wall, a 1 st end surface connected with the top surface, and a 2 nd end surface connected with the top surface,

the concave part comprises a bottom surface opposite to the top surface of the convex part, a 1 st side surface connected with the bottom surface and supposed to contact with the 1 st end surface of the convex part, and a 2 nd side surface connected with the bottom surface and supposed to contact with the 2 nd end surface of the convex part,

the method further includes a step of disposing the semiconductor element in the case with the convex portion in contact with the concave portion,

in the step of disposing the semiconductor element, the 1 st end face and the 1 st side face extend so as to be inclined in a 1 st direction, and the 2 nd end face and the 2 nd side face extend so as to be inclined in a 2 nd direction intersecting the 1 st direction, as viewed from the side wall side,

the method of manufacturing a semiconductor device further includes a step of fixing the 1 st portion and the 2 nd portion in a state where the convex portion is in contact with the concave portion.

7. A power conversion device is provided with:

a main converter circuit having the semiconductor device according to claim 1, the main converter circuit converting and outputting power inputted thereto; and

a control circuit that outputs a control signal that controls the main conversion circuit to the main conversion circuit.

Technical Field

The invention relates to a semiconductor device, a power conversion device, and a method for manufacturing the semiconductor device.

Background

Conventionally, a semiconductor device in which a semiconductor element is arranged inside a case is known (for example, see japanese patent application laid-open No. 2011-. In japanese patent laid-open publication No. 2011-. Specifically, the welding is performed in a state where the 1 st portion of the element-side terminal extending in the vertical direction along the side wall of the case is in contact with the 2 nd portion of the case-side terminal extending along the side wall of the case.

Further, there is known a technique in which 1 projection is provided on one terminal and a recess is provided on the other terminal stacked on the one terminal at 2 terminals to be joined, and the projections are fitted into the recesses to align the 2 terminals (for example, refer to japanese patent application laid-open No. 2015-119072).

In the semiconductor device disclosed in japanese patent application laid-open publication No. 2011-103367, in order to reliably weld the element-side terminals and the case-side terminals and to improve reliability, it is necessary to reliably bring the 1 st portions of the element-side terminals and the 2 nd portions of the case-side terminals into contact with each other, but there is no particular mention of the positioning of the terminals with each other. Further, the structure disclosed in japanese patent application laid-open No. 2015-119072 is used for positioning between terminals arranged in a stacked manner, and cannot be directly applied to positioning between terminals extending in the vertical direction disclosed in japanese patent application laid-open No. 2011-103367.

Disclosure of Invention

The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a highly reliable semiconductor device, a power conversion device, and a method for manufacturing a semiconductor device, in which occurrence of positional deviation between terminals is suppressed.

The semiconductor device according to the present invention includes a semiconductor element, a case, and a case-side terminal. The semiconductor element has an element-side terminal. The housing holds the semiconductor element therein, and has a side wall. The case-side terminal is connected to the case. The element-side terminals and the case-side terminals are located in the region between the side wall and the semiconductor element and are connected to each other. The 1 st portion contacting the case-side terminal at the element-side terminal extends along the side wall. Part 1 contains a protrusion. The No. 2 portion contacting with the element side terminal at the case side terminal extends along the side wall. Part 2 contains a recess that contacts the protrusion. The convex portion includes a top surface opposite the side wall, a 1 st end surface connected to the top surface, and a 2 nd end surface connected to the top surface. The concave part comprises a bottom surface opposite to the top surface of the convex part, a 1 st side surface which is connected with the bottom surface and is contacted with the 1 st end surface of the convex part, and a 2 nd side surface which is connected with the bottom surface and is contacted with the 2 nd end surface of the convex part. The 1 st end surface and the 1 st side surface extend obliquely in the 1 st direction, and the 2 nd end surface and the 2 nd side surface extend obliquely in the 2 nd direction intersecting the 1 st direction, as viewed from the side wall side.

A method for manufacturing a semiconductor device according to the present invention includes a step of preparing a semiconductor element having an element-side terminal and a case having a side wall. The case-side terminal is connected to the case. The element-side terminal includes the 1 st portion which should be in contact with the case-side terminal. Part 1 contains a protrusion. The case-side terminal includes a 2 nd portion opposite to and extending along the sidewall. Part 2 contains a recess that should be in contact with the protrusion. The convex portion includes a top surface opposite the side wall, a 1 st end surface connected to the top surface, and a 2 nd end surface connected to the top surface. The concave portion includes a bottom surface opposite to the top surface of the convex portion, a 1 st side surface continuous with the bottom surface and to be in contact with a 1 st end surface of the convex portion, and a 2 nd side surface continuous with the bottom surface and to be in contact with a 2 nd end surface of the convex portion. The method for manufacturing a semiconductor device includes a step of disposing a semiconductor element inside the case with the convex portion in contact with the concave portion. In the step of disposing the semiconductor element, the 1 st end face and the 1 st side face extend so as to be inclined in the 1 st direction, and the 2 nd end face and the 2 nd side face extend so as to be inclined in the 2 nd direction intersecting the 1 st direction, as viewed from the side wall side. The method for manufacturing a semiconductor device further includes a step of fixing the 1 st portion and the 2 nd portion in a state where the convex portion is in contact with the concave portion.

The power conversion device according to the present invention includes a main conversion circuit and a control circuit. The main converter circuit includes the semiconductor device, and converts and outputs the input power. The control circuit outputs a control signal for controlling the main conversion circuit to the main conversion circuit.

The above and other objects, features, aspects and advantages of the present invention will become apparent from the following detailed description of the present invention, which is to be read in connection with the accompanying drawings.

Drawings

Fig. 1 is a schematic cross-sectional view of a semiconductor device according to embodiment 1.

Fig. 2 is a schematic view showing an element-side terminal of the semiconductor device of fig. 1.

Fig. 3 is a schematic view showing a case-side terminal of the semiconductor device of fig. 1.

Fig. 4 is an enlarged schematic view of the element-side terminal shown in fig. 2.

Fig. 5 is an enlarged schematic view of the case-side terminal shown in fig. 3.

Fig. 6 is a flowchart for explaining a method for manufacturing a semiconductor device according to embodiment 1.

Fig. 7 is a schematic view showing an element-side terminal of a semiconductor device as a reference example.

Fig. 8 is a schematic view showing a case-side terminal of a semiconductor device as a reference example.

Fig. 9 is a schematic view showing a state in which the case-side terminals and the element-side terminals are shifted in the horizontal direction.

Fig. 10 is a partially schematic sectional view showing a state in which the case-side terminal and the element-side terminal are shifted in the vertical direction.

Fig. 11 is a schematic view showing a state in which the case-side terminals and the element-side terminals are shifted in the vertical direction.

Fig. 12 is a schematic view showing an element-side terminal of the semiconductor device according to embodiment 2.

Fig. 13 is a schematic view showing a case-side terminal of the semiconductor device according to embodiment 2.

Fig. 14 is a schematic view showing an element-side terminal of the semiconductor device according to embodiment 3.

Fig. 15 is a schematic view showing a case-side terminal of the semiconductor device according to embodiment 3.

Fig. 16 is an enlarged schematic view of the element-side terminal shown in fig. 14.

Fig. 17 is an enlarged schematic view of the case-side terminal shown in fig. 15.

Fig. 18 is a schematic view showing an element-side terminal of the semiconductor device according to embodiment 4.

Fig. 19 is a schematic view showing a case-side terminal of the semiconductor device according to embodiment 4.

Fig. 20 is a schematic view showing an element-side terminal of the semiconductor device according to embodiment 5.

Fig. 21 is a schematic view showing a case-side terminal of the semiconductor device according to embodiment 5.

Fig. 22 is an enlarged schematic view of the element-side terminal shown in fig. 20.

Fig. 23 is an enlarged schematic view of the case-side terminal shown in fig. 21.

Fig. 24 is a schematic view showing an element-side terminal of the semiconductor device according to embodiment 6.

Fig. 25 is a schematic view showing a case-side terminal of the semiconductor device according to embodiment 6.

Fig. 26 is an enlarged schematic view of the element-side terminal shown in fig. 24.

Fig. 27 is an enlarged schematic view of the case-side terminal shown in fig. 25.

Fig. 28 is a schematic sectional view showing a case-side terminal of the semiconductor device according to embodiment 7.

Fig. 29 is a schematic sectional view of the case-side terminal shown in fig. 28.

Fig. 30 is a schematic view showing an element-side terminal of the semiconductor device according to embodiment 8.

Fig. 31 is a schematic view showing a case-side terminal of the semiconductor device according to embodiment 8.

Fig. 32 is a block diagram showing a configuration of a power conversion system according to embodiment 9.

Detailed Description

An embodiment of the present invention will be described below with reference to the accompanying drawings. In the following drawings, the same reference numerals are given to corresponding parts, and the description thereof will not be repeated.