阅读说明：本技术 半导体装置及其制造方法 (Semiconductor device and method for manufacturing the same ) 是由 本乡悟史 于 2019-02-14 设计创作，主要内容包括：实施方式提供一种能够良好地贴合多个半导体衬底上的材料层的半导体装置及其制造方法。实施方式的半导体装置具备第1半导体衬底、第1绝缘膜、第1金属层、第1电极部、第2半导体衬底、第2绝缘膜、及第2电极部。第1绝缘膜设置在第1半导体衬底的第1面,且形成着第1槽。第1金属层被覆第1槽的内表面。第1电极部设置在第1金属层上并嵌入至第1槽内。第2半导体衬底具有与第1半导体衬底的第1面对向的第2面。第2绝缘膜设置在第2半导体衬底的第2面,与第1绝缘膜贴合,且形成着第2槽。第2电极部嵌入至第2槽内,并与第1电极部连接。第1金属层的端部比第1绝缘膜的表面更向第1半导体衬底侧凹陷。(Embodiments provide a semiconductor device and a method for manufacturing the same, which can satisfactorily adhere material layers on a plurality of semiconductor substrates. The semiconductor device of the embodiment includes a 1 st semiconductor substrate, a 1 st insulating film, a 1 st metal layer, a 1 st electrode portion, a 2 nd semiconductor substrate, a 2 nd insulating film, and a 2 nd electrode portion. The 1 st insulating film is provided on the 1 st surface of the 1 st semiconductor substrate, and has a 1 st trench formed therein. The 1 st metal layer covers the inner surface of the 1 st groove. The 1 st electrode part is arranged on the 1 st metal layer and embedded into the 1 st groove. The 2 nd semiconductor substrate has a 2 nd surface opposed to the 1 st surface of the 1 st semiconductor substrate. The 2 nd insulating film is provided on the 2 nd surface of the 2 nd semiconductor substrate, is bonded to the 1 st insulating film, and forms a 2 nd trench. The 2 nd electrode part is embedded into the 2 nd groove and is connected with the 1 st electrode part. The end of the 1 st metal layer is recessed toward the 1 st semiconductor substrate side from the surface of the 1 st insulating film.)

1. A semiconductor device includes:

a 1 st semiconductor substrate;

a 1 st insulating film provided on a 1 st surface of the 1 st semiconductor substrate and having a 1 st trench formed therein;

a 1 st metal layer covering an inner surface of the 1 st groove;

a 1 st electrode part which is arranged on the 1 st metal layer and is embedded into the 1 st groove;

a 2 nd semiconductor substrate having a 2 nd surface opposed to the 1 st surface of the 1 st semiconductor substrate;

a 2 nd insulating film provided on the 2 nd surface of the 2 nd semiconductor substrate, bonded to the 1 st insulating film, and having a 2 nd trench formed therein; and

a 2 nd electrode part embedded in the 2 nd groove and connected with the 1 st electrode part;

an end portion of the 1 st metal layer is recessed more toward the 1 st semiconductor substrate side than a surface of the 1 st insulating film.

2. The semiconductor device according to claim 1, further comprising a 2 nd metal layer, wherein the 2 nd metal layer is provided between the 2 nd insulating film and the 2 nd electrode portion, and wherein the 2 nd metal layer is provided between the 2 nd insulating film and the 2 nd electrode portion

An end portion of the 2 nd metal layer is recessed more toward the 2 nd semiconductor substrate side than a surface of the 2 nd insulating film.

3. The semiconductor device according to claim 2, wherein a material of the 1 st or 2 nd electrode part is provided between an end of the 1 st metal layer and the 2 nd insulating film or the 2 nd electrode part, and wherein the material of the 1 st or 2 nd electrode part

The material of the 1 st or 2 nd electrode part is provided between the end of the 2 nd metal layer and the 1 st insulating film or the 1 st electrode part.

4. The semiconductor device according to claim 3, wherein the 1 st and 2 nd insulating films include a silicon oxide film,

the 1 st and 2 nd electrode parts comprise copper,

the 1 st and 2 nd metal layers comprise titanium.

5. A method of manufacturing a semiconductor device, comprising the steps of:

forming a 1 st insulating film on a 1 st surface of a 1 st semiconductor substrate;

forming a 1 st groove in the 1 st insulating film;

forming a 1 st metal layer on the inner surface of the 1 st groove;

filling a material of a 1 st electrode part into the 1 st groove;

polishing the 1 st metal layer and the 1 st electrode part until the 1 st insulating film is exposed;

selectively etching the 1 st metal layer so that an end portion of the 1 st metal layer is recessed more toward the 1 st semiconductor substrate side than a surface of the 1 st insulating film;

forming a 2 nd insulating film on a 2 nd surface of the 2 nd semiconductor substrate;

forming a 2 nd trench in the 2 nd insulating film;

forming a 2 nd metal layer on the inner surface of the 2 nd groove;

filling the 2 nd groove with a 2 nd electrode part material;

polishing the 2 nd metal layer and the 2 nd electrode part until the 2 nd insulating film is exposed;

selectively etching the 2 nd metal layer so that an end portion of the 2 nd metal layer is recessed more toward the 2 nd semiconductor substrate side than a surface of the 2 nd insulating film;

bonding the 1 st semiconductor substrate and the 2 nd semiconductor substrate so that the 1 st insulating film and the 2 nd insulating film face each other, thereby connecting the 1 st insulating film and the 2 nd insulating film; and

connecting the 1 st electrode part with the 2 nd electrode part.

6. The method for manufacturing a semiconductor device according to claim 5, wherein the 1 st and 2 nd semiconductor substrates are subjected to heat treatment in the step of connecting the 1 st electrode portion and the 2 nd electrode portion.

7. The method for manufacturing a semiconductor device according to claim 6, wherein a material for the 1 st or 2 nd electrode portion is introduced between the 1 st metal layer and the 2 nd insulating film or the 2 nd electrode portion by heat treatment of the 1 st and 2 nd semiconductor substrates, and wherein the material for the 1 st or 2 nd electrode portion is introduced

And introducing the material of the 1 st or 2 nd electrode part between the 2 nd metal layer and the 1 st insulating film or the 1 st electrode part by heat treatment of the 1 st and 2 nd semiconductor substrates.

8. The method for manufacturing a semiconductor device according to claim 7, wherein the 1 st metal layer protrudes more than the 1 st insulating film and the 1 st electrode when the 1 st metal layer and the 1 st electrode portion are polished until the 1 st insulating film is exposed,

when the 2 nd metal layer and the 2 nd electrode portion are polished until the 2 nd insulating film is exposed, the 2 nd metal layer protrudes more than the 2 nd insulating film and the 2 nd electrode.

9. The method for manufacturing a semiconductor device according to claim 8, wherein the 1 st electrode portion and the 2 nd electrode portion comprise copper formed by electroplating,

the etching of the 1 st metal layer and the 2 nd metal layer uses hydrogen peroxide water.

Technical Field

The present embodiment relates to a semiconductor device and a method for manufacturing the same.

Background

A technique of bonding a plurality of semiconductor substrates to interconnect electrodes and the like formed on the plurality of semiconductor substrates has been developed. However, there are cases where a part of a material layer on a semiconductor substrate protrudes when it is planarized. In this case, when the semiconductor substrates are bonded, a gap may be formed at an interface between the semiconductor substrates, which may cause a connection failure between electrodes or a bonding failure between the semiconductor substrates.

Disclosure of Invention

Drawings

Fig. 1 is a cross-sectional view showing an example of a wiring portion of a semiconductor device according to the present embodiment.

Fig. 2 is a cross-sectional view showing an example of the structure within a dashed-line frame B of fig. 1.

Fig. 3(a), 3(B), 4(a), 4(B), 5(a), 5(B), 6(a), and (B) are cross-sectional views showing an example of a method for manufacturing the device D1 of the 1 st embodiment.

Fig. 7(a) and (B) are enlarged cross-sectional views of a broken-line frame B shown in fig. 6(a) and (B).

Fig. 8(a), 8(B), 8(C), 9(a), 9(B), and 9(C) are diagrams illustrating a bonding process between the 1 st substrate and the 2 nd substrate.

Fig. 10 is a cross-sectional view showing a part of the 1 st and 2 nd apparatuses which are offset on the bonding surface.

Embodiments provide a semiconductor device and a method for manufacturing the same, which can satisfactorily adhere material layers on a plurality of semiconductor substrates.