阅读说明：本技术 可移动掩蔽元件 (Movable masking element ) 是由 拉尔夫·林登贝格 于尔根·格里尔迈尔 岭·灿 约翰·M·怀特 马库斯·哈尼卡 于 2017-06-26 设计创作，主要内容包括：提供了一种沉积设备。沉积设备包括第一沉积源和第二沉积源,经构造为用于在基板接收面积中沉积材料。沉积设备包括掩蔽元件。掩蔽元件经构造为用于掩蔽在第一方向上延伸的基板边缘区域。掩蔽元件经构造以在至少第一方向上移动以补偿沉积材料在掩蔽元件上的积累。(A deposition apparatus is provided. The deposition apparatus includes a first deposition source and a second deposition source configured for depositing material in a substrate receiving area. The deposition apparatus includes a masking element. The masking element is configured for masking an edge region of the substrate extending in the first direction. The masking element is configured to move in at least a first direction to compensate for accumulation of deposition material on the masking element.)

1. A deposition apparatus (100), comprising:

a first deposition source (110) and a second deposition source (120) configured for depositing material in a substrate receiving area; and

a masking element (150) for masking the surface of the substrate,

wherein the masking element is configured for masking a substrate edge region (162) extending in a first direction (102), and

wherein the masking element is configured to move in at least the first direction to compensate for accumulation of deposition material on the masking element.

2. The deposition apparatus of claim 1, wherein the first deposition source is arranged at a first distance (350) from the second deposition source, wherein the masking element is configured to move in the first direction by a second distance (220) to compensate for accumulation of deposition material on the masking element, wherein the second distance is from 30% to 70% of the first distance.

3. The deposition apparatus according to claim 1 or claim 2, further comprising one or more actuators (410) for moving the masking element in at least the first direction.

4. The deposition apparatus according to claim 1 or claim 2, wherein the masking element is an elongated element overlapping an edge of the substrate receiving area extending in the first direction, and wherein the deposition apparatus comprises one or more actuators (410), the one or more actuators (410) being connected to the elongated element for moving the elongated element in at least the first direction.

5. The deposition apparatus according to any of claims 1 to 4, further comprising a control unit for controlling the movement of the masking element in the first direction in dependence on a property of the deposition material deposited on the masking element.

6. The deposition apparatus of any of claims 1 to 5, wherein the first deposition source and the second deposition source extend in a second direction, in particular wherein the second direction is substantially perpendicular to the first direction.

7. The deposition apparatus according to any of claims 1 to 5, wherein the first deposition source and the second deposition source each comprise a rotatable target having an axis of rotation (112, 122) extending in a second direction (104), in particular wherein the second direction is substantially perpendicular to the first direction.

8. The deposition apparatus of claim 6 or claim 7, wherein the masking element is configured to move in at least the second direction to compensate for accumulation of deposition material on the masking element.

9. The deposition apparatus according to any of claims 1 to 8, comprising an array of deposition sources (110, 120, 530, 540, 550, 560) with a pitch (510) between adjacent deposition sources of the array, wherein the masking element is configured to move from a first position (202) to a second position (204), wherein a distance (220) from the first position to the second position in the first direction is from 30% to 70% of the pitch.

10. A deposition method, comprising:

depositing a material on a substrate (160) using a first deposition source (110) and a second deposition source (120), wherein the substrate comprises a substrate edge region (162) extending in a first direction (102);

masking the substrate edge region using a masking element (150) arranged in a first position (202); and

moving the masking element from the first position to a second position (204) to compensate for accumulation of deposition material on the masking element, wherein the second position is a distance (220) from the first position in the first direction.

11. The deposition method of claim 10, wherein the first deposition source is arranged at a first distance (350) from the second deposition source, wherein the masking element is moved in the first direction from the first position to the second position by a second distance (220), wherein the second distance is from 30% to 70% of the first distance.

12. The deposition method of claim 10 or claim 11, wherein the masking element is moved from the first position to the second position to compensate for a deposition profile of material deposited on the masking element, wherein the deposition profile comprises one or more peaks (310, 320) and one or more valleys (330).

13. The deposition method of any of claims 10 to 12, wherein the second position is at a distance (420) from the first position in a second direction (104), in particular wherein the second direction is substantially perpendicular to the first direction.

14. The deposition method of any of claims 10 to 13, further comprising masking at least a portion of the substrate edge area with the masking element disposed in the second position.

15. The deposition method of any of claims 10 to 14, wherein the deposition method is a static deposition method.

Technical Field

Embodiments described herein relate to a deposition apparatus for depositing a material on a substrate, and more particularly, to a deposition apparatus including a masking element for masking an edge region of a substrate.

Background

Several methods are known for depositing materials on a substrate. For example, the substrate may be coated by a Physical Vapor Deposition (PVD) process, a Chemical Vapor Deposition (CVD) process, a Plasma Enhanced Chemical Vapor Deposition (PECVD) process, and the like. Typically, the process is performed in a processing apparatus or processing chamber in which the substrate to be coated is located. A deposition material is provided in the apparatus. In the case of performing a PVD process, for example, the deposited material may be in a vapor phase. A variety of materials may be used for deposition on the substrate. Of these, many different metals may be used, but oxides, nitrides or carbides may also be used. In general, PVD processes are suitable for thin film coatings.

The coated material can be used in several applications and in several technical fields. For example, it is applied in the field of microelectronics, such as the production of semiconductor devices. Furthermore, substrates for displays are often coated by PVD processes. Further applications include insulating panels, Organic Light Emitting Diode (OLED) panels, but also hard disks, CDs, DVDs and the like.

In a coating process, it may be useful to use a mask, for example, in order to better define the area to be coated. In some applications, only portions of the substrate should be coated, and the uncoated portions are covered by a mask. In some applications, such as in large area substrate coating equipment, it is desirable not to coat the edges of the substrate. After the edges are excluded, it is possible to provide uncoated substrate edges and prevent coating the backside of the substrate.

However, since the mask is positioned in front of the substrate, the mask in the material deposition process is also exposed to the deposition material. As a result, deposition material accumulates on the mask surface during processing. This may result in a modified mask shape due to the material deposited on the mask. For example, the perimeter or boundary of the mask aperture may be reduced as the layer of deposited material grows on the mask. Often, a cleaning procedure is performed on the mask to ensure accurate dimensions of the area covered by the mask. This cleaning procedure interrupts the material deposition process and is thus time and cost intensive.

In view of the above, it is an object of the present disclosure to provide a deposition apparatus and a deposition method that overcome at least some of the problems in the art.

Disclosure of Invention

According to an embodiment, a deposition apparatus is provided. The deposition apparatus includes a first deposition source and a second deposition source configured for depositing material in a substrate receiving area. The deposition apparatus includes a masking element. The masking element is configured for masking an edge region of the substrate extending in the first direction. The masking element is configured to move in at least a first direction to compensate for accumulation of deposition material on the masking element.

According to another embodiment, a method of deposition is provided. The deposition method includes depositing a material on a substrate using a first deposition source and a second deposition source. The substrate includes a substrate edge region extending in a first direction. The deposition method includes masking an edge region of the substrate with a masking element disposed in the first position. The deposition method includes moving the masking element from a first position to a second position to compensate for accumulation of deposition material on the masking element, wherein the second position is at a distance from the first position in the first direction.

Drawings

A full and enabling disclosure of the present invention, including the reference to the accompanying figures, directed to one of ordinary skill in the art, is set forth more particularly in the remainder of the specification, in which:

fig. 1a to 1c illustrate a deposition apparatus according to embodiments described herein;

2 a-2 b illustrate masking elements configured to move according to embodiments described herein;

3 a-3 d illustrate masking elements configured to move according to embodiments described herein;

4 a-4 b illustrate masking elements configured to move according to embodiments described herein;

fig. 5a to 5b illustrate a deposition apparatus including a plurality of deposition sources according to embodiments described herein.

Detailed Description

Reference will now be made in detail to the various embodiments, one or more examples of which are illustrated in the figures. In the following description of the drawings, like reference numerals refer to like parts. In general, only the differences with respect to the individual embodiments are described. Each example is provided by way of explanation and is not intended as a limitation. In addition, features illustrated or described as part of one embodiment can be used on or in conjunction with other embodiments to yield yet a further embodiment. The description is intended to embrace such modifications and variations.

As used herein, the term "deposition" may refer more specifically to layer deposition. A layer deposition process or coating process is a process in which a material is deposited on a substrate to form a deposited material layer on the substrate. For example, the layer deposition process may refer to a sputtering process, a Physical Vapor Deposition (PVD) process, a Chemical Vapor Deposition (CVD) process, a Plasma Enhanced Chemical Vapor Deposition (PECVD) process, and the like. The layer deposition process may be performed in a processing chamber, in particular a vacuum processing chamber, in which the substrate to be coated is located.

According to an embodiment, a deposition apparatus is provided. The deposition apparatus includes a first deposition source and a second deposition source configured for depositing material in a substrate receiving area. The deposition apparatus includes a masking element. The masking element is configured for masking an edge region of the substrate extending in the first direction. The masking element is configured to move in at least a first direction to compensate for accumulation of deposition material on the masking element.

Fig. 1a to 1c illustrate a deposition apparatus 100 according to embodiments described herein. The exemplary deposition apparatus 100 shown in fig. 1 a-1 c is used to process a vertically oriented substrate 160. However, embodiments described herein are not limited to vertically oriented substrates, and other orientations of the substrate 160 are also contemplated in accordance with embodiments described herein.

Fig. 1a illustrates a top view of the deposition apparatus 100. The deposition apparatus 100 includes a first deposition source 110 and a second deposition source 120 for coating a substrate 160 in a substrate receiving area. In the embodiment shown in fig. 1a, the first deposition source 110 and the second deposition source 120 each comprise a rotatable target. The first deposition source 110 has a rotation axis 112. The second deposition source 120 has a rotational axis 122. The first deposition source 110 and the second deposition source 120 are not limited to rotatable targets, and other types of deposition sources are also contemplated according to embodiments described herein.

Fig. 1a illustrates a first direction 102. In fig. 1a, the first direction 102 is parallel to the page, as indicated by the double arrow. As shown, the substrate 160 is parallel to the first direction 102.

Fig. 1a illustrates a second direction 104. In fig. 1a, the second direction 104 is perpendicular to the page. As shown, the substrate 160 is parallel to the second direction 104. The rotational axis 112 of the first deposition source 110 and the rotational axis 122 of the second deposition source 120 extend in the second direction 104. In the exemplary embodiment shown in fig. 1a, where the substrate 160 is oriented vertically, the first direction 102 is a horizontal direction and the second direction 104 is a vertical direction.

The deposition apparatus 100 shown in fig. 1a comprises a masking element 150. The masking element 150 is also illustrated in fig. 1b, fig. 1b providing a side view of the deposition apparatus 100. The masking element 150 covers the substrate edge region 162 of the substrate 160 to prevent or reduce material emitted by the first deposition source 110 and/or the second deposition source 120 to be deposited on the substrate edge region 162.

In the side view of fig. 1b, the second direction 104 is parallel to the page and the first direction 102 is perpendicular to the page, as indicated by the double arrow.

Fig. 1c provides a front view of the deposition apparatus 100. For ease of presentation, the first deposition source 110 and the second deposition source 120 of the deposition apparatus 100 are not illustrated in fig. 1 c. As shown in fig. 1c, the substrate edge area 162 extends in the first direction 102. The masking elements 150 extend in the first direction 102.

In the front view of fig. 1c, both the first direction 102 and the second direction 104 are parallel to the page.

According to embodiments described herein, the masking element 150 is configured to move in at least the first direction 102 to compensate for accumulation of deposition material on the masking element 150.

Fig. 2a illustrates the masking element 150 in a first position 202. For example, the masking element 150 may remain in the first position for a certain period of time during a portion of the deposition cycle. Although the masking element 150 is in the first position 202, material is ejected from the first deposition source 110 and the second deposition source 120 (not shown in fig. 2 a) for deposition on the substrate 160. With the masking element 150 in the first position 202, the substrate edge region 162 is masked by the masking element 150.

Since the masking element 150 masks the substrate edge region 162, the deposition material emitted by the first deposition source 110 and the second deposition source 120 accumulates on the masking element 150. The growth of the deposited material on the masking elements 150 affects the effective shape of the masking elements 150. For example, the thickness of the material formed on an edge portion of the masking element 150 may change the effective shape of this edge portion. If the masking elements 150 remain in the first position 202 for a longer period of time, the shape of the areas of the substrate 160 masked by the masking elements 150 will change during the deposition process due to the accumulation of deposition material deposited on the masking elements 150. This may result in non-uniformity of the layer deposited on the substrate 160, for example.

To compensate for the accumulation of deposition material on the masking elements 150, the masking elements 150 are configured to move in the first direction 102 according to embodiments described herein. As shown in fig. 2b, the masking element 150 is moved relative to the substrate 160 from a first position 202 to a second position 204. The second location 204 is a distance 220 from the first location 202 in the first direction 102.

In the exemplary embodiment shown in fig. 2 a-2 b, the movement from the first position 202 to the second position 204 is a lateral movement in the first direction 102, as indicated by arrow 292 in fig. 2 a. The movement of the masking element 150 as shown in fig. 2 a-2 b is a movement parallel to the first direction 102. However, the movement of the masking element 150 may also be in different directions, for example, an angled direction having a component along the first direction 102 and a component along the second direction 104, as long as the second position 204 is offset from the first position 202 in the first direction 102.

Fig. 2b illustrates the masking element 150 in the second position 204. The masking element 150 in the first position 202 is indicated in fig. 2b with a dashed line. The masking element 150 is moved in the first direction 102 from the first position 202 to the second position 204 by a distance 220. As shown in fig. 2b, the masking element 150 in the second position 204 may mask at least a portion of the substrate edge area 162.

The masking element 150 may remain in the second location 204 for a certain period of time, for example, for a portion of a deposition cycle. Although the masking element 150 is in the second position 204, material is ejected from the first deposition source 110 and the second deposition source 120 (not shown in fig. 2 b) for deposition on the substrate 160.

When the shield elements 150 are in the first position 202 as shown in fig. 2a, the areas of the shield elements 150 that directly face one deposition source (e.g., the first deposition source 110 or the second deposition source 120) may receive deposition material at a higher rate than the areas of the shield elements 150 that are at a distance from the deposition source. Thus, deposition material may accumulate more quickly in the area of the masking element 150 directly facing one deposition source than in the area of the masking element 150 at a distance from the deposition source. For example, the deposition material may accumulate on the masking element 150 according to a deposition profile having one or more peaks at locations facing the deposition source and one or more valleys in locations away from the deposition source in the first direction. Thus, the effective shape of the masking elements 150 (i.e., the shape of the masking elements when considering the deposition material being accumulated on the masking elements 150) varies in a non-uniform manner with respect to the first direction 102. According to embodiments described herein, the movement of the masking elements 150 from the first position 202 to the second position 204 (where the second position 204 is at a distance from the first position 202 in the first direction 102) compensates for the uneven accumulation of deposition material on the masking elements 150 along the first direction 102.

In view of the above, embodiments described herein allow reducing non-uniformities in layers deposited on a substrate caused by accumulation of deposition material on the masking elements. Improved layer uniformity (e.g., uniformity of layer thickness and/or resistivity), particularly at the edge of the substrate, is thus provided by embodiments described herein. Embodiments described herein thus provide improved device performance as layer uniformity affects the performance of subsequent processes (such as, for example, etching) and devices in which coated substrates are used (e.g., display panels). In addition, embodiments described herein also allow for averaging of peaks and valleys of a material layer deposited over a masking element. Thereby, an increased masking element lifetime is provided.

The masking element 150 according to embodiments described herein is configured for controlling the deposition of material on the substrate 160 in a deposition process. The masking element 150 is desirable when the substrate edge region 162 of the substrate 160 should remain free or substantially free of deposition material. This may be the case if only a defined area of the substrate 160 should be coated due to later application and/or handling of the coated substrate. For example, the substrate 160 to be used as a display portion should have a predefined size. The large area substrate is coated with a masking element in order to mask the substrate edge region 162 of the substrate and/or to prevent backside coating of the substrate 160. This method allows a reliable and stable coating on a substrate.

The masking element 150 is adapted to mask a substrate region, for example, a substrate edge region 162. The concept of "masking" an area of substrate 160 may include reducing and/or impeding the deposition of material on the area of substrate 160.

According to an embodiment, the masking element 150 may be or comprise a piece of masking material, such as a carbon fiber material or a metal, such as aluminum, titanium, stainless steel, nickel-iron alloy, or the like.

According to embodiments, which can be combined with other embodiments described herein, the masking element 150 can be or include an edge exclusion mask or a portion of an edge exclusion mask. The edge exclusion mask may be made up of several parts or portions, which may form a frame. The mask frame may again have several frame parts or frame members. This may be advantageous, since the production of a frame assembled from different parts is considered more cost-effective than a one-piece frame. The masking element 150 according to embodiments described herein may refer to an edge exclusion mask or a portion of an edge exclusion mask, e.g., a frame portion of an edge exclusion mask. The masking element 150 (e.g., a frame portion of the edge exclusion mask) may be configured to move independently of other features (e.g., other frame portions of the edge exclusion mask).

According to embodiments, which may be combined with other embodiments described herein, the masking element 150 may be configured for masking a substrate edge portion 162 extending in the first direction 102. The masking elements 150 may extend in the first direction 102. The masking element 150 may have an elongated shape. For example, the masking element 150 may be an elongated element extending in the first direction 102 and having a first end and a second end. The masking element 150 may have a length and a width, where the length is much greater than the width. The first direction 102 may be a longitudinal direction (e.g., a length direction) of the masking element 150. The length of the masking elements 150 in the first direction 102 may be much greater than the width of the masking elements 150, e.g., the width in the second direction 104.

A substrate edge region (e.g., substrate edge region 162) refers to a thin peripheral area of the substrate. The substrate edge region may have a length and a width, wherein the length of the substrate edge region may be substantially greater than the width of the substrate edge region. The substrate edge region may extend in the first direction 102. The substrate edge region may have a length in the first direction 102 that is much greater than a width of the substrate edge region, e.g., a width in the second direction 104. The substrate edge region may be arranged at a single side of the substrate.

According to embodiments, which can be combined with other embodiments described herein, the substrate edge region of the substrate can have an area of about 5% or less, more particularly about 2% or less, still more particularly between about 1% to about 2% of the area of the substrate 160.

According to embodiments, which can be combined with other embodiments described herein, the width of the substrate edge region may be 8mm or less, more particularly 6mm or less. Depending on the application of the substrate 160 in question, the width of the substrate edge region may be symmetrical in the first direction 102 along the substrate length, but may also vary along this width. For example, the width of the substrate edge region at the middle portion of the substrate edge region may be from 3mm to 6 mm. For example, the width of the substrate edge area at the corner area of the substrate edge area may be from 0mm to 6 mm.

According to embodiments, which can be combined with other embodiments described herein, the length of the substrate edge area in the first direction 102 may be equal to the length of the substrate in the first direction 102. The masking element 150 may be configured for masking a substrate edge region extending along the entire length of the substrate 160 in the first direction 102. This embodiment is shown in fig. 1 c.

Alternatively, the length of the substrate edge area in the first direction 102 may be smaller than the length of the substrate in the first direction 102. The masking element may be configured for masking an edge region of the substrate extending over a portion of the length of the substrate in the first direction 102. The masking elements may be configured for masking one or more sections or portions of the substrate edge, possibly depending on the product function or manufacturing process. The length of the substrate edge region masked by the masking element 150 may be from 80% to 100%, in particular from 90% to 100%, of the length of the substrate 160 in the first direction 102.

Fig. 3a to 3d illustrate a deposition apparatus 100 according to embodiments described herein.

Fig. 3a illustrates the masking element 150 in a first position 202 at an initial stage of the deposition process. No material has been deposited over the masking element 150 shown in figure 3 a.

As compared to fig. 3a, fig. 3b illustrates the masking element 150 in a first position 202 at a subsequent stage of the deposition process. A layer of the deposition material 300 has accumulated on the masking element 150. The deposition material on the masking element 150 includes peaks 310 and 320 at positions facing the first deposition source 110 and the second deposition source 120, respectively. The valleys in the layer of deposition material 300 may form at a distance from the deposition source in the first direction 102. For example, the valley 330 is formed in a position between the first deposition source 110 and the second deposition source 120.

Fig. 3c illustrates the masking element 150 in the second position 204 shortly after the masking element 150 has been moved from the first position 202 to the second position 204. In an exemplary embodiment, the distance 220 between the first position 202 and the second position 204 is about 1/2 of the distance 350 between the first deposition source 110 and the second deposition source 120. The peaks 310 and 320 no longer face the deposition source but are located in a position at a distance from the deposition source in the first direction 102. For example, the peak 310 is in a position between the first deposition source 110 and the second deposition source 120. Then, the valleys 330 face the second deposition source 120. As material continues to be deposited over the masking elements 150 in the second direction 204, the deposited material may accumulate more rapidly in the regions of the masking elements 150 facing the deposition source (e.g., the valleys 330) than in the regions of the masking elements 150 that are further removed from the deposition source (e.g., the peaks 310 and 320).

In contrast to fig. 3c, fig. 3d illustrates the masking element 150 in the second location 204 at a subsequent stage of the deposition process. As shown, the layer thickness of the deposition material 300 deposited on the masking element 150 is substantially averaged, i.e., uniform, along the first direction 102. Thus, the uneven deposition profile including peaks and valleys as shown in fig. 3 b-3 c has been compensated for by moving the masking element 150 from the first position 202 to the second position 204.

According to embodiments, which can be combined with other embodiments described herein, the masking element 150 can be configured to move in the first direction 102 to compensate (e.g., average) a deposition profile of a material deposited on the masking element 150. The deposition profile may include one or more peaks and one or more valleys.

For example, in a system where the mask is not moved in the first direction 102, the peak of the deposition profile on the mask at the full target lifetime may have a maximum thickness, e.g., about 60 mm. The valleys of the deposition profile at full target life may have a minimum thickness, for example, about 45 mm. In contrast, where the masking elements 150 are moved in the first direction 102 (e.g., by a distance of about 50% of the distance 350 or the spacing between deposition sources) according to embodiments described herein, the thickness of the deposition material accumulated on the masking elements 150 may be averaged, for example, to about 52.5 mm. Thereby reducing the peak thickness of the material deposited on the masking element 150. Thereby, the layer uniformity of the layer deposited on the substrate is improved. In addition, the minimum to maximum deposition thickness ratio may be increased. Additionally, embodiments described herein may be provided with an increase in the life of the masking element (e.g., a 14% or more increase in life).

According to embodiments, which can be combined with other embodiments described herein, the masking element 150 can be configured to move in the first direction 102 for a distance that depends on the distance 350 between the first deposition source 110 and the second deposition source 120.

According to embodiments, which can be combined with other embodiments described herein, the first deposition source 110 is arranged at a first distance (e.g., distance 350 shown in fig. 3 a-3 d) from the second deposition source 120. The first distance may be a distance in the first direction 102. The masking element 150 may be configured to move in the first direction 102 for a second distance, such as the distance 220 shown in fig. 3 c. The second distance may be from 30% to 70%, more specifically from 40% to 60%, e.g., 50% of the first distance. The effect of averaging the peaks and valleys of the deposition profile on the masking elements 150 is further enhanced as the second distance becomes closer to 50% of the first distance. According to embodiments, the second distance may depend on or be determined by a minimum required distance from the deposition source to an adjacent deposition source or other component in the system, which may affect the function of the deposition source or other component.

According to embodiments, which can be combined with other embodiments described herein, the first distance (e.g., distance 350) between the first deposition source 110 and the second deposition source 120 is from 250 to 350mm, more particularly 280 to 320mm, e.g., about 300 mm.

As shown in fig. 3a to 3d, a first distance between the first deposition source 110 and the second deposition source 120 may be a distance 350 from a center of the first deposition source 110 to a center of the second deposition source 120. The first distance may be a distance 350 from a central axis or rotational axis of the first deposition source 110 to a central axis or rotational axis of the second deposition source 120. The center-to-center distance may depend on the size, e.g., width, of the deposition source in the first direction. The distance from the perimeter of the first deposition source to the perimeter of the second deposition source may be from about 0 to 3mm up to several hundred mm, specifically from 0mm to 300mm, more specifically from 3mm to 300 mm. The distance from the perimeter of the first or deposition source to adjacent components that may affect the source may be in the same range.

According to embodiments, which can be combined with other embodiments described herein, the masking element 150 is configured to move in at least the second direction 104 to compensate for accumulation of deposition material on the masking element 150.

Fig. 4a to 4b illustrate a deposition apparatus 100 according to embodiments described herein. The first deposition source 110 and the second deposition source 120 are not illustrated for ease of presentation. The masking elements 150 shown in fig. 4 a-4 b are configured to move in the first direction 102 and the second direction 104 to compensate for accumulation of deposition material on the masking elements 150.

Fig. 4a illustrates the masking element 150 in a first position 202. Fig. 4b illustrates the masking element 150 in the second position 204. The second location 204 is a distance 220 from the first location 202 in the first direction 102. The second location is a distance 420 from the first location 202 in the second direction 104. The masking element 150 shown in fig. 4b has been moved laterally (in the first direction 102) and upwardly (in the second direction 104) compared to the masking element 150 in the first position 202.

The deposition apparatus 100 shown in fig. 4a to 4b comprises an actuator 410 for moving the masking element 150 in the first direction 102 and the second direction 104.

According to embodiments described herein, the movement of the masking element 150 in the second direction 104 is performed for compensating for an accumulation of deposition material on the masking element 150. When the masking element 150 is in the first position 202 as shown in fig. 4a, deposition material emitted by the first deposition source 110 and the second deposition source 120 accumulates on the masking element 150. The growth of the deposited material on the masking elements 150 affects the effective shape of the masking elements 150. For example, the thickness of material formed on the edges of the masking elements 150 may increase the effective width of the masking elements 150 in the second direction 104. By moving the masking element 150 from the first position 202 to the second position 204, wherein the second position is at a distance 420 from the first position 202 in the second direction 104, the increased effective width of the masking element 150 may be compensated. Thereby, it may be ensured that the width of the area of the substrate 160 masked by the masking element 150 remains substantially fixed as the thickness of the deposited material accumulates on the edges of the masking element 150.

According to embodiments, which can be combined with other embodiments described herein, the masking element 150 can be configured to move in the second direction 104 for a distance of from 0mm to 30mm, particularly from 10 to 30mm, more particularly 15 to 30mm, for example, about 20 mm. The masking element 150 may be configured to move in the second direction 104 in a range from 0.03% to 3%, more specifically from 0.2% to 2%, for example from 0.5% to 1%, of the edge length of the substrate 160 in the first direction 102.

The movement of the masking element 150 in the second direction 104 may be an outward movement relative to the substrate 160 or substrate receiving area.

According to embodiments, which can be combined with other embodiments described herein, the masking element 150 can be configured to move incrementally in the second direction 104, e.g., a few microns per minute.

According to embodiments, which may be combined with other embodiments described herein, the movement of the masking element 150 from the first position to the second position 204 may comprise a first movement from the first position 202 to an intermediate position and/or a second movement from the intermediate position to the second position 204. The first movement may be substantially parallel to the first direction 102 and the second movement may be substantially parallel to the second direction 104, or vice versa. Alternatively or additionally, the movement of the masking element 150 from the first position 202 to the second position 204 may include movement along an angular direction. The angled or diagonal direction may be an angle relative to the first direction 102 and relative to the second direction 104.

For example, the masking element 150 shown in fig. 4 a-4 b may be moved from the first position 202 to the second position 204 by moving the masking element 150 in an angular or diagonal direction, as indicated by the diagonally oriented arrow 490. Alternatively, the masking elements 150 may be moved from the first position 202 to the second position 204, for example, by first moving the masking elements 150 to the right along a line parallel to the first direction 102, then moving up along a line parallel to the second direction 104, or vice versa. As a further option, the masking element 150 may be moved from the first position 202 to the second position 204 by a combination of the previous alternatives.

According to embodiments, which can be combined with other embodiments described herein, the movement of the masking element 150 (e.g., in the first direction 102 and/or the second direction 104) is performed while material is deposited on the substrate 160 and/or on the masking element 150.

According to embodiments, which can be combined with other embodiments described herein, the masking element 150 is movable relative to the substrate 160. The substrate 160 may remain in a substantially fixed position while the masking element 150 is moved.

According to embodiments, which can be combined with other embodiments described herein, the masking element 150 is movable relative to the first deposition source 110, the second deposition source 120, and/or any further deposition source of the deposition apparatus 100. The deposition source may remain in a substantially fixed position while the masking element 150 is moved.

According to embodiments, which can be combined with other embodiments described herein, the masking element 150 is movable in a plane parallel or substantially parallel to the substrate 160 or the substrate receiving area. Two planes can be considered substantially parallel when there is a small angle between the two planes of from 0 to 15 deg. (more specifically, 0 to 10 deg.).

According to embodiments, which can be combined with other embodiments described herein, the movement of the masking element 150 (e.g. in the first direction 102 and/or the second direction 104) is a translational movement.

According to embodiments described herein, for example, the masking elements are moved in the first direction 102 and/or the second direction 104 to compensate for the accumulation of deposition material on the masking elements 150. This type of movement is generally different from the movement of the masking elements 150 that is done solely for the purpose of aligning the masking elements 150 (e.g., alignment with respect to the substrate 160). In particular, movement of the masking elements 150 for alignment purposes may be performed regardless of the amount of deposition material that has been deposited on the masking elements 150. In contrast, according to embodiments described herein, the movement of the masking elements 150 depends on the accumulation of deposition material on the masking elements 150 during the deposition process, and the masking elements 150 are moved to compensate for such accumulation.

According to embodiments, which can be combined with other embodiments described herein, the first direction 102 may be parallel or substantially parallel to the substrate 160 or the substrate receiving area. The concept "substantially parallel" may include the first direction 102 being at a small angle relative to the substrate or substrate receiving area, wherein the angle may be from 0 to 15 degrees, more specifically from 0 to 10 degrees.

In embodiments where the substrate is oriented substantially vertically during the deposition process, the first direction may be a substantially horizontal direction. The substantially horizontal direction may include a direction at an angle of from 75 degrees to 90 degrees (more specifically, from 80 degrees to 90 degrees) with respect to the vertical direction.

According to embodiments that may be combined with embodiments described herein, the deposition source (such as, for example, the first deposition source 110 and/or the second deposition source 120) may extend in the second direction 104. The first deposition source 110, the second deposition source 120, and/or any additional deposition source may have an elongated shape, for example, a substantially cylindrical shape. The elongated shape may extend in a second direction. The first deposition source 110, the second deposition source 120, and/or any additional deposition sources may include a longitudinal axis, such as an axis of rotation. The longitudinal or rotational axis may extend in the second direction 104.

The second direction 104 is different from the first direction 102. The second direction 104 may be perpendicular or substantially perpendicular to the first direction 102. The two substantially perpendicular directions may include directions at an angle from 75 degrees to 90 degrees, more specifically from 80 degrees to 90 degrees.

The second direction 104 may be parallel or substantially parallel to a substrate or substrate receiving area of the deposition apparatus.

In embodiments where the substrate is oriented substantially vertically during the deposition process, the second direction 104 may be a substantially vertical direction. The substantially vertical direction may include a direction that deviates from the true vertical direction by a small angle (e.g., an angle from 0 to 15 degrees, specifically from 0 to 10 degrees).

According to embodiments, which can be combined with other embodiments described herein, the deposition apparatus 100 may comprise 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 16 or even more deposition sources.

Fig. 5a to 5b illustrate a deposition apparatus 100 according to embodiments described herein. The exemplary deposition apparatus 100 shown in fig. 5 a-5 b includes a deposition array including six deposition sources 110, 120, 530, 540, 550, and 560. Each deposition source has an axis of rotation extending in the second direction 104. The deposition array has a pitch 510.

The pitch of the deposition array may refer to a distance between adjacent deposition sources of the deposition array, in particular a distance in the first direction 102. More specifically, the pitch of the deposition array may refer to a distance between rotational axes of adjacent deposition sources of the deposition array.

Fig. 5a illustrates a masking element in a first position 202. Fig. 5b illustrates the masking element 150 in the second position 204. The second location 204 is a distance 220 from the first location 202 in the first direction 102. For example, distance 220 may be about 50% of pitch 510. By moving the masking element 150 from the first position 202 to the second position 204, the peak of the deposition material deposited on the masking element 150 may be shifted to a position between adjacent deposition sources of the deposition array. Thus, as discussed above, the movement from the first position 202 to the second position 204 allows for averaging of the deposition profile of the deposition material accumulated on the masking elements 150.

According to embodiments, which can be combined with other embodiments described herein, the deposition apparatus 100 can include a plurality of deposition sources for depositing material in a substrate receiving area. The plurality of deposition sources may be arranged on the same side of the substrate or substrate receiving area.

The plurality of deposition sources may include a first deposition source 110, a second deposition source 120, a third deposition source, an optional fourth deposition source, and optionally even more deposition sources. Adjacent deposition sources of the plurality of deposition sources may be arranged at substantially fixed distances from each other in the first direction 102.

The plurality of deposition sources may be a deposition array. A first distance between the first deposition source 110 and the second deposition source 120, such as, for example, the distance 350 shown in fig. 3 a-3 d, may be equal to a pitch of a deposition array, for example, the pitch 510 shown in fig. 5 a-5 b.

According to embodiments, which can be combined with other embodiments described herein, the masking element 150 is configured to move from the first position 202 to the second position 204, wherein the distance from the first position to the second position in the first direction 102 is from 30% to 70%, more particularly 40% to 60%, for example about 50% of the pitch of the deposition array.

According to embodiments, which can be combined with other embodiments described herein, the pitch of the deposition array can be from 250mm to 350mm, more particularly from 280mm to 320mm, for example, about 300 mm. The embodiments described herein thus provide a higher pitch than systems known in the art. The sputtering coil overlap is reduced due to the higher pitch. Thereby, the highest height of the peak of the deposition profile of the material deposited on the masking element may be further reduced. This, in turn, increases the lifetime of the masking element.

According to embodiments, which can be combined with other embodiments described herein, the deposition apparatus may comprise one or more actuators, for example actuator 410, for moving the masking element. One or more actuators may be configured for moving the masking element 150 in the first direction 102 and/or in the second direction 104. One or more actuators may be connected to the masking element 150. For example, the actuator may comprise a motor or a linear actuator. The deposition apparatus 100 according to embodiments described herein may comprise one or more power sources for providing power to one or more actuators, a movement controller and/or means for receiving a signal for triggering movement of a masking element.

According to embodiments, which can be combined with other embodiments described herein, the deposition apparatus may comprise a control unit for controlling the movement of the masking element 150.

The control unit may be configured for controlling the one or more actuators according to embodiments described herein.

The control unit may be configured for controlling the movement of the masking element 150 in the first direction 102 and/or the second direction 104 depending on the characteristics of the deposition material deposited on the masking element 150.

According to embodiments, which can be combined with other embodiments described herein, the masking element 150 may be moved under the control of the control unit, for example, after a predetermined period of time of depositing the material. The speed at which the masking element 150 is driven or the moment at which the masking element 150 is moved may be calculated by the control unit based on a predetermined deposition rate and/or based on measured data. For example, parameters of a certain process may be used to determine the deposition rate on the masking elements 150, and thus, for example, the speed at which the masking elements 150 are to be moved. For example, a look-up table may be used to determine the speed of movement of the masking element 150 or the time at which the masking element 150 is to be moved.

According to embodiments, which may be combined with other embodiments described herein, the movement of the masking element 150 may be controlled based on measurements of a deposited material layer on the masking element 150. The deposition apparatus 100 may include one or more sensors for measuring the amount or deposition profile of material deposited on the masking element 150. For example, a characteristic (such as a thickness of a layer of material over the masking element) may be measured, and movement of the masking element may be controlled by the control unit based on the measurement. The control unit may comprise one or more look-up tables for controlling the movement of the masking elements in the first direction 102 and/or the second direction 104.

According to embodiments, which can be combined with other embodiments described herein, for example, the deposition source of the deposition apparatus 100 may be adapted to perform a sputtering process, a Physical Vapor Deposition (PVD) process, a Chemical Vapor Deposition (CVD) process, a Plasma Enhanced Chemical Vapor Deposition (PECVD) process, and the like.

According to embodiments, which can be combined with other embodiments described herein, the first deposition source 110, the second deposition source 120, and/or any additional deposition source described herein can be configured for vacuum deposition. The deposition apparatus 100 may be a vacuum deposition apparatus. The deposition source may be disposed in a vacuum processing chamber.

According to embodiments, which can be combined with other embodiments described herein, the deposition source can be or comprise a cathode assembly. The deposition source may comprise a target, in particular a rotatable target. The rotatable target may be rotatable about an axis of rotation of the deposition source (e.g., the axis of rotation 112 of the first deposition source 110 as shown in FIG. 1 a). The rotatable target may have a curved surface, for example a cylindrical surface. The rotatable target may be rotatable about an axis of rotation, which is the axis of the cylinder or tube. The rotatable target may comprise a backing tube. A target material forming a target can be mounted on the backing tube, which can contain a material to be deposited onto a substrate during a coating process.

According to embodiments, which can be combined with other embodiments described herein, the first deposition source 110, the second deposition source 120, and/or any additional deposition source can each comprise a rotatable target having an axis of rotation extending in the second direction 104.

The deposition source may include a magnet assembly. The magnet assembly may be disposed in a rotatable target of the deposition source. The magnet assembly may be arranged such that target material sputtered by the deposition source is sputtered towards the substrate. The magnet assembly may generate a magnetic field. The magnetic field may cause one or more plasma regions to form in the vicinity of the magnetic field during the sputter deposition process. The position of the magnet assembly within the rotatable target affects the direction in which target material is sputtered away from the cathode assembly during the sputter deposition process.

According to another embodiment, a method of deposition is provided. The deposition method includes depositing a material on the substrate 160 using the first deposition source 110 and the second deposition source 120. The substrate 160 includes a substrate edge region 162 extending in the first direction 102. The method includes masking an edge region 162 of the substrate with a masking element 150 disposed on a first location 202. The method includes moving the masking element 150 from the first position 202 to the second position 204 to compensate for accumulation of deposition material on the masking element 150. The second position 204 is at a distance from the first position 202 in the first direction 102.

According to embodiments, which can be combined with other embodiments described herein, the first deposition source 110 may be disposed at a first distance, e.g., distance 350, from the second deposition source 120. The masking element 150 may be moved in the first direction 102 from the first position 202 to the second position 204 by a second distance, for example, the distance 220. The second distance may be from 30% to 70%, more specifically 40% to 60%, e.g. 50% of the first distance.

According to embodiments, which can be combined with other embodiments described herein, the masking element 150 may be moved from the first position 202 to the second position 204 to compensate for a deposition profile of the material deposited on the masking element 150. The deposition profile may include one or more peaks and one or more valleys. Before the masking element is moved from the first position 202 to the second position 204, e.g., just before the masking element is moved from the first position 202 to the second position 204, the deposition profile may include a first peak facing the first deposition source, a second peak facing the second deposition source, and/or a first valley facing a position between the first and second deposition sources. The first valley may face the first deposition source or the second deposition source after the masking element 150 is moved from the first position 202 to the second position 204, for example, just after the masking element 150 is moved from the first position 202 to the second position 204. The first peak and/or the second peak may be in a position at a distance from the first deposition source and the second deposition source in the first direction.

According to embodiments, which can be combined with other embodiments described herein, the second position 204 is at a distance from the first position 202 in the second direction 104.

According to embodiments, which can be combined with other embodiments described herein, the deposition method may comprise masking at least a portion of the substrate edge area 162 with a masking element 150 arranged in the second position 204.

For example, only a portion of the substrate edge region 162 may be masked by the masking element 150 in the second location 204. The area of the substrate 160 masked by the masking element in the second location 204 may be a different additional substrate edge area than the substrate edge area 162 masked by the masking element 150 in the first location 202. For example, the length of the further substrate edge area in the first direction 102 may be equal to the length of the substrate 160 in the first direction 102. Alternatively, the length of the additional substrate edge region in the first direction 102 may be less than the length of the substrate 160 in the first direction 102.

Alternatively, the entire substrate edge region 162 may be masked by the masking element 150 arranged in the second position 204. The area of the substrate 160 masked by the masking elements 150 in the second location 204 may be the same or substantially the same as the area of the substrate 160 masked by the masking elements 150 in the first location 202.

According to embodiments, which can be combined with other embodiments described herein, the deposition method can include moving the masking element 150 from the second position 204 to a third position to compensate for accumulation of deposition material on the masking element 150. The third location may be at a distance from the second location 204 in the first direction 102 and/or the second direction 104. The distance in the first direction 102 may be from 30% to 70%, more specifically from 40% to 60%, for example 50% of the first distance between the first deposition source and the second deposition source.

According to embodiments, which can be combined with other embodiments described herein, the substrate is a large area substrate.

The term "substrate" as used herein encompasses non-flexible substrates (e.g., glass substrates, wafers, transparent crystal (such as sapphire) slices or the like, or glass plates) and flexible substrates (such as rolls or foils). According to some embodiments, which can be combined with other embodiments described herein, the embodiments described herein can be used for display PVD, i.e. sputter deposition on large area substrates for the display market. According to some embodiments, the large area substrate or a corresponding carrier (wherein the carrier may carry a substrate or substrates) may have at least 0.67m ²The size of (2). The size may be about 0.67m ²(0.73X0.92 m-4.5 th generation) to about 8m ²More specifically about 2m ²To about 9m ²Or even up to 12m ². The substrate or carrier, to which the structures, apparatus (such as cathode assemblies) and methods according to embodiments described herein are provided, may be a large area substrate as described herein. For example, the large area substrate or carrier may be generation 4.5 (corresponding to about 0.67 m) ²Substrate (0.73x0.92m)), generation 5 (corresponding to about 1.4 m) ²Substrate (1.1mx1.3m)), generation 7.5 (corresponding to about 4.29 m) ²Substrate (1.95mx2.2 m)), generation 8.5 (corresponding to about 5.7 m) ²Of (2.2mx2.5 m)), or even generation 10 (corresponding to about 8.7 m) ²Substrate (2.85 mx3.05m)). Even larger generations such as 11 th and 12 th generations and corresponding substrate areas may be similarly implemented.

According to embodiments, which can be combined with other embodiments described herein, the deposition apparatus can comprise a substrate receiving area for receiving a substrate. The substrate receiving area may have a size and/or shape corresponding to the size and/or shape of the substrate considered according to embodiments described herein.

According to embodiments, which can be combined with other embodiments described herein, the deposition method is a static deposition method.

The difference between static deposition and dynamic deposition is as follows and is particularly applicable to large area substrate processing, such as processing vertically oriented large area substrates. Dynamic sputtering is a linear process in which the substrate is moved continuously or quasi-continuously adjacent to the deposition source. Dynamic sputtering has the following advantages: the sputtering process can be stabilized before the substrate is moved into the deposition area and then held stationary as the substrate passes the deposition source. Furthermore, dynamic deposition may have disadvantages, for example with respect to particle generation, as follows. This may be particularly applicable to TFT backplane deposition. It should be noted that the term static deposition process (as opposed to dynamic deposition process) does not exclude each movement of the substrate, as the skilled person will appreciate. For example, the static deposition process may include a static substrate position during deposition, an oscillating substrate position during deposition, a substantially fixed average substrate position during deposition, a dithered substrate position during deposition, a wobbling substrate position during deposition, or a combination thereof. Thus, a static deposition process may be understood as a deposition process having a static position, a deposition process having a substantially static position, or a deposition process having a partially static position of the substrate. Thus, a static deposition process as described herein may be clearly distinguished from a dynamic deposition process without the substrate position for the static deposition process having to be completely free of any movement of the substrate or cathode assembly during deposition.

While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.