阅读说明：本技术 一种半导体功率器件及其制备方法 (A kind of semiconductor power device and preparation method thereof ) 是由 梁智文 王�琦 汪青 张国义 于 2019-09-18 设计创作，主要内容包括：本发明涉及半导体器件技术领域,具体涉及一种半导体功率器件,包括基板和功率芯片,还包括覆盖层,基板设有图形化单元,基板的厚度匹配功率芯片设置,功率芯片的高度低于基板的厚度,功率芯片对应图形化单元安装,覆盖层盖设于基板设有图形化单元的一面,功率芯片经覆盖层覆盖安装于基板,本发明结构简单,设计合理,图形化单元的高度匹配功率芯片的厚度设置,装设后,功率芯片的高度低于基板,便于覆盖层的设置,也便于散热,使用效果好；本发明的制备方法,其工艺简单,便于工业化生产制造,且制备的半导体功率器件散热效果好。(The present invention relates to technical field of semiconductor device, more particularly to a kind of semiconductor power device, including substrate and power chip, it further include coating, substrate is equipped with graphical unit, the thickness matching power chip of substrate is arranged, the height of power chip is lower than the thickness of substrate, power chip corresponds to graphical unit installation, coating is covered on the one side that substrate is equipped with graphical unit, power chip is installed on substrate through coating covering, the configuration of the present invention is simple, design is reasonable, the thickness setting of the matched power chip of graphical unit, after installing, the height of power chip is lower than substrate, convenient for the setting of coating, it is also convenient for radiating, using effect is good；Preparation method of the invention, simple process are convenient for industrialized production manufacture, and the semiconductor power device good heat dissipation effect prepared.)

1. a kind of semiconductor power device, including substrate and power chip, which is characterized in that further include coating, substrate is equipped with Graphical unit, the thickness matching power chip setting of substrate, the height of power chip are lower than the thickness of substrate, power chip pair Graphical unit is answered to install, coating is covered on the one side that substrate is equipped with graphical unit, and power chip is covered through coating pacifies Loaded on substrate.

2. a kind of semiconductor power device according to claim 1, which is characterized in that substrate is made of diamond, Coating is diamond overlayer.

3. a kind of semiconductor power device according to claim 2, which is characterized in that diamond is polycrystalline, monocrystalline Or any one of quasi- polycrystalline or multiple combinations.

4. a kind of semiconductor power device according to claim 1, which is characterized in that the area of substrate is 0.1mm²- 90000mm², with a thickness of 0.1mm-80mm, the setting of size mesh power device.

5. a kind of semiconductor power device according to claim 1, which is characterized in that the shape of substrate is polygon, circle Any one of shape or triangle.

6. a kind of semiconductor power device according to claim 1, which is characterized in that overburden cover 0.1mm- 10mm, the setting of thickness matching power chip.

7. a kind of semiconductor power device according to claim 1, which is characterized in that power chip is equipped with pin, pin Including S source electrode, D drain electrode and G grid.

8. a kind of preparation method of semiconductor power device according to claim 1-7, which is characterized in that including Following steps:

Step 1: substrate is prepared；

Step 2: graphical unit is set on substrate；

Step 3: several power chips correspondence is caught in several chip units by installing power chip；

Step 4: pin protective film is arranged to the pin of power chip；

Step 5: setting coating, according to the High deposition diamond of power chip, formed diamond overlayer to get Power device.

9. a kind of preparation method of semiconductor power device according to claim 8, which is characterized in that

It suppresses to form cvd diamond substrate by CVD method or using diamond dust in step 1；

Graphical unit, In are arranged in substrate side by semiconductor lithography, physics pressurising or laser processing in step 2 Several chip units are arranged in graphical unit；

Power chip is carried out with micro silver paste or high temperature solder pasting processes in step 3 to fix；

It is protected using semiconductor light photoresist in pin setting protective film in step 4；

Diamond deposition is equipped in substrate by graphical unit one side by the technique of CVD in step 5, forms coating.

10. a kind of preparation method of semiconductor power device according to claim 8, which is characterized in that step 5 it Afterwards, cutting substrate is carried out to cut substrate by laser, machinery or the method for corrosion according to the distribution of power chip, Removal pin protective film is after cutting to get independent molding power device.

Technical field

The present invention relates to technical field of semiconductor device, more particularly to a kind of semiconductor power device and its preparation side Method.

Background technique

With the progress of social science and technology, the density of new generation of semiconductor power device is continuously improved, and performance is more excellent, Its excellent high-power, high voltage has been showed as the third generation semiconductor power device of representative using gallium nitride and highdensity has been answered Use characteristic.

Result of study shows that semiconductor power device performance considerably beyond traditional devices physics limit performance, but is actually being answered For the device performance that used time shows well below its theoretical performance, this is primarily due to semiconductor power device in the big electricity of output A large amount of heat accumulations can be generated while stream, cause the sharply raising of device temperature, and gallium nitride and silicon carbide are the device of representative It encapsulates still based on traditional encapsulation technology, plastic packaging and metal heat-conducting, it is whole with lower for relative high powers device Thermal conductivity, heat dissipation problem seriously limit the performance of gallium nitride and nitride silicon device, cause its device performance and reliability serious Decline, limits service performance.

Summary of the invention

To solve the above problems, the present invention provides a kind of semiconductor power device and preparation method thereof, structure is simple, if Meter is reasonable, good heat dissipation effect, and service performance is good.

The technical solution adopted by the present invention is that: a kind of semiconductor power device, including substrate and power chip, further include covering Cap rock, substrate are equipped with graphical unit, and the thickness matching power chip of substrate is arranged, and the height of power chip is lower than the thickness of substrate Degree, power chip correspond to graphical unit installation, and coating is covered on the one side that substrate is equipped with graphical unit, power chip warp Coating covering is installed on substrate.

Further improvement to above-mentioned technical proposal is that substrate is made of diamond, and coating is diamond covering Layer.

Further improvement to above-mentioned technical proposal is that diamond is any one of polycrystalline, monocrystalline or quasi- polycrystalline Or multiple combinations.

Further improvement to above-mentioned technical proposal is that the area of substrate is 0.1mm2-90000mm2, with a thickness of 0.1mm- 80mm, the setting of size mesh power device.

Further improvement to above-mentioned technical proposal is that the shape of substrate is any in polygon, circle or triangle Kind.

Further improvement to above-mentioned technical proposal is overburden cover 0.1mm-10mm, thickness matching power core Piece setting.

Further improvement to above-mentioned technical proposal is that power chip is equipped with pin, and pin includes S source electrode, D drain electrode and G Grid.

A kind of preparation method of semiconductor power device, comprising the following steps:

Step 1: substrate is prepared；

Step 2: graphical unit is set on substrate；

Step 3: several power chips correspondence is caught in several chip units by installing power chip；

Step 4: pin protective film is arranged to the pin of power chip；

Step 5: setting coating forms diamond overlayer according to the High deposition diamond of power chip, Up to power device.

Further improvement to above-mentioned technical proposal is,

It suppresses to form cvd diamond substrate by CVD method or using diamond dust in step 1；

Graphical list is arranged in substrate side by semiconductor lithography, physics pressurising or laser processing in step 2 Several chip units are arranged in graphical unit in member；

Power chip is carried out with micro silver paste or high temperature solder pasting processes in step 3 to fix；

It is protected using semiconductor light photoresist in pin setting protective film in step 4；

Diamond deposition is equipped in substrate by graphical unit one side by the technique of CVD in step 5, forms coating.

Further improvement to above-mentioned technical proposal is, after step 5, cutting substrate is carried out, according to power chip Distribution, cuts substrate by laser, machinery or the method for corrosion, and removal pin protective film is after cutting to get only Found molding power device.

Beneficial effects of the present invention are as follows:

1, semiconductor power device provided by the invention, by diamond all standing power chip, solve with silicon carbide and Gallium nitride is the high power device thermal buildup issue of representative, and by utilizing diamond high thermal conductivity characteristic, all standing encapsulation, which increases, to be led Device is worked generated heat Quick diffusing to external environment, device is made to be in lower operating temperature always by the passage of heat, Reach and keep optimal device working performance, the diamond of the thermally conductive ratio of highest is dexterously utilized in the present invention, radiates The thermally conductive ratio thermal conductivity of the other materials such as the remote super metal of performance, diamond is much higher than copper (380W/m.K) up to 2000W/m.K, Next breaches the Technology Ways that tradition utilizes Plastic Package, and breaching traditional devices cannot be used for being greater than 300 DEG C of applied field Scape, structure is simple, and design is reasonable, good heat dissipation effect, and service performance is good.

2, the preparation method of semiconductor power device of the present invention, simple process is easy to operate, meets industry Change production requirement, and semiconductor power device service performance obtained is good.

Detailed description of the invention

Fig. 1 is the structural diagram of the present invention；

Fig. 2 is schematic diagram of substrate structure of the invention；

Fig. 3 is that the structural schematic diagram after graphical unit is arranged in substrate of the invention；

Fig. 4 is that graphical substrate of the invention installs the structural schematic diagram after power chip；

Fig. 5 is the structural schematic diagram that power chip pin of the invention is arranged after protective film；

Fig. 6 is the structural schematic diagram after substrate deposition coating of the invention；

Fig. 7 is the structural schematic diagram of power device to be cut of the invention；

Fig. 8 is the power unit structure schematic diagram after completion cutting of the invention；

Note: b is the cross-sectional view in the figure in a in each figure.

Description of symbols: 1. substrates, 2. graphical units, 3. power chips, 4. pins, 5. chip units, 6. coverings Layer.

Specific embodiment

The present invention will be further explained below with reference to the accompanying drawings.

As shown in FIG. 1 to FIG. 8, semiconductor power device described in the present embodiment, including substrate 1 and power chip 3, also wrap Coating 6 is included, substrate is equipped with graphical unit 2, and the thickness matching power chip 3 of substrate 1 is arranged, and the height of power chip 3 is low In the thickness of substrate 1, the corresponding graphical unit 2 of power chip 3 is installed, and coating 6 is covered on substrate 1 equipped with graphical unit 2 One side, power chip 3 is installed on substrate 1 through the covering of coating 6, the configuration of the present invention is simple, design rationally, graphical unit The thickness of matched power chip 3 is arranged, and after installing, the height of power chip 3 is lower than substrate 1, convenient for setting for coating 6 It sets, is also convenient for radiating, using effect is good；Preparation method of the invention, simple process are convenient for industrialized production manufacture, and make Standby semiconductor power device good heat dissipation effect.

Substrate 1 is made of diamond, and the thermally conductive ratio thermal conductivity of diamond is much higher than up to 2000W/m.K The metal heat-conducting ratio of copper (380W/m.K) etc, diamond can play the part of efficient heat dissipation channel, further increase this The heat dissipation performance of invention.

Diamond is any one of polycrystalline, monocrystalline or quasi- polycrystalline or multiple combinations, the area of substrate 1 are 0.1mm2-90000mm2, with a thickness of 0.1mm-80mm, size mesh power device setting, the shape of substrate 1 is polygon Any one of shape, circle or triangle, setting in this way can according to need flexible setting, easy-to-use.

Coating 6 is diamond overlayer 6, and coating 6 sets with a thickness of 0.1mm-10mm, thickness matching power chip Set, structure is simple, design rationally, by be arranged diamond overlayer 6, can it is thermally conductive with further progress and heat dissipation, further really Break even the heat dissipation performance and service performance of invention.

Power chip 3 is equipped with pin 4, and pin 4 includes S source electrode, D drain electrode and G grid, and structure is simple, and design rationally, is convenient for It is connect with other assemblies, it is easy to use.

The preparation method of above-mentioned semiconductor power device, comprising the following steps:

Step 1: preparing substrate 1, is suppressed by CVD method or using diamond dust and to form cvd diamond substrate 1；

Step 2: being arranged graphical unit 2 on substrate 1, passes through semiconductor lithography, physics pressurising or laser processing Graphical unit 2 is set in substrate 1 on one side, several chip units 5 are set in graphical unit 2；

Step 3: several power chips 3 correspondence is caught in several chip units 5, with micro silver paste by installing power chip 3 Or high temperature solder pasting processes are solidified；

Step 4: being arranged 4 protective film of pin to the pin 4 of power chip 3, is arranged using semiconductor light photoresist in pin 4 Protective film is protected.

Step 5: diamond deposition is equipped with graphical unit 2 one in substrate 1 by the technique of CVD by setting coating 6 Face forms coating 6；

Step 6: cutting substrate 1, according to the distribution of power chip 3, by laser, machinery or the method for corrosion to base Plate 1 is cut；

Step 7: removal protective film removes 4 protective film of pin, and the diamond overlayer 6 deposited on protective film is with protection Falling off for film and fall off, the pin 4 of power chip 3 is exposed to get independent molding power device.

Preparation method of the invention, main includes preparing Buddha's warrior attendant substrate 1, and substrate 1 is graphical, and power chip 3 is laid out, and carries out Diamond cap layer deposition, cuts and goes the technical steps such as exposure mask medium, as shown in Figure 1, firstly, preparing cvd diamond substrate 1, this reality Imposing 1 length and width of substrate is 50mm, and for 1mm, material is insulation polycrystalline diamond, and the equipment of preparation is MPCVD, with Methane is carbon source, is passed through oxygen and hydrogen, and the power of plasma is 4KW, growth rate 50um/h, carries out polycrystalline diamond Prepared by substrate 1, deposit 20 hours, and the preparation of polycrystalline diamond substrate 1 is completed；As shown in Fig. 2, followed by semiconductor lithography process Processing procedure is patterned polycrystalline diamond substrate 1, and the size of figure is 3mm*2mm*0.5mm, schemes as indicated at 3, power device Part chip layout is in graphical unit 2, and the size of power chip 3 is 2mm*1.5mm*0.3mm, and power chip 3 uses trace silver Cured mode is starched to fix；Shown such as Fig. 4, the distribution of pin 4 then according to chip is carried out on lead to cvd diamond substrate 1, such as It is followed by photoetching glue medium that pilot protection is good shown in Fig. 5.The polycrystalline diamond substrate 1 for fixing chip is placed again into In MPCVD reaction chamber, polycrystalline diamond sedimentary cover is carried out, thickness is similarly 1mm, and entire substrate 1 and power chip 3 is whole Depositing diamond coating 6, to achieve the effect that diamond all standing encapsulates；It, can be into power device if there is use demand It is cut, is prepared into independent power device, it is specific as shown in Figure 6, packaged full wafer base is taken out from MPCVD reaction chamber Then plate 1 is cut according to the layout of power device chip, as shown in Figure 7, be divided into independent unit one by one, most The exposure mask medium of protection lead is removed using glue-dispenser afterwards, source S, the leakage D and grid G of power device are exposed, to realize Without plastics, the power electronic device of high thermal conductivity is encapsulated, and can be used for high temperature application environment, simple process is convenient for industrialized production Manufacture, and the application performance of the semiconductor power device prepared is good, using effect is good.

The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously Limitations on the scope of the patent of the present invention therefore cannot be interpreted as.It should be pointed out that for those of ordinary skill in the art For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to guarantor of the invention Protect range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.