阅读说明：本技术 半导体布置 (Semiconductor arrangement ) 是由 S·D·哈特 T·伍尔默 C·S·马拉姆 T·希尔曼 R·菲利普斯 于 2018-01-30 设计创作，主要内容包括：一种半导体布置和包含该半导体布置的逆变器,特别是用于牵引动力单元(例如用于公路和越野车辆和固定功率逆变)的逆变器。在该布置中,半导体装置热耦合和电耦合到散热器以作为模块。散热器被配置为母线,以将一个或多个半导体装置电连接在一起,以在一个或多个半导体装置之间传输电力。半导体装置可以使用它们所附接的结构来冷却,并且还浸没在冷却介质中以进一步增加装置的冷却。(A kind of semiconductor arrangement and the inverter comprising the semiconductor arrangement are especially used for the inverter of traction power unit (such as highway and off-road vehicle and constant power inversion).In this arrangement, semiconductor device thermal coupling and radiator is electrically coupled to using as module.Radiator is configured as bus, and one or more semiconductor devices are electrically connected, to transmit electric power between one or more semiconductor devices.The structure attached by them can be used to cool down in semiconductor device, and is also immersed in the cooling that device is further increased in cooling medium.)

1. a kind of semiconductor arrangement, comprising:

Module, has one or more semiconductor devices, one or more of semiconductor device thermal couplings and is electrically coupled to scattered Hot device, the radiator are configured as bus, one or more of semiconductor devices are electrically connected, described Transmit electric power between one or more semiconductor devices and radiator including one or more heat-exchanging parts, it is one or Multiple heat-exchanging parts by heat from the heat sink to ambient enviroment,

Wherein the semiconductor arrangement immerses in cooling medium with the cooling semiconductor arrangement.

2. semiconductor arrangement according to claim 1, wherein one or more of semiconductor devices are semiconductor powers Device.

3. semiconductor arrangement according to claim 1 or 2, wherein one or more of semiconductor devices include IGBT, Silicon carbide (SiC) semiconductor switching device, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) or power diode.

4. according to claim 1, semiconductor arrangement described in 2 or 3, wherein one or more of semiconductor devices are mechanically attached Connect or be joined to the radiator.

5. semiconductor arrangement according to any one of the preceding claims, wherein the heat-exchanging part includes: to have rule Then or the fin of irregular contour, pin hole, hole or slot.

6. a kind of for DC to be converted to the inverter of AC, comprising:

One or more input, is used to receive one or more D/C voltages；

One or more output, is used to export one or more AC voltages；

Multiple semiconductor arrangement modules according to any one of claim 1 to 5, are coupled to one or more of defeated Enter and be installed to printed circuit board (PCB) with one or more of outputs, the semiconductor arrangement module, the PCB provides institute State the electrical connection between semiconductor device, one or more of inputs and one or more of outputs；And

Shell, for the multiple semiconductor apparatus mould to be contained in the intracorporal chamber of the shell, the shell includes point Not with the chamber in fluid communication with the ingress port and outlet port for receiving and exporting cooling medium, wherein the chamber Filled with cooling medium with the cooling inverter.

7. inverter according to claim 6, wherein the input D/C voltage includes that+DC input voltage and/or-DC are inputted Voltage, and wherein the AC output includes AC phase output voltage.

8. inverter according to claim 6 or 7 is indulged wherein each of the multiple semiconductor arrangement module has To axis, and wherein, each module is installed on the pcb, so that the longitudinal axis of the module is parallel to each other.

9. inverter according to claim 8, wherein the module arrangement is on the pcb, so as at least one axis It is symmetrical on line.

10. inverter according to any one of claims 6 to 9, wherein modular electrical arrangement is to provide three-level T-type Topological structure or two-stage topological structure.

11. inverter according to claim 10, wherein when being configured as three-level T-type topological structure, the inverter Including the 2nd DC output in DC/2 voltage.

12. inverter described in 0 or 11 according to claim 1, wherein electrical arrangement between the module can by one or The radiator bus of two modules is connected to by multiple connection bus configurations, each of one or more of connection buses Together, in order to provide the three-level T-type topological structure or two-stage topological structure.

13. inverter according to claim 12 is arranged to three-level T-type wherein the inverter includes four modules Configuration, and wherein two radiator buses in four modules are electrically connected using connection bus.

14. inverter according to claim 13, wherein on PCB between the first module and the 4th module The radiator bus of two modules and third module is electrically connected using the connection bus.

15. inverter according to claim 12 is arranged to second level T wherein the inverter includes four modules Type configuration, and wherein the radiator bus of first group of two module is electrically connected using the first connection bus, and And wherein the radiator bus of second group of two module is electrically connected using the second connection bus.

16. inverter according to claim 15, wherein the second module and third module in the module are positioned at described On the PCB between first module and the 4th module, and the wherein radiator of first module and third module Bus is electrically connected using the first connection bus, and wherein the radiator bus of the second module and the 4th module makes It is electrically connected with the second connection bus.

17. inverter described in 0 or 11 according to claim 1 is arranged to three wherein the inverter includes three modules Grade T-type configures, and the first module and third module in the module are located at the either side on the PCB in second module.

18. the inverter according to any one of claim 6 to 17, including two or more semiconductor arrangement modules, One phase of each of the two or more semiconductor arrangement modules offer heterogeneous output AC voltage.

19. the inverter according to any one of claim 6 to 18, wherein the cooling medium, which is that dielectric is cooling, to be situated between Matter.

20. the inverter according to any one of claim 6 to 19, wherein the PCB and installation on the pcb attached Power-up gas and electronic component are located in the chamber and are immersed in the cooling medium.

21. the inverter according to any one of claim 6 to 20, wherein the cooling medium is pumped so as to be given an account of Matter flows between the ingress port and the outlet port.

22. the inverter according to any one of claim 6 to 21, wherein the ingress port of the inverter and outlet end Mouth is coupled to the cooling circuit including heat exchanger, and the heat exchanger is used to remove heat from the cooling medium.

23. inverter according to claim 22 moves wherein the output of the inverter is configured to motor offer Power, and wherein the cooling circuit of the cooling circuit and the motor is in fluid communication.

24. the inverter according to any one of claim 6 to 22, wherein the output of the inverter is configured to electricity Motivation provides power.

Technical field

The present invention relates to a kind of semiconductor arrangement and a kind of inverter comprising the semiconductor arrangement more particularly to a kind of use In the inverter of traction power unit (such as highway and off-road vehicle and constant power inversion).

Background technique

In the past twenty years, in the case where the worldwide trend of " more motorized " pushes, electrically powered machine has developed non- Chang Xianzhu, wherein power and torque density and maximum and continuous power output all makes moderate progress, i.e., electrically powered machine become smaller and/or Power output increases.

The example of electrically powered machine can be for example: various types of hybrid vehicles, all-electric vehicle, in land and water two With with the propeller drives in airborne aircraft and in the movement and stationary engine in land, sea and aerial applications It finds.There are many other examples, and wherein electrically powered machine is using or be look for new application.

(ICE) technology of internal combustion engine now be the limited some applications in hybrid and space in, have high power density and The inverter of small package size is particularly advantageous.Increasing space, (wherein engine components have been to adapt to motorized technology and ICE Close packing) panel and component may be will affect, and modify available space and many times need new tool simultaneous Usually excessively high cost.

In many cases, for power inverter technological lag in the progress of electrically powered machine, this leads to appropriately sized power Inverter cannot be used for optimal electrically powered machine, the i.e. electrically powered machine of power inverter compared with the existing technology disproportionately Greatly.

In this case, (seven is many by the converting direct-current power into alternating-current power for being generally from battery or other sources for inverter When but simultaneously not always in the form of 3 phases) to provide power to electrically powered machine.

Other than low power density, even continuous rating power is by advanced electronic when maximum power or in some cases When machine is drawn, it is also possible to inverter overheating occur.

It is well known that electrically powered machine by the operation of electric current flowing, passive and active component in electric wire connects and Incude and generates Joule heat (I²R the effort) lost, and minimize these losses, passes through the hair of such as WO2010092400 It is bright realization and increase power density, wherein the Joule losses be managed and from machine remove, allow them to make more efforts Ground work, to substantially increase power/torque density.

Making electrically powered machine, need of work power inverter is similarly continually generated by DC power supply in offer harder AC power supplies in terms of work hard.This so-called " power inverting " is by being arranged to processing high pressure, being switched fast and temporary electrical power The various electronic components of storage execute.

It is well known that the Joule heat that the electric current that Electrical and Electronic device also generates and passes through matches, and it is passive and active The temperature raising of electronic device, which can lead to inverter efficiency, to be reduced and makes inverter components premature failure in the worst case. Therefore, it is necessary to inverter cooling mechanisms.

Several method has been had taken up to solve the problems, such as that the Joule heat temperature in electronic module increases.WO2016008509 is retouched The electronic component for being arranged to and mechanically or thermally contacting with multiple radiators is stated, wherein electronic component and radiator are immersed in cooling In medium, wherein radiator itself is arranged to guidance cooling medium at the cooling medium flowed with zigzag, from an electronics Component is to another electronic component, from housing entry to its outlet.

The shortcomings that this method is electronic component and radiator is electrically isolated and the thermal resistance caused by insulating increases, and reduces The power consumption of electronic component, and the packaging density of component is not compact, to increase the size of electronic module and substantially reduce it Power density.

WO2005048672 yet another method is provided that, which teach a kind of double-walled electrically or electronically devices, wherein passing through Electrical and Electronic component is mounted on the inner wall of double walled housing to the heat for dissipating and being generated by Electrical and Electronic component, wherein in Wall provides heat absorbent surface, and outer wall provides an air pipeline, and the air of fan driving is by the air pipeline by heat from interior Shell, which is passed to, is forced mobile air by fan, which is exported.

The shortcomings that this method, also resides in the thermal resistance between Electrical and Electronic component, these components be with inner casing be thermally connected but It is not electrically connected, therefore the power consumption in these components is less than electricity that is may be implemented and assembling using this double walled housing method Son/electric device is therefore bigger.

US2014355212 teaches a kind of Motor Control device assembly being immersed in non-conductive fluorine carbon coolant liquid.The electricity Motivation controller includes power strip module and the semiconductor switch for MOSFET.Each switch has the heat dissipation of individual clip Device, to increase the surface area that can be used for cooling down liquid.

Although US2014355212 significantly improves cooling by the cooling capacity of fluorocarbon fluid coolant, Installation of the radiator on each switch block reduces component packaging density, this directly affects the size of motor controller.

Generally, it is desirable to improve the thermo-contact between fever electrical/electronic components and thermal diffusion/heat-radiating substrate, And these components are packed closely together using improved heat transfer and cooling, to make component miniaturization and these components are placed in electricity In the advantageous arrangement of gas.

Therefore, we recognize that needing improved semiconductor arrangement, and the inverter comprising the semiconductor arrangement.

Summary of the invention

Therefore, the present invention provides a kind of semiconductor arrangements, comprising: there is the module of one or more semiconductor devices, Semiconductor device thermal coupling and it is electrically coupled to radiator, radiator is configured as bus, by one or more semiconductor devices It is electrically connected, to be passed between the radiator including one or more heat-exchanging parts in one or more semiconductor devices Transmission of electricity power, one or more heat-exchanging parts are by heat from heat sink to ambient enviroment, and wherein semiconductor arrangement immerses cold But to cool down semiconductor arrangement in medium.

Semiconductor device can be made of one or more semiconductor devices, and semiconductor device is semiconductor power device, It include: insulated gate bipolar transistor (IGBT), silicon carbide (SiC) semiconductor switching device, metal oxide semiconductor field-effect Transistor (MOSFET), power diode and similar device.

Semiconductor power devices mechanically can be attached or be joined to conductive and thermally conductive radiator.Heat-exchanging part can wrap It includes: there is fin, pin hole, hole or the slot of rule or irregular contour.

The present invention also provides a kind of for DC to be converted to the inverter of AC, comprising: one or more input is used for Receive one or more D/C voltages；One or more output, is used to export one or more AC voltages；Multiple above-mentioned partly leads Body arranges that module, multiple semiconductor arrangement modules are coupled to one or more inputs and one or more outputs, semiconductor arrangement Module is installed to printed circuit board (PCB), and PCB provides semiconductor device, one or more inputs and one or more outputs Between electrical connection；And shell, for multiple semiconductor apparatus moulds to be contained in the intracorporal chamber of shell, shell includes difference With chamber in fluid communication with the ingress port and outlet port for receiving and exporting cooling medium, middle chamber is filled with cooling Medium is to cool down inverter.

In the inverter, input D/C voltage may include+DC input voltage and/or-DC input voltage, and wherein AC Output may include AC phase output voltage.

Each of multiple semiconductor arrangement modules have longitudinal axis, and wherein each module is mounted on PCB, So that the longitudinal axis of module is parallel to each other.Module arrangement is on PCB, so as to symmetrical at least one axis.

Module is electrically arranged to provide three-level T-type topological structure or two-stage topological structure.

When being configured as three-level T-type topological structure, inverter includes exporting in the 2nd DC of DC/2 voltage.

Electrical arrangement between module can connect bus configuration by one or more, and one or more connects in bus Each links together the radiator bus of two modules, in order to provide three-level T-type topological structure or two-stage topological structure.

Inverter may include four modules, be arranged to the configuration of three-level T-type, and wherein two in four modules Radiator bus is electrically connected using connection bus.In this arrangement, between the first module and the 4th module The radiator bus of the second module and third module on PCB is electrically connected using connection bus.

Inverter may include four modules, be arranged to the configuration of second level T-type, and wherein first group of two module Radiator bus is electrically connected using the first connection bus, and wherein the radiator bus of second group of two module uses Second connection bus is electrically connected.In this arrangement, second and third module in module are located at first and the 4th mould On PCB between block, and wherein first and third module radiator bus using first connection bus be electrically connected, And wherein second and the 4th module radiator bus using second connection bus be electrically connected.

Inverter may include three modules, be arranged to the configuration of three-level T-type, the first module and third mould in module Block is located at the either side on PCB in the second module.

In any of the above, inverter may include two or more semiconductor arrangement modules, two or more One phase of each of multiple semiconductor arrangement modules offer heterogeneous output AC voltage.

Cooling medium can be dielectric cooling medium, such as dielectric fluid.

In above-mentioned inverter, PCB and the additional electrical and electronic component being mounted on PCB are located in chamber and are immersed in In cooling medium.

Cooling fluid is pumped, so that medium flows between ingress port and outlet port.

Inverter ingress port and outlet port are coupled to the cooling circuit including heat exchanger, and heat exchanger is used for from cold But medium removes heat.

The output of inverter is configured as motor and provides power, and the wherein cooling circuit of cooling circuit and motor It is in fluid communication.

The output of inverter is configured to motor and provides power.

Detailed description of the invention

The present invention only will be described by example, with reference now, in which:

Fig. 1 shows the schematic diagram of full blend range expander；

Fig. 2 shows the power semiconductor engaged with radiator；

Fig. 3 shows that radiator arranges which show bus functions；

Fig. 4 a, Fig. 4 b, Fig. 4 c show radiator-busbar arrangement, and it illustrates bus functional circuits；

Fig. 5 a, Figure 5b shows that radiator-busbar arrangements, to provide three-level T-type topological structure；

Fig. 6 a, Fig. 6 b show radiator-busbar arrangement, to provide two-stage topological structure；

Fig. 7 a, Fig. 7 b, Fig. 7 c are shown with the inverter module being arranged symmetrically with fluid flow path；

Fig. 8 a, Fig. 8 b, Fig. 8 c show the various arrangements of coolant circuit；And

Fig. 9 a, Fig. 9 b, Fig. 9 c show coolant circuit.

Specific embodiment

In brief, the present invention utilizes a kind of arrangement, wherein semiconductor device heat and is electrically coupled to radiator using as one A module.Radiator is configured as bus, one or more semiconductor devices is electrically connected, in one or more Electric power is transmitted between semiconductor device.Advantageously, it means that semiconductor device, which can be used, to be electrically connected and be thermally connected with them Structure cool down semiconductor device.In addition, the invention enables the modular constructions can be used in biggish device, such as inversion Device, and these modules can also be immersed to the cooling that device is further increased in cooling medium.

With reference to Fig. 1, exemplary use of the present invention in full hybrid power range expander is shown, wherein internal combustion engine 100 mechanical connections are also connected to controller/inverter assembly 120 (output dc voltage) to drive genemotor 110, It is also connected to battery 130, which is also connected to second controller/inverter assembly 140 (output 3 phase AC voltages), to the Two motor/movement machine traction unit 150 is started to provide electric power.

This be inverter technology application an example, it is to be understood that inverter can there are many for land, Mobile application waterborne and aerial and it is similarly used for stationary machines.

Although example of the invention is made with reference to the inversion of DC to AC power supplies, those skilled in the art will be seen It can be configured as to inverter unidirectional, i.e., DC being converted to AC or AC and being converted to DC or inverter can be configured as Two-way, that is, DC to AC and AC to DC, and the present invention is suitable for all such power inverting configurations.

Fig. 2 a, Fig. 2 b, Fig. 2 c show Example semiconductors arrangement.In this arrangement, one group of power semiconductor switch 10 It directly engages, or to be attached to radiator 20 using relevant grouping to end electrical module.For example, engagement can be short The high-temperature soldering method (not describing) carried out in time, so as not to have an adverse effect to the work of semiconductor component 10.Directly The use of engagement provides low resistance electrical interface and corresponding low thermal resistance thermal interface.

Fig. 2 a, Fig. 2 b, Fig. 2 c show three kinds of different configurations of bus-radiator 20.Usually collector (rather than send out Emitter-base bandgap grading or grid) it is electrically attached to radiator 20, and pass through parallel semiconductor switch device 10, such as insulated gate bipolar transistor (IGBT), electric current output can correspondingly be increased.

Power semiconductor 10 is welded direct to conductive and heat conduction radiator 20, to remove heat, switch from switching device 10 Device 10, which is arranged to one for providing phase inverter 40, source arm.

Radiator-bus is conductive and has correspondingly high thermal conductivity, and usually by high thermal conductivity and conductive material (for example, aluminium or copper, can enhance processing/forming characteristic with other elements alloying) is made.

As can be seen that semiconductor switch 10 can be with close installation and to be easy to the lattice replicated in Fig. 2 a, Fig. 2 b, Fig. 2 c Formula installation, forms module 40 with high precision, to optimize a possibility that mechanical symmetrical, this is the strong of required electric symmetry Contributor.Semiconductor and electronic component layout are designed to minimize the inductance between component, partially by the close of component It approaches to realize, and also provides symmetric path for each phase, the semiconductor device switch 10 in especially each phase.

The distinct methods that can be used in the present invention from semiconductor device heat partition and then dissipate, such as common band The radiator (shown in such as Fig. 2 a, Fig. 2 c) of fin, finer pin grid radiator (not shown) or newly surprising Efficient radiator (as shown in Figure 2 b) with holes, wherein radiator is also the building block of electric circuit in each case, usually As high current bus.

The inductance minimized in power component current path is extremely important for improving efficiency when switching high current.Pass through It using straight and un-flexed conducting path and keeps the conducting path as short as possible, the minimum of inductance may be implemented.

The module 40 that Fig. 3 shows semiconductor device switch 10 arranges that the semiconductor device switch 10 is electrically connected to heat dissipation Device-bus 20, and be also electrically connected by printed circuit board 60 and capacitor 70.Output is by connector 80.

Stray inductance in current path leads to damped oscillation, sometimes referred to as " ringing ", and generation is switching every time After event.This oscillation is superimposed upon on supply voltage, and semiconductor device and capacitor is caused to undergo in short time interval Higher than the voltage of power supply.This will affect the rated value and service life of device, and increase the electromagnetic interference (EMI) generated by product Transmitting.By increase that semiconductor device is changed into that high impedance " shutdown " state spent from Low ESR " on " state when Between, it can reduce oscillation peak.Unfortunately, the variation from " on " state to " disconnected " state is related to semiconductor switching device Mobile by linear model, wherein resistance progressively increases to very high "off" from low-down " on ".During this period, it fills It sets meeting dissipation energy and heats.Therefore, equipment needs more cooling, or must reduce the rated current of inverter.Therefore, lead to Normal higher switching speed is preferred, but this needs low stray inductance.In practice, it needs to switching speed and heat dissipation Compromise.

The present invention provides valuable advantage in these areas, makes it possible to close to (short-range missile conducting path), such as Shown in Fig. 2 and Fig. 3, wherein the semiconductor component 10 of tight spacing is welded to one another (high by big low inductance busbar radiator 20 Heat dissipation path).10 parallel connection of semiconductor device switch is set to increase current capacity, and it is shared that achievable voltage is connected in series.Two kinds Method all has relevant management circuit clamper and buffering, for distinguishing euqalizing current and voltage.It is provided by the invention valuable The advantages of value, is, with excellent physical symmetry, the task of these equalizing circuits is mainly in component Variation.

It is provided in the inverter with matching impedance and mutually provides symmetric design, it is meant that each phase is in a similar way Operation.Symmetrically mutually greatly simplifies current/voltage control and/or reduce electric current and torque ripple.

As it will be appreciated, connecing the invention greatly improves the semiconductor switching device on extensive bus-radiator Recency, to easily provide the mechanical symmetry that there is excellent component to radiate.

In Fig. 4 a, Fig. 4 b, Fig. 4 c, the power semiconductor switch 10 of inverter sub-component 40 is welded to radiator-bus It 22,23,24,25 and is grouped to allow to carry out simple change to provide second level inverter (Fig. 4 a) or three during production Grade T-type inverter (Fig. 4 b) topological structure.

Fig. 4 c shows the midpoint DC/2 by the way that intermediate switch voltage collector to be connected to capacitor 11,12, across use In the partial pressure schematic diagram of the semiconductor device switch 10 of three-level T-type inverter.This module subgroup from three-level T-type inverter The output 17 of part is U, one in V or W phase.

In the case where the three-level T-type inverter of Fig. 4 b, intermediate power supplies voltage collector is common and passes through welding It links together on to radiator 22,24.Other suitable junctures include mechanical connection, silver or aluminium soldering gold silicon eutectic Engagement, room temperature liquid metal connection, and in all cases, engagement should realize enough mechanical and excellent heat and be electrically connected It connects.As a result, there are four radiator-bus, current potentials for each output phase are as follows:

+ dc bus 23

The intermediate switch collector 24 of current potential in capacitor 11

The intermediate switch collector 22 of current potential in capacitor 12

Output phase 27

For three voltage level T-type inverters, intermediate switch collector 22 and 24 is electrically connected by the electric bridge 9 of appropriate size.

It will be apparent to those skilled in the art that if you do not need to be amenable to the ability of two voltage level inverters, Then intermediate switch collector (radiator-bus) 22 and intermediate switch collector (radiator-bus) 24 can be single heat dissipation Device-bus.This will lead to each output phase tool, and there are three radiator-buses.

Those skilled in the art will also be seen that+DC bus radiator-bus can be shared by three phases.

With reference to Fig. 5 b, the arrangement of phase submodule 40 is shown, wherein semiconductor switch (for example, IGBT) 10 passes through heat dissipation Electric bridge 9 between device-bus 22,23,24,25 and radiator-bus 22 and 24 interconnects, and such submodule 40 is by dotted line Frame is shown, and module 40 has the appended drawing reference with their previously used meanings.In addition it is shown that associated capacitor 11,12, they are formed together the phase AC of DC to 3 inverter 200 of three-level T-type topological structure.

Fig. 5 a is the schematic diagram of the inverter submodule 40 of Fig. 5 b, it illustrates functional circuit and with capacitor 11,12 Relationship.

The two-stage topological structure inverter of Fig. 6 a, Fig. 6 b are between radiator bus with the arrangement of different bridge links 9.

In the case where the second level inverter of reference Fig. 4 a and Fig. 6 a, 24 electricity of radiator-bus of intermediate switch collector It is connected to output phase radiator-bus 25, and radiator-bus 22 of intermediate switch collector is electrically connected to and is maintained at DC+ Radiator-bus 23 of ve current potential.

It will be apparent to those skilled in the art that intermediate switch collector 24 and output phase radiator-bus 25 can be list A radiator-bus, and intermediate switch collector 22 and+DC bus radiator-bus 23 can be single radiator-mother Line, if you do not need to if the ability of three-stage inverter can be changed.This will lead to two radiator-buses of each output phase.

It is understood that the arrangement of semiconductor switching device, for example, using the second level inversion of fixed or adaptive format The IGBT on radiator bus in device or three-level T-type inverter, can still realize the close and component cloth of switching device The symmetrical precision of office and connection.

In some embodiments, radiator had not only been used for heat management but also had been used as bus to conduct electricity between the equipment of connection Stream.Therefore, radiator becomes the active part of inverter circuit, is caused matched due to short and big conducting path and reduced Inductive impedance.Common low resistance electrical interface and low thermal resistance thermal are provided using the direct solder joints that semiconductor device switchs Interface, latter aspect allow device to carry more power before heat is limited.

It, can be further by the way that the Electrical and Electronic component of inverter of the invention to be immersed in dielectric cooling medium Enhance the easiness that electric symmetry is provided under alternating current and removes heat by heat dissipation bus, wherein the dielectric is cooling is situated between Matter is pumped preferably along scheduled cooling path, and the cooling path is in the liquid closed shell comprising inverter components.

Fig. 7 shows being arranged symmetrically for semiconductor device, is bonded into convenient for electricity, heat and is mechanically connected to radiator- Bus 20, this allows the fluid path clearly limited with the narrow passage 200 clearly limited.The semiconductor device is further borrowed Help printed circuit board (not shown) and be electrically connected to thereon, additional Electrical and Electronic portion can also be installed on printed circuit board Part, so that inverter can work normally.

In Fig. 7, it can be seen that semiconductor switching device 10 (such as IGBT) is joined to radiator-bus 20 with hole Arrangement and printed circuit board and the whole device additional component (not shown)；Radiator-bus, semiconductor device are opened Close (IGBT), printed circuit board, additional Electrical and Electronic component are immersed in coolant media, wherein the cooling medium from Right side 250 enters, so that the hole 260 in radiator-bus 20 is flowed through, to remove heat from semiconductor switching device 10. For example, coolant media by can in be pumped and by push flow.

It is shown in Fig. 8 it is similar be arranged symmetrically, the semiconductor device group of attachment is attached to scattered with electricity, thermally and mechanically Hot device-bus 20 allows the fluid path clearly limited with the narrow passage 210 clearly limited.In fig. 8, it can be seen that The arrangement that semiconductor switching device 10 (IGBT) is engaged with extruded fins formula radiator-bus 20, the arrangement are immersed in cooling Jie In matter, wherein the cooling medium enters from the upper left side of array 290, is led to radiator at least along radiator-bus 20 210 part of fin channels is forward backward to be flowed back and forth, to remove heat from semiconductor switching device 10.Coolant media by In be pumped and by push flow.

Inverter system of the invention includes radiator bus, on radiator bus be attached semiconductor device switch so as to Electricity, heat and mechanical engagement, the semiconductor device are also interconnected by printed circuit board and are further electrically connected with Electrical and Electronic component It connects to form inverter and possible controller circuitry, is contained in liquid closed shell (not shown), which, which has, uses The port (not shown) that enters and leaves in coolant media and for the port (not shown) of electrical interface.Pumping coolant medium So that therefore its flowing simultaneously removes heat from the inverter system, and the coolant media is generally moved external heat friendship Parallel operation.For some applications, can be dissipated enough heats by the radiating fin being mounted or formed in the surface of shell.In In some embodiments, the intracorporal pump of the shell can move cooling medium in the closed circuit, shell fin is used only from inversion Device system removes heat.

It is dielectric fluid, such as polyalphaolefin (PAO), such as Fluroinert for coolant media of the invention^TM's Fluorine carbon flow body, coolant fluid can be single-phase or two-phase, and cooling can be originated from liquid thermal capacity or thermal evaporation, this cooling Jie Matter is well-known, and can be used for cooling down electronic component and system, for example, semiconductor device, capacitor and resistor and It is assembled into the sub-component of inverter and controller.The coolant can also be used for cooling electrically powered machine, for example, can be by the Department of Electronics System power supply/control motor/engine.

With reference to Fig. 9 a, c: Fig. 9 a of Fig. 9 b, Fig. 9 shows two individual coolant circuits, and one for controlling/power supply system It unites (for example, inverter/controller 300), and another is used for electrically powered machine (such as motor/engine 400).It is each cold But agent circuit may include heat exchanger 350, pump 360 and fluid supply/return line 370.

Fig. 9 b and Fig. 9 c show cooling configuration, and wherein single heat exchanger 350 and single pump 360 are for cooling down inversion Device/controller 300 simultaneously then cools down electrically powered machine 400.

In figure 9b, for pushing the pump 360 of cooling medium to be placed around coolant circuit along fluid line 370 Between inverter/controller 300 and electrically powered machine 400.The placement of pump is the capacity in space, easily accessible property and airport The function of (there are also other other several factors) is removed, and heat exchanger 350 and electrically powered machine 400 can be easily placed at Between (Fig. 9 c).

Determine in electrically powered machine or controller/power supply which cooled be first typically based on and dissipate when in use at most which Heat.

Unquestionably, technical staff will be appreciated that many other effective alternative solutions.It should be appreciated that the present invention is not limited to Described embodiment, and those skilled in the art including falling within the scope of the appended claims obviously modify.