阅读说明：本技术 一种多层次融合的三维系统集成结构 (Multilayer fused three-dimensional system integrated structure ) 是由 杨力宏 单光宝 朱樟明 李国良 卢启军 杨银堂 于 2019-09-12 设计创作，主要内容包括：本发明涉及一种多层次融合的三维系统集成结构,包括管壳,所述管壳的底面设置有多个管脚,所述管壳内设置有n个依次叠加的基板模块,并且,所述n个基板模块之间均设置有凸点,通过凸点将相邻的两个基板模块进行分隔；所述n个基板模块的上方还是设置有硅转接板模块,并且基板模块与硅转接板模块之间同样设置有凸点,通过凸点将基板模块与硅转接板模块进行分隔；该多层次融合的三维系统集成结构和现有单层基于TSV技术结构相比,避免了对现有单层基于TSV技术对工艺过分依赖,简化了三维集成工艺方法,提高了产品良率,节约成本。(The invention relates to a multi-level fused three-dimensional system integrated structure, which comprises a tube shell, wherein the bottom surface of the tube shell is provided with a plurality of pins, n sequentially superposed substrate modules are arranged in the tube shell, bumps are arranged among the n substrate modules, and two adjacent substrate modules are separated by the bumps; a silicon adapter plate module is also arranged above the n substrate modules, salient points are also arranged between the substrate modules and the silicon adapter plate module, and the substrate modules and the silicon adapter plate module are separated through the salient points; compared with the existing single-layer TSV technology-based structure, the multilayer fused three-dimensional system integrated structure avoids the excessive dependence on the existing single-layer TSV technology on the process, simplifies the three-dimensional integrated process method, improves the product yield and saves the cost.)

1. A multilayer fused three-dimensional system integrated structure is characterized in that: the device comprises a tube shell (1), wherein a plurality of pins (9) are arranged on the bottom surface of the tube shell (1), n sequentially-superposed substrate modules are arranged in the tube shell (1), salient points are arranged among the n substrate modules, and two adjacent substrate modules are separated by the salient points; and a silicon adapter plate module is also arranged above the n substrate modules, salient points are also arranged between the substrate modules and the silicon adapter plate module, and the substrate modules and the silicon adapter plate module are separated through the salient points.

2. The multi-level fused three-dimensional system integration structure of claim 1, wherein: the tube comprises a tube (1), the bottom surface of tube (1) is provided with a plurality of pins (9), be provided with 3 superimposed base plate modules in proper order in tube (1), be first base plate module (2), second base plate module (4), third base plate module (6) respectively, be provided with welding dish (3) between first base plate module (2) and second base plate module (4), be provided with first bump (5) between second base plate module (4) and third base plate module (6), the top of third base plate module (6) still is provided with silicon keysets module (8), is provided with second bump (7) between third base plate module (6) and silicon keysets module (8), separates third base plate module (6) and silicon keysets module (8) through second bump (7).

3. The multi-level fused three-dimensional system integration structure of claim 2, wherein: the distance between the first substrate module (2) and the second substrate module (4), the distance between the second substrate module (4) and the third substrate module (6), and the distance between the third substrate module (6) and the silicon adapter plate module (8) are different.

4. The multi-level fused three-dimensional system integration structure of claim 2, wherein: through holes are formed in the second substrate module (4) and the third substrate module (6).

5. The multi-level fused three-dimensional system integration structure of claim 2, wherein: and the first substrate module (2), the second substrate module (4), the third substrate module (6) and the silicon adapter plate module (8) are all provided with rewiring RDL layers.

6. The multi-level fused three-dimensional system integration structure of claim 2, wherein: and a cavity (11) is also arranged on the third substrate module (6).

7. The multi-level fused three-dimensional system integration structure of claim 2, wherein: and a silicon wafer through hole is also formed in the silicon adapter plate module (8).

8. The multi-level fused three-dimensional system integration structure of claim 1, wherein: the bottom surface of the tube shell (1) is also provided with a metal frame (10), and the plurality of pins (9) penetrate through the metal frame (10).

9. The multi-level fused three-dimensional system integration structure of claim 1, wherein: and an encapsulation cover plate (12) is also arranged on the upper surface of the tube shell (1).

Technical Field

The invention belongs to the technical field of semiconductor packaging, and particularly relates to a multi-level integrated three-dimensional system integrated structure.

Background

With the scale of the system integrated chip becoming larger and larger, the three-dimensional integration technology can effectively reduce the circuit board area occupied by the micro-system product in the horizontal direction, simultaneously reduce the length of the interconnection line and reduce the signal delay, so that the system has the advantages of small size, high performance and low power consumption.

For a system with high complexity, for example, if a plurality of chips (such as cpu, FPGA, CPLD, DSP, transceiver, a/D, power management, etc.) and devices (such as resistors, capacitors, etc.) need to be integrated by a single TSV technology based on all chips and devices, although the interconnection density can be increased, the area utilization rate of the circuit board is increased, thereby increasing the functional integration density of the system. However, the process technology is complicated and immature, which results in poor yield. And the adoption of the traditional planar two-dimensional integrated PCB technology of simple physical stacking of discrete devices can cause various parasitic problems and simultaneously can not meet the requirements of miniaturization, high performance, low power consumption and the like of microsystem products. Therefore, by structural design, three-dimensional integration of multi-level fusion is necessary.

Disclosure of Invention

Aiming at the problems, the invention aims to solve the problems that the existing three-dimensional system integrated structure has complex and immature process technology and cannot meet the requirements of miniaturization, high performance, low power consumption and the like of microsystem products.

Therefore, the invention provides a multilayer fused three-dimensional system integrated structure, which comprises a tube shell, wherein the bottom surface of the tube shell is provided with a plurality of pins, n substrate modules which are sequentially overlapped are arranged in the tube shell, bumps are arranged among the n substrate modules, and two adjacent substrate modules are separated by the bumps; and a silicon adapter plate module is also arranged above the n substrate modules, salient points are also arranged between the substrate modules and the silicon adapter plate module, and the substrate modules and the silicon adapter plate module are separated through the salient points.

The pipe comprises a pipe shell, the bottom surface of pipe is provided with a plurality of pins, be provided with 3 superimposed base plate modules in proper order in the pipe, be first base plate module, second base plate module, third base plate module respectively, be provided with the welding dish between first base plate module and the second base plate module, be provided with first bump between second base plate module and the third base plate module, the top of third base plate module still is provided with the silicon keysets module, is provided with the second bump between third base plate module and the silicon keysets module, separates third base plate module and silicon keysets module through the second bump.

The distance between the first substrate module and the second substrate module, the distance between the second substrate module and the third substrate module, and the distance between the third substrate module and the silicon adapter plate module are different.

And through holes are formed in the second substrate module and the third substrate module.

And the first substrate module, the second substrate module, the third substrate module and the silicon adapter plate module are all provided with rewiring RDL layers.

And the third substrate module is also provided with a cavity.

And the silicon adapter plate module is also provided with a silicon wafer through hole.

The bottom surface of the tube shell is also provided with a metal frame, and the plurality of pins penetrate through the metal frame.

And an encapsulation cover plate is also arranged on the upper surface of the tube shell.

The invention has the beneficial effects that: compared with the existing single-layer TSV technology-based structure, the multi-layer fused three-dimensional system integrated structure avoids the excessive dependence on the existing single-layer TSV technology on the process, simplifies the three-dimensional integrated process method, improves the product yield and saves the cost; compared with the traditional PCB (printed circuit board) level technical structure, the multi-level fused three-dimensional system integrated structure remarkably reduces the interconnection size between chips, is favorable for ensuring the signal integrity of high-speed digital signal transmission, is favorable for ensuring the power integrity, and avoids the problem that the PCB level technology cannot meet the requirements of micro-system performance such as miniaturization, high performance, low power consumption and the like.

The present invention will be described in further detail below with reference to the accompanying drawings.

Drawings

Fig. 1 is a first structural diagram of a three-dimensional system integrated structure with multi-level fusion.

Fig. 2 is a structural diagram of a three-dimensional system integrated structure with multi-level fusion.

In the figure: 1. a pipe shell; 2. a first substrate module; 3. welding a disc; 4. a second substrate module; 5. a first bump; 6. a third substrate module; 7. a second bump; 8. a silicon interposer module; 9 pins; 10. a metal frame; 11. a cavity; 12. and (6) packaging the cover plate.

Detailed Description

To further explain the technical means and effects of the present invention adopted to achieve the intended purpose, the following detailed description of the embodiments, structural features and effects of the present invention will be made with reference to the accompanying drawings and examples.