阅读说明：本技术 三维异质集成的柔性封装结构及制造方法 (Three-dimensional heterogeneous integrated flexible packaging structure and manufacturing method ) 是由 王楠鑫 马盛林 金玉丰 于 2021-01-14 设计创作，主要内容包括：本申请公开了一种三维异质集成的柔性封装结构及制造方法。柔性封装结构包括：第一柔性材料层上设置至少两个芯片,第一金属互联层设置在第一柔性材料层中并连接对应的芯片,第二柔性材料层设置在第一柔性材料层上并包裹芯片,导电柱设置在第二柔性材料层中并贯穿设置,导电柱连接对应的第一金属互联层,第三柔性材料层设置在第二柔性材料层上,第二金属互联层设置在第三柔性材料层中并连接对应的芯片或导电柱,第一金属互联层和第二金属互联层呈弯折状。通过设置导电柱与金属互联层,使得不同芯片可以在柔性材料中电连接,无需对芯片进行减薄,且将金属互联层设置为弯折状,在弯折拉伸的情况下不会出现断裂等失效问题。(The application discloses a three-dimensional heterogeneous integrated flexible packaging structure and a manufacturing method thereof. The flexible packaging structure includes: set up two at least chips on the first flexible material layer, first metal interconnection layer sets up in first flexible material layer and connects the chip that corresponds, the flexible material layer of second sets up on first flexible material layer and wraps up the chip, it sets up and runs through the setting to lead the electrical pillar in the flexible material layer of second, lead the electrical pillar and connect the first metal interconnection layer that corresponds, the flexible material layer of third sets up on the flexible material layer of second, the second metal interconnection layer sets up in the flexible material layer of third and connects the chip that corresponds or lead electrical pillar, first metal interconnection layer and second metal interconnection layer are the form of buckling. Through setting up and leading electrical pillar and metal interconnection layer for different chips can be connected in the flexible material electricity, need not to carry out the attenuate to the chip, and set up the metal interconnection layer into the form of buckling, can not appear fracture scheduling inefficacy problem under the tensile condition of buckling.)

1. Three-dimensional heterogeneous integrated flexible packaging structure, its characterized in that includes:

the chip packaging structure comprises a first flexible material layer, at least two chips and a second flexible material layer, wherein the first flexible material layer is provided with at least two chips;

each first metal interconnection layer is arranged in the first flexible material layer and is connected with a corresponding bonding pad of the chip;

the second flexible material layer is arranged on the first flexible material layer and wraps each chip;

at least one conductive pillar, each conductive pillar disposed in the second flexible material layer and penetrating through the second flexible material layer, and each conductive pillar connected to the corresponding first metal interconnection layer;

a third layer of flexible material disposed on the second layer of flexible material;

at least one second metal interconnection layer, each second metal interconnection layer being disposed in the third flexible material layer, each second metal interconnection layer connecting a corresponding pad of the chip or a corresponding conductive pillar;

each first metal interconnection layer and each second metal interconnection layer are bent.

2. The three-dimensional heterogeneous integrated flexible packaging structure according to claim 1, wherein each conductive pillar comprises, in order from outside to inside: a support layer, an insulating layer, a diffusion barrier layer, and a conductive layer.

3. The three-dimensional heterogeneous integrated flexible packaging structure according to claim 2, wherein the material of the support layer is polydimethylsiloxane.

4. The three-dimensional heterogeneous integrated flexible packaging structure according to claim 2, wherein the material of the insulating layer is at least one of silicon oxide, silicon nitride, aluminum oxide, benzocyclobutene, polyimide, glass, polypropylene and parylene.

5. The three-dimensional heterogeneous integrated flexible packaging structure according to claim 2, wherein the material of the diffusion barrier layer is at least one of tantalum, tantalum nitride and titanium tungsten.

6. The three-dimensional heterogeneous integrated flexible packaging structure according to claim 2, wherein the material of the conductive layer is at least one of copper, aluminum, gold and tungsten.

7. The three-dimensional heterogeneous integrated flexible packaging structure according to claim 1, wherein the first flexible material layer, the second flexible material layer and the third flexible material layer are made of at least one of copolyester or parylene.

8. The manufacturing method of the three-dimensional heterogeneous integrated flexible package is characterized by comprising the following steps:

depositing a first flexible material layer on a slide, and depositing at least one first metal interconnection layer on the first flexible material layer, wherein each first metal interconnection layer is bent;

connecting at least two chips with the corresponding first metal interconnection layers;

depositing a second layer of flexible material on the first layer of flexible material;

opening holes and depositing the second flexible material layer to obtain at least one conductive column, and enabling each conductive column to be connected with the corresponding first metal interconnection layer;

depositing at least one second metal interconnection layer on the second flexible material layer, wherein each second metal interconnection layer is bent and is connected with the corresponding bonding pad of the chip or the corresponding conductive column;

and depositing a third flexible material layer on the second flexible material layer, and stripping the carrier sheet.

9. The manufacturing method of the three-dimensional heterogeneous integrated flexible package according to claim 8, wherein the step of opening the hole and depositing the second flexible material layer to obtain the at least one conductive pillar comprises:

using a laser drilling or deep reactive ion etching process to open a hole in the second flexible material layer to obtain at least one through hole;

and filling a support layer material in each through hole, and sequentially forming an insulating layer, a diffusion barrier layer and a conductive layer by an electroplating or chemical plating method to obtain at least one conductive column.

10. The method of manufacturing a three-dimensional heterogeneous integrated flexible package according to claim 8, wherein the step of depositing a second layer of flexible material on the first layer of flexible material further comprises:

depositing a second layer of flexible material on the first layer of flexible material;

polishing the second flexible material layer by a chemical mechanical polishing method;

judging whether the chip is exposed out of the second flexible material layer or not;

and if the chip is judged to be exposed out of the second flexible material layer, stopping polishing the second flexible material layer.

Technical Field

The application relates to the technical field of microelectronic packaging, in particular to a three-dimensional heterogeneous integrated flexible packaging structure and a manufacturing method thereof.

Background

The flexible electronic product is packaged on the flexible material through the electronic device made of organic or inorganic materials, so that the flexible electronic product has good ductility and deformability, the size of the product can be reduced through folding and curling, the portability of the product is improved, and the application field of the electronic product is greatly expanded. In the related art, after a silicon-based chip is thinned, the silicon-based chip is transferred to a flexible substrate by using lead bonding, conductive adhesive bonding and other modes to manufacture a flexible electronic product, but the method cannot meet the requirements of high-density and large-batch integration, most of the methods are planar integration aiming at a single chip, and a widely applicable and high-reliability solution scheme for high-density three-dimensional integration of a plurality of chips with different heights still does not exist.

Disclosure of Invention

The present application is directed to solving at least one of the problems in the prior art. Therefore, the three-dimensional heterogeneous integrated flexible packaging structure can integrate chips with different heights on a flexible material, and meets the requirements of high-density and large-batch packaging integration.

The three-dimensional heterogeneous integrated flexible packaging structure according to the embodiment of the first aspect of the application comprises: the chip packaging structure comprises a first flexible material layer, at least two chips and a second flexible material layer, wherein the first flexible material layer is provided with at least two chips; each first metal interconnection layer is arranged in the first flexible material layer and is connected with a corresponding bonding pad of the chip; the second flexible material layer is arranged on the first flexible material layer and wraps each chip; at least one conductive pillar, each conductive pillar disposed in the second flexible material layer and penetrating through the second flexible material layer, and each conductive pillar connected to the corresponding first metal interconnection layer; a third layer of flexible material disposed on the second layer of flexible material; at least one second metal interconnection layer, each second metal interconnection layer being disposed in the third flexible material layer, each second metal interconnection layer connecting a corresponding pad of the chip or a corresponding conductive pillar; each first metal interconnection layer and each second metal interconnection layer are bent.

According to the flexible packaging structure of the embodiment of the application, at least the following beneficial effects are achieved: through setting up and leading electrical pillar and metal interconnection layer for different chips can be connected in the flexible material electricity, need not to carry out the attenuate to the chip, and set up the metal interconnection layer into the form of buckling, can not appear fracture scheduling inefficacy problem under the tensile condition of buckling.

According to some embodiments of the present application, each of the conductive pillars includes, in order from outside to inside: a support layer, an insulating layer, a diffusion barrier layer, and a conductive layer.

According to some embodiments of the present application, the material of the support layer is polydimethylsiloxane.

According to some embodiments of the application, the material of the insulating layer is at least one of silicon oxide, silicon nitride, aluminum oxide, benzocyclobutene, polyimide, glass, polypropylene, parylene.

According to some embodiments of the present application, the material of the diffusion barrier layer is at least one of tantalum, tantalum nitride, and titanium tungsten.

According to some embodiments of the application, the material of the conductive layer is at least one of copper, aluminum, gold, tungsten.

According to some embodiments of the present application, the first flexible material layer, the second flexible material layer and the third flexible material layer are all at least one of copolyester or parylene.

The manufacturing method of the three-dimensional heterogeneous integrated flexible package according to the embodiment of the second aspect of the application comprises the following steps: depositing a first flexible material layer on a slide, and depositing at least one first metal interconnection layer on the first flexible material layer, wherein each first metal interconnection layer is bent; connecting at least two chips with the corresponding first metal interconnection layers; depositing a second layer of flexible material on the first layer of flexible material; opening holes and depositing the second flexible material layer to obtain at least one conductive column, and enabling each conductive column to be connected with the corresponding first metal interconnection layer; depositing at least one second metal interconnection layer on the second flexible material layer, wherein each second metal interconnection layer is bent and is connected with the corresponding bonding pad of the chip or the corresponding conductive column; and depositing a third flexible material layer on the second flexible material layer, and stripping the carrier sheet.

According to some embodiments of the present application, the step of opening and depositing the second flexible material layer to obtain at least one conductive pillar specifically includes: using a laser drilling or deep reactive ion etching process to open a hole in the second flexible material layer to obtain at least one through hole; and filling a support layer material in each through hole, and sequentially forming an insulating layer, a diffusion barrier layer and a conductive layer by an electroplating or chemical plating method to obtain at least one conductive column.

According to some embodiments of the present application, the step of depositing a second layer of flexible material on the first layer of flexible material further comprises: depositing a second flexible material layer on the first flexible material layer, polishing the second flexible material layer by a chemical mechanical polishing method, judging whether the chip exposes the second flexible material layer, and if so, stopping polishing the second flexible material layer.

Additional aspects and advantages of the present application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the present application.

Drawings

The present application is further described with reference to the following figures and examples, in which:

FIG. 1 is a cross-sectional view of a three-dimensional heterogeneous integrated flexible package structure according to an embodiment of the present application;

FIG. 2 is a top view of a three-dimensional heterogeneous integrated flexible package structure according to an embodiment of the present application;

FIG. 3 is a flow chart of a method for manufacturing a three-dimensional heterogeneous integrated flexible package according to an embodiment of the present application;

FIG. 4 is a partial cross-sectional view of a three-dimensional heterogeneous integrated flexible package structure according to an embodiment of the present application;

FIG. 5 is another partial cross-sectional view of a three-dimensional heterogeneous integrated flexible package structure according to an embodiment of the present application;

FIG. 6 is a cross-sectional view of another portion of a three-dimensional heterogeneous integrated flexible package structure according to an embodiment of the present application;

FIG. 7 is a cross-sectional view of another portion of a three-dimensional heterogeneous integrated flexible package structure according to an embodiment of the present application;

FIG. 8 is a cross-sectional view of another portion of a three-dimensional heterogeneous integrated flexible package structure according to an embodiment of the present application;

fig. 9 is a sectional view of another part of a three-dimensional heterogeneous integrated flexible package structure according to an embodiment of the present application.

Reference numerals:

a first flexible material layer 110, a first metal interconnection layer 120, a second flexible material layer 130;

conductive pillars 140, a support layer 141, a third flexible material layer 150, and a second metal interconnection layer 160;

a carrier 170, and a through hole 180.

Detailed Description

Reference will now be made in detail to embodiments of the present application, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present application and are not to be construed as limiting the present application.

In the description of the present application, it is to be understood that the positional descriptions, such as the directions of up, down, front, rear, left, right, etc., referred to herein are based on the directions or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, and do not indicate or imply that the referred device or element must have a specific direction, be constructed and operated in a specific direction, and thus, should not be construed as limiting the present application.

In the description of the present application, the meaning of a plurality is one or more, the meaning of a plurality is two or more, and the above, below, exceeding, etc. are understood as excluding the present number, and the above, below, within, etc. are understood as including the present number. If the first and second are described for the purpose of distinguishing technical features, they are not to be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated or implicitly indicating the precedence of the technical features indicated.

In the description of the present application, unless otherwise expressly limited, terms such as set, mounted, connected and the like should be construed broadly, and those skilled in the art can reasonably determine the specific meaning of the terms in the present application by combining the detailed contents of the technical solutions.

Some embodiments, referring to fig. 1, the present application provides a three-dimensional heterogeneous integrated flexible package structure, including: the first flexible material layer 110, at least one first metal interconnection layer 120, the second flexible material layer 130, at least one conductive pillar 140, the third flexible material layer 150, and at least one second metal interconnection layer 160. At least two chips are arranged on the first flexible material layer 110, each first metal interconnection layer 120 is arranged in the first flexible material layer 110, each first metal interconnection layer 120 is connected with a pad of a corresponding chip, the second flexible material layer 130 is arranged on the first flexible material layer 110 and wraps each chip, each conductive column 140 is arranged in the second flexible material layer 130 and penetrates through the second flexible material layer 130, each conductive column 140 is connected with a corresponding first metal interconnection layer 120, the third flexible material layer 150 is arranged on the second flexible material layer 130, each second metal interconnection layer 160 is arranged in the third flexible material layer 150, each second metal interconnection layer 160 is connected with a pad of a corresponding chip or a corresponding conductive column 140, and each first metal interconnection layer 120 and each second metal interconnection layer 160 are bent.

The three-dimensional heterogeneous integrated flexible package structure of the present application is described in detail below with an exemplary embodiment of a package structure including two chips. In the figure, the heights of the two chips are significantly different, the side surfaces of the chips are fixedly connected with the chips through the second flexible material layer 130, the upper side and the lower side of each chip are respectively provided with the third flexible material layer 150 and the second flexible material layer 130, and the two chips are jointly fixed through the combination of the flexible material layers. The chip is not processed by the thinning process, so that the structural strength of the chip with the complex structure is ensured, and the chip can normally work. And in this example, the silicon-based chip is used as a functional unit, the circuit obtained by combination has excellent electrical performance. In some other embodiments, the types of the plurality of chips may be the same or different, the heights and volumes of the plurality of chips may be set arbitrarily, and chips made of other semiconductor materials may also be used.

The first flexible material layer 110 is provided with a plurality of first metal interconnection layers 120, and the first metal interconnection layers 120 are used for leading out pads located on the lower side of the chips and electrically connecting pads of different chips, so that communication between different chips is possible. The number of the first metal interconnection layers 120 can be set arbitrarily according to interconnection requirements, and when the first metal interconnection layers cannot be completely interconnected in the same layer plane, a multilayer interconnection structure can be set until all connections are completed.

The second flexible material layer 130 is provided with a plurality of conductive pillars 140, the conductive pillars 140 and the chip are arranged at intervals, and the conductive pillars 140 are used for connecting the first metal interconnection layer 120 and the second metal interconnection layer 160, so as to realize electrical connection in the vertical direction. The second metal interconnection layer 160 is disposed in the third flexible material, and may be a plurality of layers, as the first metal interconnection layer 120. When the chip height to be connected is low, a specific chip bonding pad can be connected in a mode of vertically extending the second metal interconnection layer 160, so that the purpose of leading out a chip connection point is achieved.

Referring to fig. 2, in a top view of the package structure, the second metal interconnection layer 160 is disposed in a zigzag shape, and the second metal interconnection layer 160 is extended by bending, so that the second metal interconnection layer 160 is not easily broken due to bending and stretching of the package structure during the use process after the package is completed, and the first metal interconnection layer 120 also uses the same disposing method. In some other embodiments, the bending shape of the package structure can be set at will, such as a wave shape, and the like, so that the effect of reducing the fracture can be achieved, and the service life of the package structure can be prolonged.

Through the arrangement of the conductive columns 140 and the metal interconnection layer, different chips can be electrically connected in a flexible material, flexible hybrid integration of various different devices is achieved, a flexible microsystem with complete functions is formed through encapsulation, and three-dimensional heterogeneous integration is achieved. And the chip is not required to be thinned, so that the structural function of the chip is not influenced, the metal interconnection layer is arranged to be bent, the failure problems such as fracture and the like can not occur under the bending and stretching condition, and the reliability of the packaging structure is improved.

In some embodiments, each conductive post 140 includes, in order from outside to inside: support layer 141, an insulating layer, a diffusion barrier layer, and a conductive layer. The outermost layer of the conductive posts 140 is a supporting layer 141, which plays a role of supporting the whole conductive posts 140, and when the package structure deforms in the vertical direction due to bending or stretching, the conductive posts 140 do not deform greatly, thereby preventing the device performance from being affected. The insulating layer is arranged to prevent leakage current, and the diffusion barrier layer is arranged to block metal diffusion in the conducting layer, so that the service life of the device is prolonged.

In some embodiments, the material of the support layer 141 is polydimethylsiloxane.

In some embodiments, the material of the insulating layer is at least one of silicon oxide, silicon nitride, aluminum oxide, benzocyclobutene, polyimide, glass, polypropylene, and parylene.

In some embodiments, the material of the diffusion barrier layer is at least one of tantalum, tantalum nitride, and titanium tungsten.

In some embodiments, the material of the conductive layer is at least one of copper, aluminum, gold, and tungsten.

In some embodiments, the materials of the first flexible material layer 110, the second flexible material layer 130, and the third flexible material layer 150 are all at least one of copolyester or parylene.

Some embodiments, the present application also proposes a three-dimensional heterogeneous integrated flexible package manufacturing method, referring to fig. 3, including:

210, depositing a first layer of flexible material on a slide;

220, depositing at least one first metal interconnection layer on the first flexible material layer;

230, connecting at least two chips with corresponding first metal interconnection layers;

240 depositing a second layer of flexible material on the first layer of flexible material;

250, opening and depositing the second flexible material layer to obtain at least one conductive column;

260, depositing at least one second metal interconnection layer on the second flexible material layer;

270, depositing a third flexible material layer on the second flexible material layer;

280, stripping the slide.

Specifically, referring to fig. 4, a temporary carrier 170 is first provided, a flexible material layer is deposited on the carrier 170 by at least one of plasma enhanced chemical vapor deposition, physical vapor deposition, spin coating, or spray coating, and a patterned metal layer is deposited on the flexible material layer, where the metal layer includes a plurality of first metal interconnection layers 120, and each of the patterned first metal interconnection layers 120 is bent. The first metal interconnection layer 120 in this embodiment is distributed in two layers, and referring to fig. 5, a layer of flexible material is deposited on the first metal layer, and is patterned by using an etching process to obtain a groove for depositing metal. Referring to fig. 6, a deposition process is used to deposit metal in the groove to obtain a second metal layer, where the second metal layer includes a plurality of first metal interconnection layers 120, so as to obtain a complete plurality of required first metal interconnection layers 120. Finally, a flexible material layer is deposited to obtain a complete first flexible material layer 110. The number of the first metal interconnection layers 120 may be set arbitrarily, and the manufacturing method is the same.

Referring to fig. 7, pads of the chip are respectively connected to the corresponding first metal interconnection layers 120 through a conductive adhesive, so that electrical connection is formed therebetween. In some other embodiments, the chip and the first metal interconnection layer 120 may be connected by soldering or the like. And depositing a layer of flexible material on the first flexible material layer 110 to form a second flexible material layer 130, wherein the second flexible material layer 130 wraps and fixes the chip, and the thickness of the second flexible material layer 130 can be set at will.

Referring to fig. 8, a plurality of through holes 180 are formed on the second flexible material layer 130 by using a laser or deep reactive ion etching process, so as to expose the first metal interconnection layer 120, wherein the through holes 180 are spaced apart from the chip. Referring to fig. 9, a metal is deposited in the through hole 180 by electroplating or electroless plating to form the conductive pillar 140, such that the conductive pillar 140 is electrically connected to the first metal interconnection layer 120. When the height of the chip is low, during the hole opening, the hole opening is performed at the corresponding position on the upper side of the chip, and metal is deposited to form the second metal interconnection layer 160, and the manufacturing method of the remaining second metal interconnection layers 160 is the same as the manufacturing method of the first metal interconnection layer 120, and is not described in detail herein. Then, a layer of flexible material is deposited on the second flexible material layer 130 to form a third flexible material layer 150, which serves as a passivation layer to protect the second metal interconnection layer 160 and the chip. And finally, releasing the temporary slide 170 to obtain the final finished packaging structure. And when the flexible material layer is used subsequently, the flexible material layer is windowed and is electrically connected with an external element to complete the system function.

In some embodiments, the steps of opening and depositing the second flexible material layer 130 to obtain the at least one conductive pillar 140 include: using a laser drilling or deep reactive ion etching process to open a hole in the second flexible material layer 130 to obtain at least one through hole 180; the material of the support layer 141 is filled in each through hole 180, and an insulating layer, a diffusion barrier layer and a conductive layer are sequentially formed by an electroplating or electroless plating method, so as to obtain at least one conductive pillar 140. When the through hole 180 is filled with the supporting material, the through hole 180 is filled, then a punching step is performed to obtain a hole with a relatively smaller aperture, and finally a diffusion barrier layer and a conductive layer are sequentially deposited by using an electroplating or chemical plating method, so that the conductive post 140 is manufactured. In some other embodiments, only the conductive layer may be deposited.

Some embodiments, the step of depositing a second flexible material layer 130 on the first flexible material layer 110 further comprises: depositing a second flexible material layer 130 on the first flexible material layer 110, polishing the second flexible material layer 130 by a chemical mechanical polishing method, determining whether the chip exposes the second flexible material layer 130, and if it is determined that the chip exposes the second flexible material layer 130, stopping polishing the second flexible material layer 130. When the second flexible material layer 130 is deposited, the thickness of the second flexible material layer covers the chip completely, in order to reduce the situation that the chip is connected with the second metal interconnection layer 160 only by opening holes in the second flexible material layer 130, the second flexible material layer 130 is polished in a chemical mechanical polishing mode until the top of the chip is exposed, and at this time, the thickness of the second flexible material layer 130 is the minimum thickness of the second flexible material layer. In some other embodiments, the chips may be connected by vertically extending the second metal interconnection layer 160 without polishing until the chips are exposed according to design requirements.

In the description of the present application, reference to the description of the terms "some embodiments," "illustrative embodiments," "specific examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present application. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

The embodiments of the present application have been described in detail with reference to the drawings, but the present application is not limited to the embodiments, and various changes can be made within the knowledge of those skilled in the art without departing from the gist of the present application. Furthermore, the embodiments and features of the embodiments of the present application may be combined with each other without conflict.