阅读说明：本技术 半导体封装和用于制造半导体封装的方法 (Semiconductor package and method for manufacturing semiconductor package ) 是由 R·奥特伦巴 P·弗兰克 A·海因里希 A·卢德施特克-佩希洛夫 D·佩多内 于 2020-10-27 设计创作，主要内容包括：一种半导体封装,包括：包括SiC的功率半导体芯片；包括Cu的引线框部分,其中,功率半导体芯片布置在引线框部分上；以及将功率半导体芯片电和机械地耦合到引线框部分的焊接接合部,其中,焊接接合部包括至少一种金属间相。(A semiconductor package, comprising: a power semiconductor chip including SiC; a lead frame portion including Cu, wherein the power semiconductor chip is arranged on the lead frame portion; and a solder joint electrically and mechanically coupling the power semiconductor chip to the leadframe portion, wherein the solder joint comprises at least one intermetallic phase.)

1. A semiconductor package, comprising:

a power semiconductor chip, which includes SiC,

a lead frame portion including Cu, wherein the power semiconductor chip is arranged on the lead frame portion, and

a solder joint electrically and mechanically coupling the power semiconductor chip to the leadframe portion, wherein the solder joint comprises at least one intermetallic phase.

2. The semiconductor package of claim 1, wherein the power semiconductor chip is configured to operate at a temperature of 175 ℃ or greater or at a temperature of 200 ℃ or greater.

3. A semiconductor package according to claim 1 or 2, wherein the solder joint comprises AgSnCu, AuSnCu, CuSn, NiSnCu, AgInCu, auncu, CuIn or nincu.

4. A semiconductor package according to any preceding claim, wherein the solder joint has a thickness of 10 μm or less.

5. A semiconductor package according to any preceding claim, wherein the power semiconductor chip has a thickness of 200 μ ι η or less, or 150 μ ι η or less, or 100 μ ι η or less.

6. A semiconductor package according to any preceding claim, wherein the distance between the gate oxide of the power semiconductor chip and the leadframe portion is 300 μ ι η or less, or 200 μ ι η or less, or 150 μ ι η or less, or 100 μ ι η or less, or 50 μ ι η or less.

7. The semiconductor package of any of the preceding claims, further comprising:

a NiV layer disposed between the power semiconductor chip and the solder joint, wherein the NiV layer has a thickness of 300nm or less.

8. A semiconductor package according to any preceding claim, wherein the power semiconductor chip has a first major face, an opposing second major face and side faces connecting the first and second major faces,

wherein the solder joint is disposed on and completely covers the first major face, and

wherein the weld joint is flush with all sides.

9. A method for manufacturing a semiconductor package, the method comprising:

providing a SiC semiconductor wafer comprising a plurality of power transistor circuits,

depositing a first metal layer on the SiC semiconductor wafer,

singulating the SiC semiconductor wafer into individual power semiconductor chips, each power semiconductor chip including at least one power transistor circuit,

a leadframe portion comprising Cu is provided,

arranging at least one of the power semiconductor chips on the leadframe portion such that the first metal layer faces the leadframe portion, an

Diffusion bonding the at least one power semiconductor chip to the leadframe portion such that the first metal layer and the leadframe portion form at least one intermetallic phase.

10. The method of claim 9, wherein the first metal layer comprises AgSn, AuSn, CuSn, NiSn, AgIn, AuIn, CuIn, or NiIn.

11. The method of claim 9 or 10, wherein depositing the first metal layer on the SiC semiconductor wafer comprises sputtering the first metal layer to a thickness of 1.2 μ ι η or less.

12. The method of any of claims 9 to 11, wherein diffusion bonding the at least one power semiconductor chip to the leadframe portion further comprises:

heat of 380 ℃ or higher is applied.

13. The method of any of claims 9 to 12, wherein diffusion bonding the at least one power semiconductor chip to the leadframe portion further comprises:

at 4N/mm²Or greater pressure presses the at least one power semiconductor chip onto the leadframe portion.

14. The method of any of claims 9-13, wherein the thickness of the bonding layer after diffusion welding is 4 μ ι η or less.

15. The method of any of claims 9 to 14, wherein the at least one power semiconductor chip has a thickness of 150 μ ι η or less.

Technical Field

The present disclosure generally relates to a semiconductor package and a method of manufacturing the semiconductor package.

Background

Semiconductor packages, particularly those including semiconductor chips configured to handle high voltages and/or high currents (power semiconductor chips), may generate a significant amount of heat during operation. Accordingly, it can be challenging to properly cool such semiconductor packages. Cooling may be accomplished, for example, by thermal vias including a die carrier to which the power semiconductor chip is attached. The efficiency of cooling may depend on the thermal resistance along the thermal path. Furthermore, the attachment of the power semiconductor chip to the die carrier may be done by soldering, which may however lead to solder bleeding. Solder bleed out may occupy space on the surface of the die carrier and/or may even cause short circuit failures. Improved semiconductor packages and improved methods for manufacturing semiconductor packages may help address these and other issues.

The problem on which the disclosure is based is solved by the features of the independent claims. Further advantageous examples are described in the dependent claims.

Disclosure of Invention

Various aspects relate to a semiconductor package, including: a power semiconductor chip including SiC; a lead frame portion including Cu, wherein the power semiconductor chip is arranged on the lead frame portion; and a solder joint electrically and mechanically coupling the power semiconductor chip to the leadframe portion, wherein the solder joint comprises at least one intermetallic phase.

Various aspects relate to a method for manufacturing a semiconductor package, the method including: providing a SiC semiconductor wafer comprising a plurality of power transistor circuits; depositing a first metal layer on the SiC semiconductor wafer; singulating (singulating) the SiC semiconductor wafer into individual power semiconductor chips, each power semiconductor chip comprising at least one power transistor circuit; providing a leadframe portion comprising Cu; arranging at least one of the power semiconductor chips on the leadframe portion such that the first metal layer faces the leadframe portion; and diffusion bonding the at least one power semiconductor chip to the leadframe portion such that the first metal layer and the leadframe portion form at least one intermetallic phase.

Drawings

The drawings illustrate examples and together with the description serve to explain the principles of the disclosure. Other examples and many of the intended advantages of the present disclosure will be readily appreciated as they become better understood by reference to the following detailed description. The elements of the drawings are not necessarily to scale relative to each other. Like reference numerals designate corresponding similar parts.

Fig. 1 is a schematic cross-sectional view of a semiconductor package including a SiC chip and a diffusion bond joint.

Fig. 2A to 2F are schematic cross-sectional views of a semiconductor package at various stages of manufacture according to a method for manufacturing the semiconductor package.

Fig. 3 is a cross-sectional view of a power semiconductor chip pressed down onto a leadframe portion.

Fig. 4 is a cross-sectional view of a stack including a power semiconductor chip and a plurality of metal layers.

Fig. 5 is a flowchart illustrating a method for manufacturing a semiconductor package.

Fig. 6 is a perspective view of a semiconductor package in the form of a surface mount device.

Detailed Description

In the following detailed description, reference is made to the accompanying drawings in which are shown, by way of illustration, specific examples in which the disclosure may be practiced. In this regard, directional terminology, such as "top," "bottom," "front," "back," "upper," "lower," etc., is used with reference to the orientation of the figure(s) being described. Because exemplary components can be positioned in a number of different orientations, the directional terminology is used for purposes of illustration and is in no way limiting.

As used in this specification, the terms "joined," "attached," "connected," "coupled," and/or "electrically connected/coupled" are not meant to imply that elements or layers must be in direct contact together; intermediate elements or layers may be provided between elements that are "bonded," "attached," "connected," "coupled," and/or "electrically connected/coupled," respectively. However, in accordance with the present disclosure, the above terms may optionally also have the specific meaning that elements or layers are in direct contact together, i.e., no intervening elements or layers are provided between the elements that are "joined," "attached," "connected," "coupled" and/or "electrically connected/coupled," respectively.

The power semiconductor chip mentioned herein may have a vertical structure, that is, the semiconductor chip may be manufactured in such a manner that current may flow in a direction perpendicular to a main surface of the semiconductor chip. A semiconductor chip having a vertical structure has electrodes on both main surfaces thereof. The vertical power semiconductor chip may be configured, for example, as a power MOSFET (metal oxide semiconductor field effect transistor), an IGBT (insulated gate bipolar transistor), a JFET (junction field effect transistor), a power bipolar transistor or a power diode. As an example, the source contact electrode and the gate contact electrode of the power MOSFET may be located on one main surface, while the drain contact electrode of the power MOSFET may be arranged on the other main surface.

The power semiconductor chip(s) may be covered with an encapsulation material. The encapsulating material may be electrically insulating. The encapsulating material may comprise or be made of any suitable plastic or polymer material, such as a hard plastic, thermoplastic or thermosetting material or a laminate (prepreg), and may for example comprise a filler material. Various techniques may be employed to encapsulate the semiconductor chip with the encapsulating material, such as compression molding, injection molding, powder molding, liquid molding, or lamination. Heat and/or pressure may be used to apply the encapsulating material.

Fig. 1 shows a semiconductor package 100 including a power semiconductor chip 110, a leadframe portion 120, and a solder joint 130.

The power semiconductor chip 110 is a SiC chip, which means that the semiconductor material included in the power semiconductor chip 110 is SiC. The power semiconductor chip 110 may have a first main side 111 facing the leadframe portion 120 and an opposite second main side 112. The power semiconductor chip 110 may further comprise a side 113 connecting the first main side 111 and the second main side 112.

According to an example, the power semiconductor chip 110 may comprise a vertical transistor structure, wherein a first (power) electrode is arranged on the first main side 111 and a second (power) electrode is arranged on the second main side 112. For example, the first (power) electrode may be a drain electrode and the second (power) electrode may be a source electrode. The reverse is also possible. Furthermore, a control electrode like a gate electrode may be arranged on e.g. the second main side 112.

The power semiconductor chip 110 may be thin. The power semiconductor chip 110 may for example have a thickness of 350 μm or less, or 250 μm or less, or 150 μm or less, or 100 μm or less, or 50 μm or less measured between the first main side 111 and the second main side 112. The distance of the epitaxial layers of the power semiconductor chip 110 to the leadframe portion may be 300 μm or less, or 200 μm or less, or 150 μm or less, or 100 μm or less, or 50 μm or less. The main sides 111, 112 may for example each have a diameter of 1mm²To 25mm²Surface area within the range. The main sides 111, 112 may have a substantially rectangular or square shape.

The leadframe portion 120 may include Cu. The lead frame portion 120 may also be entirely composed of Cu. According to another example, the leadframe portion 120 may include or be composed of Ag, Au, or Ni.

The leadframe portion 120 may, for example, have a thickness (measured perpendicular to the major sides 111, 112) of 0.2mm or greater, or 0.5mm or greater, or 1.0mm or greater, or 1.5mm or greater. The ratio of the thickness of the leadframe portion 120 to the thickness of the power semiconductor chip 110 may be about 5, about 10, about 15, or about 20.

The leadframe portion 120 may be a die carrier. The power semiconductor chip 110 may be arranged on the leadframe portion 120 alone or more than one (power) semiconductor chip according to another example. Manufacturing the semiconductor package 100 may include stamping or cutting the lead frame to obtain the lead frame portion 120.

According to an example, the semiconductor package 100 may include one or more additional leadframe portions. One or more additional lead frame portions may be electrically insulated from the lead frame portion 120. One or more additional leadframe portions may be electrically coupled to the power semiconductor chip 110. The one or more additional leadframe portions may, for example, comprise external leads of the semiconductor package 100.

Solder joints 130 electrically and mechanically couple the power semiconductor chip 110 to the leadframe portion 120. The weld joint 130 includes at least one intermetallic phase or compound. The solder joint 130 may be a diffusion solder joint (i.e., a solder joint formed by a diffusion welding process). The solder joint 130 may, for example, comprise or consist of an intermetallic compound, for example AgSnCu or AuSnCu or CuSn or NiSnCu or AgInCu or auncu or CuIn or niancu.

The solder joint 130 may have a thickness (measured perpendicular to the major sides 111, 112) of 20 μm or less, or 10 μm or less, or 5 μm or less. According to one example, the solder joint 130 may have a thickness in a range of 2 μm to 4 μm. A thin solder joint 130 may have a lower thermal resistance than a thick solder joint. Accordingly, heat generated by the power semiconductor chip 110 may be more easily dissipated via the solder joint 130 and the lead frame portion 120. Further, a thin solder joint 130 may be less prone to solder bleed-out.

According to an example, the ratio of the thickness of the power semiconductor chip 110 to the thickness of the solder joint 130 may be 10 or more, 20 or more, 50 or more, or 100 or more.

The solder joint 130 may completely cover the first main side 111. According to an example, the weld joint 130 may be flush with all sides 113. In particular, the semiconductor package 100 may not have any solder bleed. According to another example, there may be some solder bleed on at least one of the sides 113.

Fig. 2A-2F illustrate the semiconductor package 100 at various stages of manufacture according to a method of manufacturing the semiconductor package.

As shown in fig. 2A, a semiconductor wafer 200 including a plurality of power transistor circuits 210 is provided. The semiconductor wafer 200 includes or consists of SiC. The power transistor circuits 210 may each include a vertical transistor structure, and may each include, for example, a source electrode, a drain electrode, and a gate electrode. The drain electrode may, for example, be arranged on a first main side 201 of the semiconductor wafer 200, and the source electrode and the gate electrode may, for example, be arranged on an opposite second main side 202 of the semiconductor wafer 200.

As shown in fig. 2B, a first metal layer 220 is deposited on the semiconductor wafer 200. A first metal layer 220 may be deposited on the first main side 201. The first metal layer 220 may completely cover the first main side 201. The first metal layer 220 may include a solder material suitable for diffusion soldering, such as AgSn, AuSn, CuSn, NiSn, AgIn, CuIn, or nin. First metal layer 220 may be deposited on semiconductor wafer 200 using any suitable deposition technique, such as dispensing, (chemical) vapor deposition, sputtering, and the like.

As shown in fig. 2C, the semiconductor wafer 200 is singulated into individual power semiconductor chips 110, wherein each power semiconductor chip 110 includes at least one power transistor circuit 210. The first main side 111 of the singulated power transistor chips 110 may be (completely) covered by the first metal layer 220. Singulation may include, for example, cutting the semiconductor wafer 200 along the dicing lines, either mechanically or using a laser. In addition, the first metal layer 220 may be diced at the same time as the semiconductor wafer 200. The side 113 of the singulated power semiconductor chip 110 may include some contamination of the material of the first metal layer 220. Similarly, first metal layer 220 may include some contamination of the material of semiconductor wafer 200 at side 113.

As shown in fig. 2D, a leadframe portion 120 is provided. The leadframe portion 120 may include or be composed of Cu. Providing the lead frame portions 120 can optionally include cutting or stamping the lead frame portions from a strip of lead frames.

As shown in fig. 2E, at least one of the power semiconductor chips 110 is disposed on the lead frame part 120 such that the first metal layer 220 faces the lead frame part 120. Arranging the power semiconductor chips 110 on the leadframe portion 120 may, for example, include using a pick and place process.

As shown in fig. 2F, at least one power semiconductor chip 110 is diffusion bonded to the leadframe portion 120, thereby forming a solder joint 130. The solder joint 130 may be composed of the material of the first metal layer 220 and the material of the leadframe portion 120, which together form at least one intermetallic phase.

At least some or all of the processes described with respect to fig. 2A-2F may be performed in a controlled atmosphere. For example, N comprising 88% may be used₂And 12% of H₂Of the atmosphere (c). The controlled atmosphere may, for example, help prevent oxidation of Cu.

According to an example, diffusion soldering the at least one power semiconductor chip 110 to the leadframe portion 120 may further comprise applying heat of 380 ℃ or higher. For example, the power semiconductor chip 110, the first metal layer 220, and the lead frame portion 120 as shown in fig. 2E may be placed in an oven and heated to 380 ℃ or higher. The exact temperature to be used may depend, for example, on the material combination of the first metal layer 220 and the leadframe portion 120 and/or on the desired length of time of the diffusion bonding process.

Fig. 3 shows a press 300 configured to press the power semiconductor chip 110 and the first metal layer 220 onto the leadframe portion 120. Diffusion bonding the power semiconductor chips 110 to the leadframe portion 120, such as described with respect to fig. 2A-2F, may optionally include pressing at least one power semiconductor chip 110 onto the leadframe portion 120. This may be done, for example, using press 300.

The press 300 may, for example, be configured to apply 1N/mm²Or larger, 2N/mm²Or larger, 3N/mm²Or greater, or 4N/mm²Or greater pressure. Since the power semiconductor chip 110 is a SiC chip, it can withstand much higher pressures without being damaged than, for example, a Si chip.

Pressing the power semiconductor chip 110 and the first metal layer 220 onto the leadframe part 120 may be performed, for example, while applying heat as described above. The heat and pressure in tandem may promote the formation of at least one intermetallic phase. Higher pressures may reduce the length of time required for the diffusion bonding process.

According to an example, the press 300 may be part of a pick and place device configured to place the power semiconductor chips 110 onto the leadframe portions 120. In other words, the placing of the power semiconductor chip 110 onto the leadframe portion 120 and the pressing down of the power semiconductor chip 110 onto the leadframe portion 120 may be performed by the press 300.

According to another example, the power semiconductor chip 110 is picked up and placed onto the lead frame portion 120 by a device different from the press 300, and the press 300 is used only after the power semiconductor chip 110 has been placed onto the lead frame portion 120.

Fig. 4 shows a stack 400 comprising the power semiconductor chip 110, the first metal layer 220 and at least one additional metal layer. One or more additional metal layers may be arranged between the power semiconductor chip 110 and the first metal layer 220. The stack 400 may be included in the semiconductor package 100.

The one or more additional metal layers may have various functions and may, for example, be configured as a diffusion barrier layer, a seed layer, an adhesion layer, and the like. The one or more additional metal layers may comprise any suitable metal or metal alloy.

According to an example, the stack 400 may comprise a first additional metal layer 402 which may directly adjoin the power semiconductor chip 110. The first additional metal layer 402 may, for example, comprise or consist of TiSi.

According to an example, stack 400 may include a second additional metal layer 404. Second additional metal layer 404 may directly abut first additional metal layer 402. Second additional metal layer 404 may, for example, comprise or consist of NiV.

According to an example, the stack 400 may comprise a third additional metal layer 406. The third additional metal layer 406 may directly abut the second additional metal layer 404. The third additional metal layer 406 may, for example, comprise or consist of Al.

According to an example, the stack 400 may comprise a fourth additional metal layer 408. The fourth additional metal layer 408 may directly abut the third additional metal layer 406. The fourth additional metal layer 408 may, for example, comprise or consist of Ti. The first metal layer 220 may directly abut the fourth additional metal layer 408.

According to another example, the stack 400 may comprise only one, two or three of the additional metal layers 402 to 408. For example, stack 400 may include first additional metal layer 402, second additional metal layer 404, and fourth additional metal layer 408, but not third metal layer 406. In this case, the fourth additional metal layer 408 may directly abut the second additional metal layer 404.

Furthermore, the separate additional metal layers 402-408 need not necessarily include the exemplary metals described above, but may include one or more other suitable metals. The individual additional metal layers 402-408 may have any suitable thickness, for example, each layer may have a thickness in the range of 100nm to 300 nm.

Fig. 5 is a flow chart of a method 500 for manufacturing a semiconductor package. The method 500 may be used, for example, to fabricate the semiconductor package 100.

The method 500 includes: providing a SiC semiconductor wafer comprising a plurality of power transistor circuits at 501; depositing a first metal layer on the SiC semiconductor wafer at 502; singulating 503 the SiC semiconductor wafer into individual power semiconductor chips, each power semiconductor chip including at least one power transistor circuit; providing a leadframe portion comprising Cu at 504; arranging at least one power semiconductor chip on the leadframe portion such that the first metal layer faces the leadframe portion at 505; and diffusion bonding at least one power semiconductor chip to the leadframe portion at 506 such that the first metal layer and the leadframe portion form at least one intermetallic phase.

According to an example of method 500, depositing 502 a first metal layer on a SiC semiconductor wafer may include using a sputtering technique, a dispensing technique, a (chemical) vapor deposition technique, or any other suitable technique known in the art. The first metal layer may, for example, be deposited such that it has a thickness of 1.2 μm or less.

The method 500 may optionally include applying heat and/or pressure during the diffusion bonding 506 of the at least one power semiconductor chip. For example, heat of 380 ℃ or higher and/or 4N/mm may be applied²Or greater pressure is applied to the first metal layer.

Fig. 6 is a perspective view of a semiconductor package 600, which may be similar or identical to semiconductor package 100.

The semiconductor package 600 includes all of the components described with respect to the semiconductor package 100, and it also includes an encapsulation 602 and external contacts 604. The envelope 602 may be, for example, a molded body or a laminated body. The external contact 604 may be, for example, part of a lead frame. The power semiconductor chip may be electrically coupled to one or more of the external contacts 604.

The semiconductor package 600 may optionally include a metal plate 606. The metal plate 606 may be the same as the lead frame portion 120. The metal plate 606 may be at least partially exposed at the encapsulation 602, and it may be configured to help dissipate heat generated by the power semiconductor chip 110 and/or to electrically contact the power electrodes of the power semiconductor chip 110 from the outside.

According to one example, the semiconductor package 600 may be a Surface Mounted Device (SMD). However, the semiconductor package 600 may also be a Through Hole Device (THD). Semiconductor package 600 may be a standardized Transistor Outline (TO) package, such as a TO 263-7 type package.

Examples of the invention

Hereinafter, the semiconductor package and the method for manufacturing the semiconductor package are further described using specific examples.

Example 1 is a semiconductor package, comprising: a power semiconductor chip including SiC; a lead frame portion including Cu, wherein the power semiconductor chip is arranged on the lead frame portion; and a solder joint electrically and mechanically coupling the power semiconductor chip to the leadframe portion, wherein the solder joint comprises at least one intermetallic phase.

Example 2 is the semiconductor package of example 1, wherein the power semiconductor chip is configured to operate at a temperature of 175 ℃ or more or at a temperature of 200 ℃ or more.

Example 3 is the semiconductor package of example 1 or 2, wherein the solder joint comprises AgSnCu, AuSnCu, CuSn, NiSnCu, AgInCu, auncu, CuIn, or nincu.

Example 4 is the semiconductor package of one of the foregoing examples, wherein the solder joint has a thickness of 10 μm or less.

Example 5 is the semiconductor package of one of the preceding examples, wherein the power semiconductor chip has a thickness of 200 μm or less, or 150 μm or less, or 100 μm or less.

Example 6 is the semiconductor package of one of the preceding examples, wherein a distance between the gate oxide of the power semiconductor chip and the leadframe portion is 300 μm or less, or 200 μm or less, or 150 μm or less, or 100 μm or less, or 50 μm or less.

Example 7 is the semiconductor package of one of the preceding examples, further comprising a NiV layer disposed between the power semiconductor chip and the solder joint, wherein the NiV layer has a thickness of 300nm or less.

Example 8 is the semiconductor package of one of the preceding examples, wherein the power semiconductor chip has a first major face, an opposing second major face, and side faces connecting the first and second major faces, wherein the solder joint is disposed on and completely covers the first major face, and wherein the solder joint is flush with all side faces.

Example 9 is a method for manufacturing a semiconductor package, the method comprising: providing a SiC semiconductor wafer comprising a plurality of power transistor circuits; depositing a first metal layer on the SiC semiconductor wafer; singulating the SiC semiconductor wafer into individual power semiconductor chips, each power semiconductor chip including at least one power transistor circuit; providing a leadframe portion comprising Cu; arranging at least one of the power semiconductor chips on the leadframe portion such that the first metal layer faces the leadframe portion; and diffusion bonding the at least one power semiconductor chip to the leadframe portion such that the first metal layer and the leadframe portion form at least one intermetallic phase.

Example 10 is the method of example 9, wherein the first metal layer comprises AgSn, AuSn, CuSn, NiSn, AgIn, AuIn, CuIn, or NiIn.

Example 11 is the method of example 9 or 10, wherein depositing the first metal layer on the SiC semiconductor wafer comprises sputtering the first metal layer to a thickness of 1.2 μm or less.

Example 12 is the method of one of examples 9 to 11, wherein diffusion bonding the at least one power semiconductor chip to the leadframe portion further comprises applying heat at 380 ℃ or higher.

Example 13 is the method of one of examples 9 to 12, wherein diffusion bonding at least one power semiconductor chip to the leadframe portion further comprises: at 4N/mm²Or greater pressure presses the at least one power semiconductor chip onto the leadframe portion.

Example 14 is the method of one of examples 9 to 13, wherein a bond line (bond line) thickness after the diffusion soldering is 4 μm or less.

Example 15 is the method of one of examples 9 to 14, wherein the at least one power semiconductor chip has a thickness of 150 μ ι η or less.

Example 16 is the semiconductor package of one of examples 1 to 8, wherein the leadframe portion has a thickness of 0.5mm or more.

Example 17 is the semiconductor package of example 1, wherein the solder joint is a diffusion solder joint.

Example 19 is an apparatus comprising means for performing a method according to one of examples 9 to 15.

Although the present disclosure has been illustrated and described with respect to one or more implementations, alterations and/or modifications may be made to the illustrated examples without departing from the spirit and scope of the appended claims. In particular regard to the various functions performed by the above described components or structures (assemblies, devices, circuits, systems, etc.), the terms (including a reference to a "means") used to describe such components are intended to correspond, unless otherwise indicated, to any component or structure which performs the specified function of the described component (e.g., that is functionally equivalent), even though not structurally equivalent to the disclosed structure which performs the function in the herein illustrated exemplary implementations of the disclosure.