阅读说明：本技术 用于高功率半导体器件的射流冲击冷却 (Jet impingement cooling for high power semiconductor devices ) 是由 J·E·盖勒维 于 2020-09-29 设计创作，主要内容包括：本公开涉及用于高功率半导体器件的射流冲击冷却。本公开提供了一种用于半导体器件的射流冲击冷却组件,该射流冲击冷却组件包括热交换基部,该热交换基部具有入口室和出口室。入口连接可与该入口室流体连接,而出口连接可与该出口室流体连接。射流板可耦接到该入口室,并且射流基座可形成在该射流板上并具有凸起表面,该凸起表面中形成有射流喷嘴。(The present disclosure relates to jet impingement cooling for high power semiconductor devices. The present disclosure provides a jet impingement cooling assembly for a semiconductor device, the jet impingement cooling assembly comprising a heat exchange base having an inlet chamber and an outlet chamber. An inlet connection may be in fluid connection with the inlet chamber and an outlet connection may be in fluid connection with the outlet chamber. A jet plate can be coupled to the inlet chamber, and a jet base can be formed on the jet plate and have a raised surface with a jet nozzle formed therein.)

1. A jet impingement cooling assembly for a semiconductor device, comprising:

a heat exchange base having an inlet chamber and an outlet chamber;

an inlet connection in fluid connection with the inlet chamber;

an outlet connection in fluid connection with the outlet chamber;

a fluidic plate coupled to the inlet chamber; and

a jet base formed on the jet plate and having a raised surface with a jet nozzle formed therein.

2. The jet impingement cooling assembly for semiconductor devices of claim 1, wherein the heat exchange base is configured to receive a semiconductor module comprising at least one semiconductor device having a front side facing away from the inlet chamber and a back side facing the jet plate.

3. The jet impingement cooling assembly for semiconductor devices of claim 1, wherein the jet pedestal has a first configuration on the jet plate, and further wherein the jet plate is interchangeable with a second jet plate within the heat exchange base, wherein at least a second pedestal has a second configuration.

4. The jet impingement cooling assembly for semiconductor devices of claim 1, further comprising a chamber divider within the heat exchange base and defining the inlet chamber on a first side of the heat exchange base and the outlet chamber on a second side of the heat exchange base, the chamber divider coupled to the heat exchange base and configured to receive the jet plate.

5. The jet impingement cooling assembly for semiconductor devices of claim 1, further comprising a chamber divider within the heat exchange base and defining the inlet chamber on a first side of the heat exchange base and the outlet chamber on a second side of the heat exchange base, the chamber divider coupled to the jet plate and configured to be received with the jet plate within the heat exchange base.

6. The jet impingement cooling assembly for semiconductor devices of claim 1, wherein the jet pedestal is removable from the jet plate and interchangeable with a second jet pedestal having a second jet nozzle that is a different size than the jet nozzle.

7. A fluidic plate assembly for fluidic impingement cooling of semiconductor devices, comprising:

a flow jet plate configured to be received within a heat exchange base; and

a fluidic base formed on the fluidic plate and having at least one fluidic nozzle formed within a raised surface that is raised from a surface of the fluidic plate by at least one fluidic base wall connecting the fluidic plate to the raised surface,

wherein the jet plate, when received within the heat exchange base, defines a fluid flow path from the inlet chamber of the heat exchange base, through the jet nozzle, and through a return path defined by the at least one jet base wall to the outlet chamber of the heat exchange base.

8. The fluidic plate assembly for fluidic impingement cooling of a semiconductor device of claim 7, wherein the fluidic plate is configured to be coupled to at least one wall of the heat exchange base and to a chamber divider of the heat exchange base separating the inlet chamber and the outlet chamber.

9. The fluidic plate assembly for fluidic impingement cooling of semiconductor devices of claim 7, wherein as part of said fluid flow path, said fluidic pedestal is positioned on said fluidic plate to cause fluidic flow from said inlet chamber to impinge through said fluidic nozzle and onto a backside of a semiconductor device mounted on a semiconductor module coupled to said heat exchange base.

10. A method of fabricating a jet impingement cooling assembly for a semiconductor device, comprising:

forming a heat exchange base having an inlet chamber and an outlet chamber;

forming an inlet connection in fluid connection with the inlet chamber;

forming an outlet connection in fluid connection with the outlet chamber;

forming a jet plate configured to be coupled to the inlet chamber; and

a jet base is formed on the jet plate and has a raised surface with a jet nozzle formed therein.

11. The method of claim 10, further comprising:

forming the fluidic base as a trapezoidal prism.

12. The method of claim 10, further comprising:

a chamber divider is formed within the heat exchange base, the chamber divider separating the inlet chamber from the outlet chamber, and the chamber divider is configured to receive the jet plate.

Technical Field

This specification relates to cooling techniques for semiconductor devices.

Background

High power semiconductor devices generate heat during operation, which heat may be harmful to the device itself or nearby components. For example, excessive heat may cause sudden device failure or may result in reduced device lifetime.

To alleviate this potential difficulty, high power semiconductor devices may be cooled using a liquid cooling system. For example, a pump may be used to direct a flow of water or other suitable cooling liquid to the high heat zone, thereby facilitating heat transfer from the high heat zone to the cooling liquid.

Disclosure of Invention

According to one general aspect, a jet impingement cooling assembly for a semiconductor device includes a heat exchange base having an inlet chamber and an outlet chamber. The inlet connection may be in fluid connection with the inlet chamber and the outlet connection may be in fluid connection with the outlet chamber. A jet plate can be coupled to the inlet chamber, and a jet base can be formed on the jet plate and have a raised surface with a jet nozzle formed therein.

According to another general aspect, a fluidic plate assembly for fluidic impingement cooling of semiconductor devices may include: a fluidic plate configured to be received within a heat exchange base; and a jet base formed on the jet plate and having at least one jet nozzle formed in a raised surface that is raised from the jet plate surface by at least one jet base wall connecting the jet plate to the raised surface. The jet plate, when received within the heat exchange base, can define a fluid flow path from the inlet chamber of the heat exchange base, through the jet nozzle, and through a return path defined by the at least one jet base wall to the outlet chamber of the heat exchange base.

According to another general aspect, a method of fabricating a jet impingement cooling assembly for a semiconductor device may comprise: forming a heat exchange base having an inlet chamber and an outlet chamber; forming an inlet connection in fluid connection with the inlet chamber; and forming an outlet connection in fluid connection with the outlet chamber. The method can comprise the following steps: forming a fluidic plate configured to be coupled to the inlet chamber; and forming a jet base on the jet plate, and the jet base having a raised surface with a jet nozzle formed therein.

The details of one or more implementations are set forth in the accompanying drawings and the description below. Other features will be apparent from the description and drawings, and from the claims.

Drawings

Fig. 1 is an exemplary exploded view of a jet impingement cooling assembly for high power semiconductor devices, wherein the electronic module is lifted off the heat exchanger.

FIG. 2 is a cross-sectional view of the jet impingement cooling assembly of FIG. 1.

FIG. 3 is another view of the heat exchanger base of the jet impingement cooling assembly of FIG. 1.

Fig. 4A illustrates an exemplary fluidic plate that may be used in conjunction with the exemplary embodiments of fig. 1-3.

Fig. 4B illustrates an example of an interchangeable fluidic base that may be used with the example fluidic plate of fig. 4A.

Fig. 5 is an example of a heat exchanger base showing an alternative fluid exit direction.

Fig. 6 illustrates an exemplary fluidic plate that can be used in conjunction with the example of fig. 5, illustrating flexibility in the number and location of fluidic nozzles.

FIG. 7 is an assembled view of the example jet impingement cooling assembly of FIG. 5 with the example jet plate of FIG. 6 installed therein.

Fig. 8 illustrates another exemplary fluidic plate for cooling three electronic packages.

FIG. 9A illustrates another exemplary embodiment of the jet impingement cooling assembly of FIG. 1 using the exemplary jet plate of FIG. 8.

Fig. 9B is another exemplary view of the example of fig. 9A.

Fig. 9C is an exemplary cross-sectional view of the example of fig. 9A and 9B.

FIG. 10 is a flow chart illustrating an exemplary manufacturing process for manufacturing a jet impingement cooling assembly, according to exemplary embodiments described herein.

FIG. 11 shows a graph demonstrating the improved cooling provided by the various embodiments described herein compared to conventional techniques.

Detailed Description

As described in detail below, embodiments include a heat exchange assembly for performing jet impingement cooling of a semiconductor power module. In an exemplary embodiment, the high-speed, high-pressure application of the cooling liquid to the identified hot spots of the semiconductor power module may be guided with high accuracy and/or high precision.

The described jet impingement heat exchange (cooling) assembly embodiments provide uniform pressure at each jet nozzle or discharge outlet of a potential plurality of jet nozzles or discharge outlets, thereby providing uniform cooling to a corresponding plurality of hot spots. Jet impingement cooling assemblies are effective because jet impingement occurs at least at (e.g., only at) desired and necessary hot spots. Jet impingement cooling assembly embodiments provide direct contact of a cooling fluid with a backside of a substrate to be cooled, such as a Directly Bonded Copper (DBC) substrate (e.g., a substrate including a dielectric disposed between a pair of metal layers for tracking and/or bonding).

The described embodiments provide a jet nozzle or exhaust port near the surface of the substrate to be cooled, which defines a relatively narrow gap between the jet nozzle and the substrate. Thus, a high-speed, high-pressure flow of the cooling liquid onto the desired hot spot occurs. A relatively large gap adjacent the jet nozzle can be provided to achieve a relatively low velocity low pressure flow that can be used for semiconductor chips or other devices with lower thermal profiles (e.g., diodes), and/or can be used to efficiently return the flow of cooling fluid to the fluid pump.

A semiconductor power module may include a plurality of semiconductor dies (e.g., chips) or other devices, some of which may generate higher heat during operation than others. Even for semiconductor power modules that include the same or similar semiconductor chips therein, the individual semiconductor chips may be placed (e.g., coupled) at different locations within or on the module.

Thus, the jet impingement cooling assembly embodiments described herein are highly configurable and may be configured to align jet impingement cooling with a given semiconductor chip or other element requiring cooling. For example, a single base may be compatible with multiple interchangeable fluidic plates, where different fluidic plates may be configured to match the hot spots of corresponding semiconductor power modules.

In certain examples, the jet impingement cooling assembly described may be used for cooling in the context of an automotive or other engine application. Such applications typically have high power requirements in high temperature environments while also meeting safety regulations.

Fig. 1 is an exemplary exploded view of a jet impingement cooling assembly for high power semiconductor devices. In fig. 1, the heat exchange base 102 comprises an inlet connection 104 and an outlet connection 106, which may be in fluid contact with a fluid pump (not shown in fig. 1). Thus, a fluid flow (such as a water flow) may be maintained through the inlet connection 104, through one or more cavities (described below) within the heat exchange base 102, and out the outlet connection 106. In fig. 1, the heat exchange base 102 is shown as having the shape of a rectangular prism, but exemplary embodiments may utilize any suitable shape, such as, for example, a cubical or rectangular housing.

The flow plate 108 may be positioned within the heat exchange base 102. For example, the heat exchange base 102 can include a chamber divider 109 that divides the interior of the heat exchange base 102 into an inlet chamber (not visible in fig. 1, but shown, for example, as inlet chamber 202 in fig. 2) and an outlet chamber 134, as described below.

For example, the flow plates 108 may be mountable within and removable from the heat exchange base 102. Thus, a plurality of flow plates 108 having various desired configurations may be interchanged with respect to a single heat exchange base 102. In some examples, the fluidic plate 108 may be separate from and mounted to the chamber divider 109. In other embodiments, the fluidic plate 108 may be integral with the chamber partition 109 and may be inserted and/or removed in conjunction therewith.

Flow plate 108 may include a raised jet base 110 that includes a jet discharge or nozzle 112, as shown in the cross-sectional view of FIG. 2. Flow plate 108 also includes a jet base 114 that includes a jet nozzle 116. In other words, fluidic bases 110, 114 each have a convex surface in which a corresponding fluidic nozzle 112, 116 is formed. Although the example of fig. 1 shows a fluidic plate 108 having two fluidic bases 110, 114, other exemplary embodiments of fluidic plate 108 may include a single fluidic base, or may include three or more fluidic bases.

The jet nozzle 112 provides a discharge, gap, or opening through which pressurized fluid flowing through the inlet connection 104 is forced, such fluid being shown as high velocity fluid flow 118. Similarly, the jet nozzle 116 also provides a vent, gap, or opening through which pressurized fluid flowing through the inlet connection 104 is forced, such fluid being shown as high velocity fluid flow 120. Thus, the jet plate 108 forms a sealed connection with the chamber partition 109 and with the heat exchange base 102 such that any fluid received through the inlet connection 104 is pushed through the jet nozzles 112, 116.

Semiconductor power module 122 may include a circuit board or other assembly of multiple semiconductor chips or other devices, generally shown in fig. 1 as devices 124, 126, 128, and 130. As described above, some of the semiconductor power module devices 124-130 may have high thermal profiles, while others may require little or no cooling. In view of the example of fig. 1, devices 124 and 126 are assumed to have high thermal profiles and form relatively hot spots, while devices 128, 130 are assumed to have low thermal profiles and require little cooling.

Then, as described above, and as shown in fig. 1, the heat exchange base 102 is configured to receive the semiconductor power module 122 such that the fluidic nozzles 112, 116 may be positioned directly below the devices 124, 126, respectively, when the semiconductor power module 122 is attached to the heat exchange base 102. Thus, the fluid flow from the inlet connection 104 may be pushed through the fluidic nozzles 112, 116, and may then directly impinge on the respective back faces of the devices 124, 126. This approach provides efficient and direct cooling of the devices 124, 126.

After such jets impinge on the devices 124, 126, the fluid flow may continue through the relatively wide fluid return channel defined between the jet seats 110, 114 or between one of the jet seats 110, 114 and at least one wall of the heat exchange base 102. For example, in fig. 1, a relatively low velocity fluid flow 131 is shown as occurring within a wide gap or channel 132 defined between fluidic bases 110, 114. When attached to the heat exchange base 102, the return fluid flow may also be constrained by the presence of the semiconductor power module 122.

As shown in fig. 1, the return fluid flow may continue through the outlet chamber 134 and then through the outlet connection 106, returning to the fluid pump in use. In some embodiments, the presence of the return fluid flow through the outlet chamber 134 may provide additional cooling to the devices 128, 130 of the semiconductor power module 122. That is, in the example of fig. 1, it may be assumed that devices 128, 130 require significantly less cooling than devices 124, 126, such that the associated cooling requirements may be met without requiring the type of jet impingement described with respect to devices 124, 126.

FIG. 2 is a cross-sectional view of the jet impingement cooling assembly of FIG. 1. In fig. 2, the inlet chamber 202 is visible, and the fluid flow is shown in more detail.

In particular, inlet fluid flow 204 is shown as transitioning to pressurized flows 206, 208, which are discharged through jet nozzles 112, 116, respectively. The return fluid flow is shown in fig. 2 as a relatively low velocity flow 210 traveling between the jet seats 110 and the walls of the heat exchange base 102, and a relatively low velocity flow 212 traveling between the jet seats 110, 114.

Fig. 3 is another view of the heat exchanger housing of fig. 1. In the embodiment of fig. 3, a chamber partition 302 is shown that corresponds to the embodiment of the chamber partition 109 of fig. 1. That is, as described above, the chamber partition 109 of fig. 1 may represent a partition that is integrated with the fluidic plate 108, or a separate partition that is attached to the heat exchange base 102. Fig. 3 illustrates the latter scenario, where the chamber divider 302 is integral with, or attached to, the wall of the heat exchange base 102 and divides the interior of the heat exchange base 102 into an inlet chamber 304 and an outlet chamber 306.

Fig. 4A illustrates an exemplary fluidic plate 402 that may be used in conjunction with the exemplary embodiments of fig. 1-3. In particular, the fluidic plate 402 is shown separate from the chamber divider 302 of fig. 3 and is adapted to be mounted above the inlet chamber 304.

In FIG. 4A, fluidic base 404 is shown with fluidic nozzle 406, and fluidic base 408 is shown with fluidic nozzle 410. In the example of fig. 4A, the jet bases 404, 408 are shown as trapezoidal prisms and the jet nozzles 406, 410 are shown as rectangles, but other configurations, such as circles or ellipses, may also be used. In general, the fluidic base may define a volume that decreases along the direction of fluid flow therethrough during cooling operations, so as to direct and concentrate the high pressure fluid flow through the fluidic nozzles 406, 410. However, in some embodiments, the fluidic base may have walls that are completely perpendicular to the surface of the fluidic plate 402. Additionally, the jet nozzles 406, 410 may be formed in shapes other than rectangular, such as square, circular, or oval.

As shown in both fig. 1 and 4A, the width and length of the various fluidic pedestals may be substantially matched to the corresponding devices to be cooled (such as devices 124, 126 of fig. 1). The height of each fluidic pedestal is also configurable, insofar as it is suitable to maintain impingement of the high-velocity, high-pressure jet onto the device to be cooled.

In other words, the fluidic pedestal height defines a relatively narrow gap or space between the corresponding fluidic nozzle and the device to be cooled. By matching the plane or surface dimensions of the jet pedestal to its corresponding device to be cooled, further contact of the cooling fluid with the device to be cooled may be maintained after jet impingement and before returning to the outlet chamber (e.g., 134 of fig. 1 or 304 of fig. 3). The contour on the top surface of the fluidic substrate may be parallel to the back surface of the semiconductor module shown in fig. 1, or may have a sloped surface to create an accelerating or decelerating flow.

In fig. 4B, fluidic plate 424 is similar to fluidic plate 402 of fig. 4A, but opening 412 is shown receiving interchangeable fluidic base 414 and includes fluidic nozzle 416. Similarly, the opening 418 can receive an interchangeable fluidic base 420 and include a mesh nozzle 418. For example, an embodiment similar to that of fig. 4B may be used in any scenario where the location of the jet nozzle center does not change from application to application, but the desired coverage area increases or decreases. Thus, in general, the fluidic base may be removable from the fluidic plate and interchangeable with a second fluidic base having a second fluidic nozzle that is a different size than the first fluidic nozzle.

In fig. 1-3, the inlet connection 104 and the outlet connection 106 are shown as being located in the same side or wall of the heat exchange base 102, 302. However, in other exemplary embodiments, such as shown with respect to fig. 5-7, the connections may be located on different base walls.

For example, in fig. 5, a heat exchange base 502 has an inlet connection 504 constructed through a wall 505 and an outlet connection 506 constructed at right angles to the inlet connection 504 and through a wall 507 at right angles to the wall 505.

The chamber divider 508 then defines an inlet chamber 510 and an outlet chamber 512. Thus, the embodiment of fig. 5 may be used in conjunction with fluidic plates having different configurations than those shown above.

For example, fig. 6 shows an L-shaped fluidic plate 602 configured to be mounted over the inlet chamber 510 of fig. 5 and to cover and seal the inlet chamber. As shown, L-shaped fluidic plate 602 includes a fluidic base 604 having a fluidic nozzle 606 that defines a fluidic impingement fluid stream 608. In addition, L-shaped fluidic plate 602 includes a fluidic base 610 having a fluidic nozzle 612 defining a fluidic impinging fluid stream 614. Still further, L-shaped fluidic plate 602 includes a fluidic base 616 having a fluidic nozzle 618 defining a fluidic impinging fluid stream 620. Then, between fluidic bases 604, 610, and 616, and between fluidic base 604 and wall 505, and between fluidic base 616 and wall 507, a relatively low velocity, low pressure flow 622 may occur.

FIG. 7 is a cut-away view of the example jet impingement cooling assembly of FIG. 5 with the example jet plate of FIG. 6 installed therein. Although not shown in fig. 7, it should be understood that the example of fig. 7 may be designed for use with a semiconductor power module in which individual semiconductor chips or devices are shaped and arranged in an L-shaped configuration and are generally sized and spaced to align the center of each such device with the center of the various fluidic nozzles 606, 612, 618. As in fig. 1, such a semiconductor power module may also include one or more additional low power devices that may be configured to align with the exit chamber 512.

Fig. 8 illustrates another exemplary fluidic plate 802. In the example of fig. 8, the fluidic board 802 includes three fluidic bases 804, 806, 808 arranged linearly. As specifically designated with respect to the fluidic base 804 but also common to the fluidic bases 806, 808, the fluidic base 804 includes dual fluidic nozzles 810, 812.

FIG. 9A illustrates another exemplary embodiment of the jet impingement cooling assembly of FIG. 1 using the exemplary jet plate of FIG. 8. As shown, heat exchange base 902 has an inlet connection 904 and an outlet connection 906. The interchangeable jet plate 802 is mounted within the heat exchange base 902. The inlet chamber below the fluidic plate 802 and in fluid connection with the inlet connection 904 is not visible in fig. 9A, while the outlet chamber 908 is shown in fluid connection with the outlet connection 906.

In fig. 9A, attachment plate 910 is shown configured to attach to heat exchange base 902. Fig. 9A shows screw attachments 912, 914, but any suitable attachment means may be used.

The attachment plate 910 is shown having a module mounting opening 916 that is sized and/or configured to receive (e.g., coupled to or adjacent to) one or more semiconductor power modules 918. As shown in fig. 9A, and as described herein, the fluidic bases 804, 806, 808 and included fluidic nozzles (e.g., 810, 812) may be selected and configured to correspond to individual device elements 920, 922 of the power module 918.

Fig. 9B is another exemplary view of the example of fig. 9A. Fig. 9B is a top view showing that the module mounting openings 916 can be opened or closed as needed, depending on the number of semiconductor power modules 918 to be added.

Fig. 9C is an exemplary cross-sectional view of the example of fig. 9A and 9B. As shown, fig. 9C shows a fluid flow 924 that passes through the inlet connection 904 and the various fluidic bases 804, 806, 808, and then through the fluidic nozzles 810, 812.

FIG. 10 is a flow chart illustrating an exemplary manufacturing process for manufacturing a jet impingement cooling assembly, according to exemplary embodiments described herein. In the simplified, non-limiting example of fig. 10, operations 1002 through 1010 are shown as separate sequential operations. However, in some example embodiments, additional or alternative operations or sub-operations may be included, or two or more operations may be implemented together as a single operation.

In the example of fig. 10, a heat exchange base (1002) having an inlet chamber and an outlet chamber may be formed. An inlet connection (1004) may be formed in fluid connection with the inlet chamber, and an outlet connection (1006) may be formed in fluid connection with the outlet chamber.

A fluidic plate (1008) configured to be coupled to the inlet chamber can be formed. A jet base can be formed on the jet plate and has a raised surface with a jet nozzle (1010) formed therein.

In various examples, the jet pedestal can be positioned on the jet plate to impinge a fluid stream from the inlet chamber jet through the jet nozzle and onto the backside of the semiconductor device, as described herein. A fluid flow path may be defined from the inlet to the inlet chamber, through the fluidic nozzle, onto the back side of the semiconductor device, through at least one return channel defined by the base wall of the fluidic substrate and thence to the outlet chamber, and from the outlet chamber through the outlet connection.

The return channel may be defined between the base wall and at least one wall of the heat exchange base. The jet plate can include a second jet base with a second jet nozzle, and the return channel can be defined between the base and the second base.

The fluidic susceptor may have a first configuration on the fluidic plate and the fluidic plate may be interchangeable with a second fluidic plate within the heat exchange base, wherein at least the second susceptor has a second configuration.

The fluidic plates may have any suitable number of fluidic bases arranged and oriented in any suitable manner relative to one another. Any fluidic base may have one, two or more fluidic nozzles. Different fluidic bases on the same fluidic board may have different numbers, shapes, sizes, or configurations of fluidic nozzles. The plurality of flow plates may be sized to fit a single heat exchange base such that the flow plates may be exchanged to perform jet impingement cooling on a corresponding plurality of semiconductor power modules that are also compatible with the same heat exchange base.

FIG. 11 shows a graph demonstrating the improved cooling provided by the various embodiments described herein compared to conventional techniques. As shown, the maximum temperature range of each of the plurality of potential hot spots (e.g., heat spreader base, heat spreader solder, DBC, ceramic, DBC top, solder, or IGBT (insulated gate bipolar transistor)) of the semiconductor power module is significantly lower for the jet impingement technique described herein than for scenarios without cooling enhancement, or compared to other conventional techniques (e.g., DBC fins, pin fins, plate fins, honeycomb 3 stack, or honeycomb 5 stack).

A jet impingement cooling assembly for a semiconductor device may include: a heat exchange base having an inlet chamber and an outlet chamber; an inlet connection in fluid connection with the inlet chamber; and an outlet connection in fluid connection with the outlet chamber. The jet impingement cooling assembly for a semiconductor device may further comprise: a fluidic plate coupled to the inlet chamber; and a jet base formed on the jet plate and having a convex surface in which the jet nozzle is formed.

In various embodiments, the heat exchange base can be configured to receive a semiconductor module including at least one semiconductor device, with a front side facing away from the inlet chamber and a back side facing the jet plate. The jet pedestal can be positioned on the jet plate to impinge a fluid stream from the inlet chamber jet through the jet nozzle and onto the backside of the semiconductor device. A fluid flow path may be defined from the inlet to the inlet chamber, through the fluidic nozzle, onto the back side of the semiconductor device, through at least one return channel defined by the base wall of the fluidic substrate and thence to the outlet chamber, and from the outlet chamber through the outlet connection. The return channel may be defined between the base wall and at least one wall of the heat exchange base. The jet plate can have a second jet base with a second jet nozzle, and the return channel can be defined between the base and the second base.

In embodiments of the jet impingement cooling assembly for semiconductor devices, the inlet connection and the outlet connection may be positioned on a single side of the heat exchange base. The inlet connection may be positioned on a first side of the heat exchange base and the outlet connection may be positioned on a second side of the heat exchange base.

In various embodiments, a fluidic plate assembly for fluidic impingement cooling of semiconductor devices may include: a fluidic plate configured to be received within a heat exchange base; and a jet base formed on the jet plate and having at least one jet nozzle formed in a raised surface that is raised from the jet plate surface by at least one jet base wall connecting the jet plate to the raised surface. The jet plate, when received within the heat exchange base, can define a fluid flow path from the inlet chamber of the heat exchange base, through the jet nozzle, and through a return path defined by the at least one jet base wall to the outlet chamber of the heat exchange base.

In various embodiments, the flow plate can be configured to be received within at least a second heat exchange base. In various embodiments, the jet plate can include a second jet base having a second jet nozzle.

It will be understood that in the foregoing description, when an element such as a layer, region, substrate, or component is referred to as being on, connected to, electrically connected to, coupled to, or electrically coupled to another element, it can be directly on, connected to, or coupled to the other element or one or more intervening elements may be present. In contrast, when an element is referred to as being directly on, directly connected to, or directly coupled to another element or layer, there are no intervening elements or layers present. Elements shown as directly on, directly connected to, or directly coupled to the element may be referred to in this manner, although the terms directly on …, directly connected to …, or directly coupled to … may not be used throughout the detailed description. The claims of this application, if any, may be amended to recite exemplary relationships that are described in the specification or illustrated in the drawings.

As used in this specification and the claims, the singular form can include the plural form unless the context clearly dictates otherwise. In addition to the orientations shown in the figures, spatially relative terms (e.g., above …, above …, above …, below …, below …, below …, below …, etc.) are intended to encompass different orientations of the device in use or operation. In some embodiments, relative terms above … and below … may include vertically above … and vertically below …, respectively. In some embodiments, the term adjacent can include laterally adjacent or horizontally adjacent.

Some embodiments may be implemented using various semiconductor processing and/or packaging techniques. Some embodiments may be implemented using various types of semiconductor processing techniques associated with semiconductor substrates including, but not limited to, for example, silicon (Si), gallium arsenide (GaAs), gallium nitride (GaN), silicon carbide (SiC), and the like.

While certain features of the described embodiments have been illustrated as described herein, many modifications, substitutions, changes, and equivalents will now occur to those skilled in the art. It is, therefore, to be understood that the appended claims are intended to cover all such modifications and changes as fall within the scope of the embodiments. It is to be understood that such modifications and variations are presented by way of example only, and not limitation, and that various changes in form and details may be made. Any portion of the devices and/or methods described herein may be combined in any combination, except mutually exclusive combinations. The embodiments described herein can include various combinations and/or subcombinations of the functions, components and/or features of the different embodiments described.