阅读说明：本技术 一种自驱动微流道散热系统及其制造方法 (Self-driven micro-channel heat dissipation system and manufacturing method thereof ) 是由 陈钏 李君� 曹立强 于 2020-12-24 设计创作，主要内容包括：本发明公开一种自驱动微流道散热系统,包括微流道热沉,泵以及冷却器,其中微流道热沉包括热电元件,热电元件形成温差发电机,为泵提供电能,驱动泵工作,使得冷却液在冷却器、微流道热沉之间循环流动,实现散热。(The invention discloses a self-driven micro-channel heat dissipation system which comprises a micro-channel heat sink, a pump and a cooler, wherein the micro-channel heat sink comprises thermoelectric elements, the thermoelectric elements form a thermoelectric generator to provide electric energy for the pump, and the pump is driven to work, so that cooling liquid circularly flows between the cooler and the micro-channel heat sink, and heat dissipation is realized.)

1. A self-driven microchannel heat dissipation system, comprising:

the micro-channel heat sink is attached to the surface of the device to be cooled and comprises:

the surface of the first insulating layer is provided with a first electrode layer which is a patterned electrode;

the second insulating layer is arranged opposite to the first insulating layer, a second electrode layer is arranged on the second insulating layer in an avoiding way, and the second electrode layer is a patterned electrode; and

the two ends of each thermoelectric element are respectively and electrically connected to the first electrode layer and the second electrode layer, and a flow channel is formed by gaps among the thermoelectric elements;

a pump electrically connected to the first or second electrode layer of the micro channel heat sink;

and a cooler which is matched with the pump and the flow passage to form a pipeline for flowing cooling liquid.

2. The self-propelled micro fluidic channel heat dissipation system of claim 1 wherein the thermoelectric elements comprise alternating P-type and N-type materials.

3. The self-propelled micro-fluidic channel heat dissipation system of claim 1 wherein the surface of the first electrode layer and/or the second electrode layer comprises a barrier layer.

4. The self-propelled micro-fluidic channel heat dissipation system of claim 1, wherein the material of the first electrode layer and/or the second electrode layer is one of copper, aluminum, gold, silver, indium, porous nickel, molybdenum, or alloys thereof.

5. The self-propelled micro-fluidic channel heat dissipation system of claim 3, wherein the barrier layer is made of one of gold, silver, tantalum, copper, antimony, nickel, molybdenum, or alloys thereof.

6. The self-driven micro fluidic channel heat dissipation system of claim 1, wherein the first insulating layer or the second insulating layer has through-silicon-vias disposed thereon, the through-silicon-vias being electrically connected to the corresponding first electrode layer or the second electrode layer, and the pump being electrically connected to the through-silicon-vias.

7. The self-propelled micro fluidic channel heat dissipation system of claim 1, wherein the first electrode layer or the second electrode layer comprises an external electrode, the pump being electrically connected to the external electrode.

8. A manufacturing method of a micro-channel heat sink is characterized by comprising the following steps:

depositing and manufacturing a patterned first electrode layer on the surface of a first insulating layer, and depositing a barrier layer on the surface of the first electrode layer;

spin-coating a first photoresist on the surface of the barrier layer, and depositing a P-type material;

removing the first photoresist;

spin-coating a second photoresist on the surface of the barrier layer, and depositing an N-type material;

forming a solder layer on the surface of the second photoresist;

patterning the solder layer, and removing the second photoresist;

etching a through hole on the second insulating layer and manufacturing a silicon through hole, and then depositing and manufacturing a patterned second electrode layer on the surface of the second insulating layer; and

bonding and sealing the second electrode layer and the solder layer.

9. The method of manufacturing of claim 8, further comprising: and depositing a barrier layer on the surface of the second photoresist before forming the solder layer.

10. The manufacturing method according to claim 8, wherein the thickness of the first photoresist and/or the second photoresist is 10um to 0.5 mm.

Technical Field

The invention relates to a chip heat dissipation technology, in particular to a self-driven micro-channel heat dissipation system and a manufacturing method thereof.

Background

With the development of semiconductor technology, electronic device packages are being developed toward miniaturization, high frequency, and multi-functionalization. The increase in chip power density causes a dramatic increase in the amount of heat generated per unit area. If the heat cannot be dissipated quickly, the temperature in the package structure rises sharply, so that the chip is burnt out, the interconnection metal is melted, the thermal mismatch is damaged, and the like, which causes the system performance to be reduced or even fail.

The micro-channel is an efficient cooling mode, and is a very valuable scheme for solving the problems of high heat flow density and high power consumption of chip heat dissipation. However, in the micro-channel cooling, an external power consumption driving pump is used to circulate the cooling fluid, which consumes extra energy.

Disclosure of Invention

In view of some or all of the problems in the prior art, an aspect of the present invention provides a self-driven micro channel heat dissipation system, including:

the microchannel heat sink is attached to the surface of the device to be cooled, and comprises:

a first insulating layer;

the first electrode layer is a patterned electrode and is arranged on the surface of the first insulating layer;

a second insulating layer;

the second electrode layer is a patterned electrode and is arranged on the surface of the second insulating layer; and

a thermoelectric element, two ends of which are respectively electrically connected to the first electrode layer and the second electrode layer to form a flow channel;

a pump electrically connected to the first or second electrode layer of the micro channel heat sink;

and a cooler which is matched with the pump and the flow passage to form a pipeline for flowing the cooling liquid.

Further, the thermoelectric element comprises P-type materials and N-type materials which are alternately arranged.

Further, the surface of the first electrode layer and/or the second electrode layer comprises a barrier layer.

Further, the material of the first electrode layer and/or the second electrode layer is one of copper, aluminum, gold, silver, indium, porous nickel and molybdenum or an alloy thereof.

Further, the material of the barrier layer is one of gold, silver, tantalum, copper, antimony, nickel and molybdenum or an alloy thereof.

Further, a through silicon via is arranged on the first insulating layer or the second insulating layer and electrically connected with the corresponding first electrode layer or the second electrode layer, and the pump is electrically connected with the through silicon via.

Further, the first electrode layer or the second electrode layer includes an external electrode, and the pump is electrically connected to the external electrode.

Another aspect of the present invention provides a method for manufacturing a self-driven micro flow channel heat sink, including:

depositing and manufacturing a patterned first electrode layer on the surface of the first insulating layer;

spin-coating a first photoresist on the surface of the first electrode layer, and depositing a P-type material;

removing the first photoresist;

spin-coating a second photoresist on the surface of the first electrode layer, and depositing an N-type material;

forming a solder layer on the surface of the second photoresist;

patterning the solder layer, and removing the second photoresist;

etching a through hole on the second insulating layer and manufacturing a silicon through hole, and then depositing and manufacturing a patterned second electrode layer on the surface of the second insulating layer; and

bonding and sealing the second electrode layer and the solder layer.

Further, the manufacturing method further includes: before forming the solder layer, a barrier layer is firstly deposited on the surface of the second photoresist.

Further, the thickness of the first photoresist and/or the second photoresist is 10um-0.5 mm.

The self-driven micro-channel heat dissipation system provided by the invention converts self heat energy of a device to be dissipated, such as a chip or a packaging structure, into electric energy, and then drives the pump to push circulation of cooling liquid in the channel, so that the self-driven micro-channel heat sink is realized, and the micro-channel heat sink and a thermoelectric conversion device form an integrated dual-purpose compact structure without external power consumption. The system can be applied to heat dissipation of high-power and high-heat-flux devices, such as high-performance CPU \ GPU \ TPG and the like, and can also be applied to heat dissipation of RF chips such as GaN and the like.

Drawings

To further clarify the above and other advantages and features of embodiments of the present invention, a more particular description of embodiments of the present invention will be rendered by reference to the appended drawings. It is appreciated that these drawings depict only typical embodiments of the invention and are therefore not to be considered limiting of its scope. In the drawings, the same or corresponding parts will be denoted by the same or similar reference numerals for clarity.

FIG. 1 is a schematic structural diagram of a self-driven micro-channel heat dissipation system according to an embodiment of the present invention;

FIG. 2 illustrates a flow diagram of a self-driven micro fluidic channel heat sink forming one embodiment of the present invention; and

fig. 3a-3i illustrate cross-sectional views of processes for forming a self-driven micro fluidic channel heatsink in accordance with one embodiment of the present invention.

Detailed Description

In the following description, the present invention is described with reference to examples. One skilled in the relevant art will recognize, however, that the embodiments may be practiced without one or more of the specific details, or with other alternative and/or additional methods, materials, or components. In other instances, well-known structures, materials, or operations are not shown or described in detail to avoid obscuring aspects of the invention. Similarly, for purposes of explanation, specific numbers, materials and configurations are set forth in order to provide a thorough understanding of the embodiments of the invention. However, the invention is not limited to these specific details. Further, it should be understood that the embodiments shown in the figures are illustrative representations and are not necessarily drawn to scale.

Reference in the specification to "one embodiment" or "the embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention. The appearances of the phrase "in one embodiment" in various places in the specification are not necessarily all referring to the same embodiment.

It should be noted that the embodiment of the present invention describes the process steps in a specific order, however, this is only for the purpose of illustrating the specific embodiment, and does not limit the sequence of the steps. Rather, in various embodiments of the present invention, the order of the steps may be adjusted according to process adjustments.

The invention provides a self-driven micro-channel heat dissipation system and a manufacturing method of a micro-channel heat sink in the system, aiming at the problem that the conventional micro-channel cooling method needs to use external power consumption. The solution of the invention is further described below with reference to the accompanying drawings of embodiments.

Fig. 1 is a schematic structural diagram of a self-driven micro flow channel heat dissipation system according to an embodiment of the present invention. As shown in fig. 1, a self-driven micro-channel heat dissipation system, includes micro-channel heat sink, pump 002 and cooler 003, wherein the micro-channel heat sink includes thermoelectric element, thermoelectric element forms thermoelectric generator, for pump 002 provides the electric energy, drives pump 002 works for the coolant liquid is in circulation flow between cooler 003, the micro-channel heat sink realizes the heat dissipation. In one embodiment of the present invention, the self-driven micro-channel heat dissipation system is attached to the back surface of the chip to be heat-dissipated, and in another embodiment of the present invention, the self-driven micro-channel heat dissipation system is attached to the surface of the package to be heat-dissipated.

The micro-channel heat sink comprises a first insulating layer 101, a second insulating layer 102 arranged opposite to the first insulating layer 101, and a thermoelectric element arranged between the first insulating layer 101 and the second insulating layer 102, wherein a through hole 406 is arranged on the second insulating layer 102, so that cooling liquid can flow into or out of the micro-channel heat sink.

The first insulating layer 101 is disposed on a surface of the first chip 401, and the first chip 401 is disposed on the substrate 408, it should be understood that the first insulating layer 101 may also be disposed on a surface of other package structures or devices requiring heat dissipation. The first electrode layer 104 is disposed on the first insulating layer 101, the first electrode layer 104 is a patterned electrode, in an embodiment of the present invention, a barrier layer is further disposed on the first electrode layer 104, the material of the first electrode layer 104 may be one of copper, aluminum, gold, silver, indium, porous nickel, and molybdenum, or an alloy thereof, and the material of the barrier layer may be one of gold, silver, tantalum, copper, antimony, nickel, and molybdenum, or an alloy thereof. To achieve an electrical connection with the pump 002, in yet another embodiment of the present invention, the first electrode layer 104 includes an external electrode, and the pump 002 is electrically connected to the external electrode.

The second insulating layer 102 is disposed on a surface of the second chip 405, and it should be understood that the second insulating layer 102 may also be disposed on a surface of other package structures or devices requiring heat dissipation. A second electrode layer 105 is disposed on the second insulating layer 102, and the second electrode layer 105 is a patterned electrode. In one embodiment of the present invention, the material of the second electrode layer 105 is a solderable material, such as a metal like copper, nickel or gold. In order to realize the electrical connection with the pump 002, in another embodiment of the present invention, the second electrode layer 105 includes an external electrode, and a through silicon via 121 is disposed on the second insulating layer 102, the through silicon via 121 is electrically connected to the external electrode of the second electrode layer 105, and the pump 002 is electrically connected to the through silicon via 121.

The thermoelectric element comprises P-type materials 131 and N-type materials 132 which are alternately arranged, two ends of the thermoelectric element are respectively and electrically connected to the first electrode layer 104 and the second electrode layer 105, a gap between the thermoelectric elements forms a flow channel, and two ends of the flow channel are respectively communicated with the pump 002 and the cooler 003 to form a pipeline for flowing cooling liquid. In one embodiment of the invention, the height of the thermoelectric element is 10um-0.5 mm.

Fig. 2 and 3a-3i show a schematic flow diagram and a cross-sectional process diagram of a micro-channel heat sink according to an embodiment of the invention. Taking the fabrication of the micro-channel heat sink on a chip as an example, it should be understood that one skilled in the art can fabricate the micro-channel heat sink on a non-chip semiconductor material according to this embodiment. As shown in the figure, a method for manufacturing a micro-channel heat sink includes:

first, in step 301, as shown in fig. 3a, a first insulating layer is formed. Forming a first insulating layer 101 on a surface of the first chip 401;

next, in step 302, as shown in fig. 3b, a first electrode layer is formed. Depositing and manufacturing a patterned electrode on the first insulating layer 101 to form a first electrode layer 104, wherein the specific forming method may include:

depositing a layer of silicon dioxide by thermal oxidation, magnetron sputtering or plasma enhanced chemical vapor deposition;

forming a first electrode pattern on the silicon dioxide through photoetching and etching processes; and

depositing an electrode material on the first electrode pattern to form a first electrode layer;

to avoid diffusion of electrode material and damage to the thermoelectric element, in one embodiment of the present invention, a barrier layer may also be deposited on the first electrode layer 104 by magnetron sputtering, electron beam evaporation or vacuum thermal evaporation process;

next, at step 303, a photoresist is spin coated, as shown in fig. 3 c. Spin-coating a photoresist 402 on the first electrode layer 104, wherein the thickness of the photoresist is slightly higher than the preset height of the thermoelectric element, and therefore, the thickness of the photoresist 402 is generally 10um-0.5 mm;

next, at step 304, a P-type material is deposited, as shown in FIG. 3 d. Exposing and developing at the designated position of the photoresist 402 to form a groove, and depositing a P-type material 131 on the groove, wherein the specific deposition process can be magnetron sputtering, template electrodeposition, a precision cutting method, film etching, micro-printing or micro-spraying and the like;

next, in step 305, as shown in fig. 3e, an N-type material is deposited. Removing the photoresist 402, then spin-coating the photoresist 403 again, exposing and developing at the designated position of the photoresist 403 to form a groove, and depositing the N-type material 132 on the groove, wherein the specific deposition process can be magnetron sputtering, stencil electrodeposition, a precision cutting method, film etching, micro printing or micro spraying and the like;

next, at step 306, a solder layer is formed, as shown in fig. 3 f. Forming a solder layer 404 on the surfaces of the photoresist 403 and the thermoelectric element by electroplating or chemical plating, wherein the bottom layer of the solder layer is made of copper or nickel, and the upper layer is made of tin, indium or gold, so as to prevent the diffusion of electrode materials and damage to the thermoelectric element, in an embodiment of the present invention, a barrier layer may be deposited on the surfaces of the photoresist 403 and the thermoelectric element by magnetron sputtering, electron beam evaporation or vacuum thermal evaporation, and then a solder layer is formed on the barrier layer;

next, at step 307, the solder layer is patterned as shown in fig. 3 g. Removing part of the solder layer to pattern the solder layer, and then removing the photoresist 403 to form a thermoelectric material flow channel;

next, in step 308, as shown in fig. 3h, a second electrode layer is formed. Forming a second insulating layer 102 on the surface of the second chip 405, etching a through hole 406 on the second chip 405 and the second insulating layer 102, and forming a patterned electrode, i.e. a second electrode layer 105, on the surface of the second insulating layer 102. The manufacturing process of the second electrode layer 105 is the same as the manufacturing process of the first electrode layer 104. In one embodiment of the present invention, a silicon deep hole 121 can also be fabricated on the second chip 405 and the second insulating layer 102, the silicon deep hole 121 being electrically connected to the second electrode layer 105; and

finally, at step 309, the seal is bonded as shown in FIG. 3 i. The second electrode layer and the solder layer are bonded and sealed, for example, a sealing method such as copper tin, gold, gold tin, or the like can be used.

The micro-channel heat sink is manufactured, a potential difference is formed under the condition of temperature difference, the potential difference can drive the pump to work, and cooling liquid flows through the micro-channel under the driving of the pump to take away heat, so that the chip is kept below a safe temperature.

While various embodiments of the present invention have been described above, it should be understood that they have been presented by way of example only, and not limitation. It will be apparent to persons skilled in the relevant art that various combinations, modifications, and changes can be made thereto without departing from the spirit and scope of the invention. Thus, the breadth and scope of the present invention disclosed herein should not be limited by any of the above-described exemplary embodiments, but should be defined only in accordance with the following claims and their equivalents.