阅读说明：本技术 膜层的制备方法和反应腔室 (Preparation method of film and reaction chamber ) 是由 张兴 孙红霞 潘世荣 李建勇 于 2019-05-06 设计创作，主要内容包括：本发明涉及溅射镀膜技术领域,公开了一种膜层的制备方法和反应腔室,用以减少阳极消失、靶溅射不均匀等原因引起的成膜问题。其中膜层的制备方法包括：向孪生靶输入双极性波的中频交流电进行溅射,并控制孪生靶中的两个靶向相反的方向转动；输送衬底至溅射区域,使得孪生靶被溅射下的原子沉积在衬底上形成膜层。(The invention relates to the technical field of sputtering coating, and discloses a preparation method of a film layer and a reaction chamber, which are used for reducing the film forming problem caused by anode disappearance, uneven target sputtering and the like. The preparation method of the film layer comprises the following steps: inputting bipolar wave medium-frequency alternating current to the twin target for sputtering, and controlling two targets in the twin target to rotate in opposite directions; and conveying the substrate to a sputtering area, so that the twin target is deposited on the substrate by the sputtered atoms to form a film layer.)

1. A method of preparing a film, comprising:

inputting bipolar wave medium-frequency alternating current to the twin target for sputtering, and controlling two targets in the twin target to rotate in opposite directions;

and conveying the substrate to a sputtering area, so that the atoms sputtered from the twin target are deposited on the substrate to form a film layer.

2. The method as claimed in claim 1, wherein the twin target is formed by: providing 2+2n targets arranged along a straight line, wherein the mth target and the 2n +3-m targets form the twin target along the arrangement direction, and the twin targets comprise: m is an integer of 1 to 2+2 n.

3. The film layer preparation method according to claim 1, wherein the target is a CIG target, and in the step, a medium-frequency alternating current of a bipolar wave is input to the twin target for sputtering, and two targets in the twin target are controlled to rotate in opposite directions, specifically comprising: under the selenium steam atmosphere, the medium-frequency alternating current of bipolar waves is input into the twin target, and two targets in the twin target are controlled to rotate in opposite directions.

4. The method for preparing the film according to claim 2, wherein the step of inputting a bipolar wave of medium-frequency alternating current to the twin target for sputtering and controlling two targets in the twin target to rotate in opposite directions specifically comprises:

and (3) inputting bipolar intermediate-frequency alternating current to the twin targets for sputtering, and controlling the 1 st target to the 1+ n th target to rotate along the same rotation direction in the arrangement direction, and controlling the 2+ n th target to the 2+2n th target to rotate along the same rotation direction.

5. The method of claim 1, wherein the frequency of sputtering is 20 khz to 100 khz, and/or the target is rotated at 2 rpm to 5 rpm.

6. The method for preparing a film according to claim 1, wherein the waveform of the medium frequency alternating current is a bipolar rectangular wave.

7. The method for preparing a film according to claim 1, wherein the duty ratio of the medium frequency alternating current is greater than or equal to 40% and less than or equal to 85%.

8. The method of any one of claims 1 to 7, wherein the sputtering temperature is 500 ℃ or higher and 700 ℃ or lower, and the sputtering pressure is 0.25 Pa or higher and 0.7 Pa or lower.

9. A reaction chamber for use in a method of preparing a film according to claim 1, comprising:

a chamber body;

2+2n targets arranged in the chamber body, wherein n is an integer greater than or equal to 0;

a medium frequency power supply electrically connected to the same 2 of said targets, wherein: two targets connected with the same medium-frequency power supply form a twin target;

and the first driving device and the second driving device are respectively connected with the rotating shafts of one target in the twin targets, one of the twin targets rotates along a first direction, the other of the twin targets rotates along a second direction, and the first direction and the second direction are opposite.

10. The reaction chamber of claim 9, wherein the 2+2n targets are arranged along a straight line, and the mth target and the 2n +3-m targets in the arrangement direction constitute the twin target, wherein: m is an integer of 1 to 2+2 n.

Technical Field

The invention relates to the technical field of sputtering coating, in particular to a preparation method of a film and a reaction chamber.

Background

The CIGS thin-film solar cell has the advantages of relatively high efficiency, radiation resistance, good low-light property, light weight, capability of being used as a mobile energy source and the like. The CIGS layer is used as an absorption layer of CIGS thin film solar energy, and the main film deposition processes comprise magnetron sputtering and co-evaporation.

The method for depositing the CIGS by magnetron sputtering comprises a method for depositing a prefabricated layer and then selenizing and a method for directly prefabricating the CIGS layer. In the CIGS film forming process, magnetron sputtering needs to be controlled to avoid the problem of film forming quality caused by magnetron sputtering arc discharge, anode disappearance, target sputtering non-uniformity and the like. One problem to be solved is how to reduce the sputtering film formation unevenness caused by the target.

Disclosure of Invention

In order to solve the technical problems, the invention provides a preparation method of a film layer and a reaction chamber, which are used for reducing the film forming problem caused by anode disappearance, uneven target sputtering and the like.

The invention provides a preparation method of a film, which comprises the following steps:

inputting bipolar wave medium-frequency alternating current to the twin target for sputtering, and controlling two targets in the twin target to rotate in opposite directions;

and conveying the substrate to a sputtering area, so that the atoms sputtered from the twin target are deposited on the substrate to form a film layer.

According to the preparation method of the film, the intermediate frequency sputtering is adopted, every two targets are divided into a group to form twin targets, so that the two targets in the twin targets are mutually a cathode and an anode, the substrate or other parts cannot be connected with a power supply, namely the substrate or other parts are not required to be used as the anode, and the design can avoid the phenomenon that the anode disappears after the sputtering material covers the substrate or other parts; depending on the dielectric constant of the dielectric layer and the current density of the bombarding ion flux, the dielectric layer may be continuously neutralized by an alternating voltage of relatively low frequency (as compared to the radio frequency of 13.56 MHz). If the dielectric layer is neutralized continuously, the discharged target surface can not have the accumulation of electric charges, and the electric arc caused by electric breakdown is prevented at the same time, so that the arc discharge phenomenon can be reduced; in addition, the magnetron sputtering has the influence of a cross angle due to a magnetic field, the medium-frequency sputtering has the influence of a cross field, and more free electrons are collected at two ends of a target during the magnetron sputtering to form a strong self-sustaining discharge phenomenon. Correspondingly, two ends of the target are sputtered most easily, the sputtering rate is higher than that of other places, the target consumption is high, the two targets in the twin target are connected with driving devices in different driving directions, so that the rotating directions of the two targets are different, the influence of a cross angle caused by a magnetic field can be reduced, the influence of a cross field caused by intermediate frequency sputtering is reduced, the sputtering rates of the two ends of the target are reduced, and the phenomenon that the sputtering at the two ends of the target is high is reduced.

The invention also provides a reaction chamber for the preparation method of the film layer, which comprises the following steps:

a chamber body;

2+2n targets arranged in the chamber body, wherein n is an integer greater than or equal to 0;

a medium frequency power supply electrically connected to the same 2 of said targets, wherein: two targets connected with the same medium-frequency power supply form a twin target;

and the first driving device and the second driving device are respectively connected with the rotating shafts of one target in the twin targets, one of the twin targets rotates along a first direction, the other of the twin targets rotates along a second direction, and the first direction and the second direction are opposite.

According to the reaction chamber provided by the invention, every two targets are connected with the same intermediate frequency power supply to form the twin target, so that the two targets in the twin target are mutually a cathode and an anode, the substrate or other parts can not be connected with the power supply, namely the substrate or other parts are not required to be used as anodes, and the problem of anode disappearance can be well eliminated by adopting the design; depending on the dielectric constant of the dielectric layer and the current density of the bombarding ion flux, the dielectric layer may be continuously neutralized by an alternating voltage of relatively low frequency (as compared to the radio frequency of 13.56 MHz). If the dielectric layer is neutralized continuously, the discharged target surface can not have the accumulation of electric charges, and the electric arc caused by electric breakdown is prevented at the same time, so that the arc discharge phenomenon can be reduced; in addition, the magnetron sputtering has the influence of a cross angle due to a magnetic field, the intermediate frequency sputtering has the influence of a cross field, the target is generally positioned at two ends, and the two ends of the target collect more free electrons during the magnetron sputtering to form a strong self-sustaining discharge phenomenon. Correspondingly, two ends of the target are sputtered most easily, the sputtering rate is higher than that of other places, the target consumption is high, the two targets in the twin target are connected with driving devices in different driving directions, so that the rotating directions of the two targets are different, the influence of a cross angle caused by a magnetic field can be reduced, the influence of a cross field caused by intermediate frequency sputtering is reduced, the sputtering rates of the two ends of the target are reduced, and the phenomenon that the sputtering at the two ends of the target is high is reduced.

Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.

Drawings

The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the example serve to explain the principles of the invention and not to limit the invention.

FIG. 1 is a flow chart of a method for preparing a film according to the present invention;

FIG. 2 is another flow chart of a method for preparing a film layer according to the present invention;

FIG. 3 is a flow chart of a method for fabricating a solar cell according to the present invention;

FIG. 4 is a schematic structural view of a reaction chamber provided in the present invention;

FIG. 5 is a schematic view of another embodiment of a reaction chamber according to the present invention;

FIG. 6 is a schematic structural view of a coating apparatus provided in the present invention;

FIG. 7 is a schematic view showing the principle that sputtering is fast at both ends of the target in sputtering.

Reference numerals: 1-chamber body 11-hollow chamber 12-door body 2-target 21-first twin target 22-second twin target 3-intermediate frequency power supply 4-first driving device 5-second driving device 6-transmission mechanism 7-installation shaft L-interaxial distance W-width A-first direction B-second direction

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings of the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the invention without any inventive step, are within the scope of protection of the invention.

It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.

In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.