阅读说明：本技术 芯片封装结构及其制作方法 (Chip packaging structure and manufacturing method thereof ) 是由 倪庆羽 呂香桦 刘扬伟 于 2019-02-28 设计创作，主要内容包括：一种芯片封装结构,包括一第一防护层、一形成在所述第一防护层上的线路重置层、一与所述线路重置层电连接的芯片及一包覆所述线路重置层及所述芯片的封胶体,所述第一防护层包括一外露表面及与所述外露表面相连接的至少四个侧边,所述封胶体包括一封胶表面；所述封胶体还包覆所述第一防护层的至少四个侧边。本发明提供的芯片封装结构能够避免所述线路重置层及第一防护层被外力破坏,增强所述芯片封装结构的可靠性。(A chip packaging structure comprises a first protective layer, a circuit resetting layer formed on the first protective layer, a chip electrically connected with the circuit resetting layer and a sealing colloid covering the circuit resetting layer and the chip, wherein the first protective layer comprises an exposed surface and at least four side edges connected with the exposed surface, and the sealing colloid comprises a sealing colloid surface; the sealing colloid also coats at least four sides of the first protective layer. The chip packaging structure provided by the invention can prevent the circuit resetting layer and the first protective layer from being damaged by external force, and the reliability of the chip packaging structure is enhanced.)

1. A chip packaging structure comprises a first protective layer, a circuit resetting layer formed on the first protective layer, a chip electrically connected with the circuit resetting layer and a sealing colloid covering the circuit resetting layer and the chip, wherein the first protective layer comprises an exposed surface and at least four side edges connected with the exposed surface, and the sealing colloid comprises a sealing colloid surface; the sealing structure is characterized in that the sealing colloid also covers at least four side edges of the first protective layer.

2. The chip package structure according to claim 1, wherein the first protective layer has a plurality of first openings formed therein, a portion of the circuit resetting layer is exposed from the first openings, and a solder ball is formed in one of the first openings and electrically connected to the circuit resetting layer.

3. The chip package structure according to claim 1, wherein the chip package structure further comprises a second protective layer formed on and covering the wire reset layer, wherein the second protective layer has a plurality of second openings formed thereon, a portion of the wire reset layer is exposed from the second openings, and electrical contact pads are formed in the second openings.

4. The chip package structure according to claim 3, wherein each second opening has an electrical contact pad formed therein, and each of the chips further has a plurality of conductive bumps secured to the electrical contact pads, one of the conductive bumps corresponding to one of the electrical contact pads.

5. The chip package structure according to claim 1, wherein an exposed surface of the first protective layer is flush with an encapsulant surface of the encapsulant.

6. The chip package structure according to claim 1, wherein the encapsulant is an epoxy molding compound.

7. A manufacturing method of a chip packaging structure comprises the following steps:

providing a bearing substrate;

forming a first protective layer on the surface of the bearing substrate and forming a circuit resetting layer on the first protective layer, wherein the first protective layer comprises an exposed surface attached to the bearing substrate;

providing at least one chip and electrically connecting the chip with the circuit resetting layer;

forming a sealing colloid and enabling the sealing colloid to coat the first protective layer, the circuit resetting layer and the chip, wherein the sealing colloid comprises a sealing colloid surface attached to the bearing substrate; and

and removing the bearing substrate to obtain the chip packaging structure.

8. The method for manufacturing a chip package structure according to claim 7, wherein the first protective layer has a plurality of first openings formed thereon, and a portion of the circuit resetting layer is exposed from the first openings, and further comprising, after the step of removing the carrier substrate:

and forming a solder ball in each first opening, wherein the solder ball is electrically connected with the circuit resetting layer.

9. The method for manufacturing the chip package structure according to claim 7, further comprising the step of, after forming the line reset layer:

forming a second protective layer covering the circuit resetting layer, wherein a plurality of second openings are formed in the second protective layer, and part of the circuit resetting layer is exposed out of the second openings respectively; and

forming electrical contact pads in said second openings, one electrical contact pad being formed in one second opening; a plurality of conductive bumps are further formed on one of the chips, the conductive bumps are fixedly connected to the electrical contact pads, and one of the conductive bumps corresponds to one of the electrical contact pads.

10. The method of claim 7, wherein a molding surface of the molding compound is flush with an exposed surface of the first protective layer.

Technical Field

The invention relates to the field of chip packaging, in particular to a chip packaging structure and a manufacturing method thereof.

Background

As the functions of the integrated circuits become stronger and the integration level becomes higher, the packaging technology plays an increasingly important role in the integrated circuit products, and the ratio of the packaging technology to the value of the whole electronic system becomes larger and larger. Meanwhile, as the characteristic size of the integrated circuit reaches the nanometer level, the chip is developed to a higher density and a higher clock frequency, and the package is also developed to a higher density.

Because the fan-out wafer level packaging (flow) technology has the advantages of miniaturization, low cost, high integration level, better performance, higher energy efficiency and the like, the fan-out wafer level packaging technology has become an important packaging method for electronic equipment such as mobile/wireless networks with high requirements, and is one of the most promising packaging technologies at present.

However, the encapsulant of the conventional chip package structure only covers the periphery of the chip, and the redistribution layer and the protection layer (usually a Polyimide (PI) layer) are exposed outside the encapsulant, so that a height difference occurs between the side edge of the encapsulant and the side edges of the redistribution layer and the cover film layer, and the redistribution layer and the cover film layer are easily damaged by an external force, thereby deteriorating the reliability of the chip package structure.

Disclosure of Invention

In view of the above, the present invention provides a chip package structure capable of preventing a redistribution layer and a protection layer from being damaged by an external force and enhancing reliability.

It is also necessary to provide a method for manufacturing a chip package structure that prevents the redistribution layer and the protection layer from being damaged by external force and enhances reliability.

A chip packaging structure comprises a first protective layer, a circuit resetting layer formed on the first protective layer, a chip electrically connected with the circuit resetting layer and a sealing colloid covering the circuit resetting layer and the chip, wherein the first protective layer comprises an exposed surface and at least four side edges connected with the exposed surface, and the sealing colloid comprises a sealing colloid surface; the sealing colloid also coats at least four sides of the first protective layer.

Furthermore, a plurality of first openings are formed in the first protective layer, a part of the circuit resetting layer is exposed from the first openings, a solder ball is formed in one of the first openings, and the solder ball is electrically connected with the circuit resetting layer.

Furthermore, the chip packaging structure further comprises a second protective layer, the second protective layer is formed on the circuit resetting layer and covers the circuit resetting layer, a plurality of second openings are formed in the second protective layer, part of the circuit resetting layer is exposed out of the second openings, and electrical contact pads are formed in the second openings.

Furthermore, an electrical contact pad is formed in each second opening, a plurality of conductive bumps are formed on each chip, the conductive bumps are fixedly connected to the electrical contact pads, and one conductive bump corresponds to one electrical contact pad.

Furthermore, the exposed surface of the first protective layer is flush with the sealing surface of the sealing colloid.

Furthermore, the material of the sealing colloid is epoxy plastic packaging material.

A manufacturing method of a chip packaging structure comprises the following steps: providing a bearing substrate; forming a first protective layer on the surface of the bearing substrate and forming a circuit resetting layer on the first protective layer, wherein the first protective layer comprises an exposed surface attached to the bearing substrate; providing at least one chip and electrically connecting the chip with the circuit resetting layer; forming a sealing colloid and enabling the sealing colloid to coat the first protective layer, the circuit resetting layer and the chip, wherein the sealing colloid comprises a sealing colloid surface attached to the bearing substrate; and removing the bearing substrate to obtain the chip packaging structure.

Further, a plurality of first openings are formed in the first protection layer, and a portion of the circuit resetting layer is exposed from the first openings, and after the step of removing the carrier substrate, the method further includes the steps of: and forming a solder ball in each first opening, wherein the solder ball is electrically connected with the circuit resetting layer.

Further, after forming the line reset layer, the method further comprises the steps of: forming a second protective layer covering the circuit resetting layer, wherein a plurality of second openings are formed in the second protective layer, and part of the circuit resetting layer is exposed out of the second openings respectively; and forming electrical contact pads in said second openings, one electrical contact pad being formed in one second opening; a plurality of conductive bumps are further formed on one of the chips, the conductive bumps are fixedly connected to the electrical contact pads, and one of the conductive bumps corresponds to one of the electrical contact pads.

Furthermore, the sealing surface of the sealing colloid is flush with the exposed surface of the first protective layer.

According to the chip packaging structure and the manufacturing method thereof provided by the invention, the circuit resetting layer and at least four side edges of the first protective layer formed on the circuit resetting layer are coated in the sealant, so that the circuit resetting layer and the first protective layer can be prevented from being damaged by external force, and the reliability of the chip packaging structure is further enhanced.

Drawings

Fig. 1 is a schematic cross-sectional view of a carrier substrate according to an embodiment of the invention.

Fig. 2 is a cross-sectional view of the carrier substrate shown in fig. 1 after a first protection layer, a circuit resetting layer and a second protection layer are formed on the surface of the carrier substrate.

Fig. 3 is a schematic cross-sectional view of the second protective layer shown in fig. 2 after a chip is attached to the surface of the second protective layer.

Fig. 4 is a schematic cross-sectional view of the chip, the circuit resetting layer, the first protection layer and the second protection layer shown in fig. 3 after being encapsulated in an encapsulant.

Fig. 5 is a schematic cross-sectional view of the carrier substrate shown in fig. 4 removed to obtain a package intermediate.

Fig. 6 is a cross-sectional view illustrating a chip package structure obtained by forming solder balls on the surface of the first passivation layer shown in fig. 5.

Description of the main elements

The following detailed description will further illustrate the invention in conjunction with the above-described figures.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.

It will be understood that when an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. When an element is referred to as being "disposed on" another element, it can be directly on the other element or intervening elements may also be present. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.

Referring to fig. 1-6, a method for fabricating a chip package structure according to a preferred embodiment of the present invention includes the following steps:

in a first step, referring to fig. 1, a carrier substrate 10 is provided. The carrier substrate 10 includes a carrier 11 and a release film 12 formed on the carrier 11.

The material of the bearing plate 11 is any insulating material with bearing function. In this embodiment, the material of the carrier plate 11 is Polyimide (PI). In other embodiments, the material of the carrier plate 11 may also be Polyethylene Terephthalate (PET), Polyethylene Naphthalate (PEN), or other resin hard material, ceramic plate, metal plate, or the like.

The release film layer 12 includes a first surface 121, and the first surface 121 is opposite to the carrier 11.

The release film layer 12 may be made of Polyethylene (PE), polyethylene terephthalate (PET), oriented Polypropylene (OPP), Polycarbonate (PC), Polystyrene (PS), polymethyl methacrylate (PMMA), biaxial-oriented Polypropylene (BOPP), polymethylpentane (Poly-4-methyl-1-pentane, TPX), polyvinyl chloride (PVC), polytetrafluoroethylene (polytetrafluoroethylene, PTFE), monosilicon, or a combination of at least two of them. In the present embodiment, the release film layer 12 is preferably a PET release film.

Referring to fig. 2, a first protection layer 20 is formed on the first surface 121 of the release film 12, a redistribution layer (RDL) 30 is formed on the first protection layer 20, and a second protection layer 40 is formed to cover the RDL 30.

A plurality of first openings 21 are formed in the first protective layer 20, a plurality of second openings 41 are formed in the second protective layer 40, and a portion of the line resetting layer 30 is exposed from the first openings 21 and the second openings 41, respectively.

The first protective layer 20 may be a cover film layer or a solder mask layer. In this embodiment, the first protective layer 20 is a covering film layer. Preferably, the first protective layer 20 is a Polyimide (PI) cover film layer.

The first protective layer 20 includes an exposed surface 22 and at least four sides 23 connected to the exposed surface 22, and the exposed surface 22 contacts the first surface 121.

The circuit resetting layer 30 can be manufactured by electroplating or image transfer process. The line reset layer 30 is used for mounting or communicatively coupling with external electronic components.

The second protection layer 40 is used to protect the line reset layer 30.

The second protective layer 40 may be a cover film layer or a solder mask layer. In this embodiment, the second protective layer 40 is a covering film layer. Preferably, the second protective layer 40 is a Polyimide (PI) cover film layer.

Third, referring to fig. 3, an electrical contact pad 50 is formed in the second opening 41, at least one chip 60 is provided, and the chip 60 is fixed to the second protective layer 40 through the electrical contact pad 50, wherein the chip 60 is electrically connected to the circuit resetting layer 30 through the electrical contact pad 50.

The chip 60 includes a second surface 61, and the second surface 61 faces the second protective layer 40 and is parallel to the second protective layer 40. The second surface 61 further has a plurality of conductive bumps 62 formed thereon, and the conductive bumps 62 are fixed to the electrical contact pads 50. One of the conductive bumps 62 corresponds to one of the electrical contact pads 50.

In a fourth step, referring to fig. 4, an encapsulant 70 is formed on a side of the carrier substrate 10 where the circuit resetting layer 30 and the chip 60 are formed, and the first protective layer 20, the circuit resetting layer 30, the second protective layer 40 and the chip 60 are covered by the encapsulant 70.

The molding compound 70 includes a molding compound surface 71. The molding surface 71 is in contact with the first surface 121.

In the present embodiment, the molding compound 70 is formed by injection molding. Specifically, firstly, a mold (not shown) is provided, the mold includes a mold cavity and a glue injection channel, and the carrier substrate 10 including the first protective layer 20, the circuit resetting layer 30 and the chip 60 is accommodated in the mold cavity; then, injecting a colloid into the mold cavity through the glue injection channel, so that the colloid coats the first protective layer 20, the circuit resetting layer 30 and the chip 60; then, curing the colloid, thereby forming the sealing colloid 70; then, the carrier substrate 10 with the molding compound 70 formed thereon is taken out from the mold cavity.

In the present embodiment, the material of the molding compound 70 is Epoxy Molding Compound (EMC). In other embodiments, the material of the molding compound 70 is not limited to the EMC material, and may be other materials suitable for plastic molding.

In a fifth step, referring to fig. 5, the carrier substrate 10 is removed to obtain a package intermediate 110.

The package intermediate 110 includes a first protection layer 20, a circuit resetting layer 30 formed on the first protection layer 20, a second protection layer 40 covering the circuit resetting layer 30, a chip 60, and an encapsulant 70 covering the first protection layer 20, the circuit resetting layer 30, the second protection layer 40, and the chip 60. The first protective layer 20 includes an exposed surface 22 and at least four side edges 23 connected to the exposed surface 22, the exposed surface 22 is far from the circuit resetting layer 30, a plurality of first openings 21 are formed on the first protective layer 20, a plurality of second openings 41 are formed on the second protective layer 40, and a part of the circuit resetting layer 30 is exposed from the first openings 21 and the second openings 41 respectively. An electrical contact pad 50 is formed within one of the second openings 41. The chip 60 includes a second surface 61, and the second surface 61 faces the second protective layer 40 and is parallel to the second protective layer 40. The second surface 61 further has a plurality of conductive bumps 62 formed thereon, and the conductive bumps 62 are fixed to the electrical contact pads 50. One of the conductive bumps 62 corresponds to one of the electrical contact pads 50. The molding compound 70 includes a molding compound surface 71. The molding compound 70 completely includes the circuit resetting layer 30, the second protective layer 40 and the chip 60 and covers at least four sides 23 of the first protective layer 20, and a molding surface 71 of the molding compound 70 is flush with the exposed surface 22 of the first protective layer 20.

Referring to fig. 6, a plurality of solder balls 80 are formed and filled in the first openings 21, so as to form a chip package structure 100.

A plurality of the solder balls 80 are used to electrically connect an external electronic component (not shown), which may be a chip, a circuit board, or the like.

The invention further provides a chip package structure 100, where the chip package structure 100 includes a first protective layer 20, a line resetting layer 30 formed on the first protective layer 20, a second protective layer 40 covering the line resetting layer 30, a chip 60 electrically connected to the line resetting layer 30, and an encapsulant 70 covering the first protective layer 20, the line resetting layer 30, the second protective layer 40, and the chip 60. The first protective layer 20 includes an exposed surface 22, the exposed surface 22 is far away from the line resetting layer 30, a plurality of first openings 21 are formed on the first protective layer 20, a plurality of second openings 41 are formed on the second protective layer 40, and a portion of the line resetting layer 30 is exposed from the first openings 21 and the second openings 41 respectively. An electrical contact pad 50 is formed within one of the second openings 41. The first protective layer 20 further includes an exposed surface 22 opposite to the circuit resetting layer 30 and at least four side edges 23 connected to the exposed surface 22, and the molding compound 70 covers the at least four side edges 23 of the first protective layer 20. The chip 60 includes a second surface 61, and the second surface 61 faces the second protective layer 40 and is parallel to the second protective layer 40. The second surface 61 further has a plurality of conductive bumps 62 formed thereon, and the conductive bumps 62 are fixed to the electrical contact pads 50. One of the conductive bumps 62 corresponds to one of the electrical contact pads 50. The molding compound 70 includes a molding compound surface 71. The molding surface 71 is flush with the exposed surface 22 of the first protective layer 20.

The chip package structure 100 further includes a plurality of solder balls 80, one solder ball 80 is formed in one first opening 21, and the plurality of solder balls 80 are electrically connected to the circuit resetting layer 30 respectively for electrically connecting to external electronic components.

According to the chip packaging structure and the manufacturing method thereof provided by the invention, the circuit resetting layer 30 and at least four side edges 23 of the first protective layer 20 formed on the circuit resetting layer 30 are also coated in the sealing colloid 70, so that the circuit resetting layer 30 and the first protective layer 20 can be prevented from being damaged by external force, and the reliability of the chip packaging structure 100 is further enhanced.

Although the present invention has been described with reference to the above preferred embodiments, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.