Die bonding process of semiconductor element, semiconductor element and electronic product
阅读说明：本技术 一种半导体元件的固晶工艺及半导体元件及电子产品 (Die bonding process of semiconductor element, semiconductor element and electronic product ) 是由 王琇如 于 2020-05-21 设计创作，主要内容包括：本发明公开一种半导体元件的固晶工艺及半导体元件及电子产品,半导体元件的固晶工艺,包括以下步骤：S1、提供载体,提供具有芯片焊接部的铜制载体,并在所述铜制载体上的所述芯片焊接部设置锡材料；S2、贴片,采用贴片机将芯片黏贴在所述芯片焊接部。本方案通过在纯铜载体上设置锡焊料,直接将芯片热压在锡焊料上,使稀罕料融化并实现对芯片的焊接,由此可以提高产品的生产效率,提高产品的良率并降低生产成本。(The invention discloses a die bonding process of a semiconductor element, the semiconductor element and an electronic product, wherein the die bonding process of the semiconductor element comprises the following steps: s1, providing a carrier, providing a copper carrier with a chip welding part, and arranging a tin material on the chip welding part on the copper carrier; and S2, pasting a chip on the chip welding part by adopting a chip mounter. This scheme is through setting up the tin solder on pure copper carrier, directly with chip hot pressing on the tin solder, make rare material melt and realize the welding to the chip, can improve the production efficiency of product from this, improve the yield and the reduction in production cost of product.)
1. A die bonding process for a semiconductor device, comprising the steps of:
s1, providing a carrier (100), providing a copper carrier (100) with a chip welding part, and arranging a tin material (300) on the chip welding part on the copper carrier (100);
and S2, pasting a chip (400) on the chip welding part by adopting a chip mounter.
2. The die bonding process of a semiconductor element according to claim 1, wherein the die bonder is a thermal die bonder, and a die bonding portion of the thermal die bonder is heated to 200 to 500 ℃ to bond the die (400).
3. The die bonding process of the semiconductor element according to claim 1, wherein the die pick-and-place machine is a chip pick-and-place device, and in the die bonding process, the bottom of the copper carrier (100) is heated at a position corresponding to the die bonding portion, so that the temperature of the tin material (300) reaches 200 to 500 ℃.
4. The die bonding process of the semiconductor device according to claim 3, wherein a recess (200) is formed on the copper carrier (100), and the die bonding portion is located in the recess (200).
5. The die attach process of claim 4, wherein the step S1 of providing the carrier (100) further comprises a step S11 of performing a surface treatment to remove the oxidation on the surface of the copper carrier (100).
6. The die bonding process of claim 1, wherein the tin material (300) is disposed on the die-bonding portion by electroplating using a plating solution.
7. The die bonding process for semiconductor devices as claimed in claim 6, wherein the plating solution is prepared using methanesulfonic acid and tin methanesulfonate.
8. The die bonding process of claim 7, wherein the plating solution contains H + ions in an amount of 120 to 140g/L, Sn2+ ions in an amount of 12 to 15g/L, and the temperature of the plating solution is 23 to 25 ℃.
9. A semiconductor device manufactured by the die bonding process for a semiconductor device according to any one of claims 1 to 8.
10. An electronic product comprising the semiconductor element according to any one of claims 1 to 8 processed by a die bonding process.
Technical Field
The invention relates to the technical field of semiconductor product processing, in particular to a die bonding process of a semiconductor element, the semiconductor element and an electronic product.
Background
In the packaging of semiconductor elements, generally, a chip is required to be fixed on a carrier, a bonding material is arranged on the carrier in a mode of printing solder paste in the prior art, and then the solder paste can influence the position of the chip when the chip is welded in a high-temperature reflow soldering mode after the chip is placed, so that the chip is not welded firmly, and the product percent of pass and the production efficiency are influenced.
Disclosure of Invention
One object of an embodiment of the present invention is to: a die bonding process for a semiconductor device is provided, which can solve the above problems in the prior art.
Another object of an embodiment of the present invention is to: a semiconductor element is provided which is high in product yield and high in production efficiency.
In order to achieve the purpose, the invention adopts the following technical scheme:
in one aspect, a die bonding process for a semiconductor device is provided, which includes the following steps:
s1, providing a carrier, providing a copper carrier with a chip welding part, and arranging a tin material on the chip welding part on the copper carrier;
and S2, pasting a chip on the chip welding part by adopting a chip mounter.
As a preferable technical scheme of the die bonding process of the semiconductor element, the die bonder of the die bonder is heated to 200 to 500 ℃ to bond the die by using a thermal die bonder.
As a preferable technical scheme of the die bonding process of the semiconductor element, the chip mounter is a chip gripper, and in the chip mounting process, the bottom of the copper carrier is heated at a position corresponding to the chip soldering portion, so that the temperature of the tin material reaches 200 to 500 ℃.
As a preferable technical solution of the die bonding process for the semiconductor element, a groove is provided on the copper carrier, and the die bonding portion is located in the groove.
As a preferable technical solution of the die attach process of the semiconductor device, the step S1 of providing the carrier further includes a step S11 of performing surface treatment, and performing a deoxidation treatment on the surface of the copper carrier.
In a preferred embodiment of the die bonding process for semiconductor devices, the solder material is disposed on the die-bonding portion by electroplating using a plating solution.
In a preferred embodiment of the die bonding process for a semiconductor device, the plating solution is prepared from methanesulfonic acid and tin methanesulfonate.
As one of the die bonding processes of the semiconductor elementIn a preferred embodiment, H is contained in the plating solution+Ion content of 120 to 140g/L, Sn2+The content of ions is 12 to 15g/L, and the temperature of the plating solution is 23 to 25 ℃.
On the other hand, a semiconductor element is provided, which is processed by the die bonding process of the semiconductor element.
In another aspect, an electronic product is provided, which has a semiconductor product processed by the die attach process of the semiconductor device as described above.
The invention has the beneficial effects that: this scheme is through setting up the tin solder on pure copper carrier, directly with chip hot pressing on the tin solder, make rare material melt and realize the welding to the chip, can improve the production efficiency of product from this, improve the yield and the reduction in production cost of product.
Drawings
The invention is explained in more detail below with reference to the figures and examples.
Fig. 1 is a flow chart of a die bonding process of a semiconductor device according to an embodiment of the invention.
Fig. 2 is a schematic structural diagram of a carrier with tin material disposed thereon according to an embodiment of the present invention.
Fig. 3 is a schematic diagram of a process of attaching the patch according to an embodiment of the present invention.
Fig. 4 is a schematic structural diagram of a finished product of the patch according to the embodiment of the invention.
In the figure:
100. a carrier; 200. a groove; 300. a tin material; 400. and (3) a chip.
Detailed Description
In order to make the technical problems solved, technical solutions adopted, and technical effects achieved by the present invention clearer, the technical solutions of the embodiments of the present invention are described in further detail below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, unless otherwise expressly specified or limited, the terms "connected," "connected," and "fixed" are to be construed broadly, e.g., as meaning permanently connected, removably connected, or integral to one another; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
As shown in fig. 1 to 4, the present embodiment provides a die bonding process for a semiconductor device, which includes the following steps:
s1, providing a
and S2, pasting the
According to the scheme, the tin solder is arranged on the
In the die attach process of the semiconductor element described in this embodiment, the die bonder of the die bonder is heated to 200 to 500 ℃ to bond the die 400.
Specifically, in this embodiment, the chip bonding head of the thermal die bonder is heated to 200 ℃ to perform die bonding on the
In other embodiments, the die bonding head of the thermal die bonder is heated to 300 ℃ to perform die bonding on the die 400.
In other embodiments, the die bonding head of the thermal die bonder is heated to 400 ℃ to bond the die 400.
In other embodiments, the die bonding head of the thermal die bonder is heated to 500 ℃ to bond the die 400.
In other embodiments, the chip mounter may further be a
In this embodiment, the temperature of the
In another embodiment of the invention, it is used to bring the temperature of the
In yet another embodiment of the present invention, a temperature of the
In another embodiment of the present invention, it is employed to bring the temperature of the
As a preferable technical solution of the die bonding process of the semiconductor device, a
By disposing the die bonding portion in the
As a preferable technical solution, in this embodiment, the step S1 of providing the
The appearance quality after tin plating can be ensured by the deoxidation treatment, so that the quality of the
In this embodiment, the
In the scheme, the content of H + ions in the electroplating solution is 120-140 g/L, the content of Sn2+ ions is 12-15 g/L, and the temperature of the electroplating solution is 23-25 ℃.
Specifically, in this embodiment, the content of H + ions in the plating solution is 130 to g/L, the content of Sn2+ ions is 14g/L, and the temperature of the plating solution is 24 ℃.
Meanwhile, the embodiment also provides a semiconductor element which is processed by adopting the die bonding process of the semiconductor element.
Meanwhile, the present embodiment also provides an electronic product having the semiconductor product processed by the die attach process of the semiconductor device as described above.
In the description herein, it is to be understood that the terms "upper," "lower," "left," "right," and the like are used in an orientation or positional relationship merely for convenience in description and simplicity of operation, and do not indicate or imply that the referenced device or element must have a particular orientation, configuration, and operation in a particular orientation, and therefore should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used merely for descriptive purposes and are not intended to have any special meaning.
In the description herein, references to the description of "an embodiment," "an example" or the like are intended to mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be appropriately combined to form other embodiments as will be appreciated by those skilled in the art.
The technical principle of the present invention is described above in connection with specific embodiments. The description is made for the purpose of illustrating the principles of the invention and should not be construed in any way as limiting the scope of the invention. Based on the explanations herein, those skilled in the art will be able to conceive of other embodiments of the present invention without inventive effort, which would fall within the scope of the present invention.
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