阅读说明：本技术 半导体装置及电力转换装置 (Semiconductor device and power conversion device ) 是由 井本裕儿 于 2017-12-13 设计创作，主要内容包括：目的在于提供一种能够抑制在树脂的不希望的部位产生裂纹的技术。半导体装置具有：电子电路(7),其包含半导体元件(4)；金属电极(5),其与电子电路(7)直接连接；以及封装树脂(6)。封装树脂(6)对电子电路(7)和金属电极(5)进行封装。金属电极(5)的与电子电路(7)相对侧的相反侧的面的端缘部分(5a)具有锐角形状,金属电极(5)的与电子电路(7)相对的面的端缘部分(5b)具有圆弧形状或者钝角形状。(The purpose is to provide a technique capable of suppressing the occurrence of cracks in an undesired part of a resin. The semiconductor device includes: an electronic circuit (7) including a semiconductor element (4); a metal electrode (5) directly connected to the electronic circuit (7); and an encapsulating resin (6). The encapsulating resin (6) encapsulates the electronic circuit (7) and the metal electrode (5). The edge portion (5a) of the surface of the metal electrode (5) on the opposite side to the electronic circuit (7) has an acute angle shape, and the edge portion (5b) of the surface of the metal electrode (5) on the opposite side to the electronic circuit (7) has an arc shape or an obtuse angle shape.)

1. A semiconductor device, comprising:

an electronic circuit including a semiconductor element;

a metal electrode directly connected to the electronic circuit; and

a resin encapsulating the electronic circuit and the metal electrode,

an edge portion of a surface of the metal electrode on the opposite side to the electronic circuit has an acute angle shape, and an edge portion of a surface of the metal electrode on the opposite side to the electronic circuit has a circular arc shape or an obtuse angle shape.

2. A semiconductor device, comprising:

an electronic circuit including a semiconductor element and a circuit element;

a metal electrode directly connected to the electronic circuit; and

a resin encapsulating the electronic circuit and the metal electrode,

the metal electrode has an acute-angled portion on the opposite side of the metal electrode from the circuit element, and the metal electrode has an arc shape or an obtuse-angled portion on the opposite side of the metal electrode from the circuit element.

3. The semiconductor device according to claim 2,

the circuit elements include conductive lines.

4. The semiconductor device according to claim 1,

the metal electrode has a shape bent upward at a portion on the end portion side.

5. The semiconductor device according to any one of claims 1 to 4,

the metal electrode is provided with a convex part,

the electronic circuit is disposed in a direction other than a direction in which a tip of the projection portion faces.

6. The semiconductor device according to claim 2,

the metal electrode is disposed on a side of the circuit element and above the semiconductor element,

the metal electrode is inclined with respect to the semiconductor element such that a portion of the metal electrode on an opposite side to the circuit element is closer to the semiconductor element than a portion of the metal electrode opposite to the circuit element.

7. The semiconductor device according to any one of claims 1 to 6,

the semiconductor element includes a wide bandgap semiconductor.

8. A semiconductor device using a semiconductor element,

the semiconductor device includes:

an electronic circuit including the semiconductor element and a circuit element;

a metal electrode directly connected to the electronic circuit, disposed on a side of the electronic circuit, and located above the semiconductor element; and

a resin encapsulating the electronic circuit and the metal electrode,

the metal electrode is inclined with respect to the semiconductor element such that a portion of the metal electrode on an opposite side to the circuit element is closer to the semiconductor element than a portion of the metal electrode opposite to the circuit element.

9. A power conversion device has:

a main converter circuit having the semiconductor device according to any one of claims 1 to 8, the main converter circuit converting and outputting power inputted thereto; and

a control circuit that outputs a control signal that controls the main conversion circuit to the main conversion circuit.

Technical Field

The present invention relates to a semiconductor device in which a metal electrode is encapsulated with a resin, and a power conversion device including the semiconductor device.

Background

In a case-type or transmission-type power module in which a metal electrode or the like is encapsulated with a resin, a structure in which a semiconductor element or a circuit surface is directly connected to the metal electrode tends to be used in order to cope with high reliability and large current. In this structure, although the connection reliability between the semiconductor element and the metal electrode is high, thermal stress that reduces the reliability is generated in a cold and hot environment due to the difference in linear expansion coefficient between the semiconductor element, the circuit surface on which the semiconductor element is mounted, and the metal electrode.

Various techniques have been proposed to reduce the influence of such thermal stress. For example, in the technique of patent document 1, the edge of the metal electrode is formed into a C-chamfered shape or an R-chamfered shape. According to such a configuration, it is possible to alleviate thermal stress that tends to concentrate on the side portions of the metal electrode, and to reduce the occurrence of cracks in the resin.

Patent document 1: japanese laid-open patent publication No. 2-240955

Disclosure of Invention

In order to further increase the current and lower the inductance, the above-described structure needs to be modified such that the metal electrode is thickened or is brought closer to the semiconductor element. However, since the difference between the linear expansion coefficient (for example, 4ppm/K) of the insulating substrate such as a semiconductor element or ceramic and the linear expansion coefficient (for example, 17ppm/K in the case of copper) of the metal electrode is large, if the above-described change is made, the stress ratio received by the resin from the metal electrode is large. Therefore, even if the edge portion is formed in a C-chamfered shape or an R-chamfered shape as in the technique of patent document 1, there is a problem that the occurrence of cracks in the resin cannot be suppressed, and the cracks may occur even in an undesired portion.

Further, if the linear expansion coefficient of the sealing resin is made close to the linear expansion coefficient of the metal electrode, resin cracks around the metal electrode can be reduced, but the difference between the linear expansion coefficients of the sealing resin and the insulating substrate becomes large. Therefore, the encapsulating resin is peeled off from the insulating substrate, and the reliability of the semiconductor device is lowered. Further, if a silicone flexible material is added to the sealing resin, although the resistance of the sealing resin against stress can be improved, there is a problem that the sealing resin becomes expensive.

The present invention has been made in view of the above problems, and an object thereof is to provide a technique capable of suppressing the occurrence of cracks in undesired portions of a resin.

The semiconductor device according to the present invention includes: an electronic circuit including a semiconductor element; a metal electrode directly connected to the electronic circuit; and a resin that encapsulates the electronic circuit and the metal electrode, wherein an end edge portion of a surface of the metal electrode on the opposite side to the electronic circuit has an acute angle shape, and an end edge portion of a surface of the metal electrode facing the electronic circuit has an arc shape or an obtuse angle shape.

ADVANTAGEOUS EFFECTS OF INVENTION

According to the present invention, the edge portion of the surface of the metal electrode on the opposite side to the electronic circuit has an acute angle shape, and the edge portion of the surface of the metal electrode on the opposite side to the electronic circuit has a circular arc shape or an obtuse angle shape. With such a structure, it is possible to suppress the occurrence of cracks in undesired portions of the resin.

The objects, features, aspects and advantages of the present invention will become more apparent from the following detailed description and the accompanying drawings.

Drawings

Fig. 1 is a cross-sectional view showing a schematic structure of a related semiconductor device.

Fig. 2 is a cross-sectional view showing a schematic configuration of the semiconductor device according to embodiment 1.

Fig. 3 is a cross-sectional view showing a schematic configuration of a semiconductor device according to embodiment 2.

Fig. 4 is a cross-sectional view showing a schematic configuration of a semiconductor device according to embodiment 3.

Fig. 5 is a cross-sectional view showing a schematic configuration of a semiconductor device according to embodiment 4.

Fig. 6 is a cross-sectional view showing a schematic configuration of a semiconductor device according to embodiment 5.

Fig. 7 is a cross-sectional view showing a schematic configuration of a semiconductor device according to embodiment 5.

Fig. 8 is a block diagram showing a configuration of a power conversion system to which the power conversion device according to embodiment 6 is applied.

Detailed Description

< associated semiconductor device >

First, before a semiconductor device according to an embodiment of the present invention is described, a related semiconductor device (hereinafter, referred to as a related semiconductor device) will be described.

Fig. 1 is a cross-sectional view showing a schematic structure of a related semiconductor device. As shown in fig. 1, an insulating substrate 2 is disposed on a base plate 1. A metal member 2a such as a circuit pattern is provided on the insulating substrate 2. The semiconductor element 4 is bonded to the metal member 2a of the insulating substrate 2 with a bonding material such as solder 3 a. The metal electrode 5 is bonded to the semiconductor element 4 with a bonding material such as solder 3 b. The encapsulating resin 6 encapsulates the semiconductor element 4 and the metal electrode 5.

Here, the end edge portion 5a of the upper surface of the metal electrode 5 and the end edge portion 5b of the lower surface of the metal electrode 5 each have an R shape. With this structure, the concentration of stress applied to the sealing resin 6 by the side surface of the metal electrode 5 can be relaxed.

However, in a semiconductor device in which a large current and a low inductance have been advanced, even in the structure of fig. 1, the occurrence of cracks in the encapsulating resin 6 may not be suppressed. Further, there is a problem that the crack may be generated in an undesired portion, for example, a peripheral portion of the semiconductor element 4, and the reliability of the semiconductor device may be lowered. In contrast, the semiconductor device according to the present embodiment can solve such a problem.

< embodiment 1 >

Fig. 2 is a cross-sectional view showing a schematic configuration of a semiconductor device according to embodiment 1 of the present invention. In addition, among the components according to embodiment 1, the same or similar components as those of the related semiconductor device will be described with the same reference numerals.

The semiconductor device of fig. 2 includes a base plate 1, an insulating substrate 2, solders 3a and 3b, a semiconductor element 4, a metal electrode 5, and a sealing resin 6 as a resin. The semiconductor device is used, for example, in an inverter or a regenerative converter for controlling a motor of consumer equipment, an electric vehicle, an electric train, or the like.

An insulating substrate 2 is disposed on the base plate 1. The base plate 1 contains copper (Cu), for example, and the insulating substrate 2 contains ceramic, for example. The insulating substrate 2 may be mounted on the base plate 1 without being integrated with the base plate 1, or may be integrated with the base plate 1. The back surface of the base plate 1 may be integrated with a cooler such as pin fins, instead of being a flat surface.

A metal member 2a such as a circuit pattern is provided on the insulating substrate 2. The semiconductor element 4 is bonded to the metal member 2a of the insulating substrate 2 with a bonding material such as solder 3 a.

The electronic circuit 7 is a circuit including the base plate 1, the insulating substrate 2, the solders 3a and 3b, and the semiconductor element 4, and the electronic circuit 7 is directly connected to the metal electrode 5.

The metal electrode 5 is disposed above the semiconductor element 4, and is electrically connected to the semiconductor element 4 via the solder 3 b. The metal electrode 5 is, for example, an electrode terminal, and contains at least one of copper, aluminum, and other metal materials. Further, the bonding between the circuit pattern and the semiconductor element 4 and the bonding between the semiconductor element 4 and the metal electrode 5 are not limited to solder bonding. These bonds may also be silver (Ag) bonds, for example.

In embodiment 1, the upper surface of the metal electrode 5 is a surface opposite to the electronic circuit 7, and the lower surface of the metal electrode 5 is a surface opposite to the electronic circuit 7. The edge portion 5a of the upper surface of the metal electrode 5 has an acute angle shape, and the edge portion 5b of the lower surface of the metal electrode 5 has a C-chamfered shape which is an obtuse angle shape. The end edge portion 5b of the metal electrode 5 may have an R-shape, which is an arc shape, instead of the C-chamfered shape.

The encapsulating resin 6 encapsulates the electronic circuit 7 and the metal electrode 5. Thus, the periphery of the semiconductor element 4 and the metal electrode 5 is filled with the sealing resin 6.

< summary of embodiment 1 >

If the metal electrode 5 is heated or generates heat by temperature cycle or power cycle, the metal electrode 5 expands, but the encapsulating resin 6 in contact with the semiconductor element 4 and the insulating substrate 2 having low linear expansion coefficients is restrained by these. Therefore, the encapsulating resin 6 receives stress from the metal electrode 5. At this time, the sealing resin 6 is less likely to receive stress from the edge portion 5b having the obtuse angle shape in a concentrated manner, and is more likely to receive stress from the edge portion 5a having the acute angle shape in a concentrated manner.

Therefore, even if a crack occurs in the sealing resin 6, a crack 8 that is relatively distant from the electronic circuit 7 with the end edge portion 5a as a starting point is preferentially generated. After the crack 8 starting from the end edge portion 5a is generated, the stress received by the sealing resin 6 from the metal electrode 5 is reduced, and therefore, the generation of the crack in the vicinity of the electronic circuit 7 can be suppressed.

As described above, according to the semiconductor device of embodiment 1, the crack generation site can be controlled, and the crack generation in an undesired site and direction such as a peripheral site of the semiconductor element 4 can be suppressed.

As a result, cracking and the like of the semiconductor element 4 can be suppressed, and the reliability and the life of the semiconductor device in a cold and hot environment can be improved. Further, it is not necessary to perform special characteristic adjustment of the sealing resin 6 and coating for the purpose of adding stress relaxation to the end face of the metal electrode 5, and thus an increase in cost can be suppressed. In addition, the metal electrode 5 can be formed by press working, and the shape of the processing object can be easily changed by changing the design of the table of the progressive die, so that additional cost of the product can be suppressed. Furthermore, it is sufficient to take the above-described measures only at the minimum necessary for reliability, and it is not necessary to strictly manage the resin physical properties and the design parameters in the assembly process that may affect reliability, and therefore, it is also possible to expect suppression of increase in management cost and suppression of failure rate.

The semiconductor element 4 may be made of silicon (Si), or may be made of a wide bandgap semiconductor such as silicon carbide (SiC) or gallium nitride (GaN). In particular, since the wide band gap semiconductor has high temperature resistance, the effect of improving the reliability in a cold and hot environment as described above is particularly effective in a structure in which the semiconductor element 4 of the semiconductor device is made of a wide band gap semiconductor. The semiconductor element 4 may be a MOSFET, an IGBT, an SBD, a PN diode, or the like, for example.

< embodiment 2 >

Fig. 3 is a cross-sectional view showing a schematic configuration of a semiconductor device according to embodiment 2 of the present invention. In the following, the same reference numerals are given to the same or similar components as those described above among the components according to embodiment 2, and different components will be mainly described.

The semiconductor device of fig. 3 includes a base plate 1, an insulating substrate 2, solders 3a and 3b, a semiconductor element 4, a metal electrode 5, a sealing resin 6 as a resin, and a wire 9 as a circuit element.

The lead wire 9 is, for example, an aluminum wire, and is connected to the semiconductor element 4. The metal electrode 5 is disposed on the side of the lead wire 9 and above the semiconductor element 4, and is electrically connected to the lead wire 9 via the semiconductor element 4 and the solder 3 b.

The electronic circuit 7 is a circuit including the base plate 1, the insulating substrate 2, the solders 3a and 3b, the semiconductor element 4, and the lead wire 9, and the electronic circuit 7 is directly connected to the metal electrode 5. The encapsulating resin 6 encapsulates the electronic circuit 7 and the metal electrode 5.

In embodiment 2, the side portion 5c, which is the portion of the metal electrode 5 opposite to the lead wire 9, has an acute angle shape, and the side portion 5d, which is the portion of the metal electrode 5 opposite to the lead wire 9, has an R-shape, which is an arc shape. The side portion 5d may have a C-chamfered shape or a substantially R-shape formed by bending at the time of pressing as in embodiment 3 described later. In fig. 3, the central portion in the thickness direction of the side portion 5c has an acute angle shape, but the edge portion of the upper surface of the metal electrode 5 may have an acute angle shape as in embodiment 1 (fig. 2).

< summary of embodiment 2 >

According to the semiconductor device according to embodiment 2 as described above, as in embodiment 1, the crack 8 that is relatively distant from the lead wire 9 with the side portion 5c as a starting point can be preferentially generated. Therefore, cracks can be suppressed from occurring at undesired positions such as the periphery of the lead wire 9. As a result, disconnection of the lead wires 9 can be suppressed, and reliability and life of the semiconductor device can be improved.

< embodiment 3 >

Fig. 4 is a cross-sectional view showing a schematic configuration of a semiconductor device according to embodiment 3 of the present invention. In the following, the same reference numerals are given to the same or similar components as those described above among the components according to embodiment 3, and different components will be mainly described.

In the semiconductor device of fig. 4, the portion of the metal electrode 5 on the side of the end 5e (the portion near the end 5 e) in fig. 2 has a shape bent upward. That is, the portion near the end 5e of the metal electrode 5 has a shape bulging upward. Thus, the lower end edge portion 5b has a substantially R-shape formed by bending at the time of pressing. The above shape can be formed by bending a flat metal electrode by, for example, pressing. However, the shape is not limited to this, and the central portion 5f of the metal electrode may be thinned by machining such as cutting.

< summary of embodiment 3 >

According to the semiconductor device according to embodiment 3 as described above, the upper edge portion 5a where the crack 8 is likely to occur can be separated from the semiconductor element 4 as compared with embodiment 1, and therefore the portion where the crack occurs can be controlled more effectively, and the reliability and the life of the semiconductor device can be further improved. In addition, in general, bending stress that hinders the extension in the depth direction of fig. 4 of the metal electrode 5 may be generated due to stress generated at the time of product assembly such as a welding process. In contrast, according to embodiment 3, since the strength against the bending stress can be increased by the shape of fig. 4, deformation of the metal electrode 5 can be suppressed, and the product quality can be improved.

< embodiment 4 >

Fig. 5 is a plan view showing a schematic structure of a metal electrode 5 of a semiconductor device according to embodiment 4 of the present invention. In the following, the same reference numerals are given to the same or similar components as those described above among the components according to embodiment 4, and different components will be mainly described.

As shown in fig. 5, in embodiment 4, the metal electrode 5 has a projection 5g, and the electronic circuit 7 including the semiconductor element 4 and the lead wire 9 is arranged in a direction other than a direction in which a tip of the projection 5g faces. In fig. 5, the shape of the projection 5g is substantially triangular, but may be an arrow shape or the like. In fig. 5, the tip of each of the projections 5g is directed in the planar direction of the metal electrode 5, and the projections 5g are provided at positions sandwiching the semiconductor element 4 and the lead wire 9 in a plan view. For example, the protrusion 5g may be provided at a portion where it is desired to generate the crack 8 preferentially.

< summary of embodiment 4 >

According to embodiment 4 as described above, the portion where the crack is generated can be controlled more effectively. In addition, the occurrence of cracks can be dispersed, and the size of each crack can be reduced.

< embodiment 5 >

Fig. 6 is a plan view showing a schematic structure of a metal electrode 5 of a semiconductor device according to embodiment 5 of the present invention. In the following, the same reference numerals are given to the same or similar components as those described above among the components according to embodiment 5, and different components will be mainly described.

As shown in fig. 6, in embodiment 5, metal electrode 5 is inclined with respect to semiconductor element 4 such that side portion 5c, which is the portion of metal electrode 5 on the opposite side from lead 9, is closer to semiconductor element 4 than side portion 5d, which is the portion of metal electrode 5 opposite to lead 9.

< summary of embodiment 5 >

The side portion 5c of the metal electrode 5 close to the semiconductor element 4 is relatively affected by the difference in the linear expansion coefficients of the metal electrode 5 and the semiconductor element 4, and the side portion 5d of the metal electrode 5 distant from the semiconductor element 4 is relatively affected by the difference in the linear expansion coefficients of the metal electrode 5 and the semiconductor element 4. Therefore, the stress received by the sealing resin 6 from the side portion 5c of the metal electrode 5 is greater than the stress received by the sealing resin 6 from the side portion 5d of the metal electrode 5, and therefore, the crack 8 that starts from the side portion 5c and is relatively distant from the lead wire 9 can be preferentially generated. Therefore, the crack site can be effectively controlled.

In addition, although the configuration in embodiment 2 is described above as being applied to embodiment 5, the present invention can be applied to other embodiments 1, 3, 4, and the like, and can also be applied to related semiconductor devices as shown in fig. 7.

< embodiment 6 >

A power conversion device according to embodiment 6 of the present invention is a power conversion device including a main conversion circuit including the semiconductor device according to any one of embodiments 1 to 5. The semiconductor device described above is not limited to a specific power conversion device, and a case where the semiconductor device according to any one of embodiments 1 to 5 is applied to a three-phase inverter will be described below as embodiment 6.

Fig. 8 is a block diagram showing a configuration of a power conversion system to which the power conversion device according to embodiment 6 is applied.

The power conversion system shown in fig. 8 includes a power source 100, a power conversion device 200, and a load 300. The power supply 100 is a dc power supply and supplies dc power to the power conversion device 200. The power supply 100 may be configured by various power supplies, and may be configured by, for example, a DC system, a solar cell, or a storage battery, or may be configured by a rectifier circuit or an AC/DC converter connected to an AC system. The power supply 100 may be configured by a DC/DC converter that converts DC power output from the DC system into predetermined power.

Power conversion device 200 is a three-phase inverter connected between power supply 100 and load 300, and converts dc power supplied from power supply 100 into ac power and supplies ac power to load 300. As shown in fig. 8, the power conversion apparatus 200 includes: a main converter circuit 201 that converts dc power into ac power and outputs the ac power; and a control circuit 203 that outputs a control signal that controls the main conversion circuit 201 to the main conversion circuit 201.

The load 300 is a three-phase motor driven by ac power supplied from the power conversion device 200. The load 300 is not limited to a specific application, and is a motor mounted on various electric devices, for example, a motor for a hybrid car, an electric car, a railway vehicle, an elevator, or an air conditioner.

Next, the power converter 200 will be described in detail. The main converter circuit 201 includes a switching element and a flywheel diode (not shown), and converts dc power supplied from the power supply 100 into ac power by turning on and off the switching element, and supplies the ac power to the load 300. The main converter circuit 201 has various specific circuit configurations, and the main converter circuit 201 according to embodiment 6 is a 2-level three-phase full bridge circuit and can be configured with 6 switching elements and 6 freewheeling diodes connected in reverse parallel to the respective switching elements. At least one of the switching elements and the free wheel diodes of the main conversion circuit 201 is formed of a semiconductor module 202 to which the semiconductor device according to any one of embodiments 1 to 5 is applied. Two of the 6 switching elements are connected in series to form upper and lower arms, and each of the upper and lower arms forms each phase (U-phase, V-phase, W-phase) of the full bridge circuit. Further, 3 output terminals of main converter circuit 201, which are output terminals of the upper and lower arms, are connected to load 300.

The main converter circuit 201 includes a driver circuit (not shown) for driving each switching element, but the driver circuit may be incorporated in the semiconductor module 202 or may be provided separately from the semiconductor module 202. The drive circuit generates a drive signal for driving the switching element of the main converter circuit 201, and supplies the drive signal to the control electrode of the switching element of the main converter circuit 201. Specifically, the drive circuit outputs a drive signal for turning the switching element on and a drive signal for turning the switching element off to the control electrode of each switching element in accordance with a control signal from the control circuit 203 described later. The drive signal is a voltage signal (on signal) greater than or equal to the threshold voltage of the switching element when the switching element is maintained in the on state, and is a voltage signal (off signal) less than or equal to the threshold voltage of the switching element when the switching element is maintained in the off state.

The control circuit 203 controls the switching elements of the main converter circuit 201 to supply a desired power to the load 300. Specifically, the control circuit 203 calculates a time (on time) at which each switching element of the main converter circuit 201 should be brought into an on state based on the power to be supplied to the load 300. For example, the control circuit 203 can control the main converter circuit 201 by pwm (pulse Width modulation) control for modulating the on time of the switching element in accordance with the voltage to be output. Then, the control circuit 203 outputs a control command (control signal) to the drive circuit provided in the main conversion circuit 201 so as to output an on signal to the switching element to be turned on at each time point and output an off signal to the switching element to be turned off. The drive circuit outputs an on signal or an off signal as a drive signal to the control electrode of each switching element in accordance with the control signal.

In the power converter according to embodiment 6 described above, the semiconductor devices according to embodiments 1 to 5 are applied to at least one of the switching element and the flywheel diode of the main converter circuit 201, and therefore, it is possible to suppress the occurrence of cracks in an undesired portion of the resin.

In embodiment 6 described above, an example has been described in which the semiconductor device according to any one of embodiments 1 to 5 is applied to a 2-level three-phase inverter, but embodiment 6 is not limited thereto, and can be applied to various power conversion devices. In embodiment 6, the semiconductor device according to any one of embodiments 1 to 5 is a 2-level power conversion device, but may be a 3-level or multilevel power conversion device, and when power is supplied to a single-phase load, the semiconductor device may be applied to a single-phase inverter. In addition, the semiconductor device can be applied to a DC/DC converter or an AC/DC converter when power is supplied to a DC load or the like.

The power converter according to embodiment 6 is not limited to the case where the load is a motor, and may be used as a power supply device for an electric discharge machine, a laser machine, an induction heating cooker, or a non-contactor power supply system, or may be used as a power conditioner for a solar power generation system, a power storage system, or the like.

In addition, the present invention can freely combine the respective embodiments, or appropriately modify or omit the respective embodiments within the scope of the invention.

Although the present invention has been described in detail, the above description is illustrative in all aspects, and the present invention is not limited thereto. It is understood that numerous modifications not illustrated can be devised without departing from the scope of the invention.

Description of the reference numerals

4 semiconductor elements, 5 metal electrodes, 5a, 5b end edge portions, 5c, 5d side portions, 5e end portions, 5g bump portions, 6 encapsulating resin, 7 electronic circuits, 9 leads.