阅读说明：本技术 一种立体集成整流阵列及其制作方法 (Three-dimensional integrated rectifier array and manufacturing method thereof ) 是由 陈夏冉 朱晓辉 汪冰 门国捷 刘小为 张崎 刘俊夫 王超 朱喆 于 2019-12-16 设计创作，主要内容包括：本发明公开了一种立体集成整流阵列及其制作方法,包括：AMB-陶瓷基板,其上端面沿其四周固设有金属环框,所述金属环框与所述AMB-陶瓷基板形成一腔体,位于所述腔体内的AMB-陶瓷基板上开设有通孔,所述通孔内填塞有铜柱；第一焊盘,其包括阳极焊盘Pn和阴极焊盘Nn,所述第一焊盘焊接在所述铜柱的上表面和下表面,且所述阳极焊盘Pn和所述阴极焊盘Nn间隔排布,同一所述铜柱上焊接的第一焊盘的类型相同；二极管芯片,其位于所述腔体内且设于所述阳极焊盘Pn的上端面,所述二极管芯片与相邻的阴极焊盘Nn互联；将所述腔体封盖的金属盖板。本发明中的立体集成整流阵列尺寸小、重量轻、可靠性高且气密性好。(The invention discloses a three-dimensional integrated rectifier array and a manufacturing method thereof, wherein the three-dimensional integrated rectifier array comprises the following steps: the metal ring frame is fixedly arranged on the upper end face of the AMB-ceramic substrate along the periphery of the AMB-ceramic substrate, a cavity is formed by the metal ring frame and the AMB-ceramic substrate, a through hole is formed in the AMB-ceramic substrate positioned in the cavity, and a copper column is filled in the through hole; the first bonding pads comprise anode bonding pads Pn and cathode bonding pads Nn, the first bonding pads are welded on the upper surface and the lower surface of the copper column, the anode bonding pads Pn and the cathode bonding pads Nn are arranged at intervals, and the types of the first bonding pads welded on the same copper column are the same; the diode chip is positioned in the cavity and arranged on the upper end face of the anode bonding pad Pn, and the diode chip is interconnected with the adjacent cathode bonding pad Nn; and the metal cover plate is used for covering the cavity. The three-dimensional integrated rectifying array has the advantages of small size, light weight, high reliability and good air tightness.)

1. A three-dimensional integrated rectifier array, comprising:

the metal ring frame is fixedly arranged on the upper end face of the AMB-ceramic substrate along the periphery of the AMB-ceramic substrate, a cavity is formed by the metal ring frame and the AMB-ceramic substrate, a through hole is formed in the AMB-ceramic substrate positioned in the cavity, and a copper column is filled in the through hole;

the first bonding pads comprise anode bonding pads Pn and cathode bonding pads Nn, the first bonding pads are welded on the upper surface and the lower surface of the copper column, the anode bonding pads Pn and the cathode bonding pads Nn are arranged at intervals, and the types of the first bonding pads welded on the same copper column are the same;

the diode chip is positioned in the cavity and arranged on the upper end face of the anode bonding pad Pn, and is connected with the adjacent cathode bonding pad Nn in an interconnection mode through aluminum wire bonding;

and the metal cover plate is arranged at the upper end of the metal ring frame and used for sealing the cavity.

2. The monolithically integrated rectification array of claim 1, wherein the AMB-ceramic substrate is an AMB-AlN ceramic substrate.

3. The monolithically integrated rectifier array of claim 1 wherein said metal ring frame is a kovar metal ring frame.

4. The stereoscopic integrated rectifier array of claim 1, further comprising:

and the second bonding Pad is a Pad bonding Pad, is welded at the bottom of the AMB-ceramic substrate and is not connected with the first bonding Pad.

5. The monolithically integrated rectifier array of claim 4, wherein said second bonding pad is located at a bottom center location of said AMB-ceramic substrate.

6. The three-dimensional integrated rectifier array according to claim 1, wherein the through holes are arranged in an array around the AMB-ceramic substrate, and the anode pads Pn and the cathode pads Nn are arranged at intervals.

7. The three-dimensional integrated rectifying ballast according to claim 1, wherein the diode chips are stacked chips, the stacked chips are formed by stacking two layers of diode bare chips in series, and the diode bare chips on the upper layer of the stacked chips are interconnected with the adjacent cathode pads Nn by aluminum wire bonding.

8. A method of fabricating a three-dimensional integrated rectifying array according to any of claims 1 to 7, comprising the steps of:

cleaning the ceramic substrate, and annealing and cleaning the copper sheet;

punching a through hole on the cleaned ceramic substrate, cleaning again, filling a copper column in the through hole, printing an active solder on the surface of the ceramic substrate, and welding the cleaned copper sheet with the ceramic substrate through an active soldering process;

removing impurities or waste materials on the ceramic substrate, and after the circuit is manufactured, performing laser scribing to obtain an AMB-ceramic substrate;

heating the AMB-ceramic substrate filled with the copper columns to soften the copper materials, and applying external force to enable the copper-clad depressions of the substrate to be deformed and to be in contact with the copper columns;

welding a first bonding pad on the upper surface and the lower surface of the copper column, and welding a second bonding pad on the bottom of the AMB-ceramic substrate;

manufacturing a diode chip on an anode bonding pad Pn positioned on the upper end face of the AMB-ceramic substrate, and interconnecting the diode chip with an adjacent cathode bonding pad Nn through aluminum wire bonding;

and after welding the metal ring frame on the upper end surface of the AMB-ceramic substrate, sealing and covering the metal ring frame by using a metal cover plate by adopting parallel sealing and welding to realize airtight packaging.

9. The method of claim 1, wherein the active solder comprises a composition of Ti-Ag-Cu and an organic vehicle.

Technical Field

The invention belongs to the field of electronic devices, and particularly relates to a three-dimensional integrated rectifier array and a manufacturing method thereof.

Background

The high-density subminiature rectifier array has the characteristics of high chip integration level, small volume and flexible application, can save space and simplify circuit layout area, accords with the development trend of miniaturization and light weight of devices for aerospace models, and gradually becomes a core component used by the current military communication satellite, a navigation system and a manned aerospace engineering microwave data transmission system. The centralized control of multiple high-power-density signals in a satellite system must be realized by adopting a high-power-density multi-channel integrated switch. In addition, functions such as half-wave rectification, full-wave rectification, bridge rectification and the like which are widely applied in the high-voltage output power supply of the aerospace system are realized by series-parallel connection of discrete rectifier diodes with different structural forms, wiring is complex and miniaturization is not facilitated, and according to different rectification requirements, a rectification circuit needs to be designed into different structures, so that compatibility and reconfigurability are poor.

The rectifier diode device for aerospace satellite-borne use in China still mainly comprises a single chip and a single tube, no manufacturer has ever provided a high-density miniaturized multi-chip three-dimensional integrated array product, and the technical aspect of process manufacturing still faces a lot of difficulties. The products become a significant technical bottleneck restricting the development of satellite data transmission systems in China.

Disclosure of Invention

In view of the above, the present invention provides a three-dimensional integrated rectifying array and a manufacturing method thereof, in which an AMB-ceramic substrate is used as a core of the three-dimensional integrated rectifying array, the AMB-ceramic substrate and a metal ring frame are welded to form a cavity, an independent rectifying channel is formed in the cavity, and a bonding pad is disposed at the bottom of the cavity, so that the rectifying array has a small volume, a light weight, a large power, a reconfigurable topology and an excellent air tightness, and solves the technical problems that the existing rectifying array has poor compatibility and reconfigurability and cannot be miniaturized at a high density.

In order to achieve the purpose, the invention adopts the following technical scheme:

a stereoscopic integrated rectifier array comprising:

the metal ring frame is fixedly arranged on the upper end face of the AMB-ceramic substrate along the periphery of the AMB-ceramic substrate, a cavity is formed by the metal ring frame and the AMB-ceramic substrate, a through hole is formed in the AMB-ceramic substrate positioned in the cavity, and a copper column is filled in the through hole;

the first bonding pads comprise anode bonding pads Pn and cathode bonding pads Nn, the first bonding pads are welded on the upper surface and the lower surface of the copper column, the anode bonding pads Pn and the cathode bonding pads Nn are arranged at intervals, and the types of the first bonding pads welded on the same copper column are the same;

the diode chip is positioned in the cavity and arranged on the upper end face of the anode bonding pad Pn, and is connected with the adjacent cathode bonding pad Nn in an interconnection mode through aluminum wire bonding;

and the metal cover plate is arranged at the upper end of the metal ring frame and used for sealing the cavity.

Further, the AMB-ceramic substrate is an AMB-AlN ceramic substrate.

Further, the metal ring frame is a kovar metal ring frame.

Further, it still includes:

and the second bonding Pad is a Pad bonding Pad, is welded at the bottom of the AMB-ceramic substrate and is not connected with the first bonding Pad.

Preferably, the second bonding pad is located at the bottom center of the AMB-ceramic substrate.

Further, the through holes are arranged in an array around the periphery of the AMB-ceramic substrate, and the anode pads Pn and the cathode pads Nn are arranged at intervals.

Further, the diode chip is a stacked chip, two layers of diode bare chips are stacked in series, and the diode bare chip on the upper layer of the stacked chip is connected with the adjacent cathode bonding pad Nn in an interconnection mode through aluminum wire bonding.

The invention also provides a manufacturing method of the three-dimensional integrated rectifier array, which comprises the following steps:

cleaning the ceramic substrate, and annealing and cleaning the copper sheet;

punching a through hole on the cleaned ceramic substrate, cleaning again, filling a copper column in the through hole, printing an active solder on the surface of the ceramic substrate, and welding the cleaned copper sheet with the ceramic substrate through an active soldering process;

removing impurities or waste materials on the ceramic substrate, and after the circuit is manufactured, performing laser scribing to obtain an AMB-ceramic substrate;

heating the AMB-ceramic substrate filled with the copper columns to soften the copper materials, and applying external force to enable the copper-clad depressions of the substrate to be deformed and to be in contact with the copper columns;

welding a first bonding pad on the upper surface and the lower surface of the copper column, and welding a second bonding pad on the bottom of the AMB-ceramic substrate;

manufacturing a diode chip on an anode bonding pad Pn positioned on the upper end face of the AMB-ceramic substrate, and interconnecting the diode chip with an adjacent cathode bonding pad Nn through aluminum wire bonding;

and after welding the metal ring frame on the upper end surface of the AMB-ceramic substrate, sealing and covering the metal ring frame by using a metal cover plate by adopting parallel sealing and welding to realize airtight packaging.

Furthermore, the active solder comprises Ti-Ag-Cu and an organic carrier.

Compared with the prior art, the invention has the following beneficial effects:

1. the invention adopts the AMB-ceramic metal integrated shell, the internal diode chips are interconnected through chip stacking and bonding, the whole rectifier array has small packaging size, and the miniaturization, light weight, air tightness and high reliability of the rectifier array can be realized.

2. The invention adopts an SMD structure, can realize the current through-current capacity expansion of 20A, and can vertically and downwards transmit the heat dissipation of each channel through the copper column bonding pad, thereby ensuring the heat dissipation performance of the device.

3. The invention has reconfigurable topology, can realize the topology reconfiguration through external wiring according to the use requirement, and has flexible application and good compatibility.

Drawings

FIG. 1 is a schematic cross-sectional view of a three-dimensional integrated rectifier array according to a preferred embodiment of the present invention;

FIG. 2 is a schematic diagram of an internal structure of a cavity of a three-dimensional integrated rectifier array according to a preferred embodiment of the present invention;

FIG. 3 is a schematic diagram of a bottom pad layout of a three-dimensional integrated rectifier array according to a preferred embodiment of the present invention;

fig. 4 is a circuit structure diagram of a three-dimensional integrated rectifying array in a preferred embodiment of the invention.

In the figure: the device comprises a 1-AMB-AlN ceramic substrate, a 2-copper column, a 3-metal ring frame, a 4-metal cover plate, a 5-first bonding pad, a 51-anode bonding pad Pn, a 52-cathode bonding pad Nn, a 6-diode chip, a 7-aluminum wire and an 8-second bonding pad.

Detailed Description

In order that the invention may be more fully understood, reference will now be made to the following description of specific embodiments. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.

As shown in fig. 1, a three-dimensional integrated rectifying array includes an AMB-AlN ceramic substrate 1, and it is understood that the AMB-AlN ceramic substrate 1 is a preferred embodiment of the present invention, and other ceramic substrates in the art can be selected as the ceramic substrate, and the AlN ceramic substrate is preferred in this embodiment because of its high thermal conductivity. Specifically, the AMB-AlN ceramic substrate 1 is an SMD structure formed by an AMB process, specifically, the ceramic substrate is coated with active solder and then subjected to active soldering to join ceramic and metal, and the ceramic substrate is applied to the field of structural packaging for the first time, and the AMB-AlN ceramic substrate 1 utilizes a small amount of active elements contained in the solder to react with the ceramic to generate a reaction layer which can be wetted by the liquid solder, so as to realize the joining of the ceramic and the metal and ensure the airtightness of the packaging.

Referring to fig. 2 and fig. 1, further, a metal ring frame 3 is fixedly disposed on the upper end surface of the AMB-AlN ceramic substrate 1 along the periphery thereof, wherein the metal ring frame 3 may be made of a material commonly used in the field of metal package. So that the AMB-AlN ceramic substrate 1 and the metal ring frame 3 form a cavity in which the circuit structure of the rectifying array is wired in this embodiment. Specifically, a through hole is formed in the AMB-AlN ceramic substrate 1 in the cavity, the copper column 2 is filled in the through hole, the first bonding pads 5 are welded on the upper surface and the lower surface of the copper column 2, and preferably, the tight connection of the first bonding pads 5 on the upper surface and the lower surface is ensured, so that the through-current capacity of large current is realized, the heat dissipation of each channel can be vertically conducted downwards through the copper column 2, and the efficient heat dissipation is realized. The first pads 5 herein include anode pads Pn51 and cathode pads Nn52, and the types of the first pads 5 welded to the upper and lower surfaces of the same copper pillar 2 are the same, that is, the upper and lower surfaces of the same copper pillar 2 are welded to either the anode pads Pn51 or the cathode pads Nn52, the anode pads Pn51 and the cathode pads Nn52 are arranged at intervals, and the distance between the first pads 5 is a safe distance, which is not described herein again specifically, and in this embodiment, the distance between the first pads 5 is selected to be 0.5 mm. Preferably, in this embodiment, the through holes are arranged in an array around the periphery of the AMB-AlN ceramic substrate 1, so that the first pads 5 are also arranged in an array, and the anode pads Pn51 and the cathode pads Nn52 are arranged at intervals.

Further, a diode chip 6 is connected to the upper end surface of the anode pad Pn51 located in the cavity, and as shown in fig. 1, the diode chip 6 is interconnected with the adjacent cathode pad Nn by aluminum wire bonding. Further, in the present embodiment, the diode chip 6 is a stacked chip, and is formed by stacking and serially connecting two layers of diode bare chips, as shown in fig. 2, the diode bare chip on the uppermost layer is bonded to the adjacent cathode pad Nn52 through the aluminum wire 7, so as to achieve interconnection, it is understood that the number of the aluminum wires 7 may be 2 or more than 3, and the number is adjusted as needed, and is not limited specifically here.

In the circuit connection of the rectifier array in this embodiment, as shown in fig. 2 in particular, 8 diode chips 6 form 8 independent rectifier channels, and each rectifier channel is connected in series end to end by an anode pad Pn51, a cathode pad Nn52 adjacent to the anode pad Pn51, and a diode chip 6 disposed on the anode pad Pn 51. The arrangement of the first bonding pads 5 at the bottom of the AMB-AlN ceramic substrate 1 is as shown in fig. 3, a second bonding Pad 8 is further welded at the middle, the second bonding Pad 8 is a Pad bonding Pad, and is not electrically connected with the surrounding first bonding pads 5, and is mainly used for heat dissipation and ensuring the reliability of welding, the specific position of the second bonding Pad can be adjusted as required, and in this embodiment, the second bonding Pad is preferably welded at the center of the bottom. Specifically, the circuit structure of 8 rectifying channels is as shown in fig. 4, and topology reconstruction can be realized by changing the series-parallel connection relationship of each rectifying channel externally, so that functions of half-wave rectification, full-wave rectification, bridge rectification, high-voltage rectification and the like are satisfied.

The three-dimensional integrated rectifying array in this embodiment is small in size, 11.5mm × 11.5mm × 3.2mm, the sizes of P1, P3, P5, and P7 in the anode pad Pn51 are 2.7mm × 2.7mm, the sizes of the remaining pads N1, P2, N2, N3, P4, N4, N5, P6, N6, N7, P8, and N8 are 1.3mm × 2.7mm, the size of the second pad 8 is designed to be 4.9mm × 4.9mm, as shown in fig. 2 and 3, the anode pad Pn51 and the cathode pad Nn52 are arranged at intervals, and the anode and cathode pads of each individual rectifying channel are arranged adjacently, the diode chips 6 are distributed uniformly on the AMB-AlN ceramic substrate 1 and are soldered directly above the copper pillar 2, ensuring good heat dissipation and sheet resistance characteristics.

Further, as shown in fig. 1, a metal cover plate 4 is covered on the metal ring frame 3 to cover the cavity.

The embodiment also discloses a manufacturing method of the three-dimensional integrated rectifier array, which comprises the following steps:

cleaning the AlN ceramic substrate, and annealing and cleaning the copper sheet; the cleaning, annealing and other treatments are all selected from the common choices in the field, and therefore detailed description is omitted;

punching a through hole on the cleaned AlN ceramic substrate, cleaning again, filling a copper column 2 in the through hole, printing active solder on the surface of the AlN ceramic substrate, and welding the cleaned copper sheet with the AlN ceramic substrate through an active soldering process;

removing impurities or waste materials on the AlN ceramic substrate, in the embodiment, the impurities and the waste materials are mainly removed through a copper corrosive liquid and a solder corrosive liquid, and after the circuit is manufactured, laser scribing is carried out to obtain an AMB-AlN ceramic substrate 1;

heating the AMB-AlN ceramic substrate 1 to soften copper materials, and applying external force to enable the copper-clad depression of the substrate to deform to contact with the copper column 2; specifically, external force can be applied through a compression joint process to enable the copper-clad concave deformation of the substrate to be in contact with the copper cylinder 2, and the step mainly comprises the step of ensuring that the first bonding pads 5 on the upper surface and the lower surface of the copper cylinder 2 are tightly connected;

welding a first bonding pad 5 on the upper surface and the lower surface of the copper column 2, and welding a second bonding pad 8 on the bottom of the AMB-AlN ceramic substrate 1;

manufacturing a diode chip 6 on an anode bonding pad Pn51 positioned on the upper end face of the AMB-AlN ceramic substrate 1, and bonding and interconnecting the diode chip with an adjacent cathode bonding pad Nn52 through an aluminum wire 7;

and welding the AMB-AlN ceramic substrate 1 with the metal ring frame 3, and then sealing the metal ring frame by using a metal cover plate 4 through parallel sealing and welding to realize airtight packaging. The welding method is conventional in the art and therefore will not be described in detail.

Furthermore, the active solder comprises Ti-Ag-Cu and an organic carrier.

The rectifier array in the embodiment has the advantages of small volume, light weight, reconfigurable topology, high reliability, excellent air tightness and air leakage rate of less than 1 multiplied by 10^-8atm·com³sec^-1And the application requirements of space navigation, satellite borne and the like can be met.

The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.

The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.