阅读说明：本技术 具有介电层的用于嵌入部件承载件中的部件 (Component with dielectric layer for embedding in a component carrier ) 是由 杰拉尔德·魏丁格尔 安德里亚斯·兹鲁克 于 2019-09-10 设计创作，主要内容包括：提供了部件承载件(100)和制造部件承载件的方法。该部件承载件包括：堆叠体(104),该堆叠体包括至少一个电绝缘层结构(106)和/或至少一个导电层结构(108)；部件(102),该部件在该部件(102)的至少一个主表面上具有一个或多个焊垫(110)和至少一个介电层(112),其中,该至少一个介电层(112)在横向方向上没有延伸超出上述主表面,其中,介电层(112)至少部分地覆盖部件(102)的一个或多个焊垫(110)；以及至少一个导电接触部(114),该至少一个导电接触部延伸通过介电层(112)中的至少一个开口(116)直至一个或多个焊垫(110)中的至少一个焊垫。(A component carrier (100) and a method of manufacturing a component carrier are provided. The component carrier includes: a stack (104) comprising at least one electrically insulating layer structure (106) and/or at least one electrically conductive layer structure (108); a component (102) having one or more pads (110) and at least one dielectric layer (112) on at least one main surface of the component (102), wherein the at least one dielectric layer (112) does not extend beyond the main surface in a lateral direction, wherein the dielectric layer (112) at least partially covers the one or more pads (110) of the component (102); and at least one conductive contact (114) extending through at least one opening (116) in the dielectric layer (112) to at least one of the one or more pads (110).)

1. A component carrier (100), comprising:

a stack (104) comprising at least one electrically insulating layer structure (106) and/or at least one electrically conductive layer structure (108);

a component (102) having one or more pads (110) and at least one dielectric layer (112) on at least one main surface of the component (102), wherein the at least one dielectric layer (112) does not extend beyond the main surface in a lateral direction, wherein the dielectric layer (112) at least partially covers the one or more pads (110) of the component (102); and

at least one conductive contact (114) extending through at least one opening (116) in the dielectric layer (112) to at least one of the one or more pads (110).

2. The component carrier (100) according to claim 1, comprising at least one of the following features:

wherein a bottom surface of the dielectric layer (112) is at the same vertical level and aligned with a bottom surface of the stack (104);

wherein the dielectric layer (112) comprises at least one of the group consisting of: resins, in particular epoxy resins; a photosensitive dielectric; and a polyimide;

wherein the dielectric layer (112) is made of a material that can be plated with copper;

wherein the dielectric layer (112) is made of a thermally conductive material, in particular having a thermal conductivity value of at least 1W/mK;

wherein the dielectric layer (112) is made of a laser-drillable material;

wherein the thickness of the dielectric layer (112) is in the range between 0.5 μm and 100 μm, in particular in the range between 10 μm and 20 μm;

wherein the at least one conductive contact (114) comprises at least one of the group consisting of: a via, in particular at least one of a laser via, a photo-induced via and a plasma via, the via being at least partially filled with an electrically conductive material; and metal pillars, particularly copper pillars;

wherein the component (102) has one or more pads (110) underlying a respective dielectric layer (112) on each of two opposing major surfaces of the component (102), wherein each respective dielectric layer (112) at least partially covers the respective one or more pads (110) on the respective major surface of the component (102).

3. The component carrier (100) according to any of claims 1 to 2, comprising at least one of the following features:

the at least one conductive layer structure (108) comprises at least one of the group consisting of: copper, aluminum, nickel, silver, gold, palladium and tungsten, any of the mentioned materials optionally coated with a superconducting material such as graphene;

the at least one electrically insulating layer structure (106) comprises at least one of the group consisting of: resins, in particular reinforced or non-reinforced resins, such as epoxy resins or bismaleimide-triazine resins, FR-4, FR-5; a cyanate ester; a polyphenylene derivative; glass; a prepreg material; a polyimide; a polyamide; a liquid crystalline polymer; an epoxy-based laminate film; polytetrafluoroethylene; ceramics and metal oxides;

wherein the component (102) is selected from the group consisting of: an electronic component; a non-conductive and/or conductive inlay; a heat transfer unit; an energy harvesting unit; an active electronic component; a passive electronic component; an electronic chip; a storage device; a filter; an integrated circuit; a signal processing section; a power management component; an opto-electrical interface element; a voltage converter; a password component; a transmitter and/or a receiver; an electromechanical transducer; an actuator; a micro-electro-mechanical system; a microprocessor; a capacitor; a resistor; an inductance; an accumulator; a switch; a camera; an antenna; a magnetic element; a light guide member; a further component carrier and a logic chip;

the component carrier (100) is shaped in the form of a plate;

the component carrier (100) is configured as a printed circuit board or a substrate.

4. A method of manufacturing a component carrier (100), wherein the method comprises:

forming a stack (104) comprising at least one electrically conductive layer structure (108) and/or at least one electrically insulating layer structure (106);

embedding a component (102) in the stack (104), wherein the component (102) comprises at least one dielectric layer (112) arranged on at least one main surface of the component (102) and at least partially covering one or more pads (110) of the component (102);

forming at least one opening (116) in the dielectric layer (112) and at least partially filling the at least one opening (116) with at least one conductive contact (114) to electrically connect at least one of the one or more pads (110) of the component (102).

5. The method of claim 4, comprising at least one of the following features:

wherein the method comprises the following steps: forming the at least one electrically conductive contact (114) without previously connecting at least one further electrically insulating layer structure (106) with the at least one dielectric layer (112);

wherein the component (102) has been provided with the at least one opening (116) at the moment of embedding the component (102), wherein the method particularly comprises at least partially filling the at least one opening (116) with an electrically conductive material after embedding the component (102);

wherein the method comprises the following steps: the at least one opening (116) is formed by laser machining, in particular by laser drilling.

6. The method according to any one of claims 4 to 5, wherein the method comprises:

-providing a cavity (118) to the stack (104);

closing at least a portion of the bottom of the cavity (118) with a temporary carrier (120);

-placing the component (102) in the cavity (118) such that at least one of the at least one dielectric layer (112) is attached to the temporary carrier (120).

7. The method of claim 6, wherein the method comprises:

at least partially filling a gap (122) in the cavity (118) between the component (102) and the stack (104) with a filling medium (161), in particular with an additional filling medium (161);

thereafter, the temporary carrier (120) is removed from the stack (104), the component (102) and the filling medium (161).

8. The method of claim 7, wherein the filling of the gap (122) is performed by at least one of the group consisting of: applying a liquid filling medium (161) into the gap (122); and laminating an at least partially uncured electrically insulating layer structure (164) to the stack (104) and the component (102).

9. The method according to any one of claims 4 to 8, wherein the method comprises:

-placing the bottom of the component (102) on a flat support structure, in particular on at least one of the layer structures (106, 108) of the stack (104) or on a temporary carrier (120);

embedding the component (102) between the planar support structure and at least one of the layer structures (106, 108) covering the top of the component (102).

10. The method of claim 9, wherein the embedding comprises: pressing the component (102) into at least one of the layer structures (106, 108) during the embedding.

11. The method according to any one of claims 4 to 10, comprising at least one of the following features:

wherein the at least one dielectric layer (112) has been in a fully cured state prior to inserting the component (102) with the at least one dielectric layer (112) into the stack (104);

wherein the at least one dielectric layer (112) is in an at least partially uncured state upon insertion of the component (102) with the at least one dielectric layer (112) into the stack (104).

12. The method according to any one of claims 4 to 11, wherein the method comprises: inserting the component (102) into the stack (104) with the at least one dielectric layer (112) being a continuous layer.

13. The method of claim 12, wherein the method comprises: after the inserting, the at least one opening (116) and the at least one conductive contact (114) are formed.

14. The method according to any one of claims 4 to 13, wherein the method comprises: at least one further electrically insulating layer structure (106) and/or at least one further electrically conductive layer structure (108) is connected to at least one of the top side and the bottom side of the stack (104).

15. The method according to any one of claims 4 to 14, wherein the method comprises:

providing the dielectric layer (112) with an electrically insulating matrix and an additive comprising a metal compound;

-selectively treating surface portions of the dielectric layer (112) so as to locally remove material of the electrically insulating matrix while locally activating the additive for facilitating subsequent metal deposition;

selectively depositing a metallic material on the locally activated additive.

Technical Field

The present invention relates to a method of manufacturing a component carrier, and to a component carrier.

Background

In the case of an increased product functionality of component carriers equipped with one or more electronic components, an increased degree of miniaturization of such components and an increased number of components to be mounted on or embedded in component carriers such as printed circuit boards, more and more powerful array-like components or packages with several components are increasingly being used, which have a plurality of contacts or connecting means, wherein the spacing between the contacts is increasingly smaller. Removal of heat generated by such components and component carriers themselves during operation is becoming an issue. At the same time, the component carrier should have mechanical robustness and electrical reliability in order to be able to operate even under severe conditions.

In particular, it is a problem to efficiently embed components in component carriers.

It may be desirable to efficiently embed components in component carriers.

Disclosure of Invention

According to an exemplary embodiment of the invention, there is provided a component carrier comprising: a stack comprising at least one electrically insulating layer structure and/or at least one electrically conductive layer structure; a component (or components) having one or more pads and at least one dielectric layer on at least one major surface of the component, wherein the at least one dielectric layer does not extend beyond the major surface in a lateral direction, wherein the dielectric layer at least partially covers the one or more pads of the component; and at least one conductive contact extending through the at least one opening in the dielectric layer to at least one of the one or more pads.

According to another exemplary embodiment of the invention, a method of manufacturing a component carrier is provided, wherein the method comprises: forming a stack comprising at least one electrically conductive layer structure and/or at least one electrically insulating layer structure; embedding a component in the stack, wherein the component comprises at least one dielectric layer arranged on at least one main surface of the component and at least partially covering one or more pads of the component; and forming at least one opening in the dielectric layer and at least partially filling the at least one opening with at least one conductive contact to electrically connect at least one of the one or more pads of the component.

In the context of the present application, the term "component carrier" may particularly denote any support structure capable of accommodating one or more components thereon and/or therein for providing mechanical support and/or electrical connection. In other words, the component carrier may be configured as a mechanical and/or electronic carrier for the component. In particular, the component carrier may be one of a printed circuit board, an organic interposer, and an IC (integrated circuit) substrate. The component carrier may also be a hybrid board combining different ones of the above-mentioned types of component carriers.

In the context of the present application, the term "dielectric layer" may particularly denote at least a portion of a surface of a cover part and comprises an electrically insulating material or even a layer consisting of an electrically insulating material. Such a dielectric layer may be applied to the component as a coating or an attachment film, and may cover a part of or even all of the pads of the component, by means of which one or more pads the component may be electrically contacted. The dielectric layer may be a flat foil covering one or both of the opposite major surfaces of the component. The sidewalls of the features may or may not be covered by a dielectric layer. The dielectric layer may also be a closed casing which completely covers the component in the circumferential direction.

In the context of the present application, the term "dielectric layer which does not extend beyond the main surface of the component in the lateral direction" may particularly denote that the dielectric layer only covers the surface of the component and does not extend significantly beyond the lateral ends of the component. Although the dielectric layer may optionally also cover a side wall of the component which is connected to the main surface at an angle, in particular at a right angle, the dielectric layer of such an embodiment should not protrude significantly beyond such a side wall in the lateral direction, in particular by a dimension which is larger than the thickness of the dielectric layer.

According to an exemplary embodiment of the invention, a component carrier is provided having a component with one or more solder pads covered with a dielectric layer on a surface of the component, which dielectric layer has been formed on the component before embedding the component in a layer stack of the component carrier. By taking this measure, the component may already be ready for a suitable electrical contact before the embedding procedure, so that after embedding the component in the (preferably laminated) layer stack of the electrically conductive layer structure and/or the electrically insulating layer structure, it is not necessary to cover the resulting body with a further electrically insulating layer structure in a separate lamination process before exposing one or more pads of the component for contacting. By correspondingly configuring the dielectric layers (in particular by correspondingly adjusting the material and/or its thickness), the number of lamination processes for producing the component carrier can thus be kept low. At the same time, the overall thickness of the component carrier can also be kept very compact. In addition, by correspondingly designing the mentioned dielectric layers, the embedding height of the component can be adjusted precisely. Thus, the simple manufacturability of the component carrier can be combined with its thin and compact shape.

Further exemplary embodiments of the method and the component carrier will be explained below.

In an embodiment, the bottom surface of the dielectric layer is at the same vertical level and aligned with the bottom surface of the stack. In particular, when a component is located in a cavity of the stack, its dielectric layer may be located entirely within the cavity such that its bottom surface is flush with the bottom surface of the stack. This provides a particularly compact architecture in the vertical direction.

In an embodiment, the dielectric layer comprises at least one of the group consisting of: resins, in particular epoxy resins; a photosensitive dielectric; and a polyimide. The use of resins, in particular epoxy resins, as material for the dielectric layer makes the coated or covered component particularly suitable for component carrier technology, in particular PCB (printed circuit board) technology. The reason for this is that in PCB technology such resin materials are also used, so that problems such as thermal mismatch in different coefficient of thermal expansion values of the dielectric materials of the component carrier, the dielectric material bridge, etc. can be safely prevented. Further, such component carrier materials may be suitably processed by laser drilling, mechanical drilling, or the like, and are compatible with copper filling. In the case where a photosensitive dielectric, such as photoresist, is used as the material for the dielectric layer, the dielectric layer may be patterned by a photoimaging process. This simplifies the process of exposing at least partially covered pads of the component for establishing electrical contact with the environment. In case the dielectric layer is made of a photosensitive material, it may for example comprise or consist of a photoresist. In addition, the use of polyimide as the material for the dielectric layer is also advantageous, since this material can also be suitably processed by laser drilling or mechanical drilling and is compatible with copper plating techniques.

In an embodiment, the dielectric layer is made of a material that is capable of being plated with copper. Thus, the dielectric layer can serve as a support for plated copper deposited on the dielectric layer and/or in one or more openings extending through the dielectric layer.

In an embodiment, the dielectric layer is made of a thermally conductive material, in particular having a thermal conductivity value of at least 1W/mK. In the case of a material of the dielectric layer made of a highly thermally conductive material (in particular having a higher thermal conductivity than the prepreg), the dielectric layer can also contribute significantly to the removal of heat generated by the components inside the component carrier during operation. For example, in the case where the component is a semiconductor chip such as a processor, a considerable amount of heat may be generated inside the component carrier and needs to be removed therefrom in order to prevent undesirable effects such as overheating or thermal loading. Such heat removal or heat diffusion in the plate-shaped component carrier may be facilitated by a dielectric layer made of a suitably heat-conducting material.

In an embodiment, the dielectric layer is made of a material that is capable of laser drilling. In case the dielectric layer is made of a material that can be drilled by laser, the opening can be easily and accurately manufactured by laser drilling. This further improves the compatibility of the components coated or covered with the dielectric layer with PCB technology.

In an embodiment, the thickness of the dielectric layer is in a range between 0.5 μm and 100 μm, in particular in a range between 10 μm and 20 μm. On the one hand, the dielectric layer should not be too thin in order to prevent undesired uncoated regions of the component, which could possibly deteriorate the electrical properties of the component carrier. On the other hand, the dielectric layer should not be too thick in order to keep the manufactured component carrier thin in the vertical direction. The ranges mentioned were found to be a suitable trade-off between these and other considerations.

In an embodiment, the at least one conductive contact comprises at least one of the group consisting of: a via at least partially filled with a conductive material, in particular at least one of a laser via, a photo via (photo sensitive via) and a plasma via; and metal pillars, particularly copper pillars. Thus, external electrical coupling of the embedded component can be achieved by vias (particularly laser vias) formed and extending vertically through the dielectric layer. Additionally or alternatively, metal posts, i.e. metal posts, for contacting pads of components, extending through the dielectric layer may also be used.

In an embodiment, the component has one or more pads on each of two opposing major surfaces of the component underlying a respective dielectric layer, wherein each respective dielectric layer at least partially overlies a respective one or more pads on a respective major surface of the component. In such embodiments, both opposing major surfaces of the component may be covered with respective dielectric layers, and may have pads on both opposing major surfaces. This makes possible even complex contact architectures. It is also possible that the entire circumferential surface of the component is covered by the dielectric material, for example by immersing the entire component in a liquid precursor for such a dielectric material. Alternatively, only the two opposite main surfaces mentioned may be partially or completely covered with respective dielectric layers, for example by adhering an adhesive foil as a dielectric layer to the main surfaces. In a further embodiment, only one main surface of the component may be covered with the mentioned dielectric layer in order to keep the thickness of the component as thin as possible.

In an embodiment, the method comprises: the at least one electrically conductive contact is formed without previously connecting the at least one further electrically insulating layer structure with the at least one dielectric layer. Thus, it may not be necessary to attach one or more further electrically insulating layer structures to the bottom surface of both the stack and the embedded component before exposing the solder pads of the component with respect to the external electronic environment of the laminate type component carrier. This makes the manufacturing process fast and simple and allows to obtain a component carrier with a very small vertical thickness.

In an embodiment, the component is already provided with at least one opening at the moment of embedding the component. Thus, at the moment of embedding the component into the stack, the component with one or more dielectric layers may already be provided with one or more openings exposing the pads. Thus, it may not be necessary to then open or expose the pads of the component by forming openings that extend through the dielectric layer. These access holes or openings can be easily formed when adjusting the parts that are still to be isolated or separated.

In an embodiment, the method comprises: at least one opening is at least partially filled with a conductive material after embedding the component. Such a filling procedure may be accomplished, for example, by plating, particularly copper plating.

In an embodiment, the method comprises: the at least one opening is formed by laser machining, in particular by laser drilling. Laser drilling is a process that allows openings to be formed with high precision in a short time.

In an embodiment, the method comprises: providing a cavity to the stack, closing at least a part of the bottom of the cavity with a temporary carrier, and placing the component in the cavity such that at least one of the at least one dielectric layer is attached to the temporary carrier. In such an embodiment, the cavity may be a through hole extending through the entire stack (e.g., a fully cured core). To temporarily fix the component in such a cavity, an adhesive tape (with or without holes) may be attached to the lower main surface of the stack in order to partially or even completely close the cavity. Thereafter, the component may be attached to the temporary carrier.

In an embodiment, the method comprises: the gap in the cavity between the component and the stack is at least partially filled with additional filling medium, and thereafter the temporary carrier is removed from the stack, the component and the filling medium. Such a filling medium may be a material that secures the component in place in the cavity. After application and curing of such a filling medium, the layer stack hardens and the temporary carrier for defining the position of the component in the cavity is no longer required and can be removed. For example, an adhesive tape (e.g., for a temporary carrier) may be delaminated or peeled from the remainder of the currently manufactured component carrier.

In an embodiment, the filling of the gap is performed by at least one of the group consisting of: applying a liquid filling medium into the gap; and laminating the at least partially uncured electrically insulating layer structure to the stack and the component. The filling medium can thus be, for example, a liquid medium which is applied by a dispensing device or the like after the component has been placed on the temporary carrier. For example, such an adhesive may be an epoxy-based adhesive. Alternatively, an electrically insulating layer structure (e.g. a prepreg layer) which has been at least partially uncured beforehand may be laminated on both the stack and the component. During such a lamination process, i.e. during the application of heat and/or pressure, the dielectric material of the electrically insulating layer structure, which was at least partially uncured beforehand, may melt or may become liquid and may also flow in the gap between the component and the stack. During this lamination, the electrically insulating layer structure, which has previously been at least partially uncured, may be cured by crosslinking of its resin material. The cross-linked and cured material will then resolidify, and the components may then be secured in place in the cavities of the stack. The dielectric layer itself may also be made of an at least partially uncured material that can be cured during lamination in order to flow in and fill the gap while facilitating adhesion between the constituent parts of the component carrier.

In an embodiment, the method comprises: the embedding is performed by placing the component between a flat support structure, in particular at least one of the layer structures or the temporary carrier of the stack, and at least one flat layer structure of the layer structures. In such an embodiment, the cavity need not be formed prior to embedding the component into the stack. In contrast, the present embodiment uses a planar layer structure with components embedded therebetween by lamination without the need for previously forming through-holes or blind-holes. In such an embodiment, no core is required, i.e. the material has been fully cured, which may correspond to a coreless configuration.

Still referring to the previously described embodiments, embedding may comprise pressing the component into at least one of the layer structures and/or into the support structure. In the case where the electrical insulation layer structure mentioned at the moment of pressing the component into the planar electrical insulation layer structure (e.g. prepreg layer) above and/or below the component has not yet been completely cured, the component can be pressed into these layers during lamination. By the described embodiment of embedding the component by pressing it between two flat structures, it is not necessary to form a cavity in the embedding.

In an embodiment, the at least one dielectric layer is already in a fully cured state before the component is inserted into the stack. In case the dielectric layer has cured at the moment of embedding (e.g. of FR4 material), it can be safely ensured that the dielectric layer remains in place during the manufacturing process and does not flow into the surrounding gap. This ensures a high spatial accuracy of the position of the component within the stack.

In another embodiment, at least one of the dielectric layers is in an at least partially uncured state upon insertion of the component into the stack. In such alternative embodiments, the material of the dielectric layer may be cured by lamination, i.e. applying heat and/or pressure, and may thus contribute to the internal or intrinsic adhesion between the constituent parts of the component carrier. In such an embodiment, the pads of the component may still be completely covered by the dielectric material when embedding the component in the stack.

In an embodiment, the method comprises: the component is inserted into the stack in a state where at least one of the dielectric layers is a continuous layer. Then, after the embedding procedure, one or more openings may be formed extending through the dielectric layer up to the pads.

Still referring to the previously described embodiments, the method comprises: after insertion, at least one opening and at least one conductive contact are formed. This allows the dielectric layer to properly protect the contact surfaces of the components during the embedding procedure and to expose the contact surfaces only after embedding.

In an embodiment, at least partially filling the at least one opening with at least one conductive contact element comprises attaching a further conductive layer structure (such as a copper foil) to the bottom of the stack and to at least one of the at least one dielectric layer, and at least partially plating (e.g. electroplating) the at least one opening with a conductive material.

In an embodiment, the method comprises: providing the dielectric layer with an electrically insulating matrix (in particular a polymer removable by means of a laser beam) and an additive comprising a metal compound (in particular a metal compound activatable by means of a laser beam); selectively treating a surface portion of the dielectric layer (in particular by irradiation with a laser beam along a predetermined trajectory) so as to locally remove material of the electrically insulating matrix while locally activating the additive for facilitating a subsequent metal deposition; and selectively depositing a metallic material on the locally activated additive. The dielectric layer on the component can be treated, illustratively, by a laser beam, such that the surface of the dielectric layer is activated by the laser only in the laser-treated areas. The subsequent deposition of metallic material, in particular copper, occurs predominantly or even completely selectively only on the laser-activated additive, since the metal compound forms a seed for this metallization. For example, such metallization may be carried out in an currentless manner (e.g. in a copper bath or the like). In the case of additive electrical insulation of the metal compound, the produced metallization may form an electrically conductive track on the component carrier.

In an embodiment, the method comprises: at least one further electrically insulating layer structure and/or at least one further electrically conductive layer structure is connected to at least one of the top side and the low side of the stack. Thus, after the embedding procedure, additional build-up layers may be implemented depending on the desired application of the component carrier under manufacture. The connection of the at least one further layer structure mentioned to one or both of the two opposite main surfaces of the stack with the embedded components can be carried out symmetrically or asymmetrically.

The material of the dielectric layer may also be functionalized. In other words, the materials may be selected such that the dielectric layer performs at least one additional function. Such functions may be, for example, high frequency capabilities, heat removal characteristics, etc.

The at least one component may be selected from the group consisting of: a non-conductive inlay, a conductive inlay (such as a metal inlay, preferably comprising copper or aluminum), a heat transfer unit (e.g., a heat pipe), a light guide element (e.g., a light guide or light pipe connection), an electronic component, or a combination thereof. For example, the component may be an active electronic component, a passive electronic component, an electronic chip, a storage device (e.g. a DRAM or another data storage), a filter, an integrated circuit, a signal processing component, a power management component, an optoelectronic interface element, a voltage converter (e.g. a DC/DC converter or an AC/DC converter), a cryptographic component, a transmitter and/or receiver, an electromechanical transducer, a sensor, an actuator, a micro-electromechanical system (MEMS), a microprocessor, a capacitor, a resistor, an inductance, a battery, a switch, a camera, an antenna, a logic chip, a light guide and an energy harvesting unit. However, other components may be embedded in the component carrier. For example, a magnetic element may be used as the component. Such a magnetic element may be a permanent magnetic element (such as a ferromagnetic element, an antiferromagnetic element, or a ferrite magnetic element such as a ferrite-based structure) or may be a paramagnetic element. However, the component may also be another component carrier, for example in a plate-in-plate configuration. One or more components may be surface mounted on the component carrier and/or embedded within it. Further, components other than the mentioned components may also be used as the components.

In an embodiment, the component carrier comprises a stack of at least one electrically insulating layer structure and at least one electrically conductive layer structure. For example, the component carrier may be a laminate of the mentioned electrically insulating layer structure and electrically conductive layer structure, in particular by applying mechanical pressure, if desired supported by thermal energy. The mentioned stack may provide a plate-like component carrier which is capable of providing a large mounting surface for further components and which is still very thin and compact. The term "layer structure" may particularly denote a continuous layer, a patterned layer or a plurality of discontinuous islands in a common plane.

In an embodiment, the component carrier is shaped in the form of a plate. This contributes to a compact design, wherein the component carrier still provides a large basis for mounting components thereon. Further, in particular, a bare chip as an example of an embedded electronic component can be easily embedded in a thin plate such as a printed circuit board owing to its small thickness.

In an embodiment, the component carrier is configured as one of the group consisting of a printed circuit board and a substrate (in particular an IC substrate).

In the context of the present application, the term "printed circuit board" (PCB) may particularly denote a component carrier formed by laminating several electrically conductive layer structures with several electrically insulating layer structures, which may be plate-shaped (i.e. planar), three-dimensionally curvilinear (e.g. when manufactured using 3D printing), or which may have any other shape, for example by applying pressure, if desired with the supply of thermal energy. As a preferred material for PCB technology, the electrically conductive layer structure is made of copper, while the electrically insulating layer structure may comprise resin and/or glass fibres, so-called prepreg or FR4 material. The individual conductive layer structures can be connected to one another in a desired manner, for example by forming a through-hole through the laminate by laser drilling or mechanical drilling, and by filling this through-hole with a conductive material, in particular copper, so as to form a via as a through-hole connection. In addition to one or more components that may be embedded in a printed circuit board, printed circuit boards are typically configured to receive one or more components on one or both opposing surfaces of a plate-like printed circuit board. They may be attached to the respective major surfaces by welding. The dielectric portion of the PCB may be composed of a resin with reinforcing fibers, such as glass fibers.

In the context of the present application, the term "substrate" may particularly denote a small component carrier having substantially the same size as the component (particularly the electronic component) to be mounted thereon. More specifically, a substrate may be understood as a carrier for electrical connections or electrical networks and a component carrier comparable to a Printed Circuit Board (PCB) but with a substantially high density of laterally and/or vertically arranged connections. The transverse connections are, for example, conductive paths, while the vertical connections may be, for example, boreholes. These lateral and/or vertical connections are arranged within the substrate and may be used to provide electrical and/or mechanical connection of a received or non-received component (such as a bare wafer), in particular an IC chip, to a printed circuit board or an intermediate printed circuit board. Thus, the term "substrate" also includes "IC substrates". The dielectric portion of the substrate may be composed of a resin with reinforcing spheres, such as glass spheres.

In an embodiment, the at least one electrically insulating layer structure comprises at least one of the group consisting of: resins (such as reinforcing or non-reinforcing resins, for example epoxy resins or bismaleimide triazine resins, more particularly FR-4 or FR-5); a cyanate ester; a polyphenylene derivative; glass (especially fiberglass, multiple layer glass, glassy materials); a prepreg material; a polyimide; a polyamide; liquid Crystal Polymers (LCP); an epoxy-based laminate film; polytetrafluoroethylene (teflon); ceramics and metal oxides. Reinforcing materials such as meshes, fibers or spheres, for example made of glass (multiple layer glass), may also be used. While prepreg or FR4 is generally preferred, other materials may be used. For high frequency applications, high frequency materials such as polytetrafluoroethylene, liquid crystal polymers and/or cyanate ester resins may be implemented as electrically insulating layer structures in the component carrier.

In an embodiment, the at least one electrically conductive layer structure comprises at least one of the group consisting of copper, aluminum, nickel, silver, gold, palladium and tungsten. Although copper is generally preferred, other materials or coated versions thereof are possible, particularly coated with superconducting materials such as graphene.

In an embodiment, the component carrier is a laminate. In this embodiment, the semi-finished product or component carrier is a composite of a multilayer structure which is stacked and joined together by applying a compressive force, if desired with heat.

The aspects defined above and further aspects of the invention are apparent from the examples of embodiment to be described hereinafter and are explained with reference to these examples of embodiment.

Drawings

Fig. 1 to 5 show sectional views of structures obtained during implementation of a method of manufacturing a component carrier with embedded components as shown in fig. 5 according to an exemplary embodiment of the invention.

Fig. 6 shows a sectional view of a component carrier according to another exemplary embodiment of the present invention.

Fig. 7 to 12 show sectional views of structures which result during the implementation of a method of manufacturing a component carrier with embedded components as shown in fig. 12 according to a further exemplary embodiment of the invention.

Fig. 13 to 19 show sectional views of structures obtained during implementation of a method of manufacturing a component carrier with embedded components according to an exemplary embodiment of the invention.

Fig. 20 to 24 show sectional views of structures which result during the implementation of a method of manufacturing a component carrier with an embedded component according to a further exemplary embodiment of the invention.

Fig. 25 to 29 show sectional views of structures obtained during implementation of a method of manufacturing a component carrier with embedded components according to a further exemplary embodiment of the present invention.

Fig. 30 to 35 show sectional views of structures obtained during implementation of a method of manufacturing a component carrier with embedded components according to another exemplary embodiment of the invention.

Fig. 36 to 42 show cross-sectional views of structures obtained during implementation of a method of manufacturing a component carrier with embedded components according to further exemplary embodiments of the present invention.

Fig. 43 to 45 show sectional views of structures obtained during implementation of a method of manufacturing a component carrier with embedded components according to a further exemplary embodiment of the invention.

Fig. 46 and 47 show plan views of structures obtained during implementation of a method of manufacturing a component carrier with embedded components according to an exemplary embodiment of the invention.

The illustration in the drawings is schematically. In different drawings, similar or identical elements are provided with the same reference signs.

Detailed Description

Before describing exemplary embodiments in more detail with reference to the drawings, some basic considerations based on which exemplary embodiments of the present invention are developed will be summarized.

According to an exemplary embodiment of the present invention, an embedded architecture using dielectrically coated or covered components is provided.

The lamination process can be omitted in the temporary carrier-based buildup by using the following components: i.e. the component having the dielectric layer at the moment of being embedded in the component carrier stack. This may allow a component carrier which may be manufactured simply and thin.

In one embodiment, the following method of manufacturing a component carrier may be implemented:

first, a stack comprising at least one electrically insulating layer structure and/or at least one electrically conductive layer structure (e.g. a core), which has been provided with cavities in the form of through holes or the like, may be laminated with a temporary carrier. Thereafter, components with a dielectric layer can be placed in these through holes and on the temporary support, in particular if the dielectric layer is directly connected to the temporary support. The component may be adhered to the stack by filling a suitable adhesive or resin in the gap between the stack and the component carrier. Thereafter, the temporary carrier may be removed. The surface may be metallized, for example, by performing a metal deposition procedure (e.g., an electroless copper deposition procedure followed by an electrolytic copper deposition procedure). Additionally or alternatively, lamination may be performed, for example using prepreg foil, copper foil and/or RCC (resin coated copper) foil. Thereafter, patterning, contacting and further component carrier manufacturing procedures may be performed.

In another embodiment, the following method may be implemented: after forming the through-holes or the like extending through the stack as cavities, a stack of at least one electrically insulating layer structure and/or at least one electrically conductive layer structure (such as a fully cured core) may be laminated on the temporary carrier. The component with the dielectric layer may be placed with the dielectric layer facing the temporary carrier at the bottom. Lamination with at least one further layer structure (e.g. a prepreg sheet, a resin sheet with copper foil or RCC foil) may be performed. Thereafter, the temporary carrier may be removed. For example, the uppermost copper layer may be removed, for example by etching. Thereafter, the major surface may be metallized using a metal deposition procedure (e.g., an electroless copper deposition procedure followed by an electrolytic copper deposition procedure). Then, patterning, contact formation and continuation of the component carrier manufacturing procedure may be carried out.

It should be mentioned that by providing the component with a dielectric layer on one of its two opposite main surfaces, the pads of the component can be directly contacted after embedding without having to carry out a further dielectric lamination procedure in advance. This allows a particularly thin component carrier to be obtained. In embodiments, a specific coating may be used (e.g. using a palladium complex) and the stack (e.g. core) may be roughened prior to metallization (e.g. by a plasma process).

The above embodiments refer to embedding a component with a dielectric layer using cavities formed in a stack. However, other exemplary embodiments of the present invention may embed a component having a dielectric layer without using a cavity. In these embodiments, one or more of the following materials may be used in particular: resin sheets, asymmetric prepregs, RCC (resin coated copper) materials, Sumitomo (Sumitomo) materials, TD002 prepregs, coatings (i.e. liquid resin compounds), mold materials (e.g. based on resin mixtures), etc. In an embedding procedure without cavities in the stack, a component with one or more dielectric layers may be pressed into an adjacent material (e.g. a planar layer of material) during lamination. To contact the embedded component, copper-filled laser vias, copper-filled plasma vias, and/or copper pillars, for example, may be formed.

In yet another exemplary embodiment, pre-patterned features may be embedded. In such an embodiment, the component with the dielectric layer may be embedded after patterning the dielectric layer. Such patterning may be performed, for example, by an optical or plasma process that forms one or more openings in the dielectric layer for exposing pads of the component. The contact may be made by laser drilling followed by a copper fill procedure.

In yet another exemplary embodiment of the present invention, a photo-via embedded component may be used. In such an embodiment, a photosensitive dielectric layer (e.g., made of photoresist) in which vias exposing the pads of the component can be formed by imaging and lift-off, for example, can be employed. The via fill may be performed during a subsequent copper procedure.

In yet another exemplary embodiment of the present invention, embedding of the component may be accomplished using a plasma via. The vias for exposing the pads of the component may be formed by applying a mask and then by a plasma etching procedure. The filling of the vias may be performed during the copper process.

In yet another exemplary embodiment of the present invention, the embedding of the component may be accomplished using copper pillars that extend through openings in the dielectric layer. A via for contacting a pad of a component may be realized by forming a dielectric layer on the component already provided with a copper pillar.

In yet another exemplary embodiment of the present invention, embedding of the component may be accomplished using a laser-patternable dielectric layer. For such an embodiment, the component may be provided with a polymeric dielectric layer doped with a (preferably non-conductive) laser-activatable metal compound as an additive to the polymer. At the location where the laser beam impinges on such a plastic, the plastic matrix can decompose in the surface region into volatile reaction products. At the same time, the metal seat portion can be separated from the additive present in the micro-rough surface. These metal particles form seeds for subsequent metallization. The laser-machined portion of the surface may be used to form a conductive trace in an electroless copper bath. The corresponding patterning procedure may be implemented as a laser direct patterning process.

In yet another embodiment of the present invention, a thermally conductive coating may be used as the material for the dielectric layer. The dielectric layer is provided with highly thermally conductive particles such as AlN, Al₂O₃BN or made therefrom, the heat removal properties of the component can be improved.

In an embodiment, the dielectric layer covering at least a portion of the surface of the component may be formed using a B-stage configuration material. In other words, the dielectric material of the dielectric layer may still be in an at least partially uncured state, for example may be provided as an epoxy resin that has not yet been fully crosslinked. The dielectric layer may then contribute to the stack-internal adhesion of the component carrier under manufacture.

Fig. 1 to 5 show cross-sectional views of structures obtained during implementation of a method of manufacturing a component carrier 100 with embedded components 102 as shown in fig. 5 according to an exemplary embodiment of the invention.

Referring to fig. 1, a stack 104 of electrically conductive layer structures 108 and electrically insulating layer structures 106 is shown. In the illustrated embodiment, the stack 104 may be the following core: the core has a fully cured resin (optionally including reinforcing particles such as glass fibers) that constitutes an electrically insulating layer structure 106 that is covered on opposite major surfaces by respective copper foils that constitute respective ones of the electrically conductive layer structures 108. As can be seen from fig. 1, a cavity 118 is formed in the stack 104 as a through hole.

Further, a component 102 (such as a semiconductor chip) is shown to be embedded in a cavity 118 formed in the stack 104. The component 102 includes a dielectric layer 112 covering only the entire lower major surface of the component 102. For example, the thickness "d" of the dielectric layer 112 may be 10 μm. The dielectric layer 112 extends over the entire main surface, but does not extend beyond the main surface in a lateral direction corresponding to the horizontal direction according to fig. 1. Thus, the dielectric layer 112 also covers the pads 110 formed on the lower major surface of the component 102. The dielectric layer 112 may already be in a fully cured state prior to inserting the component 102 into the stack 104. For example, the dielectric layer 112 may be made of a fully cured resin (such as an epoxy resin) that optionally includes reinforcing particles, such as glass fibers. In such embodiments, the material of the dielectric layer 112 is prevented from flowing away during the lamination procedure, which ensures that the component 102 is held accurately in place during lamination. Alternatively, the dielectric layer 112 may be in an at least partially uncured state when the component 102 is inserted into the stack 104. In such embodiments, the material of the dielectric layer 112 may facilitate adhesion of the constituent parts of the component carrier 100.

Furthermore, a temporary carrier 120 (here embodied as an adhesive tape) is shown, which is attached to the lower main surface of the stack 104 so as to close the entire bottom of the cavity 118.

As can be seen from the arrow 160 in fig. 1, the component 102 having the dielectric layer 112 on the bottom surface is placed in the cavity 118.

Referring to fig. 2, the component 102 is now placed in the cavity 118 such that the dielectric layer 112 is attached to the temporary carrier 120. Thus, the component 102 is accommodated in the stack 104 with the dielectric layer 112 being the only continuous layer, but disposed entirely on exactly one major surface of the component 102. As a result, the dielectric layer is attached to the adhesive surface of the temporary carrier 120, e.g. an adhesive tape. As can be seen from fig. 2, the bottom surface of the dielectric layer 112 is at the same vertical level and aligned with the bottom surface of the stack 104.

Referring to fig. 3, the gap 122 in the cavity 118 between the component 102 and the stack 104 is filled with additional fill medium 161. This process of filling the gap 122 may be performed by applying a liquid fill medium into the gap 122 and curing the liquid fill medium. Thus, gap 122 is filled with an adhesive material that cures to secure component 102 in place in cavity 118.

Referring to fig. 4, the temporary carrier 120 is then removed from the stack 104, the embedded components 102 and the cured filling medium 161. The adhesive tape forming the temporary carrier 120 is thus removed by peeling.

Referring to fig. 5, an opening 116 (not shown in fig. 5, but compare, e.g., fig. 23) is formed in dielectric layer 112, e.g., by laser drilling. Subsequently, the openings 116 are filled with a conductive material, thereby forming conductive contacts 114 for connecting the pads 110 of the component 102 with the electronic periphery of the currently formed component carrier 100. Thus, after embedding the component 102, the opening 116 in the dielectric layer 112 is filled with a conductive material. Thus, the dielectric layer 112 is made of a material that is copper-clad and laser-drillable. Advantageously, the electrically conductive contacts 114 may be formed without previously connecting additional electrically insulating layer structures to the dielectric layer 112 and the stack 104.

As can also be seen from fig. 5, respective further electrically conductive layer structures 108 (such as further copper foils) may be attached to both the top and bottom of the stack 104 and the dielectric layer 112 and the component 102, respectively. Thereafter, the opening 116 may be plated with a conductive material, such as copper. Fig. 5 shows the result of the metallization and contact procedure and thus the component carrier 100.

Referring to fig. 6, a component carrier 100 according to another embodiment is shown, wherein the component 102 has a solder pad 110 and a respective dielectric layer 112 on each of two opposing major surfaces of the component 102. Each respective dielectric layer 112 partially overlies a respective pad 110 on a respective major surface of component 102. Thus, fig. 6 shows an alternative component carrier 100 that differs from the embodiment of fig. 5 in that the electrically conductive contacts 114 extending through the openings 116 in the respective dielectric layers 112 are formed on two opposing major surfaces of the component 102.

Optionally, and although not shown in fig. 1 to 6, at least one further electrically insulating layer structure 106 (such as at least one prepreg layer) and/or at least one further electrically conductive layer structure 108 (such as at least one further copper foil) may be laminated to the top side and/or the bottom side of the component carrier 100 shown in fig. 6.

Fig. 7 to 12 show cross-sectional views of structures obtained during implementation of a method of manufacturing a component carrier 100 with embedded components 102 as shown in fig. 12 according to another exemplary embodiment of the invention.

The procedures shown in fig. 7 and 8 correspond to the procedures shown in fig. 1 and 2, respectively.

Referring to fig. 9, an additional electrically insulating layer structure 164 (such as a prepreg sheet) is laminated on the upper major surface of the structure shown in fig. 9. Due to the curing of the resin material of the further electrically insulating layer structure 164, (by applying pressure and/or heat), the material of the further electrically insulating layer structure 164 re-melts and becomes flowable so as to fill the gap 122 until it re-solidifies after the cross-linking process is completed.

According to fig. 10, the temporary carrier 120 is now removed, because the component 102 is now fixed in position due to the resin filling of the gap 122 as a result of the lamination process described with reference to fig. 9.

The structure of fig. 11 is then obtained by a metallization and contact procedure.

The component carrier 100 according to fig. 12 has electrically conductive contacts 166 formed in an upper portion of the component carrier 100. These electrically conductive contacts 166 are formed at laterally adjacent portions of the component 102, i.e., extending through the further electrically insulating layer structure 164 connected by the procedure described above with reference to fig. 9.

Fig. 13 to 19 show cross-sectional views of structures obtained during implementation of a method of manufacturing a component carrier 100 with an embedded component 102 according to further exemplary embodiments of the present invention. Fig. 13 to 19 show structures obtained during manufacturing of the component carrier 100 by an embedding procedure using a copper-clad core portion as the stacked body 104. Securing the component 102 in place may be accomplished by filling the gap 122 of the cavity 118 with a liquid adhesive or by previously laminating an at least partially uncured electrically insulating layer structure.

According to fig. 13, a stack 104 of cores configured with patterned copper layers on both of its opposite surfaces is shown.

As can be seen from fig. 14, a core with a cavity 118 is attached to a temporary carrier 120. The component 102 having the dielectric layer 112 on its lower main surface is placed in the cavity 118 and attached with the adhesive tape forming the temporary support 120 facing downwards (i.e. with the solder pads 110 oriented downwards). According to fig. 14, further build-up is accomplished by laminating further electrically insulating layer structures 164, such as prepreg sheets, and further electrically conductive layer structures 168, e.g. copper foil.

In contrast to this, the further build-up built up according to fig. 15 is implemented by laminating only resin or prepreg sheets as further electrically insulating layer structures 164.

Fig. 16 shows the results of the lamination procedure according to fig. 14, while fig. 17 shows the results of the lamination procedure according to fig. 15.

Fig. 18 shows the component carrier 100 (or a preform thereof) obtained by removing the temporary carrier 120 from the structure shown in fig. 16.

Fig. 19 shows a component carrier 100 (or a preform thereof) according to another exemplary embodiment of the present invention, obtained by removing the temporary carrier 120 from the structure shown in fig. 17.

Fig. 20 to 24 show cross-sectional views of structures obtained during implementation of a method of manufacturing a component carrier 100 with an embedded component 102 according to a further exemplary embodiment of the present invention.

Fig. 20 shows-see reference numeral 170-how liquid adhesive 161 is applied in the gap 122 between the component 102 and the stack 104.

As can be seen from fig. 21, such a liquid adhesive 161 may be applied not only in the gap 122 but also underfilling the void on the lower side of the component 102 and the upper side covering component 102.

Fig. 22 shows the result after curing of the applied liquid adhesive 161. Further, the temporary carrier 120 is also removed from the lower main surface of the laminate shown in fig. 21 at the same time.

As can be seen from the detail shown in fig. 23, laser vias have now been formed in the lower main surface of the illustrated layer structure, wherein these laser vias form a frustoconical opening 116 which extends from the outer main surface of the illustrated structure up to the previously covered pad 110 of the component 102. By taking this measure, the pad 110 is partially exposed.

By filling the openings 116 with an electrically conductive material, such as copper, thereby forming the electrically conductive contacts 114, a component carrier 100 according to the detail shown in fig. 24 may be obtained. This may be accomplished by a plating process.

Fig. 25 to 29 show sectional views of structures obtained during implementation of a method of manufacturing a component carrier 100 with an embedded component 102 according to another exemplary embodiment of the invention.

Referring to fig. 25, at the moment of embedding the component 102, the component 102 has been provided with an opening 116. As shown in fig. 25, the dielectric layer 112 of the component 102 is inserted into the cavity 118 of the stack 104 and attached to the adhesive surface of the temporary carrier 120 closing the cavity 118 at the bottom side. It is envisioned that the dielectric layer 112 on the component 102 has vias or openings 116 that extend up to the pads 110 of the component 102.

Fig. 26 shows the result of the described pick-and-place assembly.

To obtain the structure shown in fig. 27, a further electrically insulating layer structure 164 is laminated to the upper major surface of the structure shown in fig. 26. Therefore, the gap 122 is also filled with a resin material or the like.

The structure shown in fig. 28 may then be obtained by removing the temporary carrier 120. Since the opening 116 is now exposed, the bond pad 110 is exposed to the electronic environment. Thus, the opening 116, which may be a photo-via, may allow access to the component 102 without the need to attach an additional electrically insulating layer structure to the lower major surface of fig. 28.

The component carrier 100 shown in fig. 29 can be obtained by plating a conductive material such as copper on the lower main surface of the structure shown in fig. 28. As a result, the opening 116 is filled with a copper material or the like, thereby forming the conductive contact 114. If desired, the electrically conductive layer structure 108, which forms the upper main surface and the lower main surface, respectively, of the component carrier 100 according to fig. 29, can be patterned.

Fig. 30 to 35 show cross-sectional views of structures obtained during implementation of a method of manufacturing a component carrier 100 with an embedded component 102 according to an exemplary embodiment of the invention. With reference to fig. 30 to 35, a method of manufacturing a component carrier 100 according to a further exemplary embodiment of the present invention based on the use of a component 102 which is not placed in a cavity 118 but is sandwiched between two planar layers will be described below.

Referring to fig. 30, the bottom of the component 102 rests on the flat major surface of the temporary carrier 120. The component 102 is embedded between the top layer structure 106, 108 and the temporary carrier 120 at the bottom. More specifically, the embedding includes: the component 102 is pressed into a layer structure 106 (which may be a resin or a prepreg sheet). As shown in fig. 30, the component 102 to which the dielectric layer 112 has been applied is thus interposed between the temporary carrier 120 on the lower side and the electrically insulating layer structure 106 and the electrically conductive layer structure 108 (such as a copper foil) on the upper side. The electrically insulating layer structure 106 may be an at least partially uncured layer structure, such as a prepreg layer.

In order to obtain the layer structure shown in fig. 31, the components according to fig. 30 can be connected by lamination, in particular by applying pressure and/or heat. Thus, the whole shown in fig. 31 is obtained. During this process, the component 102 having the dielectric layer 112 on its lower main surface is pressed into embedding the electrically insulating layer structure 106.

To obtain the structure shown in fig. 32, the temporary carrier 120 may be removed from the lower main surface of the structure shown in fig. 31.

Fig. 33 shows a detail of the structure shown in fig. 32.

As can be seen from fig. 34, the structure shown in fig. 33 may then be subjected to a patterning procedure, for example by laser machining, for forming an opening 116 extending through the dielectric layer 112 to the bonding pad 110. By taking this measure, the pad 110 of the component 102 is exposed.

To obtain the component carrier 100 according to fig. 35, the lower main surface of the structure shown in fig. 34 is subjected to a metal deposition procedure. Thus, the opening 116 is filled with a metallic material, preferably copper, thereby forming the conductive contact 114. By this plating procedure, the lower main surface of the stack 104 is also covered with the conductive material.

For coreless processing according to fig. 30 to 35, the component 102 may be provided with a vertical thickness "D", see fig. 30, preferably of 10 to 50 μm.

Fig. 36 to 42 show cross-sectional views of structures obtained during implementation of a method of manufacturing a component carrier 100 with an embedded component 102 according to another exemplary embodiment of the invention. With reference to fig. 36 to 42, a method of manufacturing a component carrier 100 according to a further exemplary embodiment of the present invention will be described, wherein a component 102 having a dielectric layer 112 is embedded without the need to form a cavity 118. The manufacturing process may be implemented by implementing photo-induced vias.

Fig. 36, 37, and 38 correspond to the procedures described above with reference to fig. 30, 31, and 32, respectively.

Removing material from the upper major surface of the structure shown in fig. 38 allows for a component carrier 100 as shown in fig. 39.

Fig. 40 shows a detailed view of a portion of the structure of fig. 38.

Fig. 41 shows a detail of the structure shown in fig. 39.

To obtain the component carrier 100 shown in fig. 42, a (e.g. copper) plating procedure may be carried out. The plated conductive material fills the openings 116, thereby forming conductive contacts 114. As a result of the described plating procedure, the upper and lower major surfaces of the component carrier 100 of fig. 42 are also covered with an electrically conductive material, such as copper.

Fig. 43 to 45 show sectional views of structures obtained during implementation of a method of manufacturing a component carrier 100 with an embedded component 102 according to an exemplary embodiment of the invention. In this embodiment, a copper pillar is used as the conductive contact 114. From the start of the described process, the component 102 with the dielectric layer 112 has been provided with copper pillars as conductive contacts 114 extending through the dielectric layer 112. In other words, at a point prior to embedding the component 102 into the stack 104, the copper pillar has formed a portion of the component 102.

Referring to fig. 43, the component 102 is depicted interposed between a temporary carrier 120 located at the bottom of the component 102 and the arrangement of the layer structures 106, 108 located above the component 102. The layer structures 106, 108 are composed of an uncured electrically insulating layer structure 106 (e.g. a prepreg layer) and an electrically conductive layer structure 108 (such as a copper foil).

The structure in fig. 44 may be obtained by laminating to connect constituent parts shown in fig. 43 and then removing the temporary carrier 120.

Fig. 45 shows the results of a plating procedure or another lamination procedure applied to the structure of fig. 44. As a result, both opposite major surfaces of the structure shown in fig. 44 are covered with a conductive material such as copper. The structure 100 according to fig. 45 may be further processed, e.g. patterned.

Fig. 46 and 47 show plan views of structures obtained during implementation of a method of manufacturing a component carrier 100 with an embedded component 102 according to an exemplary embodiment of the invention.

Fig. 46 shows a plan view of a component 102 having a dielectric layer 112 and an opening 116 for a contact pad 110 (not shown in fig. 46). In the illustrated embodiment, the dielectric layer 112 is provided as a doped material having an electrically insulating matrix and an additive including a metal compound in the matrix. Such a component 102 may be used in coreless manufacturing processes as well as manufacturing processes that use cores.

Following the procedure of embedding the component 102 shown in fig. 46 in the stack 104, and referring now to fig. 47, a surface portion or track of the dielectric layer 112 may optionally be processed by a laser beam (not shown) to locally remove material of the electrically insulating matrix while locally activating additives for facilitating subsequent metal deposition. By this activation, it is then possible to selectively deposit a metallic material (such as copper) only on the locally activated additive. As a result, conductive traces 182 may be formed for establishing the desired electrical contact tasks. In the illustrated embodiment, the conductive trace 182 is also electrically coupled to the conductive contact 114 in the previous opening 116 for establishing electrical contact with the pad 110.

It is also shown in fig. 47 that the electrically insulating layer structure 106 of the stack 104 may also be provided as a doping material having an electrically insulating matrix and an additive comprising a metal compound in the matrix. By taking this measure, the conductive traces 182 may be formed partially on the dielectric layer 112 and partially on the electrically insulating layer structure 106.

In contrast to conventional methods of applying an electrically insulating layer structure on the bottom surface of a component by lamination after embedding, exemplary embodiments of the present invention employ a component having a dielectric layer already applied to the component at the time of embedding. This allows the manufacture of very thin laminated component carriers with embedded components. The manufacturing process is significantly simplified. Such a manufacturing architecture can be used for various component carriers with embedded components, in particular of the PCB type, where a very thin component carrier and a simple manufacturing procedure are desired.

It should be noted that the term "comprising" does not exclude other elements or steps and the "a" or "an" does not exclude a plurality. Also elements described in association with different embodiments may be combined.

It should also be noted that reference signs in the claims shall not be construed as limiting the scope of the claims.

The implementation of the invention is not limited to the preferred embodiments shown in the drawings and described above. On the contrary, many variations using the shown solution and the principle according to the present aspect are possible even in the case of fundamentally different embodiments.