阅读说明：本技术 一种高功率密度igbt模块的双面混合散热结构 (Double-sided hybrid heat dissipation structure of high-power-density IGBT module ) 是由 不公告发明人 于 2019-11-29 设计创作，主要内容包括：本发明公开了一种高功率密度IGBT模块的双面混合散热结构,包括上层热管、下层热管、上水冷板、下水冷板和功率模块；功率模块的上表面和下表面分别通过与上层热管和下层热管连接,上层热管和下层热管未与功率模块连接的部分通过焊料层相互连接,并且通过焊料层相互连接的部分上层热管的上表面与上水冷板连接,通过焊料层相互连接的部分下层热的下表面与下水冷板连接；功率模块包括IGBT芯片和FWD芯片,双面混合散热结构上下表面位于同一平面。本发明热管和水冷技术相结合的双面混合散热结构,采用上下覆铜基板结构将IGBT的发射极和FWD的阳极通过覆铜基板连接能够为电动汽车和混合动力汽车的动力模块提供一种比目前高功率密度IGBT模块。(The invention discloses a double-sided hybrid heat dissipation structure of a high-power-density IGBT module, which comprises an upper-layer heat pipe, a lower-layer heat pipe, an upper water cooling plate, a lower water cooling plate and a power module, wherein the upper-layer heat pipe is connected with the lower-layer heat pipe; the upper surface and the lower surface of the power module are respectively connected with the upper layer heat pipe and the lower layer heat pipe, the parts of the upper layer heat pipe and the lower layer heat pipe which are not connected with the power module are mutually connected through a solder layer, the upper surface of the part of the upper layer heat pipe which is mutually connected through the solder layer is connected with the upper water cooling plate, and the lower surface of the part of the lower layer heat pipe which is mutually connected through the solder layer is connected with the lower water cooling plate; the power module comprises an IGBT chip and an FWD chip, and the upper surface and the lower surface of the double-sided hybrid heat dissipation structure are located on the same plane. According to the double-sided hybrid heat dissipation structure combining the heat pipe and the water cooling technology, the emitter of the IGBT and the anode of the FWD are connected through the copper-clad substrates by adopting the upper copper-clad substrate structure and the lower copper-clad substrate structure, so that a high-power-density IGBT module compared with the conventional high-power-density IGBT module can be provided for power modules of electric automobiles and hybrid electric automobiles.)

1. A double-sided hybrid heat dissipation structure of a high power density IGBT module, comprising:

the device comprises an upper layer heat pipe (1), a lower layer heat pipe (9), an upper water cooling plate (18), a lower water cooling plate (19) and a power module (30); the upper surface and the lower surface of the power module (30) are respectively connected with the upper-layer heat pipe (1) and the lower-layer heat pipe (9), the parts of the upper-layer heat pipe (1) and the lower-layer heat pipe (9) which are not connected with the power module (30) are connected with each other through a solder layer, the upper surface of the part of the upper-layer heat pipe (1) which is connected with each other through the solder layer is connected with the upper water cooling plate (18), and the lower surface of the part of the lower-layer heat pipe (9) which is connected with each other through the solder layer is connected with the lower water cooling plate (19); the power module (30) comprises an IGBT chip (12) and an FWD chip (5), and the upper surface and the lower surface of the double-sided hybrid heat dissipation structure are located on the same plane.

2. The double-sided hybrid heat dissipation structure of the high-power-density IGBT module according to claim 1, characterized in that the power module is connected with the upper layer heat pipe (1) and the layer heat pipe (9) through a solder layer.

3. The double-sided hybrid heat dissipation structure of a high power density IGBT module according to claim 1, wherein the power module (30) further comprises: the copper-clad laminate comprises a first insulating substrate upper copper layer (3), a first insulating substrate (10), a first insulating substrate lower copper layer (4), a second solder layer (11), a fifth solder layer (6), a third copper-clad layer (7) and a second insulating substrate (8); a lower layer heat pipe (9), a first insulating substrate (10), a fourth solder layer (13), a fourth copper-clad layer (14) and a third solder layer (16);

the upper surface of the IGBT chip (12) is connected with the lower surface of the lower copper layer (4) of the first insulating substrate through a second solder layer (11), the upper surface of the FWD chip (5) is connected with the lower surface of the lower copper layer (4) of the first insulating substrate through a third solder layer (16), the upper surface of the lower copper layer (4) of the first insulating substrate is connected with the lower surface of the first insulating substrate (10), the upper surface of the first insulating substrate (10) is connected with the lower surface of the upper copper layer (3) of the first insulating substrate, and the upper surface of the upper copper layer (3) of the first insulating substrate is connected with the upper heat pipe (3) through a first solder layer (2);

the lower surface of the IGBT chip (12) is connected with the upper surface of the upper copper layer (7) of the second insulating substrate through a fourth solder layer (13), the lower surface of the FWD chip (5) is connected with the upper surface of the upper copper layer (7) of the second insulating substrate through a fifth solder layer (6), the lower surface of the upper copper layer (7) of the second insulating substrate is connected with the upper surface of the second insulating substrate (8), the lower surface of the second insulating substrate (8) is connected with the upper surface of the lower copper layer (14) of the second insulating substrate, and the lower surface of the lower copper layer (14) of the second insulating substrate is connected with the upper surface of the lower heat pipe (9) through a sixth solder layer (15).

4. The double-sided hybrid heat dissipation structure of the high power density IGBT module according to claim 3, characterized in that the sintered joints of the chip (11) and the FWD chip (12) bonded to the copper surface are formed by the second solder layer (11), the third solder layer (16), the fifth solder layer (6) and the fourth solder layer (13).

5. The double-sided hybrid heat dissipation structure of the high-power-density IGBT module according to claim 4, characterized in that the second solder layer (11), the third solder layer (16), the fifth solder layer (6) and the fourth solder layer (13) are sintered by Ag-based material or Cu-based material.

6. The double-sided hybrid heat dissipation structure of the high power density IGBT module according to claim 1, characterized in that the first insulating substrate (7) and the second insulating substrate (16) are deposited by DC reactive sputtering of AlN-Si 3N4 film.

7. The double-sided hybrid heat dissipation structure of the high-power-density IGBT module as recited in claim 1, wherein the upper water-cooling plate (18) is provided with upper cold water plate pin type water-cooling fin columns (17), and the upper cold water plate pin type water-cooling fin columns (17) are connected with upper cold water plate pin fin bases (27); the lower water cooling plate (19) is provided with lower cold water plate pin type water cooling fin columns (28), and the lower cold water plate pin type water cooling fin columns (28) are connected with lower cold water plate pin fin bases (29).

8. The double-sided hybrid heat dissipation structure of the high-power-density IGBT module according to claim 1, wherein an upper cold water plate water inlet (20) and an upper cold water plate water outlet (21) are respectively arranged at two sides of the upper water cooling plate (18); and a lower cold water plate water inlet (22) and a lower cold water plate water outlet (23) are respectively arranged at two sides of the lower water cold plate (19).

Technical Field

The invention relates to a double-sided hybrid heat dissipation structure of a high-power-density IGBT module, and belongs to the technical field of semiconductors and IGBT design.

Background

With the growth of infrastructure activities in developing countries, the demand for high voltage machines is expected to grow, thus driving the market demand for high power IGBTs. Applications of IGBTs in Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV) include their use in powertrains and chargers for delivering and controlling electric power to electric motors. The rapid growth in electric and hybrid vehicle applications is a major driver in the development of high-power IGBT technology. The main criteria for evaluating automotive power modules, such as performance, efficiency, reliability, cost and volume/weight, are generally determined by the power semiconductor device, packaging and manufacturing technology.

Therefore, it is a technical problem to be solved to provide a high power density IGBT module for power modules of electric vehicles and hybrid vehicles, which is more efficient than the advanced cooling technology provided on the present day.

Disclosure of Invention

The invention aims to provide a high-power-density IGBT module for power modules of electric automobiles and hybrid electric automobiles.

In order to achieve the technical purpose, the invention adopts the following technical scheme.

The invention provides a double-sided hybrid heat dissipation structure of a high-power-density IGBT module, which is characterized by comprising the following components:

the heat pipe cooling system comprises an upper layer heat pipe, a lower layer heat pipe, an upper water cooling plate, a lower water cooling plate and a power module; the upper surface and the lower surface of the power module are respectively connected with the upper layer heat pipe and the lower layer heat pipe, the parts of the upper layer heat pipe and the lower layer heat pipe, which are not connected with the power module, are mutually connected through a solder layer, the upper surface of the part of the upper layer heat pipe, which is mutually connected through the solder layer, is connected with the upper water cooling plate, and the lower surface of the part of the lower layer heat pipe, which is mutually connected through the solder layer, is connected with the lower water cooling plate; the power module comprises an IGBT chip and an FWD chip, and the upper surface and the lower surface of the double-sided hybrid heat dissipation structure are located on the same plane.

Further, the power module is connected with the upper layer heat pipe and the layer heat pipe through a solder layer.

Further, the power module further includes: the copper layer on the first insulating substrate, the copper layer under the first insulating substrate, the second solder layer, the fifth solder layer, the third copper-clad layer and the second insulating substrate; the lower-layer heat pipe, the first insulating substrate, the fourth solder layer, the fourth copper-clad layer and the third solder layer;

the upper surface of the IGBT chip is connected with the lower surface of the lower copper layer of the first insulating substrate through a second solder layer, the upper surface of the FWD chip is connected with the lower surface of the lower copper layer of the first insulating substrate through a third solder layer, the upper surface of the lower copper layer of the first insulating substrate is connected with the lower surface of the first insulating substrate, the upper surface of the first insulating substrate is connected with the lower surface of the upper copper layer of the first insulating substrate, and the upper surface of the upper copper layer of the first insulating substrate is connected with the upper heat pipe through a first solder layer;

the lower surface of the IGBT chip is connected with the upper surface of the upper copper layer of the second insulating substrate through a fourth solder layer, the lower surface of the FWD chip is connected with the upper surface of the upper copper layer of the second insulating substrate through a fifth solder layer, the lower surface of the upper copper layer of the second insulating substrate is connected with the upper surface of the second insulating substrate, the lower surface of the second insulating substrate is connected with the upper surface of the lower copper layer of the second insulating substrate, and the lower surface of the lower copper layer of the second insulating substrate is connected with the upper surface of the lower heat pipe through a sixth solder layer.

Further, a sintered joint portion where the chip and the FWD chip are bonded to the copper surface is formed by the second solder layer, the third solder layer, the fifth solder layer, and the fourth solder layer.

Further, the second solder layer, the third solder layer, the fifth solder layer and the fourth solder layer are sintered by using an Ag-based material or a Cu-based material.

Further, the first insulating substrate and the second insulating substrate are deposited with AlN-Si 3N4 film by reactive sputtering with direct current.

Furthermore, the upper water cooling plate is provided with upper cold water plate pin type water cooling fin columns which are connected with upper cold water plate pin fin bases; the lower water cooling plate is provided with lower cold water plate pin type water cooling fin columns which are all connected with the lower cold water plate pin fin base.

Furthermore, an upper cold water plate water inlet and an upper cold water plate water outlet are respectively arranged at two sides of the upper water cooling plate; and a lower cold water plate water inlet and a lower cold water plate water outlet are respectively arranged at two sides of the lower water cold plate.

The beneficial technical effects are as follows:

according to the double-sided hybrid heat dissipation structure combining the heat pipe and the water cooling technology, the emitter of the IGBT and the anode of the FWD are connected through the copper-clad substrates by adopting the upper copper-clad substrate structure and the lower copper-clad substrate structure, and bonding leads are reduced, so that the IGBT packaging structure with the double-sided heat pipe cooling is realized, and the reliability of the module is improved; the optimized solder layer and the forming mode between the chip and the copper-clad substrate are beneficial to exerting the high-temperature characteristic of the material, and simultaneously, the longitudinal heat conduction capability of heat from the chip to the substrate is improved, so that the highest temperature of the module is reduced, and the service life of the module is prolonged; the IGBT module with higher power density than that of the prior art can be provided for power modules of electric vehicles and hybrid electric vehicles.

Drawings

FIG. 1 is a schematic block diagram of an embodiment of the present invention;

FIG. 2 is a schematic cross-sectional view of a power module according to an embodiment of the invention;

FIG. 3 is a schematic view of a cross-sectional structure of the upper and lower cold water plates and the upper and lower heat pipes according to the embodiment of the present invention;

the labels in the figure are: 1, an upper layer heat pipe; 2: a first solder layer; 3: a copper layer on the first insulating substrate; 4: a first insulating substrate lower copper layer; 5: an FWD chip; 6: a fifth solder layer; 7: a copper layer on the second insulating substrate; 8: a second insulating substrate; 9: a lower layer heat pipe; 10: a first insulating substrate; 11: a second solder layer; 12: an IGBT chip; 13: a fourth solder layer; 14: a lower copper layer of a second insulating substrate; 15: a sixth solder layer; 16: a third solder layer; 17: mounting a cold water plate needle type water-cooling finned column; 18: a water cooling plate is arranged; 19: launching a water cooling plate; 20: an upper cold water plate water inlet; 21: a water outlet of the upper cold water plate; 22: a lower cold water plate water inlet; 23: a water outlet of the lower cold water plate; 24: a seventh solder layer; 25: an eighth solder layer; 26: and a ninth solder layer. 27: an upper cold water plate pin fin base; 28: a lower cold water plate needle type water-cooling finned column; 29: a lower cold water plate pin fin base; 30: and a power module.

Detailed Description

The invention is further illustrated by the following figures and examples. Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative only and should not be construed as limiting the invention.

The following disclosure provides many different embodiments, or examples, for implementing different features of the invention. To simplify the disclosure of the present invention, the components and arrangements of specific examples are described below. Of course, they are merely examples and are not intended to limit the present invention. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

In the description of the present invention, it should be noted that, unless otherwise specified and limited, the terms "mounted," "connected," "connecting," and "connecting" are used in a broad sense, and may be, for example, mechanically or electrically connected, or may be two elements communicating with each other, directly or indirectly through an intermediate, and the specific meaning of the terms may be understood by those skilled in the art according to specific situations.

These and other aspects of embodiments of the invention will be apparent with reference to the following description and attached drawings. In the description and drawings, particular embodiments of the invention have been disclosed in detail as being indicative of some of the ways in which the principles of the embodiments of the invention may be practiced, but it is understood that the scope of the embodiments of the invention is not limited correspondingly. On the contrary, the embodiments of the invention include all changes, modifications and equivalents coming within the spirit and terms of the claims appended hereto.

FIG. 1 is a schematic block diagram of an embodiment of the present invention; as shown in fig. 1, the present embodiment provides a double-sided hybrid heat dissipation structure of a high power density IGBT module, including: the heat pipe cooling system comprises an upper layer heat pipe (1), a lower layer heat pipe (9), an upper water cooling plate (18), a lower water cooling plate (19) (the lower water cooling plate (19) is not shown in the figure) and a power module (30); the upper surface and the lower surface of the power module (30) are respectively connected with the upper-layer heat pipe (1) and the lower-layer heat pipe (9), the parts of the upper-layer heat pipe (1) and the lower-layer heat pipe (9) which are not connected with the power module (30) are connected with each other through a solder layer, the upper surface of the part of the upper-layer heat pipe (1) which is connected with each other through the solder layer is connected with the upper water cooling plate (18), and the lower surface of the part of the lower-layer heat pipe (9) which is connected with each other through the solder layer is connected with the lower water cooling plate (19); the power module (30) comprises an IGBT chip (12) and an FWD chip (5), and the upper surface and the lower surface of the double-sided hybrid heat dissipation structure are located on the same plane.

On the basis of the above embodiment, the power module is connected with the upper layer heat pipe (1) and the layer heat pipe (9) through a solder layer.

On the basis of the above embodiments, fig. 2 is a schematic structural diagram of a power module according to an embodiment of the present invention; the power module (30) as shown in fig. 2 further comprises: the copper-clad laminate comprises a first insulating substrate upper copper layer (3), a first insulating substrate (10), a first insulating substrate lower copper layer (4), a second solder layer (11), a fifth solder layer (6), a third copper-clad layer (7) and a second insulating substrate (8); a lower layer heat pipe (9), a first insulating substrate (10), a fourth solder layer (13), a fourth copper-clad layer (14) and a third solder layer (16);

the upper surface of the IGBT chip (12) is connected with the lower surface of the lower copper layer (4) of the first insulating substrate through a second solder layer (11), the upper surface of the FWD chip (5) is connected with the lower surface of the lower copper layer (4) of the first insulating substrate through a third solder layer (16), the upper surface of the lower copper layer (4) of the first insulating substrate is connected with the lower surface of the first insulating substrate (10), the upper surface of the first insulating substrate (10) is connected with the lower surface of the upper copper layer (3) of the first insulating substrate, and the upper surface of the upper copper layer (3) of the first insulating substrate is connected with the upper heat pipe (3) through a first solder layer (2);

the lower surface of the IGBT chip (12) is connected with the upper surface of the upper copper layer (7) of the second insulating substrate through a fourth solder layer (13), the lower surface of the FWD chip (5) is connected with the upper surface of the upper copper layer (7) of the second insulating substrate through a fifth solder layer (6), the lower surface of the upper copper layer (7) of the second insulating substrate is connected with the upper surface of the second insulating substrate (8), the lower surface of the second insulating substrate (8) is connected with the upper surface of the lower copper layer (14) of the second insulating substrate, and the lower surface of the lower copper layer (14) of the second insulating substrate is connected with the upper surface of the lower heat pipe (9) through a sixth solder layer (15).

As a variation of the specific embodiment of the present invention, between two insulation bases between the upper heat pipe and the lower heat pipe, a plurality of power modules may be placed, the power modules being composed of an IGBT chip and an FWD chip. IGIGBT chips and FWD chips are staggered, which is beneficial to suppressing thermal coupling. A plurality of heat pipe radiating units can be arranged between the upper water-cooling plate and the lower water-cooling plate according to the heat dissipation thermal power of the chip, and each heat pipe radiating unit comprises an upper heat pipe, a lower heat pipe and a power module arranged between two insulating bases between the upper heat pipe and the lower heat pipe.

In order to significantly improve the thermal conductivity between the mold and the insulating substrate, AlN-DBC (directly bonded Cu), AlN-DBAg (directly bonded Ag) or Si3N4-DBC, Si3N4-DBAg can be adopted in specific implementation. Higher thermal conductivity insulators and DBC or DBAg enable the application of sintered joining techniques or soldering techniques without the need for solder joints.

According to the invention, the lower copper layer and the lower copper layer of the insulating substrate are connected to the surface of the heat pipe through the solder layer, so that thermal grease with high thermal resistance between the substrate and the radiating fin is removed. Therefore, the reliability of heat conduction and high-temperature operation is greatly improved.

Further, a sintered joint portion where the chip (11) and the FWD chip (12) are bonded to the copper surface is formed by the second solder layer (11), the third solder layer (16), the fifth solder layer (6), and the fourth solder layer (13).

On the basis of the above embodiment, it is preferable that the second solder layer (11), the third solder layer (16), the fifth solder layer (6), and the fourth solder layer (13) are sintered using an Ag-based material or a Cu-based material.

On the basis of the above embodiment, it is preferable that the first insulating substrate (7) and the second insulating substrate (16) deposit AlN-Si 3N4 films using direct current reactive sputtering. Sputtering of Al-Ni-Ag may also be used as a top electrode formation technique in other embodiments.

FIG. 3 is a schematic view of a connection structure of upper and lower cold water plates and upper and lower heat pipes according to an embodiment of the present invention; fig. 3 shows that the parts of the upper layer heat pipe (1) and the lower layer heat pipe (9) which are not connected with the power module (30) are connected with each other through an eighth solder layer (25), the upper surface of the part of the upper layer heat pipe (1) which is connected with each other is connected with the upper water cooling plate (18) through a seventh solder layer (24), and the ninth solder layer (26) of the lower surface of the part of the lower layer heat pipe (9) which is connected with each other is connected with the lower water cooling plate (19); the condenser part (heat dissipation) adopts a small water cooling device, so that the cooling system is quickly changed from gas into liquid, and then the liquid enters the evaporation part (heat dissipation) through the lamp wick. Fig. 3 shows a detailed structure of the condenser portion. As shown in fig. 3, the upper water cooling plate (18) is provided with upper cold water plate pin type water cooling finned columns (17), and the upper cold water plate pin type water cooling finned columns (17) are all connected with upper cold water plate pin fin bases (27); the lower water cooling plate (19) is provided with lower cold water plate pin type water cooling fin columns (28), and the lower cold water plate pin type water cooling fin columns (28) are all connected with lower cold water plate pin fin bases (29). An upper cold water plate water inlet (20) and an upper cold water plate water outlet (21) are respectively arranged at two sides of the upper water cooling plate (18); two sides of the lower water cooling plate (19) are respectively provided with a lower water cooling plate water inlet (22) and a lower water cooling plate water outlet (23).

The special solder layer is used for replacing a common solder layer between the chip and the substrate, so that the high-temperature characteristic of the material is favorably exerted, and the longitudinal heat conduction capability of heat from the chip to the substrate is improved, so that the highest temperature of the module is reduced, and the service life of the module is prolonged; in order to obviously improve the heat conductivity between the die and the insulating substrate, a sintering connection technology or a brazing technology is adopted without welding joints, the connection between the substrate and the radiating fin unit is realized, and a high-efficiency high-power IGBT module is realized.

Finally, it should be noted that: the above embodiments are only intended to illustrate the technical solution of the present invention and not to limit the same, and a person of ordinary skill in the art can make modifications or equivalents to the specific embodiments of the present invention with reference to the above embodiments, and such modifications or equivalents without departing from the spirit and scope of the present invention are within the scope of the claims of the present invention as set forth in the claims.