Semiconductor device and method for manufacturing the same
阅读说明：本技术 半导体装置及其制造方法 (Semiconductor device and method for manufacturing the same ) 是由 清水晓人 新德恭久 井守义久 岸博明 细川淳 今田知彦 岛村伸也 于 2018-11-29 设计创作，主要内容包括：实施方式涉及半导体装置及其制造方法。实施方式的半导体装置具备半导体芯片、配置在上述半导体芯片的周围的多个连接端子、包括将上述半导体芯片与上述多个连接端子电连接的多个布线在内的基座部件、以及填充在配置于上述基座部件上的上述半导体芯片与上述多个连接端子之间的树脂部件。上述树脂部件具有第1面、第2面和侧面,上述第1面与上述半导体芯片的和上述基座部件接触的面相连,上述第2面位于上述第1面的相反侧,上述侧面与上述第1面及上述第2面相连。上述多个连接端子位于上述树脂部件中,包含在上述第1面或上述第2面露出的第1接触面、和与上述第1接触面相连且在上述侧面露出的第2接触面。(Embodiments relate to a semiconductor device and a method of manufacturing the same. The semiconductor device of the embodiment includes a semiconductor chip, a plurality of connection terminals arranged around the semiconductor chip, a base member including a plurality of wires electrically connecting the semiconductor chip and the plurality of connection terminals, and a resin member filled between the semiconductor chip arranged on the base member and the plurality of connection terminals. The resin member has a 1 st surface, a 2 nd surface, and side surfaces, the 1 st surface being continuous with a surface of the semiconductor chip which is in contact with the base member, the 2 nd surface being located on an opposite side of the 1 st surface, and the side surfaces being continuous with the 1 st surface and the 2 nd surface. The plurality of connection terminals are located on the resin member and include a 1 st contact surface exposed on the 1 st surface or the 2 nd surface and a 2 nd contact surface continuous with the 1 st contact surface and exposed on the side surface.)
1. A semiconductor device, wherein,
the disclosed device is provided with:
a semiconductor chip;
at least 1 connection terminal disposed around the semiconductor chip;
a base member including a wiring for electrically connecting the semiconductor chip and the connection terminal; and
a resin member filled between the semiconductor chip and the connection terminal arranged on the base member, and having a 1 st surface, a 2 nd surface located on the opposite side of the 1 st surface, and side surfaces connected to the 1 st surface and the 2 nd surface, the 1 st surface being connected to a surface of the semiconductor chip which is in contact with the base member,
the connection terminal is located in the resin member and includes a 1 st contact surface exposed on the 1 st surface or the 2 nd surface and a 2 nd contact surface continuous with the 1 st contact surface and exposed on the side surface.
2. The semiconductor device according to claim 1,
the connecting terminal comprises a core material positioned in the resin component and a 1 st metal layer which is arranged on the core material and is made of a material different from that of the core material,
the 1 st contact surface and the 2 nd contact surface are surfaces of the 1 st metal layer.
3. The semiconductor device according to claim 1,
the connection terminal has a notch portion located at a corner where the 1 st contact surface and the 2 nd contact surface intersect.
4. The semiconductor device according to claim 1,
the semiconductor chip has a surface exposed from the resin member and located on the opposite side of a surface in contact with the base member.
5. The semiconductor device according to claim 1,
the semiconductor chip has a 2 nd metal layer, the 2 nd metal layer being provided on a surface opposite to a surface in contact with the base member,
the 2 nd metal layer is exposed from the resin member.
6. The semiconductor device according to claim 1,
the base member further includes an insulating member covering the wiring, and a 3 rd metal layer covering a surface opposite to a surface in contact with the semiconductor chip,
the 3 rd metal layer is electrically insulated from the wiring by the insulating member.
7. The semiconductor device according to claim 1,
the resin member includes a portion located on the 2 nd surface side and covering the semiconductor chip.
8. The semiconductor device according to claim 1,
the connection terminal has a thickness larger than a thickness of the base member in a direction from the 1 st surface toward the 2 nd surface of the resin member.
9. The semiconductor device according to claim 1,
the connection terminal has a thickness substantially equal to a thickness of the semiconductor chip in a direction from the 1 st surface toward the 2 nd surface of the resin member.
10. The semiconductor device according to claim 2,
further comprises a mounting board including a connection pad electrically connected to the connection terminal,
the connection terminal is electrically connected to the connection pad via a connection member,
the 1 st metal layer contains a material having a higher wettability to the connecting member than the core material.
11. The semiconductor device according to claim 10,
the connection member has a rounded corner provided so as to contact the 1 st contact surface and the 2 nd contact surface and extending in a direction from the semiconductor chip toward the connection terminal.
12. The semiconductor device according to claim 1,
further comprises a semiconductor chip different from the semiconductor chip,
the different semiconductor chips are arranged in a direction from the semiconductor chip toward the connection terminal,
the at least 1 connection terminal is disposed around the semiconductor chip and the different semiconductor chip.
13. A method for manufacturing a semiconductor device, wherein,
a frame having a frame portion provided with a plurality of openings and a plurality of terminals projecting from the frame portion toward the inside of each of the plurality of openings is disposed on a 1 st base material,
a plurality of semiconductor chips are arranged on the 1 st base material so as to be positioned in the plurality of openings,
forming a resin member covering the frame and the plurality of semiconductor chips,
adhering a 2 nd base material to a 2 nd surface of the resin member opposite to the 1 st surface in contact with the 1 st base material, and then peeling the 1 st base material to expose the frame and the plurality of semiconductor chips on the 1 st surface,
a plurality of wirings for connecting the plurality of semiconductor chips and the plurality of terminal portions, respectively, are formed,
the plurality of terminal portions are left in the resin member and the frame portion is removed, thereby dividing the resin member into a plurality of packages.
14. The method for manufacturing a semiconductor device according to claim 13,
after half-cutting the frame so as to leave the plurality of terminals in the resin member by a blade thicker than the width of the frame portion in the direction along the surface of the 1 st base material, a metal layer is selectively formed on the surface of the frame exposed on the surface of the resin member.
15. The method for manufacturing a semiconductor device according to claim 13,
cutting the frame so as to leave the plurality of terminals in the resin member by a blade thicker than the width of the frame portion,
selectively forming a metal layer on exposed surfaces of the plurality of terminals left in the resin member,
the resin member is thinned from the 2 nd surface side to divide the resin member into the plurality of packages.
Technical Field
The invention relates to a semiconductor device and a method for manufacturing the same.
Background
Semiconductor devices used in IoT (Internet of Things), mobile devices, and the like are desired to be miniaturized to the size equivalent to a semiconductor chip. These semiconductor devices are mounted on a circuit board in the form of, for example, BGA (Ball grid array) or LGA (Land grid array), and it is difficult to inspect the connection state after mounting.
Disclosure of Invention
Drawings
Fig. 1A and 1B are schematic views showing a semiconductor device according to
Fig. 2A and 2B are schematic cross-sectional views showing a method of mounting a semiconductor device according to
Fig. 3A to 8B are schematic views showing a manufacturing process of the semiconductor device according to
Fig. 9A to 9C are schematic cross-sectional views showing a semiconductor device according to a modification of
Fig. 10A and 10B are schematic cross-sectional views showing a process of manufacturing a semiconductor device according to a modification of
Fig. 11A to 11C are schematic cross-sectional views showing a semiconductor device according to
Fig. 12A to 13C are schematic cross-sectional views showing a manufacturing process of a semiconductor device according to
Fig. 14A to 15B are schematic cross-sectional views showing another manufacturing process of the semiconductor device according to
Fig. 16 is a schematic cross-sectional view of a semiconductor device according to a modification of the embodiment.
Fig. 17 is a schematic cross-sectional view showing a method of mounting a semiconductor device according to a modification of the embodiment.
Embodiments provide a semiconductor device and a method for manufacturing the same, which facilitate inspection after mounting.
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