Rotary rectifier diode for motor rotor and manufacturing process thereof
阅读说明：本技术 一种电机转子用旋转整流二极管及其制作工艺 (Rotary rectifier diode for motor rotor and manufacturing process thereof ) 是由 王光磊 袁正刚 王宏 钟俊 于 2019-08-30 设计创作，主要内容包括：本发明提供的一种电机转子用旋转整流二极管及其制作工艺,其特征在于：包括钝化层,所述钝化层为环形,钝化层的内壁上制作有合金层,钝化层的外壁上制作有管芯,所述钝化层的高度与合金层的高度相同,所述管芯的高度大于钝化层的高度。本发明采用平面钝化芯片背面焊接镀金钼片的结构,摒弃了管芯以外的笨重封装外壳,大大降低了产品的体积、重量以及高速旋转时的转动惯量,有利于电机设备的小型化,紧凑化。(The invention provides a rotary rectifier diode for a motor rotor and a manufacturing process thereof, which are characterized in that: the passivation layer is annular, an alloy layer is manufactured on the inner wall of the passivation layer, a tube core is manufactured on the outer wall of the passivation layer, the height of the passivation layer is the same as that of the alloy layer, and the height of the tube core is larger than that of the passivation layer. The invention adopts a structure that the back of the plane passivation chip is welded with the gold-plated molybdenum sheet, and abandons a heavy packaging shell outside the tube core, thereby greatly reducing the volume and the weight of the product and the rotational inertia during high-speed rotation, and being beneficial to the miniaturization and the compactness of motor equipment.)
1. A kind of electrical machinery trochanter uses the rotating rectifier diode, characterized by that: the passivation layer structure comprises a passivation layer (3), wherein the passivation layer (3) is annular, an alloy layer (2) is manufactured on the inner wall of the passivation layer (3), a tube core (1) is manufactured on the outer wall of the passivation layer (3), the height of the passivation layer (3) is the same as that of the alloy layer (2), and the height of the tube core (1) is larger than that of the alloy layer (3).
2. A rotating rectifier diode for a rotor of an electric machine according to claim 1, wherein: the material 3 is polyimide.
3. A rotating rectifier diode for a rotor of an electric machine according to claim 1, wherein: the 2 is a gold-plated molybdenum sheet.
4. A manufacturing process of a rotary rectifier diode for a motor rotor comprises the following steps:
① growing an oxide layer on the surface of the silicon substrate;
②, photoetching and etching the upper and lower end faces of the oxide layer of the silicon substrate to form an active area window, and then forming a PN junction by solid source diffusion;
③, photoetching the inner side and the outer side of the oxide layer of the silicon substrate to remove the oxide layer, then placing the silicon substrate in an evaporation chamber, and forming an aluminum evaporation layer with the thickness of 1-3 mu m on the surface of the oxide layer removed;
④, etching the aluminum evaporation layer on the outer side of the silicon substrate by using metal etching liquid, wherein the etching temperature is 50-100 ℃, and the etching time is 60-240 s, then placing the silicon substrate in an evaporation chamber, firstly forming an aluminum layer with the thickness of 1-3 mu m on the etched surface, and then forming a titanium layer with the thickness of 0.5-2 mu m;
⑤ etching the aluminum evaporation layer on the inner side of the silicon substrate by using metal etching liquid, wherein the etching temperature is 50-100 ℃, and after etching for 120-360 s, photoetching a layer of polyimide with the thickness of 0.2-3 mu m on the inner side of the silicon substrate.
⑥, thinning the thickness of the silicon substrate to 200-350 μm, scribing regular shape by laser, die-filling and welding, the welding temperature is 300-500 ℃.
5. The process for manufacturing a rotating rectifying diode according to claim 4, wherein the step ① is chlorine doping, and the thickness of the oxide film is
6. The process for manufacturing a rotating rectifying diode for a rotor of an electric machine according to claim 4, wherein: the metal etching liquid is aluminum etching liquid.
7. The manufacturing process of the rotary rectifying diode for the motor rotor as claimed in claim 1, wherein in the step ②, boron source diffusion is adopted, the diffusion temperature is 1000-1200 ℃, the diffusion time is 3-6 h, the sheet resistance R is 10-60 Ω/□, and the diffusion junction depth is 5-10 μm.
Technical Field
The invention relates to a rotary rectifier diode for a motor rotor and a manufacturing process thereof.
Background
As shown in fig. 3, the conventional rotating rectifier diode for the motor rotor generally adopts a metal packaging shape such as DO-4, DO-5, and the like, and has the disadvantages of large volume, heavy weight, large moment of inertia, and the like, which is not favorable for the miniaturization and the compactness of the motor equipment.
Disclosure of Invention
In order to solve the technical problem, the invention provides a rotary rectifier diode for a motor rotor and a manufacturing process thereof.
The invention is realized by the following technical scheme.
The invention provides a rotary rectifier diode for a motor rotor, which is characterized in that: the passivation layer is annular, an alloy layer is manufactured on the inner wall of the passivation layer, a tube core is manufactured on the outer wall of the passivation layer, the height of the passivation layer is the same as that of the alloy layer, and the height of the tube core is larger than that of the passivation layer.
The passivation layer is made of polyimide.
The alloy layer is a gold-plated molybdenum sheet.
A manufacturing process of a rotary rectifier diode for a motor rotor comprises the following steps:
① growing an oxide layer on the surface of the silicon substrate;
②, photoetching and etching the upper and lower end faces of the oxide layer of the silicon substrate to form an active area window, and then forming a PN junction by solid source diffusion;
③, photoetching the inner side and the outer side of the oxide layer of the silicon substrate to remove the oxide layer, then placing the silicon substrate in an evaporation chamber, and forming an aluminum evaporation layer with the thickness of 1-3 mu m on the surface of the oxide layer removed;
④, etching the aluminum evaporation layer on the outer side of the silicon substrate by using metal etching liquid, wherein the etching temperature is 50-100 ℃, and the etching time is 60-240 s, then placing the silicon substrate in an evaporation chamber, firstly forming an aluminum layer with the thickness of 1-3 mu m on the etched surface, and then forming a titanium layer with the thickness of 0.5-2 mu m;
⑤ etching the aluminum evaporation layer on the inner side of the silicon substrate by using metal etching liquid, wherein the etching temperature is 50-100 ℃, and after etching for 120-360 s, photoetching a layer of polyimide with the thickness of 0.2-3 mu m on the inner side of the silicon substrate.
⑥, thinning the thickness of the silicon substrate to 200-350 μm, scribing regular shape by laser, die-filling and welding, the welding temperature is 300-500 ℃.
The step ① is chlorine doping oxidation with an oxide film thickness of
The metal etching liquid is aluminum etching liquid.
In the step ②, a boron source is adopted for diffusion, the diffusion temperature is 1000-1200 ℃, the diffusion time is 3-6 h, the square resistance R is 10-60 omega/□, and the diffusion junction depth is 5-10 mu m.
The invention has the beneficial effects that: the structure that the back of the planar passivation chip is welded with the gold-plated molybdenum sheet is adopted, a heavy packaging shell outside a tube core is abandoned, the size and the weight of a product and the rotational inertia during high-speed rotation are greatly reduced, and the miniaturization and the compactness of motor equipment are facilitated.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a front view of an electrode sheet of the present invention;
FIG. 3 is a block diagram of a tube formed diode of the present invention;
in the figure: 1-die, 2-alloy layer, 3-passivation layer.
Detailed Description
The technical solution of the present invention is further described below, but the scope of the claimed invention is not limited to the described.
A kind of electrical machinery trochanter uses the rotating rectifier diode, characterized by that: the passivation layer 3 is annular, an alloy layer 2 is manufactured on the inner wall of the passivation layer 3, a tube core 1 is manufactured on the outer wall of the passivation layer 3, the height of the passivation layer 3 is the same as that of the alloy layer 2, and the height of the tube core 1 is larger than that of the passivation layer 3.
The passivation layer 3 is made of polyimide.
The alloy layer 2 is a gold-plated molybdenum sheet.
A manufacturing process of a rotary rectifier diode for a motor rotor comprises the following steps:
① growing an oxide layer on the surface of the silicon substrate;
②, photoetching and etching the upper and lower end faces of the oxide layer of the silicon substrate to form an active area window, and then forming a PN junction by solid source diffusion;
③, photoetching the inner side and the outer side of the oxide layer of the silicon substrate to remove the oxide layer, then placing the silicon substrate in an evaporation chamber, and forming an aluminum evaporation layer with the thickness of 1-3 mu m on the surface of the oxide layer removed;
④, etching the aluminum evaporation layer on the outer side of the silicon substrate by using metal etching liquid, wherein the etching temperature is 50-100 ℃, and the etching time is 60-240 s, then placing the silicon substrate in an evaporation chamber, firstly forming an aluminum layer with the thickness of 1-3 mu m on the etched surface, and then forming a titanium layer with the thickness of 0.5-2 mu m;
⑤ etching the aluminum evaporation layer on the inner side of the silicon substrate by using metal etching liquid, wherein the etching temperature is 50-100 ℃, and after etching for 120-360 s, photoetching a layer of polyimide with the thickness of 0.2-3 mu m on the inner side of the silicon substrate.
⑥, thinning the thickness of the silicon substrate to 200-350 μm, scribing regular shape by laser, die-filling and welding, the welding temperature is 300-500 ℃.
The step ① is chlorine doping oxidation with an oxide film thickness of
The metal etching liquid is aluminum etching liquid.
In the step ②, a boron source is adopted for diffusion, the diffusion temperature is 1000-1200 ℃, the diffusion time is 3-6 h, the square resistance R is 10-60 omega/□, and the diffusion junction depth is 5-10 mu m.
The motor rotor is made of a rotary rectifying diode tube core by adopting a planar process structure, the surface of the tube core is of a multilayer metal structure, the surface of the tube core is a gold layer, the purpose of increasing the electrical conductivity is achieved, the passivation layer material on the edge is a polyimide layer, a gold-plated molybdenum sheet is used as a tube core back supporting material to improve the mechanical property of the tube core, and the tube core and the gold-plated molybdenum sheet are connected by adopting high-temperature fusion welding.
By adopting the technical scheme, a heavy packaging shell except the tube core is eliminated, the purposes of reducing the volume and the weight of the product and reducing the rotational inertia during high-speed rotation are achieved, and the motor equipment is beneficial to miniaturization and compactness.